semiconductors for room-temperature radiation detector...

Semiconductors For Room-TemperatureRadiation Detector Applications

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Cambridge University Press978-1-107-40950-7 - Materials Research Society Symposium Proceedings: Volume 302:Semiconductors for Room-Temperature Radiation Detector ApplicationsEditors: R. B. James, T. E. Schlesinger, Paul Siffert and Larry FranksFrontmatterMore information

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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 302

Semiconductors For Room-TemperatureRadiation Detector Applications

Symposium held April 12-16, 1993, San Francisco, California, U.S.A.

EDITORS:

R.B, JamesSandia National Laboratories

Livermore, California, U.S.A.

T.E, SchlesingerCarnegie Mellon University

Pittsburgh, Pennsylvania, U.S.A.

Paul SiffertLaboratorie PHASE/CRN

Strasbourg, France

Larry FranksEG&G Energy Measurements

Goleta, California, U.S.A.

MATERIALS RESEARCH SOCIETYPittsburgh, Pennsylvania






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Contents

PREFACE xi

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS xii

PART I: MATERIALS, DEVICES, AND APPLICATIONS

•FUNDAMENTALS OF SEMICONDUCTOR DETECTORS FOR IONIZINGRADIATION 3

G.F. Knoll and D.S. McGregor

*USE OF ROOM TEMPERATURE SEMICONDUCTOR DETECTORS FORTHE VERIFICATION OF NUCLEAR MATERIAL IN INTERNATIONALSAFEGUARDS—RECENT ADVANCES 19

R. Arlt, D.E. Rundquist, D. Bot, P. Siffert, M. Richter, A. Khusainov,V. Ivanov, A. Chrunov, Y. Petuchov, F. Levai, S. Desi, M. Tarvainen,and I. Ahmed

*HIGH PURITY GERMANIUM TECHNOLOGY FOR GAMMA-RAY ANDX-RAY SPECTROSCOPY 31

L.S. Darken and C.E. Cox

*MULTI-ELEMENT MERCURIC IODIDE DETECTOR SYSTEMS FOR X-RAYAND GAMMA-RAY IMAGING 43

Bradley E. Patt

*A ROBOTIC METHOD FOR CREATING RADIATION MAPS USINGMERCURIC IODIDE SENSOR 55

Masao Kume and Pradeep K. Khosla

ELEMENTAL IMPURITY ANALYSIS OF MERCURIC IODIDE BY ICP/MS 61Eilene S. Cross, Eugene Mroz, and Jose* A. Olivares

ANALYSIS OF Hgl2 AND Pbl2 CRYSTALS AND DETECTORS BYPARTICLE-INDUCED X-RAY EMISSION (PIXE) AND IONBACKSCATTERING SPECTROSCOPY (IBS) 67

G.S. Bench, A.J. Antolak, D.H. Morse, D.W. Heikkinen, A.E. Pontau,R.B. James, D.C. David, A. Burger, and L. van den Berg

GROWTH OF SINGLE CRYSTALS OF MERCURIC IODIDE ON THEGROUND AND IN SPACE 73

L. van den Berg

•MERCURIC IODIDE X- AND GAMMA-RAY DETECTORS FOR SPACEAPPLICATIONS 79

Jan S. Iwanczyk

X-RAY FLUORESCENCE ANALYSIS CAPABILITY OF Hgl, DETECTORSYSTEMS " 89

Y.J. Wang and J.S. Iwanczyk

PART II: MERCURIC IODIDE

A HgL MICROSTRIP DETECTOR BASED ON RESISTIVE CHARGEDIVISION READOUT 97

D. Grassi, F. Murolo, E. Perillo, G. Spadaccini, M. Vigilante,M. Amann, J.M. Koebel, P. Siffert, and W. Dusi

•Invited Paper






DEFECTS IN SILVER-DOPED MERCURIC IODIDE CRYSTALS AND THEIREFFECT ON X-RAY AND GAMMA-RAY DETECTOR PERFORMANCE 103

R.B. James, X.J. Bao, T.E. Schlesinger, A.Y. Cheng, and V.M. Gerrish

INCORPORATION OF EXTRINSIC DEFECTS IN Hgl2 DURING DETECTORFABRICATION 115

J.M. Van Scyoc, T.E. Schlesinger, R.B. James, A.Y. Cheng, C. Ortale,and L. van den Berg

•ELECTRONIC AND OPTICAL PROPERTIES OF Hgl2 121Yia-Chung Chang, Hock-Kee Sim, and R.B. James

•ELECTRONIC CHARACTERIZATION OF MERCURIC IODIDE GAMMA RAYSPECTROMETERS 129

Vernon M. Gerrish

EVALUATION OF ELECTRICAL CONTACT MATERIAL STABILITY ONMERCURIC IODIDE 141

A.Y. Cheng

INVESTIGATION OF AN ALTERNATIVE CHEMICAL ETCHANT FORMERCURIC IODIDE DETECTORS 147

Dominique C. David, J.V. Scyoc, Mardik Khudatyan, R.B. James,R.J. Anderson, and T.E. Schlesinger

X-RAY ANALYSIS OF ALPHA MERCURIC IODIDE CRYSTAL STRUCTUREAND PROCESSING EFFECTS 153

L. Keller, E.X. Wang, and A.Y. Cheng

A STUDY OF DARK CURRENTS ON VARIOUS MODIFIED SURFACES OFMERCURIC IODIDE SINGLE CRYSTALS 161

H.N. Jayatirtha, M. Azoulay, M.A. George, and A. Burger

PART III: CADMIUM TELLURIDE

*CdTe DETECTORS RESPONSES TO PULSED X-RAYS: COMPARISON OFDIFFERENT MATERIALS 169

L. Verger, M. Cuzin, F. Glasser, J. Lajzerowicz, F. Mathy, and J. Rustique

RECENT PROGRESS IN THE CdTe 7-RAYS DETECTOR SIMULATK3N 183C. Manfredotti, F. Fizzotti, C. Ongaro, E. Vittone, and U. Nastasi

CdTe.Cl AND CdTeSe.Cl SINGLE CRYSTALS APPLICATION FORRADIATION DETECTORS 189

B.K. Meyer, D.M. Hofmann, W. Stadler, M. Salk, C. Eiche,and K.W. Benz

*PULSE PROCESSING FOR PLANAR CADMIUM TELLURIDE DETECTORS 195M. Richter, M. Hage-Ali, Z.T. Kuznicki, and P. Siffert

AN ULTRA LOW NOISE PREAMPLIFIER FOR ROOM TEMPERATUREX-RAY DETECTORS 205

G. Bertuccio, P. Rehak, and D.M. Xi

*NEW PERSPECTIVES IN LOW NOISE PREAMPLIFIER DESIGN FOR ROOMTEMPERATURE DETECTOR APPLICATIONS 213

P.F. Manfredi

CURRENT-VOLTAGE CHARACTERISTICS OF HIGH RESISTIVITY CdTe 225Y. Iwase, R. Ohno, and M. Ohmori

*Invited Paper






INVESTIGATION OF DEEP LEVELS IN X-RAY DETECTOR MATERIAL WITHPHOTO INDUCED CURRENT TRANSIENT SPECTROSCOPY (PICTS) 231

C. Eiche, M. Fiederle, J. Weese, D. Maier, D. Ebling, and K.W. Benz

MATHEMATICAL MODEL FOR THE SIMULATION OFCRYSTALLIZATION OF CdTe IN A VERTICAL BRIDGMAN FURNACE 237

Ch. Steer, M. Hage-Ali, and P. Siffert

PART IV: DIAMOND

*ELECTRICAL PROPERTIES OF NATURAL Ila DIAMONDS USING PHOTO-AND PARTICLE EXCITATION 245

L.S. Pan, S. Han, D.R. Kania, K.K. Gan, S. Zhao, H. Kagan, R. Kass,R. Malchow, F. Morrow, W.F. Palmer, C. White, S.K. Kim, F. Sannes,S. Schnetzer, R. Stone, G.B. Thomson, Y. Sugimoto, A. Fry, S. Kanda,S. Olsen, M. Franklin, J.W. Ager III, and P. Pianetta

DIAMOND DOPING BY LOW ENERGY ION IMPLANTATION DURINGGROWTH 251

K.D. Jamison, H.K. Schmidt, D. Eisenmann, and R.P. Hellmer

ELECTRICAL PROPERTIES IN CVD DIAMOND FILMS 257S. Zhao, K.K. Gan, H. Kagan, R. Kass, R. Malchow, F. Morrow,W. Palmer, C. White, L.S. Pan, S. Han, D. Kania, M. Piano,M. Landstrass, M. Lee, S. Kim, F. Sannes, S. Schnetzer, R. Stone,G. Thomson, Y. Sugimoto, A. Fry, S. Kanda, and S. Olsen

EXPERIMENTAL RESULTS IN PICOSECOND AND SUBPICOSECONDRANGE OF Ila TYPE DIAMOND DETECTOR IN X-UV, VISIBLE ANDIR FIELDS 263

M. Nail, Ph. Gibert, J.L. Miquel, and M. Cuzin

CHARACTERIZATION OF CVD DIAMOND FILMS BY OPTICALSPECTROSCOPIES 275

Joel W. Ager III, Sung Han, Ron S. Wagner, Lawrence S. Pan,D.R. Kania, and Stephen M. Lane

FAST DIAMOND PHOTOCONDUCTORS 281T. Pochet, B. Brullot, R. Galli, and C. Rubbelynck

RADIATION DOSIMETRY VIA THE RADIO-PHOTOLUMINESCENCE OFSYNTHETIC DIAMOND 287

Rex J. Keddy, Tom L. Nam, and Shawn Araikum

X-RAY STUDIES OF SYNTHETIC RADIATION-COUNTING DIAMONDS 293Andrew Yacoot, Moreton Moore, and Anthony Makepeace

ELECTRICAL MOBILITY AND CARRIER LIFETIME INSINGLE-CRYSTAL, ISOTOPICALLY PURE TYPE Ila SYNTHETICDIAMOND 299

L.S. Pan, S. Han, D.R. Kania, and W. Banholzer

SUB-NANOSECOND DETECTION OF HEAVY IONS USINGSINGLE-CRYSTAL, NATURAL TYPE Ila DIAMOND 305

Sung Han, Stanley G. Prussin, Lawrence S. Pan, Stephen M. Lane,Don R. Kania, Ronald S. Wagner, and Caleb R. Evans

BAND-EDGE PHOTORESPONSE CHARACTERISTICS OFDIAMOND MSM'S 311

Mike Marchywka, Steven C. Binari, Deborah A. Koolbeck,and Daniel Moses

*Invited Paper

vii






PART V: NEW DETECTOR MATERIALS

*NEW COMPOUND SEMICONDUCTOR MATERIALS FOR NUCLEARDETECTORS 319

Michael R. Squillante, John Zhang, Chuxin Zhou, Paul Bennett, andLarry Moy

IMPROVEMENTS IN THALLIUM BROMOIODIDE PHOTODETECTORS FORSCINTILLATION SPECTROMETERS 329

J.G. Zhang, L. Cirignano, K. Daley, and M.R. Squillante

INVESTIGATION OF LEAD IODIDE CRYSTALS FOR USE AS HIGHENERGY SOLID STATE RADIATION DETECTORS 335

Dominique C. David, R.B. James, H. Feemster, R. Anderson,A.J. Antolak, D.H. Morse, A.E. Pontau, H. Jayatirtha, A. Burger,X.J. Bao, T.E. Schlesinger, G.S. Bench, and D.W. Heikkinen

VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY STUDIES OF Hgl2 341Huade Yao and Blaine Johs

*PHYSICAL-CHEMICAL CONSIDERATIONS FOR SEMICONDUCTOR ROOM-TEMPERATURE RADIATION DETECTORS 347

M. Schieber, H. Hermon, and M. Roth

PROCESSING AND CHARACTERIZATION OF HgBrxI9 x RADIATIONDETECTORS "" 357

C. Zhou, M.R. Squillante, L.P. Moy, and P. Bennett

STUDIES OF CHARGE COLLECTION IN GaAs RADIATION DETECTORS 363K. Berwick, M.R. Brozel, CM. Buttar, M. Cowperthwaite, and Y. Hou

FAST GaAs PHOTOCONDUCTOR RESPONSES TO SUBNANOSECONDPROTON PULSES 369

B. Brullot, R. Galli, X. Lecat, C. Rubbelynck, and T. Pochet

ANALYSIS OF DEEP LEVELS IN GaAs DETECTOR DIODES USINGIMPEDANCE SPECTROSCOPY 375

C. Eiche, M. Fiederle, J. Weese, D. Maier, D. Ebling, J. Ludwig,and K.W. Benz

EXPERIMENTAL RESULTS FROM 7-IRRADIATED GaAs CRYSTALSGROWN WITH DIFFERENT TECHNIQUES 381

W. Bencivelli, E. Bertolucci, U. Bottigli, A. Cavallini, S. D'Auria,C. Da V&, C. Del Papa, M.E. Fantacci, V. Rosso, A. Stefanini, andG. Stefanini

PART VI: II-VI DETECTOR TECHNOLOGY

•IMPROVED QUALITY OF BULK II-VI SUBSTRATES FOR HgCdTe ANDHgZnTe EPITAXY 391

Sanghamitra Sen and John E. Stannard

EXCESS CARRIER LIFETIMES IN (HgCd)Te GROWN BY MOCVDINTERDIFFUSED MULTILAYER PROCESS 403

P. Mitra, T.R. Schimert, Y.L. Tyan, A.J. Brouns, and F.C. Case

MAPPING OF DEFECTS IN METAL-SEMICONDUCTOR-METAL (MSM)DETECTORS IN Hg l Cd Te BY NUCLEAR MICROPROBE 411

Patrick W. Leech, Sean P. Dooley, and David N. Jamieson

•Invited Paper

viii






TWINNING EFFECTS IN Hg, xCdJe (x~0.2) GROWN BY THM IN THE<111> DIRECTION 417

Eliezer Weiss, Ehud Kedar, and Nili Mainzer

HgCdTe MBE TECHNOLOGY: A FOCUS ON CHEMICAL DOPING 423Owen K. Wu

QUALITY OF BULK CdTe SUBSTRATES AND ITS RELATION TOINTRINSIC DEFECTS 433

B.K. Meyer, D.M. Hofmann, W. Stadler, P. Emanuelsson, P. Omling,E. Weigel, G. Muller-Vogt, F. Wienecke, and M. Schenk

DEFECT REDUCTION IN Cdj xZnxTe EPILAYERS ON GaAsSUBSTRATES 439

Saket Chadda, Kevin Malloy, and John Reno

DIRECT HETEROEPITAXIAL GROWTH OF ZnTe(lOO) ANDCdZnTe(100)/ZnTe(100) ON Si(100) SUBSTRATES BY MBE 445

T.J. de Lyon, S.M. Johnson, C.A. Cockrum, O.K. Wu,and J.A. Roth

CHARACTERIZATION OF GROWTH DEFECTS IN ZnTe SINGLECRYSTALS 451

W. Zhou, J. Wu, M. Dudley, C.H. Su, M.P. Volz, D.C. Gillies,F.R. Szofran, and S.L. Lehoczky

STUDY OF DIFFERENT CADMIUM TELLURIDE MATERIALS DOPEDWITH V, Zn AND Cl GROWN BY VERTICAL BRIDGMAN FURNACEAND BY THM 457

Ch. Steer, L. Chibani, J.M. Koebel, M. Hage-Ali, and P. Siffert

*CRYSTALLOGRAPHIC AND METALLURGICAL CHARACTERIZATION OFRADIATION DETECTOR GRADE CADMIUM TELLURIDE MATERIALS 463

C.J. Johnson, E.E. Eissler, S.E. Cameron, Y. Kong, S. Fan,S. Jovanovic, and K.G. Lynn

*RECENT DEVELOPMENTS IN HIGH RESISTIVITY DETECTOR-GRADE CdTe 479

M. Hage-Ali and P. Siffert

AN ARRAY OF CdTe DETECTORS FOR IMAGING APPLICATIONS 487Y. Eisen and E. Polak

*PROGRESS IN Cd, Zn Te (CZT) RADIATION DETECTORS 497J.F. Butler, F.P. Doty, B. Apotovsky, S.J. Friesenhahn, and C. Lingren

PERFORMANCE CHARACTERISTICS OF CdTe GAMMA-RAYSPECTROMETERS 507

Michael R. Squillante, Herbert Cole, Peter Waer, and Gerald Entine

PART VII: SILICON TECHNOLOGY

*BULK DEFECTS AND RADIATION DAMAGE IN DETECTOR GRADESILICON 515

J. Walter, W. Garber, R. Wunstorf, W. Bugg, J. Harvey, and W. Casson

SILICON DETECTORS HIGHLY COMPENSATED BY NEUTRONINDUCED DEEP LEVELS FOR LOW ENERGY X-RAY DETECTION 527

Zheng Li and H.W. Kraner

*Invited Paper






FAST AVALANCHE PHOTODIODE DETECTORS FOR THESUPERCONDUCTING SUPER COLLIDER 537

Stefan Vasile, Jeffrey S. Gordon, Richard Farrell, andMichael R. Squillante

IMPROVEMENTS OF a-Si:H/CsI(Tl) X-RAY DETECTORS FORRADIATION MONITORING 543

C. Manfredotti, F. Fizzotti, M. Boero, F. Cannistraci, E. Vittone,A. Torti, and M. Turnaturi

JUNCTION FIELD EFFECT TRANSISTOR X-RAY DETECTORS 549J.C. Lund, F. Olschner, and L. Rehn

M.O.S. TRANSISTORS WITH > 1 pm THICK GATE OXIDE FORIONIZING RADIATION DOSIMETRY 555

F. Gessinn and G. Sarrabayrouse

CHARACTERISTICS OF SILICON PHOTODETECTOR USINGEPITAXIAL WAFER WITH HIGH RESISTIVITY AND LONGRECOMBINATION LIFETIME 561

Yoshimaro Fujii, Akira Usami, Keisuke Kaneko,and Takao Wad a

POINT DEFECTS IN A DIRECTLY-BONDED WAFER, AND ITSCOMPARISON WITH THE BONDED SOI WAFERS 567

Akira Usami, Keisuke Kaneko, Akira Ito, Shun-ichiro Ishigami,and Takao Wada

CHARGE COLLECTION PROCESSES IN a-Si:H p-i-n DETECTORS 573T. Pochet

EVALUATION OF SILICON PHOTODIODE AS X AND GAMMA-RAYDETECTOR AT ROOM TEMPERATURE 579

V. Cimpoca, Gh. Caragheorgheopol, D. Lazarovici, C. Lazarovici, andR. Ruscu

MICROSCOPIC NONCONTACT ELECTRICAL EVALUATION FOR THESILICON-ON-INSULATOR LAYER WITH VOIDS 585

A. Usami, T. Nakai, S. Ishigami, T. Wada, K. Matsuki, and T. Takeuchi

EFFECTS OF ELECTRON RADIATION ON THE OPTICAL CONSTANTSOF P-TYPE SILICON 591

Onofrio L. Russo and Katherine A. Dumas

A LOW NOISE SILICON DETECTOR PREAMPLIFIER SYSTEM FORROOM TEMPERATURE X-RAY SPECTROSCOPY 597

G. Bertuccio and A. Pullia

AUTHOR INDEX 605

SUBJECT INDEX 609






Preface

The first Symposium on Semiconductors for Room-Temperature Radiation DetectorApplications was held at the 1993 MRS Spring Meeting in San Francisco, California.The purpose of the symposium was to provide a forum for presenting and evaluatingthe most recent results on semiconductor radiation detectors for utilization in the energyrange of a few eV to 1 MeV. The primary emphasis of the papers was on developingx-ray and gamma-ray detectors which combine the advantages of room temperatureoperation with the excellent energy resolution of cryogenically cooled spectrometers.By eliminating the cryogen, new radiation-sensing instruments can be manufactured thatare portable, easy to operate, and relatively maintenance-free.

The symposium was organized into technical sessions on mercuric iodide, cadmiumtelluride, diamond, cadmium zinc telluride, silicon, new detector materials, and deviceapplications. The discussion on device performance indicated that the quality of room-temperature semiconductor x-ray and gamma-ray detectors now meet the specificationsrequired for several applications in spectroscopy, environmental monitoring, mineralexploration, medical instrumentation, imaging, space, and industrial quality control.Progress was also demonstrated in the processing of the electronic pulses to improve theenergy resolution of the detectors, and in the availability of compact circuits to allowpackaging of field instruments which have significantly less weight compared toconventional technology. New results were reported on the relationships betweenmaterial properties and detector quality, and on improved techniques for purification,crystal growth, and processing technology. These measurements generated confidencethat continued advances in the performance of room-temperature semiconductordetectors and an expanded commercial market for these detectors are forthcoming.

The symposium was well attended, and the international participation was especiallystrong. One hundred and six presentations representing work from twenty one countrieswere given orally or as posters. This proceedings volume contains seventy-six peer-reviewed papers. The symposium organizers hope that it will serve as an importantupdate on the status of the technology and as a useful reference source for othersworking in the field.

The organizers would also like to thank the following organizations for their supportof this symposium:

Aurora Technologies CorporationeV Products (a division of II-VI Inc.)Kurt J. Lesker CompanyOxford Nuclear Measurements Group

Radiation Monitoring DevicesSandia National LaboratoriesTN Technologies, Inc.Xsirius, Inc.

Ralph B. JamesT.E. SchlesingerPaul SiffertLarry Franks

June 1993






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 279—Beam-Solid Interactions—Fundamentals and Applications, M.A. Nastasi,N. Herbots, L.R. Harriott, R.S. Averback, 1993, ISBN: 1-55899-174-3

Volume 280—Evolution of Surface and Thin Film Microstructure, H.A. Atwater,E. Chason, M. Grabow, M. Lagally, 1993, ISBN: 1-55899-175-1

Volume 281 — Semiconductor Heterostructures for Photonic and Electronic Applications,D.C. Houghton, C.W. Tu, R.T. Tung, 1993, ISBN: 1-55899-176-X

Volume 282—Chemical Perspectives of Microelectronic Materials III, C.R. Abernathy,C.W. Bates, D.A. Bohling, W.S. Hobson, 1993, ISBN: 1-55899-177-8

Volume 283—Microcrystalline Semiconductors—Materials Science & Devices,Y. Aoyagi, L.T. Canham, P.M. Fauchet, I. Shimizu, C.C. Tsai, 1993,ISBN: 1-55899-178-6

Volume 284—Amorphous Insulating Thin Films, J. Kanicki, R.A.B. Devine,W.L. Warren, M. Matsumura, 1993, ISBN: 1-55899-179-4

Volume 285—Laser Ablation in Materials Processing—Fundamentals and Applications,B. Braren, J. Dubowski, D. Norton, 1993, ISBN: 1-55899-180-8

Volume 286—Nanophase and Nanocomposite Materials, S. Komarneni, J.C. Parker,G.J. Thomas, 1993, ISBN: 1-55899-181-6

Volume 287—Silicon Nitride Ceramics—Scientific and Technological Advances,I-W. Chen, P.F. Becher, M. Mitomo, G. Petzow, T-S. Yen, 1993,ISBN: 1-55899-182-4

Volume 288—High-Temperature Ordered Intermetallic Alloys V, I. Baker,J.D. Whittenberger, R. Darolia, M.H. Yoo, 1993, ISBN: 1-55899-183-2

Volume 289—Flow and Microstructure of Dense Suspensions, L.J. Struble,C.F. Zukoski, G. Maitland, 1993, ISBN: 1-55899-184-0

Volume 290—Dynamics in Small Confining Systems, J.M. Drake, D.D. Awschalom,J. Klafter, R. Kopelman, 1993, ISBN: 1-55899-185-9

Volume 291—Materials Theory and Modelling, P.D. Bristowe, J. Broughton,J.M. Newsam, 1993, ISBN: 1-55899-186-7

Volume 292— Biomolecular Materials, S.T. Case, J.H. Waite, C. Viney, 1993,ISBN: 1-55899-187-5

Volume 293—Solid State Ionics III, G-A. Nazri, J-M. Tarascon, M. Armand, 1993,ISBN: 1-55899-188-3

Volume 294—Scientific Basis for Nuclear Waste Management XVI, C.G. Interrante,R.T. Pabalan, 1993, ISBN: 1-55899-189-1

Volume 295—Atomic-Scale Imaging of Surfaces and Interfaces, D.K. Biegelson,D.S.Y. Tong, D.J. Smith, 1993, ISBN: 1-55899-190-5

Volume 296—Structure and Properties of Energetic Materials, R.W. Armstrong,J J . Gilman, 1993, ISBN: 1-55899-191-3






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 297—Amorphous Silicon Technology—1993, E.A. Schiff, MJ. Thompson,P.G. LeComber, A. Madan, K. Tanaka, 1993, ISBN: 1-55899-193-X

Volume 298—Silicon-Based Optoelectronic Materials, R.T. Collins, M.A. Tischler,G. Abstreiter, M.L. Thewalt, 1993, ISBN: 1-55899-194-8

Volume 299—Infrared Detectors—Materials, Processing, and Devices, A. Appelbaum,L.R. Dawson, 1993, ISBN: 1-55899-195-6

Volume 300—III-V Electronic and Photonic Device Fabrication and Performance,K.S. Jones, SJ. Pearton, H. Kanber, 1993, ISBN: 1-55899-196-4

Volume 301—Rare-Earth Doped Semiconductors, G.S. Pomrenke, P.B. Klein,D.W. Langer, 1993, ISBN: 1-55899-197-2

Volume 302—Semiconductors for Room-Temperature Radiation Detector Applications,R.B. James, P. Siffert, T.E. Schlesinger, L. Franks, 1993,ISBN: 1-55899-198-0

Volume 303—Rapid Thermal and Integrated Processing II, J.C. Gelpey, J.K. Elliott,J.J. Wortman, A. Ajmera, 1993, ISBN: 1-55899-199-9

Volume 304—Polymer/Inorganic Interfaces, R.L. Opila, A.W. Czanderna, FJ . Boerio,1993, ISBN: 1-55899-200-6

Volume 305—High-Performance Polymers and Polymer Matrix Composites, R.K. Eby,R.C. Evers, D. Wilson, M.A. Meador, 1993, ISBN: 1-55899-201-4

Volume 306—Materials Aspects of X-Ray Lithography, G.K. Celler, J.R. Maldonado,1993, ISBN: 1-55899-202-2

Volume 307—Applications of Synchrotron Radiation Techniques to Materials Science,D.L. Perry, R. Stockbauer, N. Shinn, K. D'Amico, L. Terminello,1993, ISBN: 1-55899-203-0

Volume 308—Thin Films—Stresses and Mechanical Properties IV, P.H. Townsend,J. Sanchez, C-Y. Li, T.P. Weihs, 1993, ISBN: 1-55899-204-9

Volume 309—Materials Reliability in Microelectronics III, K. Rodbell, B. Filter,P. Ho, H. Frost, 1993, ISBN: 1-55899-205-7

Volume 310—Ferroelectric Thin Films III, E.R. Myers, B.A. Tuttle, S.B. Desu,P.K. Larsen, 1993, ISBN: 1-55899-206-5

Volume 311 — Phase Transformations in Thin Films—Thermodynamics and Kinetics,M. Atzmon, J.M.E. Harper, A.L. Greer, M.R. Libera, 1993,ISBN: 1-55899-207-3

Volume 312—Common Themes and Mechanisms of Epitaxial Growth, P. Fuoss,J. Tsao, D.W. Kisker, A. Zangwill, T.F. Kuech, 1993,ISBN: 1-55899-208-1

Volume 313—Magnetic Ultrathin Films, Multilayers and Surfaces/MagneticInterfaces—Physics and Characterization (2 Volume Set), C. Chappert,R.F.C. Farrow, B.T. Jonker, R. Clarke, P. Griinberg, K.M. Krishnan,S. Tsunashima/E.E. Marinero, T. Egami, C. Rau, S.A. Chambers,1993, ISBN: 1-55899-211-1

Volume 314—Joining and Adhesion of Advanced Inorganic Materials, A.H. Carim,D.S. Schwartz, R.S. Silberglitt, R.E. Loehman, 1993,ISBN: 1-55899-212-X

Volume 315—Surface Chemical Cleaning and Passivation for SemiconductorProcessing, G.S. Higashi, E.A. Irene, T. Ohmi, 1993,ISBN: 1-55899-213-8Prior Materials Research Society Symposium Proceedings

available by contacting Materials Research Society






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