the continuing revolution in automotive electronics -...

Automotive Electronics Workshop September 9, 2013 Grenoble

The Continuing Revolution in Automotive Electronics

From the Beginning to the Future Presented by Dr. W. R. Bottoms

Automotive Electronics Workshop September 9, 2013 Grenoble Automotive Electronics Workshop September 9, 2013 Grenoble

From The Beginning First automobile 1769 (Cugnot-France)

– Steam power no electronics

First electric automobile 1832 (Anderson- Scotland) – Electric motor, non-rechargeable battery

First internal combustion automobile 1860 (Lenoir-Belgium) – 2-stroke operated on coal gas, only ignition

First electric headlamps 1898 (Columbia Electric Car- Connecticut)

First electric starter 1911 (Kettering [Cadillac]- Michigan)

First automobile electrical system integrating ignition, lighting and electric start 1912-Cadillac-Delco

63 years

28 years

38 years

13 years

1 year


What Drives Automotive Electronics? Issues Independent Of Drive Train

Performance related electronics – Safety (Driver warnings/Bio feedback for sleep alarm, speed alarm, etc.)

– Handling – Navigation – Maintenance

Environmental controls – Temperature – Shading and both internal and external lighting (shades, photochromics, mirror dimming)

Infotainment – Audio – Video – Games – Communications including auto detect for speed limit and other driver information

Security – Communication (both internal and external) – Firewall/virus protection/ Anti-rollover

Haptics – Touch related driver feedback Systems integration Policy

– Safety systems (e.g., airbags, tire pressure sensors) – Driverless vehicles – Black box


What Drives Automotive Electronics? Internal combustion

Performance related electronics – Fuel economy – Emissions – Engine control (including remote startup for

example) Engine maintenance Sound control (Active noise cancelation Communication (both internal and external Policy

– Safety systems (e.g., airbags, tire pressure sensors) – Emissions


What Drives Automotive Electronics? Electric and Hybrid

Performance related electronics – Regenerative breaking – Power control – Battery charging control – Battery condition monitoring – Battery maintenance – For Hybrid add:

• Internal combustion drivers • Add dual drive system coordination


Hybrid Vehicle System Electronics

Hybrids

– Charging / Discharging – Performance – Plug-in – Torque vectoring

Power control Safety systems System monitoring


History of Automotive Wireless Communication

Source: Clemson University June 2011


Portable Consumer Products Are Market Drivers Even for Automotive Electronics

The dramatic rise of the mobile device market is expanding automotive electronics to include built-in interfaces for our portable devices. I-pods, tablets and smart phones will all be integrated to provide full portability for these appliances.


Components Of Today’s Complex Automotive Electronics

Braking (anti-lock brakes) Collision avoidance systems Communication systems Emissions controls Engine ignition (spark, timing) Entertainment systems Fuel injection Heating/air conditioning Lights, horn, wipers, defrosters … Maintenance

Navigation systems Noise cancellation Safety systems Seat & pedal positions Security systems Steering (steering assist, 4-

wheel steering) Suspension systems Transmission controls


Components Of Today’s Complex Automotive Electronics

Braking (anti-lock brakes) Collision avoidance systems Communication systems Emissions controls Engine ignition (spark, timing) Entertainment systems Fuel injection Heating/air conditioning Lights, horn, wipers, defrosters … Maintenance

Navigation systems Noise cancellation Safety systems Seat & pedal positions Security systems Steering (steering assist, 4-wheel

steering) Suspension systems Transmission controls

Current automobiles have more than 130 microprocessors The number of processors expected to double in 5 years. A typical automobile contains about 5 miles of wiring.


These Components Must Be Interconnected

CAN Introduced in 1986 (Controller Area Network)

Serial bus for distributed control system

Twisted-pair media use

Bandwidth up to 1 Mbps

Up to 40 devices.

http://www.talktomycar.co.uk/can.htm


MOST Introduced in 1998 (Media Oriented Systems Transport)

The MOST bus uses ring topology and synchronous communication for audio, video, voice and data signals. It supports both photonic and electronic data and is used by

almost every car manufacturer in the world.

These Components Must Be Interconnected


The Electronic Content Is Rising

% of Materials cost % of 150mm diameter waferCompact car 15 0.21Luxury Car 28 0.48Hybrid Car 47 0.96Personal Computer - 0.12


The Direction Of Automotive Electronics Is Clear

Electronics and Information Communications Technology are radically transforming the car as a product and an experience. The automobile industry no longer solely operates in the mechanical world. More and more, it is becoming part of the ICT and electronics worlds. High-tech players can seriously disrupt, either directly or indirectly, the automotive landscape as we know it today.

Source: Google, 2012

Almost every car company has acknowledged that future success lies in creating vehicles that are differentiated by electronics and software, rather than just by design and branding. The Automotive industry (like many other industries) is becoming more dependent on the electronics industry.


Ethernet Is Coming to the Automotive Data Network

"We will start seeing automotive Ethernet replacing CAN in eight to 10 years.“

Ali Abaye, Broadcom- August 2013 “When car cameras start handling higher-risk jobs

like lane departure warnings, reading traffic signals, or spotting pedestrians in the crosswalk, carmakers don't want visual information to be sent as compressed video. For such applications, OEMs are beginning to look to Gigabit Ethernet. In 2020, there will be cars equipped with Gigabit Ethernet.”

Peter Hank, NXP Semiconductors August 2013


The Network Will Not Be Just In The Vehicle

Resources in the vehicle will reduce need for infrastructure investment.

Cars will all connected to the network. As they are moving,

they will send real time information that’s collected by all the other cars. There will be no more traffic lights because everybody knows where everybody is.

The data collection from cars sending their position real time will be picked up and processed by a network that can then control position and speed to avoid any collisions.

This network may be the first and perhaps only infrastructure change we’ll see. The networking of vehicles using the existing highway infrastructure will also increase safety and capacity reducing total investment requirement.


What is Available Today Advanced safety technologies to help drivers avoid collisions by:

– improving their vision and awareness of road hazards – Brakes automatically if sensors predict the vehicle is at risk of a

collision. Adaptive Cruise Control and collision avoidance

– Uses radar, ultrasonic sensors and vision sensing detection a vehicle ahead and calculate its distance and relative speed

– Sends a message to the onboard computer to maintain a driver-selected following time/distance.

– Initiates automatic braking and throttle control to maintain selected following distance.

– The driver needs to remain attentive to traffic and road conditions and provide the steering, braking or other inputs necessary to retain control of the vehicle.


What is Available today? Automated parallel parking: All major manufacturers appear to have this

option available. USA Today tested several cars with the following

results: – Land Rover 21.9 seconds – Mercedes Benz 27.4 seconds – Nissan 30.5 seconds – Ford 31 seconds Best driver 16 seconds


The Google Car Has Likely Been To A Neighborhood Near You

It has a driver but the driver does not drive. It has been a legal and liability issue in California.

http://www.google.com/url?sa=i&source=images&cd=&cad=rja&docid=1na-fEKmRMpvZM&tbnid=iOgQXv8UpJLCMM:&ved=0CAUQjRw&url=http://www.zdnet.com/blog/gadgetreviews/google-wants-nevada-to-be-the-first-state-with-self-driving-cars/24581&ei=6xwiUtvCIcmwiQLZ6IGwBA&psig=AFQjCNFwNayTJVllvhLMDvUQJoJNYTF6ew&ust=1378053690429760

http://www.google.com/url?sa=i&source=images&cd=&cad=rja&docid=1na-fEKmRMpvZM&tbnid=iOgQXv8UpJLCMM:&ved=0CAUQjRw&url=http://www.masini.ro/stiri/noutati-auto/google-testeaza-in-traficul-real-o-masina-care-merge-singura/12579/&ei=IR0iUrPbN8vaigKq84CoAg&psig=AFQjCNFwNayTJVllvhLMDvUQJoJNYTF6ew&ust=1378053690429760


The Driverless Car Is Coming “Nissan announces plans to release Driverless Cars by 2020”

August 29, 2013

Nissan may be late to market. Recently, Google's self-driving car received a driver’s license from the state of Nevada


Hybrid and Electric Vehicle Components Have High Temperature Requirements Thermal management challenges force the use of

new semiconductor materials SiC and GaN based power devices will be used for

harsh environments and high operating temperatures

5 x 5 mm square SiC chip glowing red-hot operating at junction temperatures as high as 650 C.


Automotive Electronics Are Unique Requirements: Perform the functions to meet market demand In use reliability of 15 years or more Continuous reduction of cost per function Operation in harsh environments

Difficult Challenges: EMI protection is now a big issue and it will be even more

challenging in the future – Bluetooth and Zigbee are already embedded, broadband

RF is probably next. With higher speed radios and rising electrical energy, EMI will be an increasing challenge

Thermal Management for device, package, modules and sub-systems


Roadmap For Automotive Electronics

4.54.44.23.83.42.8kW/kgPower density1301201101008060Wh/kgEnergy densityBattery for

HEV(high power)

ECU

MotorCapacitor

Battery for BEV(High energy)

Power device

1.51.451.41.31.21kW/kgPower density

600500500500300200A/cm2Drain current density

19681

19664

16949

16936

169-

144-

mm sq.Die size SiSiC/GaN

3SiC/GaN

3SiC/GaN

4SiC/GaN

5SiC/GaN

25MOSFETIGBT

40 MOSFETIGBT

mΩ[email protected]

Specific on-resistance at breakdown voltage of 1.2kV

100110130140140130pcsNumber of ECUs

26224022020015050MbpsMedia, information

626262626260kWpower260247234220200170FCapacity of capacitor pack

250240230200150100Wh/kgEnergy density

3023161062W/cm3Inverter power density

150

10

182020

146

10

17.52018

138

10

172016

130

10

162012

125

10

15.52010

135pcsNumber of sensorsSensor

10MbpsPower train, body (CAN→Flex Ray)Network

16.5km/litterMedium car at JC08 modeMileage2014UnitCharacteristicsCategory

15X

13X

- 23%

2.5X


Packaging Requirements For Automotive Electronics

•module self-generating electricity•High speed package•mm-wave devices•Sensor/CPU/actuator integrated module

•Sensors and real-time processing•Monitoring a driver and lanes•Man-machine interface to inform the risk to the driver•Predictive safety mechanism

Safety

•Inverter-embedded motor•Integration

•Integration of MEMS sensor, actuator, interface chip, etc.

Body and security

•Higher data rate•Multiple communication path to outside sources

•Probe-car infrastructure•Traffic information infrastructure

Information/ entertainment

•Integration with network chip•Low impedance•EM immunity design•Higher-pin count packages•Smaller, cheaper EO devices

•X-by-wire; FlexRay (10Mbps)•Longer harness (50km now)•Reducing number of MCUs by networking•Plastic optical fiber

Network

•Lower Ron•Low Rth, cooling system•Management chip built-in cell

•High power, fast switching devices•Intelligent battery management:

Power train -Motor

•High-temperature durable packaging

•ECU-built in engine •Fuel-saving vehicle management

Power train- Combustion

Requirements to packagesTrendCategory


Techniques To Lower Resistance

~1.0mohm~0.5mohm~0.5mohm

Au wireAu wire

DieLead Frame

(Source,Gate)Au Wire

Die pad(Drain)

Lowering Ron → Reduction of Interconnection resistance Reduction of Interconnection resistance

Al ribbon

Cu clip

Thick Cu wire

Cu-Si-Cu stack


Thermal Management for Inverters

Forced air cooling Indirect liquid cooling

Both-sides Indirect liquid cooling Direct liquid cooling


Key Parameters For Automotive Electronics 2012 ITRS

Table AP28 Key Parameters for Automotive ElectronicsYear of Production 2013 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026

Regulation against CO2 emission (g/km)

EU (% to meet 120g/km) CO2 emission (g/km)

75% to 120g/km

80% to 120g/km

100% to 120g/km 120 120 120 120 95

California (g/km) 141 138 132 127 127 127 127 127Japan, JC08 mode (km/litter), equivalent CO2 emission (g/km)

16.3 16.5 16.8km/l130g/km 17 17.3 17.5 17.8 18

Battery performancefor HEV (Power oriented development)

Power density per weight (W/kg) 3600 3800 4000 4200 4300 4400 4450 4500 4550 4600 4650 4700 4750 4800

Energy density per weight (Wh/kg) 90 100 105 110 115 120 125 130 133 135 138 140 142 144

Battery performancefor BEV (Energy oriented development)

Power density per weight (W/kg) 1250 1300 1350 1400 1430 1450 1480 1500 1530 1550 1580 1600 1600 1620

Energy density per weight (Wh/kg) 180 200 220 230 235 240 245 250 255 260 265 270 270 270

Capacitor pack (F) 210 220 227 234 240 247 254 260 260 260 260 260 260 260

Power devices

Inverter power density (W/cm3) 8 10 13 16 20 23 25 30 35 40 45 50 55 60

Specific on-resistance at breakdown voltage of 1.2kV [mOhm*[email protected]] 20 5 5 4 4 3 3 2 2 2 2 2 2 2

Drain current density (A/cm2) 350 500 500 500 500 500 500 600 600 600 700 700 700 700

Max die size of Si-based power device (mm sq.)Max die size of SiC/GaN-based power device (mm sq.)

169-

16936

16936

16949

19649

19664

19664

19681

19681

196100

196100

225121

225121

225121

Motor power (kW) 62 62 62 62 62 62 62 62 62 62 62 62 62 62

Networks

Power train and body (Mbps) 10 10 10 10 10 10 10 10 10 10 10 10 10 10

Media and information (Mbps) 175 200 210 220 230 240 250 262 262 262 262 262 262 262

Number of devices

Sensors (pieces/car) 130 135 134 138 142 146 148 150 150 150 150 150 150 150

ECUs (pieces/car) 140 140 140 130 120 110 100 100 90 80 70 60 50 40

Power devices for automotive electronivccs

Max ambient temperature of power device 125 125 125 125 125 125 125 125 125 125 125 125 125 125

Device

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Max junction temperature (degree C) 200 200 220 230 240 250 260 270 270 280 280 280 290 290Rthja required for inverter power density (W/cm3) with regard to Ta of 125deg C (deg C/W/cm3)

9.4 7.5 7.3 6.6 5.8 5.4 5.4 4.8 4.1 3.9 3.4 3.1 3.0 3.0

Max mold temperature (deg C) 200 200 200 200 200 200 200 200 200 200 200 200 200 200

package termical resistance (m Ohm) 0.18 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.16

Logic devices

Temperature attached to engine (degree C) 135 140 145 150 155 155 160 160 165 165 170 170 175 175

Max junction temperature (degree C) 155 160 160 170 175 175 180 180 185 185 190 190 195 195

Bond pad structure OPM OPM OPM OPM OPM OPM OPM OPM OPM OPM OPM OPM OPM OPM

Wire bonding Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire

SiP structure QFP/SOP/BGA (Side by side+ 3D)

Manufacturable solutions exist, and are being optimized

Manufacturable solutions are known

Interim solutions are known Manufacturable solutions are NOT known

Notes for Table AP 281. Interconnection and cooling will be added for power devices in future revisions

Earliest issues for which we have no know solution are in 2017 and they are control of junction temperature

Only issues of concern through 2015 are Junction temperature control and mold temperature and we think we have known solutions


Key Parameters For Automotive Electronics 2013 ITRS

Table AP28 Key Parameters for Automotive ElectronicsYear of Production 2012 2013 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026

Regulation against CO2 emission (g/km)

EU (% to meet 120g/km) CO2 emission (g/km)

65% to 120g/km

75% to 120g/km

80% to 120g/km

100% to 120g/km 120 120 120 120 95

California (g/km) 145 141 138 132 127 127 127 127 127Japan, JC08 mode (km/litter), equivalent CO2 emission (g/km)

16 16.3 16.5 16.8km/l130g/km 17 17.3 17.5 17.8 18

Battery performancefor HEV (Power oriented development)

Power density per weight (W/kg) 3400 3600 3800 4000 4200 4300 4400 4450 4500 4550 4600 4650 4700 4750 4800

Energy density per weight (Wh/kg) 80 90 100 105 110 115 120 125 130 133 135 138 140 142 144

Battery performancefor BEV (Energy oriented development)

Power density per weight (W/kg) 1200 1250 1300 1350 1400 1430 1450 1480 1500 1530 1550 1580 1600 1600 1620

Energy density per weight (Wh/kg) 150 180 200 220 230 235 240 245 250 255 260 265 270 270 270

Capacitor pack (F) 200 210 220 227 234 240 247 254 260 260 260 260 260 260 260

Power devices

Inverter power density (W/cm3) 5 8 10 13 16 20 23 25 30 35 40 45 50 55 60

Specific on-resistance at breakdown voltage of 1.2kV [mOhm*[email protected]] 25 20 5 5 4 4 3 3 2 2 2 2 2 2 2

Drain current density (A/cm2) 300 350 500 500 500 500 500 500 600 600 600 700 700 700 700

Max die size of Si-based power device (mm sq.)Max die size of SiC/GaN-based power device (mm sq.)

169-

169-

16936

16936

16949

19649

19664

19664

19681

19681

196100

196100

225121

225121

225121

Motor power (kW) 62 62 62 62 62 62 62 62 62 62 62 62 62 62 62

Networks

Power train and body (Mbps) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10

Media and information (Mbps) 150 175 200 210 220 230 240 250 262 262 262 262 262 262 262

Number of devices

Sensors (pieces/car) 130 130 135 134 138 142 146 148 150 150 150 150 150 150 150

ECUs (pieces/car) 140 140 140 140 130 120 110 100 100 90 80 70 60 50 40

Power devices for automotive electronivccs

Max ambient temperature of power device 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125

Device Si-IGBTSi-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Max junction temperature (degree C) 170 200 200 220 230 240 250 260 270 270 280 280 280 290 290Rthja required for inverter power density (W/cm3) with regard to Ta of 125deg C (deg C/W/cm3)

9.0 9.4 7.5 7.3 6.6 5.8 5.4 5.4 4.8 4.1 3.9 3.4 3.1 3.0 3.0

Max mold temperature (deg C) 170 200 200 200 200 200 200 200 200 200 200 200 200 200 200

package termical resistance (m Ohm) 0.18 0.18 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.16

Logic devices

Temperature attached to engine (degree C) 125 135 140 145 150 155 155 160 160 165 165 170 170 175 175

Max junction temperature (degree C) 150 155 160 160 170 175 175 180 180 185 185 190 190 195 195

Bond pad structure OPM OPM OPM OPM OPM OPM OPM OPM OPM OPM OPM OPM OPM OPM OPM

Wire bonding Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire

SiP structure QFP/SOP/BGA (Side by side+ 3D)

Manufacturable solutions exist, and are being optimized

Manufacturable solutions are known

Interim solutions are known Manufacturable solutions are NOT known

Notes for Table AP 281. Interconnection and cooling will be added for power devices in future revisions


Changes in Key Parameters for 2013 ITRS

Year of Production 2012 2013 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026


Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Max junction temperature (degree C) 170 200 200 220 230 240 250 260 270 270 280 280 280 290 290Rthja required for inverter power density (W/cm3) with regard to Ta of 125deg C (deg C/W/cm3)

9.0 9.4 7.5 7.3 6.6 5.8 5.4 5.4 4.8 4.1 3.9 3.4 3.1 3.0 3.0

Max mold temperature (deg C) 170 200 200 200 200 200 200 200 200 200 200 200 200 200 200

package termical resistance (m Ohm) 0.18 0.18 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.16 0.16

Logic devices

Temperature attached to engine (degree C) 125 135 140 145 150 155 155 160 160 165 165 170 170 175 175

Max junction temperature (degree C) 150 155 160 160 170 175 175 180 180 185 185 190 190 195 195

Bond pad structure OPM OPM OPM OPM OPM OPM OPM OPM OPM OPM OPM OPM OPM OPM OPM

Wire bonding Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire

Year of Production 2012 2013 2014 2015


Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFET

GaN-MOSFET

Si-IGBTSi-MOSFET

SiC-MOSFETGaN-

MOSFET

Max junction temperature (degree C) 170 200 200 220Rthja required for inverter power density (W/cm3) with regard to Ta of 125deg C (deg C/W/cm3)

9.0 9.4 7.5 7.3

Max mold temperature (deg C) 170 200 200 200

package termical resistance (m Ohm) 0.18 0.18 0.16 0.16

Logic devices

Temperature attached to engine (degree C) 125 135 140 145

Max junction temperature (degree C) 150 155 160 160

Bond pad structure OPM OPM OPM OPM

Wire bonding Au/Cu wire Au/Cu wire Au/Cu wire Au/Cu wire

Accelerated SiC and GaN

Reduced max junction temperature For power devices

Reduced mold temperature For power devices

Reduced temperature attached to engine and Max junction temperature for logic devices

Accelerated adoption of Cu wire bonds


Thank You for your attention

the continuing revolution in automotive electronics -...

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