summary of existing prototypes

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Peric, Monolithic Detectors for Strip Region 1 Summary of existing prototypes

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Summary of existing prototypes. Summary of existing prototypes. AMS H35 HVPixel monolithic test detector – continuous readout with time measurement (one system available, chips: todo ) CCPD1 capacitive coupled pixel detector – continuous readout wtm - PowerPoint PPT Presentation

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Page 1: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region 1

Summary of existing prototypes

Page 2: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region 2

Summary of existing prototypes

• AMS H35• HVPixel monolithic test detector – continuous readout with time measurement• (one system available, chips: todo)• CCPD1 capacitive coupled pixel detector – continuous readout wtm• (one system available, chips: todo)• CAPSENSE/CAPPIX edgeless capacitive coupled pixel detector – continuous readout wtm• (one system available, chips: todo)• HVPixelM monolithic test detector - rolling shutter RO• (one system available, chips: todo)• AMS H18• MuPixel monolithic test detector – continuous readout with time measurement• (one system available, chips: todo)• HV2FEI4 CCPD detector• (several systems available, chips: todo)

Page 3: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region 3

Summary of existing prototypes

HVPixel – CMOS in-pixel electronics with hit detectionBinary RO

Pixel size 55x55μmNoise 60e

MIP seed pixel signal 1800 eTime resolution <100ns

CCPD2 (CAPPIX) - capacitive coupled pixel detector

Pixel size 50x50μmNoise 30-40e

Time resolution <300nsMIP SNR 45-60

HVPixelM chip - frame mode readoutPixel size 21x21μm

4 PMOS pixel electronics128 on-chip ADCs

Noise: 21e (lab) - 44e (test beam)MIP signal - cluster: 2000e/seed: 1200eTest beam: Detection efficiency >98%

Seed Pixel SNR ~ 27Cluster signal/seed pixel noise ~ 47

Spatial resolution ~ 3 m

Irradiations of test pixels60MRad – MIP SNR 22 at 10C (CCPD1)

1015neq MIP SNR 50 at 10C (CCPD2)

Monolithic detector -frame readout

Capacitive coupled hybrid detector

Monolithic detector – continuous readout

with time measurement

Technology 350nm HV – substrate 20 cm uniform

CCPD1 - capacitive coupled pixel detectorPixel size 55x55μm

Noise 70eTime resolution <100ns

MIP SNR 25

Page 4: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region 4

HVPixel

Monolithic matrix CCPD matrix (sensor)

CCPD matrix (readout)

Page 5: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region

CCPD1

Sensor pixels

Readout pixels

Chip A

Chip B

Signal transmission

wire bonds

chips

Monolithic matrix CCPD matrix (sensor)

CCPD matrix (readout)

Electrodes

Standard CCPD55x70 µm pixel size

5

Page 6: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region 6

CCPD1

Page 7: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region

Edgeless CCPD (CAPSENSE/CAPPIX)

0 500 1000 1500 20000.0

0.2

0.4

0.6

0.8

1.0

Effi

cien

cy

Signal [e]

Efficiency - window 800ns

CAPPIX/CAPSENSE edgeless CCPD50x50 µm pixel size

Pixel matrix efficiency:Detection of signals > 350e possibleMIP signal ~ 1800 e

7

Page 8: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region

HVPixelM

The type 1 chip HVPixelM: Simple (4T) integrating pixels with pulsed reset androlling shutter RO21x21 µm pixel size

Seed pixel SNR 27, seed signal 1200e, cluster 2000e

Spatial resolution 3-3.8µm

Efficiency vs. the in-pixel position of the fitted hit.Efficiency at TB: ~98% (probably due to a rolling shutter effect)

Page 9: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region 9

Irradiation with protons at KIT (1015 neq/cm2 and 300MRad)

0.0 0.2 0.4 0.6 0.80.0

0.2

0.4

0.6

0.8

1.0

~num

ber o

f sig

nals

signal amplitude [V]

RMS Noise, 2.4mv (40e) 55Fe, 100mV (1660e) 55Na, 220mV (3750e)

Temperature -10CIrradiated with protons to 1015n

eq

0.0 0.2 0.4 0.6 0.80.0

0.2

0.4

0.6

0.8

1.0

~num

ber o

f sig

nals

signal amplitude [V]

RMS Noise, 2.8mv (77e) 55Fe, 60mV (1660e) 55Na, 180mV (4980e)

Temperature 10CIrradiated with protons to 1015n

eq

0.0 0.2 0.4 0.6 0.80.0

0.2

0.4

0.6

0.8

1.0

~num

ber o

f sig

nals

signal amplitude [V]

RMS Noise, 13mv (270e) 55Fe, 80mV (1660e) 55Na, 200mV (4150e)

Temperature 20CIrradiated with protons to 1015n

eq

55Fe and 22Na spectrum, RMS noiseIrradiatedTemperature 20CRMS Noise 270 eSNR = 15

55Fe and 22Na spectrum, RMS noiseIrradiatedTemperature 10CRMS Noise 77 eSNR = 64

55Fe and 22Na spectrum, RMS noiseIrradiatedTemperature -10CRMS Noise 40 eSNR = 93

55Fe

22Na

Page 10: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region 10

Irradiation with x-rays (50 MRad)

600 700 800 900 1000 11000.0

0.2

0.4

0.6

0.8

1.0

resp

onse

pro

babi

lity

signal amplitude [e]

Response probabilityfit: sgma = 72e, mean = 750eNot irradiatedRoom temperature

500 600 700 800 900 10000.0

0.2

0.4

0.6

0.8

1.0

resp

onse

pro

babl

ility

signal amplitude [e]

Response probabilityfit: sgma = 83e, mean = 610eIrradiated with x-rays to 60MRadTemperature 5CNoise

Before irradiationRoom TemperatureNoise 72e

NoiseAfter irradiationTemperature 5CNoise 83e

0 20 40 60 80 100 1200

50

100

150

200

250

300

350

400

NoiseRoom temperature annealiingday 0: irradiation with x-rays to 60MRadday 5: 24 hours at 80C

nois

e [e

]

annealing time [days]

Noise at room TemperatureVs. annealing time

Page 11: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region

MuPixel

11

92µm

Page 12: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region

MuPixel (RO-cell)

12

TS DRAMAddress ROM

CMOS digital part

Comparator

Coupling capacitorDAC and SRAM7µm

46 µm

Page 13: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region

MuPixel

13

0 200 400 600 800 1000 1200 14000

50100150200250300350400450500550600650700750800850

Inpu

t ref

erre

d th

resh

old

[e]

Pixel position

450 500 550 600 650 700 750 8000

50

100

150

200

250

Num

ber o

f pix

els

Input referred threshold [e]

Fir center 643 eSigma 50 e

700 800 900 1000 1100 12000

100

200

300

400

500

Num

ber o

f pix

els

Signal for full efficiency [e] 800 1000 1200 1400 1600 1800 2000 2200

0,0

0,2

0,4

0,6

0,8

1,0

mu 1934 esig 57 e

Res

pons

e pr

obab

ility

Inout referred threshold [e]

Threshold tune not optimal(changed in the new version)

Page 14: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region

MuPixel test beam

• Test-beam measurement February 2014 DESY• Performed by our colleagues from Institute for Physics

14

Page 15: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region

MuPixel test beam

• Test-beam measurement October 2013 DESY• Performed by our colleagues from Institute for Physics

15

80ns

Probably caused by indirect hits

Page 16: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region

HV2FEI4

16

• HV2FEI4

2

3

1

2

3

1

CCPD Pixels

Page 17: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region

HV2FEI4

17

• Standard pixels• Pixel efficiency measurement• For every pixel efficiency and number of noise hits are measured• No noise hits observed• About 99% pixels detect signals of ~1025 -1125 e.

800 900 1000 1100 1200 13000

100

200

300

400

500

600

700

800

Pix

el n

umbe

r

Charge detected with 100% efficiency [e]

No pixel has noise hits

800 1000 1200 1400 16000

100

200

300

400

500

600

700

800

Num

ber o

f Pix

els

Signal seen with 100%ed efficiency [e]

99% pixels measure signals of 1050e with "100%" efficiency

Page 18: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region

HV2FEI4: segmented strip measurements

18

• Analog encoding of pixels positions in the case of the segmented strip readout

Amp

Monitor

Chip

Oscilloscope

Th1

0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,80

100

200

300

400

500

600

700

800

Cou

nts

Measured voltage [V]

Analog addresses

Fe55

Absorber

Page 19: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region

HV2FEI4: neutron irradiation 1015 neq/cm2

• No evidence of signal decrease after 1015 neq/cm2

19

0,00 0,05 0,10 0,15 0,20 0,25 0,300

2000

4000

6000

8000 90Sr spectrumrecorded by irradiated chip (1015n

eq/cm2)

Num

ber o

f sig

nals

[V]

Amplitude [V]

0 1000 2000 3000 4000 5000 6000 7000 80000

2000

4000

6000

800090Sr spectrumrecorded by irradiated chip (1015n

eq/cm2)

Num

ber o

f sig

nals

[V]

Amplitude [e]

Page 20: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region

HV2FEI4: x-ray irradiation to 862 Mrad

20

• CCPD2 implements three pixel types, fully rad hard, partially rad hard and a simple pixel that uses positive feedback and has a CMOS comparator

• A detector has been irradiated to 862 Mrad with x-rays. (chips on during the irradiation, 2 hours of annealing at 70C after each 100Mrad)

• Result for one partially rad hard pixel: input referred noise before irradiation 25mV (90 e)• Input referred noise after irradiation 40mV (150 e) at room temperature

862 Mrad90e 150e

Page 21: Summary of existing prototypes

Ivan Peric, Monolithic Detectors for Strip Region

HV2FEI4: test beam

21

• Test beam

Threshold tune not optimal(changed in the new version)