terahertz compact spice - mos-ak
TRANSCRIPT
TerahertzCompactSPICE
M.Shur1,A.Gu9n1,andT.Y=erdal2andG.Aizin3
1Physics,AppliedPhysics,andAstronomy
Electrical,Computer,andSystemsEngineeringRensselaerPolytechnicIns<tute,Troy,NewYork12180-3590
2UniversityofTrondheim,Norway3KingsboroughCollege
PresentedatMOS=AKWorkshopWashingtonDCJanuary9,2015
1
Outline
• Mo9va9on:Penetra9ngTHzrange• Background:ballis9ctransportandelectroniner9a
• TerahertzSPICE– Applica9ontoSiPlasmonicFETs– Applica9ontoInGaAsplasmonicFETs
• Temperaturedependenceoftheresponse• Conclusionsandfuturework
2
THzGap
Radar 1936
1 -10-2m Incandescent
1879 LED 1961
4-7.6 10-7m
VSSL 2004
Cell phone 1973
Radio 1886-1895 108-103 m
TV 1923
UV radiation 1901
1-4x10-7 m
UV fluorimeter
SET, Inc. UVtoptm
X-ray 1895
10-14-10-7 m
Wavelength (m)
THz Gap
APPLICATIONSofTHzTECHNOLOGYFaults in Space Shuttle Tiles Radio Astronomy
Vehicle radars and compact radars
Satellite communications
Testing VLSL
Wireless communications Medicine
Explosive detection
Homeland Security
NASA Implementation Plan for Space Shuttle Return to Flight and Beyond March 11, 2005, Volume 1, 9-th Edition
From: http://www.atl.lmco.com/business/ATL7.php
From http://www.scenta.co.uk/_db/_images/terahertz_radiation140.jpg
http://www.uml.edu/media/enews/print_1_108961_108961.html
Courtesy of Infrared Processing and Analysis Center, Caltech/JPL. IPAC is NASA's Infrared Astrophysics Data Center
http://www.atl.lmco.com/business/ATL7.php
http://www.ist-optimist.org/pdf/network/pres_ecoc2002/TERAVISION_ECOC2002.pdf
Y. Chen, et al, THz diffuse reflectance spectra of selected explosives and related compounds (2005)
THz Applications by frequency range
FromT.OtsujiandM.S.Shur,TerahertzPlasmonics.Goodresultsandgreatexpecta9ons,IEEEMicrowaveJournalOctober2014
3DTHzimagingsystem(Teraview)
From http://www.pharmaceutical-technology.com/contractor_images/teraview/1s-terraview.jpg
(a) Grated Gate THz Transistor
After A.V. Muravjov, D.B. Veksler, V.V. Popov, O. Polischuk, X. Hu, R. Gaska, N. Pala, H. Saxena, R.E. Peale, M.S. Shur, Temperature dependence of plasmonic terahertz absorption in grating-gate GaN HEMT structures, submitted to APL, 2009
MeanFreePathandBallis9cTransport
8
From M. Shur, "Ballistic transport and terahertz electronics," 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), pp.1-7, 15-17 Dec. 2010
M. S. Shur and L. F. Eastman, Ballistic Transport in Semiconductors at Low-Temperatures for Low Power High Speed Logic, IEEE Transactions Electron Devices, Vol. ED-26, No. 11, pp. 1677-1683, November (1979)
9
Oscilla9onsofElectronDensity(PlasmaWaves)
(a) High frequency, high mobility detector (b) Lower frequency, lower mobility detector where
Lo is the characteristic length of the decay of the plasma wave excited at source side
A. Gutin, V. Kachorovskii, A. Muraviev, and M. Shur, "Plasmonic terahertz detector response at high intensities," Journal of Applied Physics, vol. 112, pp. 014508-014508-5, 2012.
Gate
S D
L0
L
2D Gas
(a)
(b)
THz radiation excites plasma waves
Plasmonic nonlinearities cause signal rectification
Detecting THz radiation
0 100 200 300 400 5000
100
200
300
400
500
Id = 5mA, Vgs=-0.4 V
X (µm)
Y (µ
m)
Veksler, D.B. Muraviev, A.V. Elkhatib, T.A. Salama, K.N. Shur, M.S. , Plasma wave FET for sub-wavelength THz imaging, International Semiconductor Device Research Symposium December 12-14, 2007 College Park, Maryland, USA
PlasmonicDetectorsinSi,InGaAs,andGaN
ü Conversion efficiency vs frequency (Hz)
ü - Shorter gate – higher frequency
ü - Si plasma wave electronics: 0.5-5 THz - reachable at modern stage of technology.
From V. Yu. Kachorovskii, S. L. Roumyantsev, W. Knap, and M. Shur, Performance Limits for Field Effect Transistors as Terahertz Detectors, Appl. Phys. Lett. 102, 223505 (2013)
10
11
THz Detectors
Responsivity (V/W)
NEP (W/Hz1/2)
Response Time (sec)
Operating Temp (K)
Golay Cells1 105 10-10 10-2 300
Pyroelectric2 105 10-10 10-2 240-350
Schottky diodes3 103 10-10-10-11
10-9 10-420
Si FETs4 104 10-10-10-14 <10-9 10-450
InGaAs HEMT5 103 10-11 <10-9
10-450
GaN HEMT6
103
10-11
<10-9
10-800
1) QMC Instruments, http://www.terahertz.co.uk/ 2) Spectrum Detector, Inc. http://www.spectrumdetector.com/pdf/datasheets/THZ.pdf 3) Virginia Diodes, Inc. http://virginiadiodes.com/WR2.2ZBD.htm 4) E. Ojefors, U.R. Pfeiffer, A. Lisauskas, H.G. Roskos, "A 0.65 THz Focal-Plane Array in a Quarter-Micron CMOS Process Technology,"
IEEE Journal of Solid-State Circuits, vol. 44, no. 7, pp. 1968-1976, July 2009. 5) Shamsun Nahar, Alexey Gutin, Andrey Muraviev, Ingrid Wilke, Michael Shur, and Mona M. Hella, Terahertz Detection using on chip
Patch and Dipole Antenna-Coupled GaAs High Electron Mobility Transistors, International Microwave Symposium, Proceedings, Tampa Bay, Florida, June 2014, accepted
6) T. Tanigawa, T. Onishi, S. Takigawa, T. Otsuji, “Enhanced responsivity in a novel AlGaN/GaN plasmon-resonant terahertz detector using gate-dipole antenna with parasitic elements,” 2010 68th Annual Device Research Conference, pp. 167-8, June 2010.
Pyroelectric Golay cell Schottky diode HEMT
TerahertzDetectors
Sources: http://spectrum.ieee.org/semiconductors/optoelectronics/a-cheap-terahertz-camera S. Blin, L. Tohme, D. Coquillat, S. Horiguchi, Y. Minamikata, S. Hisatake, et al., "Wireless communication at 310 GHz using GaAs high-electron-mobility transistors for detection," Communications and Networks, Journal of, vol. 15, pp. 559-568, 2013. S. Boppel, A. Lisauskas, A. Max, V. Krozer, and H. G. Roskos, "CMOS detector arrays in a virtual 10-kilopixel camera for coherent terahertz real-time imaging," Optics letters, vol. 37, pp. 536-538, 2012.
Real-time CMOS THz camera
Wireless communication
Measured eye-diagram at data rate of HD uncompressed video
THz Applications of Plasmonic Detectors
Firstdemonstra9onofterahertzandsub-terahertzresponseinsiliconCMOS(Responseuptoover4THz)
NFETs PFETs
From W. Stillman, F. Guarin, V. Yu. Kachorovskii, N. Pala, S. Rumyantsev, M.S. Shur, and D. Veksler, Nanometer Scale Complementary Silicon MOSFETs as Detectors of Terahertz and Sub-terahertz Radiation, in Abstracts of IEEE sensors Conference, Atlanta, GA, October 2007, pp. 479-480
THz Response of CMOS (Nonresonant)
13
14
Shock waves the channel of InGaAs HEMT
L = 130 nm
S. Rudin, G. Rupper, A. Gutin, and M. Shur, Response of plasmonic terahertz detector to large signals: theory and experiment SPIE Defense Conference Proceedings, INVITED, Baltimore, MD, April (2013), Proc. SPIE 8716, Terahertz Physics, Devices, and Systems VII: Advanced Applications in Industry and Defense, 87160D (May 31, 2013); doi:10.1117/12.2015330
THz SPICE
After A. Gutin, S. Nahar, M. Hella, M. Shur, "Modeling Terahertz Plasmonic Si FETs With SPICE," IEEE Transactions on Terahertz Science and Technology, vol.3, no.5, pp.545-549, Sept. 2013.
Traditional SPICE
THzSPICEModel
15
TransmissionLineModel
16From G. R. Aizin and G, C. Dyer, Transmission line theory of collective plasma excitations in periodic two-dimensional electron systems: Finite plasmonic crystals and Tamm states, PHYSICAL REVIEW B 86, 235316 (2012)
R R R L L L
C C C
Gate
Source Drain
TransmissionLineRepresenta9onofTHzFET
S D Gate
2D gas
FET
TL equivalent circuit
𝑅= 𝑚↑∗ /𝑒↑2 𝑛↓0 𝜏𝑊 - Drude resistance per unit length 𝐿=𝜏𝑅 − Drude kinetic inductance per unit length 𝐶= 𝑊𝜀/𝑑 – gate capacitance per unit length
FromP.J.Burke,I.B.Spielman,J.P.Eisenstein,L.N.PfeifferandK.W.West,Highfrequencyconduc9vityofthehigh-mobilitytwo-dimensionalelectrongas,Appl.Phys.Le=.,February2000
ResonantPlasmaWaveResponseofTHzFET
Source Drain
~ 𝑈↓𝑠𝑔 𝑍↓𝑑𝑔 THz
S D Gate
|𝑍↓𝑠𝑔 |
𝜔/2𝜋 , THz
Source-gate complex impedance 𝒁↓𝒔𝒈 versus frequency 𝝎/𝟐𝝅 under open gate condition ( 𝒁↓𝒅𝒈 =∞)
Maxima of |𝑍↓𝑠𝑔 | correspond to the resonant excitation of the plasma waves at 1.02 THz, 3.05THz, 5.08THz, …
𝐿↓𝑔𝑎𝑡𝑒 =130 𝑛𝑚 𝑛↓0 =5.39×10↑11 𝑐𝑚↑−2 𝜏=1.08×10↑−11 𝑠 𝑑=4 𝑛𝑚
Measuring terahertz response
Ugs!
Ua!
δU gnd
V RL!!
Equivalent SPICE test bench
BWO
Sample
XYZ translation stage!
Parabolic Mirror
SR830
Ug
Chopper
Lock-in 2400S
LabView
After A. Gutin, S. Nahar, M. Hella, M. Shur, "Modeling Terahertz Plasmonic Si FETs With SPICE," IEEE Transactions on Terahertz Science and Technology, vol.3, no.5, pp.545-549, Sept. 2013.
ExperimentalSetupforModelValida9on
19
Analy&calmodelandsimulatedbyTHzSPICE Measuredandsimulatedresults
-0.15 -0.10 -0.05 0.00 0.05 0.10 0.15 0.20 0.250
2
4
6
8
10
12
14
16
18
20
22
24
26
S imula ted Meas ured
Response(mV)
UG T(V)
160mW
80.5mW39.4mW19.7mW
100
200
300
400
500
600
-0.20 0.00 0.20 0.40 0.60
Res
pons
e (µ
V)
UGT (V)
THz SPICE
Analytical
ModelValida9onforGaAsHEMT
After A. Gutin, T. Ytterdal, V. Kachorovskii, A. Muraviev, M. Shur, “THz SPICE for Modeling Detectors and Non-quadratic Response at Large Input Signal,” IEEE Sensors Journal, vol.13, no.1, pp.55,62, Jan. 2013.
20
gt
THz response at different technology nodes simulated at 200 GHz
After A. Gutin, S. Nahar, M. Hella, M. Shur, "Modeling Terahertz Plasmonic Si FETs With SPICE," IEEE Transactions on Terahertz Science and Technology, vol.3, no.5, pp.545-549, Sept. 2013.
SimulatedSiNMOSResponseforDifferentGateLengthsat200GHz
21
0.5 1.0 1.5 2.0 2.5 3.00.00
0.05
0.10
0.15
0.20
0.25
Res
pone
(a.u
.)
Frequency (THz)
130 nm 65 nm 32 nm 22 nm 14 nm
MaximumTHzresponseasafunc&onoffrequencyatdifferenttechnologynodes
After A. Gutin, S. Nahar, M. Hella, M. Shur, "Modeling Terahertz Plasmonic Si FETs With SPICE," IEEE Transactions on Terahertz Science and Technology, vol.3, no.5, pp.545-549, Sept. 2013.
FrequencyDependenceforSiTechnologyNodes
22
Spa9aldependenceofplasmawaveoscilla9ons:effectofparasi9cs
23
Gate voltage 0 V Effective mass of 0.19, and subthreshold ideality factor of 1.45, and extracted mobility of 220 cm2/Vs
Detectorresponseasafunc9onoffrequency:effectofparasi9cs
24
A. Gutin, T. Ytterdal, A. Muraviev, and M. Shur. "Modelling effect of parasitics in plasmonic FETs." Solid-State Electronics 104 (2015): 75-78.
Schema9cspa9aldependenceofplasmawaveoscilla9ons
25
Gate and drain contacts are connected by additional capacitance.
A. Gutin, T. Ytterdal, A. Muraviev, and M. Shur. "Modelling effect of parasitics in plasmonic FETs." Solid-State Electronics 104 (2015): 75-78.
-0.6 -0.4 -0.2 0.0 0.2 0.41E-12
1E-11
1E-10
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
Dra
in c
urre
nt (A
)
Gate voltage
10K 20K 40K 77K 120K 200K 300K
Responsivityinthesubthresholdregionisroughlypropor9onaltotheslope
SubthresholdTemperatureDependenceinGaAsHEMTs
26
-0.5 -0.4 -0.3 -0.2 -0.1 0.0 0.10
20
40
60
80
100
120
140
160
180
200
10K 20K 120K 40K 70K 250K 300K
Res
pons
e (u
V)
Gate voltage
10 100
10
100
Max
imum
Res
pons
e (u
V)
Temperature (K)
CoolingplasmonicdetectorscanimproveresponsivityandNEPbyseveralordersofmagnitudeandallowpassivedetec9on
TemperatureDependenceofGaAsHEMTResponse
27
ConclusionsandFutureWork
• Transport is ballistic in submicron transistors, and the physics is very different: silicon CMOS penetrated THz range
• Ultra short channel transistors support plasma waves in THz range with the channel acting as a resonance cavity
• THz compact SPICE model accurately reproduces THz response due to decaying plasma waves
• Future work: account for resonant plasma wave response in high mobility systems using varying transmission line model
28