status of the cbm tof tdc development

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EE- ASIC Status of the CBM ToF TDC Development Detector Requirements TDC Core & Testchip Performance Architecture & Readout Concept Status and Submission Plans

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Status of the CBM ToF TDC Development. Detector Requirements TDC Core & Testchip Performance Architecture & Readout Concept Status and Submission Plans. Detector Requirements. Time Resolution< 25 ps Double Hit Resolution< 10 ns (better < 5 ns) Time over ThresholdYes - PowerPoint PPT Presentation

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EE- ASIC

Status of the CBM ToF TDC Development

Detector Requirements TDC Core & Testchip Performance Architecture & Readout Concept Status and Submission Plans

EE- ASIC

Detector Requirements

• Time Resolution < 25 ps• Double Hit Resolution < 10 ns (better < 5 ns)• Time over Threshold Yes• Power Consumption < 60 mW / Ch• Integration Level min. 4 Ch / Chip

EE- ASIC

Status of the CBM ToF TDC Development

Detector Requirements TDC Core & Testchip Performance Architecture & Readout Concept Status and Submission Plans

EE- ASIC

Delay Locked LoopClosed regulation loop with a chain of N identical elements with adjustable delay, Phase Detector, Charge Pump and Loop Filter

+ Good resolution + Self calibration + Dead time free operation + Low power consumption

Reference Clock

N Delay Elements

Phasedetector

Charge Pump & Loop Filter

N Time Bins

DLL based TDC Core

EE- ASIC

DLL structure with 64 DE 160MHz clock input Intrinsic bin size: ~ 50ps Additional components:

Hit-Reg, RO-Logic 1 Bit serial output

Size: 1525µm x 1525µm

Testchip DANTE DLL

870µm 210µm

Delay Chain

Loop Filter

Ref Clk

Phase Detector Charge PumpChip submitted in Feb 2007

EE- ASIC

DANTE DoubleBin DLL

20 40 60 80 100 1200

500000

1000000

1500000

2000000

2500000 Modell: GaussGleichung: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2)

w 1.17816 ±0.0087corr. 28.76 ps ± 0.21ps

uncorr. 20.34 ps ± 0.15ps

Co

un

ts

# TimeBin

Power consumption DLL (Sim.) I = 3 mA @1.8V => 5.4 mW

Power consumption DANTE (Mea.) I = 18 mA @1.8V => 32.4 mW

Resolution σuc = 20.34 ps ± 0.15ps

DNL: (+ 0.34 / - 0.38) LSB INL: (+ 0.51 / - 0.49) LSB

DNL PLOT DANTE-DLL Vcore=1.8V, f=160MHz

-1,00

-0,80

-0,60

-0,40

-0,20

0,00

0,20

0,40

0,60

0,80

1,00

1 17 33 49 65 81 97 113

TIME BIN #

LS

B

+0.49 LSB -0.39 LSB

DNL =

EE- ASIC

Status of the CBM ToF TDC Development

Detector Requirements TDC Core & Testchip Performance Architecture & Readout Concept Status and Submission Plans

EE- ASIC

Architecture & Readout Concept

• 4 Channels with LVDS Input

• 2 Events / Clock Cycle → Double Hit Resolution: ≤ 3.1 ns

• Time over Threshold Measurement

• Serial Data Communication

EE- ASIC

Timing and Synchronisation

• CBM System Clock : 250 MHz ( TSys = 4 ns )

• DLL Clock: 156.25 MHz ( = 5/8 * 250 MHz )• Intrinsic Time Binning : 50 ps• 12 Bit Timestamp Counter

• TEpoche = 26.2144 µs

• For Synchronisation: 2048 * TSys = 5 * TEpoche

• Synchronisation Intervall : TSync = 131.072 µs

EE- ASIC

Readout Concept for TDC Chips

Readout structure exists in VHDL and is under test

TDC

Core

Clock

Fine Time 7bitTime Stamp 12bitChannel # 2bitL/F-Edge 1bitChip ID 8bitExtension 2bit

EE- ASIC

Status of the CBM ToF TDC Development

Detector Requirements TDC Core & Testchip Performance Architecture & Readout Concept Status and Submission Plans

EE- ASIC

Status and Submission Plans

• Schematic and Layout for Time Core• Parasitic Simulation still missing• Design of Readout Logic• Submission planed for summer 2008

EE- ASIC

Thank you for your attention