si-detector macroscopic damage parameters during irradiation from measurements of dark current...

15
Si-detector macroscopic damage parameters during irradiation from measurements of dark current evolution of with fluence Craig Buttar, University of Sheffield collaborators P Booth, I Dawson, PJ Dervan, C Grigson, RS Harper, R Nicholson, University of Sheffield Maurice Glaser, CERN, Alick Macpherson, PSI/CERN

Upload: nora-lucas

Post on 17-Jan-2016

222 views

Category:

Documents


0 download

TRANSCRIPT

Page 1: Si-detector macroscopic damage parameters during irradiation from measurements of dark current evolution of with fluence Craig Buttar, University of Sheffield

Si-detector macroscopic damage parameters during irradiation from measurements of dark current

evolution of with fluence

Craig Buttar, University of Sheffieldcollaborators

P Booth, I Dawson, PJ Dervan, C Grigson, RS Harper, R Nicholson, University of Sheffield

Maurice Glaser, CERN, Alick Macpherson, PSI/CERN

Page 2: Si-detector macroscopic damage parameters during irradiation from measurements of dark current evolution of with fluence Craig Buttar, University of Sheffield

Craig Buttar NSS 2002 2

Outline

• Radiation damage in Si

• ATLAS SCT PS irradiation facility

• Current evolution with fluence

• Results from proton irradiation

• Pion irradiation at PSI

• Results from pion irradiation

• Summary of results-comparison to NIEL

Page 3: Si-detector macroscopic damage parameters during irradiation from measurements of dark current evolution of with fluence Craig Buttar, University of Sheffield

Craig Buttar NSS 2002 3

Radiation effects

• Irradiation by heavy particles: s, ps,… results in displacement of atoms from their lattice sites.– Linear increase in leakage current with fluence: I=D

• Change in effective doping due to donor removal and acceptor creation– type inversion np at ~1013-1014neqcm-2

– Change in depletion voltage, primarily due to effN

At the Large Hadron Collider

•Expect levels ~1.4x1014(1MeV)neqcm-2 in regions closest to interactions-central tacking region of ATLAS and CMS

• Detector irradiation programme at CERN PS

Page 4: Si-detector macroscopic damage parameters during irradiation from measurements of dark current evolution of with fluence Craig Buttar, University of Sheffield

Craig Buttar NSS 2002 4

PS Irradiation setup

30m

Temperatureand currentmonitoring

-7oC Dry N2

Atmosphere

Controlledenvironnmentbox

Proton Beam

Moving Stage

CirculatingChiller Coolant

PC

IEEE 488

RS 232

Detectors

IntelligentMotionController

Ethernet toSMTP server

• Irradiate detectors with voltage applied at ~-70C

• Monitor temperature and current during the irradiation between beam spills

• Small beam spot requires scanning of detectors

• Monitor fluence and uniformity of irradiation

• Measure fluence by activating Al foils

– measure 24Na peak at 1369keV, T1/2=16hrs

– Calibrate counter from secondary emission counter

Page 5: Si-detector macroscopic damage parameters during irradiation from measurements of dark current evolution of with fluence Craig Buttar, University of Sheffield

Craig Buttar NSS 2002 5

Silicon Microstrip DetectorsBarrel detector specifications

Total area 63.6 x 64 mm2

Sensitive area 61.6 x 62 mm2

Thickness 285m

Number of strips 768+2

Pitch 80m

Readout AC-coupled Binary electronics

Page 6: Si-detector macroscopic damage parameters during irradiation from measurements of dark current evolution of with fluence Craig Buttar, University of Sheffield

Craig Buttar NSS 2002 6

Model of bulk current during irradiation

e

Vd

2

ceffeff eNN 0

effNe

Vd

2

At low fluences, depletion depth is constant=> I~

Assume no annealing at ~-7oC

Depletion depth, d

1

At high fluences, depletion depth~=>I~

Current damage: I=D

Change in effective carrier concentration

5.02 e

VAI

Page 7: Si-detector macroscopic damage parameters during irradiation from measurements of dark current evolution of with fluence Craig Buttar, University of Sheffield

Craig Buttar NSS 2002 7

Current evolution with proton fluence

Vb=100V

Page 8: Si-detector macroscopic damage parameters during irradiation from measurements of dark current evolution of with fluence Craig Buttar, University of Sheffield

Craig Buttar NSS 2002 8

Proton Results-power laws

~I

High fluence gives good agreement with:

Results based 90 full-size ATLAS detectors

93.0~ I

Low fluence agreement is less good with

fluence rising sublinearly:

Page 9: Si-detector macroscopic damage parameters during irradiation from measurements of dark current evolution of with fluence Craig Buttar, University of Sheffield

Craig Buttar NSS 2002 9

Proton Results-Damage parameters

-1-117 cm 0018.00630.0 Acm10x)13.084.4()20( Co

Page 10: Si-detector macroscopic damage parameters during irradiation from measurements of dark current evolution of with fluence Craig Buttar, University of Sheffield

Craig Buttar NSS 2002 10

Module currents

4 detectors inModule

Use for on-linedosimetry

Page 11: Si-detector macroscopic damage parameters during irradiation from measurements of dark current evolution of with fluence Craig Buttar, University of Sheffield

Craig Buttar NSS 2002 11

PSI-pion irradiation

• Πe1 beamline, T=191MeV

• Different operation due to beamstructure-switch-off beam to take I-Vs19ns beam with 1ns spacing

• Use ATLAS mini-detectors1cm2, from wafer with full-size detector

• ‘Portable’ cold box, chiller, monitoring system

• Guard and bulk biased seperately

Page 12: Si-detector macroscopic damage parameters during irradiation from measurements of dark current evolution of with fluence Craig Buttar, University of Sheffield

Craig Buttar NSS 2002 12

Pion Irradiation Results

0

2000

4000

6000

8000

10000

12000

14000

16000

18000

0 50 100 150 200 250 300 350 400

fluence (x1012cm-2)

Cu

rre

nt

(nA

)

-10.5

-10

-9.5

-9

-8.5

-8

0

2000

4000

6000

8000

10000

12000

14000

16000

0.00E+00 5.00E+13 1.00E+14 1.50E+14 2.00E+14 2.50E+14 3.00E+14 3.50E+14 4.00E+14

Integrated Fluence (x1012cm-2)

Cu

rre

nt

(nA

)1cm02.007.0)10(~

1-Acm1610x)2.02.1()20(

C

Co

o

fluencehigh - ~

fluence low- ~39.0

99.0

I

I

1.8 NIEL relative tocompare

4.05.2

*

p

Page 13: Si-detector macroscopic damage parameters during irradiation from measurements of dark current evolution of with fluence Craig Buttar, University of Sheffield

Craig Buttar NSS 2002 13

Summary of results

24 GeV protons 300Mev pions

(+20oC) (4.8±0.1)x10-17Acm-1 (1.2±0.2)x10-16Acm-1

Low fluence power law 0.93 0.99

(+20oC) from [6,7] 2.5x10-17Acm-1 4.6x10-17cm-1

(-10oC) 0.063±0.002cm-1 0.07 ±0.02cm-1

High fluence power law 0.50 0.40

Page 14: Si-detector macroscopic damage parameters during irradiation from measurements of dark current evolution of with fluence Craig Buttar, University of Sheffield

Craig Buttar NSS 2002 14

Summary

• A model for current evolution with fluence based on bulk current has been used to analyse detectors currents during irradiations with protons and pions

• The model appears to work well but there are deviations from the expected power laws

• Values of and have been extracted from the data and are larger than other results, but care required when comparing.

• Ratio of alpha agrees with relative NIEL-but need to reduce errors from fluence on pion measurements.

Page 15: Si-detector macroscopic damage parameters during irradiation from measurements of dark current evolution of with fluence Craig Buttar, University of Sheffield

Craig Buttar NSS 2002 15

More work

• Improve model, why are there deviations from the power law ?

• Investigate effect of annealing

• Make measurements at other sites with a range of particle and energies