snowmass, august, 2005p. colas - ingrid1 m. chefdeville a, p. colas b, y. giomataris b, h. van der...
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Snowmass, August , 2005 P. Colas - InGrid 1
M. Chefdevillea , P. Colasb, Y. Giomatarisb, H. van der Graafa, E.H.M.Heijnec, S.van der Puttena, C. Salmd, J. Schmitzd, S. Smitsd, J. Timmermansa, J.L. Visschersa
a) NIKHEF Amsterdam, b) DAPNIA Saclay, c) CERN, d) Twente University/MESA+
InGrid, an integrated Micromegas InGrid, an integrated Micromegas made in Silicon wafer post-processing made in Silicon wafer post-processing
technologytechnology
InGrid, an integrated Micromegas InGrid, an integrated Micromegas made in Silicon wafer post-processing made in Silicon wafer post-processing
technologytechnology
•Motivation
•Process
•First results
•Future
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Snowmass, August , 2005 P. Colas - InGrid 2
Reminder : Micromegas + pixels MICROMEsh GASeous detector
:Amplification region : 50-100 micron
gapAmplification field >> drift field =>
efficient collectionGap small => fast signals
Optimally, anode pad size can be = hole pitch
->VLSI (CMOS) electronics (Medipix2)
65000 pixels on 2cm2
S1
S2
NIKHEF-Saclay CERN Twente Collaboration since early 2004
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Snowmass, August , 2005 P. Colas - InGrid 3
He/Isobutane80/20Modified MediPix(80% of the pixel is conductive, instead of 20%)
Cluster by clusterMIP detection
δ-ray?
Very successful, but…
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Snowmass, August , 2005 P. Colas - InGrid 4
Non Modified Modified
•Moiré effect: pitch Micromegas holes: 60 μm pitch MediPix pixels: 55 μm Periodic position of hole w.r.t. pixel: repeats after 12 pixels• The frame has a finite thickness• Difficult to reach a perfect adhesion of the frame to the surface
But…
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Snowmass, August , 2005 P. Colas - InGrid 5
Integrate GEM/Micromegas and pixel sensor by ‘wafer post-processing’ :
thinness and robustness of the gridaccuracy of the gap (provides excellent resolution and
uniformity)
no frame (no loss of active surface)
possibility to fragment the mesh (provides noise reduction and additional localisation usable for zero-suppression)
First step : try the process on bare Si wafers (without CMOS circuit)
‘GEM’ ‘Micromegas’
InGrid
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Snowmass, August , 2005 P. Colas - InGrid 6
1) Oxide the Si wafer, insulating SiO2 layer on top
2) Deposition of 0.2 m of Al for anode, and patterning
3) Deposition of 50 m photo- resist and UV exposure
4) Deposition and patterning of the grid: 0.8 m of pure Al
5) Removal of the exposed photoresist
RESULT : a thin mesh (0.8 m compared to 3-5 m with best standard techniques), sustained at an accurate 50 m from the anode.
InGrid process
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Snowmass, August , 2005 P. Colas - InGrid 7
INGRID: some first trials
Various pitches, shapes
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Snowmass, August , 2005 P. Colas - InGrid 8
Test setup 55Fe source
740 MBq
Collimated on 1mm diameter
Drift cathode
InGrid wafer
HV connectors to measure mesh, cathode and anode currents, and mesh signal
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Snowmass, August , 2005 P. Colas - InGrid 9
Result of the process
After 1 year of trials and improvements, a satisfactory InGrid holds the voltage.
Pitch 60 m
Pillars, 40 m diameter
No inefficiency
Al grid
4 ’’ wafer with 19 InGrids
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Snowmass, August , 2005 P. Colas - InGrid 10
July 2005, first successful test
After 1 year of trials and improvements: first 55Fe signal in an Ingrid detector with He+20%isobutane.
HV=400V
Edrift~1kV/cm
No collimation
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Snowmass, August , 2005 P. Colas - InGrid 11
Results with Argon + 20% isobutane
55Fe 5.9 keV line and escape line in Ar clearly visible.
Unprecedented resolution: E/E = 6.5%.
(FWHM=15.3%)
K and K (6.5 keV) lines are separated by the fit.
Ar escape
55Fe K
55Fe K
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Snowmass, August , 2005 P. Colas - InGrid 12
Gain curves
Gains up to O(104) are reached with this first InGrid
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Snowmass, August , 2005 P. Colas - InGrid 13
Currents
The currents through the cathode, the grid and the anode are measured
This allows a measurement of the ion backflow fraction : O(1%), consistent with the field ratio.
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Snowmass, August , 2005 P. Colas - InGrid 14
Future
Try various hole size and pitch (19 already available), thinner gaps.
In parallel develop the chip to provide it with time measurement capability (TimePix, Si TPC)
The work on the Si TPC will receive funding from European Community (EUDET project).
~780 k€, plus a commitment of ~1300 k€ from NIKHEF, Saclay and Freiburg in 2006-2009.
Others are welcome to join, even not from Europe.
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Snowmass, August , 2005 P. Colas - InGrid 15
Conclusion
The first InGrid shows unprecedented performances
Excellent energy resolution
No need for a frame: the mesh is sustained everywhere.
Easy to segment the mesh (thus lowering the capacitance) and to align mesh and
pads
Once the process will be fully stabilized, post-processing onto Medipix2 and Timepix will give a cluster-resolving TPC, very interesting to
- understand further gas ionization and study how Micromegas works
- make a digital TPC