systemic errors in the mos conductance techniqueneil/sic_workshop/presentations...nicollian &...
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Systemic Errors in theMOS Conductance Technique
S. Swandono, D. T. Morisette, and J. A. CooperSchool of Electrical and Computer Engineering and Birck Nanotechnology Center
Purdue University, West Lafayette, IN
Supported by the II-VI Foundation Cooperative Research Initiative
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Physics of the MOS Conductance Technique
COX CD
GP(ω)
CP(ω)
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COX CD
GP(ω)
CP(ω)K. Lehovic, Appl. Phys. Lett., 8, 48 (1966).
Lehovic Distributed-State Model
(uniform distribution of states in energy)
(interface state time constant)
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Non-Uniform Fixed Charge QF
E. H. Nicollian and A. Goetzberger,Bell Syst. Tech. J., 46, 1055 (1967).
NeutralRegion
DepletionLayer
SiO2
Gate
RandomlyDistributed Fixed
Charges QF
ElectricFieldLines
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COX CD
GP(ω)
CP(ω)E. H. Nicollian and A. Goetzberger,Bell Syst. Tech. J., 46, 1055 (1967).
(normalized surface potential)
(probability density function for the variationof surface potential across the interface)
Nicollian & Goetzberger Model
(Distribution of states in energy)(sum over all “patches” under gate)
(interface state time constant)
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W. Fahrner and A. Goetzberger, Appl. Phys. Lett., 17, 16 (1970).
Interface StateCapture Cross
Section σN
Surface Potential uS
Earliest Data on σN(E) in Silicon (1970)
Exponential decrease ofσN toward the band edge.
?
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Measured Capture Cross Sections in 4H-SiCσ N
(E)
(cm
2 )
EC - E (eV)0.1 0.2 0.3 0.4 0.50
1e-20
1e-18
1e-16
1e-14 1
2
3
M. Das, Ph.D. Thesis, Purdue Univ., Dec. 1999.
3
1 2This Work
?
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Assumptions of the Nicollian–Goetzberger Model
1. Analysis limited to biases in depletion (linear uS-VG relationship).
(This allows the Gaussian probability distribution for fixed charge to be translated into a
Gaussian probability distribution of surface potential uS.)
2. Interface-state parameters (DIT, σN) vary slowly with energy.
(DIT can be taken outside the integral over surface potential.)
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Procedure to Quantify Errors1. Use an exact calculation that eliminates assumptions made by
Nicollian & Goetzberger.
2. Assume a Gaussian distribution of fixed charge P(QF),and use the exact us-Vg relationship to calculate the probability distribution of surface potential P(uS).
3. Choose specific values for DIT, σN, and σQ, and generate aGP/ω vs. ω curve.
4. Regard the GP/ω vs. ω curve as experimental data.
5. Use the original Nicollian-Goetzberger model to extract the apparent interface trap density DIT, standard deviation of surface potential σUS, and capture cross section σN.
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Assumptions of the Nicollian–Goetzberger Model
1. Analysis limited to biases in depletion (linear uS-VG relationship).
2. Interface-state parameters (DIT, σN) vary slowly with energy.
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The uS-VG Relationship
-70-60-50-40-30-20-10
01020
-3 -2 -1 0 1 2
Surf
ace
Pote
ntia
l u s
VG-VFB (V)
EC-EF = 0.2 eV
EC-EF = 0.5 eV
EC-EF = 0.8 eV
4H-SiCTOX = 40 nmND = 2e16 cm-3
AccumulationDepletion
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Effect of Non-Uniform Fixed Charge QF
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01020
-3 -2 -1 0 1 2
VG-VFB (V)
Gaussian QFTOX = 40 nmσQ = 2e11 cm-2
Surf
ace
Pote
ntia
l uS
Mapping P(QF) to P(us) at EC-EF = 0.8 eV
EC-EF =0.8 eV
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-70-60-50-40-30-20-10
01020
-3 -2 -1 0 1 2
Surf
ace
Pote
ntia
l uS
VG-VFB (V)
Gaussian QFTOX = 40 nmσQ = 2e11 cm-2
EC-EF =0.5 eV
Mapping P(QF) to P(us) at EC-EF = 0.5 eV
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-70-60-50-40-30-20-10
01020
-3 -2 -1 0 1 2
Surf
ace
Pote
ntia
l uS
VG-VFB (V)
Gaussian QFTOX = 40 nmσQ = 2e11 cm-2
EC-EF =0.2 eV
Mapping P(QF) to P(us) at EC-EF = 0.2 eV
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0
0.5
1
1.5
2
2.5
1.E-08 1.E-04 1.E+00 1.E+04 1.E+08 1.E+12
G P/ω(n
Fcm
-2)
ωτ
Effect of Bias Point (Fermi Level)
TOX = 40 nmDIT =8.48e10 eV-1 cm-2
σQ = 2e11 cm-2
EC-EF = 0.5 eV
EC-EF = 0.8 eV
EC-EF = 0.2 eV
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Effect of Oxide Thickness
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-70-60-50-40-30-20-10
01020
-3 -2 -1 0 1 2
Surf
ace
Pote
ntia
l u S
VG-VFB (V)
Gaussian QFσQ = 2e11 cm-2
EC-EF = 0.5 eV
Mapping P(QF) to P(us) at TOX = 10 nm
EC-EF = 0.5 eV
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-70-60-50-40-30-20-10
01020
-3 -2 -1 0 1 2
Surf
ace
Pote
ntia
l u S
VG-VFB (V)19
Gaussian QFσQ = 2e11 cm-2
EC-EF = 0.5 eV
EC-EF = 0.5 eV
Mapping P(QF) to P(us) at TOX = 40 nm
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-140
-120
-100
-80
-60
-40
-20
0
20
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5
Surf
ace
Pote
ntia
l uS
VG-VFB (V)
Gaussian QFσQ = 2e11 cm-2
EC-EF = 0.5 eV
EC-EF = 0.5 eV
Mapping P(QF) to P(us) at TOX = 150 nm
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Effect of Oxide Thickness
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1.E-03 1.E+00 1.E+03 1.E+06 1.E+09 1.E+12
G P/ω
(nF
cm-2
)
ω (rad s-1)
150nm40nm
10nm
σQ = 2e11 cm-2
DIT = 8.48e10 eV-1 cm-2
EC-EF = 0.5 eV
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Assumptions of the Nicollian–Goetzberger Model
1. Analysis limited to biases in depletion (linear uS-VG relationship).
2. Interface-state parameters (DIT, σN) vary slowly with energy.
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Measured DIT(E) in 4H-SiC
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Question: How much error is introduced by an exponentially increasing DIT?
To find out, choose a bias point in the linear region of the uS–VG relationship, (EF deep in the bandgap, far from the CB).
Here the only distortion is due to the exponential DIT.
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Choose a bias point with EF far from the CB
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01020
-3 -2 -1 0 1 2
Surf
ace
Pote
ntia
l u s
VG-VFB (V)
EC-EF =1.3 eV
4H-SiCTOX = 40 nmND = 2e16 cm-3
AccumulationDepletion
EC
Ei
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1E+05
1E+06
1E+07
1E+08
1E+09
1E+10
1E+11
1E+12
1E+13
0 0.5 1 1.5 2
D IT( c
m-2
eV-1
)
EC - E (eV)
α = 0
α = 0.2EC-E = 1.3 eVDIT0 = 1.09e8 eV-1 cm-2
Exponential Model for DIT(E)
Uniform
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0.0E+0
2.0E-3
4.0E-3
6.0E-3
8.0E-3
1.0E-2
1.2E-2
1.E-16 1.E-12 1.E-08 1.E-04 1.E+00 1.E+04
G P/ω
(nF
cm-2
)
ω (rad s-1)
Impact of Exponential DIT(E)
TOX = 40 nmEC-EF = 1.3 eVσQ = 2e11 cm-2
Exponential DIT
Uniform DIT
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Combined Effects
• Non-linear uS – VG relationship
• Exponential DIT(E)
• σN assumed constant (uniform with respect to energy)
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0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.E-03 1.E+00 1.E+03 1.E+06 1.E+09 1.E+12
G P/ω
(nF
cm-2
)
ω (rad s-1)
σQ = 2e11 cm-2
α = 0.2
TOX = 10 nm, (EC-EF) = 0.5 eV
ExactCalculation Fit using
Nicollian-Goetzberger
model
![Page 30: Systemic Errors in the MOS Conductance Techniqueneil/SiC_Workshop/Presentations...Nicollian & Goetzberger. 2. Assume a Gaussian distribution of fixed charge P (Q F), and use the exact](https://reader035.vdocuments.us/reader035/viewer/2022081623/6149f36b12c9616cbc6918d7/html5/thumbnails/30.jpg)
Total Error in DIT(E) at TOX = 10 nm
1.E+10
1.E+11
1.E+12
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
D IT(c
m-2
eV-1
)
EC-E (eV)
Apparent
Real
EC – EF = 0.5 eVσQ = 2e11 cm-2
α = 0.2
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1.E-18
1.E-17
1.E-16
1.E-15
1.E-14
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
σ N(c
m2 )
EC-E (eV)
Apparent
Real
Total Error in σN(E) at TOX = 10 nm
EC – EF = 0.5 eVσQ = 2e11 cm-2
α = 0.2
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0
2
4
6
8
10
12
14
1.E+02 1.E+04 1.E+06 1.E+08 1.E+10 1.E+12
G P/ω
(nF
cm-2
)
ω (rad s-1)
TOX = 40 nm, (EC-EF) = 0.5 eV
ExactCalculation
Fit usingNicollian-
Goetzbergermodel
EC – EF = 0.5 eVσQ = 2e11 cm-2
α = 0.2
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1.E+10
1.E+11
1.E+12
0 0.2 0.4 0.6 0.8
D IT(c
m-2
eV-1
)
EC-E (eV)
Apparent
Real
Total Error in DIT(E) at TOX = 40 nm
EC – EF = 0.5 eVσQ = 2e11 cm-2
α = 0.2
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1.E-18
1.E-16
1.E-14
1.E-12
1.E-10
1.E-08
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
σ N(c
m2 )
EC-E (eV)
Apparent
Real
Total Error in σN(E) at TOX = 40 nm
ϒ = 0.749
EC – EF = 0.5 eVσQ = 2e11 cm-2
α = 0.2
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0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.E+02 1.E+04 1.E+06 1.E+08 1.E+10 1.E+12
G P/ω
(nF
cm-2
)
ω (rad s-1)
TOX = 150 nm, (EC-EF) = 0.5 eV
ExactCalculation
Fit usingNicollian-
Goetzbergermodel
EC – EF = 0.5 eVσQ = 2e11 cm-2
α = 0.2
![Page 36: Systemic Errors in the MOS Conductance Techniqueneil/SiC_Workshop/Presentations...Nicollian & Goetzberger. 2. Assume a Gaussian distribution of fixed charge P (Q F), and use the exact](https://reader035.vdocuments.us/reader035/viewer/2022081623/6149f36b12c9616cbc6918d7/html5/thumbnails/36.jpg)
1.E+10
1.E+11
1.E+12
0 0.2 0.4 0.6 0.8
D IT(c
m-2
eV-1
)
EC-E (eV)
Apparent
Real
Total Error in DIT(E) at TOX = 150 nm
EC – EF = 0.5 eVσQ = 2e11 cm-2
α = 0.2
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1.E-18
1.E-16
1.E-14
1.E-12
1.E-10
1.E-08
0 0.2 0.4 0.6 0.8
σ N(c
m2 )
EC-E (eV)
Apparent
Real
Total Error in σN(E) at TOX = 150 nm
γ = 0.921
EC – EF = 0.5 eVσQ = 2e11 cm-2
α = 0.2
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Exponential σN(E) toward CB.
σUS decreasing toward CB.
Exponential DIT(E) near CB.
W. Fahrner and A. Goetzberger, Appl. Phys. Lett., 17, 16 (1970).
Surface Potential uS
DIT(E)
σUS(E)
σN(E)
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Apparent σUS vs. Energy Ap
pare
nt σ
US
EC – E (eV)
TOX = 40 nm, σQ = 2x1011 cm-2
TOX = 40 nm, σQ = 5x1010 cm-2
TOX = 10 nm, σQ = 2x1011 cm-2
Tox = constantσUS ratio ≈ σQ ratio σQ = constant
σUS ratio < Tox ratio
Exponential DIT
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Conclusions• A rapidly increasing DIT(E) and a non-linear uS-VG relationship
cause errors in the MOS conductance technique.
• Data extraction is more accurate with thinner oxides.
• The apparent energy dependence of σN is an artifact causedby an increasing DIT(E) and a non-linear uS-VG relationship.
• We are creating calibration curves to estimate the actualinterface state parameters from the apparent parametersmeasured on real devices.
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Thank you!
Supported by the II-VI Foundation Cooperative Research Initiative
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Numerical Model for GP(ω)
Single-level interface state
Loop over QF
Loop over energy
Sum over QF distribution (different “patches” under the gate)
Probability of finding this QF value
Surface potential in this “patch”
Sum over bandgap energy around EF
Fermi function evaluated at the state energy
where State time constant