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,

,

,

,

ConceptGraphene,

New,Electronics,Concept:,Wafer6Scale,Epitaxial,Graphene,,

,

Small,or,medium6scale,focused,research,project,

,

,WP5,Dissemination,and,Exploitation,

,

,

Deliverable,5.4,“Final,plan,for,the,use,and,dissemination,of,foreground”,

Main,Author:,,

T.,Löfwander,,R.,Yakimova,,S.,Kubatkin,

,

,

Nature,of,deliverable:,R,=,Report,

Dissemination,level:,PU,=,Public,

Due,date,of,deliverable:,M36,

Actual,submission,date:,M36,

Project funded by the European Commission under grant agreement n°257829 ,

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LIST,OF,CONTRIBUTORS,

Partner Acronym Laboratory Name Name of the contact

1(coordinator), CTHA, Chalmers,Tekniska,Hoegskola,AB, Tomas,Löfwander,

6, LiU, Linkoping,University, Rositza,Yakimova,

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Use,and,dissemination,of,foreground,(section,4.2,of,the,final,report),

The plan consists of four tables divided into two sections:

! Section A This section describe the dissemination measures, including any scientific publications relating to foreground. ! Section B This should specify the exploitable foreground and provide the plans for exploitation.

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Section A (public)

This section includes two tables

! Table A1: List of all scientific (peer reviewed) publications relating to the foreground of the project. ! Table A2: List of all dissemination activities (publications, conferences, workshops, web sites/applications, press releases, flyers, articles

published in the popular press, videos, media briefings, presentations, exhibitions, thesis, interviews, films, TV clips, posters). These tables are cumulative, which means that they should always show all publications and activities from the beginning until after the end of the project. Updates are possible at any time.

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TABLE A1: LIST OF SCIENTIFIC (PEER REVIEWED) PUBLICATIONS, STARTING WITH THE MOST IMPORTANT ONES

NO.

Title Main

author

Title of the periodical or

the series

Number, date

or frequen

cy

Publisher Place of

publication

Year of

publication

Relevant

pages

Permanent identifiers1 (if available)

Is/Will open

access2 provided to

this publication

? 1 Charge transfer between epitaxial

graphene and silicon carbide V. Falko Appl. Phys. Lett. 97 American Institute of

Physics USA 2010 112109 http://arxiv.org/abs/1007.4340 yes

2 Non-volatile photochemical gating of an epitaxial graphene/polymer heterostructure

S. Kubatkin Adv. Mater. 23 Wiley-VCH Germany 2011 878 no

3 Transport anomaly at the ordering transition for adatoms on graphene

V. Falko Phys. Rev. B 83 American Physical Society

USA 2011 201401 http://arxiv.org/abs/1102.1084 yes

4 Anomalously strong pinning of the filling factor v=2 in epitaxial graphene

V. Falko Phys. Rev. B 83 American Physical Society

USA 2011 233402 http://arxiv.org/abs/1009.3450 yes

5 Strained bilayer graphene: band structure topology and Landau level spectrum

V. Falko Phys. Rev. B 84 American Physical Society

USA 2011 041404 http://arxiv.org/abs/1104.5029 yes

6 Graphene, universality of the quantum Hall effect and redefinition of the SI system

V. Falko New J. of Physics

13 Institute of Physics and Deutsche Physikalische Gesellschaft

2011 093026 http://iopscience.iop.org/1367-2630/13/9/093026

yes

7 Disordered Fermi liquid in epitaxial graphene from quantum transport measurements

V. Falko Phys. Rev. Lett. 107 American Physical Society

USA 2011 166602 no

8 Graphene nanogap for gate-tunable quantum coherent single-molecule electronics

T. Löfwander

Phys. Rev. B 84 American Physical Society

USA 2011 155451 http://arxiv.org/abs/1108.4571 yes

,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,1 A permanent identifier should be a persistent link to the published version full text if open access or abstract if article is pay per view) or to the final manuscript accepted for publication (link to article in repository). 2 Open Access is defined as free of charge access for anyone via Internet. Please answer "yes" if the open access to the publication is already established and also if the embargo period for open access is not yet over but you intend to establish open access afterwards.

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9 The registry of graphene layers grown

on SiC(000-1) C. Virojanadara

Materials Science Forum

717-720 Trans Tech Publications Switzerland 2012 613 no

10 Evidence for spin memory in the electron phase coherence in graphene

V. Falko Phys. Rev. B 86 American Physical Society

USA 2012 045436 http://arxiv.org/abs/1108.2067 yes

11 Doping of epitaxial graphene on SiC intercalated with hydrogen and its magneto-oscillations

T. Seyller arXiv.org Cornell University Library USA 2011 http://arxiv.org/abs/1107.4769

12 Inducing Magnetism in Graphene Nanomesh

S. Roche Phys. Rev. B 84 American Physical Society

USA 2011 214404 http://arxiv.org/abs/1103.4188 yes

13 Tunable thermopower in a graphene-based topological insulator

D. Carpentier

Phys. Rev. B 85 American Physical Society

USA 2012 245441 http://arxiv.org/abs/1109.5568 yes

14 Graphene-based heterojunction between two topological insulators

X. Waintal Phys. Rev. X 2 American Physical Society

USA 2012 031004 http://arxiv.org/abs/1201.5044 yes

15 Quantum Hall effect in graphene with twisted bilayer stripe defects

T. Löfwander

Phys. Rev. B 87 American Physical Society

USA 2013

205429 http://arxiv.org/abs/1211.5351 yes

16 Precision comparison of the quantum Hall effect in graphene and gallium arsenide

V. Falko Metrologia 49 Institute of Physics Publishing

UK 2012 294 http://arxiv.org/abs/1202.2985 yes

17 Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)

B.J. van Wees

Nano Letters 12 American Chemical Society

USA 2012 1498 http://arxiv.org/abs/1202.3016 yes

18 Si intercalation/deintercalation of graphene on 6H-SiC(0001)

C. Virojanadara

Phys. Rev. B 85 American Physical Society

USA 2012 045418 no

19 Terahertz Radiation Driven Chiral Edge Currents in Graphene

S.D. Ganichev

Phys. Rev. Lett. 107 American Physical Society

USA 2011 276601 http://arxiv.org/abs/1107.3747 yes

20 Breakdown of the quantum Hall effect in graphene

V. Falko Conference on Precision Electromagnetic Measurements (CPEM)

IEEE 2012 510 no

21 z→-z Symmetry of Spin-Orbit Coupling and Weak Localization in Graphene

V. Falko Phys. Rev. Lett. 108 American Physical Society

USA 2012 166606 http://arxiv.org/abs/1111.5267 yes

22 Spin-orbit coupling assisted by flexural phonons in graphene

F. Guinea Phys. Rev. B 86 American Physical Society

USA 2012 245411 http://arxiv.org/abs/1209.4382 yes

23 Spectral footprints of impurity scattering in graphene nanoribbons

T. Löfwander

Phys. Rev. B 87 American Physical Society

USA 2013 205432 http://arxiv.org/abs/1212.5730 yes

24 Quantum resistance metrology using graphene

V. Falko Progress in Physics

76 2013 104501 http://arxiv.org/abs/1303.3749 yes

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25 Express Optical Analysis of Epitaxial

Graphene on SiC: Impact of Morphology on Quantum Transport

S. Kubatkin Nano Letters 13 American Chemical Society

USA 2013 4217 no

26 Phase Space for the Breakdown of the Quantum Hall Effect in Epitaxial Graphene

R.J. Nicholas

Phys. Rev. Lett. 111 American Physical Society

USA 2013 096601 http://arxiv.org/abs/1304.4897 yes

27 Phase coherence and energy relaxation in epitaxial graphene under microwave radiation

V. Antonov Appl. Phys. Lett. 103 American Institute of Physics

USA 2013 093103 no

28 Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene

R.J. Nicholas

Phys. Rev. B 87 American Physical Society

USA 2013 045414 http://arxiv.org/abs/1212.4903 yes

29 Standardization of surface potential measurements of graphene domains

O. Kazakova

Sci. Rep. 3 Nature Publishing Group UK 2013 2597 http://arxiv.org/abs/1305.0465 yes

30 Graphene and the universality of the quantum Hall effect

V. Falko Proceedings of the International School of Physics "Enrico Fermi"

185 IOS Press Netherlands 2013 323 no

31 Non-contact method for measurement of the microwave conductivity of graphene

R. Yakimova

Appl. Phys. Lett. 103 American Institute of Physics

USA 2013 123103 http://arxiv.org/abs/1304.1304 yes

32 Localized States Influence Spin Transport in Epitaxial Graphene

B.J. van Wees

Phys. Rev. Lett. 110 American Physical Society

USA 2013 067209 http://arxiv.org/abs/1208.3129 yes

33 Spins in epitaxiaal grafeen leven langer B.J. van Wees

NTvN 78 2012 304 no

34 Gigahertz quantized charge pumping in graphene quantum dots

J.T. Janssen

Nature Nanotech.

8 Nature Publishing Group UK 2013 417 http://arxiv.org/abs/1207.6597 yes

35 Moiré minibands in graphene heterostructures with almost commensurate √3×√3 hexagonal crystals

V. Falko Phys. Rev. B 88 American Physical Society

USA 2013 155415 http://arxiv.org/abs/1306.4341 yes

36 Generic miniband structure of graphene on a hexagonal substrate

V. Falko Phys. Rev. B 87 American Physical Society

USA 2013 245408 http://arxiv.org/abs/1211.4711 yes

37 Transport Signatures of pseudomagnetic Landau levels in strained graphene ribbons

V. Falko Phys. Rev. Lett. 110 American Physical Society

USA 2013 266801 http://arxiv.org/abs/1303.3140 yes

38 Interplay between uniaxial strain and magneto-phonon resonance in graphene

V. Falko Phys. Rev. B 87 American Physical Society

USA 2013 161404 http://arxiv.org/abs/1302.0200 yes

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39 Measurement of filling-factor-dependent

magneto-phonon resonances in graphene using Raman spectroscopy

D. Smirnov Phys. Rev. Lett. 110 American Physical Society

USA 2013 227402 http://arxiv.org/abs/1211.6094 yes

40 Monolayer MoS2: Trigonal warping, the Γ valley, and spin-orbit coupling effects

V. Falko Phys. Rev. B 88 American Physical Society

USA 2013 045416 http://arxiv.org/abs/1304.4084 yes

41 Spin memory and spin-lattice relaxation in two-dimensional hexagonal atomic crystals

V. Falko Phys. Rev. B 88 American Physical Society

USA 2013 195417 http://arxiv.org/abs/1308.0928 yes

42 Graphene: Growth and advanced THz spectroscopy

V. Darakchieva

Pan European Networks: Science&Technology

07 Pan European Networks Belgium 2013 125 no

43 On the Differing Sensitivity to Chemical Gating of Single and Double Layer Epitaxial Graphene Explored Using Scanning Kelvin Probe Microscopy

R. Yakimova

ACS Nano 7 American Chemical Society

USA 2013 4647 no

44 Magnetic quantum ratchet effect in graphene

S.D. Ganichev

Nature Nanotech.

8 Nature Publishing Group UK 2013 104 no

45 Thickness uniformity and electron doping in epitaxial graphene on SiC

R. Yakimova

Materials Science Forum

740-742 Trans Tech Publications Switzerland 2013 153 no

46 Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes

R. Yakimova

Carbon 57 Elsevier Netherlands 2013 477 no

47 Detailed studies of Na intercalation on furnace-grown graphene on 6H-SiC(0001)

C. Virojanadara

Surface Science 613 Elsevier Netherlands 2013 88 no

48 Epitaxial graphene on SiC(000(1)over-bar): functional electrical microscopy studies and effect of atmosphere

R. Yakimova

Nanotechnology 24 Institute of Physics UK 2013 215702 no

49 Competing topological phases in few-layer graphene

X. Waintal J. Comp. Elec. 12 Springer USA 2013 175 http://arxiv.org/abs/1211.6628 yes

50 Magnetic Insulator-Induced Proximity Effects in Graphene: Spin Filtering and Exchange Splitting Gaps

M. Chshiev Phys. Rev. Lett. 110 American Physical Society

USA 2013 046603 http://arxiv.org/abs/1211.6377 yes

51 Andreev magneto-interferometry in topological hybrid junctions

P. Carmier Phys. Rev. B 88 American Physical Society

USA 2013 165415 http://arxiv.org/abs/1306.2233 yes

52 Electron–phonon coupling in quasi-free-standing graphene

P. Hofmann J. Phys: Cond. Mat.

25 Institute of Physics UK 2013 094001 http://arxiv.org/abs/1210.1704 yes

53 Detecting the local transport properties P. Hofmann Appl. Phys. Lett. 102 American Institute of USA 2013 033110 http://arxiv.org/abs/1211.0446 yes

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and the dimensionality of transport of epitaxial graphene by a multi-point probe approach

Physics

54 Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

T. Seyller New Journal of Physics

15 Institute of Physics and Deutsche Physikalische Gesellschaft

2013 043031 http://iopscience.iop.org/1367-2630/15/4/043031/article

yes

55 Silicon nitride as top gate dielectric for epitaxial graphene

T. Seyller Materials Science Forum

740-742 Trans Tech Publications Switzerland 2013 149 no

56 Formation of high-quality quasi-free-standing bilayer graphene on SiC(0001) by oxygen intercalation upon annealing in air

H. Riechert Carbon 52 Elsevier Netherlands 2013 83 no

57 Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48

M. Wanke Appl. Phys. Lett. 102 American Institute of Physics

USA 2013 241601 no

58 Mono- and few-layer nanocrystalline graphene grown on Al2O3(0001) by molecular beam epitaxy

H. Riechert Carbon 56 Elsevier Netherlands 2013 339 no

59 Direct View of Hot Carrier Dynamics in Graphene

P. Hofmann Phys. Rev. Lett. 027403 American Physical Society

USA 2013 027403 http://arxiv.org/abs/1304.2615 yes

60 Looking behind the scenes: Raman spectroscopy of top-gated epitaxial graphene through the substrate

T. Seyller New Journal of Physics

15 Institute of Physics and Deutsche Physikalische Gesellschaft

2013 113006 http://iopscience.iop.org/1367-2630/15/11/113006

yes

61 Buffer layer free graphene on SiC(0001) via interface oxidation in water vapor

T. Seyller Submitted for publication

no

62 Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate

T. Seyller Submitted for publication

no

63 Phonon dispersion of the (6√3x6√3)R30° reconstruction on SiC(0001)

T. Seyller Manuscript in preparation

no

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TABLE A2: LIST OF DISSEMINATION ACTIVITIES

NO. Type of activities3

Main leader Title Date/Period

Place Type of audience4

Size of audience

Countries addressed

1 Conference S. Lara Avila Epitaxial graphene for quantum metrology 2011-10 St. Augustine, USA Scientific community 150 Whole world (international conference)

2 Conference T. Seyller Recent progress in epitaxial graphene on SiC(0001)

2011-04 Obergurgl, Austria Scientific community 150 Whole world

3 Conference T. Seyller Epitaxial graphene on SiC(0001) 2010-10 Albuquerque, USA Scientific community 200 Whole world 4 Conference T. Seyller Recent progress in epitaxial graphene on

SiC(0001) 2010-10 Sendai, Japan Scientific community 300 Whole world

5 Conference T. Seyller Recent progress in epitaxial graphene on SiC(0001)

2010-11 Strasbourg, France Scientific community 80 Whole world

6 Conference T. Seyller Epitaxial Graphene - From Flakes to Wafers 2010-12 Berlin, Germany Scientific community 75 Whole world 7 Conference T. Seyller Epitaxial Graphene - From Flakes to Wafers 2011-02 Winkelmoosalm,

Germany Scientific community 60 Europe

8 Work shop T. Seyller Wonderful world of graphene 2011-03 Bad Honnef, Germany

Scientific community 40 Europe

9 Conference T. Seyller Epitaxial Graphene on SiC(0001) 2011-03 Dallas, USA Scientific community 300 Whole world 10 Conference T. Seyller Recent advances in epitaxial graphene on

SiC(0001) 2011-04 Bilbao, Spain Scientific community 250 Whole world

11 Conference T. Seyller Recent advances in epitaxial graphene on SiC(0001)

2011-05 Seoul, South Korea Scientific community 100 Whole world

,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,3, ,A,drop,down,list,allows,choosing,the,dissemination,activity:,publications,,conferences,,workshops,,web,,press,releases,, flyers,,articles,published, in,the,popular,press,,videos,,media,briefings,,presentations,,exhibitions,,thesis,,interviews,,films,,TV,clips,,posters,,Other.,

4 A drop down list allows choosing the type of public: Scientific Community (higher education, Research), Industry, Civil Society, Policy makers, Medias, Other ('multiple choices' is possible).

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12 Conference T. Seyller Epitaxial graphene on SiC(0001): electronic

structure and transport measurements 2011-06 Tours, France Scientific community 100 Whole world

13 Conference T. Seyller Growth of Graphene on SiC 2011-08 Erice, Italy Scientific community 60 Whole world 14 Conference T. Seyller Tuning the Interface Between Epitaxial Graphene

and SiC(0001) 2011-09 Cleveland, USA Scientific community 200 Whole world

15 Public lecture T. Seyller Graphen: eine neue Form des Kohlenstoffs 2011-09 Regensburg, Germany

Civil Society 50 Germany

16 Conference J.T. Janssen Universality test of the quantum Hall effect using epitaxial graphene

2011-04 Obergurgl, Austria Scientific community 150 Whole world

17 Conference A. Tzalenchuk Graphene: setting new standards 2010-12 New Delhi, India Scientific community 200 Whole world 18 Conference A. Tzalenchuk Graphene: setting new standards 2011-01 Atsugi, Japan Scientific community 150 Whole world 19 Conference A. Tzalenchuk Graphene: setting new standards 2011-05 Berlin, Germany Scientific community 80 Whole world 20 Conference A. Tzalenchuk Graphene: setting new standards 2011-05 Assergi-L’Aquila,

Italy Scientific community 60 Whole world

21 Conference A. Tzalenchuk Graphene: setting new standards 2011-08 Cambridge, UK Scientific community 40 Whole world 22 Conference B. van Wees Quantized conductance of a suspended graphene

nanoconstriction in zero magnetic field

2011-04 Obergurgl, Austria Scientific community 150 Whole world

23 Conference T. Maassen Long spin relaxation times in epitaxial graphene on SiC(0001)

2011-10 St. Augustine, USA Scientific community 150 Whole world

24 Conference T. Maassen Spin transport in graphene based devices 2011-07 Singapore Scientific community 75 Whole world 25 Conference M. Mucha-

Kruczynski Bilayer graphene under strain 2011-04 Obergurgl, Austria Scientific community 150 Whole world

26 Conference V. Falko Charge transfer between SiC and graphene in epitaxial graphene

2011-07 Singapore Scientific community 75 Whole world

26 Workshop V. Falko Charge transfer between SiC and graphene in epitaxial graphene

2011-11 Hammeln, Germany Scientific community 30 Europe

28 Conference R. Yakimova Morphological stability of graphene on SiC 2011-04 Obergurgl, Austria Scientific community 150 Whole world 29 Conference R. Yakimova Epitaxial graphene grown by high temperature

sublimation 2011-10 St. Augustine, USA Scientific community 150 Whole world

30 Conference C. Virojanadara

Detailed studies of graphene grown on C-face SiC and functionalization

2011-10 St. Augustine, USA Scientific community 150 Whole world

31 Summer school

R. Yakimova Epitaxial graphene grown by high temperature sublimation

2011-09 Sunny Beach, Bulgaria

Scientific community 50 Whole world

32 Conference R. Yakimova Epitaxial graphene grown by high temperature 2011-10 St. Petersburg, Scientific community 150 Whole world

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sublimation Russia

33 Conference R. Yakimova Epitaxial graphene grown by high temperature sublimation

2011-09 Cleveland, USA Scientific community 200 Whole world

34 Press release S. Kubatkin, A. Tzalenchuk

Shining light on graphene sensors 2011 Chalmers and NPL Civil society N/A Whole world

35 Conference S. Kubatkin Quantum transport measurements in epitaxial graphene

2011-11 Windermere, UK Scientific community 120 Whole world

36 Conference S. Kubatkin Electronic proparties of epitaxial graphene and its use for metrology

2011 Basel, Switzerland Scientific community 80 Whole world

37 Conference S. Lara-Avila Disordered Fermi Liquid in Epitaxial Graphene from Quantum Transport Measurements

2012-06 Delft, Netherlands Scientific community 100 Whole world

38 Conference S. Lara-Avila Disordered Fermi Liquid in Epitaxial Graphene from Quantum Transport Measurements

2012-04 Brussels, Belgium Scientific community 150 Whole world

39 Ph.D. Thesis S. Lara-Avila Magnetotransport characterization of epitaxial graphene on SiC

2012 Göteborg, Sweden Scientific community, industry

N/A Whole world

40 Conference T. Seyller Tuning the interface between epitaxial graphene and SiC(0001)

2012-09 Yokohama, Japan Scientific community 60 Whole world

41 Conference T. Seyller Tuning the Interface between Epitaxial Graphene and Silicon Carbide

2012-09 Granada, Spain Scientific community 180 Whole world

42 Conference T. Seyller Tuning the Interface between Epitaxial Graphene and SiC(0001)

2012-06 Brisbane, Australia Scientific community 140 Whole world

43 Conference T. Seyller Engineering the Interface between Epitaxial Graphene and SiC

2012-06 Melbourne, Australia

Scientific community 75 Whole world

44 Workshop T. Seyller Raman Spectroscopy of Graphene on SiC 2012-04 Bad Staffelstein, Germany

Scientific community 40 Europe

45 Conference T. Seyller Tuning the Interface between Epitaxial Graphene and SiC(0001)

2011-11 Windermere, UK Scientific community 120 Whole world

46 Conference T. Seyller Recent advances in epitaxial graphene on SiC(0001)

2011-10 St. Petersburg, Russia

Scientific community 150 Whole world

47 Conference A. Tzalenchuk Progress in graphene metrology 2011-11 Windermere, UK Scientific community 120 Whole world 48 Conference B. van Wees Spintronics in Graphene 2012-08 Eindhoven,

Netherlands Scientific community Whole world

49 Conference B. van Wees Spintronics in Graphene 2012-09 London, UK Scientific community 150 Whole world 50 Conference B. van Wees Spintronics in Graphene 2012-09 Parma, Italy Scientific community 80 Whole world 51 Conference B. van Wees Spintronics in Graphene 2012-10 Exeter, UK Scientific community 65 Whole world

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52 Workshop

organization V. Falko The Physics of Graphene 2012-01

to 2012-03

Santa Barbara, USA

Scientific community N/A Whole world

53 Conference M. Mucha-Kruczynski

Bilayer graphene under strain 2012-07 Genoa, Italy Scientific community 65 Whole world

54 Conference R. Yakimova Synthesis of graphene by high temperature sublimation of SiC

2011-11 Windermere, UK Scientific community 120 Whole world

55 Conference R. Yakimova Epitaxial Graphene for Quantum Metrology 2012-05 Seoul, South Korea Scientific community 200 Whole world 56 Conference R. Yakimova High temperature growth of large area graphene

on SiC wafers 2012-06 Copenhagen,

Denmark Scientific community 80 Whole world

57 Conference R. Yakimova High temperature graphene preparation and properties

2012-09 St. Petersburg, Russia

Scientific community 225 Whole world

58 Conference R. Yakimova Growth and properties of epitaxial graphene on SiC

2012-09 Linköping, Sweden Scientific community 60 Whole world

59 Conference X. Waintal Spin-orbit interaction induced by dilute ad-atom deposition on graphene

2011-11 Windermere, UK Scientific community 120 Whole world

60 Interview R. Yakimova Interview on “My Nano” presented at the Visualization Center

2012-10 Norrköping, Sweden

Scientific community N/A Whole world

61 Interview R. Yakimova Local news paper 2012 Linköping, Sweden Civil society N/A Sweden 62 Public lecture T. Seyller Nobelpreisträchtige Kohlenstoffwaben 2011-10 Erlangen, Germany Civil society 120 Germany 63 Workshop S. Kubatkin Electronic properties and metrological applications

of epitaxial graphene on Silicon Carbide 2012-11 Sannäs, Finland Scientific community 55 Whole world

64 Symposium S. Kubatkin Epitaxial graphene for quantum metrology 2012-11 Seoul, South Korea Scientific community 155 Whole world 65 Symposium T. Löfwander Quantum Hall effect in graphene with twisted

bilayer stripe defects 2012-01 Lund, Sweden Scientific community 25 Sweden, Germany,

France 66 Conference A. Tzalenchuk Progress in graphene metrology 2013-07 St. Petersburg,

Russia Scientific community 240 Whole world

67 Conference B. van Wees Graphene spintronics: The current state of the art 2013-04 Bilbao, Spain Scientific community 120 Whole world 68 Conference B. van Wees Spintronics in graphene 2013-02 Irrsee, Germany Scientific community 45 Whole world 69 Workshop B. van Wees Graphene spintronics 2013-11 Groningen,

Netherlands Scientific community 40 Whole world

70 Conference B. van Wees Spintronics in graphene 2012-10 London, UK Industry, scientific community

150 Whole world

71 Conference J. van den Berg

Spin Transport in Epitaxial Graphene and the Influence of Localized States

2013-01 Eindhoven, Netherlands

Scientific community 60 Netherlands

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72 Conference J. van den

Berg Localized States Influence Spin Transport in Epitaxial Graphene

2013-06 Chemnitz, Germany Scientific community 130 Whole world

73 Workshop V. Falko Graphene research at Lancaster 2013-10 Birmingham, UK Scientific community 40 UK 74 Conference V. Falko Generations of Dirac electrons in graphene-hBN

heterostructures 2013-09 Seville, Spain Scientific community 100 Whole world

75 Conference V. Falko Graphene heterostructures with hexagonal crystals

2013-09 Seville, Spain Scientific community 200 Whole world

76 Conference V. Falko Graphene heterostructures with semiconductors 2013-08 Suzhou, China Scientific community 130 Whole world 77 Conference V. Falko Electronic properties of graphene heterostructures

with hexagonal crystals 2013-08 Ouy Nhon, Vietnam Scientific community 210 Whole world

78 Conference V. Falko Graphene heterostructures with hexagonal crystals

2013-07 Gyeongju, South Korea

Scientific community 550 Whole world

79 Workshop V. Falko Graphene heterostructures with hexagonal crystals

2013-05 Minneapolis, USA Scientific community 50 Whole world

80 Conference V. Falko Graphene heterostructures with hexagonal crystals

2013-03 Baltimore, USA Scientific community 100 Whole world

81 Workshop V. Falko Generations of Dirac electrons in graphene heterostructures with hexagonal crystals

2013-02 Levi, Finland Scientific community 120 Whole world

82 Workshop V. Falko Graphene heterostructures with hexagonal crystals

2013-01 London, UK Scientific community 80 UK, China

83 Summer school

D. Gradinar Transport signatures of pseudo-magnetic Landau levels in strained graphene ribbons

2013-06 Cheshire, UK Scientific community 50 Whole world

84 Workshop R. Yakimova Progress in graphene growth on cubic SiC 2012-12 Catania, Italy Scientific community Europe 85 Conference R. Yakimova Control of morphology and charge carriers in

graphene on SiC 2012-10 London, UK Industry, scientific

community 150 Whole world

86 Conference R. Yakimova Morphological and electrical properties of epitaxial graphene on SiC

2013-05 Kariega Game Reserve, South Africa

Scientific community 65 Whole world

87 Conference R. Yakimova Challenges of Graphene Growth on Silicon Carbide

2013-05 Toronto, Canada Scientific community 135 Whole world

88 Symposium R. Yakimova Graphene on SiC - another carbon wonder 2013-09 Göteborg, Sweden Scientific community 120 Sweden 89 Symposium R. Yakimova Graphene on SiC 2013-10 Lund, Sweden Scientific community 80 Sweden 90 Presentation R. Yakimova Graphene – Present and Future 2013-10 Stockholm, Sweden Industry 40 Sweden 91 Presentation R. Yakimova Graphene on Silicon Carbide 2013-09 Mjölby, Sweden Industry 35 Sweden 92 Conference T. Seyller Quasi-free standing graphene on SiC – fabrication 2012-10 London, UK Industry, scientific 150 Whole world

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and properties community

93 Workshop M. Ostler Quasi-freestanding graphene on SiC(0001) via oxidation in water vapor

2012-10 Vienna, Austria Scientific community 45 Whole world

94 Conference T. Seyller Quasi-free standing graphene on SiC 2012-11 Boston, USA Scientific community 120 Whole world 95 Workshop T. Seyller Quasi-free standing graphene on SiC – fabrication

and properties 2012-12 Catania, Italy Scientific community 40 Europe

96 Symposium T. Seyller Epitaxial Graphene - From Flakes to wafers 2013-01 Chemnitz, Germany Scientific community 45 Germany 97 Symposium T. Seyller Epitaxial graphene on SiC: growth, properties, and

manipulation 2013-01 Chemnitz, Germany Scientific community 35 Germany

98 Lecture T. Seyller Epitaxial graphene on SiC: fabrication and properties

2013-04 Chemnitz, Germany Scientific community 50 Germany

99 Conference T. Seyller T. Seyller: Graphene on SiC(0001) – role of the buffer layer

2013-04 Madrid, Spain Scientific community 80 Europe

100 Conference T. Seyller Epitaxial Graphene - from Flakes to Wafers 2013-05 Berlin, Germany Scientific community 60 Whole world 101 Press release R. Yakimova Graphene-on-SiC heads from lab to fab 2013-05 Linköping, Germany Civil society N/A Whole world

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Section B (Confidential5 or public: confidential information to be marked clearly) Part B1 The applications for patents, trademarks, registered designs, etc. shall be listed according to the template B1 provided hereafter.

The list should, specify at least one unique identifier e.g. European Patent application reference. For patent applications, only if applicable, contributions to standards should be specified. This table is cumulative, which means that it should always show all applications from the beginning until after the end of the project.

TEMPLATE B1: LIST OF APPLICATIONS FOR PATENTS, TRADEMARKS, REGISTERED DESIGNS, ETC.

Type of IP Rights6:

Confidential Click on YES/NO

Foreseen embargo

date dd/mm/yyyy Application reference(s)

(e.g. EP123456) Subject or title of application

Applicant (s) (as on the application)

Patent,YES, Unknown, PCT/SE2011/050328, Process,for,growth,of,

graphene, R.,Yakimova,,T.,Iakimov,,M.,Syväjärvi,

,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,5 Note to be confused with the "EU CONFIDENTIAL" classification for some security research projects.

6 A drop down list allows choosing the type of IP rights: Patents, Trademarks, Registered designs, Utility models, Others.

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Part B2

Type of Exploitable Foreground7

Description of exploitable

foreground

Confidential

Click on YES/NO

Foreseen embargo

date dd/mm/yyyy

Exploitable product(s) or measure(s)

Sector(s) of application8

Timetable, commercial or any other use

Patents or other IPR exploitation (licences)

Owner & Other Beneficiary(s) involved

Improved graphene quality and improved characterization techniques

Graphene wafers

1. Electronics

2. Metrology

immediately Linkoping

Graphensic AB

Quantum Hall effect in single Hall bars

Table top resistance standard based on the quantum Hall effect

1. Electronics

2. Metrology

2015 All European metrological institutions

The first item in the above table refers to the improved growth protocol at Linkoping and in particular the better characterization tools for large area wafers developed during project, in particular contactless microwave electrical characterization and express optical analysis. The characterization allows a fast way to see the unwanted areas of bilayers and can serve to mark particular good samples. This is already used in Linkoping and by Graphensic AB. IPR is not planned here and the method has been published in T. Yager et al., Nano Letters 13, 4217 (2013). The impact is good in the sense that buyers of the material know in advance the bilayer coverage. For the second item, there is a European project (EMRP) called GRAPHOHM in which all European metrological institutions are participating. The explicit goal is to develop further the graphene quantum Hall resistance standard demonstrated in ConceptGraphene and make it available in 2015 as a table-top device. The device should be ready by the end of the GRAPHOHM project in 2015 and will benefit the whole of Europe through the metrological institutions.

,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,19 A drop down list allows choosing the type of foreground: General advancement of knowledge, Commercial exploitation of R&D results, Exploitation of R&D results via standards, exploitation of results through EU policies, exploitation of results through (social) innovation. 8 A drop down list allows choing the type sector (NACE nomenclature) : http://ec.europa.eu/competition/mergers/cases/index/nace_all.html