Sensors

Frank Hartmann for the Sensor WG28.04.2010 CMS Upgrade Days

• HPK submission (main current topic)• Possible next submission• 3D sensors for innermost layers

• Sintef (sensors under test)• CNM (sensors under design)

HPK Submission                   

  substrate type FZ 200umMCZ

200um FZ 100um epi 100um epi 75um FZ 300um Total  

  & Active Thickness carrier thinning carrier  

   

   

  P-on-N Production 6 6 6 6 6 6 36  

   

  N-on-P Production p-spray 6 6 6 6 6 6 36  

   

  N-on-P Production p-stop 6 6 6 6 6 6 36  

   

  2'nd metal production P-on-N 6 6  

   

  2'nd metal production N-on-P p-stop 6 6  

   

  2'nd metal production N-on-P p-spray 6 6  

   

   

  Total 36 18 18 18 18 18 126                     

Many different • technologies• thicknesses• geometries• structures with different measureables

Choice of technology

Cutting Work Packages so far

• Pixel• Multi-geometry strips• Multi-geometry pixel• Baby_std• Baby_PA• Baby_Strixel• Diodes• Test-structures• Add_Baby aka Lorentz angle sensor

– Lorentz Angle measurement– Neutron and proton irradiation

cross calibrationDiodes to be cut further (backup slides)

All cut pieces come in an individual envelope

~ 30 pieces per wafer 3800 pieces

Tentative Schedule• Initial Test and Campaign description September 2009• We started ~monthly meetings in January

– More iterations of test descriptions– Next one: 04.05.2010

• Final design approved by CMS: 02.02.2010• Double Metal design delivered to HPK:26.03.2010• Start Delivery to CERN: End of June

– End Delivery: ~Mid-End August??? (my guess)

• Ship sensors to institutes: Beginning of July • First full pre-irradiation measurement: August-September• First Irradiation: End of September• …• End of Campaign: End of 2011 = 1.5 y of campaign

Not all institutes are ready yet!

All measurement data will be handled by the Lyon database (former construction DB)

Commitments, so far  baby_std

Multi strip

multi pixel strixel PA TS pixel

Lorentz angle Diodes SIMS TB   comments

  help appreciated 80% 80% 100% 100% 100%help 

needed  not 

defined logistics80% for strixel and PA seems more 

or less okPSI             50%            Purdue             50%            CERN 20% 100% 100%           xxx%???    DB xxx~30%

Karlsruhe 50-100% annealing 

(100% strip)     30% 30% crossC   100% 10%        Vienna       crossC crossC 100%              HH annealing study?           interested   xxx%     xxx~30%Perugia       50+% 50+%               p-cross calib with LA-sensors????Louvain                         n-irrad cross calib with LA sensors!FNAL   50% 50%       interested            

Firenze  % strip testing                    

also strip measurement on PS, together with CENR

                           Rochester                          Zeuthen                          Bari                          Brown                          Santander                          Aachen                          Padova                          Helsinki                     to do   see todayLyon                       DB  

THE CAMPAIGN

CalibrationRadiationTests; examples only

Institute IV / CV stripmeasurements TS

Vienna successful successful successful

Louvain successful strange Rpoly x

Hamburg successful successful successful

DESY Zeuthen successful successful successful

Bari successful successful x

Rochester successful missing Cint, Rint, Pinhole; bad Ileak x

Fiorentino successful successful successful

CERN successful successful some missing structures

Karlsruhe successful successful successful

Santander successful Missing Ileak, Pinhole successful

Fermilab successful x successful

non-irradiated structureCalibration campaign

irradiated structureInstitute

Structure received IV / CV Strips, ramps TS

Vienna X successful successful successful

Louvain X x x x

Hamburg X successful successful x

DESY Zeuthen x x x

Bari X x x x

Rochester x x x

Fiorentino x x x

CERN X x x x

Karlsruhe X successful successful successful

Santander x x x

Fermilab x x x

Calibration campaign

Mixed irradiations I Mixed radiations with full

annealing evaluation Neutron fluence a bit adapted

Some intermediate proton/neutron only results

Full material info from diodes

0 1 0 2 0 3 0 4 0 5 0 6 0

1 E 1 4

1 E 1 5

1 E 1 6

1 E 1 7

Flu

en

ce in

cm

-2

R adia l position in cm (at z=0cm )

C h. H adr . N eutrons T ota l

L = 3000fb-1

Small subset

Proton dominated

Neutrondominated

Mixed radiations II

p-irrad (KA)(e.g. 15x1014)

n-irrad (Ljubljana)(e.g. 6x1014)

Short annealing- measuring

Short annealing- measuring

p-irrad (KA)(e.g. 15x1014)

n-irrad (Ljubljana)(e.g. 6x1014)

Wafer with bothp- & n- irradiation

Full measurement:Test beam (some)Long term annealing (many steps, many measurments

• p- & n- fluences defined by expectation for the different radii (with some adaptations) e.g. 15p+6n equals to situation @ R=15cm

• To save money and be efficient, not the real full half moon will be irradiated.• This we will do with 4-5 wafers leaving 1-2 virgins

To investigate the pure particle  (p&n) dependence

To investigate the mixed (p+n) (real) dependence

2 diodes out for full long term annealing

Initial measurements

E.g. Multi-geometry strips, electrical

Goes to irradiation

Goes to Vienna Box

Pitch adaptor

12×2 cables

To the instruments

bonds solder

31 strips in each group bonded togetherfor Cinterstrip and Rinsterstrip measurements

IV/CV

clamps

Biasing circuit 12 resistors

Multi-geom

try strips goes here

Measure: • Before irradiation• After first irradiation• After second (mixed) irradiation• (possibly additional annealing study)

E.g. Multi-geometry strips S/N & resolution

Goes to irradiation

12×2 cablesbonds solderclamps

Multi-geom

try strips goes here

Pitch adaptor

This part can be exchanged with a CMS hybrid:Signal to Noise, & Resolution

Goes to CRACK or x,y-table(cosmic, source)

Biasing circuit 12 resistors

Similar plans for the multi-geometry try long pixels

Multi-geometry: http://indico.cern.ch/materialDisplay.py?contribId=1&materialId=slides&confId=77900

E.g.: Lorentz Angle Measurement• Add_baby: Sensor with 64 strips, 60um pitch• Measure displacement for different fields

(up to 10 T), temperatures, voltages

1cm

TOP-6APV4,95cm

1.25cm

B

5-6 sensors from same technology irradiated to different fluences on one hybrid

Lorentzangle: http://indico.cern.ch/conferenceDisplay.py?confId=77903

E.g.: Standard BabySensor behavior with fluence and annealing

1. Complete strip measurement2. CCE (128 strips bonded)3. Ramps on 5-10 strips after first irradiation4. CCE (128 strips bonded) after first irradiation5. Ramps on 5-10 strips after second irradiation6. CCE (128 strips bonded) after second irradiation

After second irradiation: Sensor bonded to ALIBAVAMeasurement (S/N & IV/CV for several voltages, several temperatures with source and/or laser)AnnealingMeasurementAnnealingMeasurementEtc.

Probe station

ALIBAVA

All steps fully automated in the one setup

Baby_std: http://indico.cern.ch/materialDisplay.py?contribId=34&sessionId=1&materialId=slides&confId=80949

Measurement Descriptions & Definitions

• Combination of – Initial talk at FNAL: http://indico.cern.ch/sessionDisplay.py?sessionId=7&slotId=0&confId=67916#2009-10-29

– Diodes: http://indico.cern.ch/materialDisplay.py?contribId=2&materialId=slides&confId=77900 & today

– Multi-geometry: http://indico.cern.ch/materialDisplay.py?contribId=1&materialId=slides&confId=77900

– Baby_std: http://indico.cern.ch/materialDisplay.py?contribId=34&sessionId=1&materialId=slides&confId=80949

– Baby_PA & _strixel: http://indico.cern.ch/materialDisplay.py?contribId=7&materialId=slides&confId=77900

– Lorentz angle: http://indico.cern.ch/conferenceDisplay.py?confId=77903

– TS: to be defined by Vienna (TUPO 04.04.2010)

• Irradiation: http://indico.cern.ch/materialDisplay.py?contribId=34&sessionId=1&materialId=slides&confId=80949 &

http://indico.cern.ch/materialDisplay.py?contribId=3&sessionId=3&materialId=slides&confId=76114

• I have to do more homework and combine this to one central document!

Etc.

Mind, ALL structures ask for a multitude of measurements,e.g. : diodes are simple, their measurements are not (CCE,TCT,CV,IV)!

Next Submission• No realistic planning yet:

– Input from current HPK submission needed• Reduce to one (max two) technology

– Maybe 2011/2012– Structure closer to “final” design, e.g.:

• 10 cm long structure with – 2*5 cm long strips, – 4*2.5 cm long strips– pt module geometry (2.5 mm long pixels)

– Structures to evaluate DC coupling (AC coupling)– …

2E Configuration4E Configuration

Four 3D sensors mounted on plaquettes for testbeam:

2E_WB5_2 : 2E configuration, 280µm substrate thickness4E_WB5_8 : 4E configuration, 280µm substrate thickness4E_WB2-16_5 : 4E configuration, 200µm substrate thickness2E_WB2-16_2 : 2E configuration, 200µm substrate thickness

n+ (readout)

p+ (bias)

3D Pixel sensors @ Sintef

Cooling tubes

sensor

bias wire

Results (3D Sintef): readout CAPTAIN

Threshold [DAC] = 50

Lot of studies done in a short timeDetector data still requires further studiesLooks promising

* 1 Vcal [DAC] = 65.5 electrons

3D Pixel Sensors @ CMN• CNM will design the mask of the pixels; the mask will include one large

module with a matrix of 8x2 detectors (PSI46 footprint) and various single chip detectors. Different test structures will be added such as DC 3D strips, 3D pads, polysilicon resistors etc.

• A total of 8 wafers will be fabricated– the cost will be paid by the GICSERV access.– The cost of the masks will be paid by PSI – CNM will process the wafers and will deposit the UBM (Ti/Ni/Au) and then ship

the wafers to PSI for Indium deposition, dicing and flip chip.• Ivan also commented that CNM and IFCA applied for national funding to

collaborate in the development of 3D pixels detectors for CMS.

Tentative TimetableTask Due date

Mask design May 2010Fabrication run November 2010First testing at CNM December 2010Indium deposition January 2011dicing February 2011Flip chip March 2011Testing 1 May 2011irradiation September 2011Testing 2 December 2011

DDTC

Two different geometries for the back ohmic holes will be implemented in the design

NEW!

BACKUP

Diode Cutting

2*2 diodes IN TS 8 individual diode_new 4 individual HPK diode

Reminder Backside aluminisation to allow backside illumination

• To allow Lorentz angle, CCE and TCT measurements• Problem: most sensors come on carrier substrate

– Usage of red laser form back not possible

3D mature yet?Introduced by: S.I. Parker et al., NIMA 395 (1997) 328

“3D” electrodes: - narrow columns along detector thickness - diameter: 10mm, distance: 50 - 100mm

Lateral lower depletion voltage depletion: thicker detectors possible

fast signal smaller trapping probability radiation hard to several 1015-1016p/cm2

higher capacitancesEdgeless: -Edge can be an active trench

Short collection path/time = almost no trapping; charge of the complete volume is collected

1. 3D single column type (STC)• suffer from a low field region between

columns2. 3D double-sided double type

columns (DDTC) • more complicated• full field

polysilicon

Phosphorusdiff.

oxide

Very soft “corner”

STC

DDTC

Quintessence: excellent progress but still some miles to go!

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