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The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman Joel D. Throckmorton Thomas C. Wear

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Similar to manufacturing processors Multiplexed address lines Separate data inputs and outputs Three control signals Two primary effects DRAM

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Page 1: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

The Evolution of Dynamic Random Access Memory

(DRAM)

CS 350Computer Organization and Architecture

Spring 2002Section 1

Nicole ChungBrian C. Hoffman

Joel D. ThrockmortonThomas C. Wear

Page 2: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

DRAM

•Manufacturer: IBM Speed: 35-200ns

•Year Introduced: 1969 Frequency: 4.77-40MHz

• Burst Timing: 5-5-5-5 Pins: SOJ(20,24,26)

•Voltage: +5v,-5v,+12v

Page 3: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

• Similar to manufacturing processors• Multiplexed address lines• Separate data inputs and outputs• Three control signals• Two primary effects

DRAM

Page 4: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

FPM DRAM

•Manufacturer: many Speed: 50ns

•Year Introduced: 1987 Frequency: 16-66 MHz

• Burst Timing: 5-3-3-3 Pins: 72/168

•Voltage: 5.0v Bandwidth: 188.71MBs

Page 5: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

• Simple DRAM slightly slower than FPM• How it works• “Safe”• Used primarily for main system

memories• Not well-suited for high-performance

video applications

FPM DRAM

Page 6: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

EDODRAM

• Extended Data Output Random Access Memory• Introduced in 1994, Improvement over FPM• Up to 40% increase in access time, over FPM• EDO shortens the read cycle between the memory

and the CPU • EDO chips still hold data valid after the signal that

“strobes” the column address goes inactive. Meaning, the CPU can perform other operations while memory is being accessed.

Page 7: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

EDODRAM

• EDODRAM runs asynchronously w/ the CPU clock• SDRAM has taken the place of EDODRAM• There is no difference between SDRAM and EDO at

bus speeds at or below 83MHz.• EDO timing: 5-2-2-2 at 66 MHz

Page 8: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

BEDODRAM• Burst EDODRAM• Introduced in 1995• Read/write cycles were batched in bursts of four• “The memory bursts wrap around on a four byte

boundary which means that only the two least significant bits of the CAS (Column Address Strobe) are modified internally to produce each address of the burst sequence”

• BEDO memory speed ranged from 40-66 MHz which was faster than the FPM at 33MHz

Page 9: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

BEDODRAM

• At bus speeds at or below 100 MHz, BEDO would have been faster and more reliable than SDRAM

• BEDO never really took off• There was more support for the production and

development of SDRAM

Page 10: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

SDRAM differs from past DRAM in two ways

• The way it’s organized– Multiple banks on a single DIMM– Allows banks to recharge while others read/write

• The way it’s controlled– Synchronous (aligned with the clock)– Performs commands that are fed by the clock signals

Page 11: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

SDRAM Ratings• PC66, PC100, PC133

– SDRAM ratings which describe which bus speeds the RAM will support and work correctly with.

– Ratings can also be in form x-y-z: • CAS latency (X)• RAS-to-CAS delay (Y)• RAS precharge time (Z)

– There is tolerance• (83MHz,100MHz works in 66MHz bus)

Page 12: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

RDRAM (Rambus)

• Single chip• Low pin count• High capacity• High bandwidth

Page 13: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman
Page 14: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

Rambus Channel Diagram

Page 15: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

Double Data Rate SDRAMIntroduced in 2000

• - Doubles bandwidth by accessing data on both the “rising edge” and “falling edge” of the memory bus clock

• - 2.5V versus 3.3V of the PC133 SDRAM

• 184-pin DDR DIMMs versus168-pin SDRAM DIMMs

Page 16: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

DDR SDRAM Politics• ISSUE 1 – Support

– AGP standard (NVIDIA GeForce 3D)

– Intel exclusive deal with Rambus

– AMD and VIA support DDR SDRAM

Page 17: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

DDR SDRAM Manufacturers• Hitachi

• Hyundai

• IBM

• Infineon

• Micron

• Mitsubishi

• Toshiba

• NEC

Page 18: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

DDR SDRAM Politics

• Issue 2 – Name– Proposed:

• DDR SDRAM PC200/266– (100/233 MHz memory bus)

– Conflict:• Rambus RDRAM PC600/700/800

Page 19: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

DDR SDRAM Politics

• Issue 2 – Name (cont.)– DDR SDRAM Resolve…

use the peak data transfer rate…• PC1600 = PC200

Formula (64 bit * 2 * 100MHz = 1600 MB/sec)

• PC2100 = PC233Formula (64 bit * 2 * 133MHz = 2133 MB/sec

Page 20: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

Citations• Arnold, Eric (2002). “Computer Memory Ram Sdram Buffered Pc66

Pc100 Pc133 Mem Dram.” URL:http://home.cfl.rr.com/bjp/

• Cullen, Drew (2002). “Hynix Rations DDR Supply.” URL:http://www.theregister.co.uk/content/3/23876.html

• Howe, Denis (1996). “Dynamic Random Access Memory by FOLDOC.” URL:http://wombat.doc.ic.ac.uk/foldoc/foldoc.cgi?DRAM

• Howe, Denis (1996). “Page-Mode Dynamic Random Access Memory.” URL:

• http://burks.brighton.ac.uk/burks/foldoc/94/85.htm• Kanellos, Michael (2002). “Memory Market Optimistic about 20002.” URL:

http://zdnet.com.com/2100-1103-858175.html• Kozierok, Charles (2001). “PC-Guide Ref DRAM Technologies.” URL:

http://www.pcguide.com/ref/ram/tech_FPM.htm

Page 21: The Evolution of Dynamic Random Access Memory (DRAM) CS 350 Computer Organization and Architecture Spring 2002 Section 1 Nicole Chung Brian C. Hoffman

Citations• Kozierok, Charles (2001). “PC-Guide Ref DRAM Technologies.” URL:

http://www.pcguide.com/ref/ram/techDDRSDRAM-c.html• Micron Technology(2000) “Memory Upgrades.” URL:

http://www.crucial.com/DDR/index.asp• Pabst, Thomas (2002). Tom’s Hardware Guide, “RAM Guide.” URL:

http://www6.tomshardware.com/mainboard/98q4/981024/• Russell, Rick (2000). “The Memory Conundrum.” URL:• http://peripherals.about.com/library/weekly/aa021300a.htm?

terms=DDR+DRAM• Thing, Lowell (2001). “What is.” URL:

http://whatis.techtarget.com/definition/0,,sid9_gci213955,00.html