ta8210d 12.5w cw, 20~3000mhz gan power transistor · (32 pin 3×6×0.8mm qfn package) 2.0...

Revision 2.0 - 2019-11-15 http://www.tagoretech.com of 17

TA8210D

TA8210D – 12.5W CW, 20~3000MHz GaN Power Transistor

1.0 Features

Small signal gain @ 800MHz: >17dB

Large signal gain @ 800MHz: 16dB

PSAT @ 800MHz: 42.5dBm

PAE @ PSAT @ 800MHz: 60%

28V operation

Operating frequency: 20MHz to 3GHz

Figure 1.1 Device Image (32 Pin 3×6×0.8mm QFN Package)

2.0 Applications Private mobile radio handsets

Public safety radios

Cellular infrastructure

Military radios

RoHS/REACH/Halogen Free Compliance

3.0 Description The TA8210D is a broadband capable 12.5W GaN on Silicon power

transistor covering 20MHz to 3GHz frequency bands for power

amplifier applications. The input and output can be matched on

board for best power and efficiency for the desired band.

The TA8210D is packaged in a compact, low cost Quad Flat No lead

(QFN) 3x6x0.8mm, 32 leads plastic package.

Figure 3.1 Function Block Diagram

(Top View)

4.0 Ordering Information

Table 4.1 Ordering Information

Base Part Number

Package Type Form Qty Reel

Diameter Reel

Width Orderable

Part Number

TA8210D 32 Pin 3×6×0.8mm

QFN Tape and Reel 3000 13” (330mm) 18mm TA8210DMTRPBF

Tuned Evaluation Board, 20 ~ 525MHz TA8210D-EVB-A

Tuned Evaluation Board, 100 ~ 1000MHz TA8210D-EVB-B

Tuned Evaluation Board, 1.8 ~ 2.7GHz TA8210D-EVB-C


TA8210D

5.0 Pin Description

Table 5.1 Pin Definition Pin Number Pin Name Description

1, 2, 3, 9, 10, 11, 12, 13, 14,

15, 16, 17, 18, 19, 25, 26,

27, 28, 29, 30, 31, 32

NC No internal connection

4, 5, 6, 7, 8 VGG & RFIN Gate voltage and RF input

20, 21, 22, 23, 24 VDD & RFOUT Drain voltage and RF output

33[1] Paddle/Slug Ground

Note: [1] The backside ground slug of the device must be grounded directly to the ground plane through

multiple vias to ensure proper operation. Adequate heatsinking required.

6.0 Absolute Maximum Ratings

Table 6.1 Absolute Maximum Ratings @TA=+25°C Unless Otherwise Specified

Parameter Symbol Value Unit

Electrical Ratings

Breakdown voltage VDS +100 V

Gate voltage VGS -8 to +1.5 V

Drain current IDS 2 A

Gate current IGS 12 mA

Power dissipation CW Pdiss 25 W

RF input power CW, @800MHz RFIN 28 dBm

Storage Temperature Range Tst -55 to +150 °C

Operating Temperature Range Top -40 to +85 °C

Maximum Junction Temperature TJ +175 °C

Thermal Ratings

Thermal Resistance (junction-to-case) – Bottom side RθJC 4.0 °C/W

Thermal Resistance (junction-to-top) RθJT 40 °C/W

Soldering Temperature TSOLD 260 °C

ESD Ratings

Human Body Model (HBM) Level 1A 250 to <500 V

Charged Device Model (CDM) Level C1 250 to <500 V

Moisture Rating

Moisture Sensitivity Level MSL 1 -

Attention:

Maximum ratings are absolute ratings. Exposure to absolute maximum rating conditions for extended

periods may affect device reliability. Exceeding one or a combination of the absolute maximum ratings

may cause permanent and irreversible damage to the device and/or to surrounding circuit.


TA8210D

7.0 RF Electrical Specifications

Table 7.1 Electrical Specifications @TA=+25°C Unless Otherwise Specified;

Parameter Condition Minimum Typical Maximum Unit

Small Signal Gain 800MHz 17 dB

Large Signal Gain POUT = 41dBm, 800MHz 16 dB

PSAT 800MHz 42.5 dBm

Power Added Efficiency (PAE) POUT = 41dBm 50 %

Drain Voltage 28 32 V

Ruggedness All phase, POUT = 41dBm VSWR = 10:1

Note: Data taken from 100 ~ 1000MHz broadband reference design (EVB), VD=+28V; IDQ=160mA, CW

8.0 Recommended Operating Conditions

Table 8.1 Recommended Operating Conditions

Parameter Symbol Minimum Typical Maximum Unit

Drain Voltage VDD +12 +28 +32 V

Gate Voltage VGG -3.4 -2.9 -2.6 V

Drain Bias Current IDQ 160 mA

Drain Current IDS 900 mA

Power Dissipation CW [1] Pdiss 18 W

Operating Temperature Range -40 +25 +85 °C

Note: [1] @TC = +85°C

9.0 Typical Characteristics

9.1 Characteristics of 20 ~ 525MHz EVB

Figure 9.1 Gain and Efficiency vs POUT

(VD=28V, IDQ=160mA, CW, TA=+25°C)


TA8210D

9.2 Characteristics of 100 ~ 1000MHz EVB

Figure 9.2 Gain and Efficiency vs POUT (VD=28V, IDQ=160mA, CW, TA=+25°C)

Figure 9.3 2nd and 3rd Harmonic vs POUT (VD=28V, IDQ=160mA, CW, TA=+25°C)


TA8210D

Figure 9.4 IRL and Pdiss vs POUT (VD=28V, IDQ=160mA, CW, TA=+25°C)

Figure 9.5 IMD3 vs PEP at 450MHz (Two Tone Power Drive-Up, VD=28V, IDQ=160mA & 200mA, 450MHz, Freq Spacing = 1MHz, CW,

TA=+25°C)


TA8210D

Figure 9.6 IMD5 vs PEP at 450MHz (Two Tone Power Drive-Up, VD=28V, IDQ=160mA & 200mA, 450MHz, Freq Spacing = 1MHz, CW,

TA=+25°C)

Figure 9.7 Efficiency and Gain vs POUT over Temp at 800MHz (VD=28V, IDQ=160mA, CW, TA=+25°C)


TA8210D

9.3 Characteristics of 1.8 ~ 2.7GHz EVB

Figure 9.8 S-Parameter (VD=28V, IDQ=200mA, CW, TA=+25°C)

Figure 9.9 Gain and Efficiency vs POUT (VD=28V, IDQ=200mA, LTE(PAPR=9.5dB), 10MHz BW, TA=+25°C)


TA8210D

Figure 9.10 ACPR vs POUT (VD=28V, IDQ=200mA, LTE(PAPR=9.5dB), 10MHz BW, TA=+25°C)

Figure 9.11 AACPR vs POUT (VD=28V, IDQ=200mA, LTE(PAPR=9.5dB), 10MHz BW, TA=+25°C)


TA8210D

10.0 Bias and Sequencing

Table 10.1 Bias and Sequencing

Turn ON Device Turn OFF Device

1. Set VG to -5V

2. Set VD to +28V

3. Adjust VG to reach required IDQ current

4. Apply RF power

1. Turn RF power off

2. Turn off VD

3. Turn off VG

11.0 Evaluation Boards

11.1 20 ~ 525MHz EVB

Figure 11.1 Schematic of the 20 ~ 525MHz EVB

Figure 11.2 Board Layout of the 20 ~ 525MHz EVB

L2

4.3nH

R333ohm

L1

4.3nH

C83.9pF

VDD

C1

4.7nF

Q1RF IN

Vgg

-v e C5

100uF

C9

4.7nF

C4

0.1uF

L4

6.8nH

RF OUT

R1

5ohm

R250ohm

L3

1uH

L5

6.8nH

C24.7pF

D1

C3

0.1uF

C66.8pF


TA8210D

Table 11.1 BOM of the 20 ~ 525MHz EVB

Component ID Value Manufacturer Recommended Part Number

C1, C9 4.7nF, 50V Murata GRM1885C1H472JA01D

C2 4.7pF ATC 600S4R7CT250XT

L1 4.3nH Coilcraft 0603HP-4N3XGL

L2 4.3nH Coilcraft 0402CS-4N3XGL

L3 1.0uH Coilcraft PFL2512-102ME

L4 6.8nH Coilcraft 0603HP-6N8XJL


C3 0.1uF, 10V AVX 0603ZC104K4T2A

C4 0.1uF, 50V Murata GRM31C5C1H104JA01L

C5 100uF Nichicon UPW1J101MPD1TD

C6 6.8pF ATC 600S6R8JT250XT


R1 5.1Ω Panasonic ERJ-3RQF5R1V

R2 51Ω, 250mW Panasonic ERJ-PA3F51R0V


D1 7.5 V Zener On Semiconductor SZMMSZ5236BT 1G

Q1 Tagore Technology TA8210D

PCB Rogers RO4350B, 20 mils, 2 oz copper

11.2 100 ~ 1000MHz EVB

Figure 11.3 Schematic of the 100 ~ 1000MHz EVB

C1

4.7nF

C3

0.1uF

R250ohm

D1

C83.3pFRF IN

C9

4.7nF

Vgg

-v e

C73.9pF

RF OUT

L2

3.3nH

C5

100uF

L1

3.3nH

R1

5ohm

R333ohm

C63.9pF

VDD

28V

L3

680nH

Q1

C4

0.1uF

L4

3.9nH

C24.7pF

L5

6nH


TA8210D

Figure 11.4 Board Layout of the 100 ~ 1000MHz EVB

Table 11.2 BOM of the 100 ~ 1000MHz EVB




L1 3.3nH Coilcraft 0603HP-3N3XGL

L2 3.3nH Coilcraft 0402CS-3N3XGL

L3 680nH Coilcraft PFL2512-681ME

L4 3.9nH Coilcraft 0603HC-3N9XJL

L5 6nH Coilcraft 0603HP-6N0XGL

C3 0.1uF, 10V AVX 0603YC104K4T2A

C4 0.1uF, 50V Murata GRM31C5C1H104JA01K


C6, C7 3.9pF ATC 600S3R9CT250XT

C8 3.3pF ATC 600S3R3BT250XT

R1 5.1Ω Panasonic ERJ-3RQF5R1V







TA8210D

11.3 1.8 ~ 2.7GHz EVB

Figure 11.5 Schematic of the 1.8 ~ 2.7GHz EVB

Figure 11.6 Board Layout of the 1.8 ~ 2.7GHz EVB

C121.8pF

C15

0.1uF

C241.8pF

C142.2pF

R1133ohm

C21

0.1uF

VDD

28V

L11

1.0nH

C11

4.7nF

Q1

C26

100uF

RF IN

C132.4pF

C25

4.7nF

R21

5.1ohm

C22

4.7nF

RF OUT

Vgg

-v e

L22

22nH

L21

3.0nH

D11


TA8210D

Table 11.3 BOM of the 1.8 ~ 2.7GHz EVB







L21 3.0nH Coilcraft 1008HQ-3N0XJL

L22 22nH Coilcraft 0603HC-22NXJL

C22 4.7nF Murata GRM1885C1H472JA01D

C15 0.1uF, 10V AVX 0603ZC104K4T2A

C21 0.1uF, 50V Murata GRM31C5C1H104JA01L


C24 1.8pF ATC 800A1R8BT250XT


R21 5.1Ω, 250mW Panasonic ERJ-PA3J5R1V




12.0 Device Package Information

Figure 12.1 Device Package Drawing

(All dimensions are in mm)


TA8210D

Table 12.1 Device Package Dimensions

Dimension (mm) Value (mm) Tolerance (mm) Dimension (mm) Value (mm) Tolerance (mm)

A 0.80 ±0.05 E 6.00 BSC ±0.05

A1 0.203 ±0.02 E1 5.00 ±0.05

b 0.20 +0.05/-0.07 F 0.90 ±0.05

D 3.00 BSC ±0.05 G 0.60 ±0.05

D1 2.00 ±0.05 L 0.25 ±0.05

e 0.40 BSC ±0.05 K 0.25 ±0.05

Note: Lead finish: Pure Sn without underlayer; Thickness: 7.5μm ~ 20μm (Typical 10μm ~ 12μm)

Attention: Please refer to application notes TN-001 and TN-002 at http://www.tagoretech.com for PCB and soldering related guidelines.

13.0 PCB Land Design Guidelines: [1] 2-layer PCB is recommended. [2] Via diameter is recommended to be 0.2mm to prevent solder wicking inside the vias. [3] Thermal vias shall only be placed on the center pad. [4] The maximum via number for the center pad is 4(X)×12(Y)=48.

Figure 13.1 PCB Land Pattern (Dimensions are in mm)

Non-Solder Mask Defined Solder Mask Defined

(Preferred)

Figure 13.2 Solder Mask Pattern

(Dimensions are in mm)


TA8210D

Figure 13.3 Thermal Via Pattern (Recommended Values: S≥0.15mm; Y≥0.20mm; d=0.2mm; Plating Thickness t=25μm or 50μm)

14.0 PCB Stencil Design Guidelines: [1] Laser-cut, stainless steel stencil is recommended with electro-polished trapezoidal walls to improve

the paste release. [2] Stencil thickness is recommended to be 125μm.

Figure 14.1 Stencil Openings (Dimensions are in mm)

Figure 14.2 Stencil Openings Shall not Cover Via Areas If Possible

(Dimensions are in mm)


TA8210D

15.0 Tape and Reel Information

Figure 15.1 Tape and Reel Drawing

Table 15.1 Tape and Reel Dimensions

Dimension (mm) Value (mm) Tolerance (mm) Dimension (mm) Value (mm) Tolerance (mm)

A0 3.35 ±0.10 K0 1.10 ±0.10

B0 6.35 ±0.10 P0 4.00 ±0.10

D0 1.50 +0.10/-0.00 P1 8.00 ±0.10

D1 1.50 +0.10/-0.00 P2 2.00 ±0.05

E 1.75 ±0.10 T 0.30 ±0.05

F 5.50 ±0.05 W 12.00 ±0.30


TA8210D

Edition Revision 2.0 - 2019-11-15 Published by

Tagore Technology Inc.

5 East College Drive, Suite 200

Arlington Heights, IL 60004, USA

©2018 All Rights Reserved

Legal Disclaimer

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characteristics. Tagore Technology assumes no responsibility for the consequences of the use of this

information, nor for any infringement of patents or of other rights of third parties which may result from

the use of this information. No license is granted by implication or otherwise under any patent or patent

rights of Tagore Technology. The specifications mentioned in this document are subject to change

without notice.

Information

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Technology: [email protected].

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ta8210d 12.5w cw, 20~3000mhz gan power transistor · (32 pin 3×6×0.8mm qfn package) 2.0...

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