structure and operation of the mosfet 24 and 26 march 2014
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Structure and Operation of the MOSFET 24 and 26 March 2014. FET Circa 1964-Commercial Introduction First FET IC Circa 1964 By RCA. Metal layer. + + + + + + + + + + + + +. Oxide layer. +. n-type inversion layer. - - - - - - - - - - - -. - PowerPoint PPT PresentationTRANSCRIPT
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Structure and Operation of the MOSFET24 and 26 March 2014
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FET Circa 1964-Commercial Introduction First FET IC Circa 1964 By RCA
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MOS Inversion Layer
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- - - - - - - - - - - - +
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Metal layer
Oxide layer
P-type
+ + + + + + + + + + + + +
n-type inversion layer
With large positive gate bias, there will be electrons at the interface between the oxide and semiconductor, which leads to formation of a thin n-type inversion layer
Threshold voltage VT: applied gate voltage required to achieve the threshold inversion
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Voltage-Current Relationship of NMOS (1)
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Voltage-Current Relationship of NMOS (1)
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