research activities in ourresearch activities in our …ingaasp semiconductor optical amp. 200-gb/s,...

Research activities in ourResearch activities in our

Ultrafast Optical Logic Laboratory2007-2008

Yoshiyasu Ueno, Professorhttp://www.ultrafast.ee.uec.ac.jp/http //www.ultrafast.ee.uec.ac.jp/

phone: +81-42-443-5807email: [email protected]

Department of Electronic Engineering,

University of Electro-Communications (UEC)yChofu city, Tokyo, Japan

Thi bi l t b d l d d f

1Ultrafast Optical Logic Lab., UECUltrafast Optical Logic Lab., UEC

This bi-annual report can be downloaded fromhttp://www.ultrafast.ee.uec.ac.jp/annual.pdf

On-going Research Project lineupOn-going Projects that we want to run in our lab.

(depending upon the quantity and quality of grad students every two-three years!!)

(1) 200 Gb/s DISC gate experimenthigh speed limit, low-energy-dissipation limitquantum electronical optical acceleration mechanismquantum-electronical, optical-acceleration mechanism

(2) New scheme of mode-locking pulse generationsub-picosecond high-quality pulse generation,p g q y p g ,precise frequency-comb generation,wide-gap materials

(3) M t i l li h t i ti(3) Materials nonlinear-response characterizationdilute quantum-dot versus bulk semiconductors, taking into account the Krammers-Kronig relation,size reduction with pc/qd waveguides

(4) Newly exploring the 200-to-500 GHz speed regionoptical-spectrum-synthesis design and characterization which we have proposed (Nakamoto et al., OE 2007)attention to: effective efficiency i e dc energy consumption


attention to: effective efficiency, i.e., dc energy consumption

COE-research: DISC-type all-optical semiconductor gate200-Gb/s data-driven optically gated waveform200 Gb/s, data driven, optically gated waveform

SMZ-DISC-type gate structure (1998)SMZ DISC方式SMZ DISC方式SMZ DISC方式SMZ DISC方式

Sakaguchi, et al., submitted to Opt. Comm., Elsevier.UEC---Tech. Univ. Denmark collaboration, 2004-2005.

λ=λ2

MZI, Δt

SOA

SMZ-DISC方式

MZI, Δt

SOA

SMZ-DISC方式λ=λ1

λ=λ2

MZI, Δt

SOA

SMZ-DISC方式

MZI, Δt

SOA

SMZ-DISC方式λ=λ1

λ=λ2

Custom-designedInGaAsP semiconductor optical amp.

200-Gb/s, 5,000-bit-long, gated waveform, May 2008,measured with a home-made, precisely synchronized 40-MHz monitoring system.

Distance in air z (mm)

Spectra before and after the DISC gate.Wavelength (nm)

1580 1560 1540 1520

1.5

u.)

Input data, 1560 nm

1.5-20 -10 0 +10 +20

u.)

Distance in air, z (mm)

Gated waveform, 1540 nm1 0 0 1 0 0 0 1 0 1 1 1 …

1 0 0 1 0 0 0 1 0 1 1 1 …

0

+10

nten

sity

(dB

)

1580 1560 1540 1520

Input Output0.5

1.0

Inte

nsity

(a.

0.5

1.0

Inte

nsity

(a. 1 0 0 1 0 0 0 1 0 1 1 1 …

190 192 194 196-20

-10

Rel

ativ

e in

-75 -50 -25 0 +25 +50 +750

Time (ps)-75 -50 -25 0 +25 +50 +75

0

Time (ps)

I

3Optical frequency (THz)

Ultrafast Optical Logic Lab., UECUltrafast Optical Logic Lab., UEC

SOA’s dc-electric-power consumption= 0.59 Watt= 3.0 pJ/bit.Time (ps)

COE-research: DISC-loop-type mode-locked pulse sourceSingle mode 2 ps 10 GHz pulse and comb generationSingle-mode, 2-ps, 10-GHz pulse and comb generation

2-ps 10-GHz pulse’s optical waveform and comb spectrum

0 1546154815501552

m)

Wavelength (nm)

2-ps, 10-GHz pulse s optical waveform, and comb spectrum

1.5-20 0 +20

Distance in air, z (mm)

-40

-20

nsity

(dB

m/n

m

0.5

1.0

Inte

nsity

(a. u

.)

commercially-available InGaAsP SOA module.SOA’s dc-electric-power consumption

2 ps550 GHz

193.0 193.5 194.0

-60

Optical frequency (THz)

Inte

n

single-longitudinal mode

-100 -50 0 +50 +1000

Time (ps)

= 0.56 Watt

multi-mode(previous result)40

-20

0

y (d

Bm

)

single longitudinal mode

9 90 9 95 10 00 10 05 10 10-80

-60

-40

Inte

nsity

high-Finesse solid etalon(FSR= 10 GHz, Δf3dB= 180 MHz,J A i ti Electronics I d t i Ltd )


9.90 9.95 10.00 10.05 10.10OE-converted signal frequency (GHz)

Japan Aviation Electronics Industries, Ltd.)

COE-research: DISC-loop-type mode-locked pulse source2 40 GH l d b ti 2005 20062-ps, 40-GHz pulse and comb generation, 2005-2006

R. Suzuki, et al., CLEO, Long Beach, USA, May 2006.

1 0a. u

.) 25ps = 41GHz1 0a.

u.) 25ps = 41GHz

-20

0

Bm

) 330pm = 41GHz-20

0

Bm

) 330pm = 41GHz

Auto-correlation trace Optical-frequency-comb spectrum

0.5

1.0

Inte

nsity

(

13.5 dB0.5

1.0

Inte

nsity

(

13.5 dB-60

-40

nten

sity

(dB

-60

-40

nten

sity

(dB

Original scheme from,Y. Ueno, et al., Appl. Phys. Lett. Oct. 2001 -37.5 -25 -12.5 0 +12.5 +25 +37.50.0

Delay (ps)

SHG

-37.5 -25 -12.5 0 +12.5 +25 +37.50.0

Delay (ps)

SHG

1546 1548 1550 1552 1554

-80

Wavelength (nm)

In

1546 1548 1550 1552 1554

-80

Wavelength (nm)

In

d f d Δ Δfmeasured t-f product, Δt⋅Δf= 0.53(1.2 times that of a Gaussian pulse)

020al

-50 -25 0 25 500

10

20

Delay (ps)Aut

o-co

rrel

atio

n Si

gnal

In

tens

ity (

mV

)

1553 1554 1555 1556 1557

-80

-60

-40

-20

0

Wavelength (nm)

Inte

nsity

(dB

m)

(3) Gloop> 0dB

]

Proof of principle (1), threshold behavior Proof of principle (2), linearly controlled pulse widths

))

-60

-40

-20

0

ensi

ty (d

Bm

)

10

20

rela

tion

Sign

al

sity

( m

V )

1553 1554 1555 1556 1557

-80

-60

-40

-20

Wavelength (nm)

Inte

nsity

(dB

m)

-50 -25 0 25 500

10

20

Delay (ps)Aut

o-co

rrel

atio

n Si

gna

Inte

nsity

( m

V )

(2) Gloop≥ 0dBnear threshold

(1) G < 0dB

-20

-10

0

tical

pow

er, P

out [

dBm

(2)

(3)

(1) 7.2dB 2

3

4

5

6

ut p

ulse

wid

th, τ

[ps]

ed w

idth

of p

ulse

, τ(p

s)

2

3

4

5

6

ut p

ulse

wid

th, τ

[ps]

ed w

idth

of p

ulse

, τ(p

s)

solid curve: 10 GHz


1553 1554 1555 1556 1557

-80

Wavelength (nm)

Inte

-50 -25 0 25 500

Delay (ps)Aut

o-co

rrIn

tens (1) Gloop< 0dB

-10 0 +10 +20

-30

Pulse loop gain, G loop [dB]

Out

put o

pt

+0.7 0 1 2 3 4 5 60

1

MZI's delay time, Δt [ps]

Out

pu

Delay time in DISC, Δt (ps)

Mea

sure

0 1 2 3 4 5 60

1

MZI's delay time, Δt [ps]

Out

pu

Delay time in DISC, Δt (ps)

Mea

sure solid curve: 10 GHz

dashed curve: 40 GHz

COE-research: Ultrafast optical phase/intensity-responsecharacterization research of PC/QD waveguidescharacterization research of PC/QD waveguides

Collaboration project between U. Tsukuba-AIST-UEC-NEC, 2005-2007.

home-made pump-and-probe AOM-heterodyne system

(by Salleras and Honma)

home made pump and probe, AOM heterodyne, system,combined with commercial Green -- Ti:S -- Parametric Osc.System (Spectra Phys.) in our lab.

air-bridged GaAs-photonic-crystal (PC)/ InAs quantum-dot (QD) integrated waveguides,

Air-bridge (2μm)


fabricated by U. Tsukuba and AIST.ref.: K. Asakawa, et al., New J. Phys. 8 (2006) 208.

COE research, for making-up Future Vision:

dc electric energy consumption model (DISC t )dc-electric-energy consumption model (DISC gate)J. Sakaguchi et al., Opt. Express, Oct. 2007.Y Ueno et al IEICE PN society mtg Dec 2007 TokyoY. Ueno et al., IEICE PN-society mtg, Dec. 2007, Tokyo.UEC--KDDI collaboration project, 2005-2006.

300

1000

3000

mW

)Φ

=0.3

π B#1 1100 μm B#2 700 μm B#3 500 μm

A#1 1000 μm A#2 700 μm

B#3 500 μmcalculated measured

3000

30000 ηT=1, τC=100 ps, dg/dn=20 × 10-17 cm2

τC= 50 ps τC=200 ps, ηT=0.5 dg/dn= 40 × 10-17

dg/dn= 10 × 10-17

I OP (

mW

)Φ

=0.3

π

1 10 100 100030

100

300

P OP (

m

a

t Δ

POP ~ B2

30

300

P OP =

VO

P I

a

t ΔΦ

(1/τeff)2

Electrical Demux, ref [9]( )

1 10 100 1000

Bandwidth, B (GHz)1 10 100 100030

Bandwidth, 1/τeff (GHz)

cons

umpt

ion,

e/bi

t)

1 nano1 nano

nonlinear semiconductors

nonlinear silica fibers

O

>100 pJ/bit

venti

onal

conv

ersion

？

o-e-o conversion

Elec

tric-

ener

gy c

E B(J

oule

1 pico1 pico

Optical signal-processing

with nonlinear silica-fibers

(length= 1 m, HNLF γ=30 W -1k

5～30pJ/bit

conv

eo-e

-oco

Optical signal-processingwith nonlinear semiconductors

(length << 1 mm)

numbers from this work (very first report, to our knowledge):• 10-20 pJ of dc energy, per one-bit all-optical signal-process• 7 × 107 electrons, per one-bit all-optical signal-process

1T1G100M 100G10G 10T1T1G100M 100G10G 10T⋅km -1)

Bit-rate, BR (b/s)


Our research backgrounds:B d b d idth f ti ll i d tBroad bandwidth of optically wired systems

(for the Industrial Systems Market)

100 THz

43 THzkm

)tic

al lo

ss (d

B/k

Opt

100-THz transmittance bandwidthof a standard, high-quality, silica-based single-mode-fiber cable.

Wavelength (μm)


g y g

Our research background:I i FTTH i i J YIncreasing FTTH capacity in Japan, Year 2002-2008

(in the Consumers Market)

1016

econ

d) ?Cap

acity

10 Peta

C k t1016

econ

d) ?Cap

acity

10 Peta

C k t

( )

FTTH: optically wired.14

1015

t Rat

es (b

it/se

Bit-

rate

Cco

nd)

100 T

1 Peta

Consumer marketin Japan

14

1015

t Rat

es (b

it/se

Bit-

rate

Cco

nd)

100 T

1 Peta


DSL&CATV: electrically wired.

mobile: electrically wireless.1013

1014

mbe

r-tim

es B

it

FTTH (100M)

DSL (10M)?num

ber ×

(bit

per s

e

10 Tera

100 Tera?

1013

1014

mbe

r-tim

es B

it

FTTH (100M)

DSL (10M)?num

ber ×

(bit

per s

e

10 Tera

100 Tera?

?

106

107

108

109

FTTH (100M)

DSL (10M)bscr

iber

num

bers

crib

er n

umbe

rs

1 Million

1 Billion

10 Million

10 Million

??

?

106

107

108

109

FTTH (100M)

DSL (10M)bscr

iber

num

bers

crib

er n

umbe

rs

1 Million

1 Billion

10 Million

10 Million

??

1012

bscr

iber

-Num CATV (8M)

MOBILE (200k)2002/03 2004/03 2006/03 2008/03 2010/03

?

ubsc

riber

-n (

1 Tera03/2002 03/2005 03/2008

1012

bscr

iber

-Num CATV (8M)

MOBILE (200k)2002/03 2004/03 2006/03 2008/03 2010/03

?

ubsc

riber

-n (

1 Tera03/2002 03/2005 03/2008

mobile (200k)

統計作成者：総務省、2008年公式発表

104

105 DSL (10M)

CATV (8M)

MOBILE (200k)

Sub

2002/03 2008/03

Subs

c

100 thousand

10 thousand

Month/Year03/2002 03/2005 03/2008


104

105 DSL (10M)

CATV (8M)

MOBILE (200k)

Sub

2002/03 2008/03

Subs

c

100 thousand

10 thousand

Month/Year03/2002 03/2005 03/2008

Consumer marketin JapanSu

bSu Month/YearSubSu Month/Year

9

表

図作成者：大平高志・坂口淳(2005) ⇒ Nguyen Tuan Anh(2008)

Ultrafast Optical Logic Lab., UECUltrafast Optical Logic Lab., UEC

examples ofExperimental resources --2008 presentExperimental resources, 2008 present

http://www1.ttcn.ne.jp/gagnon/resources-e.html


examples ofExperimental resources --2008 present

http://www1.ttcn.ne.jp/gagnon/resources-e.html

Experimental resources, 2008 present

200-Gb/s data-signal source, and,high-resolution monitor system (2008)

( i l d l k d l

Proto-type disc-loopmode-locked pulse laser (G1, 2005)

(commercial mode-locked pulse sources,data-pattern modulators,

homemade optical MUX’s, optical amps, e tc.,)Custom SOA chips

reliably coupled tolensed-optical-fiber cables

for studying their physical high-speed limits!for studying their physical high speed limits!

Commercial optical MUX’s optical ampsEye patterns of

12 5 Gb/s NRZ signals


Commercial optical MUX s, optical amps,optical cross-correlator,

high-precision electronic spectrum analyzer

12.5-Gb/s NRZ signals(by Sakaguchi and Nishida)

Collaboration research activitieshttp://www1.ttcn.ne.jp/gagnon/lab-j.html

Our lab – NEC R&D Center (Dr. Tajima), 2003

Our lab MIC/NICT project members 2003 2005Our lab – MIC/NICT project members, 2003-2005

Our lab – UEC-COE-program members, 2003-2007

Our lab – Technical Univ. Denmark (Dr. Nielsen, Prof. Mork), 2004-2005

Our lab – KDDI R&D Center (Dr. Nishimura), 2004-2005

Our lab – Univ. Tsukuba and AIST (METI/NEDO project), 2005-2007

Our lab – Japan Aviation Electronics Industries Ltd 2006-2007Our lab – Japan Aviation Electronics Industries, Ltd., 2006-2007

Our lab – MIC/NICT (Dr. Wada), 2007--


Grad- and undergrad-student members, FY2008g ,http://www1.ttcn.ne.jp/gagnon/lab-e.html#members


Grad- and undergrad-student membersghttp://www1.ttcn.ne.jp/gagnon/lab-e.html#members

we’re walking step-by-step towards

our future life

Optical phase-bias conditionby Nagasue, 2003

Optical phase-bias conditionby Nagasue, 2003

our future life …opening our laboratoryto anybody inside and outside campus

Graduated studentsfrom our master- and doctor-courses


open laboratory

Travels to conferenceshttp://www1.ttcn.ne.jp/gagnon/research-travels.html


Global spreads and collaborations (SMZ-DISC-related gate research)

societies from IEEE LEOS, OSA, JSAP, IEICE(OFC, ECOC, CLEO, IPRM)

BT LabsNEC/FESTA(NEDO)KDDIa s

ETHTU DenmarkHHI

Univ. TokyoMitsubishi (NEDO)Tokyo Inst Technol

MIT LL、MITPrinceton Univ.Bell Holmdel

*)*)HHI

CIPTU Eindhoven

Tokyo Inst. Technol.Univ. Tsukuba, AIST

Bell HolmdelUCSBUC Davis

*)

*)

)*)

Univ. Cork Univ. of Electro-Comm.UCLAAlphion

not very much yet,from China and India

*) owns strong facilities foroptical semiconductor integrations


from China and India

Selected publications, 2005-presentJournal Papers• J. Sakaguchi, M.L. Nielsen, T. Ohira, R. Suzuki, and Y. Ueno, 'Observation of small sub-pulses out of the delayed-

interference signal-wavelength converter,' Jpn. J. Appl. Phys vol. 44, no. 44, pp. L1358-1360, Oct. 2005.

http://www1.ttcn.ne.jp/gagnon/publications.html

g g , p pp y , , pp ,• M.L. Nielsen, J. Mørk, R. Suzuki, J. Sakaguchi, and Y. Ueno, 'Theoretical and experimental study of fundamental

differences in the noise suppression of high-speed SOA-based all-optical switches,' Optics Express vol. 13, no. 13, pp. 5080-5086, June 2005.

• M.L. Nielsen, J. Mørk, R. Suzuki, J. Sakaguchi, and Y. Ueno, 'Experimental and theoretical investigation of theM.L. Nielsen, J. Mørk, R. Suzuki, J. Sakaguchi, and Y. Ueno, Experimental and theoretical investigation of the impact of ultra-fast carrier dynamics on high-speed SOA-based all-optical switches,' Optics Express, vol. 14, no. 1, pp. 331-347, Jan. 2006.

• Y. Ueno, M. Toyoda, R. Suzuki, and Y. Nagasue, 'Modeling of the polarization-discriminating-symmetric-Mach-Zehnder-type optical-3R gate scheme and its available degree of random-amplitude-noise suppression ' OpticsZehnder type optical 3R gate scheme and its available degree of random amplitude noise suppression, Optics Express, vol. 14, no. 1, pp. 348-360, Jan. 2006.

• Y. Ueno, R. Nakamoto, J. Sakaguchi, and R. Suzuki, 'Optical-spectrum-synthesizer design within an all-optical semiconductor gate to reduce waveform distortion induced by carrier-cooling relaxation at sub-Teraherz frequencies ' Optics Express vol 14 no 26 pp 12655-12664 Dec 25 2006frequencies, Optics Express vol. 14, no. 26, pp. 12655 12664, Dec 25, 2006.

• Jun Sakaguchi, Ferran Salleras, Kohsuke Nishimura, and Yoshiyasu Ueno, "Frequency-dependent electric dc power consumption model including quantum-conversion efficiencies in ultrafast all-optical semiconductor gates," Optics Express vol. 15, no. 22, pp. 14887-14900, Oct. 2007.

• Jun Sakaguchi Mads L Nielsen Takashi Ohira Rei Su uki and Yoshi asu Ueno “Anal sis of sub pulse• Jun Sakaguchi, Mads L. Nielsen, Takashi Ohira, Rei Suzuki, and Yoshiyasu Ueno, Analysis of sub-pulse generation from the delayed-interference signal-wavelength converter for a wide carrier recovery rate range,” Jpn. J. Appl. Phys. vol. 47, no. 9, pp. 7182-7189, Sept. 2008.

• Jun Sakaguchi, Takehiro Nishida, Yoshiyasu Ueno, “200-Gb/s wavelength conversion using a delayed-interference ll ti l i d t t i t d b li l i ti t ti ” O ti C l 282 9 1728


all-optical semiconductor gate assisted by nonlinear polarization rotation,” Optics Comm. vol. 282, no. 9, pp. 1728-1733, May 2009.

Selected publications, 2005-present

Conferences Talks (except invited)• M.L. Nielsen, J. Mørk, J. Sakaguchi, R. Suzuki, and Y. Ueno, 'Reduction of nonlinear patterning effects in SOA-based all-optical switches

http://www1.ttcn.ne.jp/gagnon/publications.html

using optical filtering', Optical Fiber Communication Conference (OFC 2005), Los Angeles, USA, March 6-11, 2005, paper OThE7.• J. Sakaguchi, M.L. Nielsen, T. Ohira, R. Suzuki, and Y. Ueno, 'Observation of small sub-pulses generated in the DISC-type wavelength

converter,' 10th Optoelectronics and Communications Conference (OECC 2005), Seoul, Korea, July 5-8, 2005, paper 8F1-4.• R. Suzuki, S. Kobayashi, J. Sakaguchi, and Y. Ueno, 'Threshold condition for pulse generation from a DISC-loop-type pulse generator,'

IQEC/CLEO PR J l 11 15 2005 T k CMF1 4 1522 1523IQEC/CLEO-PR, July 11-15, 2005, Tokyo, paper CMF1-4, pp. 1522-1523.• J. Sakaguchi, Y. Ueno, K. Nishimura, and T. Yazaki, 'New method for characterizing the injected-carrier-to-photon conversion efficiencies

inside the ultrafast all-optical semiconductor gates,' 9th International Symposium on Contemporary Photonics Technology (CPT 2006), Tokyo, Jan. 11-13, 2006, paper no. P-26, pp. 130-131.

• R. Suzuki, T. Ohira, J. Sakaguchi, and Y. Ueno, '40-GHz mode-locked pulse generation with a new scheme of SOA-based pulse generation,'R. Suzuki, T. Ohira, J. Sakaguchi, and Y. Ueno, 40 GHz mode locked pulse generation with a new scheme of SOA based pulse generation, CLEO/QELS 2006, May 21-26, 2006, Long beach, USA, paper no. CMG5.

• J. Sakaguchi, Y. Ueno, K. Nishimura, and T. Yazaki, 'New method for characterizing the injected-carrier-to-photon conversion efficiencies inside the ultrafast all-optical semiconductor gates,' Optical Amplifiers and their Applications (OAA 2006), June 25-28, 2006, Whisler, Canada, paper no. OTuC4.

• Jun Sakaguchi, Ferran Salleras, and Yoshiyasu Ueno, "Frequency-dependent electric dc power consumption in ultrafast all-optical semiconductor gates," 12th Optoelectronics and Communications Conference (OECC 2007), July 9-13, 2007, Yokohama, Japan, paper no. 10D2-3.

• Ferran Salleras, Masanori Honma, Jun Sakaguchi, Yoshiyasu Ueno, Nobuhiko Ozaki, Yoshinori Kitagawa, Kiyoshi Asakawa, Naoki Ikeda, Y hi S i t "C it i f i d l d k f th lt f t li f h t i t l/ t d tYoshimasa Sugimoto, "Criterion for removing a delayed peak from the ultrafast nonlinear response of photonic crystal/quantum dotwaveguides," 1st Nonlinear Photonics Topical Meeting (NP 2007), Optical Society of America, Quebec city, Canada, Sept. 2-6, 2007, paper no. NTuC6.

• Ryoichi Nakamoto, Hiroyuki Takeuchi, Jun Sakaguchi, and Yoshiyasu Ueno, "1.55-um, mode-locked, single-longitudinal-mode, 10-GHz, 2-ps, ultra-short optical pulse train from our original semiconductor-based pulse-source scheme," Topical Conference on Nanophotonics


ps, ultra short optical pulse train from our original semiconductor based pulse source scheme, Topical Conference on Nanophotonics (NANO), Optical Society of America, May 26-29, 2008, Southeast Univ., Nanjing, P.R. China, paper no. Nano-08-191.

Invited Talks (international), 2001-present( ), p

Y. Ueno, S. Nakamura, and K. Tajima, "Ultrahigh-speed data regeneration and wavelength

http://www1.ttcn.ne.jp/gagnon/publications.htmlj g p g g

conversion for OTDM systems," ECOC 2001, Amsterdam, the Netherlands.

Y. Ueno, S. Nakamura, and K. Tajima, "Ultrafast SOA-based SMZ-type all-optical regenerators and wavelength converters," ssdm 2002, Nagoya, Japan

S. Nakamura, T. Tamanuki, Y. Ueno, and K. Tajima, "Ultrafast optical demultiplexing, regeneration, and wavelength conversion with symmetric-Mach-Zehnder all-optical switches," OFC 2003, Atlanta, USA.

Y. Ueno, 'All-optical signal processing for over-100-Gb/s optical TDM networks,' IEEE LEOS Annual Meeting (LEOS 2003), Tucson, USA.

G. Theophilopoulos, Y. Ueno, and S.A. Hamilton, panel discussion 'Outlook in 10-20 years,' OFC k h 'All ti l l gth i d ig l i g f t g tiOFC workshop 'All-optical wavelength conversion and signal processing for next generation network,' OFC 2005, Los Angeles, USA.

Y. Ueno, M. Toyoda, and R. Suzuki, 'Theoretical models of the SOA-based SMZ-type optical-3R gates,' OSA-OAA 2005, Budapest, Hungary.g , , p , g y

Yoshiyasu Ueno, Jun Sakaguchi, Ryoichi Nakamoto, and Takehiro Nishida, "Ultrafast, low-energy-consumption, semiconductor-based, all-optical gate devices (Invited Talk)," 4th Asia-Pacific Microwave Photonics Conference (APMP 2009), April 22-24, 2009, Beijing, P.R. China.


Our alumni members who joined global industry and academy 0

0.5

1.0

1.5-20

-100

+10 +20

Inte

nsity

(a. u

.)

Distance in air, z (mm)Gated waveform, 1540 nm1 0 0 1 0 0 0 1 0 1 1 1 …

0

0.5

1.0

1.5-20

-100

+10 +20

Inte

nsity

(a. u

.)

Distance in air, z (mm)Gated waveform, 1540 nm1 0 0 1 0 0 0 1 0 1 1 1 …

Our alumni members who joined global industry and academy

NEC Communication Systems, Ltd.http://www1.ttcn.ne.jp/gagnon/professionals-e.html

-75 -50 -25 0 +25 +50 +75

0

Time (ps)

-75 -50 -25 0 +25 +50 +75

0

Time (ps)

Hitachi Cable, Ltd. OAS Co., Ltd. Tokyo Institute of Technology (Titech) Mie Bank., Ltd. Mie Bank., Ltd. Electric Power Development Co., Ltd. (J-Power) eAccess, Ltd. Hitachi Communication Technologies, Ltd. I t h C ti Innotech Corporation NEC Corporation (System device research laboratories, Ohtsu city) Hitachi Kokusai Electric, Inc. Fujitsu Access, Limited NEC Corporation (computer division, Fuchu city) Sumitomo Electric Industries, Ltd. (Yokohama city) Nara Institute of Science and Technology, Research Associate Bookham, Inc. (Zurich plant, Switzerland) Bookham, Inc. (Zurich plant, Switzerland)


statistics of:

our National University of Electro-Communicationsour National University of Electro Communicationshttp://www.uec.ac.jp/eng/index.html

Location: Chofu city, Tokyo (border between metropolitan and suburb areas), Japan

Number of faculty members: 350Number of bachelor students: 4,400 (120 from outside japan)Number of grad students: 1 400 (180 from outside japan)Number of grad students: 1,400 (180 from outside japan)

number of foreign students: 300 (more than half from China)Number of affiliated international universities: about 20 (China, Australia, Thai, Estonia, etc.)

Center-of-Excellence (COE) Program (physics category of MEXT):program’s title: Innovation in Coherent Optical Sciences, 2003-2007

CEP-locked frequency-comb, bose-einstein-condensation, atomic optics, etc.q y , , p ,http://www.ils.uec.ac.jp/COEcoherent/eng/index.html

number of original member professors: 22more biased to PhD students than bachelor students.


Yoshiyasu Ueno, Prof. Dr.

Members of IEEE, OSA, and JSAP.1961: born in Osaka, Japan.1987: received Master’s degree of Physics, Univ. of Tokyo.1987-1994: AlGaInP crystal growth and 680-nm red lasers, Opto-Electronics Research Labs. , NEC Corp.1995-1996: visiting researcher in CREOL/UCF, USA.1998: received PhD degree of Applied Physics, Univ. of Tokyo.1996-2002: Ultrafast all-optical semiconductor gates, Opto-Electronics Research Labs. , NEC Corp.2002-present: National University of Electro-Communications, Tokyo.

Times of Citations (Thomson-Reuters database):Total times cited= 900Total times cited 900

• 400 from authored and 500 from co-authored SCI-indexed journal papers in 1987-2009.• average times cited= 900 / 50 journal papers = 18 times per paper (as of March 2010).

Invited Talks:Invited Talks:• Y. Ueno, S. Nakamura, H. Hatakeyama, T. Tamanuki, T. Sasaki, and K. Tajima, "168-Gb/s OTDM wavelength conversion using SMZ-type all-optical switch," 26th European Conference on Optical Communication (ECOC 2000), Sept. 4-7, 2000, Munich, Germany.• Y. Ueno, 'All-optical signal processing for over-100-Gb/s optical TDM networks (Invited Talk),' IEEE LEOS Annual Meeting (LEOS 2003), Oct. 26-30, 2003, Tucson, USA.• G Theophilopoulos Y Ueno and S A Hamilton panel discussion 'Outlook in 10 20 years (invited) ' OFC workshop 'All optical wavelength conversion• G. Theophilopoulos, Y. Ueno, and S.A. Hamilton, panel discussion Outlook in 10-20 years (invited), OFC workshop All-optical wavelength conversion and signal processing for next generation network,' Optical Fiber Communication Conference (OFC 2005), Los Angeles, March 6-11, 2005.• Y. Ueno, M. Toyoda, and R. Suzuki, 'Theoretical models of the SOA-based SMZ-type optical-3R gates (Invited talk),' Optical Amplifiers and their Applications (OAA 2005), Budapest, Hungary, August 7-10, 2005.• Yoshiyasu Ueno, Jun Sakaguchi, Ryoichi Nakamoto, and Takehiro Nishida, "Ultrafast, low-energy-consumption, semiconductor-based, all-optical gate devices (Invited Talk)," 4th Asia-Pacific Microwave Photonics Conference (APMP 2009), April 22-24, 2009, Beijing, P.R. China. digest.


( ), ( ), p , , j g, g• Yoshiyasu Ueno, "Roadmap of ultrafast energy-saving optical semiconductor devices to Year 2025 (Invited Talk)," 42nd International Conference on Solid Sate Devices and Materials (ssdm2010), Sept. 22-24, 2010, Univ. of Tokyo, Tokyo, Japan.

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