ssh6n90a

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Advanced Power MOSFET

FEATURES

TO-3P

1.Gate 2. Drain 3. Source

3

2

1

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current : 25 A (Max.) @ VDS= 900V

Low RDS(ON) : 1.829 (Typ.)

Absolute Maximum Ratings

Drain-to-Source Voltage

Continuous Drain Current (TC=25

C)

Continuous Drain Current (TC=100

C)

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (TC=25

C)

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8 from case for 5-seconds

Characteristic Value UnitsSymbol

IDM

VGS

EAS

IAR

EAR

dv/dt

ID

PD

TJ , TSTG

TL

A

V

mJ

A

mJ

V/ns

W

W/

C

A

C

VDSS V

O1

O1

O1

O2

O3

Thermal Resistance

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

R JC

R CS

R JA

C/W

Characteristic Max. UnitsSymbol Typ.

SSH6N90A

BVDSS = 900 V

RDS(on) = 2.3

ID = 6 A

900

6

3.8

24

667

6

20

1.5

200

1.59

- 55 to +150

300

0.63

--

40

--

0.24

--

30+_

1999 Fairchild Semiconductor Corporation

Rev. B

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N-CHANNEL

POWER MOSFET

Electrical Characteristics (TC=25

C unless otherwise specified)

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

Static Drain-Source

On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source ChargeGate-Drain(Miller ) Charge

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

QgsQgd

BVDSS

BV/TJ

VGS(th)

RDS(on)

IGSS

IDSS

V

V/

C

V

nA

A

pF

ns

nC

--

--

--

--

--

--

--

--

--

--

----

--

VGS=0V,ID=250A

ID=250A See Fig 7

VDS=5V,ID=250A

VGS=30V

VGS=-30V

VDS=900V

VDS=720V,TC=125

C

VGS

=10V,ID=3A *

VDS=50V,ID=3A

VDD=450V,ID=6A,

RG=11.5

See Fig 13

VDS=720V,VGS=10V,

ID=6ASee Fig 6 & Fig 12

Drain-to-Source Leakage Current

VGS=0V,VDS=25V,f =1MHz

See Fig 5

Source-Drain Diode Ratings and Characteristics

Continuous Source Current

Pulsed-Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

IS

ISM

VSD

trr

Qrr

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

--

--

--

--

--

A

V

ns

C

Integral reverse pn-diode

in the MOSFET

TJ=25

C,IS=6A,VGS=0V

TJ=25

C ,IF=6A

diF/dt=100A/s

O4

O4

O4 O5

O5O4

O4

O4O1

SSH6N90A

900

--

2.0

--

--

--

--

--

1.10

--

--

--

--

--

135

54

22

40

99

32

68

11.530.9

--

--

3.5

100

-100

25

250

2.3

--

2030

160

63

55

90

210

75

89

----

4.28

1560

--

--

--

580

7.34

6

24

1.4

--

--

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

L=35mH, IAS=6A, VDD=50V, RG=27, Starting TJ =25

C

ISD 6A, di/dt 140A/ s, VDD BVDSS , Starting TJ =25

C

Pulse Test : Pulse Width = 250 s, Duty Cycle 2%

Essentially Independent of Operating Temperature

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N-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

SSH6N90A

0.2 0.4 0.6 0.8 1.0 1.2 1.410-1

100

101

150oC

25oC

@ Notes :

1. VGS= 0 V

2. 250s Pulse TestIDR,

Reverse

Dra

in

Current

[A

]

VSD, Source-Drain Voltage [V]

100

101

0

500

1000

1500

2000

2500

Ciss= Cgs+ Cgd(Cds= shorted)

Coss= C

ds+ C

gd

Crss= Cgd

@ Notes :

1. VGS= 0 V

2. f = 1 MHz

Crss

C oss

C iss

Capaci

tance

[pF

]

VDS, Drain-Source Voltage [V]

2 4 6 8 1010-1

100

101

25 oC

150oC

- 55oC

@ Notes :

1. VGS= 0 V

2. VDS= 50 V

3. 250s Pulse Test

ID

,

Dra

in

Current

[A

]

VGS, Gate-Source Voltage [V]

0 5 10 15 200

2

4

6

@ Note : TJ= 25

oC

VGS= 20 V

VGS= 10 V

RDS

(on

),

[]

Dr

ain-Source

On-Res

istance

ID, Drain Current [A]

10-1

100

101

10-2

10-1

100

101

@ Notes :

1. 250s Pulse Test

2. TC= 25oC

VGS

Top : 15V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

ID

,

Dra

in

Current

[A

]


0 10 20 30 40 50 60 700

5

10

VDS= 720 V

VDS= 450 V

VDS= 180 V

@ Notes : ID= 6.0 AVGS

,

Gate-Source

Vo

ltage

[V

]

QG, Total Gate Charge [nC]

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N-CHANNEL

POWER MOSFET

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature

Fig 11. Thermal Response

Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area

PDM

t1

t2

SSH6N90A

-75 -50 -25 0 25 50 75 100 125 150 1750.8

0.9

1.0

1.1

1.2

@ Notes :

1. VGS= 0 V

2. ID= 250A

BVDSS

,

(Norma

lize

d)

Dra

in-Source

Brea

kdown

Vo

ltage

TJ, Junction Temperature [oC]

-75 -50 -25 0 25 50 75 100 125 150 1750.0

0.5

1.0

1.5

2.0

2.5

3.0

@ Notes :

1. VGS= 10 V

2. ID= 3.0 A

RDS

(on

)

,

(Norma

lize

d)

Dra

in-Source

On-Res

istance

TJ, Junction Temperature [oC]

101 102 10310-2

10

-1

100

101

102

100s

DC

10 s

1 ms

10 ms

@ Notes :

1. TC= 25oC

2. TJ= 150oC

3. Single Pulse

Operation in This Area

is Limited by RDS(on)

ID

,

Dra

in

Current

[A

]


25 50 75 100 125 1500

2

4

6

8

ID

,

Dra

in

Current

[A

]

Tc, Case Temperature [oC]

10- 5 10- 4 10- 3 10- 2 10- 1 100 101

10- 2

10- 1

100

single pulse

0.2

0.1

0.01

0.02

0.05

D=0.5

@ Notes :

1. ZJC

(t)=0.63oC/W Max.

2. Duty Factor, D=t1

/t2

3. TJM-T

C=P

DM*Z

J C(t)

ZJC

(t

)

,

The

rma

l

Response

t1, Square Wave Pulse Duration [sec]

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N-CHANNEL

POWER MOSFET

Fig 12. Gate Charge Test Circuit & Waveform

Fig 13. Resistive Switching Test Circuit & Waveforms

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

EAS = LL IAS2----

2

1--------------------

BVDSS-- VDD

BVDSS

Vin

Vout

10%

90%

td(on) tr

ton toff

td(off) tf

Charge

VGS

10V

Qg

Qgs Qgd

Vary tVary tpto obtain

required peak ID

10V

VDDC

LLVDS

ID

RG

tp

DUT

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

VDD( 0.5 rated VDS )

10V

Vout

Vin

RL

DUTRG

3mA

VGS

Current Sampling (IG)

Resistor

Current Sampling (ID)

Resistor

DUT

VDS

300nF

50K

200nF12V

Same Type

as DUT

* Current Regulator *

R1 R2

SSH6N90A

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N-CHANNEL

POWER MOSFET

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

--

L

IS

DriverVGS

RGSame Type

as DUT

VGS dv/dt controlled by RG

IScontrolled by Duty Factor D

VDD

10VVGS

( Driver )

IS

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

Vf

IFM, Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------

SSH6N90A

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TRADEMARKS

ACExCoolFET

CROSSVOLTE2CMOSTM

FACT

FACT Quiet Series

FAST

FASTr

GTOHiSeC

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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:

ISOPLANARMICROWIRE

POPPowerTrenchQS

Quiet SeriesSuperSOT-3

SuperSOT-6SuperSOT-8TinyLogic

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2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Formative orIn Design

First Production

Full Production

Not In Production

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.

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