selectivity in atomic layer etching using sequential, self
TRANSCRIPT
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Selectivity in Atomic Layer Etching Using Sequential, Self-Limiting
Thermal Reactions
Younghee Lee1, Craig Huffman2 and Steven George1,3
1Depts. of Chemistry & 3Mechanical Engineering,University of Colorado, Boulder, Colorado 80309.
2SUNY Poly SEMATECH, Albany, New York 12203.
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Outline
1. Al2O3 ALE using HF and Sn(acac)2 or Al(CH3)3 as metal precursors.
2. Selectivity using Sn(acac)2, Al(CH3)3, AlCl(CH3)2 and SiCl4 as metal precursors.
3. Selectivity in ALE based on temperature.
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Requirements for Sequential, Self-Limiting Thermal Reactions for ALE
Need spontaneous, sequential, self-limitingthermal reactions that remove with atomic control.
Spontaneous requires thermochemically favorable.Self-limiting requires saturation of surface reaction.
Removal requires volatility of reaction product.
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Al2O3 ALE Using HF-Pyridine & Sn(acac)2 as Reactants
Y. Lee & S.M. George, ACS Nano 9, 2061 (2015).
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200°Con Al2O3
Sn(acac)2 HF1 - 30 - 1 - 30
Y. Lee & S.M. George, ACS Nano 9, 2061 (2015).
100 ALE cyclesMass change per cycle = -8.4 ng/cm2
Etch rate = 0.28 Å/cycle
Al2O3 ALE Using HF & Sn(acac)2
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Linear Decrease of Al2O3 Film Thickness vs Number of Al2O3 ALE Cycles
XRR measurements yield etch rate = 0.27 Å/cycle
Confirm with spectroscopic
ellipsometry (SE)
Y. Lee & S.M. George, ACS Nano 9, 2061 (2015).
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Al2O3 ALE via Fluorination & Ligand Exchange
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Metal Precursors for ALE
Requirements for Metal Precursor:1. Accept fluorine from metal fluoride
2. Donate ligand to metal in metal fluoride3. Metal reaction product is stable & volatile
Possible Metal Precursor:Same precursor as used for ALD of etched material
e.g. Al(CH3)3 for Al2O3 ALE
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Al2O3 ALE Using HF-Pyridine & Al(CH3)3 as Reactants
Y. Lee, J.M. DuMont & S.M. George, Chem. Mater. (In Press).
Al(CH3)3
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100 ALE CyclesMass change per
cycle = -15.9 ng/cm2
Etch rate = 0.51 Å/cycle
Al2O3 ALE Using HF & Al(CH3)3
Y. Lee, J.M. DuMont & S.M. George, Chem. Mater. (In Press).
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Linear Decrease of Al2O3 Film Thickness vs Number of Al2O3 ALE Cycles
XRR measurements yield etch rate = 0.46 Å/cycle
Confirm with spectroscopic
ellipsometry (SE)
Y. Lee, J.M. DuMont & S.M. George, Chem. Mater. (In Press).
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Al2O3 ALE via Fluorination & Ligand Exchange
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Outline
1. Al2O3 ALE using HF and Sn(acac)2 or Al(CH3)3 as metal precursors.
2. Selectivity using Sn(acac)2, Al(CH3)3, AlCl(CH3)2 and SiCl4 as metal precursors.
3. Selectivity in ALE based on temperature.
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Selective ALE for Different Materials
Different materials represented by various
colors*
Goal to etch just one material in a background
of other materials
Selectivity determined by stability & volatility of
reaction products
*Adapted from C.T. Carver et al., ECS J. Solid State Sci. Technol. 4, N5005 (2015).
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Selectivity During ALE
Requirements for Metal Precursor:1. Accept fluorine from metal fluoride
2. Donate ligand to metal in metal fluoride3. Metal reaction product is stable & volatile
Strategy for Selectivity:Use metal precursors with ligands that yield stable &
volatile reaction products with target metals
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ALE Using HF & Sn(acac)2
Al2O3, HfO2, ZrO2, SiO2, Si3N4, TiN
Selective etching of Al2O3, HfO2 & ZrO2.
Al, Hf & Zr form stable & volatile acac complexes.
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Al2O3, HfO2 & ZrO2 ALE Using HF & Sn(acac)2
Al2O3, HfO2, ZrO2
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ALE Using HF & Al(CH3)3 (TMA)
Al2O3, HfO2, ZrO2, SiO2, Si3N4, TiN
Selective etching of Al2O3 & HfO2.
Al & Hf form stable & volatile complexes with methyl groups.
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Al2O3, HfO2 & ZrO2 ALE Using HF & Al(CH3)3 (TMA)
Al2O3, HfO2, ZrO2
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Understanding Selectivity
Al2O3 ALE with Al(CH3)3. Ligand-exchange.
Stable Al-CH3 reaction product.
ZrO2 ALE with Al(CH3)3. No ligand-exchange. Unstable
Zr-CH3 reaction product.
SiO2 ALE with Al(CH3)3. No ligand-
exchange. Si-F bond too stable.
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ALE Using HF & AlCl(CH3)2 (DMAC)
Al2O3, HfO2, ZrO2, SiO2, Si3N4, TiN
Selective etching of Al2O3, ZrO2 & HfO2.
Al, Zr & Hf form stable & volatile complexes
with chloride or methyl groups.
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Al2O3, HfO2 & ZrO2 ALE Using HF & AlCl(CH3)2 (DMAC)
Al2O3, HfO2, ZrO2
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ALE Using HF & SiCl4
Al2O3, HfO2, ZrO2, SiO2, Si3N4, TiN
SiCl4 350°C
ZrO2HfO2
TiN
SiO2
Al2O3
Si3N4Selective etching of
ZrO2 & HfO2.
Zr & Hf form stable & volatile complexes
with chloride groups.
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Al2O3, HfO2 & ZrO2 ALE Using HF & SiCl4
Al2O3, HfO2, ZrO2
SiCl4 350°C
Why no etching of Al2O3 with SiCl4?
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SiCl4(g) + HfF4(s) → SiF4(g) + HfCl4(g)
SiCl4(g) + ZrF4(s) → SiF4(g) + ZrCl4(g)
SiCl4(g) + 4/3AlF3(s) → SiF4(g) + 4/3AlCl3(g)
Ligand-Exchange Thermochemistry Explains No Al2O3 ALE
Positive ∆G for SiCl4 ligand-exchange for Al2O3 ALE.
Negative ∆G for SiCl4 ligand-exchange >150°C for HfO2 &
ZrO2 ALE.
∆G = 0
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Outline
1. Al2O3 ALE using HF and Sn(acac)2 or Al(CH3)3 as metal precursors.
2. Selectivity using Sn(acac)2, Al(CH3)3, AlCl(CH3)2 and SiCl4 as metal precursors.
3. Selectivity in ALE based on temperature.
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Selectivity Based on Temperature for Al2O3 ALE Using Different
Metal Precursors
Different etch rates at various temperatures for different metal
precursors.
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Selectivity Based on Temperature for ALE Using SiCl4 as Metal Precursor
ZrO2
HfO2
Al2O3
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Conclusions
1. Thermal ALE possible using sequential, self-limiting fluorination & ligand-exchange reactions.2. Thermal ALE using HF and either Sn(acac)2,
Al(CH3)3, AlCl(CH3)2 or SiCl4 as metal precursors.3. Selective ALE is possible. Depends on stability
and volatility of reaction products.4. Temperature provides additional pathway for
selective ALE.