review of recently achieved measurements on crystals
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Review of recently achieved measurements on crystals. UA9 Collaboration meeting. Andrea Mazzolari. University of Ferrara and INFN - Italy. CERN, 10 Nov 2009. Outlook. Crystal fabrication Crystal characterization Torsion removal H8 Crystals for SPS H8 New materials and technologies - PowerPoint PPT PresentationTRANSCRIPT
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Review of recently achieved measurements on crystals
Andrea Mazzolari
CERN, 10 Nov 2009
University of Ferrara and INFN - Italy
UA9 Collaboration meeting
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Outlook
• Crystal fabrication• Crystal characterization• Torsion removal• H8 Crystals for SPS• H8 New materials and technologies• H8 Crystals for H4
• H4 axial channeling• H4 MVR in a single crystal
• Conclusions
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Anisotropic etching I
Anistropic etching is a feasible way to realize sub-surface damage free crystals entirely by wet chemical methods
(100) (110) (111)
7.1 m/h 10.7 m/h Negligible
Etch rate on different silicon planes for KOH 20% at 40 °C
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Photolithography
a) Starting material: (110) silicon wafer, off-axis: 120 μrad
b) LPCVD deposition of silicon nitride thin layer
c) Silicon nitride patterning
d) Etching of Si in KOH solution, silicon nitride acts as masking layer
e) Silicon strips release
f) Removal of silicon nitride
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Fabrication of multistrips
Fabrication of either a multistrip or a batch of strips is possible through wet chemical methods
JPD 41, 24 (2008)
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Characterization
Lateral surface (AFM)
Sub-nm roughness was achieved
Entry surface (HRTEM)
High-quality surfaces achieved via ACE
Sub-nm roughness was achieved
<111>
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On-beam characterization
R = 2.4 m R = 4.5 m
R = 8.6 m
R = 38 m
ST9 crystal was characterized with 400 GeV protons in the external line H8 and installed in SPS ring
Planar channeling efficiency is very high
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On-beam characterization
Single-pass efficiency of planar channeling exceeds 75% and 85% with quasi-parallel particles
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On-beam characterization
Dependence of VR defection angle and its spread vs. crystal curvature
Comparison with theoretical model
PRL 101, 234801 (2008) V. Maisheev Phys. Rev. ST Accel. Beams 10 (2007) 084701
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Torsion removal
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Torsion removal II
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Torsion removal III
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H8 – ST 16 for SPS•Thickness: 2 mm•Ch planes: (110), mis-cut: -1500±20 urad•Bending angle: 150 urad,•Ch efficency: about 80%•Torsion: about 1urad/mm
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H8 – ST18 for SPS•Thickness: 2 mm•Ch planes: (110), mis-cut: -200±20 urad•Bending angle: 176 urad,•Ch efficency: about 80%•Torsion: about 0.6urad/mm
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H8 – QM1 for SPS•Thickness: 0.93 mm•Ch planes: (111), miscut: <300 urad•Bending angle: 130 urad•Ch efficency: to be analyzed•Torsion: to be analyzed
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H8 – QM24 for SPS•Thickness: 4.0 mm•Ch planes: (111), miscut: 90 urad•Bending angle: 120 urad•Ch efficency: to be analyzed•Torsion: 5.3 urad/mm
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-150 -100 -50 0 50 100 1501
10
100
1000
10000
Inte
nsi
ty (
a.u
)
Tilt (urad)
FWHM = 110 urad
H8 – Si-Ge crystal•Graded Si-Ge crystal•Ch planes: (111)
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H8 – Si-Ge crystal•Thickness: 4mm along the beam•Ch planes: (111)•Bending angle: 176 urad
•Ch efficency: about 45%•θVR=12.8 urad•Torsion: torsion free
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H8 – QM-Ge crystal•Thickness: 0.5mm•Ch planes: (111)•Bending angle: 200 urad•Ch efficency: to be analyzed•Torsion: to be analyzed
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H8 – Lithium Niobate•Thickness: 1mm•Ch planes: (01-10)•Bending angle: 195 urad
•Ch efficency: about 3%•θVR=13 urad•VR efficency: about 90%
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H8 – Multistrips•Thickness: 2 mm, 4 strips•Ch planes: (111)•Ch axis: <110>
•Bending angle: about 300 urad•θVR= about 44 urad•θVROC= about 150 urad
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H8 – Grooved crystal•Thickness: 1.5 mm, 5 strips•Ch planes: (111)
•θVR= about 40 urad•VR efficicency: to be analyzed
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H8 – Preparation of stripfor MVR on H4 I
•Thickness: 4 mm•Ch planes: (110)•Bending angle: 738 urad•Ch efficency: about 27%•Torsion: about 2.6urad/mm
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H8 – Preparation of strip for MVR on H4 II
•Thickness: 2 mm•Ch planes: (110)•Bending angle: 670 urad,•Ch efficency: about 31%•Torsion: about 4.3urad/mm
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H8 – Preparation of strip for axial ch on H4 I
•Thickness: 8 mm•Ch planes: (110)•Bending angle: 178 urad•Ch efficency: about 55%•Torsion: about 4.6urad/mm
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H8 – Preparation of strip for axial ch on H4 II
•Thickness: 2 mm along the beam•Ch planes: (110)•Bending angle: 105 urad,•Ch efficency: about 65%•Torsion: about 1.8urad/mm
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H4 – Axial channeling I•Thickness: 2mm•Ch planes: (110), ch axis: <111>•Bending angle: 105 urad
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H4 – Skew planes
Main plane
Skew plane
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H4 – MVR in a single crystal IUnder proper axial alignement VR from main and skew planes collapse in MVR in a single crystal
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H4 – MVR in a single crystal II•Thickness: 2mm•Ch planes: (110), ch axis: <111>•Bending angle: 738 urad•MVR deflection angle: about 60 urad
First observation of MVR in a single crystal with negative particles
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Conclusions•Established a reproducible method to remove torsion in strip crystals
•Two strip crystals fully characterized and ready for installation in SPS
•Started researches on channeling and VR with new materials and technologies
•First observation of MVR in a single crystal with negative particles
•Succeffully observed planar and axial deflection of negative particles at large bending angles