semiteh electronics 2sk1658 2sk electronics 1/4 2sk1658 n-channel mosfet sot-323 1 1. gate 2. source...
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Semiteh Electronics
1/4
2SK1658 N-channel MOSFET
SOT-323 1. GATE
2. SOURCE
3. DRAIN
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol Parameter Value Unit
VDS Drain-Source voltage 30 V
VGS Gate-Source Voltage ±7 V
ID Continuous Drain Current 0.1 A
PD Power Dissipation 0.2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
RθJA Thermal Resistance from Junction to Ambient 625 /W
Equivalent Circuit
FEATURE Low on-resistance Fast switching speed Low voltage drive makes this device ideal for
Easily designed drive circuits Easy to parallel
Portable equipment
V(BR)DSS RDS(on)MAX ID
30V 10Ω@4V
100mA15Ω@2.5V
Interfacing , Switching APPLICATION
2SK1658
Semiteh Electronics
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Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 10µA 30 V
Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V 1 µA
Gate –Source leakage current IGSS VGS =±3V, VDS = 0V ±1
Gate Cut-off Voltage VGS(off) VDS = 3V, ID =1µA 0.9 1.5 V
VGS = 4V, ID =10mA 10 Ω Drain-Source On-Resistance RDS(on)
VGS =2.5V,ID =10mA 15 Ω
Forward Transconductance gFS VDS =3V, ID = 10mA 20 mS
Dynamic Characteristics* Input Capacitance Ciss 15 pF
Output Capacitance Coss 10 pF
Reverse Transfer Capacitance Crss
VDS =3V,VGS =0V,f =1MHz
1.5 pF
Switching Characteristics* Turn-On Delay Time td(on) 50 ns
Rise Time tr 23 ns
Turn-Off Delay Time td(off) 34 ns
Fall Time tf
VGS =3V, VDD =3V,
ID =10mA, Rg=10Ω, RL=300Ω
43 ns
*These parameters have no way to verify.
µA
MOSFET ELECTRICAL CHARACTERISTICS
aT =25 unless otherwise specified
2SK1658
Semiteh Electronics
3/4
0 1 2 3 4 50.00
0.05
0.10
0.15
0.20
1 10 1000
20
40
60
0 5 10 15 200
5
10
15
0 1 2 3 40.1
1
10
100
0.2 0.4 0.6 0.8 1.00.1
1
10
100
VGS=2.5V
4.0V
3.5V
Ta=25Pulsed
Output Characteristics
VGS=3.0V
VGS=2.0V
VGS=1.5V
DR
AIN
CU
RR
EN
T
I D
(A)
DRAIN TO SOURCE VOLTAGE VDS (V)
Ta=25Pulsed
ID——RDS(ON)
VGS= 2.5V
VGS= 4V
ON
-RES
ISTA
NC
E
RD
S(O
N)
(Ω)
DRAIN CURRENT ID (mA)
30
0.3
3
3 30
Ta=25Pulsed
ID=100mA
ID=50mA
VGS——RDS(ON)
ON
-RES
ISTA
NC
E
RD
S(O
N)
( Ω)
GATE TO SOURCE VOLTAGE VGS (V)
0.3
30
3
200
200
VDS=3VTa=25Pulsed
Transfer Characteristics200
DR
AIN
CU
RR
EN
T
I D
(mA)
GATE TO SOURCE VOLTAGE VGS (V)
VSDIS ——
VGS=0VTa=25Pulsed
SO
UR
CE
CU
RR
EN
T
I S
(mA)
SOURCE TO DRAIN VOLTAGE VSD (V)
Typical Characteristics
2SK1658
Semiteh Electronics
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Min Max Min MaxA 0.900 1.100 0.035 0.043
A1 0.000 0.100 0.000 0.004A2 0.900 1.000 0.035 0.039b 0.200 0.400 0.008 0.016c 0.080 0.150 0.003 0.006D 2.000 2.200 0.079 0.087E 1.150 1.350 0.045 0.053
E1 2.150 2.450 0.085 0.096e
e1 1.200 1.400 0.047 0.055L
L1 0.260 0.460 0.010 0.018 0° 8° 0° 8°
0.525 REF 0.021 REF
Symbol Dimensions In Millimeters Dimensions In Inches
0.650 TYP 0.026 TYP
2SK1658