sct3030al : sic power mosfet · 2018-05-15 · oss c rss t a = 25ºc f = 1mhz v gs = 0v 0 5 10 15...

Data Sheet

www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.

SCT3030AL N-channel SiC power MOSFET

650V

70A

VDSS

ID

PD

RDS(on) (Typ.) 30mW

lOutline

lInner circuit

lPackaging specifications

TO-247N

Tube

-

Type

Packing

Reel size (mm)

C11

SCT3030AL

Basic ordering unit (pcs)

Tape width (mm) -

30

Marking

Taping code

lFeatures

262W

lApplication

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

5) Simple to drive

6) Pb-free lead plating ; RoHS compliant

Gate - Source voltage VGSS -4 to 22 V

lAbsolute maximum ratings (Ta = 25°C)

Symbol Value Unit

Drain - Source voltage

Continuous drain currentTc = 25°C

Tc = 100°C

Pulsed drain current

Parameter

ID,pulse *2 175

Junction temperature Tj 175 °C

Range of storage temperature Tstg -55 to +175 °C

A

VDSS 650 V

ID *1 70 A

ID *1 49 A

• Induction heating

• Motor drives

• Solar inverters

• DC/DC converters

• Switch mode power supplies

(1) Gate (2) Drain (3) Source

*1 Body Diode

(1) (2) (3)

1/13 2016.04 - Rev.A


Data SheetSCT3030AL

lThermal resistance

Parameter SymbolValues

UnitMin. Typ. Max.

UnitMin. Typ. Max.

Thermal resistance, junction - case RthJC - 0.44 0.57 °C/W

lElectrical characteristics (Ta = 25°C)

Parameter Symbol ConditionsValues

Drain - Source breakdown

voltageV(BR)DSS VGS = 0V, ID = 1mA 650 - - V

Zero gate voltage

drain currentIDSS

VDS = 650V, VGS = 0V

mATj = 25°C - 1 10

Tj = 150°C - 2

Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA

-

5.6 V

Gate - Source leakage current IGSS- VGS = -4V, VDS = 0V - - -100 nA

Gate threshold voltage VGS (th) VDS = 10V, ID = 13.3mA 2.7 -

Static drain - source

on - state resistanceRDS(on)

*3

VGS = 18V, ID = 27A

mWTj = 25°C - 30 39

Tj = 125°C - 39.6 -

- WGate input resistance RG f = 1MHz, open drain - 7

2/13 2016.04 - Rev.A


Data SheetSCT3030AL

*1 Limited only by maximum temperature allowed.

*2 PW 10ms, Duty cycle 1%

*3 Pulsed

lElectrical characteristics (Ta = 25°C)


UnitMin. Typ. Max.

S

Input capacitance Ciss

pFOutput capacitance Coss

Transconductance gfs *3

Reverse transfer capacitance -Crss f = 1MHz - 42

-

VGS = 0V - 1526 -

VDS = 500V - 89 -

VDS = 10V, ID = 27A

pF

Turn - on delay time td(on) *3 VDD = 300V, ID = 18A - 22 -

nsRise time tr

*3

Effective output capacitance,

energy relatedCo(er)

VGS = 0V

VDS = 0V to 300V- 230 -

Fall time tf *3 RG = 0W - 27 -

VGS = 18V/0V -

UnitMin. Typ. Max.

41 -

Turn - off delay time td(off) *3 RL = 17W - 48 -

mJ

Turn - off switching loss Eoff *3

- 112 -

Turn - on switching loss Eon *3 VDD = 300V, ID=27A

VGS = 18V/0V

RG = 0W L=250mH

*Eon includes diode

reverse recovery

- 168 -

Qg *3 VDD = 300V - 104 -

lGate Charge characteristics (Ta = 25°C)


- 9.4

V

- 42 -

Gate plateau voltage V(plateau) VDD = 300V, ID = 27A - 9.6 -

nCGate - Source charge Qgs *3 ID = 27A - 25 -

Gate - Drain charge Qgd *3 VGS = 18V

Total gate charge

3/13 2016.04 - Rev.A


Data SheetSCT3030AL

lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)


UnitMin. Typ. Max.

A

Inverse diode direct current,

pulsedISM

*2 - - 175 A

Inverse diode continuous,

forward currentIS

*1

Tc = 25°C

- - 70

V

Reverse recovery time trr *3

IF = 27A, VR = 600V

di/dt = 1100A/ms

- 26 - ns

Reverse recovery charge Qrr *3

Forward voltage VSD *3 VGS = 0V, IS = 27A - 3.2 -

- 130 - nC

Peak reverse recovery current Irrm *3 - 10 - A

4/13 2016.04 - Rev.A


Data SheetSCT3030AL

lElectrical characteristic curves

0

50

100

150

200

250

300

0 50 100 150 200

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Ta = 25ºC Single Pulse

0.1

1

10

100

1000

0.1 1 10 100 1000

Operation in this area is limited by RDS(on)

PW = 100ms

PW = 1ms

PW = 10ms

PW = 100ms

Ta = 25ºC Single Pulse

Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area

Pow

er

Dis

sip

ation

: P

D [

W]

Dra

in C

urr

ent

: I D

[A

]

Junction Temperature : Tj [°C] Drain - Source Voltage : VDS [V]

Fig.3 Typical Transient Thermal Resistance vs. Pulse Width

Tra

nsie

nt

Therm

al R

esis

tance :

Rth

[K

/W]

Pulse Width : PW [s]

5/13 2016.04 - Rev.A


Data SheetSCT3030AL


Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)

Fig.6 Tj = 150°C Typical Output

Characteristics(I)

Fig.7 Tj = 150°C Typical Output

Characteristics(II)

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Dra

in C

urr

ent

: I D

[A

]

Dra

in C

urr

ent

: I D

[A

]

Dra

in C

urr

ent

: I D

[A

]

Drain - Source Voltage : VDS [V]

Dra

in C

urr

ent

: I D

[A

]


0

10

20

30

40

50

60

70

0 2 4 6 8 10

Ta = 25ºC Pulsed

10V

VGS= 8V

16V

18V

14V

20V

12V

0

5

10

15

20

25

30

35

0 1 2 3 4 5

Ta = 25ºC Pulsed

VGS= 8V

10V

14V

16V

18V

20V

12V

0

10

20

30

40

50

60

70

0 2 4 6 8 10

Ta = 150ºC Pulsed

10V

VGS= 8V

18V

16V

20V

14V

12V

0

5

10

15

20

25

30

35

0 1 2 3 4 5

Ta = 150ºC Pulsed

10V

VGS= 8V

16V

14V

20V

18V

12V

6/13 2016.04 - Rev.A


Data SheetSCT3030AL


Fig.9 Typical Transfer Characteristics (II) Fig.8 Typical Transfer Characteristics (I)

Dra

in C

urr

ent

: I D

[A

]

Dra

in C

urr

ent

: I D

[A

]

Fig.10 Gate Threshold Voltage vs. Junction Temperature

Gate

Thre

shold

Voltage :

VG

S(t

h) [V

]

Junction Temperature : Tj [°C]

Fig.11 Transconductance vs. Drain Current

Tra

nsconducta

nce :

gfs [S

]

Drain Current : ID [A]

Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V]

0.1

1

10

0.1 1 10

VDS = 10V Pulsed

Ta = 150ºC Ta = 75ºC Ta = 25ºC

Ta = -25ºC

0

1

2

3

4

5

6

-50 0 50 100 150 200

VDS = 10V ID = 13.3mA

0.01

0.1

1

10

100

0 2 4 6 8 10 12 14 16 18 20

Ta= 150ºC Ta= 75ºC Ta= 25ºC

Ta= -25ºC

VDS = 10V Pulsed

0

10

20

30

40

50

60

70

0 2 4 6 8 10 12 14 16 18 20

Ta= 150ºC Ta= 75ºC Ta= 25ºC

Ta= -25ºC

VDS = 10V Pulsed

7/13 2016.04 - Rev.A


Data SheetSCT3030AL


Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage

Sta

tic D

rain

- S

ourc

e O

n-S

tate

Resis

tance

: R

DS

(on) [W

]

Gate - Source Voltage : VGS [V]

Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature

Sta

tic D

rain

- S

ourc

e O

n-S

tate

Resis

tance

: R

DS

(on) [W

]

Junction Temperature : Tj [ºC]

Fig.14 Static Drain - Source On - State Resistance vs. Drain Current

Sta

tic D

rain

- S

ourc

e O

n-S

tate

Resis

tance

: R

DS

(on) [W

]


0

0.02

0.04

0.06

0.08

0.1

0.12

6 8 10 12 14 16 18 20 22

ID = 27A

ID = 47A

Ta = 25ºC Pulsed

0

0.02

0.04

0.06

0.08

0.1

0.12

-50 0 50 100 150 200

VGS = 18V

Pulsed

ID = 47A

ID = 27A

0.01

0.1

1 10 100

VGS = 18V Pulsed

Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC

Ta = -25ºC

8/13 2016.04 - Rev.A


Data SheetSCT3030AL


0

5

10

15

20

0 100 200 300 400

Ta = 25ºC

1

10

100

1000

10000

0.1 1 10 100 1000

Ciss

Coss

Crss

Ta = 25ºC f = 1MHz VGS = 0V

0

5

10

15

20

0 10 20 30 40 50 60 70 80 90 100110

Ta = 25ºC VDD = 300V ID = 27A Pulsed

1

10

100

1000

10000

0.1 1 10 100

td(on)

td(off)

Ta = 25ºC VDD = 300V VGS = 18V

RG = 0W

Pulsed

tf

tr

Fig.15 Typical Capacitance vs. Drain - Source Voltage

Capacitance :

C [pF

]


Fig.17 Switching Characteristics

Sw

itchin

g T

ime : t [

ns]


Fig.18 Dynamic Input Characteristics

Total Gate Charge : Qg [nC]

Gate

- S

ourc

e V

oltage :

VG

S [V

] C

oss S

tore

d E

nerg

y : E

OS

S [

mJ]

Fig.16 Coss Stored Energy


9/13 2016.04 - Rev.A


Data SheetSCT3030AL


0

200

400

600

800

1000

1200

0 10 20 30 40 50 60 70 80

Ta = 25ºC VDD=300V VGS = 18V/0V

RG=0W

L=250mH

Eon

Eoff

0

50

100

150

200

250

300

350

400

100 200 300 400 500

Ta = 25ºC ID=27A VGS = 18V/0V

RG=0W

L=250mH Eon

Eoff

Fig.19 Typical Switching Loss vs. Drain - Source Voltage

Sw

itchin

g E

nerg

y : E

[mJ]


Fig.21 Typical Switching Loss

vs. External Gate Resistance

Sw

itchin

g E

nerg

y : E

[mJ]

External Gate Resistance : RG [W]

Sw

itchin

g E

nerg

y : E

[m

J]

Fig.20 Typical Switching Loss

vs. Drain Current


0

200

400

600

800

1000

1200

0 5 10 15 20 25 30

Ta = 25ºC VDD=300V ID=27A VGS = 18V/0V

L=250mH

Eon

Eoff

10/13 2016.04 - Rev.A


Data SheetSCT3030AL


Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage

Invers

e D

iode

Forw

ard

Curr

ent

: I S

[A

]

Source - Drain Voltage : VSD [V]

Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current

Revers

e R

ecovery

Tim

e : t

rr [ns]

Inverse Diode Forward Current : IS [A]

0.01

0.1

1

10

100

0 1 2 3 4 5 6 7 8

VGS = 0V Pulsed

Ta = 150ºC Ta = 75ºC Ta = 25ºC

Ta = -25ºC

10

100

1000

1 10 100

Ta = 25ºC di / dt = 1100A / us VR = 300V VGS = 0V Pulsed

11/13 2016.04 - Rev.A


Data SheetSCT3030AL

lMeasurement circuits

Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms

Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform

D.U.T.

Vsurge Irr

Eon = ID×VDS Eoff = ID×VDS

ID

VDS

Same type device as

D.U.T.

D.U.T.

ID

12/13 2016.04 - Rev.A


Data SheetSCT3030AL

lDimensions

TO-247

13/13 2016.04 - Rev.A

R1102Bwww.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.

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sct3030al : sic power mosfet · 2018-05-15 · oss c rss t a = 25ºc f = 1mhz v gs = 0v 0 5 10 15...

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