semiconductor switch designs m.j. barnes acknowledgements w. bartmann, l. ducimetière, b. goddard,...

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Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi, R. Schmidt FCC week, 23th-27th March 2015 26/03/2015 FCC Week: Semiconductor Switch Designs. M.J. Barnes 1

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Page 1: Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi,

FCC Week: Semiconductor Switch Designs. M.J. Barnes

1

Semiconductor Switch Designs

M.J. Barnes

Acknowledgements

W. Bartmann, L. Ducimetière, B. Goddard,

J. Holma, A. Lechner, T. Fowler, T. Kramer,

M. Meddahi, R. Schmidt

FCC week, 23th-27th March 2015

26/03/2015

Page 2: Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi,

Outline

26/03/2015FCC Week: Semiconductor Switch Designs.

M.J. Barnes2

Requirements for FCC injection kickers;

An existing kicker system at CERN;

The need for developments of semiconductor (solid-state) switches;

Possible semiconductor switch topologies for injection;

Requirements for FCC extraction (dump) kickers;

Possible semiconductor switch topologies for extraction;

Other R&D required;

Timeline and tasks for R&D;

Summary.

Page 3: Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi,

FCC injection kicker system requirements

FCC Injection

Magnet technology Delay line

Kinetic Energy TeV 3.3

Kick mrad 0.29

B.dl T.m 3.2

Aperture height mm 18 + 17 = 35

Aperture width mm 18 + 17 = 35

Field rise/fall time µs 0.28

Field flattop length µs 2.25

Field flattop ripple % ±0.5

System impedance Ω 5

Assumed system magnetic length m ~30

Magnet current kA ~0.31 to ~3.1

Pulse voltage range kV 1.8 to 18

Approximate number of injection kicker systems 40

26/03/2015FCC Week: Semiconductor Switch Designs.

M.J. Barnes3

Page 4: Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi,

An existing kicker system at CERN

26/03/2015FCC Week: Semiconductor Switch Designs.

M.J. Barnes4

In general, line type modulators are used with a main switch and a dump switch; switch is typically a thyratron (closing switch);

Impedance matched Pulse Forming Line/Network (PFL/PFN), to minimise reflections, but requires the PFL/PFN to be charged to twice the load voltage;

PFL is probably most appropriate for FCC injection.

LHC Injection PFN

Terminating Resistor

Transmission Line

Z

Kicker Magnet

Z

Z

Main Switch

PFN or PFL

Z

RCPS

Dump Switch

Dump Resistor

Z

Single-way Delay τp

Line Type Modulator:

Max. pulse length = 2τp

I

Page 5: Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi,

The need for new developments

26/03/2015FCC Week: Semiconductor Switch Designs.

M.J. Barnes5

Thyratrons: pre-fire (self turn-on without a trigger signal)

is a concern; long-term availability is a real concern; have limitations with regard to dynamic

range and repetition rate; is only a closing switch need for PFN/PFL

for energy storage.

Pulse Forming Line: PFL has limitations: it should be matched to the load impedance, but coaxial

transmission lines are commercially available only with certain impedances; It is increasingly difficult to source coaxial transmission line for the highest

voltage (~80 kV) kicker systems.

Suitable semiconductor switch topologies can help to solve the above problems.

CERN PS PFLs

Injected beam

Circulating beam

Internal dumpKicker magnet

Require a reliable kicker system, forFCC, to avoid mis-kicking beam:BUT….

Unkicked inj.

Kicked circ.

Page 6: Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi,

Semiconductor Switches

26/03/2015FCC Week: Semiconductor Switch Designs.

M.J. Barnes6

Generally reliable and are not prone to self-triggering; Allow a wide dynamic range of operation; Maintenance is significantly reduced compared to gas switches; Series and parallel connection of power semiconductor switches can

potentially achieve designs with very high pulse power.

Examples of suitable switch technologies are: Marx Generator; Inductive Adder;

Depending upon the switch technology, solid-state modulators can be opened when conducting full load current, hence; only a portion of the stored energy is delivered to the load during the

pulse (therefore a PFL or PFN is not required); potentially limit fault current in the event of a magnet (load) electrical

breakdown; source impedance can be low, hence source voltage does not need

to be doubled.

Page 7: Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi,

FCC Injection: Marx Generator

26/03/2015FCC Week: Semiconductor Switch Designs.

M.J. Barnes7

Low source impedance; No output transformer maximum pulse length limited by capacitor values and

load; Modularity: same design can be used for different voltage (and current)

specifications;x Switches and control electronics are not referenced to ground;

An international collaboration has been proposed between CERN and ISEL, Portugal, to investigate Marx Generators as a potential replacement for thyratrons (in existing systems at CERN too).

Vdc

D2

C1 VMarxC2

D1

M1

M2

M

M

DN

CN

M

M

Out+

+

-

`

N-2

N-1

N+2

N+1Operation: Capacitors charged in parallel (shown: even # switches on), and discharged in series (odd # switches on) high voltage output.

Page 8: Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi,

26/03/2015FCC Week: Semiconductor Switch Designs.

M.J. Barnes8

Adder originally developed at SLAC/LLNL; Extremely high precision prototype built at

CERN, for CLIC, based on MOSFETs (fast switching).

Modularity: the same design can be used for different voltage and current specifications;

Short rise time can be achieved (< 10 ns);Potentially interesting for consolidation of existing (short pulse) systems too; Switches and control electronics are

referenced to ground; Promising technology for FCC injection; Output pulse voltage can be modulated; Redundancy easy to build-in;ΧOutput transformer maximum pulse length limited to typically ~3 μs;

FCC Injection: Inductive Adder

GateDrive

Circuit

Constant Voltage Layers

Analogue Modulation Layer

SemiconductorSwitch (array)

Trigger

Fast Diode Clamp

Primary Loop Current

SecondaryCurrent

VLoad

Ra

Lm

Stray Inductance

Capacitor Bank 700 V

+ _

Primary LeakageInductance

Transformer MagnetizingInductance

1 : 1Transformer

GateDrive

Circuit

Trigger

(N-1)layers

Leakage inductanceCapacitors

Primary loop inductance

Fast diode clamp

Magnetizing inductance

Semiconductor switches

Trigger

Trigger

Constant Voltage Layers

Analogue Modulation Layer

Load

Gate drive circuit

Gate drive

circuits

1:1 coaxial transformer

Primary current

Semiconductor switch (x8)

Capacitor (x8)

5 layer CLIC prototype

Page 9: Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi,

FCC extraction kicker system requirements

FCC Extraction

Magnet technology Lumped inductance

Kinetic Energy TeV 3.3 to 50

Kick mrad 0.15

B.dl T.m 1.6 to 25

Aperture height mm 36

Aperture width mm 36

Field rise/fall time µs ≤3

Field flattop length µs 350

Field flattop ripple % 10

System impedance Ω

Assumed system magnetic length m ~90

Magnet current kA·Turns ~0.55 to ~8.3

Output pulse voltage range kV

Approximate number of extraction kicker systems 300

26/03/2015FCC Week: Semiconductor Switch Designs.

M.J. Barnes9

Page 10: Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi,

Existing LHC Extraction System Generator voltage must track the beam energy and have a low pre-fire rate. Gate Turn-Off Thyristor’s, modified to be fast turn-on devices, are connected in

series high di/dt; Allows a wide dynamic range of operation; Fourteen extraction kicker systems per beam:

for safety reasons, in case of pre-fire of one generator, all are triggered asynchronous dump.

Two parallel generators (redundancy).

26/03/2015FCC Week: Semiconductor Switch Designs.

M.J. Barnes10

Voltage: 2.2kV – 30kV;

Current: 1.3kA – 18.5kA;

Current flat top: 95μs.

LHC dump – beam sweep:

Page 11: Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi,

26/03/2015FCC Week: Semiconductor Switch Designs.

M.J. Barnes11

FCC Extraction SystemSystem must be ULTRA RELIABLE

Consider an highly segmented system: hence pre-fire of one generator does unduly influence beam; not necessary to trigger other generators doesn’t give an asynchronous

dump; redundancy..

Several switch topologies under investigation: Scale existing LHC extraction generator for FCC (for segmented

system reduced current compared to LHC generator); Brainstorming idea based on an opening semiconductor switch:

switch is normally closed (conducting current) during inj. and ramp; switch opened to switch off current and extract beam; current proportional to kinetic energy of beam; “fail safe” (no current beam extracted); BUT high losses, maybe superconductivity can be used???

Talk by W. Bartmann (Tuesday)

Page 12: Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi,

Other R&D Required (Inj. & Ext.)

26/03/2015FCC Week: Semiconductor Switch Designs.

M.J. Barnes12

Study performance of various semiconductors, e.g. SiC, MOSFETS, IGBTs, …. (now & 10-20 years time???);

Magnetic materials; Ultra reliable triggering/controls; Other ideas for switch topologies; Failure mode analysis; Redundancy; Fault tolerance; Reliability; Possibility of locating generator in tunnel, under magnet;

Shielding of electronics; Radiation tolerant components;

Low source impedance may result in high fault current; Controls must detect fault current and limit magnitude;

Triggering method(s), e.g. fibre optics; …….

Page 13: Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi,

26/03/2015FCC Week: Semiconductor Switch Designs.

M.J. Barnes13

Timeline and tasks2015:• Task 1: Complete proposal (objectives, timeline, identify lab space, secure resources,

secure budget, and establish formal collaborations). • Task 2: Study overall concepts and kicker system options, and define key parameters

for FCC injection and/or extraction kicker generators.

2016 - 2017: • Task 3: Test and select individual components (switches and magnetic materials for

cores), design of the prototype for FCC injection. [collaborations sought]

2018: • Task 4: Document results and CDR write-up. • Task 5: Construct the prototype system (generator, transmission lines, load).

2019:• Task 6: Test the prototype.Note: timeline is dependent upon resources and budget availability…..

Collaborations very welcome!

Page 14: Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi,

Summary• Very challenging requirements;• High reliability kicker systems are required for FCC;• Parallel and series arrays of semiconductor switches are promising

for both FCC and consolidation of existing kicker systems;• eliminate pre-fire associated with thyratrons;

• eliminate need for very high voltage rating coaxial cable;

• built in redundancy;

• modularity.

• Closing and opening capability eliminates the need for a PFL/PFN; • Source impedance can be low, allowing a relatively small number of series

connected power semiconductors. BUT requires a careful consideration of fault conditions;

• Redundancy, fault tolerance, radiation tolerance,…

26/03/2015FCC Week: Semiconductor Switch Designs.

M.J. Barnes14

Page 15: Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi,

Thank you for your attention!

26/03/2015FCC Week: Semiconductor Switch Designs.

M.J. Barnes15

Comments and suggestions are VERY welcome.

Page 16: Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi,

Spare Slides

26/03/2015FCC Week: Semiconductor Switch Designs.

M.J. Barnes16

Page 17: Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi,

Line type modulator example waveforms

26/03/2015FCC Week: Semiconductor Switch Designs.

M.J. Barnes17

00.030.060.090.120.150.180.210.240.270.30.330.36

-0.50.00.51.01.52.02.53.03.54.04.55.05.5

0 2 4 6 8 10 12 14 16

∫B.d

l (T

·m)

Term

inat

or C

urre

nt (k

A)

Time (µs)

Current

∫B.dl

Terminating Resistor

Transmission Line

Z

Kicker Magnet

Z

Z

Closing Switch

PFN or PFL

Z

RCPS

Dump ResistorZ

Single-way Delay τp

Closing Switch

-0.500.511.522.533.544.555.5

-505

10152025303540455055

0 0.5 1 1.5 2

Pri

mar

y C

urr

ent

(kA

)

Seco

ndar

y (k

V)

Time (ms)

V(Secondary) V(PFN) I(Charge)

Page 18: Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi,

0

-2k

-4k

-6k

-8k

2k

0 1μs 2μs 3μs 4μs 5μs

Simulation:

Magnet current

Switch voltage

26/03/2015FCC Week: Semiconductor Switch Designs.

M.J. Barnes18

FCC Extraction System: opening switch possibility

Page 19: Semiconductor Switch Designs M.J. Barnes Acknowledgements W. Bartmann, L. Ducimetière, B. Goddard, J. Holma, A. Lechner, T. Fowler, T. Kramer, M. Meddahi,

Example of normal and fault currents

26/03/2015FCC Week: Semiconductor Switch Designs.

M.J. Barnes19

02468

101214161820

Cu

rren

t (k

A)

Time (s)

IA Example: Fault ConditionPFN Example: Fault ConditionIA: Normal OperationPFN: Normal Operation