solid state detectors for upgraded phenix detector at rhic
DESCRIPTION
Solid State Detectors for Upgraded PHENIX Detector at RHIC. Bits of history. 2003 - Maturity and planning for the next 10-15 years Precision measurements, extended coverage. FCAL. 1991 – Project Inception 1997 – First ion collisions in RHIC 2002 – statements of major discovery. SMD/. FCAL. - PowerPoint PPT PresentationTRANSCRIPT
Solid State Detectors for Upgraded PHENIX Detector at RHIC
1991 – Project Inception1997 – First ion collisions in RHIC2002 – statements of major discovery
Bits of history
SMD/
FCALFCAL
2003 - Maturity and planning for the next
10-15 years
Precision measurements,
extended coverage
PHENIX Upgrade
Solid State Upgrade components
• Central Barrel Silicon Tracker – Two layers of pixels (ALICE);– Two layers of StriPixels;
• Forward Silicon Trackers (South and North)• Four layers of silicon discs (short strips with pixel-type
readout) each;
• Forward W-Si Calorimeters (South and North)• 22 layers of 6x6 cm2 pad sensors (15x15 mm2 pads);• One layer of StriPixel Detectors (0.5 x 60 mm2 strips)
• Specifications– 4 layers with large acceptance ( & < 1.2)– Displaced vertex measurement : < 40 m– Charged particle tracking : p/p ~ 5% p at high pT
– Working detector for both of heavy ion and pp collisions
• Technology Choice– Hybrid pixel detectors in 2 inner layers– Stripixel sensors w/ SVX4 readout chip in 2 outer
layers
Barrel VTX Detector
Pixel layersr=5.0 cm, Δz~±10 cmr=2.5 cm, Δz~±10 cm
Strip layersr=10.0 cm, Δz~±16 cmr=14.0 cm, Δz~±19 cm
Beam pipe
Barrel: Pixel Detectors
• Technology choice: – ALICE1LHCb read-out chip
32 x 256 ch / chip– 4 chips bump bonded to sensor
with pixel size: 50 x 450 – Grouped to ladders– Readout through pilot module
• R&D with ALICE and NA60– Adapt technology to PHENIX – Detectors operated in NA60
Readout Bus
Sensor
Readout chipSupport/cooling
Half ladder
Pixel detector
NA60 In-In collision taken 2003
Analog PILOT(control, etc)
digital PILOT(read pixel data)
Optical link driver chip
(GOL)
Optical package
dataclock & control
Read out BusFrom pixel Optical I/O
PILOT module
Barrel: Strip Detector• Strip sensor
– BNL’s new “stripixel” concept : single-sided sensor w/ 2-D position sensitivity
– Charge sharing by 2 spirals in one pixel (80 μm ×1000 μm)& projective x/u-strip readout
– Pre-production sensor (Hamamatsu)
• p+/n/n+ structure• 3.5×6.4 cm2
• 625/500 μm thickness• Spiral : 5/3μm line/gap• Pixels :
384×30×2=23,040• Strips : 384×2×2=1,536
– Probing tests are on-going for evaluation
Z. Li, NIMA518, 738 (2004)
x3’ u1’ u2’
x2’ x1’ u1’u2 u3 x3
u1 x1 x2
0.00E+00
1.00E-12
2.00E-12
3.00E-12
4.00E-12
5.00E-12
6.00E-12
7.00E-12
8.00E-12
9.00E-12
1.00E-11
0 50 100 150 200 250 300 350 400
V_bias [V]
C [
F]
0.00E+00
5.00E-10
1.00E-09
1.50E-09
2.00E-09
2.50E-09
3.00E-09
3.50E-09
0 50 100 150 200 250 300 350 400
V_bias [V]
I [A
]CVIV
End Caps: Wedge shaped strip detectors
Backplane
-V
R Amplifier
GND
C
W-Si Forward Calorimeters
Calorimeters: numerology
0 identifier (shower max detector)
Sensors 168 6x6 cm2, 600, single sided, single layer, 2-d readout (stripixels)
Pitch 0.5 mm
Readout channels 43000
SVX4 336
Electromagnetic (fine) section
Sampling structure 5mm x 16 2.5 mm W + 0.3 mm Si + PCB + protection and air gap
Sensors 2688 6x6 cm2, 300 Si, 15x15 mm2 readout pads, 168 sensors per layer
Readout channels 5376 6 or 10 pads are ganged per readout channel
Hadronic (coarse) section
Sampling structure 18 mm x 6 15.5 mm W + 0.3 mm Si + PCB + protection and air gap
Sensors 1176 196 per layer
Readout channels 3136 6 pads are ganged per readout channel
Calorimeters: Sampling cell design
Backplane
-V
R Amplifier
GND
C
Detector ladder glued to the W plate
To avoid To avoid draining bulk current into electronics;draining bulk current into electronics;loss of electronics whenever channel trips;loss of electronics whenever channel trips;
and to save spaceand to save space
Thin film technology used to implement rc-chip on interconnect board
Absorber (W)
Sensors carrier board
AC Coupled Si Detector
SiO2
p+n+
Al
AlSiO2+Si3
N4
Polysilicon bias resistors
bias strip
Calorimeters: solution to decoupling
30% extra cost
$160 -> $240 for 6x6 cm2 detector
Prototype Silicon Wafers For Calorimeter
62 mm
62 m
m
Si Wafer :4x4 pads of detection
(15x15 mm2)
4” High resistive wafer : 4” High resistive wafer : 5 K5 Kcmcm
Thickness : 300 microns Thickness : 300 microns 3 % 3 %
Tile side : Tile side : 62.0 + 0.062.0 + 0.0
- 0.1 mm- 0.1 mm
Guard ringGuard ring
In Silicone ~80 e-h pairs / micron In Silicone ~80 e-h pairs / micron 24000 e24000 e-- /MiP/MiP
Capacitance : ~80 pFCapacitance : ~80 pF
Leakage current : 5 – 15 nALeakage current : 5 – 15 nA
Full depletion bias : ~100 VFull depletion bias : ~100 V
Nominal operating bias : 150 VNominal operating bias : 150 V
ELMA:Well established technology;Long production historyGood reputation
Calorimeters: 0 identifier
RC
RCSVX4
SVX4
Test structure mask
X
Y500
Upgrade Schedule Scenario
2002 2003 2004 2005 2006 2007 2008 2009 2010 2011
Aerogel
TOF-W
HBD
VTX-barrel
VTX-endcap
NCC
MuTrigger
DAQ
R&D Phase Construction Phase Ready for Data
BACKUPS
Stripixel Sensor : Principle• A novel “stripixel” detector concept innovated by BNL
Instr. Div. : Z. Li, NIMA518, 738 (2004).– Single-sided sensor
– 2-dimentional position sensitivity by charge sharing
– Two independent electrodes interleaved in one pixel are projectively read out by strips.
• Advantages (compared with a double-sided strip sensor)– Simple structure : reduce costs and integration issues
– Radiation hard (cf. a complicated n+ side structure in a double-sided strip sensor)
• Disadvantages– Large capacitance/strip due to the interleaving scheme
– Decrease in S/N due to charge sharing
1000 m
80 m
U-pixel(1stmetal)
X-pixel(1stmetal)
2nd MetalX-strip
2nd MetalU-strip
FWHMfor chargediffusion
BondingPad forX-strip
Go toBondingPad forU-strip
Z. Li, Inst. Div., BNL
Silicon Strips Detectors for Central Tracker
• Sensor technology choice:– Single sided, two dimensional read-out
sensor developed by Z. Li of BNL Inst. Division
– 80 x 3 cm strip– X/U stereo read-out– 384 x 2 x 2 per sensor chip (64.6 mm x
30.7 mm)
• Readout chip technology choice:– SVX4 chip developed by FNAL/LBNL – 128 ch/chip– 50 pitch read-out
• Ongoing R&D– Sensor prototype tests – Tests of SVX4 readout with sensor
Sensor structure
SVX4 chip
Design of the test hybrid moduleWith SVX4 readout chip