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The top documents tagged [gate dielectric]

Advanced Computing and Information Systems laboratory Device Variability Impact on Logic Gate Failure Rates Erin Taylor and José Fortes Department of Electrical
Advanced Computing and Information Systems laboratory Device Variability Impact on Logic Gate Failure Rates Erin Taylor and José Fortes Department of Electrical
215 views
WP2 Review Meeting Milan, October 05, 2011 MODERN ENIAC WP2 Meeting (WP2-T2.4) WP2 and Tasks review Milano Agrate, 2011 Oct. 05 Meeting hosted by Micron
WP2 Review Meeting Milan, October 05, 2011 MODERN ENIAC WP2 Meeting (WP2-T2.4) WP2 and Tasks review Milano Agrate, 2011 Oct. 05 Meeting hosted by Micron
218 views
CSE 520 Computer Architecture Lec 4 – Quantifying Cost, Energy- Consumption, Performance, and Dependability (Chapter 1) Sandeep K. S. Gupta School of Computing
CSE 520 Computer Architecture Lec 4 – Quantifying Cost, Energy- Consumption, Performance, and Dependability (Chapter 1) Sandeep K. S. Gupta School of Computing
218 views
Lecture 18
Lecture 18
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Characterization Methods of Semiconductors
Characterization Methods of Semiconductors
19 views
High K Films: Organic Field Effect Transistors Using Self Assembled Barium Titanate Nanoparticles Stephen P. O’Brien, Columbia University, DMR 0348938
High K Films: Organic Field Effect Transistors Using Self Assembled Barium Titanate Nanoparticles Stephen P. O’Brien, Columbia University, DMR 0348938
216 views
Prospects for High-Aspect-Ratio FinFETs in Low-Power Logic Mark Rodwell, Doron Elias University of California, Santa Barbara 3rd Berkeley Symposium on
Prospects for High-Aspect-Ratio FinFETs in Low-Power Logic Mark Rodwell, Doron Elias University of California, Santa Barbara 3rd Berkeley Symposium on
217 views
Process Technologies For Sub-100-nm InP HBTs & InGaAs MOSFETs
Process Technologies For Sub-100-nm InP HBTs & InGaAs MOSFETs
36 views
III-V MOSFETs: Scaling Laws, Scaling Limits,Fabrication Processes A. D. Carter, G. J. Burek, M. A. Wistey*, B. J. Thibeault, A. Baraskar, U. Singisetti,
III-V MOSFETs: Scaling Laws, Scaling Limits,Fabrication Processes A. D. Carter, G. J. Burek, M. A. Wistey*, B. J. Thibeault, A. Baraskar, U. Singisetti,
216 views
VLSI ‘Physics, Characterization and Technology’ Activities at IIT Bombay Microelectronics Group, Department of Electrical Engineering 2002 microel
VLSI ‘Physics, Characterization and Technology’ Activities at IIT Bombay Microelectronics Group, Department of Electrical Engineering 2002 microel
221 views
III-V MOSFETs: Scaling Laws, Scaling Limits,Fabrication Processes
III-V MOSFETs: Scaling Laws, Scaling Limits,Fabrication Processes
27 views
4H-SIC DMOSFET AND SILICON CARBIDE ACCUMULATION-MODE LATERALLY DIFFUSED MOSFET Archana N- 09MQ01 - 15/10/2010 PSG COLLEGE OF TECHNOLOGY ME – Power Electronics
4H-SIC DMOSFET AND SILICON CARBIDE ACCUMULATION-MODE LATERALLY DIFFUSED MOSFET Archana N- 09MQ01 - 15/10/2010 PSG COLLEGE OF TECHNOLOGY ME – Power Electronics
216 views