sensors and actuators at nxp: bringing more than …...sensors and actuators at nxp: bringing more...

Sensors and actuators at NXP:

bringing more than Moore to CMOS

Joost van Beek

Senior Principal Scientist

Corporate R&D, NXP Semiconductors

Presented at the “International Symposium on Advanced Hybrid Nano Devices”

4-5 October, 2011, Tokyo Institute of Technology

COMPANY CONFIDENTIAL

2

NXP Semiconductors

NXP Semiconductors N.V. (NASDAQ: NXPI)

provides High Performance Mixed Signal and

Standard Product solutions that leverage its

leading RF, Analog, Power Management,

Interface, Security and Digital Processing

expertise.

Our innovations are used in a wide range

of automotive, identification, wireless

infrastructure, lighting, industrial, mobile,

consumer and computing applications.


3

High Performance Mixed Signal SolutionsB

as

eli

ne C

MO

S:

MP

U, M

em

ory

, L

og

ic

Mo

re M

oo

re:

Min

iatu

riza

tio

n

Sense, Interact, Empower

High-Performance Components

Information

Processing,

Storage &

Security45nm

65nm

90nm

c13

c18

c35

c75

Passives

High

Voltage

Power

Analog

(amp, IF,

DC) RFSensors

Actuators

Bio-

chips

High-Performance

Mixed-Signal Solutions

• Power Efficiency,

Autonomy

• Cost Efficiency

• Functional

Performance

• Miniaturization

• Quality, Ruggedness

and Adaptability

More Than Moore: Enrichment

PowerSensor

Actuator

Processor /

Storage

Interface

Radio

Mixed-Signal Sub-Systems

Digital Advanced CMOS

More Than Moore RequiredApplication Optimized Mix of

Analog and Digital

3


4

HPMS Sensor & Actuator Solutions

Humidity

Temperature

Acidity

Shock

Pressure

Magnetic field

Light

CO2

4

PowerSensor

Actuator

Processor /

Storage

Interface

Radio

Mixed-Signal Sub-Systems

Digital Advanced CMOS

Timing

Frequency

synthesis


What can we do with CMOS?

active devices level:

- diodes, mosfet’s,

bipolars

4..6 metal

interconnect:

- 5.6…9µm-thick mix

of Al/Ti(N)/W

conductors in

oxide/nitride matrix

Si electronic

properties:

- Eg(T) (T transducer)

- photoconductivity

(ALS)

Selective removals

of materials:

-Mechanical

transducers

(shock, pressure)

- Thermal actuation

and sensing (pH;

CO2)

C/Z transducers

- RH, pH, Gas

(CO2, CO)Additional layers

on top of finished wafer


First CMOS integrated sensors

prototype demonstration:

- Wireless read-out

- Single chip with Temperature,

Relative Humidity and Ambient

Light sensors

CMOS multiple sensor integration

KOALA™

6


NXP Research Prototype (KOALA)

CMOS integrated sensors test-chip

“Add-on to baseline CMOS”: Gas phase (humidity, CO2, O2, C2H4), Liquid (Immersion, pH), Mechanical Shock, Pressure and Ambient Light sensors

COMPANY CONFIDENTIAL 8

MEMS Timing Devices

MEMS resonator

MEMS based oscillator

accurate clock

signalCMOS amplifier

resonatorvacuum seal

CMOS14 amplifier

On-wafer vacuum sealed

MEMS resonator


A MEMS resonator is small, cheap, and Si

15 MHz MEMS resonator

0.4X0.4X0.15 mm3

15 MHz

quartz resonator

2.5X2.0X0.55 mm3

product height:

<150 um

miniaturization

price

MEMS

quartz

min. product height:

400 um +/-10%

product height:

<150 um

miniaturization

price

MEMS

quartz

min. product height:

400 um +/-10%

•Processed 200 mm wafer

contains ~ 100,000 devices

•Standard back-end processing

(plastic molded packaging)

quartz

CMOS

Less components

Small Inexpensive

Scalable Allows integration


MEMS Timing Device technology

October 4, 2011

10

-400

-300

-200

-100

0

100

200

Temperature [oC]

Fre

qu

en

cy o

ffset

[pp

m]

0 20 60 100 140 180

AT-cut quartz crystal

Si-SiO2

Quartz tuning forkUncompensated Si

3.15m

m

3.15m

m

m

m

m

m

m

m

m

m

m

10m

m

10m

World’s smallest

MEMS resonator!!

Q~100,000 @26MHz

Low temperature drift

On-wafer package

High frequency

Low noise

Frequency offset (Hz)1e+1 1e+2 1e+3

Phase n

ois

e (d

Bc/H

z)

-130

-120

-110

-100

-90

-80

-70

-60

-50

-40

-30

Oscillation @ 56MHz


Capacitive pressure sensor

Capacitive pressure sensor– A (static) pressure causes a deflection of the membrane and thus a change in

the capacitance.

1111

R

Prwgh

rdrPC

0 rdiel

0

,

2

g

AεC 0

R

gh

− For a circular membrane with electrode radius R and gap height g and

electrode isolation thickness hdiel and deflection profile w(r,P)


Capacitive pressure sensor– low-power operation

Pressure sensor integrated on CMOS– Low parasitic coupling: increased S-N

– Reduced size & thickness for same sensitivity (>6x)

– Single-die advantage

12

Advantages of capacitive sensor on CMOS

Piezoresistive read-out: dual die Capacitive read-out: single die

12

5 mm 2 mm

5 mm

1.5 mm

1.2 mm

1.5

mm

ASIC

0.4 mm

0.6

mm


Pressure sensor performance

Pressure resolution is better than 0.02 mbar (i.e. 2 Pa or 16 cm !!!) due to

the 19 bit resolution of the capacitance to digital converter

13

-0.2

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1021.42

1021.44

1021.46

1021.48

1021.50

1021.52

1021.54

1021.56

1021.58

0 50 100 150 200

He

igh

t (m

)

Pre

ssu

re (

mb

ar)

Time (s)

on the table

on the ground


CMOS scaling in relation to bio-sensing

0.1

1

10

100

1000

2010 2013 2016 2019 2022

Siz

e (

nm

)

Year of production

Small molecules

Proteins

Viruses

Prokaryotes

DNA base

pair pitch

IgG

HIV

Chlamydia

(ITRS 2009)

S DG

Gate length = 33

nm

Mouse

IgG


NXP Biosensor technology

Standard C90 nm CMOS chip design

– Individual addressable electrodes

– On-chip data storage

– On-chip calibration

Label-free capacitive detection on 180 nm nano-electrodes

d

AC eff .

4 temperature

sensors

8 A/D converters

256 x 256 nano-

electrodes

electrode

electrolyte

Sensor configuration

Sensor principle

AFM picture nano-electrodes


Bio-sensor unique selling points

Label-free detection platform applicable for affinity

sensing: DNA/proteins

Ability for multiplexing

Very good time resolution: 0.2 s allows kinetic measurements

Potential to measure in pM range

Based on standard CMOS chip manufacturing cost-effective


17

AMR sensor applications

Throttle controlusing

2 angle sensors KMA199EABSusing

4 wheel speed sensors KMI15

Window wiper using

2 angle sensors KMZ43T

Adaptive steering Using

3 angle sensors KMZ41Steering Wheel position


October 4, 2011

18

The AMR EffectRelation b/w Resistivity and Direction of Magnetisation

βCurrent

+ - R = R0 + ΔR · cos2β

β = 0° R|| = R0 + ΔR = Rmax

β = 90° R = R0 = Rmin

Due to the AMR effect in so-called transition metals (TMs) (e.g. Fe, Co and Ni)

the electrical resistivity depends on the angle between current and

magnetization direction

MR ratio

(R|| - R)/ R =DR/ RTypical MR ratio for NiFe 81:19 2,2%


Principle of AMR based

Rotational Speed Measurement

a.) b.) d.)c.)

position

Magnet

Gear wheel

Sensor

Magnetic

field lines

Direction

of motion


Key messages

Sensors & Actuators are natural fit to NXP’s HPMS strategy

Go with the (CMOS process) flow: – Mainstream CMOS forms a baseline for many of our process

developments

Trend towards co-integration of Sensors & Actuators on CMOS – Several sensors on a single die: parallel processing & correlation possible

– CMOS circuitry close to sensor : low parasitics, improved power efficiency

Sensors & Actuator development requires holistic approach:– Co-design of driver/reader electronics together with sensor/actuator

October 4, 2011

20


October 4, 2011

21

Acknowledgement

Wim Besling

Youri Ponomarev

Frederik Vanhelmont

Frans Widdershoven

sensors and actuators at nxp: bringing more than …...sensors and actuators at nxp: bringing more...

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