rf power field--effect transistor - nxp semiconductors · 2016. 11. 23. · ar c hive inf o rmati o...

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MRF374A

1RF Device DataFreescale Semiconductor

RF Power Field--Effect TransistorN--Channel Enhancement--Mode Lateral MOSFETDesigned for broadband commercial and industrial applications with

frequencies from 470 to 860 MHz. The high gain and broadband performance ofthis device make it ideal for large--signal, common source amplifier applicationsin 28/32 volt transmitter equipment.

• Typical Two--Tone Performance @ 860 MHz, 32 Volts, Narrowband FixtureOutput Power 130 Watts PEPPower Gain 17.3 dBEfficiency 41%IMD --32.5 dBc

• Capable of Handling 10:1 VSWR @ 32 Vdc, 857 MHz, 130 Watts CWOutput Power

Features• Integrated ESD Protection• Excellent Thermal Stability• Characterized with Differential Large--Signal Impedance Parameters• RoHS Compliant

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain--Source Voltage VDSS --0.5, +70 Vdc

Gate--Source Voltage VGS --0.5, +15 Vdc

Total Device Dissipation @ TC = 25°CDerate above 25°C

PD 3021.72

WW/°C

Storage Temperature Range Tstg --65 to +150 °C

Case Operating Temperature TC 150 °C

Operating Junction Temperature TJ 200 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value Unit

Thermal Resistance, Junction to Case RθJC 0.58 °C/W

Table 3. ESD Protection Characteristics

Test Conditions Class

Human Body Model 1 (Minimum)

Machine Model M2 (Minimum)

Document Number: MRF374ARev. 5, 5/2006

Freescale SemiconductorTechnical Data

470--860 MHz, 130 W, 32 VLATERAL N--CHANNEL

BROADBANDRF POWER MOSFET

CASE 375F--04, STYLE 1NI--650

MRF374A

© Freescale Semiconductor, Inc., 2006, 2010. All rights reserved.

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2RF Device Data

Freescale Semiconductor

MRF374A

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics (1)

Drain--Source Breakdown Voltage(VGS = 0 Vdc, ID =10 μA)

V(BR)DSS 70 Vdc

Zero Gate Voltage Drain Current(VDS = 32 Vdc, VGS = 0 Vdc)

IDSS 1 μAdc

Gate--Source Leakage Current(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS 1 μAdc

On Characteristics

Gate Threshold Voltage (1)

(VDS = 10 V, ID = 200 μA)VGS(th) 2 2.9 4 Vdc

Gate Quiescent Voltage (2)

(VDS = 32 V, ID = 100 mA)VGS(Q) 2.5 3.3 4.5 Vdc

Drain--Source On--Voltage (1)

(VGS = 10 V, ID = 3 A)VDS(on) 0.41 0.45 Vdc

Dynamic Characteristics (1)

Input Capacitance(VDS = 32 V, VGS = 0 V, f = 1 MHz)

Ciss 97.3 pF

Output Capacitance(VDS = 32 V, VGS = 0 V, f = 1 MHz)

Coss 49 pF

Reverse Transfer Capacitance(VDS = 32 V, VGS = 0 V, f = 1 MHz)

Crss 1.91 pF

Functional Characteristics, Narrowband Operation (2) (In Freescale MRF374A Narrowband Circuit, 50 ohm system)

Common Source Power Gain(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,f1 = 857 MHz, f2 = 863 MHz)

Gps 16 17.3 dB

Drain Efficiency(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,f1 = 857 MHz, f2 = 863 MHz)

η 36 41.2 %

Intermodulation Distortion(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,f1 = 857 MHz, f2 = 863 MHz)

IMD --32.5 --28 dB

1. Each side of device measured separately.2. Measurement made with device in push--pull configuration.

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MRF374A


Figure 1. MRF374A Narrowband Test Circuit Component Layout

PCB Substrate (30 mil thick)

Motorola Vertical 860 MHz BalunRogers RO3010 (50 mil thick)

55 mil slot cutout to accept Balun

Input(50 ohm microstrip)

Output 2(12.5 ohm microstrip)

Ground

Vertical Balun Mounting Detail

Note:Trim Balun PCB so that a 35 mil tabfits into the main PCB slot resultingin Balun solder pads being level withthe PCB substrate solder pads whenfully inserted.

Output 1(12.5 ohm microstrip)

MRF374 Rev 3a

C1

C2 C3

R3A

R2

L4

L3A L2A

C4A

L3B

R3B

C4BC5 C6

C7A

R1A

R1B

L2B

C7B

C13A

C13B

C10

C9A

C9B

R4AL1A

C14A

R4BL1B

C14B

C11

C12A

C12B

RF INPUTRF OUTPUT

VGS

VGS

VDD

VDD

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the FreescaleSemiconductor signature/logo. PCBs may have either Motorola or Freescale markings during thetransition period. These changes will have no impact on form, fit or function of the current product.

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4RF Device Data


MRF374A

Table 5. MRF374A Narrowband Test Circuit Component Layout Designations and Values

Designation Description

C1 0.8 pF Chip Capacitor, ATC


C3 0.5 -- 5.0 pF Variable Capacitor, Johanson Gigatrim

C4A, B, C12A, B 47 pF Chip Capacitors, ATC


C6 10 pF Chip Capacitor, ATC

C7A, B, C14A, B 100,000 pF Chip Capacitors, ATC

C9A, B 15 pF Chip Capacitors, ATC



C13A, B 2.2 mF, 100 V Chip Capacitors, Vishay #VJ3640Y225KXBAT

L1A, B 5.0 nH, Coilcraft #A02T

L2A, B 8.0 nH, Coilcraft #A03T

L3A, B 130.0 nH, Coilcraft #132--11SMJ

L4 8.8 nH, Coilcraft #1606--8

R1A, B 51 Ω, 1/4 W Chip Resistors, Vishay Dale (1210)

R2 10 Ω, 1/2 W Chip Resistor, Vishay Dale (2010)

R3A, B 3.3 kΩ, 1/8 W Chip Resistors, Vishay Dale (1206)

R4A, B 180 Ω, 1/4 W Chip Resistors, Vishay Dale (1210)

PCB MRF374 Printed Circuit Board Rev 03, Rogers RO4350,Height 30 mils, εr = 3.48

Balun B1A, B Vertical 860 MHz Narrowband Balun, Printed Circuit Board Rev 01,Rogers RO3010, Height 50 mils, εr = 10.2

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MRF374A


TYPICAL CHARACTERISTICS

90015

18

400

VDD = 32 Vdc

Pout = 100 W (PEP)IDQ = 750 mAnFrequency = 6 MHz

Gps,POWER

GAIN(dB)

17.5

17

16.5

16

15.5

800700600500

28 Vdc

Figure 2. Gain versus Frequencyin Broadband Circuit

Figure 3. Intermodulation Distortion versusFrequency in Broadband Circuit

Figure 4. Drain Efficiency versus Frequencyin Broadband Circuit

f, FREQUENCY (MHz) f, FREQUENCY (MHz)

f, FREQUENCY (MHz)

Figure 5. Performance in Broadband Circuit

Figure 6. Capacitance versus Voltage Figure 7. COFDM Intermodulation, Gain and Efficiencyversus Output Power in Broadband Circuit

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

900--50

--15

400

INTERMODULATIONDISTORTION(dBc)

IMD,

VDD = 28 Vdc

32 Vdc

--20

--25

--30

--35

--40

--45

800700600500

90020

45

400

VDD = 28 Vdc

,DRAINEFFICIENCY(%)

η

32 Vdc

800700600500

40

35

30

25

9000

20

40020

40

IRL

Gps

η

INPUTRETURNLOSS

(dB)

IRL,

Gps,POWER

GAIN(dB)

,DRAINEFFICIENCY(%)

η

D

15 35

10 30

5 25

800700600500

D

f, FREQUENCY (MHz)

600

200

00

20

Crss

Coss

Capacitance(pF)

Coss

Ciss

150 15

100 10

50 5

5040302010

,Ciss,

Capacitance(pF)

Crss,

1000

40

0.1--60

--20

Gps

η

IMR

INTERMODULATION(dBc)

IMR,

35 --25

30 --30

25 --35

20 --40

15 --45

10 --50

5 --55

101

Pout, OUTPUT POWER (WATTS) AVG.

,DRAINEFFICIENCY(%),

ηGps,POWER

GAIN(dB)



VDD = 32 VdcPout = 100 W (PEP)IDQ = 750 mAnFrequency = 6 MHz

VDD = 32 VdcIDQ = 1.1 Af = 860 MHz2 K Mode COFDM64 QAM10.5 Peak/Avg. Ratio

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6RF Device Data


MRF374A


Figure 8. 8--VSB Intermodulation, Gain and Efficiencyversus Output Power in Broadband Circuit

Figure 9. Power Gain versus Peak Output Powerin Narrowband Circuit

Figure 10. Intermodulation Distortion versusPeak Output Power in Narrowband Circuit

Figure 11. Drain Efficiency versus Peak Output Powerin Narrowband Circuit

Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP

Pout, OUTPUT POWER (WATTS) PEP

1000

40

0.1--60

--20

Gps

η

IMR

VDD = 32 VdcIDQ = 1.1 Af = 860 MHz

,DRAINEFFICIENCY(%),

ηGps,POWER

GAIN(dB)

35 --25

30 --30

25 --35

20 --40

15 --45

10 --50

5 --55

10113

19

IDQ = 1.0 A

800 mA

Gps,POWER

GAIN(dB)

600 mA

400 mA

200 mA

18

17

16

15

14

100--55

--20

1

IDQ = 200 mA

400 mA


IMD,

--25

--30

--35

--40

--45

--50

10

600 mA

800 mA1.0 A

1000

50

1

VDD = 32 VdcIDQ = 800 mAf = 857 MHz

40

30

20

10

10

INTERMODULATION(dBc)

IMR,

,DRAINEFFICIENCY(%)

ηD

1001 10

VDD = 32 Vdcf = 857 MHznFrequency = 6 MHz

nFrequency = 6 MHz

VDD = 32 Vdcf = 857 MHz

nFrequency = 6 MHz

Pout, OUTPUT POWER (WATTS) AVG.

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MRF374A



Figure 12. Power Gain versus Peak Output Powerin Broadband Circuit

Figure 13. Power Gain versus Peak Output Powerin Broadband Circuit


15

18

470 MHz

VDD = 28 VdcIDQ = 750 mATone Spacing = 6 MHz

Gps,POWER

GAIN(dB)

560 MHz

760 MHz

660 MHz

860 MHz

17.5

17

16.5

16

15.5

15

18

470 MHz


Gps,POWER

GAIN(dB)

560 MHz

760 MHz

660 MHz860 MHz

17.5

17

16.5

16

15.5

860 MHz

760 MHz

Figure 14. Drain Efficiency versus Peak Output Powerin Broadband Circuit

Figure 15. Drain Efficiency versus Peak Output Powerin Broadband Circuit

Figure 16. Intermodulation Distortion versusPeak Output Power in Broadband Circuit

Figure 17. Intermodulation Distortion versusPeak Output Power in Broadband Circuit


Pout, OUTPUT POWER (WATTS) PEPPout, OUTPUT POWER (WATTS) PEP

45

,DRAINEFFICIENCY(%)

η

35

25

15

5

860 MHzVDD = 28 VdcIDQ = 750 mATone Spacing = 6 MHz

560 MHz

470 MHz

0

860 MHz

VDD = 32 VdcIDQ = 750 mATone Spacing = 6 MHz,DRAINEFFICIENCY(%)

η

40

30

20

10

--50

--25


IMD,

--30

--35

--40

--45


470 MHz

660 MHz560 MHz


IMD,

--50

--25

--30

--35

--40

--45

860 MHz


760 MHz

470 MHz

660 MHz560 MHz

VDD = 28 Vdc VDD = 32 Vdc

1001 10 1001 10

1001 10 1001 10

1001 10 1001 10

660 MHz

470 MHz660 MHz560 MHz

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8RF Device Data


MRF374A

Figure 18. Series Equivalent Source and Load Impedance

fMHz

ZsourceΩ

ZloadΩ

845

860

875

3.33 -- j2.42

2.73 -- j3.10

3.03 -- j2.39

4.56 -- j2.86

4.22 -- j3.16

3.87 -- j3.52

VDD = 32 V, IDQ = 400 mA, Pout = 130 W PEP

Zo = 4Ω

Zsource

Zload

f = 845 MHz

f = 875 MHz

f = 845 MHz

f = 875 MHz

Zsource = Test circuit impedance as measured fromgate to gate, balanced configuration.

Zload = Test circuit impedance as measuredfrom drain to drain, balanced configuration.

Zsource Z load

InputMatchingNetwork

DeviceUnderTest

OutputMatchingNetwork

--

-- +

+

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MRF374A


NOTES

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10RF Device Data


MRF374A

NOTES

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MRF374A


PACKAGE DIMENSIONS

NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1994.2. CONTROLLING DIMENSION: INCH.3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY

FROM PACKAGE BODY.

D

F

EH

2

3

1

R (LID)

Q2X

C

SEATINGPLANE

CASE 375F--04ISSUE E

K4 PL

STYLE 1:PIN 1. DRAIN

2. DRAIN3. GATE4. GATE5. SOURCE

DIM MIN MAX MIN MAXMILLIMETERSINCHES

A 1.135 1.145 28.80 29.10B 0.225 0.235 5.72 5.97C 0.135 0.178 3.43 4.52D 0.210 0.220 5.33 5.59E 0.055 0.065 1.40 1.65F 0.004 0.006 0.11 0.15GH 0.077 0.087 1.96 2.21KL

N 0.638 0.650 16.20 16.50QR 0.227 0.233 5.77 5.92

4

0.900 BSC

0.220 0.2500.260 BSC

22.86 BSC

5.59 6.356.60 BSC

G

BMbbb MLMAMbbb B MT

B

B(FLANGE)

M

N

T

MAMbbb B MT

(INSULATOR)MAMccc B MT

(LID)

A(FLANGE)

A M

S (INSULATOR)

MAMbbb B MT

MAMccc B MT

5

A

M 0.643 0.657 16.33 16.69

S 0.225 0.235 5.715 5.97

.125 .135 3.175 3.43

bbb 0.010 BSC 0.254 BSCccc 0.015 BSC 0.381 BSC

T

NI--650

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12RF Device Data


MRF374A

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Document Number: MRF374ARev. 5, 5/2006

rf power field--effect transistor - nxp semiconductors · 2016. 11. 23. · ar c hive inf o rmati o...

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