rfsoi foundry technology supporting rapid new product development · 2019-11-27 · rfsoi foundry...
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RFSOI Foundry Technology Supporting Rapid New Product Development
Paul Hurwitz
RFSOI Industry Consortium September 17, 2019 Shanghai
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TowerJazz Overview
TowerJazz manufactures integrated circuits, offering a customizable
process technologies:
• RFSOI and RFCMOS
• SiGe BiCMOS
• Silicon Photonics
• CMOS Image Sensor
• Integrated Power management (BCD and 700V)
• MEMS
• Mixed-signal/CMOS
Additional offering:
• World class design enablement (DE) platform
• Transfer Optimization and development Process Services (**TOPS)
** To IDMs and Fabless companies that need to expand
capacity
TowerJazz Manufacturing Facilities: Two in Israel (150mm & 200mm)
Two in the US (200mm)
Three in Japan (two 200mm and one 300mm) through
TowerJazz Panasonic Semiconductor Co (TPSCo).
We specialize in customized analog
solutions for differentiated products
Rooted in proven technologies
Derived from innovation within silicon
We pursue excellence in all aspects of
business
1st-3rd Generation 200mm RF-SOI
Latest 300mm RF-SOI
Latest 200mm RF-SOI
Flexible Worldwide RF-SOI Manufacturing
• 6″, 150mm
Migdal HaEmek, Israel Migdal HaEmek, Israel
• 8″, 200mm • 8″, 200mm
Newport Beach, USA
• 8" (200mm)
San Antonio, USA
Tonami, Japan
• 8″, 200mm
Arai, Japan
• 8″, 200mm
Uozu, Japan
• 12″, 300mm
TowerJazz RF-SOI for 4G/LTE + Sub-6GHz 5G NR
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Feature Enables FEM
Performance
Low Ron × Coff Insertion Loss, Isolation →
Battery Life
High Power
Handling,
High Digital
Density
FEM board size reduction
→ Enables more bands +
antennas
Linearity Carrier Aggregation →
Higher Data Rate
Low Noise System NF → Longer
Range
Advanced
Passives
Integrated matching →
Small form factor
Antenna tuning → Battery
Life
Design
Enablement
1st pass success → Fast
time to market
Carrier Aggregation, 4 X 4 MIMO and new 5G bands drive the need
for low-loss, high power, high linearity switching enabled by RF-SOI.
New in 2019: Next-Gen 200mm and 300mm RF-SOI
200mm RF-SOI: Best power handling (tuners, infrastructure…)
300mm RF-SOI: Best SW+LNA integration, higher digital density.
AC Breakdown Voltage
Ro
n X
Co
ff
200mm RF-SOI
Gen4
Gen4+
0.5V
AC Breakdown Voltage
Ro
n X
Co
ff
Gen1
Lg1
Lg2 Lg3
Gen2
Gen2 OD
300mm RF-SOI
15fS
RF Switch Die Size Reduction
A
n
t
e
n
n
a
interface logic
SW branch
SW branch
SW branch
SW branch
SW branch
SW branch
SW branch
SW branch
charge pump, analog
A
n
t
e
n
n
a
SW branch
interface
logic charge pump, analog
SW branch
SW branch
SW branch
SW branch
SW branch
SW branch
SW branch
1ST GENERATION SOI RFSW 4TH GENERATION SOI RFSW
• RFSW die size reduction enabled
by Ron X Coff reduction, Pmax
and digital density increase.
Antenna Tuning and Switch Power Handling
Even small parasitic losses across switch branch results in significant voltage imbalance: Devices near the antenna can easily see > 2V higher peak Vds than others.
Simulated with TowerJazz PDK
Improved Pmax Modeling
New SOI model adopted for latest technology generation.
Physics-based modeling of RF breakdown for accuracy across Lf, Wf, Rb, Nstack, etc.
Lg1
Lg2
Lg3
• Easy to use - No need to draw any special marking layers • Multiple coupling paths are self-consistently modeled
A. Lateral coupling between metal layers B. Coupling via handle-wafer C. Coupling to reference GND via Package dielectric
(TJ proprietary technique) D. Coupling to package GND - Option to add Bump/Cu pillar,
PCB Via, and PCB GND plane.
Customization Form
Silicon Validated
New Flip-Chip Substrate Modeling Capability
* Ron-Coff including metal parasitics
Deep sub-µm CMOS integration, dual thick Cu, and excellent RFSW make 300mm gen2 a great platform for DRx / DTx, WLAN, and K, Ka-band applications.
Parameter Trad. 130nm
NFET
Gen2 LNA
NFET
Ft 1X 1.75X
NFmin @5mA X dB X-0.06 dB
Gm 1X 1.4X
LNA + Switch Integration in 300mm RF-SOI
Gen1 Gen2
CMOS 1.2 / 2.5V 1.2 / 2.5V
Ron-Coff (fs)* 1X 0.9X
Resistor
(ohm/sq) LV, HV LV, HV
MIM Cap Yes Yes
Top Metal Single or
dual thick Cu
Single or dual
thick Cu
FB effects 1X 0.5X
Wafer Size 300mm 300mm
PDK Available Yes Yes
LNA Device Modeling, Gain and Noise Circles
Includes pad parasitics Excellent noise model fits to and extensive measured dataset
LNA + RFSW Integration Demonstrators
• Close Si-model match in 1st pass designs
• TPS65 enables high-performance DRx LNA integrated with leading-edge RFSW: • > 20 dB gain • < 0.9 dB NF • < 6 mW PDC
0
1
2
3
4
5
27.4 27.6 27.8 28 28.2 28.4 28.6
NF
[dB
]
freq (GHz)
Meas
Sim
5 GHz
28 GHz
In-House Multi-Project Wafer Support + eBizz
Flexible in-house MPW program (shared or customer-specific) that enables rapid prototyping of even the most complex tape-ins.
MLM capability in 300mm RFSOI.
Powerful + easy-to-use eBizz system for tape-in, documentation access, help ticket system, knowledge base, Cpk trends, etc.
Experienced local support from China sales office
Access to lead technologists to align our roadmap with customers’ long-term objectives.
Requirements for Rapid TTM in RFSOI
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Challenge TowerJazz Solution
Realize market leading performance Gen4 RFSOI technologies optimized for high power
SW and SW+LNA integration
Minimize # of design spins Accurate RF models (S/N/F, x-sigma) able to predict
key SW FOM, fast PeX and substrate extraction.
Leverage TJ design demonstrators.
Streamline tape-in and OKTMM process Flexible in-house MPW system managed by
experienced staff.
Minimize time in fab Streamlined flows with good engineering cycle times.
Maximize IP reuse Preserve key logic + analog specs across multiple
RFSW generations.
Quickly close technology-related questions eBizz portal and worldwide design support staff.
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