status on cmos sensors: 2005 outcome a. besson, on behalf of iphc/ires strasbourg dapnia saclay (m8,...
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Status on CMOS Sensors: 2005 outcomeStatus on CMOS Sensors: 2005 outcome
A. Besson, on behalf of
IPHC/IReS Strasbourg DAPNIA Saclay (M8, M15)
LPSC Grenoble (ADC)LPC Clermont (ADC)
Univ. Frankfurt (M11)
• Fast integrated signal processing• Operation @ room Temp.• Thinning• Exploration of fabrication processes • Delayed signal processing • EUDET
SOCLE, Lyon, 12-13 janvier 2006SOCLE, Lyon, 12-13 janvier 2006
Socle, Lyon, 12-13 janvier 2006 Auguste Besson 2
Specific aspects of the CMOS VD Specific aspects of the CMOS VD conceptconcept
• Overall design a priori very similar to TESLA TDR concept (CCD):
• Basic characteristics:
• Main R&D effort
5 cylindrical layers R = 15 – 60 mm surface ~ 3000 cm2
sensor thickness ~ 25-50 m total number of pixels ~ 300 millions Pmean ~≤ 25 W (full detector; 1/20 duty cycle) operated T > 5o ?
pixelsADC, sparsification
support
Layer
Pitch tr.o. Nlad Npix Pinstdiss Pmean
dis
L1 20 m 25 s 20 25M < 100 W
< 5 W
L2 25 m 50 s 26 65M < 130 W
< 7 W
L3 30 m 200 s 24 75M < 100 W
< 5 W
L4 35 m 200 s 32 70M < 110 W
< 6 W
L5 40 m 200 s 40 70M < 125 W
< 6 W
total 142
305M
< 565 W
<29 W
concentrated on achieving fast CMOS sensors: signal processing (sparsification) integrated/chip
Socle, Lyon, 12-13 janvier 2006 Auguste Besson 3
Status of the main R&D directionsStatus of the main R&D directions
• Fast read-out in L1/L2 with // processing of columns– Mimosa 8 (with Saclay) characterized in test beam.
– Mimosa 15 (M8 pixel in AMS 0.35 opto) tested in lab.
• Multi-memory architecture (FAPS) in L3-L5– Mimosa 12 tested in lab.
• Radiation hardness (Ionising damage) @ high TºC– Mimosa 11 characterized in test beam.
irradiated with 10 keV X-Rays up to 1 MRad.
• other on going activities– Fabrication processes
– ADC
– Thinning
– Mimostar-2
// read-out architecture// read-out architecture
Socle, Lyon, 12-13 janvier 2006 Auguste Besson 5
// read-out architecture: Mimosa 8// read-out architecture: Mimosa 8
• Mimosa 8:• Test in lab: 55Fe results
– Pixel noise ~ 15 e-– CDS ending each col. Pixel-to-pixel dispersion ~ 8 e-
• Test beam results (DESY, 5GeV e-)
– Analog part Charge ~ 450 e- thin epi layer Typical noise ~ 12-15 e- S/N (MPV) ~ 8.5 - 9.5
– Digital part The discriminator works as expected:
efficiency / purity / multiplicity
Next step: ADC, rad. hardness, AMS 0.35 OPTO, speed
- TSMC 0.25 m fab. process with ~ 8 m epitaxial layer- Pixel pitch: 25 m- 3 sub matrices with 3 diode surfaces
- 1.2 x 1.2 μm2
- 1.7 x 1.7 μm2
- 2.4 x 2.4 μm2
- 24 // columns of 128 pixels with 1 discriminator per column- 8 analogic columns
Socle, Lyon, 12-13 janvier 2006 Auguste Besson 6
M8 digital : Efficiency and fake M8 digital : Efficiency and fake raterate
Temp. = 20oC; r.o. = 40 MHz
S/N(seed) cut > 5.5 ( discri. threshold =5 mV)Contamination ~< 5 x 10-5
Fake Hit rate / pixel / event
First sensor with integrated signal digitisation !Architecture to be extended with ADC for EUDET telescope
Average hit multiplicity (num of pixels in cluster)
Efficiency (%)
Socle, Lyon, 12-13 janvier 2006 Auguste Besson 7
Mimosa 15: translation in AMS 0.35 Mimosa 15: translation in AMS 0.35 optoopto
• TSMC – 0.25 technology < 7 μm epitaxial layer thickness: signal ~ 450 e-
while AMS-0.35 opto techno ~< 12 μm thickness: signal ~ 700-800 e-
Translate Mimosa 8 in AMS-0.35 opto techno.
• First step: Mimosa 15 (fab. in Summer 2005) Pixel with integrated CDS design of Mimosa 8 2 diode sizes: 1.7 x 1.7 μm2 & 2.4 x 2.4 μm2
Lab. tests in December-January
Socle, Lyon, 12-13 janvier 2006 Auguste Besson 8
Mimosa 15: tests with Mimosa 15: tests with 5555Fe sourceFe source• 2.4 x 2.4 μm2 diode:
– Gain ~ 50 μV/e-
– Qseed ~ 10% of Qtot (instead of ~ 25%)
– Q3x3 ~ 30% of Qtot (instead of ~ 70%)
– Noise ~< 10 e- ENC Gain & Noise very close to Mimosa 8 ready for full translation of
Mimosa 8 But: less signal charge collected adapt sensing diode size
Calibration peak
Cluster seed
Charge (electrons) Noise (electrons)
Mean ~ 8.3 e-
2.4 x 2.4 μm2
T = 20 oC25 MHz
Multi-memory architectureMulti-memory architecture
Socle, Lyon, 12-13 janvier 2006 Auguste Besson 10
Multi-memory architecture (1)Multi-memory architecture (1)
• Mimosa 12 (MOSAIC-1)– Layers 3-5. (& layer 2 ?)– Prototype exploring various types & dimensions of
memory cells AMS-0.35 m techno 4 capacitors/pixel (35 m pitch) 6 sub-arrays with various MOS capa.: 50, 100,
200 fF
Aim for minimal size capacitors providing satisfactory precision, depending on pitch - i.e. layer - (~ 4.6 fF/m2)
Minimal size of capacitor: ~ 50 fF (see also CAP for BELLE)
Cap : 100 fF
Cap : 200 fF
Cap : 50 fF
AC : Poly - Poly
AC : Nwell - Poly
Clamping
Socle, Lyon, 12-13 janvier 2006 Auguste Besson 11
Multi-memory architecture (2)Multi-memory architecture (2)
• 4 capacitors / pixel– Calibration peak with 55Fe
With sampling and read-out With direct read-out
Calibration peak
312
290
310
274
313
24177,0%
100,0%
88,4%
100,0%
92,9%
100,0%
0 50 100 150 200 250 300 350
Mode sanséchantillonnage
Pixel Standard
Mode sanséchantillonnage
Pixel Standard
Mode sanséchantillonnage
Pixel Standard
20
0fF
10
0fF
50
fF
UADC
Standard pixelWithout sampling
Standard pixelWithout sampling
Standard pixelWithout sampling
50 fF
100 fF
200 fF
Vdd_diode
Vdda
VcascAm p
Pow erOnAm pVdda
Read
Vdda
Vac
Sw itchM em
PrechM em
VrefM em
S<0> S<1> S<2> S<3>
tint ~ 230 μs ~ O(1 ms)
Storage duration is critical
Radiation hardnessRadiation hardness
Socle, Lyon, 12-13 janvier 2006 Auguste Besson 13
Radiation hardness (1)Radiation hardness (1)
• Mimosa 11: structures– AMS 0.35 μm opto.– 8 different sub-matrices Standard rad tol: thin oxyde and guard ring
Minimize leakage current
• Mimosa 11: test beam – DESY, 5 GeV e-– T = 40 oC ; 700 μs (2.5 MHz)– S/N (MPV) ~ 24– Eff = 99,9 0.05 %
N-Wellp+
SBSF
P-Well
P-epi
n+p+ p+
Standard (A0 sub 2)
N-Well
PartiallyP+ doped
p+
SBSF P+ polyfilling
P+ polyfilling
P-Well
P-epi
n+ n+p+ p+
PartiallyP+ doped
Rad hard (A3 sub 1)
Socle, Lyon, 12-13 janvier 2006 Auguste Besson 14
Mimosa 11Mimosa 11
-25 °C 10°C 40 °C
0kR
ad10 keV X-ray Temperature
500k
Rad(with S. Amar-Youcef, C. Müntz, J. Stroth. Frankfurt)(with S. Amar-Youcef, C. Müntz, J. Stroth. Frankfurt)
Integration time (ms)Integration time (ms)
NoiseNoise (e-) (e-)Standard structureStandard structure
Rad hard structureRad hard structure
200 200 μμss
50 100 150 200 250 300
0.2
0.4
0.6
0.8
1
Standard structureStandard structure Rad hard structureRad hard structure
4-pixel cluster: 55Fe spectrum before (red) and after (green) 1 Mrad of X-rays @40°C (200 µs integ. time)
50 100 150 200 250 300
0.2
0.4
0.6
0.8
1
Other on-going activitiesOther on-going activities
Socle, Lyon, 12-13 janvier 2006 Auguste Besson 16
Other on-going activitiesOther on-going activities
• Fabrication process exploration– AMS 0.35 μm opto :
Excellent performances (M9, M11, M14) Epi. Layer ~ 12 μm S/N ~ 20-30 (MPV) det ~ 99-99.9 % ; sp = 1.5-2.5 m (20 m pitch) Will be used for EUDET
– TSMC 0.25 μm Typical cluster charge for MIP ~ 450 e- Epi. Layer ~ 6.5 μm
• ADC – LPC-Clermont : full flash ADC proto. fab. in Automn 2005– LPSC-Grenoble : semi-flash ADC proto. subm. in Dec 2005– IPHC/IReS: Wilkinson double ramp (4.5 bits)– DAPNIA & IReS: Succ. approx. 4 & 5 bits.
• Thinning (Mimosa-5)– TRACIT company:
Thinning at 50 μm successful (mech.) electrical tests foreseen On going tests to thin down to 40 μm
Socle, Lyon, 12-13 janvier 2006 Auguste Besson 17
MimoSTAR 2MimoSTAR 2
• MimoSTAR-2– AMS 0.35 μm OPTO. 30 μm pitch – 2 matrices 64 x 128, JTAG architecture– Rad. hard structure (based on Mimosa 11)
• To be installed in STAR (2006) Ionising radiation tolerant pixel validated at temperature up to + 40 oC No active cooling needed at int. time ~< O(1 ms)
• Prototype of a EUDET telescope demonstrator chip
Test-beam results (DESY, 5 GeV e-) 2 r.o. time (2 and 10 MHz) 800 μs and 4 ms
(preliminary)(preliminary)
Efficiency vs Temp S/N (MPV) vs Temp
Socle, Lyon, 12-13 janvier 2006 Auguste Besson 18
Summary and OutlookSummary and Outlook
• M8: first prototype with discri (TSMC 0.25) Very good m.i.p detection performances implement ADC Signal charge assessed: ~ 450 e- only (AMS 0.35 opto: > 700 e-)
• M15: M8 pixel (with CDS) also validated in AMS 0.35 opto
• M11: rad. tol. pixel @ room To up to 1MRad (if tint ~< 1 ms)
• M12: >~ 50 fF capacitors seem mandatory Not suited to inner most layer but perhaps to 2nd layer
• ADC: study of several alternative architectures @ IReS, LPSC, LPCC, DAPNIA
• Thinning below 50 μm has started
• EUDET: Telescope of 5-7 planes of MIMOSA sensors with digital output and
integrated zero suppression (M8/M15++) MimoSTAR 2 tested with m.i.p.s demonstrator in 2007
Socle, Lyon, 12-13 janvier 2006 Auguste Besson 19
Liste des personnelsListe des personnels
IPHC/IReS: J.Baudot, A.B., G. Claus, C. Colledani, (G. Deptuch), M. Deveaux, A.
Dorokhov,
W. Dulinski, M. Goffe, D. Grandjean, F. Guilloux, S. Heini, A. Himmi, Ch. Hu, K.
Jaaskelainen,
M. Pellicioli, O.Robert, A. Shabetai, M. Szelezniak, I. Valin, M. Winter
DAPNIA: M. Besançon, Y. Degerli, N. Fourches, Y. Li, P. Lutz, F. Orsini
LPSC: D.Dzahini, M.Dahoumane, H.Ghazlane, J.Y.Hostachy, E.Lagorio, O.Rossetto,
D.Tourres
LPCC: B.Bohner, R.Cornat, P.Gay, J.Lecoq, L.Royer
(Univ. Frankfurt: S. Amar-Youcef)
Socle, Lyon, 12-13 janvier 2006 Auguste Besson 20
Mimosa 11Mimosa 11
-25 °C 10°C 40 °C
0kR
ad20
kRad
10 keV X-ray Temperature
500k
Rad
1000
kRad
(with S. Amar-Youcef, C. Müntz, J. Stroth. Frankfurt)
Integration time (ms)Integration time (ms)
Noise (e-)Noise (e-)
Standard structure
Rad hard structure
200 μs
Socle, Lyon, 12-13 janvier 2006 Auguste Besson 21
M8 digital : Hit multiplicityM8 digital : Hit multiplicity
Socle, Lyon, 12-13 janvier 2006 Auguste Besson 22
Multi-memory architecture (1)Multi-memory architecture (1)
• Diode « self-bias »• Couplage AC 50fF• Ampli. Nmos G~10• 4 capacités de
stockage• Ampli. Source Follower
• Diode « self-bias »• Couplage AC 50fF
– Poly-Poly– Nwell - Poly
• Ampli. Pmos G~7• 4 capacités de
stockage( Cap =200 fF)
• Ampli. Source Follower
• Diode « self-bias »
• Couplage AC 50fF
• Ampli. Nmos G~10
• 2 capacités de stockage « clamping » (CDS intégré)
• Ampli. Source Follower
Cap : 100 fF
Cap : 200 fF
Cap : 50 fF
AC : Poly - Poly
AC : Nwell - Poly
Clamping