stgw40h120df2, stgwa40h120df2 - stmicroelectronics · 2021. 3. 23. · 40 2 3 v ge=15v 60 9v 11v 7v...

June 2016 DocID023753 Rev 5 1/17

This is information on a product in full production. www.st.com

STGW40H120DF2, STGWA40H120DF2

Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

Datasheet - production data

Figure 1: Internal schematic diagram

Features Maximum junction temperature: TJ = 175 °C

High speed switching series

Minimized tail current

VCE(sat) = 2.1 V (typ.) @ IC = 40 A

5 μs minimum short circuit withstand time at TJ=150 °C

Safe paralleling

Very fast recovery antiparallel diode

Low thermal resistance

Applications Uninterruptible power supply

Welding machines

Photovoltaic inverters

Power factor correction

High frequency converters

Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Table 1: Device summary

Order code Marking Package Packaging

STGW40H120DF2 G40H120DF2 TO-247 Tube

STGWA40H120DF2 G40H120DF2 TO-247 long leads Tube

Contents STGW40H120DF2, STGWA40H120DF2

2/17 DocID023753 Rev 5

Contents

1 Electrical ratings ............................................................................. 3

2 Electrical characteristics ................................................................ 4

2.1 Electrical characteristics (curves) ...................................................... 6

3 Test circuits ................................................................................... 11

4 Package information ..................................................................... 12

4.1 TO-247 package information ........................................................... 12

4.2 TO-247 long leads package information ......................................... 14

5 Revision history ............................................................................ 16

STGW40H120DF2, STGWA40H120DF2 Electrical ratings

DocID023753 Rev 5 3/17

1 Electrical ratings Table 2: Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0) 1200 V

IC Continuous collector current at TC = 25 °C 80 A

IC Continuous collector current at TC = 100 °C 40 A

ICP(1) Pulsed collector current 160 A

VGE Gate-emitter voltage ±20 V

VGE Transient gate-emitter voltage (tp ≤ 10 μs, D ≤ 0.01) ±30 V

IF Continuous forward current at TC = 25 °C 80 A

IF Continuous forward current at TC = 100 °C 40 A

IFP(1) Pulsed forward current 160 A

PTOT Total dissipation at TC = 25 °C 468 W

TSTG Storage temperature range -55 to 150 °C

TJ Operating junction temperature range -55 to 175 °C

Notes:

(1)Pulse width limited by maximum junction temperature.

Table 3: Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance junction-case IGBT 0.32 °C/W

RthJC Thermal resistance junction-case diode 1.3 °C/W

RthJA Thermal resistance junction-ambient 50 °C/W

Electrical characteristics STGW40H120DF2, STGWA40H120DF2

4/17 DocID023753 Rev 5

2 Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4: Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CES Collector-emitter breakdown

voltage VGE = 0 V, IC = 2 mA 1200

V

VCE(sat) Collector-emitter saturation

voltage

VGE = 15 V, IC = 40 A

2.1 2.6

V

VGE = 15 V, IC = 40 A,

TJ = 125 °C 2.4

VGE = 15 V, IC = 40 A,

TJ = 175 °C 2.5

VF Forward on-voltage

IF = 40 A

3.9 4.9

V IF = 40 A, TJ = 125 °C

3.05

IF = 40 A, TJ = 175 °C

2.8

VGE(th) Gate threshold voltage VCE = VGE, IC = 2 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 1200 V

25 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V

±250 nA

Table 5: Dynamic characteristics


Cies Input capacitance

VCE= 25 V, f = 1 MHz,

VGE = 0 V

- 3200 -

pF Coes Output capacitance - 220 -

Cres Reverse transfer

capacitance - 80 -

Qg Total gate charge VCC = 960 V, IC = 40 A, VGE = 15 V (see Figure 30: " Gate charge test circuit")

- 158 -

nC Qge Gate-emitter charge - 17 -

Qgc Gate-collector charge - 85 -

STGW40H120DF2, STGWA40H120DF2 Electrical characteristics

DocID023753 Rev 5 5/17

Table 6: IGBT switching characteristics (inductive load)


td(on) Turn-on delay time

VCE = 600 V, IC = 40 A,

VGE = 15 V, RG = 10 Ω

(see Figure 31: " Switching

waveform")

18 - ns

tr Current rise time

37 - ns

(di/dt)on Turn-on current slope

1755 - A/µs

td(off) Turn-off-delay time

152 - ns

tf Current fall time

83 - ns

Eon(1) Turn-on switching energy

1 - mJ

Eoff(2) Turn-off switching energy

1.32 - mJ

Ets Total switching energy

2.32 - mJ

td(on) Turn-on delay time

VCE = 600 V, IC = 40 A,

VGE = 15 V, RG = 10 Ω

TJ = 175 °C


waveform" )

36 - ns

tr Current rise time

20 - ns

(di/dt)on Turn-on current slope

1580 - A/µs

td(off) Turn-off-delay time

161 - ns

tf Current fall time

190 - ns

Eon(1) Turn-on switching energy

1.81 - mJ

Eoff(2) Turn-off switching energy

2.46 - mJ

Ets Total switching energy

4.27 - mJ

tsc Short-circuit withstand time VCC = 600 V, VGE = 15 V,

TJstart = 150 °C 5

- µs

Notes:

(1)Including the reverse recovery of the diode. (2)Including the tail of the collector current.

Table 7: Diode switching characteristics (inductive load)


trr Reverse recovery time

IF = 40 A, VR = 600 V,

VGE = 15 V


waveform") di/dt = 500 A/µs

- 488

ns

Qrr Reverse recovery charge - 2.59

µC

Irrm Reverse recovery current - 11.6

A

dIrr/dt Peak rate of fall of reverse

recovery current during tb - 406

A/µs

Err Reverse recovery energy - 0.38

mJ

trr Reverse recovery time

IF = 40 A, VR = 600 V,

VGE = 15 V TJ = 175 °C


waveform") di/dt = 500 A/µs

- 484

ns

Qrr Reverse recovery charge - 4.5

µC

Irrm Reverse recovery current - 18.6

A

dIrr/dt Peak rate of fall of reverse

recovery current during tb - 170

A/µs

Err Reverse recovery energy - 0.94

mJ


6/17 DocID023753 Rev 5

2.2 Electrical characteristics (curves)

Figure 2: Power dissipation vs. case temperature

Figure 3: Collector current vs. case temperature

Figure 4: Output characteristics (TJ = 25 °C)

Figure 5: Output characteristics (TJ = 175 °C)

Figure 6: VCE(sat) vs. junction temperature

Figure 7: VCE(sat) vs. collector current

Ptot

150

100

50

00 25 TC(°C)

(W)

100

200

50 75

250

175125 150

300

350

400

450VGE ≥ 15V, TJ °C≤ 175

GIPG130320141053FSRIC

20

10

00 TC(°C)

(A)

100

30

50

VGE ≥ 15V, TJ ≤ 175 °C

150

50

40

60

70

80

GIPG130320141109FSR

IC

20

00 1 VCE(V)

(A)

4

40

2 3

VGE=15V

60

9V

11V

7V

13V

5

80

100

120

140


20

00 1 VCE(V)

(A)

4

40

2 3

VGE=15V

609V

11V

7V

13V

5

80

100

120

140

GIPG130320141127FSR

VCE(sat)

3.0

2.6

2.2

1.8

-50 TJ(°C)

(V)

100

3.4

0 50 150

VGE= 15VIC= 80A

IC= 40A

IC= 20A

1.4

GIPG130320141146FSRVCE(sat)

3.4

2.6

1.8

0 IC(A)

(V)

4.2

30

5.0

1.0

VGE= 15V

TJ= - 40°C

TJ= 25°C

TJ= 175°C

60 90 120 150

GIPG190320151413RV


DocID023753 Rev 5 7/17

Figure 8: Collector current vs. switching frequency

Figure 9: Forward bias safe operating area

Figure 10: Transfer characteristics

Figure 11: Diode VF vs. forward current

Figure 12: Normalized VGE(th) vs. junction temperature

Figure 13: Normalized V(BR)CES vs. junction temperature

0

20

40

60

80

1 10

Ic [A]

f [kHz]

G Ωrectangular current shape,

(dutycycle=0.5, VCC = 600V, R =10 ,VGE =0/15 V, TJ =175°C)

Tc=80° C

Tc=100 °C

100

120


10

1

0.11 VCE(V)

(A)

10

10 µs

100 µs

1 msSingle pulse

Tc= 25°C, TJ<= 175°C

VGE= 15V

100

100

1000

1 µs

GIPG130320141339FSR

TJ=175°C

TJ=25°C

7 VGE(V)119

IC

60

40

20

05

(A)

80

100

120

140 VCE=10V

GIPG130320141348FSR

VGE(th)

1.1

1.0

0.6-50 TJ(°C)

(norm)

0 50 100 150

IC= 2mA

VCE= VGE

0.7

0.8

0.9

GIPG130320141400FSRV(BR)CES

0.98

0.94

0.9-50 TJ(°C)

(norm)

0 50 100 150

IC= 2mA

1.06

1.02

GIPG130320141405FSR


8/17 DocID023753 Rev 5

Figure 14: Capacitance variations

Figure 15: Gate charge vs. gate-emitter voltage

Figure 16: Switching energy vs. collector current

Figure 17: Switching energy vs. gate resistance

Figure 18: Switching energy vs. temperature

Figure 19: Switching energy vs. collector emitter voltage

Cies

f=1 MHz,VGE=0V

Coes

Cres

C

10

VCE(V)

(pF)

0.1 1 10

100

1000

100

GIPG190320151507RV

VCC

IC

40A

IG

1mA

6

3

00 Qg(nC)30 60 90

15

9

VGE

(V)

120 150

12

GIPG200320151700RV

E

0IC(A)

(µJ)

0 20 40

1000

60 80

2000

EON

3000

VCC = 600V, VGE = 15V,

RG = 10Ω, TJ = 175°C

EOFF

4000

5000

GIPG130320141432FSRE

0RG(Ω)

(µJ)

0 10 20

500

1000

1500

30 40

2000

EOFF

VCC = 600 V, VGE = 15 V,

IC = 40 A, TJ = 175 °C

EON

2500

3000

3500

4000

GIPG130320141439FSR

E

900TJ(°C)

(µJ)

0 50

1100

1300

1500

100 150

EOFF

VCC= 600V, VGE= 15V,

RG= 10Ω, IC= 40A

EON

1700

1900

2100

2300

2500

GIPG130320141450FSRE

200VCE(V)

(µJ)

200 600

800

1400

2000

EOFF

TJ= 175°C, VGE= 15V,

RG= 10Ω, IC= 40A

2600

3200

EON

400 800

GIPG130320141459FSR


DocID023753 Rev 5 9/17

Figure 20: Short-circuit time and current vs. VGE

Figure 21: Switching times vs. collector current

Figure 22: Switching times vs. gate resistance

Figure 23: Reverse recovery current vs. diode current slope

Figure 24: Reverse recovery time vs. diode current slope

Figure 25: Reverse recovery charge vs. diode current slope

30

(µs)

tSC ISCVCC ≤ 600 VTJ ≤ 150 °C

(A)

14

1010 VGE(V)11 12 13

26

tsc

14

18

22

80

320

200

260

140

IscGIPG190320151623RV

t

IC(A)

(ns)

0 20 40

10

60

tf

TJ= 175°C, VGE= 15V,

RG= 10Ω, VCC= 600V

tdoff100

80

tdon

tr

1

GIPG140320141159FSR

RG(Ω)0 10 20 30

tf

TJ= 175°C, VGE= 15V,

IC= 40A, VCC= 600V

40

tdoff

tr

tdon

t(ns)

10

100

1

GIPG140320141205FSR Irm

0di/dt(A/µs)

(A)

0 400 800

10

1200

IF = 40A, VCC = 600V,

VGE = 15V

1600

15

=175°C20

5

TJ

25

30

GIPG140320141215FSR

trr

0di/dt(A/µs)

(ns)

0 400 800

400

1200

IF = 40A, VCC = 600V,

VGE = 15V

1600

600

=175°C

800

200

TJ

1000

1200

1400

GIPG140320141222FSRQrr

3000di/dt(A/µs)

(nC)

0 400 800

4500

1200

IF = 40A, VCC = 600V,

VGE = 15V

1600

5000

=175°C4000 TJ

3500

5500

6000

GIPG140320141238FSR


10/17 DocID023753 Rev 5

Err

400di/dt(A/µs)

(µJ)

0 400 800

1000

1200

IF = 40A, VCC = 600V,

VGE = 15V

1600

1400

=175°C600

TJ

800

1200

GIPG140320141247FSR

Figure 26: Reverse recovery energy vs. diode current slope

Figure 27: Thermal impedance for IGBT

Figure 28: Thermal impedance for diode

STGW40H120DF2, STGWA40H120DF2 Test circuits

DocID023753 Rev 5 11/17

3 Test circuits Figure 29: Test circuit for inductive load

switching

Figure 30: Gate charge test circuit

Figure 31: Switching waveform

Figure 32: Diode reverse recovery waveform

A AC

E

G

B

RG+

-

G

C 3.3µF

1000µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1AM01505v1

Vi≤ V

GMAX

PW

IG=CONST

VCC

12 V 47 kΩ1 kΩ

100 Ω

2.7 kΩ

47 kΩ

1 kΩ

2200

µF

D.U.T.

100 nF

VG

Package information STGW40H120DF2, STGWA40H120DF2

12/17 DocID023753 Rev 5

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 TO-247 package information

Figure 33: TO-247 package outline

STGW40H120DF2, STGWA40H120DF2 Package information

DocID023753 Rev 5 13/17

Table 8: TO-247 package mechanical data

Dim. mm

Min. Typ. Max.

A 4.85

5.15

A1 2.20

2.60

b 1.0

1.40

b1 2.0

2.40

b2 3.0

3.40

c 0.40

0.80

D 19.85

20.15

E 15.45

15.75

e 5.30 5.45 5.60

L 14.20

14.80

L1 3.70

4.30

L2

18.50

ØP 3.55

3.65

ØR 4.50

5.50

S 5.30 5.50 5.70

Package information STGW40H120DF2, STGWA40H120DF2

14/17 DocID023753 Rev 5

4.2 TO-247 long leads package information

Figure 34: TO-247 long lead package outline

STGW40H120DF2, STGWA40H120DF2 Package information

DocID023753 Rev 5 15/17

Table 9: TO-247 long lead package mechanical data

Dim. mm

Min. Typ. Max.

A 4.90 5.00 5.10

A1 2.31 2.41 2.51

A2 1.90 2.00 2.10

b 1.16

1.26

b2

3.25

b3

2.25

c 0.59

0.66

D 20.90 21.00 21.10

E 15.70 15.80 15.90

E2 4.90 5.00 5.10

E3 2.40 2.50 2.60

e 5.34 5.44 5.54

L 19.80 19.92 20.10

L1

4.30

P 3.50 3.60 3.70

Q 5.60

6.00

S 6.05 6.15 6.25

Revision history STGW40H120DF2, STGWA40H120DF2

16/17 DocID023753 Rev 5

5 Revision history Table 10: Document revision history

Date Revision Changes

03-Oct-2012 1 First release.

29-Jan-2014 2

Updated features in cover page.

Updated Table 4: Static characteristics, Table 5: Dynamic

characteristics and Table 7: Diode switching characteristics (inductive

load).

Minor text changes.

24-Mar-2014 3

Updated title and description in cover page.

Updated Table 4: Static characteristics, Table 5: Dynamic

characteristics and Table 7: Diode switching characteristics (inductive

load).

Added Section 2.1: Electrical characteristics (curves).

31-Mar-2015 4

Added device in TO-247 long leads.

Updated 4: Package information.

Updated Figure 7, Figure 11, Figure 14, Figure 15, Figure 20, Figure 21

and added Figure 26.

Minor text changes.

28-Jun-2016 5

Modified: Table 2: "Absolute maximum ratings", Section 2: "Electrical

characteristics", Table 6: "IGBT switching characteristics (inductive

load)"

Minor text changes.

STGW40H120DF2, STGWA40H120DF2

DocID023753 Rev 5 17/17

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