Subject Index

A

Absorpt ion, 30 Absorpt ion layer, 198,214-5,217,223 Acousto-opt ic effect. 46 Addressable array, 289

individually addressable array, 289 matrix, 289

Adiabatic coupling, 238 Adiabatic mode expansion (AME), 243,

253 AlAs, 62, 64, 90 AIGaAs, 50-55,63,89,91,97,145,203,

278, 322 Alignment, optical, 5,305,384

active/passive, 398 accuracy, 384 sensitivity, 390 pedes ta I and f i duc i a I. 349

Alumina ( AI 2 0 3)' 112,380 Amplified spontaneous emission CASE),

242 Amplifier, oPtical.

amp I ified single pass gain, 342 erbium doped fiber amplifier (EDFA),

255 polarization independent. 267 semiconductor optical, 346-51,358,

366 Annealing, 215

rapid thermal annealing (RTA) , 112 Anti-reflection (AR) coating, 240 ARPANET, 435 Assembling technology, 9,306 Asynchronous transfer mode (ATM)

switching, 308,331,432,436

Atomic layer epitaxy (ALE), 76 Atomic layer etching, 136 Atomic layer mask, 134 Attenuation constant, 20,37 Avalanche photodiode (APD) , (See

also SAM-APD), 194,198,201. 429

B

Backplane interconnection, 437 Balanced-PIN pair, 219,223 Balanced receive~ 26~ 265 Band-edge, 64 Bandgap, 62, 63

- versus lattice constant. 62 Bandgap lineup, 63 Band offset, heterojunctio~ 63, 16~

161 Bandwidth,

transmission channel. 28,29 grating, 256

Banyan tree network, 345 Base recombinat ion current in HBT, 162 Base resistance in HBt 143,144 Beam lead technology, 345 Beam propagation method (BPM) , 238 Binary opt ics, 359 Bipolar transistor (BPT) , 54,56 Bi t error rate (BER), 179,196,250,251

relation with SIN ratio, 333 Bi t of information, 29 Bistable laser, 7 Blue shift. 283 Board-level interconnectio~ 437-8 Boltzmann transport equation, 46 Bonding by atomic rearrangement (BAR),

175-77,183

448

Bragg reflection, 24,46,69,214 Bragg wavelength, 150,152 Broadband-integrated service digital

network (B-ISDN),6 Bump bonding, (See also Solder bump),

350 Buried heterostructure (BH), 95-97,

145, 173 Butt-coupled fiber, 388

c Capacitors, 209 Carrier depression, 112 Carrier recombination lifetime, 147,

152 Cascode amp Ii f i er, 196, 197, 213, 217, 218 Cavi ty loss, 147 Channe I no i se f ac tor in FET, 195, 225,

226 Channel substrate buried cresent

(CSBC) laser. 147 Characteristic temperature of laser,

148 Characterization of fil~ 91 Chemical beam epitaxy (CBE), 71,83 Chirp, wavelength/frequency, 156,166 Clock recovery, 325,335-7 CMOS, 2,311,329,337 Coheren t rece i ver. (See Rece i ver) Compac t disk (CD), 1. 8, 440 Computer aided design (CAD), 10,225,

236 Compressive strain, 65,87 Contaminat ion, 121. 122,137

carbon, oxygen, 122 Contrast ratio in optical switch, 122 Cost (of components), 2,248 Coulomb blockade, 52 Coupling constant in DBR, 286 Coupl ing, optical.

adiabatic, 238 ba t t. 239, 388 efficiency, 240,387 loss, 393, 385

Critical thickness for strai~ 8~ 86

Crossbar, 325,330,332,345-6,355 Cross-connect, 431, 439 Crosstalk, 219,264,321,330,334,340-5,

356, 383 in OEIC receiver, 219,334 in OEIC transmitter, 340-5 in spectrometer on a chip, 264 in opt ical swi tch, 356 electronic, 383

Current gain in HBT. 143-5,172,180 Cutoff frequency

FET, 158, 160, 183 HBT. 163,216 HEMT, 214 rece i ver c i rcu it. 198

D

Damage effect of etching, 118,120,135 EB induced -, 121 ion-beam induced -, 121

Defect in crystal. 89 Degradation of device, 89 Demultiplexer (DMUX) , 325,335,338 Density of states, 36,67,68 Densi ty matrix, 33 Detector. (See photodetector), 55 Dielectric constant, 19,380 Differential gain, 147,153,156,157 Differential quantum efficienc~ 147 Diffractive optical element. 305, 359 Dipole moment, 30-32 Directional coupler, 24,26,265 Distributed Bragg reflection, 170 Distributed Bragg reflector (DBR),

DBR laser, 7,251,253,255,227,259 lateral. 150 vertical, 273, 294

absorpt i vi ty, 297 reflectivit~ 286 threshold gain, 297

Distributed feedback (DFB), 150-1. 155-7, 171-2, 179-81. 183

DFB laser. t 252 Distributed Queue Dual Bus (DQDB), 436 Dislocatio~ 87-9,175

Double channel planar buried hetero­structure (DCPBH) laser. 147-8. 151

Double heterostructure (DH). 96.124. 145-6. 157

Double heterostructure optoelectronic switch (DOES). 291.361

Drain conductance. 196. 198 DRAM. 2 Dry etching. (See also etching). 112

E

Effective mass. 49.87 Effective refractive index. (See also

Refractive index). 150 Einstein coefficient. 33-4 Electrical resistivity. 380 Electric conduction/conductivity. 46.

48 Electric susceptibi I ity. 19.33.38 Electroabsorption. 283 Electroabsorption (EA) modulator.

245.249.252.262.342 Electromagnetic interference. 321.349.

353.356.358 Electron cyclotron resonance (ECR)

plasma. 111.115-7 Electron-hole pair. 56. 199 Electron penetration depth. 128 Electro-optic CEO) effect. 24.38-9 Electrophotonic device. 273 Emission. light. 30 Energy loss rate of ionized particle.

128. 129 Entropy. Shannon' s. 28 Epi-in-a-well approach. 328.333.339.

362. 367 Epitaxial lift-off (ELO). 175-6.183.

350-1. 363 Epi taxy.

CBE. 71. 83 GSMBE. 71 heteroepitaxy. 75. 7~ 157. 175. 183 laser stimulated growth. 100 LPE. 9.329

MBE. 71.121.132.211.329.334.339 migration enhanced epitaxy. 76 MOMBE. 71. 73-4 MOCVD. MOVPE. OMCVD. OMVPE. (See

MOVPE). 71-4

449

selective epitaxy. 243.252 Equivalent noise current. 195 Erbium doped fiber amplifier (EDFA).

255 Error rate. (See also bi terror

rate). 27 Etching

anisotropic. 113.118.136.400 CH 3 Br gas. 114 CI 2 gas. 116-7 damage. 118 dry. 113 equi-rate. Al GaAs/GaAs. 116 FIB-assisted gas. 121 Full-wafer technique. 119 Hot-CI 2 molecular-be~ 135 Ion-beam (IBE). Ar. 110-1 Ion-beam assisted CIBAE). 115 mask. 132-3 photo-assisted. 135 rad i ca 1. 119. 135 reactive ion (RIE). 113.118 reactive ion beam (RIBE). 115-6. 118 selective. 114 wet. chemical. 111. 113

Ethernet. 436 Evanescent light. waveguide. 244 Exciton. 90-1.275

I inewidth. 90 Exciton absorptive reflection switch

(EARS). 284.361 Extended cavity laser. 254 Extinction constant. 21 EYe pattern. 163.167, 179.257

F

Fabr it-Perot. 148. 150. 170. 179 asymmetric. 277 coupling constant. 286

Fabrit-Perot etalon. 273

450

Fabrit-Perot laser. 245 Fabrit-Perot mode. 257 Fabrit-Perot resonator. 39

reflection/transmission in. 275-6 Far-field pattern. laser. 243 Fermi distribution function. 35.47 Fie I d-eff ec t trans is tor (FET). 53. 55.

158-61.322.333-41.347.359.361 cutoff frequency. 158 drain conductance. 159. 196. 198 source res i stance. 158 structures. (See HFET. HIGFET. HEM!'.

IGFET. JFET. MISFET. MODFET. OPFET. PMHEM!'. HEM!'. TEGFET)

transconductance. 158-9. 178. 195-8. 205.212.214.220.212

Fiber distributed data interface (FDD I). 331. 436

Fiber-in-the-Ioop (FITL). 433.439.441 Fiber optic communications. 143 Fiber ribbon. 403 Fiber-to-the-curb (FTTC). 424.433 Fiber-to-the-home (FTTH). 6. 144. 191.

424.441 Filter. wavelength. 259

vertical waveguide coupler. 259.260 Finesse of cavity. 278 Focused ion beam (FIB). 121 Focused ion beam-molecular-beam

ep i taxy (F I B-MBE). 121-3. 134 Flip-chip bondin& (See also solder-

bump). 194.306.404 Franz-Keldysh effect. 45. 250.342 Free carrier absorption. 286.296 Free carrier loss. 147 Free-space interconnect. 322-4.360-2 Front-end. receiver. 197 Full-wafer technology. etching. 119 Functionality of device. 5.232.361

G

GaAs. 50-5.62-6.78-9.84-8.203.278-. 322-

GaAs oxide. 129-30. 134 Gain. optical. 38.145-6.149

Gain-bandwidth product of photodetector. 200-1

Gas source MBE (GSMBE). 71 Gaussian beam approximation. 384 Global network. 429 Graded index (GRIN) lens. 165.390-1 Graded structure. bandgap. 294

pseudograded structure. 294 Grating. 26.256

bandwidth. 256 demu I t ip lexer. 193-4 first order. 256 refractive index. 257

GRINSCH laser. 339 Growth interrupt ion. 122

H

Hamiltonian. 30-2 Heat sink. 410-1 Hermetic packaging. coating. 379 Heteroepitaxy. 75.77.157.175.183

lattice-mismatched (non-Iattice­matched). 87.202.205

GaAs and InP on Si. 87-8.329 GaAs on InP. 174

Heterojunction band alignment. 63 Heterojunction bipolar transistor

(HBT). 144.161-3.166-9.173-5. 179-80.207.216.322.327-9.249.361

base recombination current. 162 base resistance. 143-4 current gain. 162-3 cutoff frequency. 163

Heterojunction FET (HFET). 206 Heterojunction insulated gate FET

(HIGFET). 201.207-8 Heterojunction phototransistor (HPT).

283.329.361 High electron mobility transistor

(HEM!'). 114.118.201-24.334.369 A I GaAs/GaAs. 204-5. 208 AllnAs/lnGaAs/lnP. 201-8.214.219-24

High-speed electric signal. 384 SPICE simulation. 164

HIPPI transmission standard. 437

Holding voltage in VSTEP. 301 Hologra~ 305.391-2

computer-generated (CGH). 391 holographic oPtical element. 359

Hybridization. 10 Hybrid module. 426 Hybrid (optoelectronic) integration.

3.333-7.340.350-4.361-5.377.396 Hybrid receiver. (See also receiver).

194. 198. 202. 205. 225-6

I

ICs. Si and GaAs. 2.6.308 Impurity-induced disordering of MQW.

328 In-alloy system. 118

InAIGaAs. 221 InA lAs. 75.219-21.219 InGaAs. 65-6.75.86-7.92-6.98.285 InAs. 26.64 InGaAIP. 67 InGaAsP. 89.93.96.99.145.155.224.

241. 252 InGaP. 75.87 InP. 62.64.66.86.155.203.241

Index matching. 42 Index of refractio~ 14~ 151. 159 Induced emission. 33 Information. 28 In-situ optical evaluation. 80 In-situ process. lOt 135

EB. 1 i thography. 126. 129. 133 UHV. 121. 125-6. 137

In-si tu surface moni toring. 78 Insulated gate FET (IGFET). 206 Integrat ion. optoelectronic devices.

2. 376. 395 hybrid. 2.296.377. large-scale (LSI). 303 monolithic. 2.54-5 two-dimensional (2-D). 2.7.274

Integrated optics. 4.6 Inter-digitated contact. 20~ 209 Interface. growth. 84 Interface disorder. 91

451

Interface state (densi ty). 123 Ion implantation. ll2. 121. 201-2. 213-4

J

Johnson (therma 1) no i se. 195 Junction field-effect transistor

(JFET). 159.206.212-3.217-8.223

K

Kerr effect. 39

L

Laser diode (LD). 17.52 buried heterostructure (BH). 95-t

145.173 chirp. wavelength/frequency. 156.166 CW laser. 2 DBR laser. 7. 251. 253. 255. 257. 259 DFB laser. 7. 252 differential quantum efficiency. 147 extended cavity laser. 254 Fabrit-Perot laser. 245 facet (mirror) formation. 112-3. ll9 GRINSCH laser. 339 laser driver. 158-9.163-172 1 inewidth. 157 linewidth enhancement factor. 156.

248 long wavelength laser strucrures.

147-8 micro-cleaved mirror. 110.338-9 moda I ga i n. 150-1 mode hop. 257 mode-locked laser. 247 modulation characteristics. 152 quantum well laser. 157.173.177.180 re laxa t i on resonance frequency. 154 side mode suppress i on ratio. 152. 197 threshold current. 87.97.145-6.170.

286 threshold gain. 147.151-2.277.286 vertical cavity surface emitting

laser (VeSEL). 273.285.361-3.365

452

Laser array. monolithic. 262.399. 407-8.413-5

N-frequency laser array. 259 Laser assisted CBE growth. 100 Laser driver. 158-9.163-172 Laser stimulated growth. 100 Laser welding technique. 394 Lateral current injection (LCI) laser.

327 Lattice constant. 62 Lattice match. 64.75 Lattice mismatch. (See also

Heteroepitaxy). 87 Leakage current. 195.225 Lens

aspheric. 390 circular. Luneberg. 25 Graded index (GRIN). 165.390-1 SELFOC. 391 spherical. 390

Lensed fiber. 388 Level shifting diode. 164.209.218 Light emitting diode (LED). 60.327.

333.359.362 Light source. 53 Linear electro-optic (EO) modulator.

327.343.347 Linewidth. emission. 33 Linewidth. laser. 157 Linewidth enhancement factor. 156.248 Liquid phase epitaxy (LPE). 9. 329 Lithium niobate. 6.54 Lithography. 126

In-situ EB. 126 vacuum, 125

Long-haul network. 429 Local area network (LAN). 5.324.331.

424.435 Local distribution network. 433 Local oscillator laser. 264

M

Mach-Zehnder CMZ) modulator. 251.343. 344.347-8.357

Magneto-optic OMO) effect. 39.43.266

Manufacturability of components. 5. 362.397

Market of OEIC. 440-2 Mask. (See also Ii thiography). 134

atomic layer. 134 resist. 134

Maskless process. 111 Master oscillator power amplifier

(MOPA). 254 Materials for packaging. 380 Matrix element. 32 Max imum osc i 11 a ti on frequency. 158 Maxwe II equat ion. 18.236 Mechanical alignment. solder bump. 406 Mesoscopic phenomena. 51 Metal-insulator-semiconductor FET

(MISFET). 159. 206-7 Meta11 izat ion. 111 Metal organic chemical vapor

depos i tion CMOCVD). (See MOVPE) Metal organic MBE (MOMBE). 71.73-4 Metal organic vapor phase epitaxy

OMOVPE). 71.73-4.172.211.217-8. 221-4.235.333.339.347-8.358.370

Metal-semiconductor FET CMESFET). 159. 175. 183. 196. 200-7. 221-2. 326. 333. 337.348.362.369.371.372

Metal-semiconductor-metal (MSM) photodiode. 198-201.211-6.220-4. 333-7.414-5

Micro-cavi ty. 112 Micro-cleaved mirror. 110.338-9 Microlens. 392 Micro-optics. 4.274.305 Microstrip transmission line. 383-4 Migration enhanced epitaxy. 76 Mi 11 imeter wave system, 321. 325. 354.

358.365 Mirror fabrication. laser. 118 Misalignment. optical. 384 MIS-like FET. 207 Mixed crystal growth. 75 Mobility. electronic. 48-9 Modal gain. 150-1 Mode hop. laser. 257 Mode locked laser. 247

Modes. guided wave. 22 TE and 1M. 236-7

Mode transformer. 387 Modulation. AM in VCSEL. 288 Modulation-doped FET (MODFET). (See

also HEMT). 144.159-61. 164. 169-72.334.369

Modulation doping. 49 Modulator. optical. 262.284.342-9.

352-8. 370-3 absorptio~ (See also Electro-

absorption modulator). 342 electro-oPt ic. 343 Mach-Zehnder. 251.343-4.347.357 phase. 343. 370 spatial light modulator(SLM). 360.

363.365 waveguide. 323.332.342-9

Module. 376.377 multitechnology. 377

Molecular-beam epitaxy (MBE). 71.121. 132.211.329.334.339

Momentum. 27 Monolithic integration. (See

Integrat ion) Mono I i thic microwave IC (MMIC). 225.

328.337.352-6.358.372 Multichamber system. UHV. 132.134 Multichip module CMCM). 3.10.323-4.

365.377.382.396,426-7,438 oPtical/optoelectronic. 395

Multi-layer print board. 308 Multimode waveguide. 386 Multiple input multiple destination

CMIMD). 331 Multiple quantum well (MQW). (See also

QW). 36.69.118.235.252.275 Multi-wavelength network. 431.434 Multi-wavelength transmission. (See

also WDM). 193 transmi t ter. 179

N

Noise. 28 electronic. 383

equivalent current. 195 Non-alloy contact. 112

453

Non I a tt i cerna t ched he t eroep itaxy. (See Heteroepitaxy)

Nonl inear gain. 152-4 Nonl inear (opt ica]) effect. 38-9.43 Nonradiative recombination. 122

o OEIC, 2.6.7,

GaAs-based. 2.11.273-,321-InP-based. 11. 143-. 191-.233-S i-based. 8

Ohm' slaw. 49 Operator. annihi lation/creation. 32 OPtical amplifier. fiber. (See also

EDFA). 385 OPtical amp I ifier. semiconductor. (See

also amplifier). 241.253 OPtical backplane, 338.351.365.369 Optical bistability. 38-41,280-2 OPt ical c i rcu i t. 306

transmission/reflection i~ 306 OPtical computing. 5.6 OPtical demul tiplexing, 193-4 OPtical-FET (OPFET), 354 Optical fiber. 379.390 Optical fiber cOflDllunications. 5 Optical function utilization factor in

integration, 363-4 Optical gain, 38,145-6,149

amp I Hied single pass gain. 342 threshold gain. 147,151-2.277.286

OPtical interconnection. 5. 6. 321. 336. 365.371.396-7.406-10

digital interconnect~ 330-phased array radar. 352-free space. 322,334,370.372 subsystems on Si, 406-10

OPt ical loss in cavi ty. 286 internal. 286

OPtical neural network. 310.360 Op t i ca I memory, storage. 1 Op t i ca I rece i ver. (See Rece i ver) Optical regenerator/repeater. 223-4

454

Optical sensitivity. (See Receiver) Optical switching. (See also Photonic

switching). 280.303 switching energy. 280.303

Optical (tele)coonnunication system. 5. 143. 191. 233

app Ii ca ti ons. (See B- ISDN. FDD I. FTTH. LAN. MIMD. SDH. SONET)

Op t i ca I wavegu i de. (See a I so Waveguide). 222-4

Optoelectronic celluler array (DCA). 361

Optoelectronic conversion. 4 Optoelectronic integrated circuit.

(See also OEIC). 2.3.7.8.53. 144-. 191-.321-

Optoelectronic integrated functional device. 4

OPtoelectronic integration. 3.191.233. 322.367-8.375

OPtoelectronic packaging. (See Packaing technique)

Organo-metallic CVD (oMCVD). (See MOVPE)

Organo-metall ic VPE (OMVPE). (See MOVPE)

Oscillator strength. 283

p

Packaging technique. 10.350.376.427 beam lead technology. 345 bump bonding. 350 cost. 434.439.440 fl ip-chip bonding. 194.306.404 heat sink. 410-1 hermetic coating. 379 hierarchy. 376 laser welding. 394 materials. 380 mechanical alignment. 406 module. 376-7 multichip module (MCM). 3.10.323-4.

365.377.382.396 multi-layer print board. 308 passive/active alignment. 394

platform. 376 solder-bump bonding. 350.380.404 solder ref low. 405 surface mount technology (SMT). 380

Parasitic. 5.154.162-4.169.172.196 Paras i tic impedance. 196 Passive optical devices. 24 Passive waveguide. 234.253 Patterned dielectric mask. growth on.

97 Patterned substrate. 93

growth on. 94-5 Pattern formation. 129.133-4 Personick integral. 195 Phase. 20 Phase matching. 42.244

quasi-phase matching (QPM). 43 Phase velocity. 20 Phased array antenna. 352-7.359.365.

372 Photoconductor. 201 Photodetector.

APD. 56. 201 coupling to fiber. 411 gain-bandwidth product. 200-1 MSM photodiode. 198-201.211. -6.

220-4.333-7.414-5 photoconductor. 56.201 phototransisto~ (See also Hetero­

junction phototransistor (HPT)). 7

p-i-n photodiode. 55-6.198-200. 210-2.214.216-9.221-4

quantum efficiency. 196.199.217.220 shot noise. 195.199 variable sensitivity photodetector

(VSPD). 311 Photodiode (PD). (See also

Phtodetector). 55 Photoluminescence (PL). 99.250-2

broadening of exciton PL in QW. 90-1 EB irradiation effect on PL

intens i ty. 127-8 PL intensity in narrow wires. 120 PL wavelength versus mask width in

selective epitaxy. 99.252

Photon, 27, 41 Photon Ii f e time, 153 Photonic integrated circuit (PIC), 4,

7, 233-, 322-GaAs-based, 322-InP-based, 233-

Photonic integrat ion, 232 Photonic parallel memory CPPM) , 289 Photonic switching, 5,308 Photon recycling, 302 Phototransistor/LED integrated device,

290 p-i-n photodiode, CSee photodetector) p- i -n FET rece i ver. 180, 225 Planar BH (PBH) laser, 147 Planar multifunctional epistructure

(PME) , 327-8,348,367-8 Planar structure of DEIC, 108,110,

112, 130, 326-8 Plasma effect. refract ive index, 396 Plasma Cenhanced) CVD CPCE)CVD), 111

ECR-PECVD, 111 SiN depositio~ 21Z 217

Plastic fibers, 347 Plane-selective CBE growth, 95-6 Plank's formula of thermal radiation,

35 Platfor~ packaging, 376 p-n junction, 199.201. 235 pnpn device. 291 Pocke I s eff ec t. 39 Polarization independent optical

amp I ifier, 267 Polarization of material. 19.38 Polarization sensitivity, 266 Power covers ion efficiency. 301

electrical-to-oPt ical. 301 Production scale, optoelectronics, 8,9 Pseudomorphically strained layer, 66 Pseudomorphic HEMT (PMHEMT), 205

Q

Quantum, 27 Quantum confined energy, 68 Quantum confined Stark effect CQCSE),

44-5. 275, 342 Quantum dot/box, 66-8

455

Quantum efficiency, 120,196,199,217, 220, 286

external. laser, 147 external differential. vertical

laser. 286 internal. vert ical laser. 286 photodetector, 196, 199,217,220

Quantum-DEIC CQ-DEIC). 112.120.136 Quan t urn we II. (See a I so MQW). 36-7. 52,

66-8. 90, 153, 182 Quantum well laser. 157.173.177,180 Quantum wire. 66-8.112.134 Quarter wavelength layer. 294 Quarter wave phase shift. 151. 170 Quasi-phase matching CQPM). 43

R

Rapid thermal anneal ing CRTA) , 112 Rate equation. 152 Reactive ion beam etching (RIBE),

115-8, 338-9 Reactive ion etching CRIE), 113.118,

339, 370 Receiver, 28,191,263-5,333-5

array, 212-3,218-20,334-6 balanced. 264-5 cascode amplifier. 196-7.213,217-8 coherent. 223.265 f ron t -end, 197 hybrid, 194, 198.202.205.225-6 DE I C, 191-. 333-optical sensitivity, 196.213-5.

217-9.222.225 trans impedance amp Ii f i er. 197, 209,

213-4,217,220,224 WDM. 264

Recomb ina t ion, carrier lifetime, 147.152 base current in HBT, 162 nonrad i at i ve, 122

Redundancy of components, 429 Reflectance difference CRD) technique,

86

456

Reflect ion. 240 back reflection. 240

Reflection high-energy electron diffraction (RHEED). 78.116

intens i ty osc i llat ion in. 69 Reflectivity modulation (efficiency).

277 Reflectivity of DBR. 286 Reflectivi ty of materials. 242

laser facet. 245 Refractive index. 21.42.155.257.266 Re I axa t i on resonance frequency. 154 ReI iabi I i ty. (See also degradation).

6.376.378-9.426.429 Resistor. 195.208 Router. 265

self-routing in switching. 409-10 Rowland circle. 181

s Scattering effecL ion/electroa 133-4

electron in materials. 133 ion in materials. 134

Scattering matrix. 275 SchottkY barrier. 56.201.215-6.219-20.

327.329.338-9 Schrodinger' s equation. 31 Second harmonic generation (SHG). 39.

41 Secondary ion mass spectroscopy

(SIMS). 93 Selective area growth. 93-4.97

on patterned substrate. 94 Selective doping. 50.69-70 Selective epitaxy. 243.252 Selective etching. 114 Selective growth. 134.221 Self-aligned constricted mesa (SACM)

laser. 170. 178. 182 Self-electrooptic effect device

(SEED). 2.4.7.273-83.306-7.329. 361

symmetric (S-SEED). 281 Self-focusing. 391 SELFOC lens. 391

Self-scanning light-emitting device (SLED). 340

Semi-insulating (SI) substrate. 9 Separated amplification and

multiplication-APD (SAM-APD). 201

Shadow-masked growth. 99 Shot noise. 195.199 Side-mode suppression ratio. laser.

152. 179 Signal. 28 Signal to noise (S/N) ratio. 333 Si I icon. 376

anisotropic etching. 400 ICs. LSls. 2.9 optical bench/microbench. 399 platformlmotherboard/waferboard. 399 Si-based mono I i thic OEIC. 8 V-groove. 399

Si I icon nitride (SiN). 111. 380 Single-mode optical fiber. 384.390 Skin effect. 381 Smart pixel. 305.322.329.360-4.427.440 Solder-bump bonding. alignment. 350.

380.404 Solder ref low. 405 Spatial light modulator (SLM). 360.

363.365 SPICE simulation. 164 Spontaneous emission. 33-4.149.157 Spontaneous emission factor. 149.157 Spectrometer. monolithic. 264 Spectrum analyzer. monolithic. 6 Stimulated emission. (See also induced

emission). 146.152 Stoichiometry. film. 77 Strain. compressive/tensile. 64

effect on band structure. 65-6 effect on laser threshold. 87 critical layer thickness. 87

Strained layer. 64.84 Stress. cyclical. 380 Sub band. 37.67 Superlattice. 68 Surface contaminat ion. 121 Surface emitting laser. (See also

VCSEL), 361-5,365 Surface-emitting laser logic device

(CELL), 290 Surface mount technology (SMT) , 380 Surface-normal absorpt ion modulator,

274 Surface state, 120 Switching systems, 247

asynchronous transfer mode (ATM) , 308,331

Banyan tree network, 345 crossbar, 325, 330, 332, 345-6, 355 oPtical self-routing, 309 photonic, 5,308 reconfigurabl~ 308 synchronous transfer mode (STM) , 331

Switching energy in devices, 280,299, 303

Synchronous digital hierarchY (SDH), 143,436

Synchronous optical network (SDNET), 331

SDNET-ring architecture, 431,436 Synthesis of physical concept. 17,57

T

Tensile strai~ 65 Thermal conductivity, 380 Thermal expansion, coefficient of

(CTE) , 380,396 3-dB couple~ (See also Directional

coupler), 264 3-D optical integrated circuit. 311 III-V compound semiconductor, 3,9 Threshold current (density), 87,

145-6,148, 170,286,288 dependence on strain, 87

Threshold gain, 147,151-2,277. 286 Thresholding, 325,360 Thresho I d vo Itage, trans i s to~ 159-60 Time delay generator (TOG), 354,356 Time division multiplexing (TOM), 6,

144,247.255,321,325 optical COTDM) , 247

Time-sequential gain of SEER 281

457

Transconductance, trans i s to~ 158-9, 178,195-8,205,212,214,220,212

Trans impedance, amp Ii f i e~ 197, 209, 213-4,217,220,224

Transmission electron microscopy/ micrograph (TEM) , 93

Transmi t te~ 28 DEIC, 6,142-,338-42 multiwavelength/WDM, 180-2

Transparency, 424 of interface, 424 of format, 432,439

Transverse junction stripe (TJS) laser. 111. 173,339

Triangular barrier switc~ 291 Tunable laser, 255,259 2-D arra~ vertical devices, 2,311,427 Two-dimensional electron gas C2-DEG),

125,204-5,211 Two-dimensional electron gas FET

(TEGFET), (See a I so HEMT) , 203

u

UHV (in-si tu) process, 121. 125-6 Uncertainty relatio~ 29

v Vacuum lithography, 125 Vacuum shatt Ie/carr ier. 125 Vertical cavity surface emitting laser

(VCSEL), 273,285,361-3,365 quantum efficiency, 286

Vertical-to-surface transmission electro-photonic device (VSTEP), 273, 292

vertical-cavity (VC-VSTEP), 294 V-groove. Si, 399-403.407,413 VLSI, 7.329-30,368

w

Wave equat ion. 19 Wave function. 30,67 Waveguide. 25.233

458

effective refractive index. 150 evanescent light. 244 modulator. 342 MSM photodetector. integrated. 223 passive. 234 photodiode. integrated. 264-5 rib. 235. 355 ridge-guided laser. 339 slab. 236 SiD 2 /phosphosilicate glass. 356 switch network. 344 wave propagation in. 17

Wavelength constant. 21 Wavelength division multiplexing

(WOM). 6.150.218-22.255.262.308. 321. 325. 365. 427

grating demultiplexer. 193 multiwavelength laser array. 219 multiwavelength transmitter. 181-2 wavelength demultiplexer. 264 wavelength multiplexer. 262 wavelength router. 263

Wave vector. 20 Wide area network (WAN). 424.430

x X-ray diffraction. high-resolution.

91-2

y

Yield. fabrication. 21&219.225.426 Young' s modulus. 380

z Zn-diffusion. 199.213.215.222-3