soi substrates for connectivity, power, photonics,...

SOI substrates for

Connectivity, Power,

Photonics, Imagers

Stephen Lin

SOI Workshop, September 2017, Nanjing, China

Outline

Delivering value for everyday life through SOI engineered substrates

Soitec’s solutions for Connectivity

Soitec’s solutions for Power

Soitec’s solutions for Photonics

Soitec’s solutions for next generation Imagers

A robust SOI supply chain

Conclusion

9/22/2017 SOI Workshop Nanjing, China, 20172

SOITEC – Material & process expert enabling the future

3

Smart Cut TM

technology

SOI processed

wafer with multiple raw dice

per wafer

SOI substrates

(Silicon on Insulator)

Silicon die with millions of

transistors

SOI transistor

S

Base material

Buried Oxide

D

G

Si

IC

PCB

Starting

wafers

Engineered substrates


SOITEC – Adding value through engineered substrates

4

Using appropriate “foundations” is key to secure performance and avoid risks


SOITEC – A Leading Engineered Substrates Supplier

addressing Large Consumer related Markets

5

Dir

ect

Cu

sto

mers

Ke

y M

ark

et

pla

yers

PhotonicsPowerRF Front-end

ModuleProcessor &

connectivity SoC

FD-SOI RF-SOI Power-SOI Photonics-SOI

Imagers

Imager-SOI


http://www.google.fr/url?url=http://commons.wikimedia.org/wiki/File:Cisco_logo.svg&rct=j&frm=1&q=&esrc=s&sa=U&ei=k_NjVd28NIHlUYbbgOgL&ved=0CCMQ9QEwAA&usg=AFQjCNGoRevE8WKEPs3O79X4D7BEQicEhg

http://www.google.fr/url?url=http://pasaporti.blogspot.com/2015/04/apple-logo.html&rct=j&frm=1&q=&esrc=s&sa=U&ei=6fNjVcTIHInwUKaqgZgM&ved=0CB4Q9QEwBA&usg=AFQjCNG08x7L8A73RaW2A5uzeZWeyswVqg

4 core technologies available

to manufacture engineered substrates

6

Handle Substrate:

CZ Silicon, High-resistivity Si, Sapphire, Glass

Device Layer:

Silicon, Strained Silicon, Germanium, III-V…

Buried Insulator: SiO2, ONO…

Engineered substrates

Anything on anything

Smart Cut™ Smart Stacking™

Epitaxy Expertise Compound

Expertise


Revolutionary Smart Cut™ technology

7

〉 Industrial manufacturability of SOI

〉 Drastical improvement of uniformity & quality

〉 Re-use of donor wafer increases cost efficiency

〉 Flexibility of material integration

SOI Workshop Nanjing, China, 20179/22/2017

Imager-SOI

RF-SOIFD-SOI

Power-SOI

Photonics-SOI

SOI adoption via Partnerships and Collaborations

From technology development to manufacturing


2005 2009 2011 2012 2015

RF-SOI 300mm

ramp

Soitec RFeSi substrate ramp

RF-SOI switch

mainstream1st RF-SOI

switch

TR-SOI UCL & Soitec IP

RF

-SO

I

>50%

FD

-SO

I

Advanced

R&D

Industrial

PartnerMaterials Research

28FD

Foundry offer

2005 2008 2010 2014 2015 Soon…

22FD

Foundry offer

12FD

Foundry offer

18FD

2017

Bringing unique material solutions to customers

9


Module

Processor &

connectivity SoC


Imagers

Imager-SOI

20+ years of expertise in developing SOI and other engineered substrates for high-volume manufacturing

Mono-crystal Top

SiliconBuried Oxide

Trap Rich Layer

High Resistive

Base

Thin Buried Oxide

Base (Si)

Mono-crystal Top MaterialMono-crystal Top

Material

Buried Oxide

Base (Si)

Mono-crystal Top

Material

Buried Oxide

High Resistive

BaseBase (Si)

Thin Buried Oxide

Mono-crystal Top

Material

For power efficient &

flexible digital

computing with easy

Analog/RF integration

For high efficient

mobile communication

For seamless high

voltage device isolation

For photonics

applications with

integrated optical

waveguides

For NIR CIS substrate

based noise

cancellation solutions



10


Module

Processor &

connectivity SoC


Imagers

Imager-SOI


Mono-crystal Top

SiliconBuried Oxide

Trap Rich Layer

High Resistive

Base

Thin Buried Oxide

Base (Si)


Material

Buried Oxide

Base (Si)

Mono-crystal Top

Material

Buried Oxide

High Resistive

BaseBase (Si)

Thin Buried Oxide

Mono-crystal Top

Material


flexible digital

computing with easy


For high efficient


For seamless high


For photonics

applications with

integrated optical

waveguides


based noise



Perfect fit for wireless & ULP

/ ULL IoT clients in need of :

FD-SOI brings huge differentiation in mobile, IoT, 5G &

automotive markets

IoTMobility

Automotive5G & Radars

Best Power/Perf/Cost

solution for

Ideal technology for Unique advantages in low power/ high

reliability (SER)

〉2021 (est.): 1-3M wafers/y.FD-SOI global wafers estimate: Source : Soitec estimates

〉 Low-mid tier Baseband + AP

〉 4G transceiver integration

〉 5G mmWave design

〉 On-demand processing performance

〉 Integrated RF

〉 Embedded memory

〉 5G mmWave low power

single chip solution with

integrated PA

〉 <6GHz applications (transceivers) w/ 35-50% die

shrink (vs 28 poly) for LTE, Wifi

and other wireless applications

〉 ADAS (<5W) for autonomous driving

〉 Radar - Mid to long range single chip

〉 Infotainment

〉 MCU for Body Electronics


The FD-SOI revolution has started

in consumer & automobile

Consumer: a game changer technology for

better battery life

Automotive : best power efficiency allowing

simpler integration and enhanced reliability

〉 FD-SOI based Sony GPS

to cut standard GPS power

consumption by 5 to 10x

〉 Now, more than a day

autonomy with GPS ON

〉FD-SOI technology unlocks battery-powered

device potential

〉 i.MX based reference

platform developed by NXP

for Amazon’s Alexa

〉 FD-SOI is a key enabler

of the i.MX reference

platform for always-on

applications

〉FD-SOI - reference technology for ADAS

level 3 applications

〉Next generation e-Cockpit solution with full

management of car infotainment

〉 Level 3 autonomous

driving

〉 Tops @ only 3W

〉 Advanced features -

object recognition

through neural network


FD-SOI: A strong ecosystem

SOI Workshop Nanjing, China, 201713

Research Technology & IP Substrates

Tools & EDA

IP & Design Services Fabless & OEMs Consumer Products

& Licensees

>100 customer engagements

9/22/2017

Foundries&IDM

Consumer Products

Level 3 autonomous driving

Advanced features – object

recognition through neural

network

EyeQ4

i.MX 8 seriesAdvanced Graphics &

Performance ARM® v8-A

FD-SOI: A unique technology roadmap fulfilling IoT needs

Cost-effective & performance for

Low-power applicationsPerformance & density at

any cost - for Servers, networking &

High-end Mobile

Bulk

90/65/45

nm

HK,

PolySi

28nm

FD-SOI

65 nm

FD-SOI

28 nm

FD-SOI

12 nm

eMRAM

FD-SOI

22 nmFinFET

16/14nm

FinFET

10 nm

FinFET

7nm

FD-SOI

18 nmeMRAM

eMRAM



15


Module

Processor &

connectivity SoC


Imagers

Imager-SOI


Mono-crystal Top

SiliconBuried Oxide

Trap Rich Layer

High Resistive

Base

Thin Buried Oxide

Base (Si)


Material

Buried Oxide

Base (Si)

Mono-crystal Top

Material

Buried Oxide

High Resistive

BaseBase (Si)

Thin Buried Oxide

Mono-crystal Top

Material


flexible digital

computing with easy


For high efficient


For seamless high


For photonics

applications with

integrated optical

waveguides


based noise



RF-SOI : solution of choice to address requirements

of LTE/ 4G and 5G

Source : Soitec estimates, Navian April 2017

3X higher data rate

2X more antennas

50X more carrier aggregation cases

Increased complexity to deliver higher data rates

Source : 3GPP

Growing RF-SOI content:migration to new LTE standards

>40mm²

2016 2021

Value proposition RF-SOI TAM (8” equivalent)

Source : Soitec estimates

Soitec estimated

market by 2021

>2M wafers/y.

Current addressabIe

market in 2016

~1M wafers/y.

~15% CAGR

Iphone 7Iphone 6Iphone 5S Samsung

Galaxy S8

32mm²27mm²18mm²9mm²

2021

LTE A PRO

& 5G <6GHZ

16

〉 Enables Integration (switch, LNA, PA,

passives)

〉 Lowest cost vs. GaAs and MEMS

technologies

〉 Available in both 200 and 300mm


RF-SOI - Multiple design platforms for Front End Modules

17

…

> 10 foundries

in HVM mode

mmW

SwitchAntenna

Tuner

LNA

PA Digital

DAC

ADC

PLL Mixers

+

RF-SOI

0.25um

RF-SOI

0.18um

RF-SOI

0.13um

RF-SOI

90nm

RF-SOI

65nm

RF-SOI

45nm

Addressing current needs

and new challenges

< 6Ghz



18


Module

Processor &

connectivity SoC


Imagers

Imager-SOI


Mono-crystal Top

SiliconBuried Oxide

Trap Rich Layer

High Resistive

Base

Thin Buried Oxide

Base (Si)


Material

Buried Oxide

Base (Si)

Mono-crystal Top

Material

Buried Oxide

High Resistive

BaseBase (Si)

Thin Buried Oxide

Mono-crystal Top

Material


flexible digital

computing with easy


For high efficient


For seamless high


For photonics

applications with

integrated optical

waveguides


based noise



Power-SOI enables seamless high voltage device isolation

Semi content drivers for automotive and

industrial applicationsPower-SOI content in automotive

Value proposition Power-SOI TAM (8” equivalent)

Source : Soitec estimates

Current addressable

market in 2016

350K wafers/y.

Soitec estimated

market by 2021

>500K wafers /y.

~8% CAGR

80mm²2015

>100mm²2021

Average SOI content in every car

19

〉 More electronic content per vehicle

〉 New energy efficiency standard

〉 IVN network

〉 Safety

〉 Infotainment

〉 Next generation of “white goods”

〉 Industrial applications

〉 High reliability

〉 Automotive grade compatibility proven

〉 Easy integration of different voltages

〉 High temperature compatibility

〉 Low Electro Magnetic Interference (EMI)

SOI Workshop Nanjing, China, 20179/22/2017

Power SOI - High reliability & performance at competitive cost

20

Energy EfficiencyHigh Reliability Cost effective

10+ years

Enabling high reliability in harsh

environment:

- High temperature

- High voltage

Source: NXP, Analyst Day 2014

+94% energy efficiency

Used in power supply for mobile:

smaller die size with fully integrated

power supply.

Source: NXP, GreenChip, Analyst Day 2012

55% area reduction

Proven track record in automotive IVN ICs

Source: Atmel Mixed-signal ICs for Body & Powertrain

Electronics

Atmel’s mixed-signal BCD-on SOI

technology (SMARTISTM), used in many

body electronics and powertrain devices,

enables maximum integration, extended

EMC performance and high-temperature

capability.

SOI

SOI

Bulk

Bulk

In mixed-signal ICs for Body and Powertrain electronics


https://www.google.fr/url?sa=t&rct=j&q=&esrc=s&source=web&cd=1&cad=rja&uact=8&ved=0CCEQFjAAahUKEwjk3aCz4rfHAhVE0hoKHW57CFU&url=http://notes-application.abcelectronique.com/015/15-16345.pdf&ei=YNbVVeStN8Ska-72oagF&usg=AFQjCNEdYE5txHXCanRNiUPV7bzmRhB0Tw&bvm=bv.99804247,d.d2s


21 SOI Workshop Nanjing, China, 20179/22/2017


Module

Processor &

connectivity SoC


Imagers

Imager-SOI


Mono-crystal Top

SiliconBuried Oxide

Trap Rich Layer

High Resistive

Base

Thin Buried Oxide

Base (Si)


Material

Buried Oxide

Base (Si)

Mono-crystal Top

Material

Buried Oxide

High Resistive

BaseBase (Si)

Thin Buried Oxide

Mono-crystal Top

Material


flexible digital

computing with easy


For high efficient


For seamless high


For photonics

applications with

integrated optical

waveguides


based noise


Silicon photonics is a pure SOI technology

… and it is in Data Centers now

9/22/2017 22 SOI Workshop Nanjing, China, 2017

High speed, long range, low power

optical transceivers for next

generation datacenters

Luxtera

100G (4x26) PSM4 QSFP

CISCO

100G LR4 CPAK

INTEL

100G CWDM4 QSFP28

Mellanox

100Gb/s QSFP28

9/22/2017 22

Silicon photonics chip

IoT (sensing)

Automotive

Already on SOI

Other potential

SOI markets

SOI enables silicon photonicsSilicon photonics value in optical transceivers


Modulators Couplers Optical fiber

〉 SOI enables optical industry to be compatible with

CMOS industry

〉 Silicon substrate with BOX Mandatory to guide

light

〉 Low -cost integration of 100s of different

components

〉 Integration to reduce size and power consumption

〉 Compatible with full CMOS ecosystem (front-end,

back-end, packaging)

〉 Compatible with electronic co-packaging

Laser MCUDriver IC


24 SOI Workshop Nanjing, China, 20179/22/2017


Module

Processor &

connectivity SoC


Imagers

Imager-SOI


Mono-crystal Top

SiliconBuried Oxide

Trap Rich Layer

High Resistive

Base

Thin Buried Oxide

Base (Si)


Material

Buried Oxide

Base (Si)

Mono-crystal Top

Material

Buried Oxide

High Resistive

BaseBase (Si)

Thin Buried Oxide

Mono-crystal Top

Material


flexible digital

computing with easy


For high efficient


For seamless high


For photonics

applications with

integrated optical

waveguides


based noise


SOI drastically improves image sensor performance in NIR


〉 3D cam is the next big thing in smartphones

〉 Enhanced AR/VR experience

〉 Facial recognition

〉 Gesture recognition

〉 High performance NIR image sensor is required

CAMERAPROJECTOR

〉 Dark current removal

〉 Increased Signal/Noise ratio

〉 Increased resolution-

--

--

-

-

- -

-

-

〉 Substrate based noise cancellation

solution

650 K wafers/y. capacity of which FD-SOI capacity will be

increased from 100 K wafers/y.

to 400 K wafers/y.

Soitec ensures SOI wafer supply

26

300mm SOI

200mm SOI

Soitec Bernin I, France

HVM

Simgui, China

Ramp to HVM

Soitec Bernin II, France

HVM

+ 800 K wafers/y.

capacity (Investment decision

pending)

Total potential 300mm

capacity =

Up to 1.5 M wafers/y.

850 K wafers/.y capacity

75 K wafers/y. capacity to be raised to 150 K wafers/y.

by FY’19

Total 200mm

capacity =

1 M wafers/y.by FY’19

SOI Workshop Nanjing, China, 2017

Pasir Ris, Singapore

Ready HVM

9/22/2017

Conclusion

SOI is becoming a mainstream solution across several applications and markets

The SOI ecosystem - including SOI supply, is reaching the maturity level

required by mass markets


谢谢


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