Sept 2003 1

Nanoelectronicsand

Nanotechnology

Dr. Clifford LauPresident-elect

IEEE Nanotechnology Council703-696-0371c.lau@ieee.org

The presenter is solely responsible for the opinions expressed here.

Sept 2003 2

Scientific research in many disciplines in the earlyto mid 1990s began to approach nanometer scale,although we didn’t call it nanotechnology at the time.

1980 1990 2000

MicroelectronicsPhysicsChemistryMaterialsMolecular biology

Nanotechnology

Historical Perspective

Sept 2003 3

National Nanotechnology Initiative (NNI)

• Afterglow of Sputnik had run its course

• Need to re-energize the next generation S&E

• Interagency working group began planning in 1996

• Support in OSTP

• President Clinton announced NNI in January 2000

• NNI officially began in FY2001

Sept 2003 4

NNI Investment Strategy

• Fundamental nanoscience and engineering research- Nano-Bio systems- Novel materials, processes, and properties- Nanoscale devices and system architectures- Theory, modeling, and simulations

• Grand challenges- Chem-bio detection and protection- Instrumentation and metrology- Nanoelectronics/photonics/magnetics- Health care, therapeutics, diagnostics- Environmental improvement- Energy conversion and storage

• Centers excellence• Research infrastructures• Societal implications and workforce preparation

Sept 2003 5

Research and technology development at the atomic, molecular or macromolecular levels, in the length scale of approximately 1 - 100 nanometer range, to provide a fundamental understanding of phenomena and materials at the nanoscale and to create and use structures, devices and systems that have novel properties and functions because of their small and/or intermediate size. The novel and differentiating properties and functions are developed at a critical length scale of matter typically under 100 nm. Nanotechnology research and development includes manipulation under control of the nanoscale structures and their integration into larger material components, systems and architectures. Within these larger scale assemblies, the control and construction of their structures and components remains at the nanometer scale. In some particular cases, the critical length scale for novel properties and phenomena may be under 1 nm (e.g., manipulation of atoms at ~0.1 nm) or be larger than 100 nm (e.g., nanoparticle reinforced polymers have the unique feature at ~ 200-300 nm as a function of the local bridges or bonds between the nano particles and the polymer).

Nanotechnology Definition(NSET, February 2000)

Sept 2003 6

NNI Participating Agency Programs

NSF Nanocience/engineeering, fundamental knowledge,instrumentation, centers

DoD Information technology, high performance materials,chem-bio-radiological detections

DoC/NIST Measurements and standards, commercializationDoE Energy science, environment, non-proliferationDoJ Diagnostics – crime, contraband detectionsDoT Smart, light weight materials for transportationEPA Environment, green manufacturing of nanomaterialsFDA Food packaging, drug delivery, bio-devicesIntel Comm Detection, prevention of technological surprisesNASA Lighter, smaller adaptive spacecraft, human status

monitors, radiation hardeningNIH Therapeutics, diagnostics, biocompatible materials

miniaturized tools, cellular and molecular sensingNRC Radiological detections, material reliabilityUSDA Biotech for improved crop yields, food packaging

Sept 2003 7

National Nanotechnology Initiative, 2001

FY2000 FY2001 FY2002 FY2003 FY2004(enacted) (request) (request)

• NNI was launched in FY2001, with the goal to double the FY00 baseline of $270M. Since then federal investment in nanotechnology has tripled.

NSF $97M $150M $204M $221M $249MDoD $70M $123M $224M $243M $222MDoE $58M $88M $89M $133M $197MNASA $4M $22M $35M $33M $31MNIH/HHS $32M $40M $59M $65M $70MNIST/DoC $8M $33M $77M $69M $62MEPA $5M $6M $6M $5MDHS(TSA) $2M $2M $2M $2MUSDA $1M $10MDOJ $1M $1M $1M

Total $270M $464M $697.1M $773.7M $849.5M

Sept 2003 8

USA5395

France1317

Germany1949

England906

Italy631

Russia854

Singapore209

Switzerland372

Japan2289

Korea760

Taiwan282

China2474

India461

Australia236

Canada382

Mexico166

Brazil285

Sweden297

Total Worldwide- 18538

Israel273

CY2002 PUBLICATION COUNT(By Keyword Nano*, 2/2003)

Science Citation Index of 5300 Journals

Global Participation in Nanoscience

Sept 2003 9

Center Name Principal Investigator Institution

NSFNational Nanofabrication Users Network (NNUN)

Hu Univ. of California Santa BarbaraTiwari Cornell UniversityHarris Howard UniversityFonash Pennsylvania State UniversityPlummer Stanford University

Computational Nanotechnology Network (NCN)Lundstrom Purdue

DOEIntegrated NanoSystems Michalske Sandia and Los Alamos National LaboratoriesNanostructured Materials Lowndes Oak Ridge National Lab.Molecular Foundry Alivisatos Lawrence Berkeley National LaboratoryFunctional Nanomaterials Hwang Brookhaven LaboratoryNanoscale Materials Bader Argonne

Nanotechnology User Centers and Networks

Murday, NRL #140a 2/03

Sept 2003 10

Name Principal Investigator Institution

NSF

NSEC (Nanoscale Science and Engineering Center)

Nanoscale Systems in Information Technologies Buhrman Cornell University

Nanoscience in Biological and Environmental Engineering Smalley Rice University

Integrated Nanopatterning and Detection Mirkin Northwestern University

Electronic Transport in Molecular Nanostructures Yardley Columbia University

Science of Nanoscale Systems and their Device Applications Westervelt Harvard University

Directed Assembly of Nanostructures Siegel Rensselaer Polytechnic Institute

STC (Science and Technology Center)

Nanobiotechnology, Science and Technology Center Baird Cornell University

MRSEC (Materials Research Science and Engineering Centers)

Nanoscopic Materials Design Groves Univ Virginia

Nanostructured Materials Chien Johns Hopkins University

Semiconductor Physics in Nanostructures Doezema Univ Oklahoma and Arkansas

Nanostructured Materials and Interfaces Eom Univ Wisconsin Madison

Quantum and Spin Phenomena in Nanomagnetic Structures Liou Univ Nebraska Lincoln

Research on the Structure of Matter Bonnell Univ Pennsylvania

DOD

Institute for Soldier Nanotechnologies Thomas Mass. Inst. of Technology

Center for Nanoscience Innovation for Defense Awschalom UC Santa Barbara

Nanoscience Institute Prinz Naval Research Laboratory

NASA

Institute for Cell Mimetic Space Exploration Ho UCLA

Institute for Intelligent Bio-Nanomaterials Junkins Texas A&M

& Structures for Aerospace Vehicles

Bio-Inspection, Design and Processing of Aksay Princeton

Multi-functional Nanocomposites

Institute for Nanoelectronics and Computing Datta Purdue

Centers with Nanotechnology Focus

RICE

NORTHWESTERN

Murday, NRL #140b 1/03

Sept 2003 11

NRL Nanoscience InstituteFacility and Program

• NanoassemblyNanofilaments: Interactions, Manipulation and AssemblyChemical Assembly of Multifunctional ElectronicsDirected Self-Assembly of Biologically-Based NanostructuresTemplate-Directed Molecular ImprintingChemical Templates for Nanocluster Assembly

• Nano-opticsPhotonic Bandgap MaterialsOrg. and Bio. Conjugated Luminescent Quantum DotsOrganic Light Emitting Materials & DevicesNanoscale-Enhanced Processes in a Quantum Dot Structures

• NanochemistryFunctionalized Dendrimeric MaterialsPolymers and Supramolecules for Devices

• NanoelectronicsCoherence, Correlation and Control in NanostructuresNeural-Electronic Interfaces

• NanomechanicsNano-Elastic Dynamics

• Collaborations Developing with universities, NSWC Indian Head, ARL Adelphi,

NAVAIR

Open Fall 2003

Dr. Gary Prinz, NRL Code 1100 http://nanoscience.nrl.navy.mil/

Sept 2003 12

DoD Perspective

• Nanoscience and nanotechnology continue to be one of the top priority research programs within DoD

• Nanotechnology will impact practically all areas of interest to DoD

• Potential for payoff to DoD is great, and is worth the investment

Sept 2003 13

DoD Investment on Nanotechnology

FY2000 FY2001 FY2002 FY2003 FY2004

DoD $70M $123M $180M $243M $222M

OSD $ 28MDARPA $142MArmy $ 29MNavy $ 31MAir Force $ 13M

OSD $ 28MDARPA $117MArmy $ 30MNavy $ 29MAir Force $ 18M

Planned

Note: FY04 budget is estimate only, with highuncertainty in DARPA investment on nano.

Sept 2003 14

* NANOELECTRONICS/NANOPHOTONICS/NANOMAGNETICSNetwork Centric WarfareInformation DominanceUninhabited Combat VehiclesAutomation/Robotics for Reduced ManningEffective training through virtual realityDigital signal processing and LPI communications

* NANOMATERIALS “BY DESIGN”High Performance, Affordable MaterialsMultifunction, Adaptive (Smart) MaterialsNanoengineered Functional MaterialsReduced Maintenance costs

* BIONANOTECHNOLOGY - WARFIGHTER PROTECTIONChemical/Biological Agent detection/destructionHuman Performance/Health Monitor/Prophylaxis

DoD Focused Areas in NNI

Sept 2003 15

DoD Programs in Nanotechnology

• ArmyNanostructured polymers, quantum dots for IR sensing, nanoengineered clusters, nano-composites,Institute for Soldier Nanotechnology (ISN)

• NavyNanoelectronics, nanowires and carbon nanotubes, nanostructured materials, ultrafine and thermalbarrier nanocoatings, nanobio-materials and processes, nanomagnetics and non-volatile memories,IR transparent nanomaterials

• Air ForceNanostructure devices, nanomaterials by design, nano-bio interfaces, polymer nanocomposites,hybrid inorganic/organic nanomaterials, nanosensors for aerospace applications, nano-energeticparticles for explosives and propulsion

• DARPABio-molecular microsystems, metamaterials, molecular electronics, spin electronics, quantuminformation sciences, nanoscale mechanical arrays

• SBIRNanotechnologies, quantum devices, bio-chem decontaminations

• OSDMultidisciplinary University Research Initiative (MURI), DEPSCoR, NDSEG

Sept 2003 16

FY01-06 DURINT Research Program

Investigator Prime Institution Research Topic

Josef Michl Univ. of Colorado Nanoscale Machines and MotorsMehmet Sarikaya Univ. of Washington Molecular Control of Nanoelectronic and Nanomagnetic

StructuresMichael Zachariah Univ. of Minnesota Nano-energetic MaterialsHong-Liang Cui Stevens Inst. of Tech. Characterization of Nanoscale Elements, Devices, SystemsRichard Smalley Rice Univ. Synthesis, Purification, and Functionalization of Carbon

NanotubesRandall Feenstra Carnegie Mellon Univ. Nanoporous Semiconductors – Matrices and SubstratesSubra Suresh MIT Deformation, Fatigue, and Fracture of NanomaterialsHoria Metiu UC Santa Barbara Nanostructure for CatalysisMary C. Boyce MIT Polymeric NanocompositesParas Prasad SUNY at Buffalo Polymeric Nanophotonics and NanoelectronicsTerry Orlando MIT Quantum Computing and Quantum DevicesJames Lukens SUNY, Stony Brook Quantum Computing and Quantum DevicesChad Mirkin Northwestern Univ. Molecular Recognition and Signal TransductionAnupam Madhukar USC Synthesis and Modification of Nanostructure SurfacesGeorge Whitesides Harvard Univ. Magnetic Nanoparticles for Application in Biotechnology

Sept 2003 17

Multidisciplinary University Research Initiative (MURI)

FY Investigator Institution Research Topic

98-03 J. Sturm Princeton Univ. Engineering of Nanostructures and Devices98-03 A. Epstein MIT Microthermal Engines for Compact Powers98-03 B. Zinn Georgia Tech Microthermal Engines for Compact Powers98-03 S. Goodnick Arizona State U. Low-power, High Performance Nanoelectronic Circuits98-03 James Univ. Minnesota Computational Tools for Design of Nanodevices99-04 Brueck U. New Mexico Nanolithograph99-04 Datta Purdue Univ. Spin Semiconductors and Electronics00-05 Mabuchi Caltech Quantum Computing and Quantum Memory00-05 Shapiro MIT Quantum Computing and Quantum Memory01-06 Bruce Dunn UCLA 3-D Nanoarchitectures for Electrochemical Power Source01-06 Ken Poppelmeier Northwestern 3-D Nanoarchitectures for Electrochemical Power Source01-06 Shelton Taylor Univ Virginia Multifunctional Nano-engineered Coatings01-06 Ed Cussler Univ. Minnesota Multifunctional Nano-engineered Coatings02-07 I. Schuller UC San Diego Integrated Nanosensors02-07 D. Lambeth CMU Integrated Nanosensors03-08 Dan van der Weide Wisconsin Nanoprobes for Laboratory Design Instrum. Research03-08 Lukas Novotny U. Rochester Nanoprobes for Laboratory Design Instrum. Research03-08 William Doolittle Georgia Tech Next Generation Epitaxy for Laboratory Instru. Design03-08 Jimmy Xu Brown Univ. Direct Nanoscale Conversion of Biomolecular Signals

Sept 2003 18

Nanoimprint LithographyPrinceton University, Professor Stephen Chou

Imprint mold with 10nmdiameter pillars

10nm diameter holesimprinted in PMMA

10nm diameter metaldots fabricated by nano-imprint lithography

Sept 2003 19

• Biological agent detection– PCR-free bioagent recognition

– DNA/Nanosphere-based• Anthrax detection in solution

– 30 nucleotide region of a 141-mer PCR product (blue dot)

– Sensitivity: <10 femtomole– Detect single BP mismatch

• Anthrax detection on substrate– Agent binds Au cluster

– Ag: 105 amplification

– Amount: grey scale

– Tested• Dugway PG, 2001

– 32 parallel tests in 1.5 hrs!

– Active technology transfer• Nanosphere (spin off company)

• Medical & industrial interest

Colorimetric Detection of Anthraxin Solution

Cluster Engineered MaterialsChad Mirkin, NWU

1)

2)

Denatured BWA genomic DNA

BA = Bacillus AnthracisFT = Francisella Tularensis

BA probe FT probe

FT probe BA probe

1 ng

Au Au

Ag

Ag+

hydroquinoneAg(s)

quinone

Au

Probe 1

Protective Antigen

Probe 2

P robe 1 + PA product

P robe 2 + PA p roduct

P robes 1 & 2 + PA p roduc t

P robes 1 & 2 + LF p roduc t

P robes 1 & 2 + phospha te bu ffe r

P robes 1 & 2 + P C R m ix tu re

Colorimetric Detection of Anthraxon Substrate

Sept 2003 20

RESEARCHERS

• U CO• Northwestern U• NIST: MD and CO (no MURI funds)

MOLECULAR MACHINES DURINTProf. Josef Michl, Univ. of Colorado

COLLABORATIONS AND TRANSITIONS

• Collaboration with NIST, MD: horizontal rotors prepared with and without “paddle” for NIST Microfluidics Pgm

• Collaboration with NIST, CO: molecular rotor prepared for NIST single electron transitor program

• Collaborations with industry: IBM will do electron beam lithography and Zyvex is supplying patterned surfaces

Proposed Laser ProtectionUsing Molecular Machines

RESEARCH GOALS

• Use computation to guide design• Design and build molecular machine

components• Attach the machines to surfaces• Coherently operate the machines• Characterize the nanoscale properties• CHALLENGES: All of the above

ARMY/DOD RELEVANCE

• Laser protection• Power generation• Chem/bio agent detection• Molecular memory, electronics and devices• Microfluidics• Control of flow at surfaces

Sept 2003 21

Nano-Systems Energetics (DURINT)P.I.: Michael Zachariah, U. Minnesota, mrz@me.umn.edu

http://www.me.umn.edu/~mrz/CNER.htm

Research Accomplishments

• Developed continuous flow reactor for nanoparticle production and passivation (copy at ARL-WMRD)• Formulated model for nanoparticle formation and growth• Designed experiments for characterization of size, composition and reactivity of nanoparticles• Computed oxidative reactions of energetic materials (Nitromethane, HMX and FOX-7) on aluminum surfaces

Objective

Develop new methods for and understanding of nano-scale energetic materials

Synthesis, Characterization, Reactivity

Methods for nanoparticle growth and surface passivation. Sol-Gel methods for generation of nanostructuresModeling of particle formation from thermal plasmas. Methods for nanoparticle characterization Thermochemistry of nanoparticles and nanostructures. Nanoparticle oxidation kinetics. Characterize rates of energy release for nanostructures. Measurement of solid-solid exothermic reactions. Computational chemistry/physics of nanostructures.

CNER: Center for Nano-Energetics Research

Research Areas

Nanoscale Energetic Materials

Sept 2003 22

Approach

•prove molecular circuit programming through simulation

•predict properties of new molecules

•synthesize new molecules

•self-assemble in nanocells

•program and package nanocells

April-June 01 Accomplishments:

•Half-adder, inverter and NAND simulated

•25 new molecules synthesized

•Nanocell wafers (e-beam) designed and in fab

•Dry box ready for assembly

•Test bed nanocells (optical) in fab

•60 nm Au particle deposition developed

•Molecule-based circuits designed

•New Molecules proposed for memory

Impact & Transition: Molecular Electronics Corp., Motorola

Technology Issues: Nanocell assembly, programming, and packaging

Nanocell Approach to a Molecular ComputerJ. Tour (PI, Rice U.), D. Allara and P. Weiss (Penn State), P. Franzon (NC State), P. Lincoln

(SRI), M. Reed (Yale), J. Seminario (S. Carolina), R. Tsui, H. Goronkin, I. Amlani (Motorola).

Objectives: Construct logic devices using programmable Nanocells

A

1

2.1V

-.05V

Input A

time (s)0 60.0

930nA

-40nA

Output 1

time (s)0 60.0

W0

W1

R1

R0

RW0

RW1

RD0

RD1

NO2

O2N

NC

Sept 2003 23

Theoretical Analysis, Design, and Simulation of the Nanocell

• Calculated electrical characteristics for two new molecules proposed during the kick-off meeting: the dioxo with three rings (1), and the dinitro with four rings (2).

• First realistic molecular simulation of a fragment of the nanocell (below).

• New candidates for one-year room temperature memory proposed (lower right).

C

CN

N

O

N

O

N

C

NC

N

H

H

S-R

NO2

H2N

S-R

R1

R1

S-R

R = H, AcR1, R2 = H, NO2, NH2

Sept 2003 24

DURINT - Nanoporous SiC and GaNStrain Relief During Epitaxy of GaN on porous SiC

Prof. Randall Feenstra, CMU

Objective: Relieve the strain which occurs when

films are grown on substrates with mismatched lattice constant.

----------------------------------Results: GaN films have been grown by MBE on

porous SiC substrates with a range of surface pore densities. Strain in the films is characterized by stylus profilometry. Significant strain relaxation is found, with the residual strain being about 3 times smaller than for films grown on nonporous substrates.

----------------------------------Interpretation:For MBE growth, pores from the SiC

continue into the GaN. These pores are “stress concentrators”, acting as nucleation sites for half loop dislocation as seen by TEM. These half loops then propagate and relieve the strain in the film.

TEM image of MBE-grown GaN on porous SiC

Strain in GaN film vs. surface pore density

Sept 2003 25

Objectives• To understand and control the materials chemistry and physics of nanotubes and nanotube-based materials;• To develop new nano-composites with enhanced mechanical, thermal and electrical properties;• To fabricate nanotube-based electron field emission devices and evaluate their properties for technological applications;• To investigate energy-storage capability of carbon nanotubes;• To fabricate nanotube NanoElectroMechanical Systems (NEMS).

Carbon Nanotube Based Materials and DevicesUniversity of North Carolina at Chapel Hill

URL: http://www.physics.unc.edu/~zhou/muri

Major Accomplishments

Multidisciplinary Approach

DOD RelevanceNew materials and technology for structural reinforcement, energy storage, electron emission, and nano-device applications.

•Established materials synthesis and processing capability•First observation of rolling at nanometer scale, including manipulation and simulation of NEMS friction•Measured and simulated the electro-mechanical properties of carbon nanotubes•Synthesized nanotube-based polymer composites•Fabricated nanotube field emission devices and demonstrated high current capability (4A/cm2)•Performed the first 13C NMR measurement of the electronic properties of the carbon nanotubes. •Demonstrated high Li storage capacity in processed SWNTs.

Research Highlights

Anode-Cathode Distance (m)

0 40 80 120 160

Vo

ltag

e (

V)

0

400

800

1200

1600

2000

10 mA/cm2

J = 0.5 A/cm2

0.1 A/cm2

Carbon nanotube field emitters provide high current density and stability

Rolling and Friction at the atomic scale

•Materials synthesis, assembly, functionalization; •Nanometer-scale manipulation and measurements of transport, electronic and mechanical properties; •Spectroscopic characterization and studies; •Large-scale ab inito and empirical molecular dynamics simulation and theoretical calculations.

MURI TeamUNC: Physics, Chemistry, Materials Science and Computer ScienceNCSU: Physics and Materials ScienceDuke: Chemistry Industrial Partners: Lucent Technologies, Raychem Co. and Ise Electronics

Sept 2003 26

An Environmentally Compliant, Multi-Functional Coating for Aerospace Using Molecular and Nano-Engineering Methods

University of Virginia, Prof. Shelton Taylor

APPROACH• Multi-coat system built upon thermally

spayed amorphous Al-alloy cladding

• Combinatorial chemistry and nano-encapsulation to identify/deliver non-chromate inhibitors

• Colloidal crystalline arrays, and other molecular probes to provide sensing

DOD TECH PAYOFF• Will provide significant

advancement in corrosion protection, life cycle costs, and mission safety

GOALS/OBJECTIVES• To develop a new multi-functional

coating system for military aircraft• Coating will sense corrosion and

mechanical damage• Initiate mitigation response to

mechanical and chemical damage• Provide corrosion protection and

adhesion using environmentally compliant materials

Nano-crystalline cladding

Non-chromate inhibition

AA2024substrate

Sensing

Sept 2003 27

Program Goal:

Transforming a new type of carbon, single wall nanotubes (SWNTs) into highly organized bulk materials

DoD Impact:

High strength, light weight fibers

Structures with controlled dielectric properties

Potentials in hydrongen storage and electrode technology

Activities Underway:•Understand chemistry & kinetics of the HiPCO process for SWNT synthesis•Development of purification methods for SWNT•Mobilization of SWNTs in solutions and/or suspensions•Mechanical and molecular modeling of sidewall chemistry and tube/polymer interactions•Spinning of composites with nanotube fibers

Synthesis, Purification, and Assembly of SWNT Carbon Fibers

Prof. Richard Smalley, Rice University

Sept 2003 28

Quantum Well IR Sensors

• Advanced Photodetectors– Quantum Well Infrared Photodetectors

• Use electronic band engineering and nanofabrication techniques

• Multispectral IR imaging

– Uncooled Infrared Detectors• Uses nanofabrication and advanced

materials

– Nanoparticle-Enhanced Detection• Increase light detection by 20X

• Target Designation and CCM– IR Lasers for Target Designation

• Need: Compact, 300K IR lasers

• Solution: Quantum cascade lasers

• Impact on Future Army– Smart, multispectral sensors coupled

with ATR for target ID

– Shorter logistics tail

spacer layerd

Light

Silicon waveguideSiO2

Silicon

20

15

10

5

0

En

ha

nce

me

nt

1000900800700600500400

Wavelength (nm)

(c) 108 nm

(b) 66 nm

(a) 40 nm

Mean Particle Diameter

Nanoparticle Enhanced Detection

Quantum Well Infrared Photodetectors

AH-64 Apache Hellfire

Sept 2003 29

Nanometric Energetic MaterialsResearch at AFRL Munitions Directorate

• Scale Differences…– Very High Specific Surface Area

• 4- 6 Orders of Magnitude Increase

– Short Diffusion Path-Length in Burning

• … Can Lead to Important Performance Enhancements

– Complete Burning of Fuel Particles– Accelerated Burn Rates– Ideal Detonation in Fueled Explosives

AlAl

Al2O3

25 nm29,995nm

Surface Area = 0.1m2/g Surface Area = 74 m2/g

2.5 nm

Al2O3

2.5 nm

Al

EnergeticCoating

• Coating Benefits...– Intimate Contact Between Fuel, Energetic

Material– Fewer Problems with Processing, Handling– Material Coating Thickness on Nano-fuel

Particles Is Nano-scale• Fewer Defects, Better Crystals

• Improved Insensitivity Properties

New approach for energetic materials: nano-thick energetic material coating-layer on nanoscale aluminum fuel particles gives improved, intimate mixing in energetic formulations, and very high specific surface area. These effects support very high burn rates.

30 Micron Particle 30 nm Particle30 nm Aluminum Particles Each

Coated with Energetic Material Layer

Sept 2003 30

Institute for Soldier NanotechnologiesProf. Ed Thomas, MIT

Investment Areas• Nanofibres for Lighter Materials• Active/reactive Ballistic Protection (solve energy

dissipation problem)• Environmental Protection• Directed Energy Protection• Micro-Climate Conditioning• Signature Management• Chem/Bio Detection and Protection• Biomonitoring/Triage• Exoskeleton Components• Forward Counter Mine

University Affiliated Research Center• Investment in Soldier Protection• Industry partnership/participation• Accelerate transition of Research Products

Goals• Enhance Objective Force Warrior survivability• Leverage breakthroughs in nanoscience &

nanomanufacturing

Supramolecular Self-Assembly

Mesoscopic Integration

Molecular Scale Control

Nano-Scale Devices

Accomplishments• Ribbons made of electroactive polymers• Artificial muscle and molecular muscle• Organic/inorganic multilayers for optical

Communications• Tunable optical fibers• Dendrimers for protective armors• Conducting polymer for bio-status monitors

Sept 2003 31

The evolution of computer technology over the last few decades has revolutionized computational capability

Faster electronicsLower power consumptionLarger data handling capabilitiesMore complex information processing

The era of Nanoelectronics (<100 nm) is forecast (ITRS) to begin within 3 years (2005)

Why Nanoelectronics?

Shrink volume by 108

Improve power efficiency by 108

ENIAC~1950

Jornada~2000

Stan Williams, HP

Murday, NRL #168 3/02

Sept 2003 32

CMOS Scaling Challenges

Source: Jim Hutchby, SRC

Sept 2003 33

Moore’s Law: Scaling and Microelectronics

Brick WallBarrier

Optical Lithography

EUV,e-beam,x-Ray

Time

Source: Bob Trew, NC State

Sept 2003 34

Microelectronics Nanoelectronics

Evolutionary

Revolutionary

Two Paths

(Including photonics,optics, magnetics, etc.)

Sept 2003 35

On the Evolutionary Path

• Silicon technology will continue down the scaling path for at least another decade if not two.

• In reality, we are already in the regime of nanoelectronics.• New techniques will be invented to overcome some of the

limitations of optical lithography, short channel effects, etc.• New device architecture will be invented to continue the

down-scaling, e.g. vertical devices.

• However, scaling cannot continue forever.

• Still a lot of work on circuit and system architectures to exploit the gazillions of devices on a chip.

• Then there are multichip modules, flip chip, 3-D, etc.• Silicon technology is not going away for a long time.

Sept 2003 36

DARPA HGI Program, PI - K. Saraswat (Stanford U.)

N+/P + poly

Insulating Substrate

GateDrain Source

L

Channel Film

Gate Dielectric

Gate Electrode

N+/P + poly or Silicide

Transistor

9 nm Vertical Field Effect Transistor

Sept 2003 37

Revolutionary Path

• Molecular electronics• Spintronics• Single Electron Transistors• Quantum Cellular Automatons• Nanotube transistors• Carbon nanotube switching devices• Quantum nanodots• Nanophotonics• Nanomagnetics• Entangled photon memories• Others

Sept 2003 38

Carbon Nanotube Transistors

Single nanotube transistor that operates at room temperature. This three-terminal device consists of an individual semiconducting nanotube on two metal nanoelectrodes with the substrate as a gate electrode.

The nanotube is ~5 nm in diameter

Nanotube Field Effect TransistorIBM Research

Fabricated, tested, and functional

Delft University of Technology, Professor Cees Dekker

Sept 2003 39

Figure 1. Suspended nanotube device architecture. (a) Schematic illustrating a periodicsuspended nanotube crossbar array with a device element at each crossing point. The substrateconsists of a conductor (e.g., highly doped silicon, dark-grey) that terminates in a thin dielectriclayer (e.g., SiO2, light grey). The lower nanotubes (dark grey cylinders) are supported directly onthe dielectric film, while the upper nanotubes are suspended by patterned inorganic or organicsupports (dark grey blocks). The device elements at each crossing have two stable states: off andon. The off state (b) corresponds to the case where the nanotubes are separated, while the on state(c) is when the tubes are in vdW contact. A device element is switched between off and on statesby applying voltage pulses that transiently charge the nanotubes to produce attractive or repulsiveforces. After switching, the junction resistance can be read by measuring the current through thejunction at a bias voltage much smaller than the voltage necessary for switching. (b) and (c)correspond to the calculated shapes (see text and Fig. 2) of off and on states for a 20 nm (10,10)SWNT, where the initial separation is 2.0 nm.

Lieber, Harvard U.

Sept 2003 40

On the Revolutionary Path

• Revolutionary nanoelectronic devices (chips) are a long way off.• Devices/chips must be stable, reproducible, and low cost in mass

production.• Devices/chips must have reliable input/output signals and

interconnections.• New circuit and system architectures must be developed to

match the nanoelectronic devices.• Devices/chips must be designable, testable, verifiable, and easy

to package.• Devices/chips must allow for heat dissipation and removal.• First generation revolutionary nanoelectronics, if and when it is

realizable, will be nitch applications, e.g. high density memories.• For random logics, silicon technology will be hard to displace.• Reliability and manufacturability are as important if not more so

as speed and performance.

Sept 2003 41

CNT FED Display; Zhou, UNC

GMR Reading Head; IBM

INFORMATION NANOTECHNOLOGY

Field-effect transistor based on a single Field-effect transistor based on a single 1.6 nm diameter carbon nanotube1.6 nm diameter carbon nanotube

STORAGE

DISPLAY

LOGIC CNT FET; Avouris, IBM

TRANSMISSION

Superlattice VCSEL; Honeywell

AU Nanocluster Vapor Sensor;Snow NRL, MSI/SAWTEK

SENSE

Sept 2003 42

Architecture

Non-classical

CMOS

Memory

Logic

Time

Emerging Technology Sequence

StrainedSi

VerticalTransistor

FinFET Planardouble gate

Phase ChangeNano FG SET Molecular

Magnetic RAM

SETRSFQ QCA Molecular

RTD-FET

Quantumcomputing

CNNDefectTolerant

QCA

3DIntegration

FD SOI

Molecular

EmergingTechnology

Vectors

Hutchby, SRC

Sept 2003 43

Commercial Products

• Tools for characterization (FM, SPM, STM, etc.)• Tools for fabrication (NIL, DPL, etc.)• Carbon nanotubes by the pound• 65nm VLSI chips• Corrosion resistant ceramic nanoparticle coatings• Embedded nanotube polymer matrix materials• Sunscreen with TiO2 nanoparticles• Nanoenergetic particles• NEMS devices• Flat panel displays (soon)

Sept 2003 44

• Nanotechnology is here to stay

• Worldwide investment on nanotechnologyContinues to increase

• Basic research is leading toCommercial products

• Frontier for next industrialrevolution

Summary