semiconductor power devices : part 1 : from junction to material … · 2019-08-12 · trench based...
TRANSCRIPT
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Semiconductor Power Devices :
Part 1 : From Junction to Material EngineeringPart 2 : Reliability Basics
Peter Moens
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Semiconductor Power Devices : Part 1 : From Junction to Material Engineering
Peter Moens
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Global Challenges : Global Warming
16/07/20193
• 50% of all energy in the world is electrical (~8 TW.yrout of ~18 TW.yr)
• 40-60% of all produced electricity is lost, mainly due to the many transmission and conversion steps (HV to LV, AC to DC etc. )~4TW.yr is lost !
• E.g 4 conversion steps :
• Si : 95% of each step : total eff. ~81%
• GaN : 98% of each step : total eff. ~92%
Si SJ
eGaN
Boost converter
230V400V, 100 kHz
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The Evolution of Power Devices
16/07/20194
1940-1970
Vacuum tube
Solid State Relays
1980
HEXFET
1990
IGBT
2000
Super Junction
2010
SiC Diode,
MOSFET, SJ
2020
Al(In)GaN/GaN
HEMT
….
2020+
Metal Oxides
Junction Engineering
Materials Engineering
Metal NitridesSilicon Silicon Silicon Silicon Carbide
Substrate
GaN
AlGaN2DEG
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The Evolution of Logic Devices
Moore’s law driven by scaling.
• Up to 10nm node “junction engineering”
• Si nMOS and pMOS
• High k gate dielectric and metal gates
• Below 10nm node “material engineering”
• Ge-based for pMOS
• III-V based for nMOS
16/07/20195
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• Off-state
• Should block a high voltage, with no leakage current
• On-state
• Should have no resistance (ideal conductor)
• During switching from off to on (and vice versa)
• Should happen immediately
• No hysteresis
• No charge storage
Enabled by new material properties and novel device concepts which enable new system solutions
The ideal power semiconductor switch
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• Power devices=material properties
• 1D limit for a vertical transistor
• Resurf effect (2D)
• Non-polar and polar materials
• Concept of polarization charge
• Simple band structure
• HEMT “High Electron Mobility Transistor”
• HEMT versus vertical power device
• Ron and Capacitance versus Voltage
• Cost and performance
Outline
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• Power devices=material properties
• 1D limit for a vertical transistor
• Resurf effect (2D)
• Non-polar and polar materials
• Concept of polarization charge
• Simple band structure
• HEMT “High Electron Mobility Transistor”
• HEMT versus vertical power device
• Ron and Capacitance versus Voltage
• Cost and performance
Outline
N-drift layerP-well
N-source
GateSource
Drain
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The Baliga Figure of Merit—1D
Baliga Figure-of-Merit is a metric for how good a material is for uni-polar power device technology.
𝑅𝑜𝑛 [Ω. 𝑐𝑚2] =4. 𝑉𝑏𝑑
2
𝜀. 𝜇. 𝐸𝑐3
WBG U-WBG
• [note : Ec and mobility are assumed constant
(independent of doping) !]
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SiWBGMax. Elec. Field(Ecrit)
Band Gap
2x106 V/cm 2x105 V/cm
3V 1.1VGate Source
Drain
Gate Source
Drain 110
Ecrit
Ecrit
VBVB
Electric field
Electric field
Wide Band Gap Semiconductor Advantage
3
24
critn
Bon
E
VR
Significantly Low On-resistance10
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Baliga FOM—only for drift region (1D)
𝑅𝑜𝑛 [Ω. 𝑐𝑚2] =4. 𝑉𝑏𝑑
2
𝜀. 𝜇. 𝐸𝑐3
S
D
Rcont
Rcont
Rchan
Rdrift
Rsubs
GN-drift layerP-well
N-source
GateSource
Drain
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Assume an abrupt junction, parallel plane
Basic Equation for Power Semiconductors
𝝏𝟐𝑽
𝝏𝒙𝟐 = −𝝏𝑬
𝝏𝒙=
−𝒒. 𝑵𝑫
ℇ
𝐸 𝑥 =−𝑞.𝑁𝐷
ℇ.(𝑊𝐷 − 𝑥)
𝑉 𝑥 =𝑞.𝑁𝐷
ℇ.(𝑊𝐷 . 𝑥 −
𝑥2
2)
𝑉(𝑊𝐷)=𝑉𝑏𝑑
𝑾𝑫 =𝟐. ℇ. 𝑽𝒃𝒅
𝒒. 𝑵𝑫
𝑹𝒐𝒏 =𝑾𝑫
𝒒. 𝑵𝑫. 𝝁𝑵
Drift width
Resistivity
𝑽𝒃𝒅 =𝑬𝑪. 𝑾𝑫
𝟐
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Figure-of-merit : Ron versus Vbd
𝑹𝒐𝒏 =𝑾𝑫
𝒒. 𝑵𝑫. 𝝁𝑵
𝑾𝑫 =𝟐. ℇ. 𝑽𝒃𝒅
𝒒. 𝑵𝑫
[.m2]
𝑽𝒃𝒅 =𝑬𝑪. 𝑾𝑫
𝟐
𝑵𝑫 =𝜺. 𝑬𝑪
𝟐
𝟐. 𝒒. 𝑽𝒃𝒅
𝑹𝒐𝒏 =𝟒. 𝑽𝒃𝒅
𝟐
𝑬𝑪𝟑. 𝜺. 𝝁𝑵 0.01
0.1
1
10
10 100 1000 10000
Ro
n (
mΩ.c
m2)
Vbd (V)
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Super Junction : An Example of Junction Engineering
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Can we do better than the 1D approximation ?
How to go beyond the Baliga FOM ?
1. RESURF is a way of shaping the electrical fields in a device in such a way that the breakdown voltage is increased in comparison with the 1D planar junction
2. RESURF is a way of increasing the drift doping in a device (lowering the Ron) without the BVds going down, by shaping the electrical field
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Junction Resurf Diode
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Junction Resurf Diode
n+
p+
n
Ec
Classical P/N junction
+ V
0 V𝑅𝑜𝑛 =
2. ℎ𝑝. 𝑉𝑏𝑑
𝜇𝑁 . 𝜀𝑠. 𝐸𝑐2
E-field
P+
n+
n p
Ec
Ec
WnWp
t
hp
SJ devices have a
weaker dependency
on Vbd and Ec.
Ron depends on hp
Pitch (p) =2.hp
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Resurf Limit (2D)—Optimal Charge
𝝏𝟐𝑽
𝝏𝒙𝟐= −
𝝏𝑬
𝝏𝒙=
−𝒒. 𝑵𝑫
ℇ
𝑅𝑜𝑛 =1
𝑞.𝑁𝑛.𝜇𝑁.
𝑝
𝑊𝑛.t
𝐸𝐶 =𝑞. 𝑁𝑛. 𝑊𝑛
𝜀𝑠+
𝑞. 𝑁𝑝. 𝑊𝑝
𝜀𝑠
𝐸𝐶 = 2.𝑞. 𝑁𝑛. 𝑊𝑛
𝜀𝑠
𝑁𝑛 = 𝑁𝑝 ; 𝑊𝑛 = 𝑊𝑝
𝐸𝐶 . 𝜀𝑠 = 2. 𝑞. 𝑁𝑛. 𝑊𝑛
𝑬𝑪. 𝜺𝒔 = 2. 𝑞. 𝑁𝑛. 𝑊𝑛 = 𝑸𝒐𝒑𝒕[𝐶
𝑐𝑚2]
Ec=[V]/[cm]
Eps=[F]/[cm]
[F]=[C]/[V]
Qopt (cm-2)
Si 1.96 1012
GaN 1.34 1013
SiC 1.64 1013
AlN 5.82 1013
Ga2O3 4.42 1013
𝑹𝒐𝒏 =𝟐. 𝒑. 𝒕
𝑸𝒐𝒑𝒕. 𝝁𝑵
𝑽𝒃𝒅 = 𝑬𝒄.t
𝑹𝒐𝒏 =𝟐. 𝒑. 𝑽𝒃𝒅
𝑬𝒄. 𝑸𝒐𝒑𝒕. 𝝁𝑵
𝑹𝒐𝒏 =𝟐. 𝒑. 𝑽𝒃𝒅
𝝁𝑵. 𝜺𝒔. 𝑬𝒄𝟐
E-field
P+
n+
n p
Ec
Ec
WnWp
t
p
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Depends on device pitch (p) : process capability
Resurf limit--2D
0.01
0.1
1
10
10 100 1000 10000
Ro
n (
mΩ.c
m2)
Vbd (V)
p=6µm
p=10µm
p=15µm
0.01
0.1
1
10
10 100 1000 10000
Ro
n (
mΩ.c
m2)
Vbd (V)
pitch=6µmSlope=2
Slope=1
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Super Junction Transistors (Based on Resurf)
n++
n-
n++
n pp
Planar MOSFET SJ MOSFET
400
450
500
550
600
650
700
750
800
-30 -20 -10 0 10
Vb
d(V
)
CB (%)
CN=std ; I1=std-0.1um ; Ron=27 mΩ.cm2
CN=std ; I1=std+0.1 um ; Ron=19.5 mΩ.cm2
CN=std+20% ; I1=std-0.1 µm ; Ron=18 mΩ.cm2
To achieve Resurf Action, the total charge in the n and p columns must be balanced across the total structure !
Tight Process control is key !
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Ways to achieve a vertical SJ structure
n++
n pp
Multi-epi
multi-implant
Deep trench etch
single epi refill
Deep trench etch,
dual epi, oxide fill
n++
n pp
•n-epi control ~2-3%
•p-type control <1%
•Shrinking limited by
litho and diffusion, need
more epi/implant steps
•Shrinking potential
•n-epi control ~2-3%
•p-type control ~ 2-3%
•Deep trench etch taper
angle for seamless epi fill
•Large shrinking potential
•n-epi/p-epi control ~2-3%,
grown during same run !
•Dielectric fill
n++
i
n
pp
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Trench based Super Junction Device cross-section
n ++
i-epi i-epi
n ++
i-epi
n ++
n
p
i-epi
n ++
n
p
• Pring termination
• Gate trench
• Hard Mask
• Deep Trench etch
• Selective epi,
n- and p-type
• Oxide seal
• Contact, metal
Gate trench
Oxide plug
Airgap
Gate trench
Oxide plug
Airgap
NlinkPHV PHV
N-ty
pe
SE
G
N-ty
pe
SE
G
N-ty
pe
SE
G
N-ty
pe
SE
G
P-t
ype S
EG
P-t
ype S
EG
P-t
yp
e S
EG
P-t
ype S
EG
Intr
insic
supp
ort
ing e
pi
Intr
insic
su
pp
ort
ing e
pi
airga
p
airga
p
Oxide
plug
SourceGate trench
Intr
insic
su
pp
ort
ing e
pi
NlinkPHV PHV
N-ty
pe
SE
G
N-ty
pe
SE
G
N-ty
pe
SE
G
N-ty
pe
SE
G
P-t
ype S
EG
P-t
ype S
EG
P-t
yp
e S
EG
P-t
ype S
EG
Intr
insic
supp
ort
ing e
pi
Intr
insic
su
pp
ort
ing e
pi
airga
p
airga
p
Oxide
plug
SourceGate trench
Intr
insic
su
pp
ort
ing e
pi
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From Junction To Material Engineering
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• Power devices=material properties
• 1D limit for a vertical transistor
• Resurf effect (2D)
• Non-polar and polar materials
• Concept of polarization charge
• Simple band structure
• HEMT “High Electron Mobility Transistor”
• HEMT versus vertical power device
• Ron and Capacitance versus Voltage
• Cost and performance
Outline
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Periodic Table & Electro Negativity
III IV V
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• Al/Ga/In Nitride system (“III-V”) stems from LEDs
• By tuning the In %, the full visible spectrum can be covered (photon emission), Direct bandgap
• Bandgap engineering by tuning Al % for power devices
• 2 Nobel prizes in Physics
• Alferov et al., 2000
• Akasaki et al., 2014
GaN/AlGaN/InAlGaN (III-V)
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Crystal Structures. Polar vs non-polar
Si, SiC, Diamond GaN, AlN Ga2O3, In2O3
Cubic Wurtzite Monoclinic
Note : the number of atoms per unit cell, the symmetry of the cell and the mass of
the elements determines the thermal conductivity of the material.
Ionic bond
polar
Covalent bond
Non-polar
Ionic bond
polar
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AlGaN/GaN Lateral HEMT Devices
AlGaN/GaN High Electron Mobility Transistors feature :
Low Ron due to high 2DEG density with ns~9x1012 cm-2 and high mobility (~2000 cm2/V.s)
High breakdown because of high bandgap (3.4 eV)
Low capacitance : no junctions to deplete (un-doped)
Si
High mobGaN
S D
Source DrainGate
GaN
Al Ga Nx 1-x
PSP
PSPPPE
Si N3 4
Al Ga N buffer-layersx 1-x
Silicon wafer
AlN nucleation layer
Device Property
Material Property
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GaN Crystal Structure—Wurtzite
• GaN has a Wurtzite structure, thermodynamically stable.
• Growth is along the c-axis, can be Ga-face or N-face. Two interpenetrating hexagonal close-packed sublattices.
Can be grown on (111) Si (hexagonal)
View in <111> direction
Direct bandgap
Two lattice constants
a = 3.189 Å
c = 5.186 Å
c
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Ga face
Spontaneous polarization
Spontaneous Polarization due to electro-negativity difference between N-atoms and Ga-atoms (binary crystal).
• Pauling’s electronegativity : N=3.4, Ga=1.8, Al=1.6
Poisson’s equation yields ssurf
Results in a polarization field P
AlN
•Eg=6.2eV
•Ecrit=11MV/cm
GaN
•Eg=3.4eV
•Ecrit=3MV/cmGaN (relaxed) PSP
-ssurf
+ssurf
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sint
Spontaneous and piezo-electric polarization
GaN (relaxed)
Al Ga Nx 1-x
PSP
PSPPPE
• Al(Ga)N has larger polarization field than GaN (due to larger
Electro-negativity difference)
• Thin AlGaN layer strained piezo-electric pol.
• Induced net positive charge at the AlGaN/GaN interface (but inside
the AlGaN !) is very large !
– HEMT ns~ 1013 cm-2 Typical MOSFET ns ~1012 cm-2
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Solving the Poisson equation—1D
• Ohmic contacts at bottom and top of the structure
• Charge neutrality : Electrons compensate the net positive polarization charge, i.e. creation of a 2DEG
• Leads to the creation of a quantum well at the AlGaN/GaN interface (but in the GaN layer !)
s2DEG= -sint
Conduction and
valence band offsets
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2DEG is a sheet of electrons
• Density ns (set by barrier design)
• Mobility µN
Device Engineering (AlGaN/GaN)
0123456789
101112131415
0 5 10 15 20 25 30 35 40
Ns
x1
012
[c
m-2
]
Barrier Thickness [nm]
0.30
0.19
0.25
𝑅𝑠ℎ𝑒𝑒𝑡 =1
𝑞.𝑛𝑠.𝜇𝑁[Ω/]
[Al]%
Limitations :
• If the (strained) AlGaN
barrier is too thick, it will
crack.
• The higher the [Al]%, the
lower the critical thickness
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AlxInyGa1-x-yN quarternary alloys coherently grown on GaN
• Lattice matched (reliability?), Polarization matching (E-mode)
• Higher sheet density (lower Ron) & larger bandgap
Polarization Engineering : Quarternary alloys
DJ Jena et al, 2010
Polarization Engineering
Reduces Ron by 2-3X
>2X
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• Semiconductor is un-doped i.e. behaves like a dielectricElectric field is rectangular
Ron/Vbd of a HEMT (drift region only !)
Rsh
Ec
Ec
L
L
𝑹𝒐𝒏 =𝟏
𝒒.𝒏𝒔.𝝁𝑵.
𝑽𝒃𝒅𝟐
𝑬𝒄𝟐
• Surface field shaping and
dynamic effects might result in
more triangular electric field
𝑹𝒐𝒏 =𝟒
𝒒.𝒏𝒔.𝝁𝑵.
𝑽𝒃𝒅𝟐
𝑬𝒄𝟐
GS
D
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• The resistance of a thin sheet with uniform doping (e.g. 2DEG). Conveniently expressed in Ω/square, or Ω/
• Just count #squares parallel to the current flow
Depends on carrier density (ns) and mobility
Sheet Resistance
RR
2R
R/2
𝑅𝑠ℎ𝑒𝑒𝑡 =1
𝑞.𝑛𝑠.𝜇𝑁[Ω/]
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• Power devices=material properties
• 1D limit for a vertical transistor
• Resurf effect (2D)
• Non-polar and polar materials
• Concept of polarization charge
• Simple band structure
• HEMT “High Electron Mobility Transistor”
• HEMT versus vertical power device
• Ron and Capacitance versus Voltage
• Cost and performance
Outline
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Summary : Ron versus Vbd for different device concepts
1D unipolar device :
16/07/201938
2D unipolar Super Junction device :
Lateral hetero-structure HEMT : 𝑹𝒐𝒏 =𝟏
𝒒.𝒏𝒔.𝝁𝑵. 𝑽𝒃𝒅
𝟐
𝑬𝒄𝟐
𝑹𝒐𝒏 =𝟐. 𝑽𝒃𝒅
𝑬𝑪𝟐. 𝜺. 𝝁𝑵
𝑹𝒐𝒏 =𝟒.𝑽𝒃𝒅
𝟐
𝑬𝑪𝟑. 𝜺. 𝝁𝑵
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• AlGaN/GaN HEMT with rectangular field will go beyond the 1D GaN limit.
• By introducing polarization engineering (InAlN), even the Ga2O3 1D limit is broken.
Ron/Vbd of a HEMT (drift region only !)
0.001
0.01
0.1
1
10
100 1000R
on
(mΩ.c
m2)
Vbd (V)
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The Baliga FOM revisited
Si SJ SiC
TrenchMOS
GaN
V-MOS
Ga2O3 HEMT
Rcont Very low low <5% <5% ~10%
Rsubs <3mΩ.cm 20mΩ.cm 10mΩ.cm 6mΩ.cm NA
Rdrift
Rchan low high Medium ? Very low
𝑹𝒐𝒏 =𝟒. 𝑽𝒃𝒅
𝟐
𝑬𝑪𝟑. 𝜺. 𝝁𝑵
𝑹𝒐𝒏 =𝟐. 𝑽𝒃𝒅
𝑬𝑪𝟐. 𝜺. 𝝁𝑵
𝑹𝒐𝒏 =𝟏
𝒒.𝒏𝒔.𝝁𝑵.
𝑽𝒃𝒅𝟐
𝑬𝒄𝟐
𝑹𝒐𝒏 =𝟒. 𝑽𝒃𝒅
𝟐
𝑬𝑪𝟑. 𝜺. 𝝁𝑵
𝑹𝒐𝒏 =𝟒. 𝑽𝒃𝒅
𝟐
𝑬𝑪𝟑. 𝜺. 𝝁𝑵
S
D
Rcont
Rcont
Rchan
Rdrift
RsubsSource DrainGate
GaN
Al Ga Nx 1-x
PSP
PSPPPE
Si N3 4
Al Ga N buffer-layersx 1-x
Silicon wafer
AlN nucleation layer
N+sub
N PP
N+sub
N PP
N+sub
N PP
N+sub
N PP
N+sub
N PP
N+sub
N PP
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The Baliga FOM revisited
0.01
0.1
1
10
10 100 1000 10000
Ro
n (
mΩ.c
m2)
Vbd (V)
SiC
GaN
Ga2O3
S
D
Rcont
Rcont
Rchan
Rdrift
Rsubs
Si SJ
• p=6µm
HEMTs
• Ec=2MV/cm (triang field)
• E-mode (Rch=2XRaccess)
SiC
• TrenchMOS
• Subs=100µm, 20mΩ.cm
• p=5µm, ch=100cm2/V.s
GaN
• V-MOS
• Subs=100µm, 10mΩ.cm
• p=10µm, ch=1500cm2/V.s
Ga2O3
• Schottky diode
• Subs=200µm, 6mΩ.cm
• bulk=300cm2/V.s
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1D-Jct transistor, Cdepl is dependent on voltage
Super-junction device
Depletion of Qopt (Qopt=313nC/cm2)
Large junction area, will deplete at ~25V
Once depleted, capacitance is very low
Capacitances : jct transistor vs HEMT
𝐶𝑑𝑒𝑝𝑙 =𝜖
𝑊𝐷; 𝑊𝐷 =
2.𝜖.(𝑉𝑎𝑝𝑝𝑙𝑖𝑒𝑑+𝑉𝑏𝑖)
𝑞.𝑁𝐷
𝑄𝑂𝑆𝑆𝑉
= 2. 𝜖. 𝑞. 𝑁𝐷. 𝑉1/2
𝐸𝑂𝑆𝑆𝑉
=1
32. 𝜖. 𝑞. 𝑁𝐷. 𝑉3/2
𝑄𝑂𝑆𝑆 = 𝜖. 𝐸𝐶
𝐸𝑂𝑆𝑆 =1
3𝜖. 𝐸𝐶.V
𝑁𝐷 =𝜖. 𝐸𝐶
2
2. 𝑞. 𝑉𝐵𝐷
𝑬𝑪. 𝜺𝒔 = 2. 𝑞. 𝑁𝑛. 𝑊𝑛 = 𝑸𝒐𝒑𝒕[𝐶
𝑐𝑚2]
E-field
P+
n+
n p
Ec
Ec
WnWp
t
p
𝑄𝑂𝑆𝑆𝑉
= 313. ℎ𝑝.𝑉
𝐸𝐶
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HEMT : capacitance is a sum of dielectric capacitances, each independent of voltage
• Field plate capacitors that deplete the 2DEG
• Substrate capacitance
• Fringe capacitances
Capacitances : jct transistor vs HEMT
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• Qoss and Eoss are ~ to ε.Ec [in cm-2, per unit area]
• 1S--Si is better than GaN and SiC and Ga2O3
• AlGaN/GaN HEMT behaves differently
• Si SJ has high Qoss due to large effective junction area
Capacitances
0
500
1000
1500
2000
0 200 400 600 800 1000 1200E
os
s (
J/c
m2)
Vapplied (V)
Si
SiC
GaN
Ga2O3
0
1000
2000
3000
4000
5000
0 200 400 600 800 1000 1200
Qo
ss
(n
C/c
m2)
Vapplied (V)
Si
AlGaN/GaN
Si SJ
SiC
GaN
Ga2O3
ε.EC
ε.EC
ε.EC
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• Power devices=material properties
• 1D limit for a vertical transistor
• Resurf effect (2D)
• Non-polar and polar materials
• Concept of polarization charge
• Simple band structure
• HEMT “High Electron Mobility Transistor”
• HEMT versus vertical power device
• Ron and Capacitance versus Voltage
• Cost and performance
Outline
![Page 46: Semiconductor Power Devices : Part 1 : From Junction to Material … · 2019-08-12 · Trench based Super Junction Device cross-section n ++ i-epi i-epi n ++ i-epi n ++ n p i-epi](https://reader033.vdocuments.us/reader033/viewer/2022042712/5fa247a6510aeb254d4d5b35/html5/thumbnails/46.jpg)
The Baliga FOM revisited
Si SJ SiC
TrenchMOS
GaN
V-MOS
Ga2O3
Schottky
HEMT
Rcont Very low low <5% <5% ~10%
Rsubs <3mΩ.cm 20mΩ.cm 10mΩ.cm 6mΩ.cm NA
Rdrift
Rchannel low high Medium ? Very low
Capacitance low medium medium high low
Wafer (mm) 200-300 100-150 75-100 50-100 150-200
Cost/wfr ($) lowest high Very high medium low
Robustness High High Some ? None
𝑹𝒐𝒏 =𝟒. 𝑽𝒃𝒅
𝟐
𝑬𝑪𝟑. 𝜺. 𝝁𝑵
𝑹𝒐𝒏 =𝟐. 𝑽𝒃𝒅
𝑬𝑪𝟐. 𝜺. 𝝁𝑵
𝑹𝒐𝒏 =𝟏
𝒒.𝒏𝒔.𝝁𝑵.
𝑽𝒃𝒅𝟐
𝑬𝒄𝟐𝑹𝒐𝒏 =
𝟒. 𝑽𝒃𝒅𝟐
𝑬𝑪𝟑. 𝜺. 𝝁𝑵
𝑹𝒐𝒏 =𝟒. 𝑽𝒃𝒅
𝟐
𝑬𝑪𝟑. 𝜺. 𝝁𝑵
Source DrainGate
GaN
Al Ga Nx 1-x
PSP
PSPPPE
Si N3 4
Al Ga N buffer-layersx 1-x
Silicon wafer
AlN nucleation layer
N+sub
N PP
N+sub
N PP
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Metal Oxides : The Case of Ga2O3
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α-Ga/Al/In/2O3 (III-VI)
• α-Ga2O3, α-Al2O3 and α-In2O3 have same crystal structure
• Alloys & Hetero-structures
• P-type !
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α-Ga2O3
• Rhombohedral ; stable till ~800oC
• Eg=5.6eV
• Ec=10MV/cm
• Alloys / heterostructureswith Al/Ir/Rh/In2O3
• N-type doping by Sn, Si, …
• P-type ! Ir/Rh/2O3
• Grown on Sapphire + liftoff
Ga2O3 has many poly-types
β-Ga2O3
• Monoclinic, stable till
melting point (~1700oC)
• Eg=4.8eV
• Ec=8MV/cm
• No alloys or
heterostructures
• N-type doping by Sn, Si, ..
• No P-type ! (Mg, deep acc)
• Grown from the melt (CZ)
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How Cool is That !
• Metal Oxides are transparent to the visible light
• They have a direct bandgapopto-electronic devices
• Exfoliation of 20µm filmsflexible electronics
16/07/201950
α-Ga2O3 on Sapphire β-Ga2O3 Schottky diodes Exfoliation
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The Hype Cycle for Electronic Technologies
SiC diodes
SiC transistors
GaN HEMTs
Vertical GaNGa2O3 diodes
AlN
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The Evolution of Power Devices
16/07/201952
1940-1970
Vacuum tube
Solid State Relays
1980
HEXFET
1990
IGBT
2000
Super Junction
2010
SiC Diode,
MOSFET, SJ
2020
Al(In)GaN/GaN
HEMT
….
2020+
Metal Oxides
Junction Engineering
Materials Engineering
Metal NitridesSilicon Silicon Silicon Silicon Carbide
Substrate
GaN
AlGaN2DEG
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Semiconductor Power Devices : Part 2 : Reliability Basics
Peter Moens
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• Reliability Basics
• What is Reliability ?
• Reliability Distribution Functions & Failure rates
• Lognormal and Weibull Statistics
• Acceleration testing and Lifetime Prediction
Outline
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re·li·a·bil·i·ty rəˌlīəˈbilədē/ the quality of being trustworthy
or of performing consistently well
• Reliability = predict and guarantee a certain function over the full lifetime of the product
• What is the desired “performance” ?
• What is the desired “lifetime” ?
• How to predict ?
• Reliability = Quality over time
• Reliability = physics, mathematics, statistics, economics and psychology
• Reliability = engineering in its most practical form
Reliability : What ?
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No reliability
=
No Product
=
No Money
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• Example : product return due to dropping of a smartphone from a certain height.
Product Reliability : the economical approach
0
0.2
0.4
0.6
0.8
1
0
1
2
3
4
5
0 0.5 1 1.5 2 2.5 3
c.d
.f.
p.d
.f.
Height (m)
Customer expectationIdeal product performance
0
0.2
0.4
0.6
0.8
1
0
1
2
3
4
5
0 0.5 1 1.5 2 2.5 3
c.d
.f.
p.d
.f.
Height (m)
Customer expectationProduct performanceIdeal product performance
Product Cost
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• Consumer
• Industrial
• Automotive/Medical
• Military
• Space
Electronic Product Reliability Grades
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• Samples shipped to the customer should obey the Poisson distribution function
• Probability that an event (failure) occurs in a fixed interval of time, is constant, and independent of the time since the last event
• For large sample size, the Poisson distribution is a good approximation of the Binomial distribution (“Poisson limiting theorem”)
• 𝑃 𝑥 =𝑛!
𝑥!∗ 𝑛−𝑥 !𝑝𝑥 ∗ 1 − 𝑝 𝑛
Sample size ? How many parts to test ?
P(x) : probability of having x failures
n : sample size
p : probability of having a single fail
x : number of failures
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𝑃 𝑥 =𝑛!
𝑥! ∗ 𝑛 − 𝑥 !𝑝𝑥 ∗ 1 − 𝑝 𝑛
E.g. : Failure rate of a product is 100ppm. How many samples should be tested at CL=90% to prove you have 0 fails during qual ?
Sample size from Binomial distribution
P(x) : probability of having x failures : 0.1
n : sample size : ?
p : probability of having a single fail : 1e-4
x : number of failures : 0
1000
10000
100000
1000000
1 10 100 1000
Sam
ple
siz
e
ppm
Binomial DistributionNo Failures
CL=95%
CL=90%
CL=60%
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100
1000
10000
100000
1000000
1 10 100 1000 10000
Sam
ple
siz
eppm
X2 DistributionCL=90%
c=2
c=1
c=0
• Sampling statistics allow you to draw conclusion on an unknown distribution based on sampling
• 2 distribution is the most widely used
Sampling Statistics
– For Hypothesis testing, Confidence Intervals, ML etc,
– Distribution of the sum of squares of normally distributed variables
– 2 test is part of t-test or F-test
– N½.2 (2c+2;1-CL).(1/ppm-0.5)
100
200
300
400
500
600
700
800
900
1000
0 1 2 3 4 5
Sam
ple
siz
e# rejects
X2 Distribution10000 ppm
CL=95%
CL=90%
CL=60%230
389
532
668
799
389
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Accelerated testing : JEDEC Testing—designed for Si !
• JESD47 : (for Si) use an apparent Ea=0.7eV
• Tuse=55oC, Tstress=125oC 1000h at T=125oC equals 9 yrs at T=55oC
• Tuse=70oC, Tstress=150oC 1000h at T=150oC equals 10 yrs at T=70oC
• Ea for GaN ? Little data available. Ea=2.1 eV ? [Whitman, MR 2014]
• Larger Ea yields stronger impact of temperature on lifetime
1000h
10 Yrs
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• 1FIT=1 failure per 109 device.hours
• Acceleration factors for temperature and field
• Stress at highest Voltage : AFV=1
• Use Arhenius for AFT with Ea=0.7 eV (Si), Tstress=150oC• Tuse = 55ºC for consumer
• Tuse = 70ºC for commercial
• Tuse = 85ºC for industrial
• Tstress=1008 hrs
FIT rates (Failure in time)
0
10
20
30
40
50
60
70
80
90
100
100 1000 10000
Fit
Ra
te
# samples
X2 Distribution0 failuresTstress=150oC, Tuse=55oC
CL=95%
CL=90%
CL=60%
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What comes to mind when you hear “JEDEC Qualification”: a typical qualification table
JEDEC Testing
REQUIRED RELIABILITY TESTS Parameter
Part Type Test Conditions Duration measurements @ Quantity
Part no “X” TC -55°C/150°C 1000 cy 0/168/500/1000 3 x 77
H3TRB 85°C/85%RH/100V 1000 hrs 0/168/500/1000 3 x 77
HTRB 150°C/960V 1000 hrs 0/168/500/1000 3 x 77
HTGB 150°C/20V 1000 hrs 0/168/500/1000 3 x 77
IOL delta Tj = 100°C 5,000 cy 0/2500/5000 3 x 77
AC 121°C/15psig 96 hrs 0/96 3 x 77
When you pass the JEDEC test, you have proven that (with small sample size) :
For a binomial distribution (Poisson distribution)Constant i.e. constant failure rate
• FIT rate<18 for CL=60% (2 estimate)
• FIT rate<38 for CL=90% (2 estimate)
• For FIT<10, one would need to test >1000 samples for 1008hrs at CL=90%, with no
failures.
Actual FIT rates, EPC Reliability Report #7
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JEDEC testing for WBG—makes sense ?
Si
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The Bath-tub Curve
• Failure (Hazard) rate as a function of time
Quality failures
Mfc defects
Stress related failures
Latent defects
Wear out failures
Accumulated damage
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First commercial flight on 12 Jan 1976
Crashed on 25 Jul 2000, 109 lives lost (Paris CDG)
Last commercial flight on 24 Oct 2003
Crash of the Concorde (Mach 2)
• Was the Concorde less reliable after the crash ?
No construction
failure. Airplane
functioned
normally
No material or
inherent design
failure
Typical example of a
random failure by an
external cause
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No Statistics=No Reliability
Exciting Boring
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The Bath-tub Curve and Failure Functions
• Failure (Hazard) rate as a function of time• Poisson distribution
– Constant
• Normal distribution
– Increasing
• LogNormal distribution
– normal of ln(t)
– Increasing and
decreasing
• Weibull distribution
– Increasing, constant
and decreasing Quality failures
Mfc defects
Stress related failures
Latent defects
Wear out failures
Accumulated damage
ln(− ln 1 − 𝐹 𝑡 ) = 𝛽. ln 𝑡 − 𝛽. ln()
F(t) = Cumulative failure function
= Weibull shape factor
CD
F
=5
=1.5=1.0
=0.5
Lo
gN
orm
al
We
ibu
ll
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Weibull distribution is used for modeling “percolation” events. Has been widely used to model degradation of dielectrics.
Weibull distributed parameter is Charge-to-Breakdown (“Qbd”)
To assess Qbd, constant current stress has to be applied (Q=I.t)
Not practical, since lifetime acceleration/prediction requires voltage
Constant voltage stress is used instead (but is actually not correct).
Weibull—Percolation
-6
-5
-4
-3
-2
-1
0
1
2
10 100 1000 10000
ln(-
ln(1
-F))
Time-to-fail (s)
t63%
ln(− ln 1 − 𝐹 𝑡 ) = 𝛽. ln 𝑡 − 𝛽. ln()
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• Weibull and LogNormal differ in low percentiles
• LogNormal more optimistic
• All data for 100mΩ devices, at T=150oC
Weibull versus LogNormal distribution (eGaN gate reliability)