sop 62 pitch 0.80 mm · 2020. 7. 2. · sop 62 -pitch 0.80 mm general description key features pin...

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3D PLUS reserves the right to cancel or change specifications without notice. 3DSD4G16VS8483 The 3D SD4G16VS8483 is a high-speed highly inte- grated Synchronous Dynamic Random Access Memory containing 4.294.967.296 bits. It is organized as eight banks of 512Mbit. Each bank has a 16-bit interface and is selected with specific #CS. All other signals are common to the eight 512Mbit SDRAM memories. Each memory in the bank is organized as 32Mx16-bit. It is particularity well suited for use in high reliability, high performance and high density system applications, such as solid state mass recorder, server or work- station. The 3D SD4G16VS8483 is packaged in a 62 pin SOP. Stack of eight 512Mbit SDRam. Organized as 256Mx16-bit. Single +3.3V power supply. Fully synchronous; all signals registered on positive edge of system clock. Internal pipelined operation; column address can be changed every clock cycle. Programmable burst length; 1, 2, 4, 8 or full page. Auto precharge includes concurrent auto precharge, and auto refresh modes. Self refresh modes. LVTTL-compatible inputs and outputs Available Temperature Range: 0°C to 70°C -40°C to+85°C Available with screening option for high reliability application (Space, etc…) SOP 62 - Pitch 0.80 mm GENERAL DESCRIPTION KEY FEATURES PIN ASSIGNMENT (top view) FUNCTIONAL BLOCK DIAGRAM 3DFP-0483 REV 3 — February 2020 All other signals are common to the eight memories. 1 #CS4 17 LDQM 33 #CS5 49 VDDQ 2 #CS3 18 #WE 34 VSS 50 DQ9 3 VDD 19 #CAS 35 A4 51 DQ10 4 DQ0 20 #RAS 36 A5 52 VSSQ 5 VDDQ 21 #CS0 37 A6 53 DQ11 6 DQ1 22 BA0 38 A7 54 DQ12 7 DQ2 23 BA1 39 A8 55 VDDQ 8 VSSQ 24 A10 40 A9 56 DQ13 9 DQ3 25 A0 41 A11 57 DQ14 10 DQ4 26 A1 42 A12 58 VSSQ 11 VDDQ 27 A2 43 CKE 59 DQ15 12 DQ5 28 A3 44 CLK 60 VSS 13 DQ6 29 VDD 45 UDQM 61 NC 14 VSSQ 30 #CS1 46 #CS7 62 NC 15 DQ7 31 #CS2 47 VSS 63 16 VDD 32 #CS6 48 DQ8 64 MEMORY MODULE 3Gbit SDRAM Organized as 128Mx32, based on 128Mx4 SDRAM

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Page 1: SOP 62 Pitch 0.80 mm · 2020. 7. 2. · SOP 62 -Pitch 0.80 mm GENERAL DESCRIPTION KEY FEATURES PIN ASSIGNMENT (top view) FUNCTIONAL BLOCK DIAGRAM 3DFP-0483 REV 3 — February 2020

3D PLUS reserves the right to cancel or change specifications without notice.

3DSD4G16VS8483

The 3D SD4G16VS8483 is a high-speed highly inte-

grated Synchronous Dynamic Random Access Memory

containing 4.294.967.296 bits.

It is organized as eight banks of 512Mbit.

Each bank has a 16-bit interface and is selected with

specific #CS. All other signals are common to the eight

512Mbit SDRAM memories.

Each memory in the bank is organized as 32Mx16-bit.

It is particularity well suited for use in high reliability,

high performance and high density system applications,

such as solid state mass recorder, server or work-

station.

The 3D SD4G16VS8483 is packaged in a 62 pin SOP.

Stack of eight 512Mbit SDRam.

Organized as 256Mx16-bit.

Single +3.3V power supply.

Fully synchronous; all signals registered on positive

edge of system clock.

Internal pipelined operation; column address can be

changed every clock cycle.

Programmable burst length; 1, 2, 4, 8 or full page.

Auto precharge includes concurrent auto

precharge, and auto refresh modes.

Self refresh modes.

LVTTL-compatible inputs and outputs

Available Temperature Range:

0°C to 70°C

-40°C to+85°C

Available with screening option for high reliability

application (Space, etc…)

SOP 62 - Pitch 0.80 mm

GENERAL DESCRIPTION

KEY FEATURES

PIN ASSIGNMENT (top view)

FUNCTIONAL BLOCK DIAGRAM

3DFP-0483 REV 3 — February 2020

All other signals are common to the eight memories.

1 #CS4 17 LDQM 33 #CS5 49 VDDQ

2 #CS3 18 #WE 34 VSS 50 DQ9

3 VDD 19 #CAS 35 A4 51 DQ10

4 DQ0 20 #RAS 36 A5 52 VSSQ

5 VDDQ 21 #CS0 37 A6 53 DQ11

6 DQ1 22 BA0 38 A7 54 DQ12

7 DQ2 23 BA1 39 A8 55 VDDQ

8 VSSQ 24 A10 40 A9 56 DQ13

9 DQ3 25 A0 41 A11 57 DQ14

10 DQ4 26 A1 42 A12 58 VSSQ

11 VDDQ 27 A2 43 CKE 59 DQ15

12 DQ5 28 A3 44 CLK 60 VSS

13 DQ6 29 VDD 45 UDQM 61 NC

14 VSSQ 30 #CS1 46 #CS7 62 NC

15 DQ7 31 #CS2 47 VSS 63

16 VDD 32 #CS6 48 DQ8 64

MEMORY MODULE

3Gbit SDRAM

Organized as 128Mx32, based on 128Mx4

SDRAM

Page 2: SOP 62 Pitch 0.80 mm · 2020. 7. 2. · SOP 62 -Pitch 0.80 mm GENERAL DESCRIPTION KEY FEATURES PIN ASSIGNMENT (top view) FUNCTIONAL BLOCK DIAGRAM 3DFP-0483 REV 3 — February 2020

3D PLUS reserves the right to cancel or change specifications without notice.

DC operating conditions and characteristics

PARAMETER SYMBOL MIN MAX UNIT

Supply voltage VDD 3.0 3.6 V

Input logic high voltage VIH 2.0 VDD +0.3 V

Input logic low voltage VIL -0.3 0.8

Output logic high voltage VOH 2.4 - V

Output logic low voltage VOL - 0.4 V

PARAMETER SYMBOL VALUE UNIT

Voltage on any pin relative to VSS VIN, VOUT -1.0 to

VDD +0.5 V

Storage temperature TSTG -65 ~ +150 °C

Power dissipation PD 2 W

Short circuit current ICS 50 mA

DC Characteristics

Absolute maximum ratings

PARAMETER SYMBOL VALUE UNIT

Operating Current (one bank active) IDD1 385 mA

ICC2P 32 mA Standby Current power down mode

ICC3P 251 mA Active

HEADQUARTERS (FRANCE) TECHNICAL CENTER (USA) DISTRIBUTOR

408 rue Hélène Boucher - ZI 78530 Buc

Tel: +33 (0)1 30 83 26 50 E-mail: [email protected]

www.3d-plus.com

151 Callan Avenue - Suite #310 San Leandro, CA 94577

Tel: (510) 824-5591 E-mail: [email protected]

3DFP-0483 REV 3 — February 2020

MODULE MARKING

MECHANICAL DRAWING

3DSD4G16VS8483 X X

Temperature Range

C = (0°C to +70°C) I = (-40°C to +85°C) S = Specific (-40°C to +105°C)

Quality Level

N = Commercial Grade B = Industrial Grade S = Space Grade

3D PLUS SALES OFFICES

Dimensions (mm)

MIN MAX

A 11.80 12.50

A2 10.70 11.10

D 27.00 27.40

E 13.40 13.80

E1 10.85 11.05

b 0.35

e 0.80

Max. weight: 7.80 g

MEMORY MODULE

3Gbit SDRAM

Organized as 128Mx24, based on 128Mx4

SDRAM