the effect of sio22 addition on the characteristics of...

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The Effect Of SiO The Effect Of SiO 2 Addition On The Characteristics Of Addition On The Characteristics Of CuFe 2 O 4 Ceramics For NTC Ceramics For NTC Thermistor Thermistor Wiendartun 1) & Dani Gustaman Syarif 2) 1) Departement Of Physics, UPI, Bandung. 2) Nuclear Technology Center for Materials and Radiometry – BATAN, Bandung. INTRODUCTION THERMISTOR THERMISTOR Thermally Thermally Sensitive Sensitive Resistor Resistor. NTC CHARACTERISTIC : NTC CHARACTERISTIC : PRODUCT EXAMPLES: PRODUCT EXAMPLES: Important Important electronic electronic component component. - Sectors Sectors: Biomedical, Biomedical, aerospace, aerospace, instrumentation, instrumentation, communications, communications, automotive automotive RESULT (XRD) RESULTS (Microstructure) RESULTS (Electrical Characteristics) 0.25 w/o SiO 2 0 50 100 150 200 250 300 350 15 25 35 45 55 65 75 2q (Derajat) Intensitas (Cps) 101 202 220 303 224 413 404 112 211 312 0.50 w/o SiO 2 2q (Derajat) Intensitas (a.u.) 0 w/o SiO 2 0.75 % SiO 2 0 50 100 150 200 250 15 25 35 45 55 65 75 2q (Derajat) Intensitas (Cps) 101 112/200 211 103 202 220 312 303 224 413 404 XRD profiles of CuFe 2 O 4 based-ceramics 0.25 w/o SiO 2 Microstructure of the CuFe 2 O 4 based-ceramics 0 w/o SiO 2 Grain boundary material Grain Pore 59m 0.75 w/o SiO 2 Grain boundary material Pore 59m Grain - Sectors Sectors: Biomedical, Biomedical, aerospace, aerospace, instrumentation, instrumentation, communications, communications, automotive automotive and and HVACR HVACR (Heating, (Heating, Ventilation, Ventilation, Air Air conditioning conditioning and and Refrigeration) Refrigeration). - Application Application : Temperature Temperature measurement, measurement, circuit circuit compensation, compensation, suppression suppression of of in in rush rush-current, current, flow flow rate rate sensor sensor and and pressure pressure sensor sensor. Most, Most, thermistors thermistors are are produced produced from from spinel spinel ceramics ceramics based based on on transition transition metal metal oxides oxides forming forming general general formula formula AB AB 2 O 4 . Need Need alternative alternative (Expecially (Expecially based based on on abundant abundant material material (mineral) (mineral) in in Indonesia) Indonesia) CuFe CuFe 2 O 4 is is proposed, proposed, including including that that added added with with SiO SiO 2 . Predicted Predicted that that the the SiO SiO 2 addition addition can can improve improve the the characteristics characteristics of of the the CuFe CuFe 2 O 4 ceramic ceramic for for NTC NTC thermistors thermistors EXPERIMENT RESULTS (Electrical Characteristics) CONCLUSIONS The The CuFe CuFe 2 O 4 ceramics ceramics can can be be applied applied as as NTC NTC Thermistor Thermistor. The The grain grain size size of of the the CuFe CuFe 2 O 4 ceramics ceramics tends tends to to decrease decrease by by addition addition of of SiO SiO 2 . The The addition addition of of SiO SiO 2 increases increases the the room room temperature temperature resistivity resistivity (RT) RT) and and the the thermistor thermistor constant constant (B) (B) of of the the CuFe CuFe 2 O 4 ceramics ceramics due due to to the the segregated segregated SiO SiO 2 . The The value value of of (RT) RT) and and (B) (B) of of the the CuFe CuFe 2 O 4 ceramics ceramics made made in in this this work work fits fits the the market market requirement requirement. REFERENSI BetaTHERM Sensors [on line]. Available: http://www.betatherm.com. Eun Sang Na, Un Gyu paik, Sung Churl Choi, “The effect of a sintered microstructure on the electrical properties of a Mn-Co-Ni-O thermistor”, Journal of Ceramic Processing Research, Vol.2, No. 1, pp 31-34, 2001. Wiendartun, Dani Gustaman Syarif. The Effect of TiO2 Addition on the Characteristics of Sciences (ICMNS) 2006, ITB, Bandung, October 2006. ACKNOWLEGMENT ACKNOWLEGMENT The The authors authors wish wish to to acknowledge acknowledge their their deep deep gratitude gratitude to to DIKTI, DIKTI, Department Department of of National National Education Education of of Indonesian Indonesian Government Government for for financial financial support support under under hibah hibah Pekerti Pekerti program program with with contract contract No No.014 014/SPP/PP/DP /SPP/PP/DP2M/II/ M/II/2006 2006a CuO Fe 3 O 4 SiO 2 MIXING CALCINATION CRUSHING 800 °C/2 h PRESSING CHARACTERIZATION XRD Electrical Microstructural 3, 9 ton/Cm 2 SINTERING 1100 ºC/2 h Sintering Furnace Optical Microscope XRD Ln resistivity () vs 1/T of SiO 2 added- CuFe 2 O 4 ceramics 2 3 4 5 6 7 8 9 10 0.0025 0.003 0.0035 1/T (1/ o K) ln Resistivity listrik, r (ln Ohm-cm) 0 w/o SiO2 0.25 w/o SiO2 0.50 w/o SiO2 0.75 w/o SiO2 No. No. Additive of TiO Additive of TiO 2 (w/o) (w/o) B ( K) K) α (%/ (%/ K) K) ρRT ρRT (Ohm (Ohm-Cm) Cm) 1. 1. 0.00 0.00 2548 2548 2.83 2.83 291 291 2. 2. 0.25 0.25 2358 2358 2.62 2.62 1079 1079 3. 3. 0.50 0.50 2884 2884 3.20 3.20 4788 4788 4. 4. 0.75 0.75 3308 3308 3.68 3.68 9400 9400 Market requirement for B 2000 oK and 2.2 %/oK Market requirement for RT = 10 ohm.cm -1 Mohm.cm

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Page 1: The Effect Of SiO22 Addition On The Characteristics Of ...file.upi.edu/Direktori/FPMIPA/JUR._PEND._FISIKA/195708071982112... · The Effect Of SiO22 Addition On The Characteristics

The Effect Of SiOThe Effect Of SiO22 Addition On The Characteristics Of Addition On The Characteristics Of CuFe2O4 Ceramics For NTC Ceramics For NTC ThermistorThermistor

Wiendartun1) & Dani Gustaman Syarif2)

1) Departement Of Physics, UPI, Bandung.2) Nuclear Technology Center for Materials and Radiometry – BATAN, Bandung.

INTRODUCTIONTHERMISTORTHERMISTOR ThermallyThermally SensitiveSensitive ResistorResistor..NTC CHARACTERISTIC : NTC CHARACTERISTIC :

PRODUCT EXAMPLES:PRODUCT EXAMPLES:

ImportantImportant electronicelectronic componentcomponent..-- SectorsSectors:: Biomedical,Biomedical, aerospace,aerospace, instrumentation,instrumentation, communications,communications, automotiveautomotive

RESULT (XRD)

RESULTS (Microstructure)

RESULTS (Electrical Characteristics)

0.25 w/o SiO2

0

50

100

150

200

250

300

350

15 25 35 45 55 65 75

2q (Derajat)

Inte

nsit

as (

Cp

s)

101 202 220

303

224 413404

112

211

312

0.50 w/o SiO2

2q (Derajat)

Inte

nsit

as (

a.u

.)

0 w/o SiO2

0.75 % SiO2

0

50

100

150

200

250

15 25 35 45 55 65 75

2q (Derajat)

Inte

ns

ita

s (

Cp

s)

101112/200

211

103

202220

312

303224

413 404

XRD profiles of CuFe2O4 based-ceramics

0.25 w/o SiO2

Microstructure of the CuFe2O4 based-ceramics

0 w/o SiO2

Grain boundary material

Grain

Pore

59m

0.75 w/o SiO2

Grain boundary material

Pore

59m

Grain

-- SectorsSectors:: Biomedical,Biomedical, aerospace,aerospace, instrumentation,instrumentation, communications,communications, automotiveautomotiveandand HVACRHVACR (Heating,(Heating, Ventilation,Ventilation, AirAir conditioningconditioning andand Refrigeration)Refrigeration)..-- ApplicationApplication :: TemperatureTemperature measurement,measurement, circuitcircuit compensation,compensation, suppressionsuppression ofof

inin rushrush--current,current, flowflow raterate sensorsensor andand pressurepressure sensorsensor..Most,Most, thermistorsthermistors areare producedproduced fromfrom spinelspinel ceramicsceramics basedbased onon transitiontransition metalmetaloxidesoxides formingforming generalgeneral formulaformula ABAB22OO44..NeedNeed alternativealternative (Expecially(Expecially basedbased onon abundantabundant materialmaterial (mineral)(mineral) inin Indonesia)Indonesia) CuFeCuFe22OO44 isis proposed,proposed, includingincluding thatthat addedadded withwith SiOSiO22..PredictedPredicted thatthat thethe SiOSiO22 additionaddition cancan improveimprove thethe characteristicscharacteristics ofof thethe CuFeCuFe22OO44

ceramicceramic forfor NTCNTC thermistorsthermistors

EXPERIMENT

RESULTS (Electrical Characteristics)

CONCLUSIONSTheThe CuFeCuFe22OO44 ceramicsceramics cancan bebe appliedapplied asas NTCNTC ThermistorThermistor..TheThe graingrain sizesize ofof thethe CuFeCuFe22OO44 ceramicsceramics tendstends toto decreasedecrease bybyadditionaddition ofof SiOSiO22..TheThe additionaddition ofof SiOSiO22 increasesincreases thethe roomroom temperaturetemperatureresistivityresistivity ((RT)RT) andand thethe thermistorthermistor constantconstant (B)(B) ofof thetheCuFeCuFe22OO44 ceramicsceramics duedue toto thethe segregatedsegregated SiOSiO22..TheThe valuevalue ofof ((RT)RT) andand (B)(B) ofof thethe CuFeCuFe22OO44 ceramicsceramics mademade ininthisthis workwork fitsfits thethe marketmarket requirementrequirement..

REFERENSIBetaTHERM Sensors [on line]. Available: http://www.betatherm.com.Eun Sang Na, Un Gyu paik, Sung Churl Choi, “The effect of a sintered microstructure on the electrical properties of a Mn-Co-Ni-O thermistor”, Journal of Ceramic Processing Research, Vol.2, No. 1, pp 31-34, 2001.Wiendartun, Dani Gustaman Syarif. The Effect of TiO2 Addition on the Characteristics of Sciences (ICMNS) 2006, ITB, Bandung, October 2006.

ACKNOWLEGMENTACKNOWLEGMENTTheThe authorsauthors wishwish toto acknowledgeacknowledge theirtheir deepdeep gratitudegratitude toto DIKTI,DIKTI, DepartmentDepartment ofofNationalNational EducationEducation ofof IndonesianIndonesian GovernmentGovernment forfor financialfinancial supportsupport underunderhibahhibah PekertiPekerti programprogram withwith contractcontract NoNo..014014/SPP/PP/DP/SPP/PP/DP22M/II/M/II/20062006aa

CuO Fe3O4 SiO2

MIXING

CALCINATION

CRUSHING

800 °C/2 h

PRESSINGCHARACTERIZATION XRD Electrical Microstructural

3, 9 ton/Cm2

SINTERING1100 ºC/2 h

Sintering Furnace Optical Microscope

XRD

Ln resistivity () vs 1/T of SiO2added- CuFe2O4 ceramics

2

3

4

5

6

7

8

9

10

0.0025 0.003 0.0035

1/T (1/oK)

ln R

esis

tivity

list

rik, r

(ln

Ohm

-cm

)

0 w/o SiO2

0.25 w/o SiO2

0.50 w/o SiO2

0.75 w/o SiO2

No.No. Additive of TiOAdditive of TiO22

(w/o)(w/o)BB

(( K)K)αα

(%/(%/ K)K)

ρRT ρRT (Ohm(Ohm--Cm)Cm)

1.1. 0.000.00 25482548 2.832.83 291291

2.2. 0.250.25 23582358 2.622.62 10791079

3.3. 0.500.50 28842884 3.203.20 47884788

4.4. 0.750.75 33083308 3.683.68 94009400

Market requirement for B ≥ 2000 oK and ≥ 2.2 %/oKMarket requirement for RT = 10 ohm.cm -1 Mohm.cm