rhp030n03 : transistors

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RHP030N03 4V Drive Nch MOSFET

www.rohm.com ○c 2014 ROHM Co., Ltd. All rights reserved. 2014.08 - Rev.B

Data Sheet Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Low On-resistance. 2) 4V drive. Applications Switching

Packaging specifications Inner circuit

Package

Code

Taping

Basic ordering unit (pieces)

RHP030N03

T100

1000

Type

Absolute maximum ratings (Ta=25C)

∗1

∗2

∗1

Parameter

VVDSS

Symbol

VVGSS

AIDAIDP

AIDR

AIDRP

mWPD

°CTch

°CTstg

Limits Unit

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation

Channel temperature

Range of storage temperature

Continuous

Pulsed

Continuous

Pulsed

∗1 Pw≤10μs, Duty cycle≤1%∗2 When mounted on a 40×40×0.7mm ceramic board

Reverse drain current

30

150

−55 to +150

±20

3

10

3

10

500

W2

Thermal resistance

Parameter

°C/W

Symbol Limits Unit

62.5

°C/WRth(ch-a)Channel to ambient

250

∗ When mounted on a 40×40×0.7mm ceramic board

∗

MPT3

(1)Gate

(2)Drain

(3)Source

1.5

0.4

1.6

0.5

3.0

0.40.4

1.51.5

(3)(2)(1)

4.5

0.5

4.02.

51.

0

Abbreviated symbol : KZ

(1) Gate (2) Drain (3) Source

093246

テキストボックス

SOT-89

2/3

Data SheetRHP030N03


Electrical characteristics (Ta=25C)

Parameter Symbol

IGSS

Yfs

Min.

−Typ. Max. Unit Conditions

V(BR) DSS

IDSS

VGS (th)

RDS (on)

Ciss

Coss

Crss

td (on)

tr

td (off)

tfQg

Qgs

Qgd

∗

∗

∗

∗

∗

∗

∗

∗

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-stateresistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge∗Pulsed

− ±10 μA VGS=±20V, VDS=0V

VDD 15V

30 − − V ID= 1mA, VGS=0V

− − 1 μA VDS= 30V, VGS=0V

1.0 − 2.5 V VDS= 10V, ID= 1mA

− 90 120 ID= 3A, VGS= 10V

− 160 210 mΩmΩ

ID= 3A, VGS= 4V

2.0 − − S VDS= 10V, ID= 3A

− 160 − pF VDS= 10V

− 90

27

− pF VGS=0V

−7

− pF f=1MHz

−11

− ns

−15

− ns

−4.5

− ns

−6.5

− ns

−1.0

− nC

−1.5

− nC VGS= 10V

− − nC ID= 3A

VDD 15VID= 1.5AVGS= 10VRL=10ΩRG=10Ω

3/3

Data SheetRHP030N03


Electrical characteristics curves

DRAIN-SOURCE VOLTAGE : VDS (V)

1

10

100

1000

0.01 0.1 1 10010

CA

PA

CIT

AN

CE

: C

(pF

)

Fig.1 Typical Capacitance vs. Drain-Source Voltage

Ciss

Coss

Crss

Ta=25°Cf=1MHzVGS=0V

DRAIN CURRENT : ID (A)

0.011

10

100

1000

0.1 1 10

SW

ITC

HIN

G T

IME

: t (

ns)

Fig.2 Switching Characteristics

Ta=25°CVDD= 15VVGS= 10VRG=10ΩPulsed

tf

tr

td (off)

td (on)

GATE-SOURCE VOLTAGE : VGS (V)

0

1

0.1

0.01

10

1.50.5 1 2 2.5 3 3.5

DR

AIN

CU

RR

EN

T :

ID (

A)

Fig.3 Typical Transfer Characteristics

VDS=10VPulsed

Ta=125°C75°C25°C

−25°C

0 2 4 6 8 10 1412

GATE-SOURCE VOLTAGE : VGS (V)

0

0.1

0.2

0.3

0.4

0.5

ST

AT

IC D

RA

IN-S

OU

RC

EO

N-S

TA

TE

RE

SIS

TA

NC

E :

RD

S (

on) (

Ω)

Fig.4 Static Drain-SourceOn-State Resistance vs. Gate-Source Voltage

Ta=25°CPulsed

1.5A

ID=3.0A

0 0.2 0.4 0.6 0.8 1 1.2 1.4

SOURCE-DRAIN VOLTAGE : VSD (V)

0.001

0.1

0.01

1

10

RE

VE

RS

E D

RA

IN C

UR

RE

NT

: I D

R (

A)

Fig.5 Reverse Drain Current vs.Source-Drain Voltage ( )

VGS=0VPulsed

Ta= −25°CTa=25°CTa=75°C

Ta=125°C

0 0.2 0.4 0.6 0.8 1 1.2

SOURCE-DRAIN VOLTAGE : VSD (V)

0.001

0.1

0.01

1

10

RE

VE

RS

E D

RA

IN C

UR

RE

NT

: I D

R (

A)

Fig.6 Reverse Drain Current vs.Source-Drain Voltage ( )

VGS=10V

0V

Ta=25°CPulsed


ST

AT

IC D

RA

IN-S

OU

RC

EO

N-S

TA

TE

RE

SIS

TA

NC

E :

RD

S (

on) (

Ω)

Fig.8 Static Drain-SourceOn-State Resistancevs. Drain Current ( ΙΙ )

0.01 0.1 1 100.01

0.1

1

Ta= −25°CTa=25°CTa=75°C

Ta=125°C

VGS=4VPulsed


ST

AT

IC D

RA

IN-S

OU

RC

EO

N-S

TA

TE

RE

SIS

TA

NC

E :

RD

S (

on) (

Ω)

Fig.7 Static Drain-SourceOn-State Resistancevs. Drain Current ( Ι )

0.01 0.1 1 100.01

0.1

1

Ta= −25°CTa=25°CTa=75°CTa=125°C

VGS=10VPulsed

CHANNEL TEMPERATURE : Tch (°C)

GA

TE T

HR

ES

HO

LD V

OLT

AG

E :

VG

S (

th) (

V)

Fig.9 Gate Threshold Voltage vs. Channel Temperature

-50 -25 0 25 50 75 100 125 1500

0.5

1

1.5

2

2.5VSD=10VID=1mAPulsed

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rhp030n03 : transistors

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