technical trends in cemented carbides
TRANSCRIPT
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ITIA September 2012
Technical trends in cemented carbides
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Cemented carbides
• One of the most successful powder metallurgy products
• Balance between hardness and toughness: wide range of application
• Cutting tools, wear parts, rock tools, …
• Properties can be tailored within the material (e.g. gradients)
• Combination with coatings
• High performance required
• High added value material
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Cemented carbides: selected technical trendsDesign of microstructure at different scales: from nano to micro
Design of boundaries and interfaces by using adequate inhibitors, doping, …
Adjust morphology of binder phase structure, e.g. fcc/hcp ratios
Control of WC grains shape, size and distribution
Formation of gradients considering element distributions
Use of novel powders in morphology and composition
Use of recycled materials
Consideration of alternative binders to cobalt
Design of interfaces to coatings
Design assisted by modeling at different scales, from ab-initio to FEM
Use of high resolution characterization techniques
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Development of modern cemented carbides
=> Tailor properties at macro-, micro- and nano-scale for outstanding performance in defined applications, i.e. cutting tools, wear parts, rock tools, …
Multiscale modeling
high resolution characterization
Design at micro- & nano-scales
Properties &Applications
Raw materials & processing
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Microstructure design at different scales
• Design at micro- and nano-scales
grain boundaries and interfaces
binder phase structure
shape and distribution of WC grains
gradients
powders morphology and composition
interfaces to coatings
geometries
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Design assisted by modeling
• Use of multiscale modeling for design of microstructure
Models of mechanical properties / Neural networks
Finite element methods
Phase field simulations
Kinetic modeling of microstructure evolution
Thermodynamic predictions
Molecular dynamics
Ab-initio calculations 1 nm
1 μm
1 mm
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Modern characterization
• Use of high resolution characterization methods
HR-Transmission electron microscopy
Atom probe tomography
Synchrotron radiation
Neutron radiation
EBSD 3D tomography
Electron probe microanalysis
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Selected examples• Grain growth inhibitors at grain boundaries
HR-TEM, ab initio modeling, thermodynamic modeling
• Interfaces on WC-Co-Me systems
Atom probe tomography
• Formation of gradients
Thermodynamic and kinetic modeling
• Alternative binders
Thermodynamic and kinetic modeling
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Fine grained cemented carbides: effect of Cr addition to Co-WC
liquid+WC
fcc+WC WC+graphite
Mass-percent Carbon
Tem
pera
ture
Cel
sius
WC-Co
WC-Co-Cr
WC+M6C
Addition of 1.6at% Cr changes the equilibrium temperatures of the phase diagram and also affect the carbon content range
Phase diagram courtesy Susanne Norgren
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Fine grained cemented carbides: effect of Cr addition to Co-WC
WC-Co WC-Co-Cr
Strong grain growth inhibitor effectNo precipitation of Cr-carbides if content Cr below solubility limit J. Weidow, S. Norgren, H.O. Andren RMHM 27 (2009) 817
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Grain growth inhibition: Cr segregation?
0
50
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0 2 4 6 8 10 12keV
CoInterface WC-Co
Co
W
Co
W
W
Cr
5,1 5,3 5,5 5,7keV
CoInterface WC-Co
Bulkbinder
Interface
Cr in Co 4.7% 6%
Probe size = 10 nm
WC-Co,Cr,C
Co15.4 W41.2 C41.8 Cr1.6 (at%)
Courtesy A. Delanöe
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Cr segregation to WC-Co interfaces
Courtesy Lay, DelanöeHigh Resolution TEM image
Co15.4 W41.2 C41.8 Cr1.6 (at%)
Cr segregates to grain boundaries of WC grains
CrC layer of few atoms form at the interface WC/Co
Grain growth inhibition, change of interfacial energies
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Effect of V addition to Co-WC Mechanism of the grain growth control ?
unstable
stable
Neq Nlimit
ΔγM
C
γfilm
∂γfilm
∂N = ΔgMC + eMC
Segregation of V to WC/Co interfaces
Thin cubic carbide layer at the WC/Co interface observed by HR-TEM
V profile
Yamamoto et al. Sci. Techn. Adv. Mater. 1 (2000) 97
S. Lay et al. Adv. Eng. Mater. 6 (2004) 811
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Effect of V addition to Co-WC Mechanism of the grain growth control ?•Can these thin films exist at high temperature liquid phase sintering conditions where a large part of the grain growth occurs?
•At these temperatures and relevant doping conditions VCx is thermodynamically unstable.
Use of ab initio modeling
• Quantum mechanical calculations without experimental data as input parameters
• Limited by short length (nm) and time (ns) scale
• Can be used for:• Thermodynamics e.g. reaction enthalpies
• Interfaces e.g. stable configurations
• Interpreting experiments e.g. calculation of spectra
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Ab initio modeling : metal carbides in WC/Co interfaces• Ab initio calculations can be used to calculate which metal carbide thin films are stable in the
interface between WC and Co
• The metal carbides act as grain growth inhibitors, but also affect the mechanical properties of the cemented carbide
S. Lay et al. J Mater Sci 47 (2012) 1588
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Example: metal carbides in WC/Co interfaces
• Ab initio modeling shows that V containing layers are stable at the interface between Co and WC at liquid
• Films of atoms layers can be designed according to their stability at the interface WC-Co
• Understanding on control of grain size of WC
• Impact on toughness and plastic deformation
S. A. E. Johansson and G. Wahnström Phys Rev B 86, 035403 (2012)
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Interfaces in WC-Me-Co systems
Principle of atom probe tomography
Source: Oxford Materials
• Atomic resolution
• Reconstruction atom by atom
• Ideal method to study interfaces at nano scales
Interfaces between carbides and carbide-metal systems affect the properties of cemented carbides; need of high resolution technique to investigate interfaces
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WC/ and WC/WC interface in WC-TaC-Co2.3M atoms, z = 107 nm, d = 38 nm
WC
(Ta,W)C
SPECIMEN APT resultCourtesy J. Weidow
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WC/binder interface in WC-TaC-Co16.2M atoms, z = 178 nm, d = 122 nm
WC Co
Ta segregation
Co based binder
WC
Ta segregation at WC-binder interface
J. Weidow, H.-O. Andrén RMHM 29 (2011) 38
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/ interface in WC-TaC-Co
Layer consists ofCo 9446Cr 266Fe 34P 72Total 9818
2.7M atoms, z = 70 nm, d = 50 nm
Corresponds to 0.7 atom layer segregant atoms
(Ta,W)C
Co segregation at - interface
J. Weidow, H.-O. Andrén RMHM 29 (2011) 38
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WC/WC interface in WC-TaC-Co
Layer consists ofCo 2409Cr 63Fe 9Total 2481
Corresponds to 1.1 atom layer segregated atoms
5.9M atoms, z = 69 nm, d = 89 nm
Co
Ta
WC
No Ta segregation at WC-WC interfaceJ. Weidow, H.-O. Andrén RMHM 29 (2011) 38
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Summary of atom probe results at interfaces
Segregation of elements depends on element and type of interface
• Ti, V, Cr, Mn and Ta segregate to WC/binder phase boundaries.
• Segregation of V corresponds to approximately one monolayer of close packed VC.
• Segregation of Ti, Cr, Mn, Zr, Nb and Ta corresponds to a thin film with a thickness smaller than one monolayer assuming a MC structure.
• Co, Ti, Nb, Zr, Cr, Fe, segregate to WC/WC grain boundaries.
• Ta and Ni not observed to segregate to WC/WC grain boundaries
• Co, Fe segregate to /WC phase boundaries, where =fcc-MC and M = Ti, Zr, Nb, Ta.
• Co and Fe, segregate to (Ta,W)C/(Ta,W)C grain boundaries.
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Kinetic simulations of gradient formationDICTRA software coupled to ThermoCalc
nkj
nkjeff DfD )(
zc
DJ jn
j
nkjk
1
1
RTQ
RTMM kk
k exp0
Mko: frequency factor
Qk: activation energy factor
Labyrinth factor
law relating flux and concentration gradient given by the multi-component extension of Fick’s first law
aN atm = 0
JTi
JN
moving interface
FCC-freelayer
bulk
vacuumatmosphere
aN bulk > 0
aN atm = 0
JTi
JN
moving interface
FCC-freelayer
bulk
vacuumatmosphere
aN bulk > 0
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Kinetic simulations of gradient formation
Dictra simulation of fcc-free layer formation at 1450ºC and 2 h vacuum sintering: same mobility for all elements Modeling: 35 µm, Experimental: 20 µm
=> gradient kinetics too fast
Previous investigations [Ekroth et al. Acta Mat. 48 (2000) 2177] assumed the same mobility for all elements (W, Ti, Ta, Nb, N, C)
0.385.592.212.342.708.0balance
NCNbTaTiCoW
0.385.592.212.342.708.0balance
NCNbTaTiCoW
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Kinetic simulations of gradient formation
Metallic element mobilities=> 2 times slower than that of C and N
Best fit with experimental results (thickness of -free layers and phase distributions)
okk MRTQM lnMobilities of the different elements in the cobalt binder phase at the sintering temperature must be optimized
J.Garcia, et al. RMHM 29 (2011) 256
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Kinetic simulations of gradient formation
Modeling of kinetics of -free graded layer formation at different sintering conditions
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Raw materials: alternative binders
• Co => wettability to WC
=> low stacking fault energy (~20 mJ/m2) => formation SF (partial Shockley dislocations)
=> strengthening effect
• Ni => higher stacking fault energy (~125 mJ/m2) => formation of twins
=> reduced strength compared to cobalt
• Fe-Ni-Co => compositions with low SFE (”similar” properties to Co) => Invar alloys (Fe-36Ni)
=> / transformation, commercial alloys, e.g.70Fe-20Ni-10Co
=> C-control / C-solubility, => Austenite, Martensite, Bainite, …
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Raw materials: alternative binders• Binder is the “transport media” for the diffusion process in the formation of -free gradients
• How is the -free gradient formation influenced if we change the binder composition?
J.Garcia, RMHM 29 (2011) 306
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Raw materials: alternative binders• Thermodynamic predictions of N solubility on Fe-Ni-Co liquid binders (1450°C)
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10-5
MA
SS_F
RA
CTI
ON
N
0 20 40 60 80 100MASS_PERCENT CO
0
1
2
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10-4
MA
SS_F
RA
CTI
ON
N
0 20 40 60 80 100MASS_PERCENT FE
0
1
2
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10-4M
ASS
_FR
AC
TIO
N N
0 20 40 60 80 100MASS_PERCENT FE
A) B) C)
liquid liquid liquid
Liquid + N(g) Liquid + N(g) Liquid + N(g)
0
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10-5
MA
SS_F
RA
CTI
ON
N
0 20 40 60 80 100MASS_PERCENT CO
0
1
2
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4
5
6
10-4
MA
SS_F
RA
CTI
ON
N
0 20 40 60 80 100MASS_PERCENT FE
0
1
2
3
4
5
6
10-4M
ASS
_FR
AC
TIO
N N
0 20 40 60 80 100MASS_PERCENT FE
A) B) C)
0
1
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10-5
MA
SS_F
RA
CTI
ON
N
0 20 40 60 80 100MASS_PERCENT CO
0
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10-4
MA
SS_F
RA
CTI
ON
N
0 20 40 60 80 100MASS_PERCENT FE
0
1
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10-4M
ASS
_FR
AC
TIO
N N
0 20 40 60 80 100MASS_PERCENT FE
A) B) C)
liquid liquid liquid
Liquid + N(g) Liquid + N(g) Liquid + N(g)
=> Fe-containing binders has a much higher solubility of N compared to pure Co and Ni
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Raw materials: alternative binders
=> For same sintering conditions, addition of Fe to Co-binders leads to the formation of thicker gradient layers
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Outlook• Design of microstructure with „tailored“ properties depending on application
• Use of high resolution characterization techniques
• Thermodynamic and kinetic modeling
• Complex interaction between different processes
• Deep understanding of metallurgy for prediction of microstructure formation
Acknowledgements• Chalmers, Göteborg, Sweden, First principles calculations
• Chalmers, Göteborg, Sweden, Microscopy, microanalysis
• SIMAP, Grenoble, France, Electron microscopy
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