syllabus

1
UNIT I 10 Hours Semiconductor diode theory: Intrinsic and Extrinsic semiconductors, Semiconductor diode under forward and reverse bias, Shockley’s equation, Zener and Avalanche breakdown, Comparison between Si, Ge and GaAs diodes, temperature effects, Ideal versus Practical diode, Diode resistances, Diode equivalent circuits, Zener diode characteristics, Light-emitting diodes, Series diode configurations. UNIT II 10 Hours Semiconductor diode applications: Diode OR and AND gates, Half-wave, Full-wave and bridge rectifier, ripple factor derivations, Peak inverse voltage. General filter considerations, Shunt capacitor filter with derivation for ripple factor. Zener diode voltage regulator, Regulated power supply. UNIT III 10 Hours Digital electronics: Basic gates(review), Boolean Algebra, Boolean laws and theorems, Simplification of Boolean expressions, Universal gates – NAND and NOR, SOP expression, Arithmetic building blocks – Half and Full Adder, Data-Processing circuits – Multiplexers, Demultiplexers, 1-of-16 Decoder, BCD-to-decimal Decoders, Encoders. UNIT IV 14 Hours Bipolar junction transistors: Transistor construction, transistor operation, Transistor configurations - Common base and common emitter configurations – input and output characteristics, common collector configuration. Transistor amplifying action. Basic CE amplifier, DC load line and operating point. Selection of the operating point, Need for bias stabilization. Biasing circuits: Fixed bias, Emitter resistor bias, Voltage divider bias, Bias

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UNIT I 10 HoursSemiconductor diode theory: Intrinsic and Extrinsic semiconductors, Semiconductor diode under forward and reverse bias, Shockleys equation, Zener and Avalanche breakdown, Comparison between Si, Ge and GaAs diodes, temperature effects, Ideal versus Practical diode, Diode resistances, Diode equivalent circuits, Zener diode characteristics, Light-emitting diodes, Series diode configurations.

UNIT II 10 HoursSemiconductor diode applications: Diode OR and AND gates, Half-wave, Full-wave and bridge rectifier, ripple factor derivations, Peak inverse voltage. General filter considerations, Shunt capacitor filter with derivation for ripple factor. Zener diode voltage regulator, Regulated power supply.

UNIT III 10 HoursDigital electronics: Basic gates(review), Boolean Algebra, Boolean laws and theorems, Simplification of Boolean expressions, Universal gates NAND and NOR, SOP expression, Arithmetic building blocks Half and Full Adder, Data-Processing circuits Multiplexers, Demultiplexers, 1-of-16 Decoder, BCD-to-decimal Decoders, Encoders. UNIT IV 14 HoursBipolar junction transistors: Transistor construction, transistor operation, Transistor configurations - Common base and common emitter configurations input and output characteristics, common collector configuration. Transistor amplifying action. Basic CE amplifier, DC load line and operating point. Selection of the operating point, Need for bias stabilization. Biasing circuits: Fixed bias, Emitter resistor bias, Voltage divider bias, Bias