silicon n-channel power mosfet hgq011n03a-g
TRANSCRIPT
General Description: V
A
A
W
mΩ
Features:
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Halogen Free
Applications:
Power switch circuit of adaptor and charger.
VDSS Drain-to-Source Voltage 30 V
Continuous Drain Current TC = 100 °C (Package limited) 100 A
IDM
a1 Pulsed Drain Current TC = 25 °C 400 A
ID
Continuous Drain Current TC = 25 °C(Silicon limited) 300 A
Continuous Drain Current TC = 25 °C (Package limited) 100 A
®
HGQ011N03A-G
Silicon N-Channel Power MOSFET
147
Absolute(Tj= 25 unless otherwise specified):
Symbol Rating UnitsParameter
HGQ011N03A-G, the silicon N-channel Enhanced VDMOSFETs, is
obtained by the high density Trench technology which reduce the
conduction loss, improve switching performance and enhance the
avalanche energy. This device is suitable for use as A load switch and
PWM applications. the package form is PDFN5*6, which accords with the
RoHS standard.
RDS(ON)Typ 0.75
VDSS 30
ID(Silicon limited) 300
ID(Package limited) 100
PD
Power Dissipation TC = 25 °C 147 W
Derating Factor above 25°C 1.17 W/
PD
±18 V
EAS
a2 Avalanche Energy 625 mJ
VGS Gate-to-Source Voltage
150,–55 to 150 TJ,Tstg Operating Junction and Storage Temperature Range
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Electrical Characteristics(Tj= 25 unless otherwise specified):
Min. Typ. Max.
30 -- --
-- -- 1
-- -- 100
-- -- 100
-- -- -100
Min. Typ. Max.
-- 0.75 1
-- 1.2 1.5
0.9 1.35 1.8
Min. Typ. Max.
-- 1.29 --
-- 4849 --
-- 3665 --
-- 565 --
Min. Typ. Max.
-- 20 --
-- 20.4 --
-- 72.8 --
-- 23.6 --
-- 92.5 --
-- 10.7 --
-- 24.6 --
Symbol Parameter Test Conditions Units
OFF Characteristics
HGQ011N03A-G ®
Rating
VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250µA V
VDS =30V, VGS= 0V,
Tj = 25
Units
Symbol Parameter Test ConditionsRating
Units
VGS=10V,ID=19A mΩ
Dynamic Characteristics
VGS=4.5V,ID=19A
ParameterSymbol Test ConditionsRating
ON Characteristics
IDSS Drain to Source Leakage Current µAVDS =24V, VGS= 0V,
Tj = 125
IGSS(F) Gate to Source Forward Leakage VGS=18V nA
RatingUnits
Output Capacitance
mΩ
VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µA V
RDS(ON) Drain-to-Source On-Resistance
IGSS(R) Gate to Source Reverse Leakage VGS=-18V nA
Symbol Parameter Test Conditions
td(OFF) Turn-Off Delay Time
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
Resistive Switching Characteristics
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz Ω
Ciss Input Capacitance
Coss
VGS = 0V
VDS = 15V
f = 1.0MHz
pF
VGS=10V
Rg=6Ω
VDD=15V
Id=50A
ns
tr Rise Time
VGS = 10V
VDD=15V
Id=19A
nCQgs Gate to Source Charge
Qgd Gate to Drain (“Miller”)Charge
tf Fall Time
Qg Total Gate Charge
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10 2020V01
HGQ011N03A-G ®
Min. Typ. Max.
-- -- 100
-- -- 400
-- -- 1.2
-- 83.2 --
-- 116.48 --
Notes:
a1:Repetitive rating; pulse width limited by maximum junction temperature
a2:L=0.5mH,Ias=50A Start TJ=25
a3:Recommend soldering temperature defined by IPC/JEDEC J-STD 020
Source-Drain Diode Characteristics
Symbol Parameter Test ConditionsRating
Units
IS Continuous Source Current (Body Diode)
ISM Maximum Pulsed Current (Body Diode)
Symbol Parameter
Pulse width tp≤300µs,δ≤2%
nC
Units
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Max.
0.85
62.5
A
A
IS=19A,VGS=0V V
nsIS=19A
di/dt=100A/us,
VGS=0V
TC = 25 °C
/W
/W
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
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HGQ011N03A-G ®
1
Characteristics Curve:
Figure 5 Maximum Effective Thermal Impedance , Junction to Case
Figure 3. Maximum Continuous Drain Current vs Case
TemperatureFigure 4. Typical output Characteristics
Figure 1 . Maximum Safe Operating Area Figure 2. Maximum Power Dissipation vs Case Temperature
1
10
100
1000
0.1 1 10 100
I D,D
rain
Cu
rren
t,A
VDS,Drain-to-Source Voltage,V
SINGLE PULSE
TC=25
TJ=150
Operation in This Areais Limited by RDS(on)
DC
10ms
1ms
100μs
10μs
0
20
40
60
80
100
120
140
160
0 25 50 75 100 125 150
PD,P
ow
er
Dis
sip
ati
on
,W
TC,Case Temperature,
0.001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
D=1
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
T , Rectangular Pulse Duration [sec]
Z θJC
,Th
erm
al R
esp
on
se[
/W]
Notes:1.Duty Cycle, D=t1/t22.TJM = PDM*RθJA + TA
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1 1.5 2
VDS,Drain-to-Source Voltage[V]
I D,D
rain
Cu
rre
nt[
A]
Note:
1.250us Pulse Test
2.Tc=25
Vgs=3.5V
Vgs=3.0V
Vgs=2.5V
Vgs=4~10V
0
50
100
150
200
250
300
350
25 50 75 100 125 150
I D,D
rain
Cu
rren
t,A
TC,Case Temperature,
This Areais Limited by Package
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HGQ011N03A-G ®
1 1
Figure 8. Drain-to-Source On Resistance vs Drain Current Figure 9. Normalized On Resistance vs Junction Temperature
Figure10. Normalized Threshold Voltage vs Junction
Temperature
Figure 11. Normalized Breakdown Voltage vs Junction
Temperature
Figure 6 Typical Transfer Characteristics Figure 7 Typical Body Diode Transfer Characteristics
0.95
0.96
0.97
0.98
0.99
1
1.01
1.02
1.03
1.04
1.05
-50 0 50 100 150
BV
DS
S,(
No
rma
lize
d)
Dra
in-t
o-S
ou
rce B
rea
kd
ow
n V
olt
ag
e
TJ,Junction Temperature()
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
-50 0 50 100 150
VG
S(t
h),(N
orm
ali
ze
d)
Th
res
ho
ld V
olt
ag
e
TJ,Junction Temperature()
VGS = VDS
ID = 250μA
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1 1.5 2 2.5 3
I D,D
rain
Cu
rren
t[A
]
VGS,Gate-to-Source Voltage[V]
Note:1.VDS=5V2.250us Pulse Test
Tj=25
Tj=150
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
Is,S
ou
rce C
urr
en
t[A
]
VSD,Source-to-Drain Voltage[V]
Tj=25
Tj=150
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50 0 50 100 150
RD
S(o
n),(N
orm
ali
zed
)D
rain
-to
-So
urc
e O
n R
esis
tan
ce
TJ,Junction Temperature()
PULSED TESTVGS = 10V/4.5VID = 19A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
5 15 25 35 45 55 65 75 85 95
RD
S(o
n),D
rain
-to
-So
urc
e O
n
Re
sis
tan
ce,mΩ
ID,Drain Current,A
PULSED TEST
Tj = 25
VGS = 4.5V
VGS = 10V
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 10 2020V01
HGQ011N03A-G ®
1 1
13
Figure 13 Typical Gate Charge vs Gate to Source VoltageFigure 12. Capacitance Characteristics
100
1000
10000
0 10 20 30
Cap
acit
an
ce,p
F
VDS,Drain-to-Source Voltage,V
Crss
Ciss
Coss
f = 1MHzCiss = Cgs+Cgd
Coss = Cds+Cgd
Crss = Cgd
0
2
4
6
8
10
0 50 100 150
Qg,Gate Charge[nC]
Vgs
,Gat
e-t
o-S
ou
rce
VDS=15VID=19A
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 6 of 10 2020V01
HGQ011N03A-G ®
Test Circuit and Waveform
Figure 14. Gate Charge Test Circuit Figure 15. Gate Charge Waveforms
Figure 16. Resistive Switching Test Circuit Figure 17. Resistive Switching
Waveforms
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 7 of 10 2020V01
HGQ011N03A-G ®
Figure20.Unclamped Inductive Switching Test Circuit Figure21.Unclamped Inductive Switching
Figure 18. Diode Reverse Recovery Test Circuit Figure 19. Diode Reverse Recovery Waveforms
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 8 of 10 2020V01
HGQ011N03A-G ®
Package Information:
Values(mm)
SymbolMIN MAX
5.3
6.05
1.5
0.6
4.85
5.6
1.1
0.2
D2
E2
k
b
A
E 5.85 6.25
D1 3.81 4.21
E1 3.33 3.63
0.8 1.2
A3 0.15 0.35
D 5 5.35
L1 0.35 0.65
H 0.45 0.85
e 1.07 1.47
L 0.42 0.82
θ 8° 12°
PDFN5×6 Package
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HGQ011N03A-G ®
1.
2.
3.
4.
When installing the heatsink, please pay attention to the torsional moment and the smoothness of the
heatsink.
Warnings
VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device
from being damaged by the static electricity when using it.
This publication is made by Huajing Microelectronics and subject to regular change without notice.
The name and content of poisonous and harmful material in products
Exceeding the maximum ratings of the device in performance may cause damage to the device, even the
permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80
percent of the maximum ratings of the device.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Add: No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn
Tel: +86 0510-85807228 Fax: +86- 0510-85800864
Marketing Part: Post:214061 Tel: +86 0510-81805277/81805336
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