sel heavy ion test report of 256kx16 bit high ... - escies

Prepared by Marc Poizat, Michele Muschitiello (TEC-QEC) Reference ESA-TECQEC-TR-1011 Issue 1 Revision Date of Issue 27/08/2015 Status Authorised Document Type TR Distribution

ESA UNCLASSIFIED – For Official Use

SEL Heavy Ion Test Report of 256Kx16 Bit High Speed SRAM (K6R4016V1C-TI10) from Samsung

/9 ESA Standard Document Date 27/08/2015 Issue 1 Rev


Table of contents:

1 INTRODUCTION ................................................................................................................................ 42 APPLICABLE DOCUMENTS ............................................................................................................... 43 DEVICES TESTED .............................................................................................................................. 44 TEST FACILITY AND TEST SYSTEM .................................................................................................. 65 TEST CONDITIONS ............................................................................................................................ 66 TEST METHOD .................................................................................................................................. 77 TEST RESULTS .................................................................................................................................. 88 CONCLUSIONS .................................................................................................................................. 89 APPENDIX ......................................................................................................................................... 9



1 INTRODUCTION

This study was undertaken in the frame of the Proba 3 project to determine the single event latchup susceptibility of the 256Kx16 Bit High Speed SRAM (K6R4016V1C-TI10) from Samsung. The device was monitored for destructive events induced by exposing it to a heavy ion beam at the UCL Heavy ion facility. Proba-3 is ESA’s – and the world’s – first precision formation flying mission. A pair of satellites will fly together maintaining a fixed configuration as a ‘large rigid structure’ in space to prove formation flying technologies.

The mission will demonstrate formation flying in the context of a large-scale science experiment. The paired satellites will together form a 150-m long solar coronagraph to study the Sun’s faint corona closer to the solar rim than has ever before been achieved. Beside its scientific interest, the experiment will be a perfect instrument to measure the achievement of the precise positioning of the two spacecraft.

2 APPLICABLE DOCUMENTS

AD1: ESCC25100 Single Event Effects Test Method and Guidelines AD2: Datasheet Samsung K6R4016V1C-TI10

3 DEVICES TESTED

Part Type K6R4016V1C-TI10, Manufacturer Samsung Part Function SRAM Technology CMOS Date Code 419 (Year and week) Part Marking SAMSUNG 419 K6R4016V1C-TI10 TZAL32DD Korea Sample Size 10

The dice of the parts were exposed by removing the epoxy on the top. The epoxy removal was achieved by chemical etch (wet and/or dry) before soldering the parts on the test board.



Figure 1 the part marking on the top plastic package(TSOP44).

Figure 2 The exposed die after the chemical etch of the covering epoxy. The measured die size is about 34.6 mm2.

Figure 3 Detail of the die markings



4 TEST FACILITY AND TEST SYSTEM

Facility: UCL HIF with high LET cocktail. If possible, the new high energy Xe beam will be used (Energy = 995MeV, LET = 62.5MeV.cm2/mg, range = 73.1µm)

Flux: Maximum 1 x 105 particles/cm2/s Fluence: All tests will run up to a fluence of 1 x 107 particles/cm2 or until 100 destructive

events occurred

Ion Energy(1) (MeV)

LET(1) (MeV•cm2/mg)

Range(1) (µm)

13C4+ 131 1.3 269.3

14N4+ 122 1.9 170.8

20Ne6+ 190 3.6 150.6

40Ar12+ 379 10.0 120.5

58Ni18+ 582 20.4 100.5

83Kr25+ 779 32.2 95.0

124Xe35+ 995 62.5 73.1

note (1): at the device

The following test equipment will be used:

- Power supply (Keithley 2612B) - Oscilloscope Tektronik TDS 3054B - Latch-up Tester 30463 TRAD

5 TEST CONDITIONS

Test Temperature: Room temperature. Note: the device will be operated at temperatures < 25degC during the Proba 3 mission, hence SEL testing at high temperature is not performed.

Bias Conditions: Supply voltages=+3.45V ; GND=0V



CY7C1059DV33-10ZSXI

100100

100100

100100

100100

100100

100100

100100

100100

100100

100100

100

100

100

R141426

GND

GND

GNDCY7C1059DV33-10ZSXI

100100

100100

100100

100100

100100

100100

100100

100100

100100

100100

100

100

100

R141426

GND

GND


100100

100100

100100

100100

100100

100100

100100

100100

100100

100100

100

100

100

R141426

GND

GND


100100

100100

100100

100100

100100

100100

100100

100100

100100

100100

100

100

100

R141426

GND

GND


100100

100100

100100

100100

100100

100100

100100

100100

100100

100100

100

100

100

R141426

GND

GND

GND

IC2A03

A14

A25

A36

A47

A516

A617

A718

A819

I/O00 9

I/O01 10

I/O02 13

I/O03 14

I/O04 31

I/O05 32

I/O06 35

I/O07 36A920

A1026

A1127

A1228

A1329

A1430 WE 15CE 8

OE 37

A1538

A1639

+3V 11

GND 12

+3V 33

GND 34A1740

A1841

A1925

R34R24

R35R25

R36R26

R37R27

R38R28

R39R29

R40R30

R41R31

R42R32

R43R33

R46

R45

R44

X2

IC3A03

A14

A25

A36

A47

A516

A617

A718

A819

I/O00 9

I/O01 10

I/O02 13

I/O03 14

I/O04 31

I/O05 32

I/O06 35

I/O07 36A920

A1026

A1127

A1228

A1329

A1430 WE 15CE 8

OE 37

A1538

A1639

+3V 11

GND 12

+3V 33

GND 34A1740

A1841

A1925

R57R47

R58R48

R59R49

R60R50

R61R51

R62R52

R63R53

R64R54

R65R55

R66R56

R69

R68

R67

X3

IC4A03

A14

A25

A36

A47

A516

A617

A718

A819

I/O00 9

I/O01 10

I/O02 13

I/O03 14

I/O04 31

I/O05 32

I/O06 35

I/O07 36A920

A1026

A1127

A1228

A1329

A1430 WE 15CE 8

OE 37

A1538

A1639

+3V 11

GND 12

+3V 33

GND 34A1740

A1841

A1925

R80R70

R81R71

R82R72

R83R73

R84R74

R85R75

R86R76

R87R77

R88R78

R89R79

R92

R91

R90

X4

IC5A03

A14

A25

A36

A47

A516

A617

A718

A819

I/O00 9

I/O01 10

I/O02 13

I/O03 14

I/O04 31

I/O05 32

I/O06 35

I/O07 36A920

A1026

A1127

A1228

A1329

A1430 WE 15CE 8

OE 37

A1538

A1639

+3V 11

GND 12

+3V 33

GND 34A1740

A1841

A1925

R103R93

R104R94

R105R95

R106R96

R107R97

R108R98

R109R99

R110R100

R111R101

R112R102

R115

R114

R113

X5

IC1A03

A14

A25

A36

A47

A516

A617

A718

A819

I/O00 9

I/O01 10

I/O02 13

I/O03 14

I/O04 31

I/O05 32

I/O06 35

I/O07 36A920

A1026

A1127

A1228

A1329

A1430 WE 15CE 8

OE 37

A1538

A1639

+3V 11

GND 12

+3V 33

GND 34A1740

A1841

A1925

R11R1

R12R2

R13R3

R14R4

R15R5

R16R6

R17R7

R18R8

R19R9

R20R10

R23

R22

R21

X1

VCC2

VCC2

VCC3

VCC3

VCC4

VCC4

VCC5

VCC5

VCC1

VCC1

1.0

Operating frequency: Static condition

6 TEST METHOD

The goal of this test is to evaluate the potential latchup sensitivity of the Device Under Test (DUT). During the test, the power supply is applied to the DUT via the latchup protection system TRAD 30463 (GUARD system). If the current in stand by condition as measured at the beginning of the irradiation is exceeded by 50% or by 5mA (whichever is the higher) during at least 5 ms (hold time), the latchup protection system is triggered and the DUT is powered off for 5 ms or more (Tc or cut off time). After Tc, the nominal biasing conditions of the DUT are resumed. Each time the SEL protection is triggered, the event is counted as one latchup. The figure below illustrates the latchup detection and protection scheme of the DUT.

A synoptic view of the test bench is given below:



7 TEST RESULTS

During testing, three devices were irradiated with Xenon beam at normal incidence up to a fluence of 1E7/cm2. No latchup occurred during the experiment yielding a threshold LET for latchup > 62.5MeV.cm2/mg.

8 CONCLUSIONS

The goal of this test was to assess the single event latchup susceptibility of the 256Kx16 Bit High Speed SRAM (K6R4016V1C-TI10) from Samsung (DC419). No latchup event was detected up to an LET of 62.5MeV.cm2/mg, which is compliant with the Proba3 requirements.

Power Supply Latchup Protection

System Device Under

Test

Oscilloscope



9 APPENDIX

The test sequence for the three tested devices is shown in the table below:

Nb

events

Cross

Section

Run Run

UCL Component Type of test Configuration

Frequency

(MHz)

Part

# T° Ion

Energy

(MeV)

Range

(µm)

LET

(MeV.cm2.mg-

1)

Tilt

(°)

LET Eff

(MeV.cm2.mg-

1)

Range

eff

(µm)

Flux Re

(#/cm2.sec)

Time

Re

(s)

Time

Re

(h:m:s)

Fluence

(#/cm2)

Run

Dose

(krad)

Total

Dose

(krad)

SEL SEL Comments

Start at 04:30am

8 211 K6R4016V1C SEL Static N/A 1 25 Xe 995 73 62.5 0 62.50 73.1 12,330 811 0:13:31 1.00E+07 10.000 10.000 0 0.00E+00 Start with flux 2E3, then increase up to 1.5E4

9 212 K6R4016V1C SEL Static N/A 3 25 Xe 995 73 62.5 0 62.50 73.1 15,032 157 0:02:37 2.36E+06 2.360 2.360 0 0.00E+00 Run aborted (Guard param modified while running)

10 213 K6R4016V1C SEL Static N/A 3 25 Xe 995 73 62.5 0 62.50 73.1 15,060 664 0:11:04 1.00E+07 10.000 12.360 0 0.00E+00

11 214 K6R4016V1C SEL Static N/A 5 25 Xe 995 73 62.5 0 62.50 73.1 15,152 660 0:11:00 1.00E+07 10.000 10.000 0 0.00E+00

sel heavy ion test report of 256kx16 bit high ... - escies

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