studies on the suitability of inn for thz plasmonics...studies on the suitability of indium nitride...
TRANSCRIPT
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Studies on the Suitability of Indium
Nitride for Terahertz Plasmonics
Authors:
Arjun Shetty1, Prof. K. J. Vinoy1, Prof. S. B. Krupanidhi2
1Electrical Communication Engineering, Indian Institute
of Science, Bangalore, India 2Materials Research Centre, Indian Institute of Science,
Bangalore, India
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Outline
• Fundamentals – Plasmonics: Origin – Electromagnetics of metals – Negative permittivity – Surface plasmon coupling
• Why THz? – Applications
• Why InN? – Permittivities of Au and InN at THz
• Simulation results – Structure and Boundary Conditions – Electric field plots
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Free electron model of metals
Fixed +vely charged atomic core
Electrons free to move about
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Behaviour under applied electric field
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Plasma Frequency Material Plasma
Frequency Wavelength
Gold (Au) 2.18 x 1015Hz 200nm
Silver (Ag) 2.28 x 1015Hz 180nm
Aluminium (Al) 3.57 x 1015Hz 80nm
Indium Antimonide (InSb) 6.37 x 1012Hz 47µm
Indium Nitride (InN) 52 x 1012Hz 6µm
Ref: H. Ahn ; C.-L. Pan ; S. Gwo; “Terahertz emission and spectroscopy on InN epilayer and nanostructure”, Proc.
SPIE 7216, Gallium Nitride Materials and Devices IV, 72160T (February 16, 2009) 3rd November, 2012 5
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Local and Surface Plasmons
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Plasmonics
Ref: Barnes, W. L., Dereux, A. & Ebbesen, T. W. “Surface plasmon subwavelength optics" Nature 424, 824–-830 (2003).
•Performance enhancement enhanced E-field at metal dielectric interface due to surface plasmon wave
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Grating Coupling
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Why THz? - Applications
• Imaging
– Medical diagnostics, skin cancer, dental imaging (non-ionising alternative to x-rays)
• Sensing – Molecules have signature spectra in THz. Eg, Explosives, drugs
• Biomedical – Biological molecules have signature spectra in THz. Label free detection.
• Semiconductor – Materials evaluation, studying semiconductor wafers and ICs for defects. THz
technology will receive a boost if it can be developed for use in semiconductor industry
* Ref: F. Sizov, A. Rogalski, THz detectors, Progress in Quantum Electronics, Volume 34, Issue 5, September 2010, Pages 278-347 (2010)
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Why InN?
Au InN
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Simulation Results - Structure
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Au or InN
Air
Port
Scattering
Floquet
periodicity
Floquet
periodicity
0.4μm 0.2μm 0.2μm
50 nm
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Simulation Results – Electric Field
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Au InN
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Simulation Results – Horizontal Cutline
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Simulation Results – Horizontal Cutline
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Simulation Results – Vertical Cutline
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Simulation Results – Vertical Cutline
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Conclusions
• InN has values of permittivity that are better suited for plasmonics in the THz regime
• Greater field enhancement (upto 1.4 times) in case of InN as compared to Au
• Tighter confinement of field to interface
• Greater flexibility of ωp in case of semiconductors
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