renesas diode data book
DESCRIPTION
Full Diode Data BookTRANSCRIPT
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April 1st, 2010 Renesas Electronics Corporation
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www.renesas.com 2009.03
Renesas Diode
Data Book
Renesas Diode Data Book
REJ04G0001-0100
2
3
Contents
Lineup ................................................................................................................................................................ 5
Standard Package Dimensions ............................................................................................................. 12
Nomenclature of Renesas Diodes ....................................................................................................... 21
Renesas Diode Symbols and Their Definitions ............................................................................. 25
Reliability of Renesas Diodes ................................................................................................................ 29
Renesas Diode Manufacturing Process and Quality Control .................................................. 39
Precautions for Application ...................................................................................................................... 42
Standard Taping Specifications ............................................................................................................ 60
Selection Table According to Main Diode Applications ............................................................. 70
Data Sheets .................................................................................................................................................... 72 Variable Capacitance Diodes for VCO .................................................................................................................. 72
Variable Capacitance Diodes for Electronic Tuning ............................................................................................... 124
High Frequency Switching Diodes ......................................................................................................................... 148
PIN Diodes for Antenna Switch ............................................................................................................................. 152
PIN Diodes for Attenuators .................................................................................................................................... 180
Small Signal Diodes .............................................................................................................................................. 190
Schottky Barrier Diodes for Detector and Mixer .................................................................................................... 225
Schottky Barrier Diodes for High Speed Switching ................................................................................................ 259
Diodes for System Protection ................................................................................................................................ 363
Zener Diodes for Surge Absorption ....................................................................................................................... 367
Zener Diodes for Stabilized Power Supply ............................................................................................................ 425 Note: Please check latest data by web site.
4
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property rights or any other rights of Renesas or any third party with respect to the information in this document.
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of the use of any information in this document, including, but not limited to, product data, diagrams, charts,
programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military
applications such as the development of weapons of mass destruction or for the purpose of any other military
use. When exporting the products or technology described herein, you should follow the applicable export
control laws and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and
application circuit examples, is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas products listed in this
document, please confirm the latest product information with a Renesas sales office. Also, please pay regular
and careful attention to additional and different information to be disclosed by Renesas such as that disclosed
through our website. (http://www.renesas.com)
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas
assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information
included in this document.
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of the total system before deciding about the applicability of such information to the intended application.
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information in this document or Renesas products.
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damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to
the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or
damages arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific
characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions.
Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or
damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and
software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment
for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer
software alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
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should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written
approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this
document, Renesas semiconductor products, or if you have any other inquiries.
Notes regarding these materials
5
Lineup
Variable Capacitance Diodes for VCO Ratings Characteristics
Application Package Part No. VR (V) C (pF) n CVR/CVR rs (Ω) max PageHVU17 15 C1 = 50.0 to 85.0, C3 = 16.1 to 27.3,
C4.5 = 5.23 to 8.84 5.6 min 1/4.5 — 72
HVU350B 15 C1 = 15.5 to 17.0, C4 = 5.0 to 6.0 2.8 min 1/4 0.5 74 HVU355B 15 C1 = 6.4 to 7.2, C4 = 2.55 to 2.95 2.2 min 1/4 0.6 76 HVU359 15 C1 = 24.8 to 29.8, C4 = 6.0 to 8.3 3.0 min 1/4 1.5 78 HVU362 15 C1 = 41.6 to 49.9, C10 = 10.1 to 14.8 3.0 min 1/4 2 80
2.0 min 1/4
URP
HVU383B 15 C1 = 19.0 to 21.0, C4 = 8.5 to 10.0, C7 = 4.5 to 5.5 3.5 min 1/7
0.5 82
HVC350B 15 C1 = 15.5 to 17.0, C4 = 5.0 to 6.0 2.8 min 1/4 0.5 74 HVC355B 15 C1 = 6.4 to 7.2, C4 = 2.55 to 2.95 2.2 min 1/4 0.6 76 HVC358B 15 C1 = 19.5 to 21.0, C4 = 8.0 to 9.3 2.2 min 1/4 0.4 98 HVC359 15 C1 = 24.8 to 29.8, C4 = 6.0 to 8.3 3.0 min 1/4 1.5 — HVC362 15 C1 = 41.6 to 49.9, C4 = 10.1 to 14.8 3.0 min 1/4 2 80 HVC365 15 C1 = 27.05 to 28.55, C4 = 6.05 to 7.55 3.0 min 1/4 1.5 84 HVC368B 10 C1 = 15.0 to 16.5, C2 = 9.0 to 10.2, C3 = 5.0 to 6.0 2.2 min 1/3 1.1 86 HVC374B 10 C1 = 21.5 to 24.0, C2 = 12.5 to 14.5 1.68 to 1.75 1/2 1.2 88 HVC375B 10 C1 = 15.0 to 16.5, C3 = 5.0 to 6.0, C4 = 3.3 to 4.0 4.0 min 1/4 1.1 90
4.3 min 1/4 HVC376B 15 C0.2 = 39.5 to 44.5, C1 = 25.0 to 28.5, C2.3 = 8.75 to 12.05, C4 = 4.8 to 6.8 3.55 min 0.2/2.3
0.8 92
2.0 min 1/4 HVC383B 15 C1 =19.0 to 21.0, C4 = 8.5 to 10.0, C7 = 4.5 to 5.53.5 min 1/7
0.5 82
HVC385B 15 C0.5 = 7.2 to 7.7, C2.5 = 2.7 to 3.2 2.43 to 2.57 0.5/2.5 0.75 94
UFP
HVC386B 15 C1 = 43.0 to 49.0, C4 = 18.5 to 25.5 1.8 min 1/4 0.85 96 HVD350B 15 C1 = 15.5 to 17.0, C4 = 5.0 to 6.0 2.8 min 1/4 0.5 74 HVD355B 15 C1 = 6.4 to 7.2, C4 = 2.55 to 2.95 2.2 min 1/4 0.6 76 HVD358B 15 C1 = 19.5 to 21.0, C4 = 8.0 to 9.3 2.2 min 1/4 0.4 98 HVD359 15 C1 = 24.8 to 29.8, C4 = 6.0 to 8.3 3.0 min 1/4 1.5 78 HVD362 15 C1 = 41.6 to 49.9, C4 = 10.1 to 14.8 3.0 min 1/4 2 80 HVD365 15 C1 = 27.05 to 28.55, C4 = 6.05 to 7.55 3.0 min 1/4 1.5 84 HVD368B 10 C1 = 15.0 to 16.5, C2 = 9.0 to 10.2, C3 = 5.0 to 6.0 2.2 min 1/3 1.1 86 HVD374B 10 C1 = 21.5 to 24.0, C2 = 12.5 to 14.5 1.68 to 1.75 1/2 1.2 88
4.3 min 1/4 HVD376B 15 C0.2 = 39.5 to 44.5, C1 = 25.0 to 28.5, C2.3 = 8.75 to 12.05, C4 = 4.8 to 6.8 3.55 min 0.2/2.3
0.8 92
HVD385B 15 C0.5 = 7.2 to 7.7, C2.5 = 2.7 to 3.2 2.43 to 2.57 0.5/2.5 0.75 94 HVD396C 10 C1 = 14.6 to 15.8, C4 = 5.2 to 5.8 2.62 min 1/4 0.4 100
SFP
HVD399C 10 C0.5 = 18.5 to 20.0, C2.5 = 7.3 to 8.6 2.30 to 2.46 0.5/2.5 0.4 102HVL355C 15 C1 = 6.62 to 7.02, C4 = 2.60 to 2.95 2.35 to 2.55 1/4 0.6 104HVL358C 15 C1 = 19.5 to 20.9, C4 = 8.30 to 8.95 2.20 to 2.43 1/4 0.4 106HVL368C 10 C1 = 15.0 to 16.5, C2 = 9.0 to 10.2, C3 = 5.0 to 6.0 2.2 min 1/3 1.1 86 HVL375C 10 C1 = 15.0 to 16.5, C3 = 5.0 to 6.0, C4 = 3.3 to 4.0 4.0 min 1/4 1.1 90 HVL385C 15 C0.5 = 7.3 to 7.7, C2.5 = 2.90 to 3.18 2.43 to 2.57 0.5/2.5 0.75 108HVL396C 10 C1 = 14.6 to 15.8, C4 = 5.2 to 5.8 2.62 min 1/4 0.4 100HVL399C 10 C0.5 = 18.5 to 20.0, C2.5 = 7.3 to 8.6 2.30 to 2.46 0.5/2.5 0.4 102RKV603KL 15 C0.5 = 7.38 to 7.92, C2.5 = 3.26 to 3.58 2.1 to 2.4 0.5/2.5 0.75 110RKV604KL 15 C1 = 2.35 to 2.70, C3 = 1.22 to 1.42 1.73 to 2.10 1/3 0.7 112RKV605KL 10 C0.5 = 18.5 to 20.0, C2.5 = 8.55 to 9.45 2.02 to 2.26 0.5/2.5 0.4 114RKV606KL 15 C1 = 3.18 to 3.50, C3 = 1.63 to 1.80 1.81 to 2.08 1/3 0.75 116RKV607KL 15 C1 = 2.03 to 2.20, C3 = 1.05 to 1.20 1.75 to 2.00 1/3 0.85 118
EFP
RKV608KL 15 C1 = 4.18 to 4.52, C4 = 1.85 to 2.11 2.13 to 2.27 1/4 0.75 120RKV600KP 15 C1 = 6.62 to 7.02, C4 = 2.60 to 2.95 2.35 to 2.55 1/4 0.6 104RKV601KP 15 C0.5 = 7.3 to 7.7, C2.5 = 2.90 to 3.18 2.43 to 2.57 0.5/2.5 0.75 108RKV603KP 15 C0.5 = 7.38 to 7.92, C2.5 = 3.26 to 3.58 2.1 to 2.4 0.5/2.5 0.75 110RKV604KP 15 C1 = 2.35 to 2.70, C3 = 1.22 to 1.42 1.73 to 2.10 1/3 0.7 112RKV605KP 10 C0.5 = 18.5 to 20.0, C2.5 = 8.55 to 9.45 2.02 to 2.26 0.5/2.5 0.4 114RKV606KP 15 C1 = 3.18 to 3.50, C3 = 1.63 to 1.80 1.81 to 2.08 1/3 0.75 116RKV607KP 15 C1 = 2.03 to 2.20, C3 = 1.05 to 1.20 1.75 to 2.00 1/3 0.85 118
MP6
RKV608KP 15 C1 = 4.18 to 4.52, C4 = 1.85 to 2.11 2.13 to 2.27 1/4 0.75 120
VCO
CMPAK-4 HVB350BYP 15 C1 = 15.5 to 17.0, C4 = 5.0 to 6.0 2.8 min 1/4 0.5 122
Lineup
6
Variable Capacitance Diodes for Electronic Tuning Ratings Characteristics
Application Package Part No. VR (V) C (pF) n CVR/CVR rs (Ω) max PageSFP RKV651KK 15 C0.2 = 29.5 to 33.0, C2.3 = 7.80 to 10.7 2.9 to 4.1 0.2/2.3 0.6 —
RKV650KL 15 C0.5 = 7.2 to 7.8, C2.5 = 2.05 to 2.35 3.25 to 3.70 0.5/2.5 0.75 124 RKV651KL 15 C0.2 = 29.5 to 33.0, C2.3 = 7.80 to 10.7 2.9 to 4.1 0.2/2.3 0.6 — RKV652KL 10 C1 = 2.9 to 3.3, C3 = 1.12 to 1.30 2.28 to 2.90 1/3 1.1 126
EFP
RKV653KL 10 C1 = 2.6 to 2.9, C3 = 0.97 to 1.08 2.40 to 3.05 1/3 1.8 128 RKV650KP 15 C0.5 = 7.2 to 7.8, C2.5 = 2.05 to 2.35 3.25 to 3.70 0.5/2.5 0.75 124 RKV652KP 10 C1 = 2.9 to 3.3, C3 = 1.12 to 1.30 2.28 to 2.90 1/3 1.1 126
Digital audio
MP6
RKV653KP 10 C1 = 2.6 to 2.9, C3 = 0.97 to 1.08 2.40 to 3.05 1/3 1.8 128 URP HVU316 30 C1 = 5.16 to 7.22, C25 = 0.48 to 0.76 9.0 min 1/25 1.2 — UFP HVC316 30 C1 = 5.16 to 7.22, C25 = 0.48 to 0.76 9.0 min 1/25 2.2 130
BS/CS Tuner
Tuning Tuner
SFP HVD316 30 C1 = 5.16 to 7.22, C25 = 0.48 to 0.76 9.0 min 1/25 2.2 — HVU202B 32 C2 = 14.15 to 15.75, C25 = 2.06 to 2.35 6.3 min 2/25 0.57 — HVU326C 15 C1 = 13.0 to 16.0, C10 = 2.0 to 2.3 6.0 min 1/10 0.6 132
URP
RKV500KG 34 C2 = 14.15 to 15.75, C25 = 1.89 to 2.18 6.3 min 2/25 0.57 134 HVC202B 32 C2 = 14.15 to 15.75, C25 = 2.06 to 2.35 6.3 min 2/25 0.57 — HVC326C 15 C1 = 13.0 to 16.0, C10 = 2.0 to 2.3 6.0 min 1/10 0.6 132
UFP
RKV500KJ 34 C2 = 14.15 to 15.75, C25 = 1.89 to 2.18 6.3 min 2/25 0.57 134 HVD326C 15 C1 = 13.0 to 16.0, C10 = 2.0 to 2.3 6.0 min 1/10 0.6 132
UHF Tuning
SFP RKV500KK 34 C2 = 14.15 to 15.75, C25 = 1.89 to 2.18 6.3 min 2/25 0.57 134 HVU300C 34 C2 = 39.5 to 47.0, C25 = 2.6 to 3.0 14.5 min 2/25 1.1 — HVU306C 34 C2 = 29.5 to 34.0, C25 = 2.57 to 2.90 11.0 min 2/25 0.75 — HVU307 32 C2 = 32.2 to 37.5, C25 = 2.57 to 3.00 12.0 min 2/25 0.85 — HVU327C 15 C1 = 30.5 to 33.5, C10 = 2.6 to 2.9 11.0 min 1/10 0.8 136 HVU328C 15 C1 = 41.0 to 45.0, C10 = 2.6 to 2.9 14.5 min 1/10 1.2 138 HVU363B 32 C1 = 36.0 to 42.0, C28 = 2.36 to 2.75 13.7 min 1/28 0.75 — RKV501KG 34 C2 = 29.5 to 34.0, C25 = 2.45 to 2.78 11.0 min 2/25 0.75 140
URP
RKV502KG 34 C2 = 41.5 to 47.0, C25 = 2.6 to 3.0 14.5 min 2/25 1.1 142 HVC300C 34 C2 = 39.5 to 47.0, C25 = 2.6 to 3.0 14.5 min 2/25 1.1 — HVC306C 34 C2 = 29.5 to 34.0, C25 = 2.57 to 2.90 11.0 min 2/25 0.75 — HVC307 32 C2 = 32.2 to 37.5, C25 = 2.57 to 3.00 12.0 min 2/25 0.85 — HVC327C 15 C1 = 30.5 to 33.5, C10 = 2.6 to 2.9 11.0 min 1/10 0.8 136 HVC328C 15 C1 = 41.0 to 45.0, C10 = 2.6 to 2.9 14.5 min 1/10 1.2 138 HVC363B 32 C1 = 36.0 to 42.0, C28 = 2.36 to 2.75 13.7 min 1/28 0.75 — RKV501KJ 34 C2 = 29.5 to 34.0, C25 = 2.45 to 2.78 11.0 min 2/25 0.75 140
UFP
RKV502KJ 34 C2 = 41.5 to 47.0, C25 = 2.6 to 3.0 14.5 min 2/25 1.1 142 HVD327C 15 C1 = 30.5 to 33.5, C10 = 2.6 to 2.9 11.0 min 1/10 0.8 136 HVD328C 15 C1 = 41.0 to 45.0, C10 = 2.6 to 2.9 14.5 min 1/10 1.2 138 RKV501KK 34 C2 = 29.5 to 34.0, C25 = 2.45 to 2.78 11.0 min 2/25 0.75 140
VHF Tuning
SFP
RKV502KK 34 C2 = 41.5 to 47.0, C25 = 2.6 to 3.0 14.5 min 2/25 1.1 142
TV Tuner
AFC UFP HVC308A 35 C2 = 13.7 to 15.9, C20 = 1.65 to 2.06 7.12 min 2/20 0.95 144 FM Tuner
Tuning MPAK HVM16 14 C2 = 43.0 to 48.1, C8 = 24.6 to 29.2 1.65 to 1.75 2/8 — 146
High Frequency Switching Diodes Ratings Characteristics
Application Package Part No. VR (V)
IF (mA)
Pd (mW)
VF (V)
max.IF
(mA)
C (pF)max.
VR (V)
f (MHz)
rf (Ω)
max. IF
(mA) f
(MHz) PageMPAK HSM2694 35 — 150 1.0 10 1.2 6 1 0.9 2 100 — URP HSU277 35 — 150 1.0 10 1.2 6 1 0.7 2 100 —
HSC277 35 — 150 1.0 10 1.2 6 1 0.7 2 100 — UFP RKS151KJ 35 — 150 1.0 10 0.8 6 1 0.7 2 100 148 RKS150KK 35 — 150 1.0 10 1.2 6 1 0.7 2 100 148
High frequency switching
SFP RKS151KK 35 — 150 1.0 10 0.8 6 1 0.7 2 100 150
Lineup
7
PIN Diodes for Antenna Switch Ratings Characteristics
Application Package Part No. VR (V)
IF (mA)
Pd (mW)
VF (V)
max.IF
(mA)
C (pF)max.
VR (V)
f (MHz)
rf (Ω)
max. IF
(mA) f
(MHz) PageHVU131 60 100 150 1 10 0.8 1 1 1 10 100 152 URP HVU145 60 50 150 0.9 2 0.45 1 1 1.8 10 100 154 HVC131 60 100 150 1 10 0.8 1 1 1 10 100 152 HVC132 60 100 150 1 10 0.5 1 1 2 10 100 156 HVC142A 30 100 150 1 10 0.35 1 1 1.3 10 100 158
UFP
HVC145 60 50 150 0.9 2 0.45 1 1 1.8 10 100 154 HVD131 60 100 150 1 10 0.8 1 1 1 10 100 152 HVD132 60 100 150 1 10 0.5 1 1 2 10 100 156 HVD142A 30 100 150 1 10 0.35 1 1 1.3 10 100 158 HVD144A 30 100 150 0.9 2 0.43 1 1 1.8 2 100 160 HVD145 60 50 150 0.9 2 0.45 1 1 1.8 10 100 154
2.5 typ 2 100 HVD147 30 100 150 1 10 0.31 1 1 1.5 10 100
162
SFP
RKP201KK 30 100 150 0.9 2 0.35 1 1 2 2 100 164 HVL142A 30 100 100 1 10 0.35 1 1 1.3 10 100 158 HVL144A 30 100 100 0.9 2 0.43 1 1 1.8 2 100 160 HVL145 60 50 100 0.9 2 0.45 1 1 1.8 10 100 154
2.5 typ 2 100 HVL147 30 100 100 1 10 0.31 1 1 1.5 10 100
162
EFP
RKP201KL 30 100 100 0.9 2 0.35 1 1 2 2 100 164 RKP200KP 30 100 100 1 10 0.35 1 1 1.3 10 100 166 MP6 RKP204KP 30 100 100 1 10 0.35 1 1 1.1 10 100 168 RKP450KE 30 100 100 1 10 0.35 1 1 1.3 10 100 170 RKP451KE 30 100 100 1 10 0.35 1 1 1.3 10 100 172 RKP452KE 30 100 100 1 10 0.35 1 1 1.3 10 100 174 RKP453KE 30 100 100 1 10 0.35 1 1 1.3 10 100 176
MP6-8
RKP454KE 30 100 100 1 10 0.35 1 1 1.3 10 100 178 1 10 1.3 10 100 RKP400KS 30 100 100
0.9 2 0.35 1 1
2 2 100 —
0.35 1 1 1.3 10 2.5 2
RKP401KS 30 100 100 1 10 0.31 1 1
1.5 10
100 —
RKP402KS 30 100 100 1 10 0.35 1 1 1.3 10 100 — 1 10 1.3 10 RKP403KS 30 100 100
0.9 2 0.35 1 1
2 2 100 —
1 10 1.3 10 RKP404KS 30 100 100 0.9 2
0.35 1 1 2 2
100 —
RKP405KS 30 100 100 1 10 0.35 1 1 1.3 10 100 — 1 10 1.3 10 RKP406KS 30 100 100
0.9 2 0.35 1 1
2 2 100 —
1 10 1.3 10 RKP407KS 30 100 100 0.9 2
0.35 1 1 2 2
100 —
2.5 2 RKP408KS 30 100 100 1 10 0.31 1 1 1.5 10
100 —
2.5 2 1 10 0.311.5 10
RKP409KS 30 100 100
0.9 2 0.35
1 1
2 2
100 —
1 10 1.3 10 RKP410KS 30 100 100 0.9 2
0.35 1 1 2 2
100 —
RKP411KS 30 100 100 1 10 0.35 1 1 1.3 10 100 — RKP412KS 30 100 100 1 10 0.35 1 1 1.3 10 100 —
2.5 2 RKP413KS 30 100 100 1 10 0.31 1 1 1.5 10
100 —
1 10 1.3 10 RKP414KS 30 100 100 0.9 2
0.35 1 1 2 2
100 —
Antenna switching
MFP12
RKP415KS 30 100 100 1 10 0.35 1 1 1.3 10 100 —
Lineup
8
PIN Diodes for Attenuators Ratings Characteristics
Application Package Part No. VR (V)
IF (mA)
Pd (mW)
VF (V)
max.IF
(mA)
C (pF) max.
VR (V)
f (MHz)
rf (Ω)
max. IF
(mA) f
(MHz) PageHVM14 50 50 100 1 50 0.25 typ 50 1 7 10 100 180 HVM14S 50 50 100 1 50 0.25 typ 50 1 7 10 100 180 HVM14SR 50 50 100 1 50 0.25 typ 50 1 7 10 100 180 HVM187S 60 50 100 1 10 2.4 0 1 5.5 10 100 182 HVM187WK 60 50 100 1 10 2.4 0 1 5.5 10 100 182
MPAK
HVM189S 60 50 100 1 10 1.8 0 1 5.5 10 100 — HVL192 30 50 100 1 10 0.3 1 1 3.2 10 100 — RKP300KL 30 50 100 1 10 0.25 1 1 3.7 10 100 184
EFP
RKP301KL 30 100 100 1 10 0.3 20 1 2.5 10 100 — HVD191 30 100 150 1 10 0.37 1 1 2.5 10 100 — RKP300KK 30 50 100 1 10 0.25 1 1 3.7 10 100 184
SFP
RKP301KK 30 100 150 1 10 0.3 20 1 2.5 10 100 — HVC190 50 50 150 1 50 0.35 50 1 5 10 100 186 RKP300KJ 30 50 100 1 10 0.25 1 1 3.7 10 100 184
UFP
RKP301KJ 30 100 150 1 10 0.3 20 1 2.5 10 100 — URP HVU187 60 50 100 1 10 2.4 0 1 5.5 10 100 182
HVB14S 50 50 100 1 50 0.25 typ 50 1 7 10 100 180 HVB190S 50 50 100 1 50 0.35 50 1 5 10 100 — RKP300WKQE 30 50 100 1 10 0.25 20 1 3.7 10 100 188
CMPAK
RKP301WKQE 30 100 100 1 10 0.3 20 1 2.5 10 100 —
Attenuator
CMPAK-4 HVB187YP 60 50 100 1 10 2.4 0 1 5.5 10 100 —
Small Signal Diodes Ratings Characteristics
Application Package Part No. VR (V)
IO (mA)
IFSM (A)
Pd (mW)
VF (V)
max.IF
(mA)
trr (ns)max.
IF (mA)
C (pF) max.
VR (V)
f (MHz) Page
1S2075(K) 30 100 0.6 250 0.8 10 8 10 3.5 1 1 — 1S2076 30 150 1 250 0.8 10 8 10 3 1 1 190
DO-35
1S2076A 60 150 1 250 0.8 10 8 10 3 1 1 192 1SS119 30 150 1 250 0.8 10 3.5 10 3 1 1 194 1SS120 60 150 1 250 0.8 10 3.5 10 3 1 1 196 1SS270 30 150 1 250 0.8 10 3.5 10 3 1 1 — 1SS270A 60 150 1 250 0.8 10 3.5 10 3 1 1 —
MHD
HSS104 35 110 0.4 300 1.2 100 3 10 3 0.5 1 — LLD HSK120 60 150 4 — 0.8 10 3 10 3 0 1 —
HSM123 80 100 4 — 1.2 100 3 10 4 0 1 198 HSM124S 80 100 4 — 1.2 100 100 10 4 0 1 200 HSM221C 80 100 4 — 1.2 100 3 10 2 0 1 202 HSM223C 80 100 4 — 1.2 100 3 10 2 0 1 204 HSM2836C 80 100 4 — 1.2 100 20 10 4 0 1 206
MPAK
HSM2838C 80 100 4 — 1.2 100 3 10 2 0 1 208 HSU119 80 100 4 — 1.2 100 3 10 2 0 1 210 URP RKS100KG 80 — 4 — 1.2 100 3 10 2 0 1 —
UFP HSC119 80 100 4 — 1.2 100 3 10 2 0 1 210 SFP HSD119 80 100 4 — 1.2 100 3 10 2 0 1 210
HSB123 80 100 4 — 1.2 100 3 10 2 0 1 212 HSB124S 80 100 4 — 1.2 100 100 10 4 0 1 214 HSB2836 80 100 4 — 1.2 100 20 10 4 0 1 216
High speed switching
CMPAK
HSB2838 80 100 4 — 1.2 100 3 10 2 0 1 218 1SS81 150 200 1 400 1 100 100 30 1.5 typ 0 1 — 1SS82 200 200 1 400 1 100 100 30 1.5 typ 0 1 —
DO-35
1SS83 250 200 1 400 1 100 100 30 1.5 typ 0 1 — HSS81 150 150 1 400 1 100 100 30 1.5 typ 0 1 — HSS82 200 150 1 400 1 100 100 30 1.5 typ 0 1 —
MHD
HSS83 250 150 1 400 1 100 100 30 1.5 typ 0 1 — LLD HSK83 250 150 1 — 1 100 100 30 1.5 typ 0 1 —
HSM83 250 100 2 — 1.2 100 100 30 3 0 1 — MPAK HSM122 400 150 1 150 1.2 100 20(μs
) 30 10 0 1 —
HSU83 250 100 2 — 1.2 100 100 30 3 0 1 220 URP RKS101KG 400 100 2 — 1.5 100 100 30 3 0 1 222
CMPAK HSB83 250 100 2 — 1.2 100 100 30 3 0 1 —
High voltage switching
CMPAK-4 HSB83YP 250 100 2 — 1.2 100 100 30 3 0 1 —
Note: (K) indicates high-reliability products.
Lineup
9
Schottky Barrier Diodes for Detector and Mixer Ratings Characteristics
Application Package Part No.
VR [VRRM]
(V)
IO [IF]
(mA)
IF (mA) min.
VF (V)
VF (V)
max. IF
(mA)
C (pF) max.
VR (V)
f (MHz) Page
HSB226S [25] [50] — — 0.33 1 2.8 1 1 225 HSB226WK [25] [50] — — 0.33 1 2.8 1 1 225 HSB276AS [5] 30 35 0.5 — — 0.9 0.5 1 227 HSB276S 3 30 35 0.5 — — 0.9 0.5 1 229 HSB278S 30 30 — — 0.3 1 1.5 1 1 — HSB285S 2 5 — — 0.15 0.1 0.3typ 0.5 1 — HSB88AS 10 15 — — 0.42 1 0.8 0 1 231 HSB88WA 10 15 — — 0.42 1 0.8 0 1 231
CMPAK
HSB88WK 10 15 — — 0.42 1 0.8 0 1 231 HSB226YP [25] [50] — — 0.33 1 2.8 1 1 — HSB276AYP [5] 30 35 0.5 — — 0.85 0.5 1 —
CMPAK-4
HSB88YP 10 15 — — 0.42 1 0.8 0 1 231 HSC226 [25] [50] — — 0.33 1 2.8 1 1 233 HSC276 3 30 35 0.5 — — 0.85 0.5 1 235 HSC276A [5] 30 35 0.5 — — 0.85 0.5 1 237 HSC278 30 30 — — 0.3 1 1.5 1 1 239 HSC285 2 5 — — 0.15 0.1 0.3typ 0.5 1 241 HSC88 10 15 — — 0.42 1 0.8 0 1 243
UFP
RKD700KJ 30 50 — — 0.43 10 2.8 1 1 245 HSD226 [25] [50] — — 0.33 1 2.8 1 1 233 HSD276A [5] 30 35 0.5 — — 0.85 0.5 1 237 HSD278 30 30 — — 0.3 1 1.5 1 1 239 HSD88 10 15 — — 0.42 1 0.8 0 1 243
SFP
RKD700KK 30 50 — — 0.43 10 2.8 1 1 245 HSL226 [25] [50] — — 0.33 1 2.80 1 1 233 HSL276A 3 30 35 0.5 — — 0.85 0.5 1 — HSL278 30 30 — — 0.30 1 1.50 1 1 — HSL285 2 5 — — 0.15 0.1 0.3typ 0.5 1 241 RKD700KL 30 50 — — 0.43 10 2.8 1 1 245 RKD702KL [30] [50] — — 0.35 1 2.50 1 1 247
EFP
RKD703KL [30] [50] — — 0.35 20 5 1 1 249 HSM198S 10 30 4.5 1.0 1.1 5 1.5 1 1 — HSM226S [25] [50] — — 0.33 1 2.8 1 1 — HSM276AS [5] 30 35 0.5 — — 0.9 0.5 1 253 HSM276ASR [5] 30 35 0.5 — — 0.9 0.5 1 253 HSM276S 3 30 35 0.5 — — 0.9 0.5 1 255 HSM276SR 3 30 35 0.5 — — 0.9 0.5 1 255 HSM88AS 10 15 — — 0.42 1 0.85 0 1 257 HSM88ASR 10 15 — — 0.42 1 0.85 0 1 257 HSM88WA 10 15 — — 0.42 1 0.85 0 1 257
MPAK
HSM88WK 10 15 — — 0.42 1 0.85 0 1 257 HSU226 [25] [50] — — 0.33 1 2.80 1 1 233 HSU227 [25] 50 — — 0.35 1 3.0 1 1 — HSU276 3 30 35 0.5 — — 0.85 0.5 1 235 HSU276A [5] 30 35 0.5 — — 0.85 0.5 1 237 HSU285 2 5 — — 0.15 0.1 0.3typ 0.5 1 241
URP
HSU88 10 15 — — 0.42 1 0.8 0 1 243 RKD702KP [30] [50] — — 0.35 1 2.50 1 1 247 RKD703KP [30] [50] — — 0.35 20 5 1 1 249 RKD750KP 2 5 — — 0.15 0.1 0.3typ 0.5 1 241
Detector and mixer
MP6
RKD751KP 3 30 35 0.5 — — 1.0 0.5 1 251
Lineup
10
Schottky Barrier Diodes for High Speed Switching Ratings Characteristics
Application Package Part No.
ElementsS: SingleD: Double
VRRM (V)
IO [IF] (A)
VF (V)
max. IF
(A)
IR (μA) max.
VR (V) Page
HRB0103A S 30 0.1 0.44 0.1 50 30 259 HRB0103B D 30 0.1 0.44 0.1 50 30 262 V HRB0502A S 20 [0.5] 0.40 0.5 200 20 265
CMPAK
V RKR0202AQE D 20 0.2 0.40 0.1 50 20 268 CMPAK-4 HSB0104YP D 40 [0.1] 0.58 0.1 50 40 271
HRC0103A S 30 0.1 0.44 0.1 50 30 273 HRC0103C S 30 0.1 0.60 0.1 0.1 5 276 V HRC0201A S 15 0.2 0.39 0.2 50 6 279 HRC0203B S 30 0.2 0.52 0.2 10 30 282 HRC0203C S 30 0.2 0.45 0.2 30 10 285 RKR0303AKJ S 30 [300] 0.42 0.3 200 30 288
UFP
RKR0303BKJ S 30 [300] 0.5 0.3 50 30 291 HRD0103C S 30 0.1 0.60 0.1 0.1 5 294 SFP HRD0203C S 30 0.2 0.45 0.2 30 10 297
EFP HRL0103C S 30 0.1 0.60 0.1 0.1 5 300 V HRW0202A D 20 0.2 0.40 0.1 50 20 303 V HRW0202B D 20 0.2 0.42 0.1 10 20 306 HRW0203A S 30 0.2 0.50 0.2 50 30 309 HRW0203B S 30 0.2 0.50 0.2 50 30 312 V HRW0302A S 20 0.3 0.40 0.3 100 20 315 V HRW0502A S 20 0.5 0.40 0.5 200 20 318 HRW0503A S 30 0.5 0.55 0.5 50 30 321 HRW0702A S 20 [0.7] 0.43 0.7 200 20 324
MPAK
HRW0703A S 30 [0.7] 0.50 0.7 100 30 327 HRU0103A S 30 0.1 0.44 0.1 50 30 330 HRU0103C S 30 0.1 0.60 0.1 0.1 5 294 HRU0203A S 30 0.2 0.50 0.2 50 30 333
URP
HRU0302A S 20 0.3 0.40 0.3 100 20 336 V HRV103A S 30 1 0.36 0.7 1000 30 339 HRV103B S 30 1 0.45 0.7 100 30 342 RKR0503AKH S 30 0.5 0.37 0.5 500 30 345 RKR0503BKH S 30 0.5 0.44 0.5 100 30 348 V RKR0505AKH S 50 0.5 0.46 0.5 400 20 351 RKR0505BKH S 50 0.5 0.60 0.5 40 30 354 RKR0703BKH S 30 0.7 0.55 0.7 50 30 357
High speed switching
TURP
RKR104BKH S 40 1 0.55 0.7 50 40 360
Note: V: Low-forward-voltage products
Diodes for System Protection Ratings Characteristics
Application Package Part No.
VR [VRRM]
(V) IO
(mA) IFSM (A)
VF (V)
max. IF
(mA)
IR (μA) max.
VR (V) Page
HSM107S 8 50 0.5 0.3 10 30 5 363 System protection
MPAK HSM126S [20] 200 2 0.35 10 2 5 365
Lineup
11
Zener Diodes for Surge Absorption Ratings Characteristics
Application Package Part No.
Pd (mW)
VZ (V) IZ (mA)
C (pF) max. VR (V)
ESD (kV)min. Page
RKZ6.2B2KP 100 5.86 to 6.53 5 — — 30 367 RKZ6.8B2KP 100 6.47 to 7.14 5 — — 30 367
MP6
RKZ8.2B2KP 100 7.76 to 8.64 5 — — 30 367 * HZL6.2Z4 100 5.9 to 6.5 5 4.0 0 8 369 EFP * HZL6.8Z4 100 6.47 to 7.0 5 4.0 0 8 371 * HZD6.2Z4 150 5.90 to 6.50 5 4.0 0 8 373 SFP * HZD6.8Z4 150 6.47 to 7.00 5 4.0 0 8 375
UFP HZC Series 150 1.90 to 38.00 2 to 5 — — 20 to 30 — * HZU5.6Z 200 5.31 to 5.92 5 8.5 0 8 — * HZU6.2Z 200 5.9 to 6.5 5 8.5 0 — 377 HZU6.8Z 200 6.47 to 7.0 5 25 0 20 380
URP
HZU-G Series 200 4.84 to 13.96 5 — — 30 — HZM3.3WA 200 3.10 to 3.50 5 — — 30 — * HZM6.2ZMWA 200 5.9 to 6.5 5 8.5 0 13 383 * HZM6.2Z4MWA 200 5.9 to 6.5 5 (4) 0 8 386 HZM6.8ZMWA 200 6.47 to 7.0 5 25 0 20 388 * HZM6.8Z4MWA 200 6.47 to 7.0 5 (4) 0 8 391 HZM6.8MWA 200 6.47 to 7.0 5 130 0 30 393
MPAK
HZM27WA 200 25.1 to 28.9 2 (27) 0 30 395 * HZM5.6ZFA 200 5.31 to 5.92 5 8.5 0 8 — * HZM6.2ZMFA 200 5.9 to 6.5 5 8.5 0 13 398 * HZM6.2Z4MFA 200 5.9 to 6.5 5 (4) 0 8 401 HZM6.8MFA 200 6.47 to 7.0 5 130 0 30 403 HZM6.8ZMFA 200 6.47 to 7.0 5 25 0 25 405 * HZM6.8Z4MFA 200 6.47 to 7.0 5 (4) 0 8 408
MPAK-5
HZM27FA 200 25.1 to 28.9 2 (27) 0 30 410 CMPAK HZB6.8MWA 200 6.47 to 7.0 5 130 0 30 —
RKZ6.2Z4MFAKT 150 5.90 to 6.50 5 (4.0)/ 4.5 0 8 412 RKZ6.8ZMFAKT 150 6.47 to 7.0 5 25 0 25 414
Surge absorption
VSON-5
RKZ6.8Z4MFAKT 150 6.47 to 7.0 5 (4.0)/ 4.5 0 8 417 SFP RKZ6.8TKK 150 5.80 to 7.80 5 — — 25 419 UFP RKZ6.8TKJ 150 5.80 to 7.80 5 — — 25 419 URP RKZ27TKG 200 26.2 to 31.5 1 30 0 30 421
Bidirectional Surge absorption
CMPAK RKZ27TWAQE 200 26.2 to 31.5 1 30 0 30 423
Note: *: Low capacitance version
Zener Diodes for Stabilized Power Supply Ratings Characteristics
Application Package Part No. Pd (mW) VZ (V) IZ (mA) Page
DO-35 HZ Series 500 1.6 to 38.0 5 to 2 425 HZS Series 400 1.6 to 38.0 5 to 2 430 MHD HZS-N Series 400 1.88 to 38.52 5 —
LLD HZK Series 500 1.9 to 38.0 5 to 2 435 MPAK HZM-N Series 200 1.9 to 38.0 5 to 2 —
HZU Series 200 1.9 to 38.0 5 to 2 439 URP RKZ-KG Series 200 1.9 to 38.0 5 to 2 444
UFP RKZ-KJ Series 150 1.9 to 38.0 5 to 2 449 SFP RKZ-KK Series 150 1.9 to 38.0 5 to 2 454
General
EFP RKZ-KL Series 100 1.9 to 38.0 5 to 2 458 HZ-L Series 400 5.2 to 38.0 0.5 462 DO-35 HZ-LL Series 250 1.6 to 5.3 0.5 466 HZS-L Series 400 5.2 to 38.0 0.5 468 MHD HZS-LL Series 250 1.6 to 5.3 0.5 472 HZK-L Series 400 5.2 to 38.0 0.5 475 LLD HZK-LL Series 250 1.6 to 5.3 0.5 479 HZU-L Series 150 5.2 to 14.3 0.5 482
Low noise
URP HZU-LL Series 150 1.6 to 5.3 0.5 486
12
Standard Package Dimensions
HE
L
φD
1.25 1.35 1.45φD
3.30 3.50 3.60
- 0.35 -L
HE
Dimension in Millimeters
Min Nom Max
Reference
Symbol
⎯ 0.027g
MASS[Typ.]
LLD / LLDVGLZZ0002ZA-A
RENESAS CodeJEITA Package Code Previous CodePackage Name
LLD
L E L
Min Nom Max
φb - 0.4
φD - 2.0
E - - 2.4
L 26.0 - -
-
-
φb
φD
Dimension in MillimetersReference
Symbol
⎯ 0.084g
MASS[Typ.]
MHD / MHDVGRZZ0002ZC-A
RENESAS CodeJEITA Package Code Previous CodePackage Name
MHD
Standard Package Dimensions
13
L E L
Min Nom Max
φb - 0.5
φD - 2.0
E - - 4.2
L 26.0 - -
-
-
φbφD
Dimension in MillimetersReference
Symbol
SC-40 0.13g
MASS[Typ.]
DO-35 / DO-35VGRZZ0002ZB-A
RENESAS CodeJEITA Package Code Previous CodePackage Name
DO-35
A
c
E HE
D
b
e1b
Pattern of terminal position areas
φ
A
b
c
D
E
HE
e1
0.25
0.44
0.08
0.55
0.75
0.95
0.30
0.47
0.13
0.60
0.40
1.00
0.80
1.00
0.50
0.35
0.18
0.65
0.85
1.05
Dimension in MillimetersReference
Symbol Min Nom Max
bφ
⎯ 0.0007g
MASS[Typ.]
EFP / EFPVPXSF0002ZA-A
RENESAS CodeJEITA Package Code Previous CodePackage Name
EFP
Standard Package Dimensions
14
⎯ 0.0010g
MASS[Typ.]
SFP / SFPVPUSF0002ZB-A
RENESAS CodeJEITA Package Code Previous Code
A
c
E HE
D
b
e1b
Pattern of terminal position areas
φ
A
b
c
D
E
HE
e1
0.25
0.50
0.08
0.55
0.90
1.30
0.30
0.13
0.60
0.50
1.40
1.00
1.40
0.55
0.35
0.18
0.65
1.10
1.50
Dimension in MillimetersReference
Symbol Min Nom Max
bφ
Package Name
SFP
A
c
E HE
D
b
e1
l1
l1
Pattern of terminal position areas
b2
A
b
c
D
E
HE
b2
e1
l1
0.25
0.50
0.08 0.13
0.70
1.10
1.50
0.30
0.60
0.80
0.80
1.70
1.20
1.60
0.60
0.70
0.35
0.18
0.90
1.30
1.70
Dimension in MillimetersReference
Symbol Min Nom Max
SC-79 0.0016g
MASS[Typ.]
UFP / UFPVPWSF0002ZA-A
RENESAS CodeJEITA Package Code Previous CodePackage Name
UFP
Standard Package Dimensions
15
b
D
E HE
A1
A2
b2
l1
l1
e1
Pattern of terminal position areas
0 - 0.1A1
0.75 0.90 1.05A2
0.15 0.30 0.45
1.10 1.25 1.40
b
1.55 1.70 1.85
2.35 2.65
- 0.80
2.50
-
- 2.30 -
D
- 0.80 -
E
HE
b2
e1
l1
Dimension in Millimeters
Min Nom Max
Reference
Symbol
SC-76A 0.004g
MASS[Typ.]
URP / URPVPTSP0002ZA-A
RENESAS CodeJEITA Package Code Previous CodePackage Name
URP
A
b
c
D
E
HE
Lp2
e1
0.55
0.08
1.15
1.80
2.40
0.60
1.25
1.40
1.90
2.50
0.55
0.65
0.18
1.45
2.00
2.60
1.30 1.50
Lp1 0.500.40 0.60
Dimension in MillimetersReference
Symbol Min Nom Max
b3
b2
l2
l1
0.5
0.8
0.8
1.1
2.0
b1 0.75 0.80
0.13
0.85
⎯ 0.004g
MASS[Typ.]
TURP/TURPVPUSF0002ZC-A
RENESAS CodeJEITA Package Code Previous CodePackage Name
TURP
A
c
E HE
D
b
b1
l1
l2
Pattern of terminal position areas
b3
b2
e1
Lp1
Lp2
b
b1
Standard Package Dimensions
16
Pattern of terminal position areas
e
e1
l1
b2
D
A A
b
E HE
e
A2 A
A1
Q
c
L
A 0.8 - 1.1
A1 0 - 0.1
A2 0.8 0.9 1.0
b 0.25 0.3 0.4
c 0.1 0.16 0.26
D 1.8 2.0 2.2
E 1.15 1.25 1.35
- 0.65 -e
HE 1.8 2.1 2.4
L 0.425- -
b2 - - 0.45
- 1.5 -e1
l1 - - 0.9
Q - 0.2 -
Dimension in Millimeters
Min Nom Max
Reference
Symbol
SC-70 0.006g
MASS[Typ.]
CMPAK / CMPAKVPTSP0003ZB-A
RENESAS CodeJEITA Package Code Previous Code
b
c
A — A Section
Package Name
CMPAK
e
e1
l1
b2
D
A A
b
E HE
e
A
A1
Q
c
L
e
Pattern of terminal position areas
A 0.8 0.9 1.0
A1 0 - 0.1
b 0.25 0.3 0.35
c 0.1 0.16 0.26
D 1.8 2.0 2.2
E 1.15 1.25 1.35
-
- -
0.65 -e
HE 1.9 2.1 2.3
L 0.425
b2 - - 0.45
- 1.5 -e1
l1 - - 0.9
Q - 0.2 -
Dimension in Millimeters
Min Nom Max
Reference
Symbol
SC-82 0.006g
MASS[Typ.]
CMPAK-4(D) / CMPAK-4(D)VPTSP0004ZB-A
RENESAS CodeJEITA Package Code Previous Code
b
c
A — A Section
Package Name
CMPAK-4
Standard Package Dimensions
17
Pattern of terminal position areas
e
e1
l1
b2
b
c
A — A Section
D
A A
b
E HE
e
A
A1
Q c
L
A 1.0 - 1.3
A1 0 - 0.1
b 0.35 0.4 0.5
c 0.1 0.16 0.26
D 2.7 - 3.1
E 1.35 1.5 1.65
- 0.95 -
- -
e
HE 2.2 2.8 3.0
L 0.65
b2 - - 0.55
- 1.95 -e1
l1 - - 1.05
Q - 0.3 -
Dimension in Millimeters
Min Nom Max
Reference
Symbol
SC-59A 0.011g
MASS[Typ.]
MPAK(D) / MPAK(D)VPLSP0003ZC-A
RENESAS CodeJEITA Package Code Previous CodePackage Name
MPAK
c
LL1
A2 A
A1
Pattern of terminal position areas
e
e1
l1
b2
D
A A
b
E HE
e
A 1.0 - 1.4
A1 0 - 0.1
A2 1.0 1.1 1.3
b 0.3 0.4 0.5
c 0.11 0.16 0.26
D 2.7 2.9 3.1
E 1.5 1.6 1.8
- 0.95 -e
HE 2.5 2.8 3.0
L - 0.6
L1 0.15 -
-
-
b2 - - 0.55
- 2.15 -e1
l1 - - 0.85
Dimension in Millimeters
Min Nom Max
Reference
Symbol
SC-74A 0.013g
MASS[Typ.]
MPAK-5 / MPAK-5VPLSP0005ZC-A
RENESAS CodeJEITA Package Code Previous Code
b
c
A — A Section
Package Name
MPAK-5
Standard Package Dimensions
18
L
e
e1
l1
b2
l1
A2 A
A1
D
b
E HE
e
(0.45)
Pattern of terminal position areas
A 1.0 - 1.3
A1 0 - 0.1
A2 - 1.1 -
- 0.4 -b
- 4.71 -
- 1.5 -
- 1.27 -
- -
D
2.2 2.8 3.0
E
0.65
e
HE
L
- 0.8 -
- 2.6 -
- 1.0 -
b2
e1
l1
Dimension in Millimeters
Min Nom Max
Reference
Symbol
⎯ 0.020g
MASS[Typ.]
MOP / MOPVPTSP0008DB-A
RENESAS CodeJEITA Package Code Previous CodePackage Name
MOP
A1
0.44
0
0.47 0.50
- 0.05
A2
0.13 0.18 0.23
0.10 0.13 0.16
b
c
2.70
1.10 1.20 1.30
D
E
- 0.43 -e
- 0.28 -
- 1.1 -
- 0.25 -
b2
e1
l1
Dimension in Millimeters
Min Nom Max
Reference
Symbol
0.23Lp
0.05 0.15
0.18 0.28
1.30 1.40 1.50
2.60 2.80
0.10
HE
L
⎯ 0.004g
MASS[Typ.]
MFP12VPUSF0012ZA-A
RENESAS CodeJEITA Package Code Previous CodePackage Name
MFP12
e
l1b2
A2
A1
D
b
EHE
e
e
e1
Pattern of terminal position areas
L
c
Lp
Standard Package Dimensions
19
Min Nom Max
b 0.25 0.27
D 0.29 0.32
E 0.59 0.62 0.65
L 0.17 0.19 0.21
0.35
0.29
A 0.27 0.30 0.33
Dimension in MillimetersReference
Symbol
⎯ 0.00015g
MASS[Typ.]
MP6VPXSN0002ZB-A
RENESAS CodeJEITA Package Code Previous CodePackage Name
MP6
D
b
E
L
L
A
b1 0.31
e1 0.38
l10.23
Pattern of terminal position areas
e1
b1
l1
l1
⎯ 0.0008 g
MASS[Typ.]
MP6-8VPXSN0008ZA-A
RENESAS CodeJEITA Package Code Previous CodePackage Name
MP6-8
A
e1
Ll1
E
be
Pattern of terminal position areas
e2
D
b1
e3
Dimension in MillimetersReference
Symbol Min
0.17
0.64
1.60
0.27
0.25
Max
1.66
0.70
— —
— —
— —
— —
— —
— —
0.21
0.33
0.29b
D
E
L
A
l1
b1
e2
e
e3
e1
Nom
0.19
0.67
1.63
0.30
0.27
0.19
0.42
0.27
0.42
0.38
0.38
Standard Package Dimensions
20
e
b
EHE
D
c
L
e e
e1
l1
b2
A
A
b
c
D
E
e
HE
L
b2
e1
l1
0.07
1.55
1.1
1.55 1.6
0.12
1.6
1.2
0.5
0.2
0.3
1.35
0.45
0.60
0.3
0.22
0.50 0.55
0.15 0.2
1.65
1.3
1.65
Dimension in MillimetersReference
Symbol Min Nom Max
Pattern of terminal position areas
⎯ 0.002g
MASS[Typ.]
VSON-5VPUSN0005KB-A
RENESAS CodeJEITA Package Code Previous CodePackage Name
VSON-5
21
Nomenclature of Renesas Diodes
1. Diode Nomenclature
1.1 Basic Principles of Setting the Type Number (1) Naming of silicon diodes is based on JEITA (EIAJ-ED-4001). Such devices are registered with the Japan
Electronics and Information Technology Industries Association (JEITA) and named by the JEITA. (2) Basic configuration
Grade (1-2 letters)
• Same product type or characteristics
division with A, B, A1, B1, C1 etc.,
affixed.
Example: 1SS270ATD-E-Q
Reliability
• (H) means "Special manufactured for the communications industry".
(K) means "Special manufactured for the industry".
This item is omitted with other general products.
Characteristic number (serial number)
• Affixed in order of registration (11 or more digits)
Product
• See 1.2 (2)
Silicon device indicated by letter "S"
Lead-free specification
Overseas sales product
Packing specification (2-3 letters)
1.2 Exceptions to Diode Type Number Nomenclature (Originally Devised by former Hitachi Diode)
When inconsistencies occur in the general principles for setting the type number as described in 1.1, use the following configuration originally devised by former Hitachi diode.
(1) Basic configuration
Example: HSM88WATL-E-Q
Grade
Series name
Packing specification
Application
• See 1.2 (2)
Reliability
• See 1.1 (2)
Package
• See 1.2 (3)
Serial number
• Serial numbers are from 1 to 4 digits in length.
Pin connection
• See 1.2 (4)
Lead-free specification
Overseas sales product
Nomenclature of Renesas Diodes
22
(2) System of letters to indicate application Insert one of the letters shown in the table below to indicate application (product classification).
Letter Indicating Application
Application (product classification)
Letter IndicatingApplication
Application (product classification)
S Signal diode R High speed switching diode V Variable capacitance diode,
PIN diode Z Zener diode
(3) System of letters to indicate outline
One of the letters in the table below is used to indicate the outline (package) of the device. Letter Indicating
Outline Outline (package) Letter Indicating
Outline Outline (package) B CMPAK, CMPAK-4 L EFP C UFP, a part of CMPAK M MPAK, MPAK-5 D SFP S MHD G DO-35 U URP K LLD W MPAK for high speed switching
Note: 1. The letter “G” (DO-35) may be omitted except when it is particularly necessary to differentiate from other packages (e.g., HZ6A1)
(4) System of indication to pin connection
When several Diodes are molded in 1 package, indicate inside connection as follows according to the connection state in principle.
Pin Connection Type Pin Connection
Circuit Pin Connection Type Pin Connection
Circuit Series S
Cathode common WK
Series reverse SR
4 devices Anode common
FA
Anode common WA
Bidirectional Zener Diode
4 pins Parallel
YP
Nomenclature of Renesas Diodes
23
2. Nomenclature for High Speed Switching Diodes
2.1 System for Indicating Current Current is taken as the maximum rating of average rectified current (IO) or forward current (IF). This specification covers rectifiers with an IO or IF value of ≥ 100 mA. As a rule, the indicator for current value in the type number is two columns as shown in the example below. However, with devices of more than 1 A or more (e.g., a product with an IO or IF of 1.2 which is not an integer) the number after the decimal point is discarded, and products with an IO or IF measured in 10 mA units have the 10 mA units dropped.
Example: Average forward current IO (or IF) Current indicator 1 A 1 20 A 20 0.1 A 01 1.2 A 1
2.2 System for Indicating Dielectric Resistance Division Dielectric resistance is taken as the maximum rating of VRRM (Note). As a rule, two letters are used for products with a VRRM in 10 s and 100 s. Where the VRRM is up to the 1 unit (e.g., 35 V) the ones unit is dropped.
Example: Dielectric Dielectric resistance VRRM resistance indicator 10 V 01 20 V 02 35 V 03 100 V 10 800 V 80
Note: May also be indicated as VRM or VR (peak).
2.3 Letters Indicating Product Division With the above systems of classification (2.1 and 2.2) alone, products with different external forms etc., cannot be differentiated from others with the same current and voltage ratings. So another classifier is added after the voltage division containing letters in sequence (I and O are not used).
(1) Basic configuration
Example: HRW0503ATR
Packing specification
Series name
Application
• R: High speed switching diode
Package
• See 1.2 (3)
Average rectified current
• See 2.1
Product division
• See 2.3
Voltage division
• See 2.2
Nomenclature of Renesas Diodes
24
3. Renesas Type Number Nomenclature (1) Basic configuration
Example: RKV500KJR1Q
Package code
• See 3.(4)
Quality level (omissible)
Serial number (A pin arrangement symbol etc. is included.)
• It determines with each family and
a consecutive number is defined
in order of registration.
• See 3.(3)
Product family
• See 3.(2)
Product division
• K: Diode
RENESAS
Inside code
• Packing specification
(Refer to 2.2 (4) of "Standard Taping
Specifications" (REJ27G0009))
Overseas sales product
Lead-free code
(2) The symbol showing a product family.
Symbol Family V VC (Tuner, VCO) P PIN (Attenuator, Antenna switch) S SW (Switching, high frequency Switching) D SS_SB R PR_SB (It is based on Rectifier current value and Voltage withstanding value.) Z ZN (It is based on VZ value.)
(3) Unique number Number (serial) Family Number (serial) Family
100 to 149 Switching 400 to 499 Multi pin package products 150 to 199 high frequency Switching 500 to 599 Variable capacitance (Tuner) 200 to 299 PIN (Antenna switch) 600 to 699 Variable capacitance (VCO) 300 to 399 PIN (Attenuator) 700 to 799 Small signal schottky
(4) System of letters to indicate outline
Letter Indicating
Outline Outline (package)
Letter Indicating
Outline Outline (package)
Letter Indicating
Outline Outline (package)KA DO-35 KK SFP QA MPAK KC MHD KL EFP QC MPAK5 KD LLD KP MP6 QE CMPAK KG URP KT VSON-5 QF CMPAK4 KH TURP KS MFP12 WA to WF Wafer shipment 1 to 6KJ UFP KE MAP series WT to WR Chip shipment 1 to 6
25
Renesas Diode Symbols and Their Definitions
Renesas uses many symbols drawn from the maximum ratings and electrical characteristics tables for the convenience of users and circuit designers who need to know the performance of particular kinds of product. The specific meanings of these symbols are given in more specialist technical literature, but for convenience of readers of diode data sheet, the meanings have been simplified.
1. General Principles Relating to the Symbols Capital letters used for the symbol and suffix indicate DC characteristics. AC and small signal characteristics are denoted by lower case letters.
Note that although permissible power (Pd) is not a DC characteristic, it does contain a capital letter in part.
The use of suffixes is described below. There are some exceptions and conventional usages which depart from the principles.
Table 1 Example of a Symbol Display
Symbol First Item Definition T opr R th P d
The first item provides a supplementary explanation of the symbol.
I F
V R
The first item indicates the direction of transmission.
The first item is classified in the following two ways.
a. To provide a supplementary explanation of the contents indicated by the symbol. (In this case, the first item sometimes has three letters or more).
b. To indicate the direction of transmission. F: Forward transmission R: Reverse transmission
2. Symbols for Maximum Ratings With semiconductor products, the maximum ratings are usually defined in terms of the “absolute maximum ratings”. The strictest care must be taken to assure that the values given in the maximum ratings table for each type are never exceeded, even for an instant. Even momentary excess of these maximum ratings can lead to immediate deterioration or destruction of the device concerned. Even if the device operates for a while after the excess, it must be assumed that the operation life has been shortened considerably.
In designing electronic circuits with semiconductor devices, the first step to circuit design is to make sure that their maximum ratings are never exceeded, no matter what electrical fluctuations due to external conditions may occur.
For example, even though the current and voltage applied to a particular diode may be within the maximum ratings, the power consumption is given by the product of current and voltage and must be within the range of permissible dissipation for the particular type. Furthermore, this permissible dissipation will decrease as the service temperature is rises, and the service range will be reduced accordingly.
The following table gives brief definitions of the various items of maximum ratings prescribed for the different devices covered by diode data sheet.
Renesas Diode Symbols and Their Definitions
26
Table 2 Diode Maximum Ratings
Term Symbol Definition Repetitive peak reverse voltage
VRRM Maximum allowable instantaneous value of reverse voltage repeatedly applicable.
Non-repetitive peak reverse surge voltage
VRSM Maximum allowable instantaneous value of reverse surge voltage without repetition.
Peak reverse voltage VRM [VR(peak)] Maximum allowable instantaneous value of reverse voltage that can be applied.
Reverse voltage VR Maximum allowable value of reverse voltage. Repetitive peak forward current
IFRM Maximum allowable instantaneous value of forward current repeatedly applicable.
Non-repetitive peak forward surge current
IFSM [IF(peak)] Maximum allowable surge value of forward current without repetition.
Peak forward current IFM [IF(peak)] Maximum allowable instantaneous value of forward current. Forward current IF Maximum allowable value of forward current. Average rectified current
IO Maximum allowable continuous average current in the forward direction under specified conditions.
Thermal resistance Rth Rth(j-a), [Rth(j-c)]
Under thermally steady state while the device is energized, the value of the temperature difference between the junction and ambient air or between the junction and case per unit power dissipation at the junction.
Power dissipation Pd Maximum value of power dissipation repeatedly consumable in diode under specified conditions.
Junction temperature Tj Temperature at the junction which is determined as the basis of the rating and indicated by the allowable range of temperature in device operation.
Storage temperature Tstg Range of allowable temperature for storage of the device. Operating ambient temperature
Topr Limit value of the ambient temperature at which operation is possible under the prescribed heating conditions.
Lead temperature Tl Upper limit value of lead temperature.
Renesas Diode Symbols and Their Definitions
27
3. Symbol of Electrical Characteristics Table 3 Electrical Characteristics of Switching Diodes
Term Symbol Definition Reverse voltage VR Voltage value when the specified reverse current (IR) is flowing. Forward voltage VF Voltage value when the specified forward current (IF) is flowing. Reverse current IR Current value when the specified reverse voltage (VR) is applied.Forward current IF Current value when the specified forward voltage (VF) is applied.Capacitance C Terminal capacitance when the specified reverse voltage (VR)
and frequency (f) are applied. Rectifier efficiency η Under specified conditions, the ratio of DC output power voltage
(revealed in load after rectification) to AC input power voltage. Forward resistance rf Resistance value when specified forward current and frequency
are applied. Forward temperature coefficient
ΔVF /ΔTa Ratio of forward voltage change to ambient temperature change.
Reverse recovery time trr Time taken for the reverse current (IR) to reach the specified level (Irr) when the reverse voltage (VR) is applied while the device is conducting in the forward direction. When without a rule of (Irr), assumed with 0.1 IR.
Table 4 Electrical Characteristics of Switching Diodes
Term Symbol Definition Zener voltage VZ Voltage value when the specified reverse current (IZ) is flowing. Zener current IZ Standard current for measuring Zener voltage. Dynamic resistance ZZ, rd, ZZT, ZZk Ratio of small change in Zener voltage to small change in Zener
current. Temperature coefficient γZ Ratio of Zener voltage change to ambient temperature change. Table 5 Electrical Characteristics of Variable Capacitance Diodes
Term Symbol Definition Matching error ΔC/C Percentage of capacitance variation among group of devices
under specified conditions. ΔC/C = (Cmax – Cmin) ÷ Cmin × 100%
Capacitance ratio n Ratio of capacitance with specified differences in voltage. Series resistance rs Series resistance value when specified reverse voltage and
frequency are applied. Performance index Q High frequency characteristics performance indicated by series
resistance capacitance value when specified reverse voltage and frequency are applied. Q = 1/(2πf·rS·C)
Renesas Diode Symbols and Their Definitions
28
4. Indicator of Units and Mathematical Power Units for maximum ratings and characteristics are as follows.
a. Unit indicators method *1 Types of Quantity Symbol Unit Abbreviations Reading
Current I, i A ampere Voltage V, v V volt Power P W watt Resistance R, r Ω ohm Static capacitance C F farad Inductance L H henry Admittance y S siemens Conductance g S siemens Susceptance b S siemens Gain, attenuation — dB decibel Time t s second Frequency f Hz hertz Angle (φ) ° degrees Temperature T °C degrees Length (l) m meter Efficiency η % percent Note: 1. All of the units shown here are to be applied to the power product of 100. When indicating the
power product in connection with time t (s) or frequency f (Hz), the following indicators should be used: t (μs), f (kHz), etc.
b. Unit indicators method *1
Power Abbreviation Prefix 109 G giga 106 M mega 103 k kilo 100 — — 10–3 m milli 10–6 μ micro 10–9 n nano 10–12 p pico 10–15 f femto
Note: 1. Currently, the powers 109 to 10–15 are used for semiconductor devices. However, it does not follow that all of the powers are used for different quantities; 10–3 (m) and 10–9 (n) are not customarily used for static capacitance.
29
Reliability of Renesas Diodes
1. Diode Reliability
1.1 About the Construction Diodes are classified according to whether they are sealed in glass or plastic, and different considerations are required for each as regards reliability design.
With the glass-sealed type (hermetic seal), the assurance of heat and mechanical strength is important, taking into account air-tightness and thermal expansion coefficient matching between components (pellet and lead wire studs and glass case in the case of DHD).
Table 1 shows representative devices classified by external shape. Check the classification of each with reference to the package.
The important criteria with the plastic-sealed type are the plastic material, pellet surface stabilizing technique (passivation specification), and the structural design of the package.
1.1.1 Features of the glass-sealed type (1) Superior air-tightness (moisture resistance), and high reliability. (2) Compact and lightweight for easy mounting. (3) Double heat sink construction for favorable heat radiation. (4) Possible to streamline set assembly due to ease of taping and lead forming. 1.1.2 Features of the plastic-sealed type The mini-mold (MPAK) diodes have the following features:
(1) Ideal for hybrid IC use as they are ultra-compact and can be surface mounted. (2) Plural pellets can be sealed in one package. (3) Optimal for high density surface mounting in ultra-compact devices.
1.2 Reliability Data Actual examples of diode reliability tests are given below.
(1) Failure criteria standards An example of the failure criteria standards for a diode is given in table 2.
(2) Diode reliability test data Operation life test results according to application are given in table 3, and environmental test results for each package are shown in table 4.
(3) Diode characteristics changes Reliability testing is not solely a question of finding failures. Other factors such as change in characteristics over time and characteristic distribution contribute to quality and reliability evaluation of a product. This data is also the basis for margin allowance in circuit design and other procedures during user system design. Table 5 shows examples of changes over time of the Zener voltage and reverse current in an operation life test for a Zener diode. Table 6 gives changes over time of reverse current in a high temperature reverse bias test for a variable capacitance diode.
(4) Percentage occurrence according to failure mode The percentage occurrence according to failure mode for glass-sealed diodes on the market is shown in figure 1, and for the plastic-sealed type in figure 2. Figures 1 and 2 reveal that more than 80% of failures are due to destruction. This evidence indicates that the failure rate could be reduced by considering how the devices are handled during use, and particularly through circuit designs that strictly adhere to the maximum ratings.
Reliability of Renesas Diodes
30
Table 1 Product Types According to Package
Type Package Representative Product Part No. MHD 1SS270, HZS series DO-35 1S2076, 1SS106, HZ series
Glass-sealed type
LLD HSK83, HZK series, HSK120 MP6 RKP200KP, RKV600KP, RKV652KP MP6-8 RKP450KE EFP HVL142A, HVL355C, RKV650KL, RKD700KL, HSL226 SFP HVD142A, HVD355B, RKP201KK, RKV500KK, RKD700KK UFP HVC355B, RKV500KJ, RKD700KJ, HSC226 TURP HRV103A, HRV103B URP HVU355B, HRU0302A, RKV500KG, HZU series MPAK-5 HZM6.8MFA, HZM27FA MPAK HSM88AS, HVM14S, HVM16, HZM-N series, HRW0202A CMPAK-4 HSB0104YP CMPAK HVB14S VSON-5 RKZ6.8Z4MFAKT
Plastic-sealed type
MFP12 RKP400KS, RKP401KS, RKP402KS
Reliability of Renesas Diodes
31
Others
1%
NVF
4% Hermetic leakage failure
4%
Foreign matter fault
6%
EOS or ESD
85%
2007
Statistics
Figure 1 Classification of Glass-Sealed Type Diodes on the Market According to Fault Mode
NVF
19%
EOS or ESD
81%
2007
Statistics
Figure 2 Classification of Plastic-Sealed Type Diodes on the Market According to Fault Mode
Reliability of Renesas Diodes
32
Table 2 Example of Failure Criteria for Diodes
Failure Criteria Standard *1 Item Lower Limit Upper Limit Unit Remarks
Reverse voltage L × 0.9 — V Reverse current — U × 2 A Forward voltage — U × 1.1 V Zener voltage change rate –2 +2 %
Electrical characteristics
Disconnection, short Disconnection,
semi-disconnetion,
short, semi-short
Includes high/low temperature failure
—
Hermetic leakage Major/minor leak — Applies to glass-sealed diodes
Appearance by limit sample — Corrosion/discoloration by limit sample — Solderability by limit sample —
Appearance, others
Marking by limit sample — Notes: 1. U: Initial standard maximum value
L: Initial standard minimum value Table 3 Operation Life Test Results (1)
Fast/High Voltage Switching RF Switching Zener Diode
No. Test Item Test Conditions Result*1
Failure rate*2 (1/h) Result*1
Failure rate*2 (1/h) Result*1
Failure rate*2 (1/h)
Continuous operation (1)
Associated standard: EIAJ-ED-4701 Ta=25 ±2°C, Pd max. Testing time: 1000 h
0/307 3.0×10–6 0/60 1.5×10–5 0/920 1×10–6 1
Continuous operation (2)
Associated standard: EIAJ-ED-4701 Ta=25 ±2°C, IO max. Testing time: 1000 h
0/307 3.0×10–6 0/60 1.5×10–5 — —
2 High temp. reverse bias
Associated standard: EIAJ-ED-4701 VR max., Ti max. Testing time: 1000 h
0/307 3.0×10–6
0/60 1.5×10–5 — — —
Notes: 1. No. of failure/No. of tests 2. Reliability standard 60%
Reliability of Renesas Diodes
33
Table 3 Operation Life Test Results (2)
High Speed Switching DiodeVariable Capacitance PIN
Diode
No. Test Item Test Conditions Result*1 Failure rate*2
(1/h) Result*1 Failure rate*2
(1/h) Continuous operation (1)
Associated standard: EIAJ-ED-4701 Ta=25 ±2°C, Pd max. Testing time: 1000 h
— — 0/60 1.5×10–5 1
Continuous operation (2)
Associated standard: EIAJ-ED-4701 Ta=25 ±2°C, IO max. Testing time: 1000 h
0/614 1.5×10–6 — —
2 High temp. reverse bias
Associated standard: EIAJ-ED-4701 VR max., Ti max. Testing time: 1000 h
0/307 3.0×10–6 0/120 7.6×10–6
Notes: 1. No. of failure/No. of tests 2. Reliability standard 60% Table 4 Environmental Test Results (1)
Package Glass
Insertion Type SMD (LLD)
No. Test Item Test Conditions Result*1Failure
rate*2 (1/h) Result*1 Failure
rate*2 (1/h)260°C10 s
0/304 — 0/304 — 1 Solder heat resistance
Associated standard: EIAJ-ED-4701 Solder temperature: (see right) Solder wetting time: (see right) Rosin type flux wetting: 5 to 10 s Wetting 1 to 1.5 mm from the body of the test piece. 2 to 2.5 mm in the case of DO-41. Entire body is wetted in the case of SMD.
350°C3 s
0/304 — — —
[cycle]10
0/152 — 0/152 — 2 Thermal shock
Associated standard: EIAJ-ED-4701 Low temperature: 0°C, 5 min High temperature: 100°C, 5 min Normal temperature: under 10 s No. of cycles: (see right)
50 0/152 — 0/152 —
3 Temp. cycling
Associated standard: EIAJ-ED-4701 Low temperature: Tstg min. 30 min High temperature: Tstg max. 30 min Normal temperature: 10 to 15 min No. of cycles: 10
0/2304 — 0/2304 —
4 Drop test Associated standard: EIAJ-ED-4701 Height: 75 cm Onto 3 cm thick maple board 3 times
0/2304 — — —
5 Vibration Associated standard: EIAJ-ED-4701 Variable frequency Acceleration: 200 m/s2 Frequency: 100 to 2000 Hz XYZ directions, each 4 times
0/152 — 0/152 —
6 Shock test Associated standard: EIAJ-ED-4701 Acceleration: 15000 m/s2 Pulse width: 0.5 ms XYZ directions, each 3 times
0/152 — 0/152 —
Notes: 1. No. of failure/No. of tests 2. Reliability standard 60%
Reliability of Renesas Diodes
34
Table 4 Environmental Test Results (1) (cont.)
Package Glass
Insertion Type SMD (LLD)
No. Test Item Test Conditions Result*1Failure
rate*2 (1/h) Result*1 Failure
rate*2 (1/h)Associated standard: EIAJ-ED-4701 (1) Tensile Load: JIS-C-5035 recommendation Hold time: 10 s
0/304 — — —
Associated standard: EIAJ-ED-4701 (2) Bending Load: JIS-C-5035 recommendation 90° bend, 2 times
0/304 — — —
7 Terminal strength
Associated standard: EIAJ-ED-4131 (3) Board bending Board support gap: 90 mm Extent of board bending: 2 mm
— — 0/304 —
8 Solvent resistance
Associated standard: EIAJ-ED-4131 Isopropyl alcohol Immersion time: 30 s
0/152 — 0/152 —
9 Salt spray Associated standard: EIAJ-ED-4701 Ta = 35°C, 5% saline atmosphere Test duration: 24 h
0/152 — 0/152 —
Associated standard: EIAJ-ED-4131 (1) Bending resistance Applied pressure: 10 N Pressure duration: 10 ±1 s
— — 0/304 — 10 Body strength
Associated standard: Renesas standard (2) Compression resistance Applied pressure: 5 N Pressure duration: 10 ±1 s Pressure applied along the diode body axis
— — 0/304 —
11 Air tightness Associated standard: EIAJ-ED-4701 Pressurized water immersion test Applied pressure: 5.07 × 105Pa Test duration: 2 h
0/2304 — 0/2304 —
12 Pressure cooker
Associated standard: EIAJ-ED-4701 Pressurized water immersion test Applied pressure: 2.03 × 105Pa Test duration: 40 h
— — — —
13 High temperature/ humidity storage
Associated standard: EIAJ-ED-4701 Ta = 65°C, 95% RH Test duration: 1000 h
0/920 1×10–6 0/920 1×10–6
14 High temperature/ humidity reverse bias
Associated standard: EIAJ-ED-4701 Ta = 85°C, 85% RH, VR max. Test duration: 1000 h
0/920 1×10–6 0/920 1×10–6
15 High temperature storage
Associated standard: EIAJ-ED-4701 Tstg max. Test duration: 1000 h
0/230 4×10–6 0/230 4×10–6
16 Low temperature storage
Associated standard: EIAJ-ED-4701 Tstg min. Test duration: 1000 h
0/230 4×10–6 0/230 4×10–6
Notes: 1. No. of failure/No. of tests 2. Reliability standard 60%
Reliability of Renesas Diodes
35
Table 4 Environmental Test Results (2)
Package Glass
Insertion Type SMD (LLD)
No. Test Item Test Conditions Result*1Failure
rate*2 (1/h) Result*1 Failure
rate*2 (1/h)1 Solder heat
resistance Associated standard: EIAJ-ED-4701 Solder temperature: 260°C Solder wetting time: 10 s Rosin type flux wetting: 5 to 10 s Entire body is wetted in the case of SMD.
0/180 — 0/88 —
Associated standard: EIAJ-ED-4701 Solder temperature: 235 ±5°C Solder wetting time: 5 ±0.5 s Rosin type flux wetting: 5 to 10 s Entire body is wetted in the case of SMD.
0/180 — 0/88 — 2 Solderability
Associated standard: EIAJ-ED-4701 Solder temperature: 230 ±5°C Solder wetting time: 5 ±0.5 s Rosin type flux wetting: 5 to 10 s Entire body is wetted in the case of SMD. Pretreatment: Leave in pure stream for 60 min.
0/180 — 0/88 —
[cycle]10
0/180 — 0/88 — 3 Thermal shock
Associated standard: EIAJ-ED-4701 Low temperature: 0°C, 5 min High temperature: 100°C, 5 min Normal temperature: under 10 s No. of cycles: (see right)
50 0/180 — 0/88 —
4 Temp. cycling
Associated standard: EIAJ-ED-4701 Low temperature: Tstg min. 30 min High temperature: Tstg max. 30 min Normal temperature: 10 to 15 min No. of cycles: 10
0/3068 — 0/1155 —
5 Drop test Associated standard: EIAJ-ED-4701 Height: 75 cm Onto 3cm thick maple board 3 times
0/3068 — 0/1844 —
6 Vibration Associated standard: EIAJ-ED-4701 (1) Variable frequency Acceleration: 200 m/s2 Frequency: 100 to 2000 Hz XYZ directions, each 4 times
0/60 — 0/60 —
7 Shock test Associated standard: EIAJ-ED-4701 Acceleration: 15000 m/s2 Pulse width: 0.5 ms XYZ directions, each 3 times
0/60 — 0/60 —
8 Terminal strength
Associated standard: EIAJ-ED-4701 (1) Tensile Load: JIS-C-5035 recommendation Hold time: 10 s
0/180 — 0/88 —
9 Solvent resistance
Associated standard: EIAJ-ED-4131 Isopropyl alcohol Immersion time: 30 s
0/60 — 0/60 —
Notes: 1. No. of failure/No. of tests 2. Reliability standard 60% 3. SMD1: MPAK, CMPAK 4. SMD2: URP, UFP, SFP
Reliability of Renesas Diodes
36
Table 4 Environmental Test Results (2) (cont.)
Package Glass
Insertion Type SMD (LLD)
No. Test Item Test Conditions Result*1Failure
rate*2 (1/h) Result*1 Failure
rate*2 (1/h)10 Salt spray Associated standard: EIAJ-ED-4701
Ta = 35°C, 5% saline atmosphere Test duration: 24 h
0/180 — 0/88 —
11 Pressure cooker
Associated standard: EIAJ-ED-4701 Pressurized water immersion test Applied pressure: 2.03 × 105Pa Test duration: 40 h
0/180 1.28×10–4 0/88 2.6×10–4
12 High temperature/ humidity storage
Associated standard: EIAJ-ED-4701 Ta = 65°C, 95% RH Test duration: 1000 h
0/1840 5×10–7 0/920 1×10–6
13 High temperature/ humidity reverse bias
Associated standard: EIAJ-ED-4701 Ta = 85°C, 85% RH, VR max. Test duration: 1000 h
0/1840 5×10–7 0/920 1×10–6
14 High temperature storage
Associated standard: EIAJ-ED-4701 Tstg max. Test duration: 1000 h
0/735 1.25×10–6 0/185 5×10–6
15 Low temperature storage
Associated standard: EIAJ-ED-4701 Tstg min. Test duration: 1000 h
0/735 1.25×10–6 0/185 5×10–6
Notes: 1. No. of failure/No. of tests 2. Reliability standard 60% 3. SMD1: MPAK, CMPAK 4. SMD2: URP, UFP, SFP
Reliability of Renesas Diodes
37
Table 5 Example of Change in Characteristics of a Zener Diode
Change in Characteristics Example Changes in VZ and IR Due to Zener Diode Operation
Life Test Part No. HZ7 Test conditions Ta = 25°C
Pd = 500 mW No. of test pieces 200 pieces Criteria for failure VZ = initial value ± 2%
IR = ≤ 2 μA Failure mechanism Surface deterioration Explanation of results: (1) VZ and IR both shift stably (2) VZ and IR are both within the initial values,
and nothing occurred to cause the failure criteria to be surpassed.
1.0
0.5
0
–0.5
–1.0
0 168 500 1000
Time (h)
Measuring condition :
Normal temperature
ΔVz
(%)
10
1.0
0.1
0.01
0.001
0 168 500 1000
Time (h)
Measuring condition :
Normal temperature
IR(μA)
VR = 3.5V
Table 6 Example of Change in Characteristics of a Variable Capacitance Diode
Change in Characteristics Example Changes in IR Due to High Temperature Reverse Bias
Test of Variable Capacitance Diode Part No. RKV500KJ Test conditions Ta = 85°C, RH = 85%
VR = 32 V (continuous)
No. of test pieces 60 pieces Criteria for failure IR = 20 nA
(VR = 32 V) Failure mechanism Surface deterioration Explanation of results: (1) Fluctuation in IR distribution is minimal, IR is
within initial standard, and nothing occurred to cause the failure criteria to be surpassed.
1.0
0.1
0 168 500 1000
Time (h)
Measuring condition :
Normal temperature
IR(nA)
0.01
VR = 32V
Reliability of Renesas Diodes
38
(5) Failure rate and derating Judging from the results of each reliability test, it is necessary to derate devices for heat stress due to ambient temperature, power dissipation etc., in order to assure operational reliability. Table 7 shows diode derating characteristics. It is advisable to use within the maximum ratings when using the devices.
Table 7 Diode Derating Characteristics
Derating Application Example of High-Speed Switching Diode Stress factor Pd, Ta Failure criteria Disconnection, short,
deterioration in characteristics
Failure mechanism
Front/back electrode and junction deterioration
Overview: The junction temperature was changes so as to accelerate the operation life test of the high-speed switching diode as much as possible. The acceleration coefficient was determined as in the graph on the right based on the relation between junction temperature and failure rate. Use of derating data When the failure rate at the prescribed Tj has been checked, the failure rate at arbitrary temperatures can be determined from the graph on the right. Example: When a glass-sealed type diode has a failure rate of 100 [FIT] occurring at Tj = 100°C, determine the failure rate at Tj = 50°C. From the graph on the right, the acceleration coefficients at 100°C and 50°C are 1800 and 18 to 25°C respectively. The failure rate at 50°C is 1/100 that of the rate at 100°C. Therefore, at 50°C, 100/100 = 1 [FIT] can be expected.
2.0 2.5 3.0 3.5
Junction temperature 1/Tj (×10−3°K−1
)
Acce
lera
tio
n c
oe
ffic
ien
t (m
ultip
lica
ton
fa
co
tr a
ga
inst
25°C
)
225 200 175 150 125 100 75 50 25 Tj (°C)
Plastic-sealed diode
Glass-sealed diode
106
105
102
104
103
10
1
39
Renesas Diode Manufacturing Process and Quality Control
Renesas makes every possible effort to maintain the quality of its diodes from manufacturing to shipment, and pays strict attention to quality control in the production process. Meticulous care over each of the manufacturing process enables timely detection of faults, and helps maintain stable quality control.
Figure 1 shows the manufacturing process, figure. 2 shows details of quality control for the glass-sealed type diode and figure 3, the plastic-sealed type diode.
In addition to inspection of all diodes, Renesas also carries out sampling inspections in accordance with the JIS Z 9015 standard, to provide a regular reliability assurance system.
Process
Materials, parts
Materials,parts
Materials and parts inspection
Manufacturing
Screening
100% inspection
Products
Productinspection
Warehouse
Shipping
Customers
Quality Control
Characteristics test of materials and parts for semiconductor devices
Production equipment, environment,auxiliary materials,
workers administration
Process Quality Control
100% inspection of external and electrical characteristics
Sampling inspection of externaland electrical characteristics
Reliability test
Quality information
ClaimsField recordOther general quality information
Informationfeedback
Method
Sampling lot judgment,
Quality level affirmation
Quality level affirmation
Sampling lot judgment,Quality level affirmation
Classification,inspection
Reliability level affirmation
Sampling lot judgment
Figure 1 Manufacturing Process and Quality Control Flowchart
Renesas Diode Manufacturing Process and Quality Control
40
Process
Shipping
Wafer
Mask
Lead
Glass
Purchase of materials
Diffusion
Film thickness inspection
Photolithography
Photolithography inspection
Metallization
PQC
Scribing
Chip visual inspection
Pellet washing
PQC
Assembly
Sealing
Soldering process
PQC
Screening *1)
Total electrical inspection
PQC *1)
Marking
Taping and Packing
Shipment inspection
Warehouse
Type No.
Film thickness, Resistivity
Appearance of wafer
Film thickness
Appearance of wafer
Appearance of chip
Appearance of chip
Type No.
Appearance, Solder thickness
Vibration IR
Electrical characteristics
Failure analysis
Assurance of Taping
Electrical characteristics,
Appearance
Part confirmation
Assurance of basic film thickness
Grasp of diffusion status
Part confirmation
Scratch and Position deviation
Assurance of basic film thickness
Monitor Scratch and Metallization
Selection of good/bad chip
Monitor Scratch and Crack
Part confirmation
Appearance of outline
Feedback of analysis information
Control Item Control Point
: Work process
: PQC (Process Quality Control)
: Inspection
Notes: *1: Individual specification.
*2: One in of the order varies in the manufacture main flow.
Figure 2 Glass-Sealed Type Diode Quality Control Flowchart
Renesas Diode Manufacturing Process and Quality Control
41
Shipping
Purchase of materials
Diffusion
Film thickness inspection
Photolithography
Photolithography inspection
Metallization
PQC
Scribing
Chip visual inspection
PQC
Die bonding
Wire bonding
PQC
Molding
Solder process
Marking
Lead cut
PQC
Total electrical inspection
Taping and Packing
Shipment inspection
Warehouse
Wafer
Mask
Frame
Resin
Type No.
Film thickness, Resistivity
Appearance of wafer
Film thickness
Appearance of wafer
Appearance of chip
Appearance of chip
Type No.
Appearance, Bonding strength
Type No.
Appearance of lead
Electrical characteristics
Cover tape peeling strength
Electrical characteristics,
Appearance
Part confirmation
Assurance of basic film thickness
Grasp of diffusion status
Part confirmation
Scratch and Position deviation
Assurance of basic film thickness
Monitor Scratch and Metallization
Selection of good/bad chip
Monitor Scratch and Crack
Part confirmation
Appearance of bonding
Part confirmation
Appearance of outline
Process Control Item Control Point
: Work process
: PQC (Process Quality Control)
: Inspection
Notes: *1: One in of the order varies in the manufacture main flow.
Figure 3 Plastic-Sealed Type Diode Quality Control Flowchart
42
Precautions for Application
1. Selecting a Semiconductor Device The reliability of semiconductor devices is not limited to Renesas products alone, but is dependent on other factors including electronic equipment firms, and a variety of application conditions including the circuit conditions selected by the user, mounting and environmental conditions. To assure the kind of usage that gives a high level of reliability, please consider the maximum ratings, deratings and selection of package when choosing a device.
1.1 Maximum Ratings The maximum ratings of a semiconductor device are usually defined in terms of the “absolute maximum ratings”, and should not be exceeded under any circumstances, even for an instant.
Even momentary excess of these maximum ratings can lead to immediate deterioration or destruction of the device concerned. Even if the device operates for a while after the excess, it must be assumed that the operation life has been shortened considerably.
In designing electronic circuits with semiconductor devices, the first step to circuit design is to make sure that their maximum ratings are never exceeded, no matter what electrical fluctuations due to external conditions may occur.
Not only the DC maximum ratings but in the case of pulse type applications as well, the area of safe operation (ASO), load locus and peak voltage current should also not be exceeded.
(1) Diode maximum ratings A description of Renesas diode maximum ratings are given in the “Renesas Diode Symbols and Their Definitions” section of this data book.
(2) Area of Safe Operation (ASO) As opposed to the absolute maximum ratings, the ASO ratings indicate the maximum ratings in the operating state. However, since the mutual interactions between the voltages, currents, ambient temperature, and other conditions result in different combinations of conditions that can be used, these issues require careful consideration.
(3) Derating considerations The degree of derating that can be applied to particular maximum ratings is an important aspect of reliability design. Derating characteristics of semiconductor devices has been dealt with previously in this data book. At the system design stage, the derating values each vary slightly with the device type: these include electrical stress derating such as voltage, current, power and load, and mechanical stress derating such as vibration and shock. Table 1 shows examples of derating criteria that should be considered in reliability design. It is advisable to consider these derating criteria for assurance of reliability in the design of equipment. If setting within the derating criteria is problematic, another method, for example, selection of a device with greater maximum ratings, is advised.
Precautions for Application
43
Table 1 Derating Design Criteria Example
Derating Factor Diode (Precaution
for Application) Junction temperature
(Tj – 25°C) × 0.5 + 25°C or less ex.) (Tj = 175°C → 100°C or less)
(Especially for high- reliability applications)
Device ambient temperature
— (Ta = 5 to 35°C) (Especially for high- reliability applications)
Temperature
Others Power dissipation, ambient temperature, heat radiation conditions Tj = Pd × Rth(j-a) + Ta
Relative humidity 45 to 75% RH Humidity Others When condensation forms due to normal
temperature, sudden temperature change etc., semiconductors and PCBs should be coated with a waterproof.
Voltage withstanding
Maximum rating × 0.8 or less (maximum rating × 0.5 or less)
(Especially for high- reliability applications)
Voltage
Over-voltage Prevention measures against over-voltage including static electricity destruction
Average current IO × 0.5 or less (IO × 0.25 or less) (Especially for high- reliability applications)
Current
Peak current IFM [IF(peak)] × 0.8 or less Power Average power Pd × 0.5 (especially for Zener diodes)
ASO Individual catalog maximum rating value of should not be exceeded.
Pulse *1
Surge IFSM [IF(surge)] or less Note: 1. In general, peak voltage (including surge), current power and junction temperature should be
below the maximum ratings to guard against excess states, and deratings for reliability should be in accordance with the above average values. Please consult Renesas technical staff with regard to the ASO, as this varies with the circuit the device is used in.
2. Precautions for Mounting Certain precautions must be observed with regard to structural design or mounting work in semiconductor device assembly and mounting. The following is a description of the precautions it is advisable to observe during design and handling. The method of attachment and mounting should follow the precautions harm the reliability of semiconductor devices.
2.1 Forming and Cutting Leads When mounting an insertion type diode in a printed circuit board, leads may have to be formed to cut. Mechanical destruction of a device may occur or the life of the device may be shortened if unnecessary stress is applied to leads during these processes. In the worst case, the glass body of the diode can crack, so the following precautions should be taken when forming or cutting leads.
(1) When bending lead wires, hold them securely between the glass body and the point to be bent with a pair of pliers. Then bend them holding the open end of the lead so that no bending stress is applied to the glass body as illustrated in figure 1A. Never bend the leads while holding the glass body. The same precaution should be taken when the leads of multiple devices are processed simultaneously using lead forming machines (see figure 1B).
(2) The bend in the lead wires should be made away from the end of the glass body (see figure 1C). Do not bend the lead wires more than 90°.
(3) Do not bend the leads repeatedly.
Precautions for Application
44
: Wrong: Right
Clamp
Forming
mechanism
Maintain a gap
tW1
W2
W3
A) Lead bending
B) Bending a lead wire using a die
C) Bending point
: Wrong: Right
Even if the lead is pulled in the direction
of W3, the gap t must be maintained
between the diode body and the
clamping mechanism to avoid contact.
Figure 1 Precautions for Lead Forming
Example Case Name
Device Type
Example Contents
Package destruction due to automated insertion
Glass-sealed type diode
Countermeasures
Lead wire
Presser mechanism
Glass package
PCB
Lead clinch mechanism
1)
2)
Adjust the position of the presser mechanism (die). Use a die material that buffers the shock on the diode glass.
Set the lead clinch force to the minimum.
During automatic insertion of the diode in a PCB using a high-speed
inserter, the glass package was destroyed by excessive pressing
force on the diode body and/or excessive force from the lead clinch
in the PCB.
Figure 2 Package Destruction Due to Automated Insertion
Precautions for Application
45
2.2 Attachment to a Printed Circuit Board When attaching a semiconductor device to a printed circuit board, make sure the lead wires are not subjected to excessive stress.
Take the following precautions:
(1) The gap between attachment holes in the PCB should match the gap between lead wires to make sure that excessive stress is not applied either during insertion of the device or afterwards.
(2) When attaching a device to a PCB, do not pull unnecessarily on the lead wires to avoid excessive stress build up between the lead wires and package.
(3) Leave a suitable gap between the semiconductor device and the PCB. It is advisable to use spacers or similar means to achieve this.
(4) After fixing to the PCB, do not carry out assembly operations that are likely to cause stress between lead wires and the device body. For example, after soldering lead wires to the PCB, if the device is attached to a heat sink, variance in lead wire length tolerance and dimensions of the PCB could cause concentration of excessive stress on the wires, resulting in detachment or fracture, or package destruction. In this case carry out soldering after the device has been fixed in place.
(5) Pay attention to the precautions described in 2.1 when conducting automatic insertion or forming. (6) After attachment of the diode to the PCB, if the PCB is to be cut or partitioned, bending of the board can
concentrate excessive stress on the lead wires and/or package, resulting in damage to the package or disconnection of leads. In this case a process is needed that does not induce warping of board.
2.3 Soldering 2.3.1 The Insertion Type When soldering the glass-sealed type diode, whether you use a soldering iron or the flow solder method, soldering should be done as quickly as possible and at the glass. With the DO-41 type, soldering work should be done within 5 seconds at 250°C and 10 seconds at 230°C at a point 4-6 mm away from the end of the glass body.
With the DHD type, soldering work should be done within 10 seconds at 260°C and 3 seconds at 350°C at a point 1-1.5 mm away from the end of the glass body.
Take the following precautions in soldering diodes:
(1) Do not let the soldering iron touch the glass body directly (see figure 3A). (2) The soldering point should be over 3mm away from the diode body (see figure 3B). (3) Use of strongly alkaline or acidic flux can cause corrosion of the lead wires. (4) When solder or the soldering iron might touch the glass package of the diode during the soldering process, be sure
to preheat the diode up to about 100°C. (5) Do not pull forcefully on the lead wires when inserting diodes into a printed circuit board (see figure 3C). (6) The recommended soldering iron is the type operated with a secondary voltage supply by transformer. (7) The soldering iron should also be grounded to prevent current leakage. (8) When using adhesives on circuit boards to fix diodes, the diode may break if the adhesive sets extremely hard.
: Wrong: Right: Wrong
Don't touch
the diode body Soldering tip3mm minimum
from the diode body
A lead wire is
pulled with pliers to insert
A) B) C)
Figure 3 Precautions for Soldering
Precautions for Application
46
2.3.2 Surface Mounting Diode (SMD) The recommended conditions for soldering SMD diodes are shown in table 2.
Table 2 SMD Soldering Mounting Inset Conditions
Package Footprint (land) Dimensions Cream Solder Thickness MPAK-5
1.0
1.9
0.950.95
2.60.6
0.15 to 0.30mm
MPAK
1.0
0.950.95
2.6
0.8
0.15 to 0.30mm
CMPAK-4 1.3
1.9
0.8
0.15 to 0.30mm
CMPAK
1.9
0.8
0.6
0.65 0.65
0.15 to 0.30mm
VSON-5
0.4
5
1.0
0.5 0.5
1.3
50.3
0.15 to 0.30mm
MFP12 0.43
0.28
1.1
0.2
5
0.15 to 0.30mm
MP6
0.3
1
0.23
0.38
0.15 to 0.30mm
MP6-8 0.42
0.1
9
0.3
8
0.27
0.15 to 0.30mm
EFP φ0.4
1.0
0.15 to 0.30mm
Notes: 1. Footprint (land) dimensions are measured in millimeters. 2. Cream solder thicknesses are the example values for reflow mounting. 3. The temperature profile is shown below.
Precautions for Application
47
Table 2 SMD Soldering Mounting Inset Conditions (cont.)
Package Footprint (land) Dimensions Cream Solder Thickness SFP φ0.5
1.4
0.15 to 0.30mm
UFP
0.8
1.10.6 0.6
0.15 to 0.30mm
URP
0.8
1.50.8 0.8
0.15 to 0.30mm
TURP
1.1
0.8
0.5
0.8 2.0
0.15 to 0.30mm
LLD
1.6
2.21.2 1.2
0.15 to 0.30mm
Notes: 1. Footprint (land) dimensions are measured in millimeters. 2. Cream solder thicknesses are the example values for reflow mounting. 3. The temperature profile is shown below.
Precautions for Application
48
(1) Examples of Temperature Profile a. Reflow-Soldering Conditions
Soldering Conditions for reflow soldering are shown below. Table 3 Soldering Conditions for the Diode Packages
Lead plating Sn-Pb Sn-Bi, Sn-Cu Solder paste Eutectic alloy
of Sn-Pb Sn-Ag Eutectic alloy
of Sn-Pb Sn-Ag
Package surface temperature (upper limit)
Peak: 260°C 220°C or higher for no more than 60 s
Temperature profile
1 to 4°C/s
Time (s)Pa
cka
ge
su
rfa
ce t
em
pe
ratu
re (
°C)
255°C 16s Max
220°C 60s Max
260°C Max
110 ± 30s
160°C
190°C
b. Flow-Soldering Conditions Soldering Conditions for flow soldering are shown below.
Table 4 Soldering Conditions for Flow Soldering
Item Condition Upper Limit Applicability Temperature 80 to 150°C Preheating Time 1 to 3 minutes
— Substrate surface
Temperature 230 to 250°C 260°C Temperature of the solder layer Solder dip Time 2 to 4 s 10 s Time taken to pass through the solder layer
2.4 Cleaning (1) Fading of the marking and color codes
Clearness of markings and color-fastness of color codes may be lost due to cleaning. Be sure to check these after using cleaning agents.
(2) Electrical and mechanical characteristics (discoloration, deformation, deterioration, etc.) After cleaning a PCB, some corrosive material contained in the cleaning agent or flux may remain on semiconductor devices, causing corrosion of device wiring and leads with resulting loss of reliability. Thorough cleaning is therefore required for PCBs. It is recommended that the level of purity of the PCB after cleaning should conform with the MIL standard below.
(3) There is a possibility that minute Leak is generated by the snuff of flux between leads in Narrow pitch and Lower side electrode package. Please confirm the cleaning method of flux's not remaining.
Precautions for Application
49
Table 5 PCB Level of Purity After Cleaning
Item Standard Remaining Cl volume ≤ 1 μg/cm2 Resistance of solvent (after extraction) ≥ 2 × 106Ω • cm Notes: 1. PCB surface area: Both sides of the PCB + mounted components. 2. Extract solvent: Isopropyl alcohol: H2O = 3 : 1
(Resistance of solvent before extraction is ≥ 6 × 106Ω • cm) 3. Extraction method: Clean both sides of PCB with 10ml/2.54 × 2.54cm2 (minimum of 1 minute) 4. Measuring extracted solvent resistance: Conductivity meter
See MIL-P-28809A for details of the MIL standard. (4) Ultrasonic cleaning
It should be avoid to resonant to the devices. We recommend the following conditions. SMD
Frequency : 28 to 29 kHz (device should have no resonance) Ultrasonic power output : 15 W/l (1 time) Time : up to 30s Others : Make sure that neither devices nor PCB come into contact with the vibration source.
2.5 Parts Layout Environmental conditions have a decisive influence over the reliability of semiconductor devices. The layout of devices in a system should take into account temperature and heat radiation conditions as these are important for maintaining high reliability.
The examples of adverse layout given in the following.
(1) If a semiconductor device is located near a heat source such as a large resistor, the device’s heat radiator will be exposed, and the temperature of the device will rise. If heating abnormally high, the device’s reliability will suffer. Be sure to consider adequate ventilation when locating devices.
(2) Near high-voltage circuitry and in the corners at the bottom stage of equipment where dust easily gathers. In this type of area, dust and debris adhering to semiconductors can cause deterioration of the insulation, giving rise to faulty operation. As a precaution, semiconductors and PCBs installed in such locations should be coated with a waterproof resin. Such waterproof coating for PCBs is extremely effective in assuring and improving reliability under adverse environmental conditions of use. For example, where misoperation can occur due to shorts caused by electrically conductive debris (soldering or plating debris) lodged between circuit board wiring and semiconductor terminals; noise due to dust build-up and moisture absorption; faults due to large current leakage; steam, water drops and condensation due to sudden temperature fluctuation leading to metal migration (Ag migration); and deterioration hermetic seal of glass-sealed diodes (see figure 4). In adverse environments where high humidity, condensation and dust build-up are prevalent, coating of PCBs is a crucial means of preserving reliability in systems that must assure reliable, maintenance-free service over a long period. While there are a wide range of coating materials available, commonly used materials include the Tuffy®*1 TR-1141, TF-1150, and TF1154 products and Humi-seal R1A27*2.
Notes: 1. Manufactured by Hitachi Chemical Company, Ltd. 2. Manufactured by Boxy-Brown, Inc.
Precautions for Application
50
PCB
Water a
a'
b
+ –
Cathode Anode
Glass
Copper chloride
Copper
Iron/nickel
Dumet wire
Note : The film of copper oxide(Cu2O) on the copper
surface of the Dumet wire forms a hermetic structure by spreading across the glass.
a-a' cross-section drawing (enlarged)
Enlarged drawing of area b
Water (H2O)
H2
Cu2O
Cu
Glass
Fe-Ni
Ag bump
Pellet
Cavity
Area of hermetic seal damage
B A
B A
Paht of water penetration
(1) Water adheres to the diode surface when a reverse bias is applied.(2) With reverse bias, water undergoes electrolysis, and hydrogen is generated at the anode.Note : Oxygen (O2) is generated at the cathode.
(3) The copper oxide (Cu2O) is reduced from point A due to hydrogen. Cu2O + H2 2Cu + H2O
(4) Water penetrates the depleted area due to hydrogen reduction.(5) Steps (3) and (4) are repeated, and the hermetic seal is destroyed from point A to point B.
(6) A water-filled cavity develops due to the loss of hermetic seal.(7) Due to water penetration, there is a current leakage to the pellet surface, and the reverse current IR increases.(8) In the state described in (7), if a reverse bias is continuously applied, Ag migration occurs from the pellet anode (Ag bump).
Figure 4 Hermetic Leakage Due to Electrolytic Corrosion
Precautions for Application
51
2.6 Diode Molds (1) When molding a diode in plastic, care should be used a buffer coating of resin or a low hardness mold material
minimize stress on the diode. (2) If used a high hardness mold material, environmental changes or temperature changes could cause wire
disconnection or destruction.
2.7 Surge Open Failure of DHD Type Diodes (including LLD) If a surge voltage or current in excess of the ratings is applied to a DHD diode (including LLD), a short may develop, and in extreme cases, wire disconnection as shown in figure 5 might also occur.
Silverbump
Anode side Dumet
Chip
Cathode side Dumet
Glass sleeve
Before surge
Surge
Gap
After surge
The p-n junction is heated due to surge, and the silver
bump undergoes plastic deformation.
Linear expansion coefficients :
Ag (20.5 × 10−6)
Si (3.5 × 10−6)
Glass (9.1 × 10−6)
A slight gap develops between the surface of the Si
chip and end of the Dumet wire, leading to contact
failure and eventually an open circuit condition.
Figure 5 Plastic Deformation of Silver Bump Due to Heat During Surge Voltage/Current
Precautions for Application
52
3. Precautions for Circuit Mounting Matching the circuit design and initial standards is a prerequisite for regards reliability design, while a margin must be allowed in consideration of deratings and fluctuations in characteristics. Reliability problems involve wiring, external surge, reactance load, noise margin, area of safe operation (ASO), reverse bias, flyback pulse, static electricity pulse stress and more.
3.1 General Precautions Important factors in achieving the specified system reliability are using the devices within the parameter specifications shown in the catalog and observing the following points, taking account of the influence of peripheral components.
(1) Keep the peripheral temperature as low as possible in order to avoid high temperatures in the vicinity of semiconductor elements.
(2) Ensure that the power supply voltage, input voltage, power consumption, etc., are within specification, and use degrading.
(3) Ensure that an excessive voltage is not applied to, or caused on, input, output, power supply, and other pins. Also ensure that these pins are not subjected to strong electromagnetic waves.
(4) Ensure that static electricity is not generated during use. (5) When using high-speed elements, which have an extremely fine structure, either provide protection circuitry, etc.,
for the input section, or else ensure that electrostatic pulses are not applied. (6) When power is turned on and off, ensure that voltage application does not become unbalanced. For example,
excessive stress will be exerted if a voltage is applied to input or power supply pins, etc., when circuit ground pins are floating.
(7) In order to protect a circuit, please do not carry out use which destroys a diode electrically. An example is shown in 3.2 about the main items.
(8) Note on use in electromagnetic wave environments A source of strong electromagnetic waves in the vicinity of a Zener diode may alter the characteristics of the diode. For example, a drop in the breakdown voltage has been reported when a portable wireless unit (144 MHz, 430 MHz) with a 3 W output is brought within a distance of 10 cm from a diode. Please consult Renesas if there is a risk of exposure to strong electromagnetic waves in the operating environment.
3.2 Countermeasures to Noise and Surge Voltage Surge voltage, static electricity, noise and other problems are common to all semiconductor devices, and require countermeasures to remove the causes or reduce their influence.
In designing semiconductor equipment, it is considered common practice to make an allowance of about 10% to cover fluctuations in commercial power supplies. However, failure or misoperation of semiconductor equipment could occur if mechanical equipment generating surge voltages is being used in the particular region. This is due to build-up of surge in the power line, and impulse surge can also be induced during electrical storms. Equipping the AC line with a filter like that shown in figure 6 can help reduce the effects of surge. Where surge and static electricity for the AC line does not enter indirectly, but could be applied directly to components and semiconductor devices on a circuit board, use of a shield or similar measure is required. Also, low ground impedance for a shield is essential. There is no effect if impedance is not low.
When direct static electricity or surge is likely to be input as noise, introduce a protector circuit like the one shown in figure 7 as as special countermeasure. The time constant Ri × Ci is set in such as way as to effectively absorb surge pulses without having influence on device operation.
Precautions for Application
53
AC100 V
L2
L1
C
Primary side (P) Secondary side (S)
L1 = L2 = 2 to 10mH, C = 0.1 to 0.5μF
Figure 6 Example of Surge Absorption Circuit
External noise,external surge
Separatecircuit
R1
R2
R3
External noise,external surge
RiCi value is optimal in relation to conditions of use
Semi-conductordevicesin circuitbeingused
C1 C3
C2
Figure 7 Example of Surge Protection Circuit
3.3 Characteristic Parameters and their Relation to Reliability Each semiconductor device has its own characteristic parameters prescribed according to function and application. Each of these parameters has a predetermined range which should be matched. In system design, the significance of these parameters varies a great deal depending on application, and design must project a margin in initial characteristics as regards the critical parameters, or derating must be carried out. In the former case, a device should be selected with regard to the limit of operation range as a system. The statistical design method should be employed, and reliability testing as well as failure criteria of Renesas semiconductor devices should also be taken into consideration. In the case of derating, refer to the derating applications given under Renesas Semiconductor Device Reliability. Since the majority of parameter fluctuations cannot be foreseen under conditions of use, although design employing initial standards is considered justifiable in many cases, design with reference to failure criteria is needed as regards significant system items or items with no margin.
The following are points for consideration with regard to parameters.
(1) Whether the significance of a parameter extends to system failure. (2) The state of the parameter’s initial value margin. (3) Does the parameter change over time, and if so, is the change in the direction of the margin? (4) Is the change permissible for use of the device with other devices? (5) Is redundant design possible? (6) Is it possible to introduce the statistical design method for parameters?
Precautions for Application
54
4. Precautions for Storage, Transportation and Measuring Other precautions involve problems occurring during storage, transportation and measurement. Although the general precautions for storage and transportation of electronic components can be applied as they are to semiconductor devices, the latter require certain special precautions in addition to these. The following account includes the general precautions.
4.1 Storage of Semiconductor Devices The following methods of storage are advisable for semiconductor devices. If the precautions are not observed, faults in electrical characteristics, solderability, external appearance and other attributes may occur. In some cases, failure may also result.
Precautions for storage are as follows:
(1) The storage location should be kept within the optimum ranges of temperature and humidity: 5 to 35°C and 45 to 75% R.H. are the optimal conditions.
(2) The atmosphere in the storage location should not contain any noxious gases, and the amount of dust should be minimal.
(3) Storage containers should not be susceptible to static electricity. (4) Semiconductor devices should not be subjected to loads. (5) When storing for long periods, store in the non-processed state. When leads have already been formed, corrosion
at their bent portion of leads may occur. (6) Be sure that sudden temperature changes sufficient to cause condensation do not occur during storage of the
devices.
4.2 Precautions for Transportation When transporting semiconductor devices or their assembly units or subsystems, the same precautions as for other electronic components should be taken. The items listed in 4.1 and 4.2 have to be followed.
(1) Transportation containers, jigs etc., should not pick up static charge due to vibration en route. (2) When transporting semiconductor devices and PCBs, try to keep mechanical vibration and shocks to an absolute
minimum. Especially when bag packing of a glass-sealed type diode is dealt with, be careful of the following point. Even when the following handling is performed and there is no externally caused injury remarkable in a bag or a packing box, the products in a bag may collide and a glass chip and a crack may arise. a. Please do not perform what a floor etc. is dropped or throws the packing box containing the product to it. b. When a packing box conveys a product, please use shock absorbing material for neither vibration of
transportation nor a shake to join a direct product.
Precautions for Application
55
4.3 Precautions for Measuring (1) Persons handling semiconductor devices should be grounded via a high resistance to discharge any static electricity
that may be adhering to their clothing. The resistance value should be around 1 MΩ and no other person should come between the person being discharged and ground (GND). See figure 8 for static electricity data for human bodies. Since the product shown in Table 6 is susceptible to destruction by static charge. Be specially aware, therefore, of electrical charge on persons and on equipment in the vicinity.
Table 6 Static Electricity Destruction Voltage
Part No. Static Electricity
Destruction Voltage HSB88YP, HSC276, HSM88AS, HSM88ASR, HSM88WA, HSM88WK, HSM198S, HSM276S, HSM276SR, HSU88, HSU276
30 V
HVU359, HVU17, HVC365 80 V HSM107S 100 V Note: 1. Test condition: C = 200 pF, Both forward and reverse direction 1 pulse.
Static charge on clothing varies greatly with the type of clothing, covering, and physical constitution as wellas ambient temperature and humidity. The following is one example of measurement of static charge on a person.
Body charge measurement example
ConditionMax.
voltageAmbient
conditions
(1)
(2)
(3)
(4)
a 100% cotton shirt
b Synthetic fiber shirt *
a Synthetic fiber shirt *
b 100% cotton shirt
a Bare skin
b 100% cotton shirt
a Bare skin
b Synthetic fiber shirt *
+4,900 V
−13,000 V
−3.500 V
+7,200 V
−410 V
+980 V
+3,200 V
−7,000 V
Ambienttemp.20°C
Relativehumidity
40%
a,b : clothingc,d : metal tub (* polyvinyl chloride synthetic fiber)
ca b b d
Insulation Iron plate
Static charge between iron plate and iron tub : 50pFInsulation resistance : 1.5 × 10
12Ω
Measuring method for body charge
Put on clothing (a) against bare skin and place (b) on top. The test subject should be grounded during this operation. After removing the ground line, take off clothing (b) and place in tub (d).Measurements of the electrical potential were taken at this time for this example.
The (a) bare skin referred to in items (3) and (4) in the table represents a person wearing one garment with friction between the person's body and the garment.
Figure 8 Example of Measuring Static Charge on a Person
Precautions for Application
56
5. Precautions for Use of each Line of Products
5.1 Precautions for use of DHD Type Diodes (1) Since the glass-sealed (DHD) type diode body consists of glass and lead wire solder, consider the following to
prevent subjecting these diodes to unreasonable force. a. Do not drop glass-sealed (DHD) type diodes on concrete, glass plate, metal plate or any other hard surface to
avoid undue mechanical shock. Such shocks could result in cracking of the glass body, deterioration of characteristics, destruction or loss of hermetic seal.
b. When forming and cutting, excessive force should not be applied to the body of the glass-sealed type diode. The tension from leads to body must be kept below 10 N in such processing. It is needed to secure lead wires with approximately 30 N, or otherwise to shift the cutter blade timing of both sides.
(2) Schottky barrier diodes are susceptible to destruction by static charge. Be specially aware, therefore, of electrical charge on persons and on equipment in the vicinity.
(3) The main market failure modes of a diode are based on surge. Please take into consideration enough on surge and derating conditions.
5.2 Precautions for use of SMD Diodes (1) SMD diodes are formed in consideration of PCB mountability, and can be mounted without modification. UFP,
SFP, EFP,MP6 Series TURP, VSON-5, and MFP12 types are extremely small, special packages that are very susceptible to tensile force on leads. It is not used that they be mounted or later adjusted by hand.
(2) When mounting on a PCB, adhesive is used to temporarily hold diodes in place before solder is applied. When a SMD diode is held by adhesive, be sure that it is not subjected to undue stress.
(3) Since SMD diodes come in small package, be aware of thermal stress from soldering, flux and cleaning. Soldering should be done in as short a time as possible. When flow soldering: 260°C max for 10 s. When using a soldering iron: 350°C max for 3 s. Organic flux (rosin) is frequently used for soldering, and in view of corrosion resistance and insulation, this material is also recommended for soldering SMD. After soldering a SMD, wash thoroughly or use the shower method or ultrasonic method for cleaning off the flux. (Refer 2.3.2 for the recommended conditions.)
(4) Compared with other diffuse junction diodes, the SMD Schottky barrier diode is exceptionally prone to damage by static electricity, so it is needed to protect these diodes.
(5) When targeted for use under severe environmental conditions, SMD diodes should receive a moisture-proof coating after assembly on a PCB. It is advisable to coat the circuit board to protect it against external debris and moisture [see 2.5 (2)].
(6) Using a mounter to fix SMD diodes to a PCB can result in bending of the leads, so make sure that a force of no more than 3 N is applied. And also required to not apply superfluous force on the package or leads as being mounted, especially for UFP, SFP, EFP, TURP, VSON-5T, MFP12, MP6 Series package and the package with halogen free resin.
Precautions for Application
57
(7) When the SMD is mounted through reflow soldering, avoid incorrect positioning and floating-type failures due to bad mounting balance by taking care on the following points. The left and right land patterns must have the same shape. The left and right land areas, including the wiring sections, must take up the same area and include the same amount
of solder. The land position should become symmetrical. Heat must be applied to both soldering sections at the same time (the direction shown in figure 9 is recommended).
Reflow direction
Product
Substrate
Figure 9
(8) Do not apply high temperatures in soldering some of the packages, e.g. by using a soldering iron, since this applies strong thermal stress to the packages. (Please refer to the data sheet.)
(9) The lead material is exposed at the end of the leads of the package, because this is a cut surface. Accordingly, the solderability of the ends of the leads has not been checked. Users of this package must check this themselves.
5.3 Precautions for use of LLD Diodes (1) When mounting LLD diodes to a circuit board, and using adhesive to temporarily fix them in position (particular
when a large volume is used), soldering and consequent heating can subject diodes to excessive stress, which could result in cracking of their glass packages. Mount LLD diodes with low hardness and small bond in temporary.
(2) Use rosin type flux to assure reliable mounting. Use of chlorine containing flux can lower reliability by causing corrosion of Dumet wire.
(3) Make sure that diodes are not subjected to excessive stress during or after mounting on a PCB. a. Horizontal direction : 10 N or less b. Axial direction : 5 N or less (compression and tensile forces) c. Board warp : Warp width 2 mm or less (when support gap is 90 mm)
Horizontal direction
Axial
direction
Extentof warp
Figure 10
(4) Refer to the 5.2(7) for the notes at the time of carrying out reflow mounting of the LLD.
5.4 Precautions for use of LLD, UFP, SFP, EFP, MP6 Series, TURP, VSON-5, and MFP12 Diodes
(1) When mounting diodes to a circuit board, so make sure that flatten on the PCB. (Not becoming rough by wiring under diode body.)
(2) Please superfluous power does not join a product by the curvature of a circuit board or bending by circuit board break etc.
Precautions for Application
58
5.5 Note on Product Safety 5.5.1 Renesas Efforts in the Product Safety Area While Japan's product liability (PL) law came into effect in July 1995, Renesas has always considered product safety to be one aspect of quality, and has always stressed product safety in semiconductor products as an integral part of our product quality program. The following describes Renesas's basic approach to product safety and specific activities related to product safety.
Note that the product safety promised by Renesas consists of items generally required of semiconductor products themselves, which are then used as components in user systems. Safety measure required by the customer's product application and/or usage environment must be taken by the customer.
(1) Product safety measures from the product fabrication stage Renesas incorporates items related to product safety into each of the processes, such as the "sample reliability program" and the "quality approval flow" shown in the quality assurance system. Thus product safety is incorporated as an aspect of quality control from the product specification determination, development, and design stages. Table 7 lists the main product safety items in the major steps from product development through shipment and sales.
Table 7 Main Product Safety Items
Main Division Items that must be considered (main points) • Product development • Specification determination
• Customer applications • Usage environment
• Design • Catastrophic failure modes • Malfunction modes
• Manufacture • Making manufacturing rules explicit and strictly following said rules. • Quality assurance • Sales
• Quality assurance and evaluation/verification at each stage in the manufacturing process • Provision of a complete documentation set
(2) Documentation
Renesas provides a full complement of documentation, including data sheets, that present the performance of our products so that these semiconductor products can be used safely. Renesas also issues a wide range of documents written from the standpoint of product safety so that our customers can obtain the full specified performance of our products in their applications.
Table 8 Documents Related to Product Safety
Application area Specific document examples Documents that present product specifications
Data sheets, technology reports, and delivery specifications documents (purchase specifications documents)
Documents that present usage notes Reliability handbooks and packaging manuals Other documents (Documents produced under individual agreements with customers)
Sales contracts and quality agreements
(3) Safety measures based on meetings with customers to discuss specifications and product quality
Renesas is prepared to hold product quality meetings with customers to assure that our customers are able to use our products under conditions appropriate to the specifications of the product. As mentioned previously, these conditions are announced in a variety of documents. However, we are more than willing to meet with customers to discuss product selections appropriate to the customer's applications.
Precautions for Application
59
5.6 Requests to Our Customers To use Renesas semiconductor products safely, carefully consider the following points when designing equipment and systems.
(1) When using Renesas semiconductor products, read all the documentation provided carefully, and verify the specifications of the product itself as they relate to the environment under which the product will be used and operated. If you find any points in any Renesas document unclear, please report that to your Renesas sales representative.
(2) If Renesas products are to be used in areas that require high reliability and high safety margins (such as trunk line communication systems, transportation system equipment, aircraft or aerospace applications, or safety equipment), be sure to take the characteristics and reliability of the semiconductor devices themselves into consideration at the unit or system design stage, and adopt appropriate failsafe design techniques in the system design.
(3) Renesas does not provide semiconductor products that were developed with special consideration for use in equipment that human life may be dependent on. If you are considering using Renesas products in life support or other medical equipment, please contact your Renesas sales representative and inform us as to whether or not you have adopted safety measures in the system design.
(4) Renesas is prepared to meet with customers if necessary to discuss measures such as product selection to allow semiconductor products to be used without problem. If you have any questions, doubts, or concerns about product safety, please feel free to discuss those with your Renesas sales representative.
60
Standard Taping Specifications
1. Features of Standard Taping Specifications Silicon diode taping specifications are classified into three major categories according to the types of automatic mounting machines of set manufacturers.
(1) Axial type taping Enables automated assembly with each type of automatic mounting machine. Specifications comply with EIAJ standards. A 5mm pitch insertion is possible with MHD and UMD type diodes.
(2) Radial type taping This matches Panasert and Abisert specifications.
(3) Embossed type taping Can be used with all types of automatic mounting machine.
2. Taping Specifications
2.1 Axial Type Taping (1) Application packages
DO-35 MHD
(2) Taping specifications
Unit: mm Taping Symbol Package Code Form and Dimensions Appearance Quantity
TA *2 DO-35 MHD
Division I
52
75
255
80
5000 pcs AMMO pack
TD DO-35 MHD
Division II
26
45
255
50
2500 pcs
Notes: 1. See “(3) Taping dimensions”, for details of form and dimensions. 2. Recommended taping specifications.
Standard Taping Specifications
61
Unit: mm Taping Symbol Package Code Form and Dimensions Appearance Quantity
AMMO pack TE *2 DO-35 MHD
Division III
26
85
255
50
5000 pcs
Notes: 1. See “(3) Taping dimensions”, for details of form and dimensions. 2. Recommended taping specifications. (3) Taping dimensions
b/2 b/2
dd e
cL2L1ba
hg
f
Unit: mm
Taping Dimensions Division Symbol I II III
a 64 ± 1.5 38 ± 1.5 38 + 1.5/–1.0 b 52.4 ± 1.2 26 + 1.2/–0 26 + 0.5/–0 c 6 ± 0.5 ← 6 ± 0.4 d ± 0.5 ± 0.5 ± 0.2 e 3.2 min ← ← f 5.0 ± 0.38 5.0 ± 0.38 5 ± 0.3 g ± 1.0 1.0 max ± 0.5 h 1.0 max ← ← | L1-L2 | 1.0 max 1.0 max 0.4 max JEDEC CODE TA21(R) TA11(R) —
Standard Taping Specifications
62
2.2 Radial Type Taping (1) Application packages
DO-35 MHD
(2) Taping specifications
Unit: mm
Taping Symbol Package
Code Form and Dimensions Appearance QuantityRE *2 REB
DO-35
(12.7)
(5.0)
(12.7)
(9.0
)
(18
.0)
(26
.3)
(18
.5)
(16
.0)
Withdrawl direction (right)Withdrawl direction (left)
Insulationcoating
(Cathode po-sition example)
(270)
(23
0) F
R
(45)
Withdrawn from side F
4000 pcs
RX *2
AMMO pack
RY MHD (12.7)
(5.0)
12.7
(20
.5)
(9.0
)
(18
.0)
(270)
F
(40)
(180)
Withdrawn from side F.When withdrawn to the side with the F printed on it formthe glass body packing:RX protrudes from the cathodeRY protrudes from the anode.
2500 pcs
Notes: 1. Dimensions are based on EIAJ RC-1008A vertical taping shape C specifications. 2. Recommended taping specifications. (3) Taping symbol of glass package
Taping Symbol Taping Symbol Taping Width Old New Taping Width Old New
52 mm TA/TK 7 RY 5 TE 8
Radial type RE/RX 6 26 mm
TD/TN 9
Standard Taping Specifications
63
(4) Taping symbols Radial taping takes the following symbols according to forming shape, cathode position, packing method and direction of withdrawl.
Cathode Position Withdrawl Direction Packing Method Taping Symbol Top Bottom Right Left
RE/REB RX
AMMO pack
RY When withdrawn to the side with the F printed on it form the glass body packing: RX protrudes from the cathode RY protrudes from the anode.
2.3 Embossed Type Taping 2.3.1 8-mm Taping (1) Application packages
LLD MPAK CMPAKMPAK-5 CMPAK-4
URP UFPTURP SFP
MFP12
MP6-8EFP
VSON-5
MP6
(2) Taping specifications
Package Packing Form Packing Unit Packing
Specification Code Remarks TR *2 (Taping to Right)
TR withdrawl direction→
LLD Taping
2500 (units/reel)
TL (Taping to Left)
TL withdrawl direction→
TR *2 (Taping to Right)
TR withdrawl direction→
MPAK-5 VSON-5
Taping
3000 *3 (units/reel)
TL (Taping to Left)
TL withdrawl direction→
TR *2 (Taping to Right)
TR withdrawl direction→
(Marked surface up)
MPAK CMPAK
Taping
3000 *3 (units/reel)
TL (Taping to Left)
TL withdrawl direction→
(Marked surface up) Notes: 1. Missing devices ≤ 0.2% reel, continuous miss = 0/reel. 2. Recommended taping specifications. 3. Refer to (6) Taping Symbols for the details of a packing specification code.
Standard Taping Specifications
64
Package Packing Form Packing Unit Packing
Specification Code Remarks TR *2 (Taping to Right)
(Marked surface up)
TR withdrawl direction→
CMPAK-4 Taping
3000 *3 (units/reel)
TL (Taping to Left)
TL withdrawl direction→
(Marked surface up) MFP12 Taping
4000 *3 (units/reel)
P *2 (Taping to Right)
Withdrawl direction→
URP Taping
3000 *3 (units/reel)
TR *2 (Taping to Right)
TR withdrawl direction→
4000 *3 (units/reel)
TR *2 (Taping to Right)
TR withdrawl direction→
UFP (TURP)
Taping
8000 *3 (units/reel)
KR *2 KR withdrawl direction→
SFP Taping
8000 *3 (units/reel)
KR *2 KR withdrawl direction→
EFP Taping
10000 *3 (units/reel)
KR *2 KR withdrawl direction→
MP6 MP6-8
Taping
10000 *3 (units/reel)
R *2 Withdrawl direction→
Notes: 1. Missing devices ≤ 0.2% reel, continuous miss = 0/reel. 2. Recommended taping specifications. 3. Refer to (6) Taping Symbols for the details of a packing specification code. (3) Taping symbol of resin package
Taping Symbol Taping Width Old New
TR P TL H
8 mm
KR R
Standard Taping Specifications
65
(4) Taping reel dimensions
φ13.0
± 0
.5
φ1
78
± 2
9.5 ± 0.51.0 ± 0.5
φ 21.0 ± 0.8
2.0 ± 0.5
Label
Unit: mm
(5) Carrier tape and cover tape dimensions
Unit: mm, ( ): reference only Package Dimensions
LLD
4.0 ± 0.1
1.7
5 ±
0.1
(5.6
)
8.0
± 0
.2
3.5
± 0
.12.0 ± 0.054.0 ± 0.1
(1.55)
0.25 ± 0.05
(φ1
.0)
(3.7
)
φ1.5+0.1–0.05
Device
Cover tape Carrier tape
MPAK
4.0 ± 0.1φ1.5
+0.1–0
(5.6
)
4.0 ± 0.1 2.0 ± 0.05
1.7
5 ±
0.1
8.0
± 0
.2
3.5
± 0
.1
(1.4)
0.25 ± 0.05
(φ1
.1)
(3.3
)
Device
Cover tape Carrier tape
Standard Taping Specifications
66
Unit: mm, ( ): reference only Package Dimensions
MPAK-5
4.0 ± 0.1φ1.55 ± 0.10
(5.6
)
4.0 ± 0.1 2.0 ± 0.05
1.7
5 ±
0.1
8.0
± 0
.2
3.5
± 0
.1
(1.5)
0.25 ± 0.05
(φ1
.05
)
(3.3
)
Device
Cover tape Carrier tape
CMPAK
4.0 ± 0.1
φ1.55+0.1–0.05
1.7
5 ±
0.1
(5.6
)
8.0
± 0
.2
3.5
± 0
.12.0 ± 0.054.0 ± 0.1
(1.25)
0.2 ± 0.05
(φ1
.05
)
(2.6
5)
Device
Cover tape Carrier tape
CMPAK-4
4.0 ± 0.1
φ1.55+0.1–0.05
1.7
5 ±
0.1
(5.6
)
8.0
± 0
.2
3.5
± 0
.12.0 ± 0.054.0 ± 0.1
(1.15)
0.2 ± 0.05
(φ1
.05
)
(2.4
)
Device
Cover tape Carrier tape
VSON-5
4.0 ± 0.1
φ1.5
1.7
5 ±
0.1
(5.6
)
8.0
± 0
.2
3.5
± 0
.05
2.0 ± 0.054.0 ± 0.1
0.90 ± 0.10
0.25 ± 0.05
φ1
.0
1.7
5 ±
0.1
+0.1–0
+0.2
–0
Device
Cover tape Carrier tape
Standard Taping Specifications
67
Unit: mm, ( ): reference only Package Dimensions
MFP12 2.0 ± 0.05 4.0 ± 0.1
3.5
± 0
.05
1.7
5 ±
0.1
8.0
± 0
.1
φ1.5 +0.1–0 (0.18)
(2.8
5)
(0.65)
Carrier tape
Device
Cover tape
URP
4.0 ± 0.1
1.7
5 ±
0.1
(5.6
)
8.0
± 0
.2
3.5
± 0
.12.0 ± 0.054.0 ± 0.1
(1.25)
0.25 ± 0.05
(φ1.1
)
(2.9
)
φ1.5+0.1–0
Device
Cover tape Carrier tape
TURP
4.0 ± 0.1
1.7
5 ±
0.1
(5.6
)
8.0
± 0
.2
3.5
± 0
.12.0 ± 0.054.0 ± 0.1
(0.65)
(0.20)
(2.6
5)
φ1.5+0.1–0
Device
Cover tape Carrier tape
UFP
0.2 ± 0.05
(1.8
5)
(1.3
)
(1.9
)
(1.3
5)
(0.73)
8.0
± 0
.2
3.5
± 0
.05
2.7
51
.75
± 0
.1
φ1.55+0.1–0.05
φ 0.5 ± 0.05
4.0 ± 0.12.0 ± 0.05
Device
Cover tape
Carrier tape
Standard Taping Specifications
68
Unit: mm, ( ): reference only Package Dimensions
SFP
0.2 ± 0.05
(1.6
5)
(1.0
7)
(1.7
)
(1.2
)
0.6 ± 0.05
8.0
± 0
.2
3.5
± 0
.05
(2.7
5)
1.7
5 ±
0.1
φ1.55 ± 0.05
φ 0.5 ± 0.05
4.0 ± 0.12.0 ± 0.05
Device
Cover tape
Carrier tape
EFP
Device
Cover tape
Carrier tape
8.0
0 ±
0.1
3.5
± 0
.05
2.7
51
.75
± 0
.1
φ1.55 ± 0.05
φ 0.50 ± 0.05
4.0 ± 0.052.0 ± 0.05
(0.56)
(1.1
5)
(1.1
)
MP6
(0.7
2)
Device
2.0 ± 0.05 4.0 ± 0.05
3.5
0 ±
0.0
31
.75
± 0
.10
8.0
± 0
.10
φ1.5 +0.1–0
(0.20)
Carrier tape
(0.37)Cover tape
MP6-8
2.0 ± 0.05
4.0 ± 0.05
(0.20)
(1.7
3)
(0.37)
Carrier tape
Device
Cover tape
φ1.5 +0.1–0
2.7
51
.75
± 0
.18.0
± 0
.1
(1.7
9)
φ 0.50 ± 0.05
3.5
± 0.
03
Standard Taping Specifications
69
(6) Taping Symbols Taping of URP package takes the following symbol according to quantity, group in 1 reel etc.
Taping code
Taping direction
Maximum category in 1 reel
Quantity in 1 reel Group End of Group Remarks
TRF [P] — 3000 pcs — — — TRU [P] 4 space TRV [P]
TR 4 3000 pcs 10 + 1n
Non-reflection tape on1 space
C.C system *1
Note: 1. Continuous Connected taping system of variable capacitance diode.
Taping of UFP package takes the following symbols according to quantity, group in 1 reel etc.
Taping code
Taping direction
Maximum category in 1 reel
Quantity in 1 reel Group End of Group Remarks
TRF [P] — — — — TRU [P] 9 space TRV [P]
TR 5
4000 pcs 10 + 1n
1 space + Non-reflection tape on 1 space + 1 space
C.C system *1
KRF [R] — — — — KRU [R] 4 space KRV [R]
KR 10
8000 pcs 10 + 1n
Non-reflection tape on1 space
C.C system *1
Note: 1. Continuous Connected taping system of variable capacitance diode.
Taping of SFP package takes the following symbols according to quantity, group in 1 reel etc.
Taping code
Taping direction
Maximum category in 1 reel
Quantity in 1 reel Group End of Group Remarks
KRF [R] KR — 8000 pcs — — —
Taping of EFP package takes the following symbols according to quantity, group in 1 reel etc.
Taping code
Taping direction
Maximum category in 1 reel
Quantity in 1 reel Group End of Group Remarks
KRF [R] KR — 10000 pcs — — — Note: Characters in [ ] in Taping code are new code.
3. Precautions for Use (1) Close attention should be paid to packages in order to counter dimensional faults of taping etc. Adequate care
must be taken with shipping crates to avoid damage. (2) When removing articles from cases, handle with the taped portions. Putting pressure on diodes can result in pitch
slippage and bending of leads. (3) When storing the products, take care so that packing cases are not damaged by stacking. Make sure the storage
area is free of water leakage.
70
Selection Table According to Main Diode Applications
Recently, the range of use of electronics devices has expanded, and the number of characteristics demanded of diodes had proliferated, though it is difficult, both technologically and economically, to guarantee the entire spectrum of diode characteristics.
Therefore, the characteristics listed in data sheets and other technical literatures are limited to those required for representative applications (main applications) such as the one shown in figure 1.
Of course, it is possible to use diodes in applications outside the scope of data sheets etc., and we suggest you contact Renesas Sales with regard to special applications.
Table 1 shows the general usage outside the scope of data books etc., where diodes are suitable or unsuitable for application.
••
RKV500KKVariable Capacitance Diode for UHF/VHF tuner
REJ03G1279-0100
Rev.1.00
Oct 13, 2005
Features
Low series resistance and good C-V linearity.
• Super small Flat Lead Package (SFP) is suitable for surface mount design.
Ordering Information
Type No. Laser Mark Package Name
Package Code
(Previous Code)
RKV500KK A7 PUSF0002ZB-A
(SFP)
SFP
Pin Arrangement
Cathode mark
Mark
1. Cathode
2. Anode
1 2A7
Figure 1 Data Sheet Application Example
Selection Table According to Main Diode Applications
71
Table 1 Suitability/Unsuitability for Applications other than the main Applications
Main
Application
Note: : Optimal use, : Optimal use, : Conditional use possible (contact Renesas for details), ×: Unusable
General
Detector,
Modulator,
Demodu-
lator
High
Speed
Switching
High
Voltage
Switching
High Fre-
quency
Switching
(band
switch)
Atte-
nuator,
Antenna
Switch
System
Protec-
tion
Constant
Voltage
Zener
Tempe-
rature
Compen-
sated
Varistor
Detector,
Mixer
Schottky
Rectifier,
High Fre-
quency
Rectifier
Elec-
tronic
Tuning
General
detector,
modulator,
demodulator
High speed
switching
High voltage
switching
High
frequency
switching
(band
switch)
Attenuator,
antenna
switch
System
protection
Constant
voltage
Zener
Temperature
compen-
sated
varistor
Detector,
mixer
schottky
Rectifier,
high
frequency
rectifier
Electronic
tuning
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
Application other than Main Applications
72
HVU17 Variable Capacitance Diode for VCO
Features • Good linearity of C-V curve. • To be usable at low voltage. • High figure of merit. • Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information and Pin Arrangement
Cathode mark
Mark
1 2E1. Cathode
2. Anode
HVU17TRF
Package Name : URPPackage Code : PTSP0002ZA-A
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 15.0 — — V IR = 10 μA Reverse current IR — — 100 nA VR = 9 V
C1 50.0 — 85.0 VR = 1 V, f = 1 MHz C3 16.1 — 27.3 VR = 3 V, f = 1 MHz
Capacitance
C4.5 5.23 — 8.84
pF
VR = 4.5 V, f = 1 MHz Capacitance ratio n 5.60 — — — C1 / C4.5 Figure of merit Q 50 — — — VR = 2.5 V, f = 10 MHz ESD-Capability *1 — 80 — — V C = 200 pF, Both forward and
reverse direction 1 pulse. Note: 1. Failure criterion ; IR ≥ 100nA at VR =9 V
HVU17
73
Main Characteristics
20
10
10
1.01.0 40
10–8
10–11
10–12
10–9
10–10
100
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
0 4 8 12 16
f = 1MHz
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)R
eve
rse
cu
rre
nt
I R
(
A)
74
HVD350B, HVC350B, HVU350B Variable Capacitance Diode for VCO
Features • High capacitance ratio. (n = 2.80 min) • Low series resistance. (rs = 0.50 Ω max) • Good C-V linearity.
Ordering Information and Pin Arrangement
1 2B0
Package Name : UFP
Package Code : PWSF0002ZA-A
Package Name : SFP
Package Code: PUSF0002ZB-A
1 2A
HVC350BTRF, HVC350BKRFHVD350BKRF HVU350BTRF
Package Name : URP
Package Code : PTSP0002ZA-A
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
1 2B0
Cathode mark
Mark
1. Cathode
2. Anode
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 15 V Reverse current IR2 — — 100
nA VR = 15 V, Ta = 60°C
C1 15.50 — 17.00 VR = 1 V, f = 1 MHz Capacitance C4 5.00 — 6.00
pF VR = 4 V, f = 1 MHz
Capacitance ratio n 2.80 — — — C1 / C4 Series resistance rS — — 0.50 Ω VR = 1 V, f = 470 MHz Note: In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVD350B, HVC350B, HVU350B
75
Main Characteristics
0.1 1.0 10
30
25
20
10
5
15
0
f=1MHz
0 16 204 8 12
1.0 10
0
0.1
0.2
0.3
0.4
0.5
0.5
30
Re
ve
rse
cu
rre
nt
IR
(A
)
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
10−8
10−10
10−12
10−15
10−14
10−13
10−9
10−11
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
f=470MHz
Se
rie
s r
esis
tan
ce
r S
(Ω
)
Fig.4 LF vs. Reverse voltage
Reverse voltage VR (V)
0.1 1.0 10
-1.5
-1.0
-0.5
0
LF =
Δ(L
og
C)/Δ
(Lo
gV
R)
76
HVD355B, HVC355B, HVU355B Variable Capacitance Diode for VCO
Features • High capacitance ratio. (n = 2.20 min) • Low series resistance. (rs = 0.60 Ω max)
Ordering Information and Pin Arrangement
1 2B1
Package Name : UFP
Package Code : PWSF0002ZA-A
Package Name : SFP
Package Code: PUSF0002ZB-A
1 2B
HVC355BTRF, HVC355BKRFHVD355BKRF HVU355BTRF
Package Name : URP
Package Code : PTSP0002ZA-A
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
1 2B1
Cathode mark
Mark
1. Cathode
2. Anode
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 15 V Reverse current IR2 — — 100
nA VR = 15 V, Ta = 60°C
C1 6.40 — 7.20 VR = 1 V, f = 1 MHz Capacitance C4 2.55 — 2.95
pF VR = 4 V, f = 1 MHz
Capacitance ratio n 2.20 — — — C1 / C4 Series resistance rS — — 0.60 Ω VR = 1 V, f = 470 MHz Note: In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVD355B, HVC355B, HVU355B
77
Main Characteristics
0
0.6
0.2
0.1 1.0 10
0.1
0.3
Se
rie
s r
esis
tan
ce
r
S
(Ω
)
0.4
0.5
0.1 1.0 10–1.5
–1.0
–0.5
0
0.1 1.0 10
12
10
8
4
2
6
00 16 20
10–6
10–8
10–10
4 8 1210–13
10–12
10–11
10–7
10–9
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt
I R
(
A)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)C
ap
acita
nce
C
(
pF
)
Fig.4 LF vs. Reverse voltage
Reverse voltage VR (V)
LF =
∆(L
og
C)/∆
(Lo
gV
R)
Ta = 75°C
Ta = 25°C
f = 470MHz
f = 1MHz
78
HVD359, HVU359 Variable Capacitance Diode for VCO
Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage.
Ordering Information and Pin Arrangement
Package Name : SFPPackage Code : PUSF0002ZB-A
1 2G
HVD359KRF HVU359TRF
Package Name : URPPackage Code : PTSP0002ZA-A
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
1 2S
Cathode mark
Mark
1. Cathode
2. Anode
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 10 V Reverse current IR2 — — 100
nA VR = 10 V, Ta = 60°C
C1 24.8 — 29.8 VR = 1 V, f = 1 MHz Capacitance C4 6.00 — 8.30
pF VR = 4 V, f = 1 MHz
Capacitance ratio n 3.00 — — — C1/C4 Series resistance rS — — 1.50 Ω VR = 4 V, f =100 MHz ESD-Capability *1 — 200 — — V C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR ≥ 20 nA at VR =10 V 2. In the SFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,
the solderability of the lead tip has been ignored. Please test and confirm before use.
HVD359, HVU359
79
Main Characteristics
0 20161284
1.0 10
60
50
40
20
10
30
0
f=1MHz
0.1
10-10
10-9
10-11
10-12
10-13
Fig.2 Capacitance vs. Reverse Voltage
Reverse voltage VR (V)
Fig.1 Reverse Current vs. Reverse Voltage
Reverse voltage VR (V)
Revers
e c
urr
ent I R
(
A)
Capacitance C
(
pF
)
80
HVD362, HVC362, HVU362 Variable Capacitance Diode for VCO
Features • High capacitance ratio. (n = 3.0 min) • Good C-V linearity.
Ordering Information and Pin Arrangement
1 2V2
Package Name : UFP
Package Code : PWSF0002ZA-A
Package Name : SFP
Package Code: PUSF0002ZB-A
1 2
HVC362BTRF, HVC362KRFHVD362KRF HVU362TRF
Package Name : URP
Package Code : PTSP0002ZA-A
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
1 2V2
Cathode mark
Mark
1. Cathode
2. Anode
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
KRF (8,000 pcs / reel)
A2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 10 V Reverse current IR2 — — 100
nA VR = 10 V, Ta = 60°C
C1 41.6 — 49.9 VR = 1 V, f = 1 MHz Capacitance C4 10.1 — 14.8
pF VR = 4 V, f = 1 MHz
Capacitance ratio n 3.0 — — — C1 / C4 Series resistance rS — — 2.0 Ω VR = 4 V, f = 100 MHz ESD-Capability *1 — 80 — — V C = 200pF,Both forward and
reverse direction 1 pulse. Notes: 1. Failure criterion ; IR ≥ 20nA at VR = 10 V 2. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVD362, HVC362, HVU362
81
Main Characteristics
0 4 8 12 16 20 1.0
20
00.1 10
40
60
80
101.0 1000
0.4
0.8
1.2
1.6
2.0
0.2
0.6
1.0
1.4
1.8
0
10–9
10–10
10–11
10–12
10–13
Re
ve
rse
cu
rre
nt I R
(
A)
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltageC
ap
acita
nce
C
(
pF
)
f = 1MHz
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)L
F =
Δ(L
og
C)/Δ
(Lo
gV
R)
Fig.4 Linearity factor vs. Reverse voltage
Reverse voltage VR (V)
1.0 100.1
–1.5
–2.0
–1.0
–0.5
f = 1MHzf = 100MHz
Se
rie
s r
esis
tan
ce
r
S (Ω
)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
82
HVC383B, HVU383B Variable Capacitance Diode for VCO
Features • High capacitance ratio. (n = 2.0 min) • Low series resistance. (rs = 0.5 Ω max) • Good C-V linearity.
Ordering Information and Pin Arrangement
1 2F4
Package Name : UFP
Package Code : PWSF0002ZA-A
HVC383BTRF, HVC383BKRF HVU383BTRF
Package Name : URP
Package Code : PTSP0002ZA-A
Cathode mark
Mark
1. Cathode
2. Anode
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
1 2F4
Cathode mark
Mark
1. Cathode
2. Anode
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 nA VR = 15 V Reverse current IR2 — — 100 VR = 15 V, Ta = 60°C C1 19.0 — 21.0 VR = 1 V, f = 1 MHz C4 8.50 — 10.0 VR = 4 V, f = 1 MHz
Capacitance
C7 4.50 — 2.5
pF
VR = 7 V, f = 1 MHz n1 2.00 — — — C1/C4 Capacitance ratio n2 3.50 — — — C1/C7
Series resistance rs — — 0.5 Ω VR = 1 V, f = 470 MHz Note: 1. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVC383B, HVU383B
83
Main Characteristics
0.1
0.8
0.4
0.1 1.0 10
0.2
0.6
0.1 1.0 10
40
20
0
10
30
1.0 100 16 204 8 12
Ta=75°C
Ta=50°C
Ta=25°C
Revers
e c
urr
ent I R
(
A)
10–13
10–11
10–12
10–9
10–10
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
10–8
10–6
10–7
f = 1MHz
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)C
apacitance C
(
pF
)
–1.4
–0.6
–0.2
–1.0
LF =
Δ(L
og
C)/Δ
(LogV
R)
Reverse voltage VR (V)
Fig.4 Linearity factor vs. Reverse voltage
0
f = 470MHz
Series r
esis
tance r
S (Ω
)
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
84
HVD365, HVC365 Variable Capacitance Diode for VCO
Features • High capacitance ratio and good C-V linearity.
Ordering Information and Pin Arrangement
1 2V6
HVC365TRF, HVC365KRF
1 2
HVD365KRF
H
Cathode mark
Mark
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Package Name : SFP
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : UFP
Package Code : PWSF0002ZA-A
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR =10 V Reverse current IR2 — — 100
nA VR = 10 V, Ta = 60°C
C1 27.05 — 28.55 VR = 1 V, f = 1 MHz Capacitance C4 6.05 — 7.55
pF VR = 4 V, f = 1 MHz
Capacitance ratio n 3.00 — — — C1 / C4 Series resistance rS — — 1.50 Ω VR = 4 V, f = 100 MHz ESD-Capability *1 — 200 — — V C = 200 pF , R = 0 Ω, Both forward
and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR ≥ 20 nA at VR = 10 V 2. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVD365, HVC365
85
Main Characteristics
1.0 10
30
5
030
15
20
25
f=1MHz
10
0 20161284
10-10
10-12
10-13
10-14
10-11
Fig.2 Capacitance vs. Reverse Voltage
Reverse voltage VR (V)
Fig.1 Reverse Current vs. Reverse Voltage
Reverse voltage VR (V)
Revers
e c
urr
ent I R
(
A)
Capacitance C
(
pF
)
86
HVL368C, HVD368B, HVC368B Variable Capacitance Diode for VCO
Features • Narrow terminal Capacitance deviation. • Low series resistance. (rs = 1.1 Ω max) • Good C-V linearity.
Ordering Information and Pin Arrangement
1 2B4
Package Name : UFP
Package Code : PWSF0002ZA-A
Package Name : SFP
Package Code: PUSF0002ZB-A
1 2
HVC368BTRF, HVC368BKRFHVD368BKRF
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : EFP
Package Code: PUSF0002ZB-A
1 2C
HVL368CKRF
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
KRF (10,000 pcs / reel)
E
TRF (4,000 pcs / reel)KRF (8,000 pcs / reel)
Taping Abbreviation (Quantity)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 10 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 10 V Reverse current IR2 — — 100
nA VR = 10 V, Ta = 60°C
C1 15.0 — 16.5 VR = 1 V, f = 1 MHz C2 9.0 — 10.2 VR = 2 V, f = 1 MHz
Capacitance
C3 5.0 — 6.0
pF
VR = 3 V, f = 1 MHz Capacitance ratio n 2.2 — — — C1 / C3 Series resistance rS — — 1.1 Ω VR = 2 V, f = 470 MHz Note: In the EFP, SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting
plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVL368C, HVD368B, HVC368B
87
Main Characteristics
Re
ve
rse
cu
rre
nt
I R
(
A)
Ca
pa
cita
nce
C
(
pF
)
Se
rie
s r
esis
tan
ce
r
S
(Ω
)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.0 100.1
0 5 10 15
25
5
0
10
15
20
1.0 100.1
10–10
10–11
10–12
10–13
10–14
f = 1MHz
f = 470MHz
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
88
HVD374B, HVC374B Variable Capacitance Diode for VCO
Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage.
Ordering Information and Pin Arrangement
1 2B6
HVC374BTRF, HVC374BKRF
1 2
HVD374BKRF
Y
Cathode mark
Mark
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Package Name : SFP
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : UFP
Package Code : PWSF0002ZA-A
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit Reverse voltage VR 10 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 10 V Reverse current IR2 — — 100
nA VR = 10 V, Ta = 60°C
C1 21.50 — 24.00 VR = 1 V, f = 1 MHz Capacitance C2 12.50 — 14.50
pF VR = 2 V, f = 1 MHz
Capacitance ratio n 1.680 — 1.750 — C1/C2 Series resistance rs — — 1.20 Ω VR = 1 V, f = 470 MHz Note: The material of lead is exposed for cutting plane. Therefore, soldering nature of lead tip part is considered as
unquestioned. Please kindly consider soldering nature.
HVD374B, HVC374B
89
Main Characteristics
Fig.4 Linearity factor vs. Reverse voltage
0
0.2
0.4
0.6
0.8
1.0
f = 470MHz
Reverse voltage VR (V)
1.2
1.0 100.1
LF =
D(L
og
C)/
D(L
og
VR
)
1.0 10–1.5
–1.0
–0.5
0
0 5 10 15 1.0 10
25
5
040
10
15
20
f = 1MHz
100
10–14
10–13
10–10
10–11
10–12
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
Se
rie
s r
esis
tan
ce
r
S (Ω
)
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Ca
pa
cita
nce
C
(
pF
)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
90
HVL375C, HVC375B Variable Capacitance Diode for VCO
Features • Narrow terminal Capacitance deviation. • Low series resistance. (rs = 1.1 Ω max) • Good C-V linearity.
Ordering Information and Pin Arrangement
1 2H
Cathode mark
Mark
1. Cathode
2. Anode
Package Code: PXSF0002ZA-A
HVL375CKRF
Taping Abbreviation (Quantity)
KRF (10,000 pcs / reel)
Package Name : EFP
1 2B8
HVC375BTRF, HVC375BKRF
Cathode mark
Mark
1. Cathode
2. Anode
Package Name : UFP
Package Code : PWSF0002ZA-A
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 10 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 10 V Reverse current IR2 — — 100
nA VR = 10 V, Ta = 60°C
C1 15.0 — 16.5 VR = 1 V, f = 1 MHz C3 5.0 — 6.0 VR = 3 V, f = 1 MHz
Capacitance
C4 3.3 — 4.0
pF
VR = 4 V, f = 1 MHz Capacitance ratio n 4.0 — — — C1 / C4 Series resistance rS — — 1.1 Ω VR = 2 V, f = 470 MHz Note: In the EFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVL375C, HVC375B
91
Main Characteristics
0
1.2
0.4
0.1 1.0 10
0.2
0.6
Se
rie
s r
esis
tan
ce
r
s
(Ω
)
0.8
1.0
0.1 1.0 100 15
10–10
5 1010–14
10–12
10–11
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
10–13
25
5
0
10
15
20
f = 1MHz
f = 470MHz
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt
I R
(
A)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)C
ap
acita
nce
C
(
pF
)
92
HVD376B, HVC376B Variable Capacitance Diode for VCO
Features • High capacitance ratio (n = 4.3min) and good C-V linearity. • High Q circuit can be composed due to low series resistance. (rs = 0.8 Ω max) • To be usable at low voltage.
Ordering Information and Pin Arrangement
1 2B9
HVC376BTRF, HVC376BKRF
1 2
HVD376BKRF
B1
Cathode mark
Mark
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Package Name : SFP
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : UFP
Package Code : PWSF0002ZA-A
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR =10 V Reverse current IR2 — — 100
nA VR = 10 V, Ta = 60°C
C0.2 39.5 — 44.5 VR = 0.2V, f = 1MHz C1 25.0 — 28.5 VR = 1V, f = 1MHz C2.3 8.75 — 12.05 VR = 2.3V, f = 1MHz
Capacitance
C4 4.80 — 6.80
pF
VR = 4V, f = 1MHz n1 4.30 — — — C1/C4 Capacitance ratio n2 3.55 — — — C0.2/C2.3
Series resistance rS — — 0.8 Ω VR = 1 V, f = 470 MHz Note: In the SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVD376B, HVC376B
93
Main Characteristics
0 4 8 12 16 20 1.0
50
10
010
20
30
40
0
0.1
f = 1MHz
1.00.1 10
0.6
0.2
0.1
0.3
0.4
0.5
Ca
pa
cita
nce
C
(p
F)
10–13
10–11
10–12
10–9
10–10
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Se
rie
s r
esis
tan
ce
r
S (Ω
)
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
f = 470MHz
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
94
HVD385B, HVC385B Variable Capacitance Diode for VCO
Features • High capacitance ratio. (n = 2.43 min) • Low series resistance. (rs = 0.75 Ω max)
Ordering Information and Pin Arrangement
1 2F6
HVC385BTRF, HVC385BKRF
1 2
HVD385BKRF
M
Cathode mark
Mark
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Package Name : SFP
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : UFP
Package Code : PWSF0002ZA-A
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 10 V Reverse current IR2 — — 100
nA VR = 10 V, Ta = 60°C
C0.5 7.20 — 7.70 VR = 0.5 V, f = 1 MHz Capacitance C2.5 2.70 — 3.20
pF VR = 2.5 V, f = 1 MHz
Capacitance ratio n 2.43 — 2.57 — C0.5 / C2.5 Series resistance rS — — 0.75 Ω VR = 1 V, f = 470 MHz Note: In the SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVD385B, HVC385B
95
Main Characteristics
0.1 1.0–1.4
–0.8
0
–1.0
–0.6
–0.4
–0.2
0 5
12
10
8
4
2
6
0
Ca
pa
cita
nce
C
(
pF
)
1.0
0.4
01.0 3.0 5.0
0.2
0.6
0.8
0 510–14
10–12
10–13
10 15
10–10
10–11
10.0
LF =
∆(L
og
C)/∆
(Lo
gV
R)
Se
rie
s re
sis
tan
ce
r
S
(Ω
)
Reverse voltage VR (V)
Fig.4 Linearity factor vs. Reverse voltage
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
f=470MHz
2.0 4.00
Reverse voltage VR (V)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
f=1MHz
1 2 3 4
–1.2
96
HVC386B Variable Capacitance Diode for VCO
Features • High capacitance ratio. (n = 1.80 min) • Low series resistance. (rs = 0.85Ω max) • Ultra small Flat Lead Package (UFP) is suitable for compact and high-density surface mount design.
Ordering Information AND Pin Arrangement
1 2
Cathode mark
Mark
1. Cathode
2. Anode
F7
Package Code: PWSF0002ZA-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : UFP
HVC386BTRF, HVC386BKRF
TRF (4,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR =15 V Reverse current IR2 — — 100
nA VR = 15 V, Ta = 60°C
C1 43.0 — 49.0 VR = 1 V, f = 1 MHz Capacitance C4 18.5 — 25.5
pF VR = 4 V, f = 1 MHz
Capacitance ratio n 1.80 — — — C1 / C4 Series resistance rS — — 0.85 Ω VR = 5 V, f = 470 MHz Note: In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,
the solderability of the lead tip has been ignored. Please test and confirm before use.
HVC386B
97
Main Characteristics
301.0 10
60
50
20
10
00.5
30
40
f=1MHz
301.0 100.5
0 5
10–12
10–13
10 15
10–10
10–11
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Revers
e c
urr
ent I R
(
A)
Capacitance C
(
pF
)Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
–2.0
–1.5
–0.5
–1.0
0
0.5 1.0 10 30
Fig.4 Linearity factor vs. Reverse voltage
Reverse voltage VR (V)
LF =
∆(L
og
C)/∆
(LogV
R)
1.0
0.4
0
0.2
0.6
0.8
Series re
sis
tance r
S (Ω
)
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
f=470MHz
10–14
98
HVD358B, HVC358B Variable Capacitance Diode for VCO
Features • High capacitance ratio. (n = 2.20 min) • Low series resistance. (rs = 0.40 Ω max) • Good C-V linearity.
Ordering Information and Pin Arrangement
1 2B2
HVC358BTRF, HVC358BKRF
1 2
HVD358BKRF
C
Cathode mark
Mark
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Package Name : SFP
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : UFP
Package Code : PWSF0002ZA-A
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 15 V Reverse current IR2 — — 100
nA VR = 15 V, Ta = 60°C
C1 19.5 — 21.0 VR = 1 V, f = 1 MHz Capacitance C4 8.00 — 9.30
pF VR = 4 V, f = 1 MHz
Capacitance ratio n 2.20 — — — C1 / C4 Series resistance rS — — 0.40 Ω VR = 1 V, f = 470 MHz Note: In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVD358B, HVC358B
99
Main Characteristics
0 16 204 8 12 1.0 10
30
25
20
10
5
15
0
f=1MHz
0.4
0.2
00.1 1.0 10
0.1
0.3
10−8
10−10
10−12
10−15
10−14
10−13
10−9
10−11
Re
ve
rse
cu
rre
nt
IR
(A
)
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
0.1
Fig.4 LF vs. Reverse voltage
Reverse voltage VR (V)
-1.5
-1.0
-0.5
0
LF =
∆(L
og
C)/∆
(Lo
gV
R)
0.1 1.0 10
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
f=470MHz
Se
rie
s r
esis
tan
ce
r S
(Ω
)
100
HVL396C, HVD396C Variable Capacitance Diode for VCO
Features • High capacitance ratio. (n = 2.62 min) • Low series resistance. (rs = 0.40 Ω max)
Ordering Information and Pin Arrangement
1 27 1 2
HVD396CKRF
Cathode mark
Mark
Cathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
Package Code: PXSF0002ZA-A
HVL396CKRF
Taping Abbreviation (Quantity)
KRF (10,000 pcs / reel)
Package Name : SFP
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : EFP
U
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 10 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 10 V Reverse current IR2 — — 50
nA VR = 10 V, Ta = 60°C
C1 14.6 — 15.8 VR = 1 V, f = 1 MHz Capacitance C4 5.20 — 5.80
pF VR = 4 V, f = 1 MHz
Capacitance ratio n 2.62 — — — C1 / C4 Series resistance rS — — 0.40 Ω VR = 1 V, f = 470 MHz Note: In the EFP and SFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVL396C, HVD396C
101
Main Characteristics
10–14
10–12
10–13
10–10
10–11
0 5 10 15
0 1.0 6.02.0 3.0 4.0 5.0
0.45
0.25
0.15
0.20
0.30
0.35
0.40
f=470MHz
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt
I R
(
A)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)C
ap
acita
nce
C
(
pF
)
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Se
rie
s r
esis
tan
ce
r
S
(Ω
)30
25
20
10
5
15
00 54321
f=1MHz
102
HVL399C, HVD399C Variable Capacitance Diode for VCO
Features • High capacitance ratio. (n = 2.30 to 2.46) • Low series resistance. (rs = 0.40 Ω max)
Ordering Information and Pin Arrangement
1 26 1 2
HVD399CKRF
Cathode mark
Mark
Cathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
Package Code: PXSF0002ZA-A
HVL399CKRF
Taping Abbreviation (Quantity)
KRF (10,000 pcs / reel)
Package Name : SFP
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : EFP
A3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 10 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 10 V Reverse current IR2 — — 50
nA VR = 10 V, Ta = 60°C
C0.5 18.5 — 20.0 VR = 0.5V, f = 1 MHz Capacitance C2.5 7.30 — 8.60
pF VR = 2.5 V, f = 1 MHz
Capacitance ratio n 2.30 — 2.46 — C0.5 / C2.5 Series resistance rS — — 0.40 Ω VR = 1 V, f = 470 MHz Note: In the EFP and SFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVL399C, HVD399C
103
Main Characteristics
10–13
10–11
10–12
10–9
10–10
0 5 10 15
0 1 62 3 4 5
0.30
0.20
0.15
0.25
0 531 2 4
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)C
ap
acita
nce
C
(
pF
)
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Series r
esis
tance
rS
(Ω
)
f = 470MHz
10
5
20
15
25
30
0
f = 1MHz
104
RKV600KP, HVL355C Variable Capacitance Diode for VCO
Features • High capacitance ratio. (n = 2.35 min) • Low series resistance. (rs = 0.60 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive.( RKV600KP)
Ordering Information and Pin Arrangement
B1 2
HVL355CKRF
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Package Code: PXSN0002ZB-A
RKV600KP R
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : EFP
Package Code: PXSF0002ZA-A
Taping Abbreviation (Quantity)
KRF (10,000 pcs / reel)
Package Name : MP6
1
Cathode mark
Mark
21
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 15 V Reverse current IR2 — — 100
nA VR = 15 V, Ta = 60°C
C1 6.62 — 7.02 VR = 1 V, f = 1 MHz Capacitance C4 2.60 — 2.95
pF VR = 4 V, f = 1 MHz
Capacitance ratio n 2.35 — 2.55 — C1 / C4 Series resistance rS — — 0.60 Ω VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,
the solderability of the lead tip has been ignored. Please test and confirm before use.
RKV600KP, HVL355C
105
Main Characteristics
Se
rie
s r
esis
tan
ce
r
S
(Ω
)
0 16 20
10–6
10–8
10–10
4 8 1210
–13
10–12
10–11
10–7
10–9
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)C
ap
acita
nce
C
(
pF
)
Ta = 75°C
Ta = 25°C
0
0.6
0.2
0.4
f = 470MHz
0.8
0 54321
1.0
12
10
8
4
2
6
00 54321
f = 1MHz
106
HVL358C Variable Capacitance Diode for VCO
Features • High capacitance ratio. (n = 2.20 min) • Low series resistance. (rs = 0.40 Ω max) • Good C-V linearity • Extremely small Flat Lead Package (EFP) is suitable for compact and high-density surface mount design.
Ordering Information and Pin Arrangement
Cathode mark
Mark
1. Cathode
2. Anode
1 28
HVL358CKRF
Package Name : EFP
Package Code : PXSF0002ZA-A
Taping Abbreviation (Quantity)
KRF (10,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 15 V Reverse current IR2 — — 100
nA VR = 15 V, Ta = 60°C
C1 19.50 — 20.90 VR = 1 V, f = 1 MHz Capacitance C4 8.30 — 8.95
pF VR = 4 V, f = 1 MHz
Capacitance ratio n 2.20 — 2.43 — C1 / C4 Series resistance rS — — 0.40 Ω VR = 1 V, f = 470 MHz Note: In the EFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,
the solderability of the lead tip has been ignored. Please test and confirm before use.
HVL358C
107
Main Characteristics
0 16 204 8 12
0.4
0.2
00.1 1.0 10
0.1
0.3
10–11
10–10
10–9
10–8
10–13
10–12
10–15
10–14
f=470MHz
0.1 1.0 10
30
25
20
10
5
15
0
Ca
pa
cita
nce
C
(
pF
)
Fig.2 Capacitance vs. Reverse Voltage
Reverse voltage VR (V)
f=1MHz
Se
rie
s r
esis
tan
ce
r
S
(Ω
)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
Re
ve
rse
cu
rre
nt I R
(
A)
108
RKV601KP, HVL385C Variable Capacitance Diode for VCO
Features • High capacitance ratio. (n = 2.43 min) • Low series resistance. (rs = 0.75 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive.(RKV601KP)
Ordering Information and Pin Arrangement
T1 1 2
HVL385CKRF
Cathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
Package Code: PXSN0002ZB-A
RKV601KP R
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : EFP
Package Code: PXSF0002ZA-A
Taping Abbreviation (Quantity)
KRF (10,000 pcs / reel)
Package Name : MP6
Cathode mark
Mark
22
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 10 V Reverse current IR2 — — 100
nA VR = 10 V, Ta = 60°C
C0.5 7.30 — 7.70 VR = 0.5 V, f = 1 MHz Capacitance C2.5 2.90 — 3.18
pF VR = 2.5 V, f = 1 MHz
Capacitance ratio n 2.43 — 2.57 — C0.5 / C2.5 Series resistance rS — — 0.75 Ω VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,
the solderability of the lead tip has been ignored. Please test and confirm before use.
RKV601KP, HVL385C
109
Main Characteristics
0
0.6
0.2
0.4
12
10
8
4
2
6
00 16 20
10–6
10–8
10–10
4 8 1210–13
10–12
10–11
10–7
10–9
Ta = 75°C
Ta = 25°C
f = 470MHz
f = 1MHzf=1MHz
0 54321
0.8
0 54321
9
7
3
1
5
11
1.0
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Ca
pa
cita
nce
C
(
pF
)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Se
rie
s re
sis
tan
ce
r
S (Ω
)
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
110
RKV603KP, RKV603KL Variable Capacitance Diode for VCO
Features • High capacitance ratio. (n = 2.10 to 2.40) • Low series resistance. (rs = 0.75 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive.(RKV603KP)
Ordering Information and Pin Arrangement
91 1 2
RKV603KL R
Cathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
Package Code: PXSN0002ZB-A
RKV603KP R
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : EFP
Package Code: PXSF0002ZA-A
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : MP6
Cathode mark
Mark
2B
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 10 V Reverse current IR2 — — 100
nA VR = 10 V, Ta = 60°C
C0.5 7.38 — 7.92 VR = 0.5 V, f = 1 MHz Capacitance C2.5 3.26 — 3.58
pF VR = 2.5 V, f = 1 MHz
Capacitance ratio n 2.10 — 2.40 — C0.5/C2.5 Series resistance rS — — 0.75 Ω VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,
the solderability of the lead tip has been ignored. Please test and confirm before use.
RKV603KP, RKV603KL
111
Main Characteristics S
erie
s r
esis
tan
ce
r
S
(Ω
)10–6
10–8
10–10
10–13
10–12
10–11
10–7
10–9
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)C
ap
acita
nce
C
(
pF
)
0
0.6
0.2
0.4
0.8
0 54321
1.0
f = 470MHz
0
2
4
6
8
0.1 1 10
f = 1MHz
10
0 15 205 10
112
RKV604KP, RKV604KL Variable Capacitance Diode for VCO
Features • High capacitance ratio. (n = 1.73 to 2.10) • Low series resistance. (rs = 0.70 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive.(RKV604KP)
Ordering Information and Pin Arrangement
A1 1 2
RKV604KL R
Cathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
Package Code: PXSN0002ZB-A
RKV604KP R
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : EFP
Package Code: PXSF0002ZA-A
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : MP6
Cathode mark
Mark
2C
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 15 V Reverse current IR2 — — 50
nA VR = 15 V, Ta = 60°C
C1 2.35 — 2.70 VR = 1 V, f = 1 MHz Capacitance C3 1.22 — 1.42
pF VR = 3 V, f = 1 MHz
Capacitance ratio n 1.73 — 2.10 — C1/C3 Series resistance rS — — 0.70 Ω VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP, package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
RKV604KP, RKV604KL
113
Main Characteristics
Se
rie
s r
esis
tan
ce
r
S
(Ω
)
0 16 20
10–6
10–8
10–10
4 8 1210–13
10–12
10–11
10–7
10–9
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)C
ap
acita
nce
C
(
pF
)
0
0.6
0.2
0.4
0.8
0 54321
1.0
f = 470MHz
0.1 1 10
f = 1MHz
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
114
RKV605KP, RKV605KL Variable Capacitance Diode for VCO
Features • High capacitance ratio. (n = 2.02 to 2.26) • Low series resistance. (rs = 0.40 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive.(RKV605KP)
Ordering Information and Pin Arrangement
B1 1 2
RKV605KL R
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Package Code: PXSN0002ZB-A
RKV605KP R
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : EFP
Package Code: PXSF0002ZA-A
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : MP6
Cathode mark
Mark
2D
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 10 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 10 V Reverse current IR2 — — 50
nA VR = 10 V, Ta = 60°C
C0.5 18.5 — 20.0 VR = 0.5 V, f = 1 MHz Capacitance C2.5 8.55 — 9.45
pF VR = 2.5 V, f = 1 MHz
Capacitance ratio n 2.02 — 2.26 — C0.5/C2.5 Series resistance rS — — 0.40 Ω VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP, package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
RKV605KP, RKV605KL
115
Main Characteristics
Se
rie
s r
esis
tan
ce
r
S
(Ω
)
10–6
10–8
10–10
10–13
10–12
10–11
10–7
10–9
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)C
ap
acita
nce
C
(
pF
)
00 54321
f = 470MHz
0.1 1 10
f = 1MHz
0 15 205 10
1.2
0.4
0.2
0.6
0.8
1.0
f = 470MHz
30
25
20
10
5
15
0
116
RKV606KP, RKV606KL Variable Capacitance Diode for VCO
Features • High capacitance ratio. (n = 1.81 to 2.08) • Low series resistance. (rs = 0.75 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive.(RKV606KP)
Ordering Information and Pin Arrangement
C1 1 2
RKV606KL R
Cathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
Package Code: PXSN0002ZB-A
RKV606KP R
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : EFP
Package Code: PXSF0002ZA-A
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : MP6
Cathode mark
Mark
2H
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 15 V Reverse current IR2 — — 50
nA VR = 15 V, Ta = 60°C
C1 3.18 — 3.50 VR = 1 V, f = 1 MHz Capacitance C3 1.63 — 1.80
pF VR = 3 V, f = 1 MHz
Capacitance ratio n 1.81 — 2.08 — C1/C3 Series resistance rS — — 0.75 Ω VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP, package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
RKV606KP, RKV606KL
117
Main Characteristics
Se
rie
s r
esis
tan
ce
r
S
(Ω
)10–6
10–8
10–10
10–13
10–12
10–11
10–7
10–9
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)C
ap
acita
nce
C
(
pF
)
00 54321
f = 470MHz
f = 1MHz
0 15 205 10
0.2
0.1
0.3
0.4
0.5
f = 470MHz
6
5
4
2
1
3
0
0.7
0.6
1 52 3 40
118
RKV607KP, RKV607KL Variable Capacitance Diode for VCO
Features • High capacitance ratio. (n = 1.75 to 2.00) • Low series resistance. (rs = 0.85 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive.(RKV607KP)
Ordering Information and Pin Arrangement
D1 1 2
RKV607KL R
Cathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
Package Code: PXSN0002ZB-A
RKV607KP R
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : EFP
Package Code: PXSF0002ZA-A
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : MP6
Cathode mark
Mark
2J
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 15 V Reverse current IR2 — — 50
nA VR = 15 V, Ta = 60°C
C1 2.03 — 2.20 VR = 1 V, f = 1 MHz Capacitance C3 1.05 — 1.20
pF VR = 3 V, f = 1 MHz
Capacitance ratio n 1.75 — 2.00 — C1/C3 Series resistance rS — — 0.85 Ω VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP, package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
RKV607KP, RKV607KL
119
Main Characteristics
Se
rie
s r
esis
tan
ce
r
S
(Ω
)
0 16 20
10–6
10–8
10–10
4 8 1210–13
10–12
10–11
10–7
10–9
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)C
ap
acita
nce
C
(
pF
)
0
0.6
0.2
0.4
0.8
0 54321
1.0
f = 470MHz
f = 1MHz
04 51 2 30
1
2
3
4
5
120
RKV608KP, RKV608KL Variable Capacitance Diode for VCO
Features • High capacitance ratio. (n = 2.13 to 2.27) • Low series resistance. (rs = 0.75 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive.(RKV608KP)
Ordering Information and Pin Arrangement
E1 1 2
RKV608KL R
Cathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
Package Code: PXSN0002ZB-A
RKV608KP R
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : EFP
Package Code: PXSF0002ZA-A
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : MP6
Cathode mark
Mark
2N
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 15 V Reverse current IR2 — — 50
nA VR = 15 V, Ta = 60°C
C1 4.18 — 4.52 VR = 1 V, f = 1 MHz Capacitance C4 1.85 — 2.11
pF VR = 4 V, f = 1 MHz
Capacitance ratio n 2.13 — 2.27 — C1/C4 Series resistance rS — — 0.75 Ω VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP, package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
RKV608KP, RKV608KL
121
Main Characteristics
Se
rie
s r
esis
tan
ce
r
S
(Ω
)
0 16 20
10–6
10–8
10–10
4 8 1210–13
10–12
10–11
10–7
10–9
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)C
ap
acita
nce
C
(
pF
) 5
4
2
1
3
01 52 3 4
6
0
f = 1MHz
7
0.7
0.3
00 1 5
0.1
0.4
0.5
0.6
f = 470MHz
2 3 4
0.2
0.8
122
HVB350BYP Silicon Epitaxial Planar Variable Capacitance Diode for VCO
Features • High capacitance ratio. (n = 2.8 min) • Low series resistance. (rs = 0.5 max) • Good C-V linearity. • CMPAK-4 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information and Pin Arrangement
1. Anode
2. Anode
3. Cathode
4. Cathode(Top View) (Top View)
21
34
V1
21
34HVB350BYPTR
Package Name : CMPAK-4
Package Code : PTSP0004ZB-A
Taping Abbreviation (Quantity)
TR (3,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 15 V Reverse current IR2 — — 100
nA VR = 15 V, Ta = 60°C
C1 15.5 — 17.0 VR = 1 V, f = 1 MHz Capacitance C4 5.0 — 6.0
pF VR = 4 V, f = 1 MHz
Capacitance ratio n 2.8 — — — C1 / C4 Series resistance rs — — 0.5 Ω VR = 1 V, f = 470 MHz Note: 1. Per one device.
HVB350BYP
123
Main Characteristics
0 16 20
10-6
10-8
10-10
4 8 1210-13
10-12
10-11
10-7
10-9
0.1 1.0 10
30
25
20
10
5
15
0
f=1MHz
1.0 100
0.1
0.2
0.3
0.4
0.5
0.5
30
f=470MHz
0.1 1.0 10-1.5
-1.0
-0.5
0
Ca
pa
cita
nce
C
(
pF
)L
F =
∆(L
og
C)
/ ∆
(Lo
g V
R)
Se
rie
s r
esis
tan
ce
r
S
(Ω
)
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Fig.4 LF vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt
I R
(
A)
124
RKV650KP, RKV650KL Variable Capacitance Diode for Digital Audio
Features • Most suitable for terrestrial digital TV broadcasts capable Mobile phones. • High capacitance ratio. (n = 3.25 min) • Low series resistance. (rs = 0.75 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. (RKV650KP)
Ordering Information and Pin Arrangement
31 1 2
RKV650KL R
Cathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
Package Code: PXSN0002ZB-A
RKV650KP R
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : EFP
Package Code: PXSF0002ZA-A
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : MP6
Cathode mark
Mark
29
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 10 V Reverse current IR2 — — 100
nA VR = 10 V, Ta = 60°C
C0.5 7.20 — 7.80 VR = 0.5 V, f = 1 MHz Capacitance C2.5 2.05 — 2.35
pF VR = 2.5 V, f = 1 MHz
Capacitance ratio n 3.25 — 3.70 — C0.5 / C2.5 Series resistance rS — — 0.75 Ω VR = 1 V, f = 470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP, package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
RKV650KP, RKV650KL
125
Main Characteristics
0.1 1.0 10
12
10
8
4
2
6
0
f=1MHz
Ca
pa
cita
nce
C
(
pF
)
0 410–13
10–11
10–12
8
10–9
10–10
Se
rie
s re
sis
tan
ce
r
S
(Ω
)
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
2 6 10
0
0.1
0.2
0.3
0.4
0.5
0.6
1.0 100.1
f = 470MHz
0.7
126
RKV652KP, RKV652KL Variable Capacitance Diode for Digital Audio
Features • Most suitable for terrestrial digital TV broadcasts capable Mobile phones. • High capacitance ratio. (n = 2.28 to 2.90) • Low series resistance. (rs = 1.1 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. (RKV652KP)
Ordering Information and Pin Arrangement
71 1 2
RKV652KL R
Cathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
Package Code: PXSN0002ZB-A
RKV652KP R
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : EFP
Package Code: PXSF0002ZA-A
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : MP6
Cathode mark
Mark
2E
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 10 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 10 V Reverse current IR2 — — 100
nA VR = 10 V, Ta = 60°C
C1 2.90 — 3.30 VR = 1 V, f = 1 MHz Capacitance C3 1.12 — 1.30
pF VR = 3 V, f = 1 MHz
Capacitance ratio n 2.28 — 2.90 — C1/C3 Series resistance rS — — 1.1 Ω VR = 1 V, f =470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP, package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
RKV652KP, RKV652KL
127
Main Characteristics
Se
rie
s r
esis
tan
ce
r
S
(Ω
)
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)C
ap
acita
nce
C
(
pF
)
10–11
10–10
10–12
10–13
10–14
6
1
0
3
4
5
f=1MHz
2
10 2 3
0.3
0.4
0.5
0.6
0.7
0.8
0.9
f = 470MHz
0 1 2 3
0 8 102 4 6
128
RKV653KP, RKV653KL Variable Capacitance Diode for Digital Audio
Features • Most suitable for terrestrial digital TV broadcasts capable Mobile phones. • High capacitance ratio. (n = 2.40 to 3.05) • Low series resistance. (rs = 1.8 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. (RKV653KP)
Ordering Information and Pin Arrangement
81 1 2
RKV653KL R
Cathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
Package Code: PXSN0002ZB-A
RKV653KP R
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : EFP
Package Code: PXSF0002ZA-A
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : MP6
Cathode mark
Mark
2F
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 10 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 10 V Reverse current IR2 — — 100
nA VR = 10 V, Ta = 60°C
C1 2.60 — 2.90 VR = 1 V, f = 1 MHz Capacitance C3 0.97 — 1.08
pF VR = 3 V, f = 1 MHz
Capacitance ratio n 2.40 — 3.05 — C1/C3 Series resistance rS — — 1.8 Ω VR = 1 V, f =470 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP, package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
RKV653KP, RKV653KL
129
Main Characteristics
Se
rie
s r
esis
tan
ce
r
S
(Ω
)
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)C
ap
acita
nce
C
(
pF
)
10–11
10–10
10–12
10–13
10–14
6
1
0
3
4
5
f=1MHz
2
10 2 3
f = 470MHz
0 1 2 30.5
0.7
0.9
1.1
1.3
1.5
1.7
0 8 102 4 6
130
HVC316 Variable Capacitance Diode for BS/CS Tuner
Features • High capacitance ratio (n = 9.0 min) • Low series resistance. (rs = 2.2 Ω max)
Ordering Information and Pin Arrangement
1 2N
HVC316TRF, HVC316KRF
Cathode mark
Mark
1. Cathode
2. Anode
Package Name : UFP
Package Code : PWSF0002ZA-A
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 30 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 30 V Reverse current IR2 — — 100
nA VR = 30 V, Ta = 60°C
C1 5.16 — 7.22 VR = 1 V, f = 1 MHz Capacitance C25 0.48 — 0.76
pF VR = 25V, f = 1 MHz
Capacitance ratio n 9.0 — — — C1 / C25 Series resistance rS — — 2.20 Ω VR = 1 V, f = 470 MHz Matching error ∆C/C *1 — — 6.00 % VR = 1 to 25 V, f = 1 MHz Notes: 1. C.C system (Continuous Connected taping system) enable to make any 10 pcs of ∆C/C continuous in a reel,
expect extention to another group. Calculate Matching Error,
(Cmax – Cmin)
Cmin∆C/C = × 100 (%)
2. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVC316
131
Main Characteristics
0 10 20 30 40 50
Re
ve
rse
cu
rre
nt
IR
(A
)
Fig.1 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
1.0 10
10
2
0
Ca
pa
cita
nce
C
(p
F)
30
4
6
8
1.0 10
2.0
0.4
0
Se
rie
s r
esis
tan
ce
r S
(Ω
)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
0.8
1.2
1.6
1.0 10
0
−1.0
−1.530
−0.5
LF =
∆(L
og
C)/∆
(Lo
gV
R)
10-12
10-11
10-9
10-8
10-7
10-6
10-10
10-13
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Fig.4 Linearity factor vs. Reverse voltage
Reverse voltage VR (V)
f=470MHz
f=1MHz
132
HVD326C, HVC326C, HVU326C Variable Capacitance Diode for UHF/VHF Tuner
Features • Low voltage type (tuning voltage 1 to 10 V), it is suitable for ET without DC/DC converter. • Low series resistance. (rs = 0.6 Ω max) and good C-V linearity.
Ordering Information and Pin Arrangement
1 2A9
Package Name : UFP
Package Code : PWSF0002ZA-A
Package Name : SFP
Package Code: PUSF0002ZB-A
1 2A1
HVC326CTRF, HVC326CKRFHVD326CKRF HVU326CTRF
Package Name : URP
Package Code : PTSP0002ZA-A
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
1 2A9
Cathode mark
Mark
1. Cathode
2. Anode
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 10 V Reverse current IR2 — — 100
nA VR = 10 V, Ta = 60°C
C1 13.0 — 16.0 VR = 1 V, f = 1 MHz Capacitance C10 2.0 — 2.3
pF VR = 10 V, f = 1 MHz
Capacitance ratio n 6.0 — — — C1 / C10 Series resistance rS — — 0.6 Ω VR = 5 V, f = 470 MHz Matching error ∆C/C *2 — — 2.0 % VR = 1 to 10 V, f = 1 MHz Notes: 1. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use. 2. C.C system (Continuous Connected taping system) enable to make any 10 pcs of ∆C/C continuous in a reel,
expect extention to another group. Calculate Matching Error,
∆C/C = × 100 (%)(Cmax – Cmin)
Cmin
HVD326C, HVC326C, HVU326C
133
Main Characteristics
0 10 20 30 40 50 0.1 1.0
25
5
010
10
15
20
0.1 1.0 100
0.2
0.4
0.8
0.6
1.0
f = 1MHz
Se
rie
s r
esis
tan
ce
r S
(Ω
)
Fig.1 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
Re
ve
rse
cu
rre
nt I R
(
A)
10–6
10–8
10–9
10–10
10–13
10–7
10–12
10–11 Ca
pa
cita
nce
C
(p
F)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
f = 470MHz
134
RKV500KK, RKV500KJ, RKV500KG Variable Capacitance Diode for UHF/VHF Tuner
Features • Low series resistance and good C-V linearity.
Ordering Information and Pin Arrangement
1 2E4
Package Name : UFP
Package Code : PWSF0002ZA-A
Package Name : SFP
Package Code: PUSF0002ZB-A
1 2A7
RKV500KJ P, RKV500KJ RRKV500KK R RKV500KG P
Package Name : URP
Package Code : PTSP0002ZA-A
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
P (3,000 pcs / reel)
1 2E4
Cathode mark
Mark
1. Cathode
2. Anode
Taping Abbreviation (Quantity)
P (4,000 pcs / reel)
Taping Abbreviation (Quantity)
R (8,000 pcs / reel)
R (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM * 35 V Reverse voltage VR 34 V Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: RL = 10 kΩ
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 32 V Reverse current IR2 — — 100
nA VR = 32 V, Ta = 60°C
C2 14.15 — 15.75 VR = 2 V, f = 1 MHz Capacitance C25 1.89 — 2.18
pF VR = 25 V, f = 1 MHz
Capacitance ratio n 6.3 — — — C2 / C25 Series resistance rS — — 0.57 Ω VR = 5 V, f = 470 MHz Matching error ∆C/C *1 — — 1.8 % VR = 2 to 25 V, f = 1 MHz Notes: 1. C.C system (Continuous Connected taping system) enable to make any 10 pcs of ∆C/C continuous in a reel,
expect extention to another group. Calculate Matching Error,
∆C/C = × 100 (%)(Cmax – Cmin)
Cmin 2. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
RKV500KK, RKV500KJ, RKV500KG
135
Main Characteristics
0 10 20 30 40 50 1.0 10
25
5
040
10
15
20
1.0 10 400
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1.0 10
0
40
Re
ve
rse
cu
rre
nt
I R
(
A)
10–13
10–11
10–12
10–9
10–10
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
10–8
10–6
10–7
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
f = 1MHz
–1.5
–0.5
–1.0
LF =
∆(L
og
C)/∆
(Lo
gV
R)
Reverse voltage VR (V)
Fig.4 Linearity factor vs. Reverse voltage
Se
rie
s r
esis
tan
ce
r
S
(Ω
)
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
f = 470MHz
136
HVD327C, HVC327C, HVU327C Variable Capacitance Diode for VHF Tuner
Features • Low voltage type (tuning voltage 1 to 10V), it is suitable for ET without DC/DC converter. • High capacitance ratio (n = 11.0 min). • Low series resistance and good C-V linearity.
Ordering Information and Pin Arrangement
1 2E3
Package Name : UFP
Package Code : PWSF0002ZA-A
Package Name : SFP
Package Code: PUSF0002ZB-A
1 2A4
HVC327CTRF, HVC327CKRFHVD327CKRF HVU327CTRF
Package Name : URP
Package Code : PTSP0002ZA-A
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
1 2E3
Cathode mark
Mark
1. Cathode
2. Anode
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 10 V Reverse current IR2 — — 100
nA VR = 10 V, Ta = 60°C
C1 30.5 — 33.5 VR = 1 V, f = 1 MHz Capacitance C10 2.6 — 2.9
pF VR = 10 V, f = 1 MHz
Capacitance ratio n 11.0 — — — C1/C10 Series resistance rS — — 0.8 Ω VR = 5 V, f = 470 MHz Matching error ∆C/C *1 — — 2.0 % VR = 1 to 10 V, f = 1 MHz Notes: 1. C.C system (Continuous Connected taping system) enable to make any 10 pcs of ∆C/C continuous in a reel,
expect extention to another group. Calculate Matching Error,
∆C/C = × 100 (%)(Cmax – Cmin)
Cmin 2. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVD327C, HVC327C, HVU327C
137
Main Characteristics
1.0 100
0.6
0.2
0.8
0.4
0.5
1.0
30
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
f = 470MHz
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Ca
pa
cita
nce
C
(
pF
)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
Se
rie
s
resis
tan
ce
r
S (Ω
)
0 510–13
10–11
10–12
10 15
10–9
10–10
f = 1MHz
1.0 101.0
0.5
10
100
30
f = 1MHz
138
HVD328C, HVC328C, HVU328C Variable Capacitance Diode for VHF Tuner
Features • Low voltage type (tuning voltage 1 to 10 V), it is suitable for ET without DC/DC converter. • High capacitance ratio (n = 14.5 min) and suitable for wide band tuner. • Low series resistance and good C-V linearity.
Ordering Information and Pin Arrangement
1 2V9
Package Name : UFP
Package Code : PWSF0002ZA-A
Package Name : SFP
Package Code: PUSF0002ZB-A
1 2A5
HVC328CTRF, HVC328CKRFHVD328CKRF HVU328CTRF
Package Name : URP
Package Code : PTSP0002ZA-A
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
1 2V9
Cathode mark
Mark
1. Cathode
2. Anode
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 15 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 10 V Reverse current IR2 — — 100
nA VR = 10 V, Ta = 60°C
C1 41.0 — 45.0 VR = 1 V, f = 1 MHz Capacitance C10 2.6 — 2.9
pF VR = 10 V, f = 1 MHz
Capacitance ratio n 14.5 — — — C1/ C10 Series resistance rs — — 1.2 Ω VR = 5 V, f = 470 MHz Matching error ∆C/C *1 — — 2.0 % VR = 1 to 10 V, f = 1 MHz Notes: 1. C.C system (Continuous Connected taping system) enable to make any 10 pcs of ∆C/C continuous in a reel,
expect extention to another group. Calculate Matching
∆C/C = × 100 (%)(Cmax – Cmin)
Cmin 2. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVD328C, HVC328C, HVU328C
139
Main Characteristics
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt
I R
(
A)
Ca
pa
cita
nce
C
(
pF
)Reverse voltage VR (V)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Se
rie
s r
esis
tan
ce
r
S
(Ω
)
0 510–13
10–11
10–12
10 15
10–9
10–10
1.0 100
0.6
0.2
0.8
0.4
0.5
1.0
30
f = 470MHz
1.2
1.0 10
1.0
0.5
10
30
100
f = 1MHz
140
RKV501KK, RKV501KJ, RKV501KG Variable Capacitance Diode for VHF Tuner
Features • High capacitance ratio (n = 11.0 min). • Low series resistance and good C-V linearity.
Ordering Information and Pin Arrangement
1 2E5
Package Name : UFP
Package Code : PWSF0002ZA-A
Package Name : SFP
Package Code: PUSF0002ZB-A
1 2A8
RKV501KJ P, RKV501KJ RRKV501KK R RKV501KG P
Package Name : URP
Package Code : PTSP0002ZA-A
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
P (3,000 pcs / reel)
1 2E5
Cathode mark
Mark
1. Cathode
2. Anode
Taping Abbreviation (Quantity)
P (4,000 pcs / reel)
Taping Abbreviation (Quantity)
R (8,000 pcs / reel)
R (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM * 35 V Reverse voltage VR 34 V Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: RL = 10 kΩ
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 32 V Reverse current IR2 — — 100
nA VR = 32 V, Ta = 60°C
C2 29.5 — 34.0 VR = 2 V, f = 1 MHz Capacitance C25 2.45 — 2.78
pF VR = 25 V, f = 1 MHz
Capacitance ratio n 11.0 — — — C2 / C25 Series resistance rS — — 0.75 Ω VR = 5 V, f = 470 MHz Matching error ∆C/C *1 — — 1.8 % VR = 2 to 25 V, f = 1 MHz Notes: 1. C.C system (Continuous Connected taping system) enable to make any 10 pcs of ∆C/C continuous in a reel,
expect extention to another group. Calculate Matching Error,
∆C/C = × 100 (%)(Cmax – Cmin)
Cmin 2. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
RKV501KK, RKV501KJ, RKV501KG
141
Main Characteristics
0 10 20 30 40 50 1.0 10
60
50
20
10
00.5
30
40
30
1.0 100
0.6
0.2
0.8
0.4
0.5
1.0
30 0.5 101.0 30
10–12
10–13
10–10
10–11
10–7
10–8
10–6
10–9
f = 1MHz
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
–2.0
–1.5
–1.0
–0.5
0.0
f = 470MHz
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Revers
e c
urr
ent I R
(
A)
Capacitance C
(
pF
)
Fig.3 Series resistance vs. Reverse voltage
Reverse voltage VR (V)
Series re
sis
tance r
S (Ω
)
Fig.4 Linearity factor vs. Reverse voltage
Reverse voltage VR (V)
LF =
∆ (
LogC
) / ∆
(LogV
R)
142
RKV502KK, RKV502KJ, RKV502KG Variable Capacitance Diode for VHF Tuner
Features • High capacitance ratio (n = 14.5 min) and suitable for wide band tuner. • Low series resistance and good C-V linearity.
Ordering Information and Pin Arrangement
1 2E6
Package Name : UFP
Package Code : PWSF0002ZA-A
Package Name : SFP
Package Code: PUSF0002ZB-A
1 2A9
RKV502KJ P, RKV502KJ RRKV502KK R RKV502KG P
Package Name : URP
Package Code : PTSP0002ZA-A
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
P (3,000 pcs / reel)
1 2E6
Cathode mark
Mark
1. Cathode
2. Anode
Taping Abbreviation (Quantity)
P (4,000 pcs / reel)
Taping Abbreviation (Quantity)
R (8,000 pcs / reel)
R (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak Reverse voltage VRM * 35 V Reverse voltage VR 34 V Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: RL = 10 kΩ
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 32 V Reverse current IR2 — — 100
nA VR = 32 V, Ta = 60°C
C2 41.5 — 47.0 VR = 2 V, f = 1 MHz Capacitance C25 2.60 — 3.00
pF VR = 25 V, f = 1 MHz
Capacitance ratio n 14.5 — — — C2 / C25 Series resistance rS — — 1.1 Ω VR = 5 V, f = 470 MHz Matching error ∆C/C *1 — — 1.8 % VR = 2 to 25 V, f = 1 MHz Notes: 1. C.C system (Continuous Connected taping system) enable to make any 10 pcs of ∆C/C continuous in a reel,
expect extention to another group. Calculate Matching Error,
∆C/C = × 100 (%)(Cmax – Cmin)
Cmin 2. In the SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
RKV502KK, RKV502KJ, RKV502KG
143
Main Characteristics
0 10 20 30 40 50 1.0 10
60
50
20
10
00.5
30
40
30
f = 1MHz
1.0 100
0.4
0.8
1.2
1.6
0.5
2.0
30
0.2
0.6
1.0
1.4
1.8 f = 470MHz
0.5 1.0 10
-1.5
-1.0
-0.5
0
-2.030
10–6
10–8
10–9
10–10
10–13
10–7
10–12
10–11
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Revers
e c
urr
ent I R
(
A)
Capacitance C
(
pF
)Reverse voltage VR (V)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
Series r
esis
tance r
S (Ω
)
Reverse voltage VR (V)
Fig.4 Linearity factor vs. Reverse voltage
LF =
∆(L
og
C)/∆
(Lo
gV
R)
144
HVC308A Variable Capacitance Diode for TV Tuner
Features • Low series resistance. (rs = 0.95 Ω max)
Ordering Information and Pin Arrangement
1 2V
HVC308ATRF, HVC308AKRF
Cathode mark
Mark
1. Cathode
2. Anode
Package Name : UFP
Package Code : PWSF0002ZA-A
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 35 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition IR1 — — 10 VR = 30 V Reverse current IR2 — — 100
nA VR = 30 V, Ta = 60°C
C2 13.7 — 15.9 VR = 2 V, f = 1 MHz Capacitance C20 1.65 — 2.06
pF VR = 20 V, f = 1 MHz
Capacitance ratio n 7.12 — — — C2/C20 Series resistance rs — — 0.95 Ω VR = 5 V, f = 470 MHz Note: In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,
the solderability of the lead tip has been ignored. Please test and confirm before use.
HVC308A
145
Main Characteristics
0 10 50403020 1.0 10
25
5
040
10
15
20
1.0 10
0.6
0.4
040
0.2
1.2
1.0
0.8
1.0 10
0
40
Re
ve
rse
cu
rre
nt
I R
(
A)
10–13
10–11
10–12
10–9
10–10
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage Fig.2 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
LF =
Δ(L
og
C)/Δ
(Lo
gV
R)
Reverse voltage VR (V)
Fig.4 Linearity factor vs. Reverse voltage
–1.5
–0.5
–1.0
Se
rie
s r
esis
tan
ce
r
S
(Ω
)
Reverse voltage VR (V)
Fig.3 Series resistance vs. Reverse voltage
f = 470MHz
146
HVM16 Variable Capacitance Diode for FM Tuner
Features • Worked by 8V, suitable for small manufacture sources of electric power.
Ordering Information and Pin Arrangement
1. Anode
2. Anode
3. Cathode
(Top View)
2 1
3
T3
(Top view)
HVM16TR
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
2 1
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 14 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics * (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 14.0 — — V IR = 10 µA Reverse current IR — — 50.0 nA VR = 9 V
C2 43.0 — 48.1 VR = 2 V, f = 1 MHz Capacitance C8 24.6 — 29.2
pF VR = 8 V, f = 1 MHz
Capacitance ratio n 1.65 — 1.75 — C2/C8 Figure of merit Q 75.0 — — — VR = 2 V, f = 100 MHz Note: Per one device.
HVM16
147
Main Characteristics
200 4 16128
10
100
10
1.01.0 40
10–9
10–10
10–13
10–12
10–11
Reverse voltage VR (V)
Fig.1 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt
I R
(
A)
Ca
pa
cita
nce
C
(
pF
)
Reverse voltage VR (V)
Fig.2 Capacitance vs. Reverse voltage
f = 1MHz
148
RKS151KK, RKS151KJ Silicon Epitaxial Planar Diode for UHF/VHF Tuner Band Switch
Features • Low capacitance. (C = 0.8 pF max) • Low forward resistance. (rf = 0.7 Ω max)
Ordering Information and Pin Arrangement
1 2K3
RKS151KJ P, RKS151KJ R
1 2
RKS151KK R
Cathode mark
Mark
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Package Name : SFP
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
R (8,000 pcs / reel)
Package Name : UFP
Package Code : PWSF0002ZA-A
Taping Abbreviation (Quantity)
P (4,000 pcs / reel)
R (8,000 pcs / reel)
K3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 35 V Power dissipation Pd 150 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 50 nA VR = 25 V Forward voltage VF — — 1.0 V IF = 10 mA Capacitance C — — 0.8 pF VR = 6 V, f = 1 MHz Forward resistance rf — — 0.7 Ω IF = 2 mA, f = 100 MHz Note: 1. In the SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
RKS151KK, RKS151KJ
149
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50
0.1
1.0
10
10–2
10–3
10–4
10–5
10–8
10–9
10–6
10–7
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
Fig.4 Forward resistance vs. Forward current
Forward current IF (mA)
Fo
rwa
rd r
esis
tan
ce
r f (Ω
)
10–7
10–8
10–9
10–10
10–13
10–14
10–11
10–12
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)R
eve
rse
cu
rre
nt
IR
(A
)Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I
F (A
)
0.1
1.0
10
0.1 101.0
f = 100MHz
0.1 10 1001.0
f = 1MHz
150
RKS150KK Silicon Epitaxial Planar Diode for UHF/VHF Tuner Band Switch
Features • Low forward resistance. (rf = 0.7 Ω max)
Ordering Information and Pin Arrangement
1 2
RKS150KK R Cathode mark
Mark
1. Cathode
2. Anode
Package Name : SFP
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
R (8,000 pcs / reel)K2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 35 V Power dissipation Pd 150 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 50 nA VR = 25 V Forward voltage VF — — 1.0 V IF = 10 mA Capacitance C — — 1.2 pF VR = 6 V, f = 1 MHz Forward resistance rf — — 0.7 Ω IF = 2 mA, f = 100 MHz Note: 1. In the SFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,
the solderability of the lead tip has been ignored. Please test and confirm before use.
RKS150KK
151
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50
1.0 100.1
1.0
10
400
0.5
1.0
1.5
2.0
2.5
10–2
10–3
10–4
10–5
10–8
10–9
10–6
10–7
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
f = 1MHz
Fig.4 Forward resistance vs. Forward current
Forward current IF (A)
Fo
rwa
rd r
esis
tan
ce
r f (Ω
)
f = 100MHz
10–6
10–7
10–8
10–9
10–12
10–13
10–10
10–11
10-210-310-4
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)R
eve
rse
cu
rre
nt
IR
(A
)Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I
F (A
)
152
HVD131, HVC131, HVU131 Silicon Epitaxial Planar Pin Diode for Antenna Switching
Features • Low capacitance. (C = 0.8 pF max) • Low forward resistance. (rf = 1.0 Ω max)
Ordering Information and Pin Arrangement
1 2P1
Package Name : UFP
Package Code : PWSF0002ZA-A
Package Name : SFP
Package Code: PUSF0002ZB-A
1 21
HVC131TRF, HVC131KRFHVD131KRF HVU131TRF
Package Name : URP
Package Code : PTSP0002ZA-A
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
1 2P1
Cathode mark
Mark
1. Cathode
2. Anode
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM 65 V Reverse voltage VR 60 V Forward current IF 100 mA Power dissipation Pd 150 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 0.1 μA VR = 60 V Forward voltage VF — — 1.0 V IF = 10 mA Capacitance C — — 0.8 pF VR = 1 V, f = 1 MHz Forward resistance rf — — 1.0 Ω IF = 10 mA, f = 100 MHz Notes: 1. In the SFP, UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVD131, HVC131, HVU131
153
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0
0.1
10
100101.0
1.0
0 8020 6040 100
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t
I F (
A)
Ta= 25°C
Ta= 50°C
10–12
10–2
10–4
10–6
10–8
10–10
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
f = 1MHz
Forward current IF (A)
Fig.4 Forward resistance vs. Forward current
Fo
rwa
rd r
esis
tan
ce
r f (Ω
)
10–7
10–8
10–9
10–10
10–11
10–12
10–13
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt
I R
(
A)
Ta= 25°C
Ta= 50°C
103
102
101
100
10–1
10–5 10–4 10–3 10–2
f = 100MHz
154
HVL145, HVD145, HVC145, HVU145 Silicon Epitaxial Planar Pin Diode for Antenna Switching
Features • An optimal solution for antenna switching in mobile phones. • Low capacitance. (C = 0.45 pF max) • Low forward resistance. (rf = 1.8 Ω max)
Ordering Information and Pin Arrangement
1 2T51 24
HVC145TRF, HVC145KRF
1 2
HVD145KRF
T5
HVU145TRF
1 2T5
Cathode mark
Mark
Cathode mark
Mark
Cathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
1. Cathode
2. Anode
Cathode mark
Mark
1. Cathode
2. Anode
Package Code: PXSF0002ZA-A
HVL145KRF
Taping Abbreviation (Quantity)
KRF (10,000 pcs / reel)
Package Name : SFP
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : EFP Package Name : UFP
Package Code : PWSF0002ZA-A
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
KRF (8,000 pcs / reel)
Package Name : URPPackage Code : PTSP0002ZA-A
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Value Item Symbol HVL145 HVD145 HVC145 HVU145 Unit
Reverse voltage VR 60 60 60 60 V Forward current IF 50 50 50 50 mA Power dissipation Pd 100 150 150 150 mW Junction temperature Tj 125 125 125 125 °C Storage temperature Tstg –55 to +125 –55 to +125 –55 to +125 –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 100 nA VR = 60 V Forward voltage VF — — 0.9 V IF = 2 mA Capacitance C — — 0.45 pF VR = 1 V, f = 1 MHz Forward resistance rf — — 1.8 Ω IF = 10 mA, f = 100 MHz ESD-Capability *1 — 100 — — V C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse. Notes: 1. Failure criterion; IR > 100 nA at VR = 60 V 2. In the EFP, SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting
plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVL145, HVD145, HVC145, HVU145
155
Main Characteristics
100
101
10-1
101.00.1
f = 1MHz
0 0.2 0.4 0.6 0.8 1.0
10-2
10-4
10-6
10-8
10-10
10-12
0 8020 6040 100
10-9
10-7
10-8
10-10
10-11
10-12
10-13
0.1
10
1.0
Ta = 75°C
Ta = 25°C
Ta = –25°C
Ta = 75°C
Ta = 50°C
Ta = 25°CFo
rwa
rd c
urr
en
t I
F (A
)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Ca
pa
cita
nce
C
(p
F)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Fo
rwa
rd r
esis
tan
ce
r f (Ω
)
Fig.4 Forward resistance vs. Forward current
Forward current IF (A)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)R
eve
rse
cu
rre
nt I
R (A
)
10-4 10-3 10-2 10-1
103
102
f = 100MHz
156
HVD132, HVC132 Silicon Epitaxial Planar Pin Diode for Antenna Switching
Features • Low capacitance. (C = 0.5 pF max) • Low forward resistance. (rf = 2.0 Ω max)
Ordering Information and Pin Arrangement
1 2P2
Package Name : UFP
Package Code : PWSF0002ZA-A
Package Name : SFPPackage Code: PUSF0002ZB-A
1 22
HVC132TRFHVD132KRF
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM 65 V Reverse voltage VR 60 V Forward current IF 100 mA Power dissipation Pd 150 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 0.1 μA VR = 60 V Forward voltage VF — — 1.0 V IF = 10 mA Capacitance C — — 0.5 pF VR = 1 V, f = 1 MHz Forward resistance rf — — 2.0 Ω IF = 10 mA, f = 100 MHz Note: 1. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVD132, HVC132
157
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0
0.1
10
100101.0
1.0
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
Ta = -25°C
10-2
10-4
10-6
10-8
10-10
10-12
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I
F (A
)
Ta = 25°C
Ta = 75°C
Ta = -25°C
Ta = 25°C
Ta = 75°C
10-10
10-8
10-9
10-11
10-12
10-13
10-7
0 8020 6040 100
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)R
eve
rse
cu
rre
nt I
R (A
)
f = 100MHz
100
102
101
10-1
103
10-310-5 10-4 10-2
Fig.4 Forward resistance vs. Forward current
Forward current IF (A)
Fo
rwa
rd r
esis
tan
ce
r f
(Ω)
Fig.3 Capacitance vs. Reverse voltage
f = 1MHz
158
HVL142A, HVD142A, HVC142A Silicon Epitaxial Planar Pin Diode for Antenna Switching
Features • An optimal solution for antenna switching in mobile phones. • Low capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 1.3 Ω max)
Ordering Information and Pin Arrangement
1 2T6
Package Name : UFP
Package Code : PWSF0002ZA-A
Package Name : SFP
Package Code: PUSF0002ZB-A
1 2
HVC142ATRFHVD142AKRF
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : EFP
Package Code: PUSF0002ZB-A
1 2J
HVL142AKRF
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
KRF (10,000 pcs / reel)
T6
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Value Item Symbol HVL142A HVD142A HVC142A Unit
Reverse voltage VR 30 30 30 V Forward current IF 100 100 100 mA Power dissipation Pd 100 150 150 mW Junction temperature Tj 125 125 125 °C Storage temperature Tstg –55 to +125 –55 to +125 –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 100 nA VR = 30 V Forward voltage VF — — 1.0 V IF = 10 mA Capacitance C — — 0.35 pF VR = 1 V, f = 1 MHz Forward resistance rf — — 1.3 Ω IF = 10 mA, f = 100 MHz ESD-Capability *1 — 100 — — V C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse. Notes: 1. Failure criterion; IR > 100 nA at VR = 30 V 2. In the EFP, SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting
plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVL142A, HVD142A, HVC142A
159
Main Characteristics
0 4010 3020 50
10
101.00.1
1.0
f = 1MHz
0 0.2 0.4 0.6 0.8 1.0
10−4 10−3 10−2 10−10.1
f = 100MHz
10−11
10−10
10−9
10−8
10−7
10−13
10−1210−10
10−8
10−6
10−4
10−2
10−12
101
10−1
100
102
103
Fo
rwa
rd r
esis
tan
ce
r
f (Ω
)
Fig.4 Forward resistance vs. Forward current
Forward current IF (A)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
Re
ve
rse
cu
rre
nt I R
(
A)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t I F
(
A)
160
HVL144A, HVD144A Silicon Epitaxial Trench Pin Diode for Antenna Switching
Features • Adopting the trench structure improves low capacitance. (C = 0.43 pF max) • Low forward resistance. (rf = 1.8 Ω max) • Low operation current.
Ordering Information and Pin Arrangement
Package Name : SFP
Package Code: PUSF0002ZB-A
1 2
HVD144AKRF
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : SFP
Package Code: PUSF0002ZB-A
1 2K
HVL144AKRF
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
KRF (10,000 pcs / reel)
T7
Absolute Maximum Ratings (Ta = 25°C)
Value Item Symbol HVL144A HVD144A
Unit
Reverse voltage VR 30 30 V Forward current IF 100 100 mA Power dissipation Pd 100 150 mW Junction temperature Tj 125 125 °C Storage temperature Tstg –55 to +125 –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 100 nA VR = 30 V Forward voltage VF — — 0.90 V IF = 2 mA Capacitance C — — 0.43 pF VR = 1 V, f = 1 MHz Forward resistance rf — — 1.80 Ω IF = 2 mA, f = 100 MHz ESD-Capability *1 — 100 — — V C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. In the EFP & SFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVL144A, HVD144A
161
Main Characteristics
10-4 10-3 10-2 10-1
1.0
10
0.1101.00.1
f = 100MHzf = 1MHz
0 0.2 0.4 0.6 0.8 1.0
10-2
10-4
10-6
10-8
10-10
10-12
0 4010 3020 50
10-10
10-8
10-9
10-11
10-12
10-13
10-14
0.1
10
1.0
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I
F (A
)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)R
eve
rse
cu
rre
nt I
R (A
)
Fig.4 Forward resistance vs. Forward current
Forward current IF (A)
Fo
rwa
rd r
esis
tan
ce
r f (Ω
)
Ta = 25°C
Ta = 75°C
Ta = 25°C
Ta = 75°C
162
HVL147, HVD147 Silicon Epitaxial Trench Pin Diode for Antenna Switching
Features • Adopting the trench structure improves low capacitance. (C = 0.31 pF max) • Low forward resistance. (rf = 1.5 Ω max) • Low operation current.
Ordering Information and Pin Arrangement
1 2N 1 2
HVD147KRF
L1
Cathode mark
Mark
Cathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
Package Code: PXSF0002ZA-A
HVL147KRF
Taping Abbreviation (Quantity)
KRF (10,000 pcs / reel)
Package Name : SFP
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : EFP
Absolute Maximum Ratings (Ta = 25°C)
Value Item Symbol HVL147 HVD147 Unit
Reverse voltage VR 30 30 V Forward current IF 100 100 mA Power dissipation Pd 100 150 mW Junction temperature Tj 125 125 °C Storage temperature Tstg –55 to +125 –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 100 nA VR = 30 V Forward voltage VF — — 1.00 V IF = 10 mA Capacitance C — — 0.31 pF VR = 1 V, f = 1 MHz
— 2.5 — IF = 2 mA, f = 100 MHz Forward resistance rf — — 1.5
Ω IF = 10 mA, f = 100 MHz
ESD-Capability *1 — 100 — — V C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. In the EFP,SFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HVL147, HVD147
163
Main Characteristics
10
100
1.0
0 0.2 0.4 0.6 0.8 1.0
10-2
10-4
10-6
10-8
10-10
10-12
0 4010 3020 50
10-10
10-8
10-9
10-11
10-12
10-13
10-14
0.1
10
1.0
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I
F
(A)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)R
eve
rse
cu
rre
nt I
R
(A)
Fig.4 Forward resistance vs. Forward current
Forward current IF (mA)
Fo
rwa
rd r
esis
tan
ce
r f
(Ω)
Ta = 25°C
Ta = 75°C
20 104 6 8
f = 1MHz
0.1 1.0 10
f = 100MHz
164
RKP201KL, RKP201KK Silicon Epitaxial Trench Pin Diode for Antenna Switching
Features • Adopting the trench structure minimize terminal capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 2.0 Ω max) • Low operation current.
Ordering Information and Pin Arrangement
1 24 1 2
RKP201KK R
Cathode mark
Mark
Cathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
Package Code: PXSF0002ZA-A
RKP201KL R
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : SFP
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
R (8,000 pcs / reel)
Package Name : EFP
− 4
Absolute Maximum Ratings (Ta = 25°C)
Value Item Symbol RKP201KL RKP201KK Unit
Reverse voltage VR 30 30 V Forward current IF 100 100 mA Power dissipation Pd 100 150 mW Junction temperature Tj 125 125 °C Storage temperature Tstg –55 to +125 –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 100 nA VR = 30 V Forward voltage VF — — 0.9 V IF = 2 mA Capacitance C — — 0.35 pF VR = 1 V, f = 1 MHz Forward resistance rf — — 2.0 Ω IF = 2 mA, f = 100 MHz ESD-Capability *1 — 100 — — V C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. In the EFP and SFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
RKP201KL, RKP201KK
165
Main Characteristics
0.1 1.0 10
1.0
10
0.1101.00.1
f = 100MHzf = 1MHz
0 0.2 0.4 0.6 0.8 1.0
10-2
10-4
10-6
10-8
10-10
10-12
0 4010 3020 50
10-9
10-7
10-8
10-10
10-11
10-12
10-13
0.1
10
1.0
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I
F (A
)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)R
eve
rse
cu
rre
nt I
R (A
)
Fig.4 Forward resistance vs. Forward current
Forward current IF (mA)
Fo
rwa
rd r
esis
tan
ce
r f (Ω
)
Ta = 25°C
Ta = 75°C
Ta = 25°C
Ta = 75°C
166
RKP200KP Silicon Epitaxial Planar Pin Diode for Antenna Switching
Features • An optimal solution for antenna switching in mobile phones. • Low capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 1.3 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. • Ultra small Package (0.6mm×0.3mm Size leadless type)
Ordering Information and Pin Arrangement
Cathode mark
Mark
1 2
1. Cathode
2. Anode7
Package Code: PXSN0002ZB-A
RKP200KPR
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : MP6
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 30 V Forward current IF 100 mA Power dissipation Pd 100 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V IF = 10 mA Reverse current IR — — 100 nA VR = 30 V Capacitance C — — 0.35 pF VR = 1 V, f = 1 MHz Forward resistance rf — — 1.3 Ω IF = 10 mA, f = 100 MHz ESD-Capability *1 — 100 — — V C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package.
RKP200KP
167
Main Characteristics
0 4010 3020 50
1.00.1
1.0
f = 1MHz
0 0.2 0.4 0.6 0.8 1.0
0.1 1.0 100.1
10−11
10−10
10−9
10−8
10−7
10−13
10−1210−10
10−8
10−6
10−4
10−2
10−12
103
Fo
rwa
rd r
esis
tan
ce
r
f (Ω
)
Fig.4 Forward resistance vs. Forward current
Forward current IF (mA)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
Re
ve
rse
cu
rre
nt I R
(
A)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t I F
(
A)
f = 100MHz
1010−1
101
100
102
168
RKP204KP Silicon Epitaxial Planar Pin Diode for Antenna Switching
Features • An optimal solution for antenna switching in mobile phones. • Low capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 1.1 Ω max) • Low operation current. • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. • Ultra small Package (0.6mm × 0.3mm Size leadless type)
Ordering Information and Pin Arrangement
Cathode mark
Mark
1 2
1. Cathode
2. Anode
S
Package Code: PXSN0002ZB-A
RKP204KPR
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : MP6
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 30 V Forward current IF 100 mA Power dissipation Pd 100 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V IF = 10 mA Reverse current IR — — 100 nA VR = 30 V Capacitance C — — 0.35 pF VR = 1 V, f = 1 MHz Forward resistance rf — — 1.1 Ω IF = 10 mA, f = 100 MHz ESD-Capability *1 — 100 — — V C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package.
RKP204KP
169
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0
10−11
10−10
10−9
10−8
10−7
10−13
10−1210−10
10−8
10−6
10−4
10−2
10−12
Fo
rwa
rd r
esis
tan
ce
r
f
(Ω)
Fig.4 Forward resistance vs. Forward current
Forward current IF (mA)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
Re
ve
rse
cu
rre
nt I R
(
A)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t
I F
(A
)
0
0.3
0.1
0.2
0.4
0 108642
0.5f = 1MHz
1.00.1
1.0
0.110
10
f = 100MHz
0 4010 3020
170
RKP450KE Ultra small Package Composite Pin Diode for Antenna Switching
Features • An optimal solution for antenna switching in mobile phones. • Low capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 1.3 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. • Ultra small Package (1.63 mm × 0.67 mm Size leadless type) of diode array with four same kind of elements.
Ordering Information and Pin Arrangement
1 2 3 4
8 7 6 5
A 1
1 2 3 4
8 7 6 5
RKP200KP Series
Package Name : MP6-8
Package Code : PXSN0008ZA-A
RKP450KER
Mark
No.1 Recognition band
(Top view)
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 30 V Forward current IF 100 mA Power dissipation Pd*1 100 mW Power dissipation Pd*2 200 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Per one device. 2. Value at Package total.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V IF = 10 mA Reverse current IR — — 100 nA VR = 30 V Capacitance C — — 0.35 pF VR = 1 V, f = 1 MHz Forward resistance rf — — 1.3 Ω IF = 10 mA, f = 100 MHz ESD-Capability *1 — 100 — — V C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the MP6-8 package.
RKP450KE
171
Main Characteristics
0 4010 3020 50
1.00.1
1.0
f = 1MHz
0 0.2 0.4 0.6 0.8 1.0
0.1 1.0 100.1
10−11
10−10
10−9
10−8
10−7
10−13
10−1210−10
10−8
10−6
10−4
10−2
10−12
103
Fo
rwa
rd r
esis
tan
ce
r
f (Ω
)
Fig.4 Forward resistance vs. Forward current
Forward current IF (mA)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
Re
ve
rse
cu
rre
nt I R
(
A)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t I F
(
A)
f = 100MHz
1010−1
101
100
102
172
RKP451KE Ultra small Package Composite Pin Diode for Antenna Switching
Features • An optimal solution for antenna switching in mobile phones. • Low capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 1.3 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. • Ultra small Package (1.63 mm × 0.67 mm Size leadless type) of diode array with four same kind of elements.
Ordering Information and Pin Arrangement
Mark
No.1 Recognition band
A 2
RKP200KP Series(Top view)
4
5
3
6
2
7
1
8
4
5
3
6
2
7
1
8
Package Name : MP6-8
Package Code : PXSN0008ZA-A
RKP451KER
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 30 V Forward current IF 100 mA Power dissipation Pd *1 100 mW Power dissipation Pd *2 200 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Per one device. 2. Value at Package total.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V IF = 10 mA Reverse current IR — — 100 nA VR = 30 V Capacitance C — — 0.35 pF VR = 1 V, f = 1 MHz Forward resistance rf — — 1.3 Ω IF = 10 mA, f = 100 MHz ESD-Capability *1 — 100 — — V C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the MP6-8 package.
RKP451KE
173
Main Characteristics
0 4010 3020 50
1.0
0 0.2 0.4 0.6 0.8 1.0
0.1 1.0 100.1
10−11
10−10
10−9
10−8
10−7
10−13
10−1210−10
10−8
10−6
10−4
10−2
10−12
Fo
rwa
rd r
esis
tan
ce
r
f
(Ω)
Fig.4 Forward resistance vs. Forward current
Forward current IF (mA)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
Re
ve
rse
cu
rre
nt I R
(
A)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t
I F
(A
)
100
0
1.0
10
f = 100MHz
20 104 6 8
f = 1MHz
174
RKP452KE Ultra small Package Composite Pin Diode for Antenna Switching
Features • An optimal solution for antenna switching in mobile phones. • Low capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 1.3 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. • Ultra small Package (1.63 mm × 0.67 mm Size leadless type) of diode array with four same kind of elements.
Ordering Information and Pin Arrangement
Mark
No.1 Recognition band
A 3
RKP200KP Series(Top view)
4
5
3
6
2
7
1
8
4
5
3
6
2
7
1
8
Package Name : MP6-8
Package Code : PXSN0008ZA-A
RKP452KER
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 30 V Forward current IF 100 mA Power dissipation Pd *1 100 mW Power dissipation Pd *2 200 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Per one device. 2. Value at Package total.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V IF = 10 mA Reverse current IR — — 100 nA VR = 30 V Capacitance C — — 0.35 pF VR = 1 V, f = 1 MHz Forward resistance rf — — 1.3 Ω IF = 10 mA, f = 100 MHz ESD-Capability *1 — 100 — — V C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the MP6-8 package.
RKP452KE
175
Main Characteristics
0 4010 3020 50
1.00.1
1.0
0 0.2 0.4 0.6 0.8 1.0
0.1 1.0 100.1
10−11
10−10
10−9
10−8
10−7
10−13
10−1210−10
10−8
10−6
10−4
10−2
10−12
Fo
rwa
rd r
esis
tan
ce
r
f
(Ω)
Fig.4 Forward resistance vs. Forward current
Forward current IF (mA)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
Re
ve
rse
cu
rre
nt
I R
(
A)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t
I F
(A
)
10
100
0
1.0
10
f = 100MHzf = 1MHz
176
RKP453KE Ultra small Package Composite Pin Diode for Antenna Switching
Features • An optimal solution for antenna switching in mobile phones. • Low capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 1.3 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. • Ultra small Package (1.63 mm × 0.67 mm Size leadless type) of diode array with four same kind of elements.
Ordering Information and Pin Arrangement
Mark
No.1 Recognition band
A 4
RKP200KP Series(Top view)
4
5
3
6
2
7
1
8
4
5
3
6
2
7
1
8Package Name : MP6-8
Package Code : PXSN0008ZA-A
RKP453KER
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 30 V Forward current IF 100 mA Power dissipation Pd *1 100 mW Power dissipation Pd *2 200 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Per one device. 2. Value at Package total.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V IF = 10 mA Reverse current IR — — 100 nA VR = 30 V Capacitance C — — 0.35 pF VR = 1 V, f = 1 MHz Forward resistance rf — — 1.3 Ω IF = 10 mA, f = 100 MHz ESD-Capability *1 — 100 — — V C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the MP6-8 package.
RKP453KE
177
Main Characteristics
0 4010 3020 50
1.0
0.1 1.0 100.1
10−11
10−10
10−9
10−8
10−7
10−13
10−12
Fo
rwa
rd r
esis
tan
ce
r
f
(Ω)
Fig.4 Forward resistance vs. Forward current
Forward current IF (mA)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
Re
ve
rse
cu
rre
nt
I R
(
A)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t
I F
(A
)
0 0.2 0.4 0.6 0.8 1.0
10−10
10−8
10−6
10−4
10−2
10−12
100
0
1.0
10
f = 100MHz
20
f = 1MHz
104 6 8
178
RKP454KE Ultra small Package Composite Pin Diode for Antenna Switching
Features • An optimal solution for antenna switching in mobile phones. • Low capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 1.3 Ω max) • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. • Ultra small Package (1.63 mm × 0.67 mm Size leadless type) of diode array with four same kind of elements.
Ordering Information and Pin Arrangement
Mark
No.1 Recognition band
A 5
RKP200KP Series(Top view)
4
5
3
6
2
7
1
8
4
5
3
6
2
7
1
8Package Name : MP6-8
Package Code : PXSN0008ZA-A
RKP454KER
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 30 V Forward current IF 100 mA Power dissipation Pd *1 100 mW Power dissipation Pd *2 200 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Per one device. 2. Value at Package total.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V IF = 10 mA Reverse current IR — — 100 nA VR = 30 V Capacitance C — — 0.35 pF VR = 1 V, f = 1 MHz Forward resistance rf — — 1.3 Ω IF = 10 mA, f = 100 MHz ESD-Capability *1 — 100 — — V C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the MP6-8 package.
RKP454KE
179
Main Characteristics
0 4010 3020 50
1.0
0 0.2 0.4 0.6 0.8 1.0
0.1 1.0 100.1
10−11
10−10
10−9
10−8
10−7
10−13
10−1210−10
10−8
10−6
10−4
10−2
10−12
Fo
rwa
rd r
esis
tan
ce
r
f
(Ω)
Fig.4 Forward resistance vs. Forward current
Forward current IF (mA)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
Re
ve
rse
cu
rre
nt
I R
(
A)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t
I F
(A
)
10
100
0
1.0
10
20 4 6 8
f = 1MHz f = 100MHz
180
HVM14, HVM14S, HVM14SR, HVB14S Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
Features • Low forward resistance. (rf = 7.0 Ω max) • Low capacitance. (C = 0.25 pF typ)
Ordering Information and Pin Arrangement
2 1
3
HVM14SRHVM14
2 1
3
HVM14S
2 1
3
H5 H6 H7
HVM14TR ,HVM14STR, HVM14SRTR
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
(Top view)(Top view)(Top view)
1. NC
2. Anode
3. Cathode
1. Cathode2
2. Anode1
3. Cathode1
Anode2
1. Anode 1
2. Cathode 2
3. Cathode 1
Anode 2
HVB14S
2 1
31. Cathode
2. Anode
3. Cathode
Anode
H6
(Top view)
HVB14STR
Package Name : CMPAK
Package Code: PTSP0003ZB-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
Absolute Maximum Ratings *1 (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 50 V Forward current IF 50 mA Power dissipation Pd 100 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Absolute maximum ratings are described each unit separately.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V IF = 50 mA Reverse current IR — — 100 nA VR = 50 V Capacitance C — 0.25 — pF VR = 50 V, f = 1 MHz Forward resistance rf — 7.0 Ω IF = 10 mA, f = 100 MHz ESD-Capability *2 — 200 — — V C = 200 pF, Both forward and
reverse direction 1 pulse. Notes: 1. Per one device. 2. Failure criterion; IR ≥ 200 nA at VR = 50 V
HVM14, HVM14S, HVM14SR, HVB14S
181
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0
10–3
10–5
10–7
10–9
10–11
10–1
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t
I F
(A
)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
10–5 10–4 10–3 10–2
Fo
rwa
rd r
esis
tan
ce
r f (Ω
)
Forward current IF (A)
Fig.4 Forward resistance vs. Forward current
103
104
1.0
102
10
Re
ve
rse
cu
rre
nt I R
(
A)
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
f = 100MHz
0 10 4010–12
10–10
10–11
3020 50
10–9
10–8
0.1
10
100101.0
1.0
f = 1MHz
182
HVU187, HVM187S, HVM187WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
Features • Low forward resistance. (rf = 5.5 Ω max)
Ordering Information and Pin Arrangement
HVU187TRF
Package Name : URPPackage Code : PTSP0002ZA-A
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
1 2D
Cathode mark
Mark
1. Cathode
2. Anode
HVM187S
2 1
3
H3
(Top view)
1. Cathode2
2. Anode1
3. Cathode1
Anode2
HVM187STR ,HVM187WKTR
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
HVM187WK
2 1
3
H1
(Top view)
1. Cathode2
2. Anode1
3. Cathode1
Anode2
HVU187
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 60 V Forward current IF 50 mA Power dissipation Pd*1 100 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Per one device.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 100 nA VR = 60 V Forward voltage VF — — 1.0 V IF = 10 mA Capacitance C — — 2.4 pF VR = 0 V, f = 1 MHz Forward resistance rf 3.5 — 5.5 Ω IF = 10 mA, f = 100 MHz ESD-Capability *2 — 200 — — V C = 200 pF, Both forward and
reverse direction 1 pulse. Notes: 1. Per one device. 2. Failure criterion; IR ≥ 100 nA at VR = 60 V
HVU187, HVM187S, HVM187WK
183
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0 0 8020 6040 100
0.1
10
100101.0
1.0
1.0
10
10–12
10–8
10–10
10–4
10–6
10–210–8
10–9
10–10
10–11
10–12
Re
ve
rse
cu
rre
nt
I R
(
A)
f = 100MHz
10–5 10–4 10–3 10–2
103
104
102
Ca
pa
cita
nce
C
(
pF
)
f = 1MHz
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Forward current IF (A)
Fig.4 Forward resistance vs. Forward current
Fo
rwa
rd r
esis
tan
ce
r f (Ω
)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t
I F
(A
)
184
RKP300KL, RKP300KK, RKP300KJ Silicon Epitaxial Planar Pin Diode for Wireless LAN
Features • Suitable for an antenna switches of wireless LAN and a cordless telephone. • Super -Low capacitance. (C = 0.25 pF max) • Low forward resistance. (rf = 3.7 Ω max)
Ordering Information and Pin Arrangement
1 2L41 20
RKP300KJ P, RKP300KJ R
1 2
RKP300KK R
L4
Cathode mark
Mark
Cathode mark
Mark
Cathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
1. Cathode
2. Anode
Package Code: PXSF0002ZA-A
RKP300KL R
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : SFP
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
R (8,000 pcs / reel)
Package Name : EFP Package Name : UFP
Package Code : PWSF0002ZA-A
Taping Abbreviation (Quantity)
P (4,000 pcs / reel)
R (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 30 V Forward current IF 50 mA Power dissipation Pd 100 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 100 nA VR = 30 V Forward voltage VF — — 1.0 V IF = 10 mA Capacitance C — — 0.25 pF VR = 1 V, f = 1 MHz Forward resistance rf — — 3.7 Ω IF = 10 mA, f = 100 MHz Note: In the EFP,SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting
plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
RKP300KL, RKP300KK, RKP300KJ
185
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0
10-2
10-4
10-6
10-8
10-10
10-12
0 4010 3020 50
10-10
10-8
10-9
10-11
10-12
10-13
10-14
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I
F
(A)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)R
eve
rse
cu
rre
nt I
R
(A)
Fig.4 Forward resistance vs. Forward current
Forward current IF (mA)
Fo
rwa
rd r
esis
tan
ce
r f
(Ω)
1.0
0.11.00.1 10010
f = 1MHz
0.1 1.0 10
100
1.0
10
f = 100MHz
186
HVC190 Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
Features • Low capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 3.0 Ω typ)
Ordering Information and Pin Arrangement
1 2H9
Cathode mark
Mark
1. Cathode
2. Anode
Package Code : PWSF0002ZA-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : UFP
HVC190TRF, HVC190KRF
TRF(4,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 50 V Forward current IF 50 mA Power dissipation Pd 150 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V IF = 50 mA Reverse current IR — — 100 nA VR = 50 V Capacitance C — — 0.35 pF VR = 50 V, f = 1 MHz Forward resistance rf — 3.0 5.0 Ω IF = 10 mA, f = 100 MHz ESD-Capability *1 — 200 — — V C = 200 pF, Both forward and reverse
direction 1 pulse Notes: 1. Failure criterion ; IR ≥ 200 nA at VR = 50 V 2. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,
the solderability of the lead tip has been ignored. Please test and confirm before use.
HVC190
187
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0
10-3
10-5
10-7
10-9
10-11
10-1
0 10 403020 50
1.0
1.00.1
0.1
10-4 10-3 10-2 10-11.0
10
102
103
104
f = 100MHz
0.01100
10
10
f=1MHz
10-7
10-8
10-9
10-10
10-11
10-12
10-13
10-14
Reverse voltage VR (V)
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Fig.3 Capacitance vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fig.4 Forward resistance vs. Forward current
Fo
rwa
rd c
urr
en
t I F
(
A)
Ca
pa
cita
nce
C
(
pF
)
Forward current IF (A)
Fo
rwa
rd r
esis
tan
ce
r
f (Ω
)
188
RKP300WKQE Silicon Epitaxial Planar Pin Diode for Antenna Switching
Features • Suitable for an antenna switches of wireless LAN and a cordless telephone. • Super -Low capacitance.(C = 0.25 pF max) • Low forward resistance. (rf = 3.7 Ω max)
Ordering Information and Pin Arrangement
2 1
3
P8
(Top view)
RKP300WKQEP
Package Name : CMPAK
Package Code: PTSP0003ZB-A
Taping Abbreviation (Quantity)
P(3,000 pcs / reel)
(Top view)
1. Anode
2. Anode
3. Cathode
2 1
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 30 V Forward current IF 50 mA Power dissipation Pd * 200 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: Per one device 100 mW.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 100 nA VR = 30 V Forward voltage VF — — 1.0 V IF = 10 mA Capacitance C — — 0.25 pF VR = 20 V, f = 1 MHz Forward resistance rf — — 3.7 Ω IF = 10 mA, f = 100 MHz
RKP300WKQE
189
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0
10-2
10-4
10-6
10-8
10-10
10-12
0 4010 3020 50
10-10
10-8
10-9
10-11
10-12
10-13
10-14
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I
F
(A)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)R
eve
rse
cu
rre
nt I
R
(A)
Fig.4 Forward resistance vs. Forward current
Forward current IF (mA)
Fo
rwa
rd r
esis
tan
ce
r f
(Ω)
1.0
0.11.00.1 10010
f = 1MHz
0.1 1.0 10
100
1.0
10
f = 100MHz
190
1S2076 Silicon Epitaxial Planar Diode for High Speed Switching
Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 8.0 ns max)
Ordering Information and Pin Arrangement
1 2
Cathode band (Light Blue)
1. Cathode
2. Anode
1S2076TA
Package Name : DO-35Package Code : GRZZ0002ZB-A
Taping Abbreviation (Quantity)
TA (5,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM 35 V Reverse voltage VR 30 V Peak forward current IFM 450 mA Non-Repetitive peak forward surge current IFSM * 1 A Average rectified current IO 150 mA Power dissipation Pd 250 mW Junction temperature Tj 175 °C Storage temperature Tstg –65 to +175 °C Note: Within 1s forward surge current.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF 0.64 — 0.8 V IF = 10 mA Reverse current IR — — 100 nA VR = 30 V Capacitance C — — 3.0 pF VR = 1 V, f = 1 MHz Reverse recovery time trr * — — 8.0 ns IF = IR = 10 mA, Irr = 1 mA Note: Reverse recovery time test circuit
0.1 μF
DCSupply
PulseGenerator
Ro = 50 Ω Rin = 50 ΩSamplingOscilloscope
3 kΩ
Trigger
1S2076
191
Main Characteristics
Ta =
-25°C
Ta =
25°C
Ta =
125°C
Ta =
75°C Ta = 75°C
Ta = 125°C
Ta = 25°C
0 0.2 0.80.6 1.00.4 1.2
1.0 10
10
1.0
0.1100
f = 1MHz
0 10 30 4020 50
10-1
10-2
10-3
10-4
10-4
10-5
10-6
10-7
10-8
10-9
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t I F
(
A)
Re
ve
rse
cu
rre
nt I R
(
A)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
192
1S2076A Silicon Epitaxial Planar Diode for High Speed Switching
Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 8.0 ns max) • High reliability with glass seal.
Ordering Information and Pin Arrangement
1 2
Cathode band (Navy Blue)
1. Cathode
2. Anode
1S2076ATA
Package Name : DO-35Package Code : GRZZ0002ZB-A
Taping Abbreviation (Quantity)
TA (5,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM 70 V Reverse voltage VR 60 V Peak forward current IFM 450 mA Non-Repetitive peak forward surge current IFSM * 1 A Average rectified current IO 150 mA Power dissipation Pd 250 mW Junction temperature Tj 175 °C Storage temperature Tstg –65 to +175 °C Note: Within 1s forward surge current.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF 0.64 — 0.8 V IF = 10 mA Reverse current IR — — 0.1 μA VR = 30 V Capacitance C — — 3.0 pF VR = 1 V, f = 1 MHz Reverse recovery time trr * — — 8.0 ns IF = IR = 10 mA, Irr = 1 mA Note: Reverse recovery time test circuit
0.1 μF
DCSupply
PulseGenerator
Ro = 50 Ω Rin = 50 ΩSamplingOscilloscope
3 kΩ
Trigger
1S2076A
193
Main Characteristics
Ta =
-25°C
Ta =
25°C
Ta =
125°C
Ta =
75°C Ta = 75°C
Ta = 125°C
Ta = 25°C
0 0.2 0.80.6 1.00.4 1.2
1.0 10
10
1.0
0.1100
f = 1MHz
0 10 30 4020 50
10-1
10-2
10-3
10-4
10-4
10-5
10-6
10-7
10-8
10-9
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t I F
(
A)
Re
ve
rse
cu
rre
nt I R
(
A)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
194
1SS119 Silicon Epitaxial Planar Diode for High Speed Switching
Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 3.5 ns max)
Ordering Information and Pin Arrangement
1 21. Cathode
2. Anode
Cathode band (Light Blue)
1SS119TA
Package Name : MHDPackage Code : GRZZ0002ZC-A
Taping Abbreviation (Quantity)
TA (5,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM 35 V Reverse voltage VR 30 V Average rectified current IO 150 mA Peak forward current IFM 450 mA Non-Repetitive peak forward surge current IFSM * 1 A Power dissipation Pd 250 mW Junction temperature Tj 175 °C Storage temperature Tstg –65 to +175 °C Note: Within 1s forward surge current.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.8 V IF = 10 mA Reverse current IR — — 0.1 µA VR = 30 V Capacitance C — — 3.0 pF VR = 1 V, f = 1 MHz Reverse recovery time trr * — — 3.5 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Note: Reverse recovery time test circuit
0.1 µF
DCSupply
PulseGenerator
Ro = 50 Ω Rin = 50 ΩSamplingOscilloscope
3 kΩ
Trigger
1SS119
195
Main Characteristics
0 0.2 0.80.6 1.00.4 1.2
Ta =
-25°C
Ta =
25°C
Ta =
125°C
Ta =
75°C
0 10 30 4020 50
Ta = 75°C
Ta = 125°C
Ta = 25°C
1.0 10
10
1.0
100
f = 1MHz
10–4
10–3
10–2
10–1
0.1
10–5
10–6
10–4
10–7
10–8
10–9
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)R
eve
rse
cu
rre
nt I R
(
A)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t I F
(
A)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
196
1SS120 Silicon Epitaxial Planar Diode for High Speed Switching
Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 3.5 ns max)
Ordering Information and Pin Arrangement
1 2
1. Cathode
2. Anode
Cathode band (Light Blue)
1SS120TA
Package Name : MHDPackage Code : GRZZ0002ZC-A
Taping Abbreviation (Quantity)
TA (5,000 pcs / reel)
1
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM 70 V Reverse voltage VR 60 V Average rectified current IO 150 mA Peak forward current IFM 450 mA Non-Repetitive peak forward surge current IFSM * 1 A Power dissipation Pd 250 mW Junction temperature Tj 175 °C Storage temperature Tstg –65 to +175 °C Note: Within 1s forward surge current.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.8 V IF = 10 mA Reverse current IR — — 0.1 µA VR = 60 V Capacitance C — — 3.0 pF VR = 1 V, f = 1 MHz Reverse recovery time trr * — — 3.5 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Note: Reverse recovery time test circuit
0.1 µF
DCSupply
PulseGenerator
Ro = 50 Ω Rin = 50 ΩSamplingOscilloscope
3 kΩ
Trigger
1SS120
197
Main Characteristics
0 0.2 0.80.6 1.00.4 1.2
Ta =
-25°C
Ta =
25°C
Ta =
125°C
Ta =
75°C
0 20 60 8040 100
Ta = 75°C
Ta = 125°C
Ta = 25°C
1.0 10
10
1.0
100
f = 1MHz
10–4
10–3
10–2
10–1
0.1
10–5
10–6
10–4
10–7
10–8
10–9
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)R
eve
rse
cu
rre
nt I R
(
A)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t I F
(
A)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
198
HSM123 Silicon Epitaxial Planar Diode for High Speed Switching
Features • Low capacitance, proof against high voltage. • Fast recovery time. (trr = 3.0ns max)
Ordering Information and Pin Arrangement
2 1
3
1. Cathode2
2. Anode1
3. Cathode1
Anode2(Top View)
2 1
A9
(Top view)
3HSM123TR, HSM123TL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
Absolute Maximum Ratings *1 (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Peak forward current IFM 300 mA Non-Repetitive peak forward surge current IFSM *2 4 A Average rectified current IO 100 mA Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Per one device. 2. Within 1 μs forward surge current.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF — 0.70 1.0 V IF = 10 mA VF — 0.79 1.0 V IF = 50 mA
Forward voltage
VF — 0.85 1.2 V IF = 100 mA Reverse current IR — — 0.1 μA VR = 80 V Capacitance C — 1.0 4.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 3.0 ns IF = 10 mA, VR = 6 V, RL = 50 Ω
HSM123
199
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0 0
0.1
10
100101.0
1.0
f=1MHz
20 8060 10040
10-5
10-6
10-4
10-7
10-8
10-9
10-2
10-3
10-5
10-6
10-7
10-8
10-9
Fig.3 Capacitance vs. Reverse Voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
Re
ve
rse
cu
rre
nt
I R
(
A)
Fig.2 Reverse Current vs. Reverse Voltage
Reverse voltage VR (V)
Fig.1 Forward Current vs. Forward Voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t
I F (
A)
200
HSM124S Silicon Epitaxial Planar Diode for Switching
Features • Low reverse current. (IR = 0.01 μA max)
Ordering Information and Pin Arrangement
2 1
3
1. Cathode2
2. Anode1
3. Cathode1
Anode2(Top View)
2 1
A1
(Top view)
3HSM124STR, HSM124STL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
Absolute Maximum Ratings *1 (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Peak forward current IFM 300 mA Non-Repetitive peak forward surge current IFSM *2 4 A Average rectified current IO 100 mA Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Per one device. 2. Within 1 μs forward surge current.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF — — 1.0 V IF = 10 mA VF — — 1.0 V IF = 50 mA
Forward voltage
VF — — 1.2 V IF = 100 mA Reverse current IR — — 0.01 μA VR = 80 V Capacitance C — — 4.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 100 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Note: 1. Per one device
HSM124S
201
Main Characteristics
10-5
10-6
10-4
10-7
10-8
10-9
10-2
10-3
10-10
Fo
rwa
rd c
urr
en
t
I F
(A
)
0 0.2 0.4 0.6 0.8 1.0
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
0.1
10
100101.0
1.0
f=1MHz
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
0 20 8060 10040
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
10-9
10-10
10-11
10-12
10-13
Re
ve
rse
cu
rre
nt
I R
(
A)
10-11
202
HSM221C Silicon Epitaxial Planar Diode for High Speed Switching
Features • Low capacitance, proof against high voltage. • Fast recovery time. (trr = 3.0ns max)
Ordering Information and Pin Arrangement
2 1
A2
(Top view)
3HSM221CTR, HSM221CTL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
2 1
3
1. NC
2. Anode
3. Cathode(Top View)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Peak forward current IFM 300 mA Non-Repetitive peak forward surge current IFSM *1 4 A Average rectified current IO 100 mA Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at duration of 1 μs.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF — 0.76 1.0 V IF = 10 mA VF — 0.88 1.0 V IF = 50 mA
Forward voltage
VF — 0.97 1.2 V IF = 100 mA Reverse current IR — — 0.1 μA VR = 80 V Capacitance C — 0.5 2.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 3.0 ns IF = 10 mA, VR = 6 V, RL = 50 Ω
HSM221C
203
Main Characteristics
f=1MHz
Ta= 7
5°C
Ta= -
25
°C
Ta= 2
5°C
Ta= 75°C
Ta= 25°C
Ta= 50°C
Ta= 0°C
Ta= -25°C
1.0 10
10
1.0
0.1100
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
0 0.2 0.4 0.6 0.8 1.0
10-1
10-2
10-3
10-4
10-5
10-6
Fo
rwa
rd c
urr
en
t I F
(
A)
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
0 20 40 60 80 100
10-4
10-5
10-6
10-7
10-8
10-9
10-10
10-11
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)R
eve
rse
cu
rre
nt I R
(
A)
204
HSM223C Silicon Epitaxial Planar Diode for High Speed Switching
Features • Low capacitance, proof against high voltage. • Fast recovery time. (trr = 3.0 ns max)
Ordering Information and Pin Arrangement
2 1
A8
(Top view)
3HSM223CTR, HSM223CTL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
2 1
3
1. NC
2. Cathode
3. Anode(Top View)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Peak forward current IFM 300 mA Non-Repetitive peak forward surge current IFSM *1 4 A Average rectified current IO 100 mA Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at duration of 1 μs.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF — 0.76 1.0 V IF = 10 mA VF — 0.88 1.0 V IF = 50 mA
Forward voltage
VF — 0.97 1.2 V IF = 100 mA Reverse current IR — — 0.1 μA VR = 80 V Capacitance C — 0.5 2.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 3.0 ns IF = 10 mA, VR = 6 V, RL = 50 Ω
HSM223C
205
Main Characteristics
f=1MHz
Ta= 7
5°C
Ta= -
25
°C
Ta= 2
5°C
Ta= 75°C
Ta= 25°C
Ta= 50°C
Ta= 0°C
Ta= -25°C
1.0 10
10
1.0
0.1100
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
0 0.2 0.4 0.6 0.8 1.0
10-1
10-2
10-3
10-4
10-5
10-6
Fo
rwa
rd c
urr
en
t I F
(
A)
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
0 20 40 60 80 100
10-4
10-5
10-6
10-7
10-8
10-9
10-10
10-11
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)R
eve
rse
cu
rre
nt I R
(
A)
206
HSM2836C Silicon Epitaxial Planar Diode for High Speed Switching
Features • Fast recovery time. (trr = 20 ns max)
Ordering Information and Pin Arrangement
2 1
A4
(Top view)
3HSM2836CTR, HSM2836CTL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
1. Cathode
2. Cathode
3. Anode(Top View)
2 1
3
Absolute Maximum Ratings *1 (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Peak forward current IFM 300 mA Non-Repetitive peak forward surge current IFSM *2 4 A Average rectified current IO 100 mA Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Per one device. 2. Within 1 μs forward surge current.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF — 0.72 1.0 V IF = 10 mA VF — 0.83 1.0 V IF = 50 mA
Forward voltage
VF — 0.90 1.2 V IF = 100 mA Reverse current IR — — 0.1 μA VR = 80 V Capacitance C — 2.5 4.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 20 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Note: 1. Per one device.
HSM2836C
207
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100
1.0 10
10
1.0
0.1100
10-1
10-2
10-3
10-4
10-5
10-6
10-4
10-5
10-6
10-7
10-8
10-9
10-10
10-11
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
f=1MHz
Ta= 7
5°C
Ta= -
25
°C
Ta= 2
5°C
Ta= 75°C
Ta= -25°C
Ta= 25°C
Ta= 50°C
Ta= 0°C
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
Re
ve
rse
cu
rre
nt
I R
(
A)
Fo
rwa
rd c
urr
en
t I F
(
A)
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
208
HSM2838C Silicon Epitaxial Planar Diode for High Speed Switching
Features • Fast recovery time. (trr = 3.0 ns max)
Ordering Information and Pin Arrangement
2 1
3
1. Anode
2. Anode
3. Cathode
(Top View)
2 1
A6
(Top view)
3HSM2838CTR, HSM2838CTL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
Absolute Maximum Ratings *1 (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Peak forward current IFM 300 mA Non-Repetitive peak forward surge current IFSM *2 4 A Average rectified current IO 100 mA Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Per one device. 2. Within 1 μs forward surge current.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF — 0.76 1.0 V IF = 10 mA VF — 0.88 1.0 V IF = 50 mA
Forward voltage
VF — 0.97 1.2 V IF = 100 mA Reverse current IR — — 0.1 μA VR = 80 V Capacitance C — 0.5 2.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 3.0 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Note: 1. Per one device.
HSM2838C
209
Main Characteristics
f=1MHz
Ta= 7
5°C
Ta= -
25
°C
Ta= 2
5°C
Ta= 75°C
Ta= 25°C
Ta= 50°C
Ta= 0°C
Ta= -25°C
1.0 10
10
1.0
0.1100
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
0 0.2 0.4 0.6 0.8 1.0
10-1
10-2
10-3
10-4
10-5
10-6
Fo
rwa
rd c
urr
en
t I F
(
A)
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
0 20 40 60 80 100
10-4
10-5
10-6
10-7
10-8
10-9
10-10
10-11
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)R
eve
rse
cu
rre
nt I R
(
A)
210
HSD119, HSC119, HSU119 Silicon Epitaxial Planar Diode for High Speed Switching
Features • Low capacitance. (C = 2.0 pF max) • Short reverse recovery time. (trr = 3.0 ns max) • Lineup of environmental friendly Halogen free type (HSU119-N)
Ordering Information and Pin Arrangement
1 2H1
Package Name : UFP
Package Code : PWSF0002ZA-A
Package Name : SFP
Package Code: PUSF0002ZB-A
1 2H1
HSC119TRF, HSC119CKRFHSD119KRF HSU119TRF
HSU119-NTRF(Halogen-free type)
Package Name : URP
Package Code : PTSP0002ZA-A
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
1 2H1
Cathode mark
Mark
1. Cathode
2. Anode
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Peak forward current IFM 300 mA Non-Repetitive peak forward surge current IFSM *1 4 A Average rectified current IO 100 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Within 1μs forward surge current.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.8 V IF = 10 mA Forward voltage VF2 — — 1.2 V IF = 100 mA
Reverse current IR — — 0.1 μA VR = 80 V Capacitance C — — 2.0 pF VR = 0 V, f = 1 MHz Reverse recovery time*1 trr — — 3.0 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Notes: 1. Reverse recovery time test circuit.
3kΩ0.1μF
Ro = 50Ω Rin = 50Ω
DCSupply
PulseGenerator
SamplingOscilloscope
Trigger 2. In the SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HSD119, HSC119, HSU119
211
Main Characteristics
0 0.2 0.80.6 1.00.4
1.0
1.2
Ta =
-25°C
Ta =
25°C
Ta =
75°C
0 20 40 60 80 100
Ta=50°C
Ta=75°C
Ta=25°C
10–2
10–1
10–3
10–4
10–5
10–6
10–8
10–7
10–9
10–10
10–11
1.0
10
1.0
0.1100.1
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
f = 1MHz
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I F
(
A)
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Ca
pa
cita
nce
C
(p
F)
212
HSB123 Silicon Epitaxial Planar Diode for High Speed Switching
Features • Low capacitance, proof against high voltage. • Fast recovery time. (trr = 3.0 ns max)
Ordering Information and Pin Arrangement
2 1
3
1. Cathode2
2. Anode1
3. Cathode1
Anode2(Top View)
2 1
A9
(Top view)
3HSB123TR, HSB123TL
Package Name : CMPAK
Package Code: PTSP0003ZB-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Peak forward current IFM *1 300 mA Non-Repetitive peak forward surge current IFSM *2 4 A Average rectified current IO *1 100 mA Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Two device total. 2. Value at duration of 1 μs, two device total.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 1.0 V IF = 10 mA VF2 — — 1.0 V IF = 50 mA
Forward voltage
VF3 — — 1.2 V IF = 100 mA Reverse current IR — — 0.1 μA VR = 80 V Capacitance C — — 2.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 3.0 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Note: 1. Per one device.
HSB123
213
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0 0
0.1
10
100101.0
1.0
f=1MHz
20 8060 10040
10-5
10-6
10-4
10-7
10-8
10-9
10-2
10-3
10-10
10-6
10-7
10-8
10-9
10-10
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
Re
ve
rse
cu
rre
nt
I R
(
A)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t
I F (
A)
214
HSB124S Silicon Epitaxial Planar Diode for Switching
Features • Low reverse current. (IR = 0.01 μA max)
Ordering Information and Pin Arrangement
2 1
3
1. Cathode
2. Anode
3. Cathode
Anode(Top View)
2 1
A1
(Top view)
3HSB124STR, HSB124STL
Package Name : CMPAK
Package Code: PTSP0003ZB-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Peak forward current IFM *1 300 mA Non-Repetitive peak forward surge current IFSM *2 4 A Average rectified current IO *1 100 mA Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Two device total. 2. Value at duration of 1 μs, two device total.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.2 V IF = 100 mA Reverse current IR — — 0.01 μA VR = 80 V Capacitance C — — 4.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 100 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Note: 1. Per one device
HSB124S
215
Main Characteristics
10-5
10-6
10-4
10-7
10-8
10-9
10-2
10-3
10-10
Fo
rwa
rd c
urr
en
t
I F
(A
)
0 0.2 0.4 0.6 0.8 1.0
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
0.1
10
100101.0
1.0
f=1MHz
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
0 20 8060 10040
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
10-9
10-10
10-11
10-12
10-13
Re
ve
rse
cu
rre
nt
I R
(
A)
10-11
216
HSB2836 Silicon Epitaxial Planar Diode for High Speed Switching
Features • Fast recovery time. (trr = 20 ns max)
Ordering Information and Pin Arrangement
2 1
3
1. Cathode
2. Cathode
3. Anode
(Top View)
2 1
A4
(Top view)
3HSB2836TR, HSB2836TL
Package Name : CMPAK
Package Code: PTSP0003ZB-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Peak forward current IFM *1 300 mA Non-Repetitive peak forward surge current IFSM *2 4 A Average rectified current IO *1 100 mA Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Two device total. 2. Value at duration of 1 μs, two device total.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF — — 1.0 V IF = 10 mA VF — — 1.0 V IF = 50 mA
Forward voltage
VF — — 1.2 V IF = 100 mA Reverse current IR — — 0.1 μA VR = 80 V Capacitance C — — 4.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 20 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Note: 1. Per one device.
HSB2836
217
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0 0
0.1
10
100101.0
1.0
f=1MHz
20 8060 10040
10-5
10-6
10-4
10-7
10-8
10-9
10-2
10-3
10-10
10-6
10-7
10-8
10-9
10-10
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
Re
ve
rse
cu
rre
nt
I R
(
A)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t
I F (
A)
218
HSB2838 Silicon Epitaxial Planar Diode for High Speed Switching
Features • Fast recovery time. (trr = 3.0 ns max).
Ordering Information and Pin Arrangement
2 1
3
1. Cathode
2. Cathode
3. Anode
(Top View)
2 1
A6
(Top view)
3HSB2838TR, HSB2838TL
Package Name : CMPAK
Package Code: PTSP0003ZB-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Peak forward current IFM *1 300 mA Non-Repetitive peak forward surge current IFSM *2 4 A Average rectified current IO *1 100 mA Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Two device total. 2. Value at duration of 1 μs, two device total.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 1.0 V IF = 10 mA VF2 — — 1.0 V IF = 50 mA
Forward voltage
VF3 — — 1.2 V IF = 100 mA Reverse current IR — — 0.1 μA VR = 80 V Capacitance C — — 2.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 3.0 ns IF = 10 mA, VR = 6 V, RL = 50 Ω Note: 1. Per one device.
HSB2838
219
Main Characteristics
f=1MHz
10-6
10-3
10-4
10-2
10-7
10-8
10-5
10-9
10-7
10-8
10-9
10-6
10-1010-10
1.0 10
10
1.0
0.1100
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Capacitance C
(
pF
)
Revers
e c
urr
ent I R
(
A)
0 20 8060 10040
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
0 0.2 0.4 0.6 0.8 1.0
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Forw
ard
curr
ent I F
(
A)
220
HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching
Features • High reverse voltage. (VR = 250 V)
Ordering Information and Pin Arrangement
Cathode mark
Mark
1 2T
1. Cathode
2. Anode
HSU83TRF
Package Name : URPPackage Code : PTSP0002ZA-A
Taping Abbreviation (Quantity)TRF (3,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM 300 V Reverse voltage VR 250 V Peak forward current IFM 300 mA Non-Repetitive peak forward surge current IFSM *1 2 A Average rectified current IO 100 mA Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at duration of 10 ms.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.2 V IF = 100 mA
IR1 — — 0.2 VR = 250 V Reverse current IR2 — — 100
μA VR = 300 V
Capacitance C — — 3.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 100 ns IF = IR = 30 mA, Irr = 3 mA
HSU83
221
Main Characteristics
1.00 0.2 0.4 0.6 0.8 2500 50 200150100
1.0
10
1.0
0.110
f = 1MHz
0.1
10–2
10–4
10–3
10–5
10–6
10–8
10–7
10–9
10–5
10–6
10–8
10–7
10–9
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I F
(
A)
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
222
RKS101KG Silicon Epitaxial Planar Diode for High Voltage Switching
Features • Short reverse recovery time enable fast switching.
Ordering Information and Pin Arrangement
RKS101KGTRF
Package Name : URPPackage Code : PTSP0002ZA-A
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel) 1 2H3
Cathode mark
Mark
1. Cathode
2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM 420 V Reverse voltage VR 400 V Peak forward current IFM 300 mA Non-Repetitive peak forward surge current IFSM *1 2 A Average rectified current IO *2 100 mA Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. 10 ms sine wave 1 pulse. 2. See from Fig.4 to Fig.6.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.5 V IF = 100 mA Reverse current IR — — 10 µA VR = 400 V Capacitance C — — 3 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 100 ns IF = IR = 30mA, Irr = 3mA, RL = 50 ΩThermal resistance Rth(j-a) — 600 — °C/W Polyimide board *1 Note: 1. Polyimide board
Unit: mm
3.0
0.8
1.5
20h×15w×0.8t
1.5
RKS101KG
223
Main Characteristics
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Revers
e c
urr
ent I R
(
A)
Forw
ard
curr
ent I F
(
A)
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Capacitance C
(p
F)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
0.20 0.4 0.8 1.21.0
10-1
10-2
10-3
10-4
10-5
10-6
10-7
10-8
0.6
Pulse test
5000 100 400300200
10-5
10-6
10-7
10-8
10-9
Ta = 25°C
Ta = 75°C
Ta = 50°C
Pulse test
1.0
1.0
0.1100.1 100
f = 1MHz
Pulse test
Ta = 75°C
Ta = 50°C
Ta = 25°C
RKS101KG
224
Revers
e p
ow
er
dis
sip
ation P
d (
W)
Avera
ge r
ectified c
urr
ent I O
(
A)
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Fig.4 Forward power dissipation vs. Forward current
Forward current IF (A)
Forw
ard
pow
er
dis
sip
ation P
d (
W)
0 0.1
D=1/6
D=1/3
DC
0.05
t
T
0AD = —
T
t
Ta = 25°C
0.15
D=1/2
0.2
0.05
0.1
0.15 Sin
0
0.04
0.02
0.06
0.08
00 50 10025 75 125-25
0.1
0.12 VR = 200V
Tj = 150°C
Rth(j-a) = 600°C/W
D=1/3
Sin(θ=180°)
D=1/6
DC
D=1/2
150
0.05
0 100 300
D=1/2
D=2/3
Sin
D=5/6
t
T
0V
D = —T
t
Tj = 150°C
0
0.1
0.15
0.2
200 400 500
225
HSB226S, HSB226WK Silicon Schottky Barrier Diode for High Speed Switching
Features • Low reverse current, Low capacitance.
Ordering Information and Pin Arrangement
HSB226S HSB226WK
E7 E6
HSB226STR , HSB226WKTR
Package Name : CMPAK
Package Code: PTSP0003ZB-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
(Top view)(Top view)
2 1
3
1. Cathode 2
2. Anode 1
3. Cathode 1
Anode 2
1. Anode
2. Anode
3. Cathode
2 1
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 25 V Non-Repetitive peak forward surge current IFSM *1 *2 200 mA Forward current IF *2 50 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. 10 ms sine wave 1 pulse 2. Two device total
Electrical Characteristics * (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.33 IF = 1 mA Forward voltage VF2 — — 0.38
V IF = 5 mA
Reverse current IR — — 450 nA VR = 20 V Capacitance C — — 2.80 pF VR = 1 V, f = 1 MHz Note: Per one device
HSB226S, HSB226WK
226
Main Characteristics
10
10
1.0
0.10.1 1.0
f = 1MHz
Capacitance C
(
pF
)
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
1.00 0.4 0.60.2 0.8
10–1
10–7
10–3
10–5
101
10–2
10–8
10–4
10–6
100
Ta = 25°C
Ta = 75°C
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Forw
ard
curr
ent I F
(
A)
0 10
10–4
40
10–7
3020
10–5
10–6
10–8
Ta = 25°C
Ta = 75°C
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltageR
evers
e c
urr
ent I R
(
A)
227
HSB276AS Silicon Schottky Barrier Diode for Balanced Mixer
Features • High forward current, Low capacitance. • HSB276AS which is interconnected in series configuration is designed for balanced mixer use.
Ordering Information and Pin Arrangement
HSB276AS
E8
HSB276ASTR
Package Name : CMPAK
Package Code: PTSP0003ZB-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
(Top view)
1. Cathode 2
2. Anode 1
3. Cathode 1
Anode 2
2 1
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 5 V Reverse voltage VR 3 V Average rectified current IO *1 30 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Per one device
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 3 — — V IR = 1 mA Reverse current IR — — 50 μA VR = 0.5 V Forward current IF 35 — — mA VF = 0.5V Capacitance C — — 0.90 pF VR = 0.5 V, f = 1 MHz Capacitance deviation ΔC — — 0.10 pF VR = 0.5 V, f = 1 MHz ESD-Capability *2 — 30 — — V C = 200 pF, R = 0 Ω, Both forward and
reverse direction 1 pulse. Notes: 1. Per one device 2. Failure criterion ; IR ≥ 100 μA at VR = 0.5 V
HSB276AS
228
Main Characteristics
0 1.0 5.04.03.02.0
0.1 1.0
10
1.0
0.110
f=1MHz
10–3
10–4
10–2
10–5
10–1
0 0.2 0.4 0.6 0.8 1.010–6
10–5
10–4
10–3
10–2
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V) Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Revers
e c
urr
ent I R
(
A)
Fo
rwa
rd c
urr
en
t I F
(
A)
Capacitance
C
(
pF
)
Ta = 25°C
Ta = 75°C
Ta = 25°C
Ta = 75°C
229
HSB276S Silicon Schottky Barrier Diode for Balanced Mixer
Features • High forward current, Low capacitance. • HSB276S which is interconnected in series configuration is designed for balanced mixer use.
Ordering Information and Pin Arrangement
C2
HSB276STR
Package Name : CMPAK
Package Code: PTSP0003ZB-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
(Top view)
1. Cathode 2
2. Anode 1
3. Cathode 1
Anode 2
2 1
3
(Top view)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 3 V Average rectified current IO *1 30 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Per one device
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 3 — — V IR = 1 mA Reverse current IR — — 50 μA VR = 0.5 V Forward current IF 35 — — mA VF = 0.5V Capacitance C — — 0.90 pF VR = 0.5 V, f = 1 MHz Capacitance deviation ΔC — — 0.10 pF VR = 0.5 V, f = 1 MHz ESD-Capability *2 — 30 — — V C = 200 pF, R = 0 Ω, Both forward and
reverse direction 1 pulse. Notes: 1. Per one device 2. Failure criterion ; IR ≥ 100 μA at VR = 0.5 V
HSB276S
230
Main Characteristics
0 1.0 5.04.03.02.0
0.1 1.0
10
1.0
0.110
f=1MHz
10–3
10–4
10–2
10–5
10–1
0 0.2 0.4 0.6 0.8 1.010–6
10–5
10–4
10–3
10–2
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V) Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Revers
e c
urr
ent I R
(
A)
Fo
rwa
rd c
urr
en
t I F
(
A)
Capacitance
C
(
pF
)
231
HSB88AS, HSB88WA, HSB88WK, HSB88YP Silicon Schottky Barrier Diode for High Speed Switching
Features • Low reverse current, Low capacitance. • CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information and Pin Arrangement
HSB88WAHSB88ASHSB88YP
C1 C7
HSB88ASTR ,HSB88WATR, HSB88WKTR
Package Name : CMPAK
-4Package Code: PTSP0003ZB-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
(Top view)(Top view)
HBB88WK
C4
(Top view)
2 1
3
1. Cathode 2
2. Anode 1
3. Cathode 1
Anode 2
1. Cathode
2. Cathode
3. Anode
2 1
3
1. Anode
2. Anode
3 Cathode
2 1
3
21
34
C1
21
34
(Top view)
1. Anode
2. Anode
3. Cathode
4. Cathode
2 1
3
2 1
3
2 1
3
HSB88YPTR
Package Name : CMPAK-4
Package Code: PTSP0004ZB-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 10 V Average rectified current IO *1 15 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Per one device.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 0.350 — 0.420 IF = 1 mA Forward voltage VF2 0.500 — 0.580
V IF = 10 mA
IR1 — — 0.2 VR = 2 V Reverse current IR2 — — 10
µA VR = 10 V
Capacitance C — — 0.80 pF VR = 0 V, f = 1 MHz Capacitance deviation ∆C — — 0.10 pF VR = 0 V, f = 1 MHz Forward voltage deviation ∆VF — — 10 mV IF = 10 mA ESD-Capabilityme *2 — 30 — — V C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse. Notes: 1. Per one device. 2. Failure criterion ; IR > 0.4 µA at VR = 2 V
HSB88AS, HSB88WA, HSB88WK, HSB88YP
232
Main Characteristics
Re
ve
rse
cu
rre
nt
I R
(
A)
Ca
pa
cita
nce
C
(pF
)F
orw
ard
cu
rre
nt
IF
(A
)
0 0.1 0.2 0.3 0.4 0.5
10-5
10-6
10-4
10-3
10-2
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
0.6
0.1 1.0
10
1.0
0.1
10
f=1MHz
0 510-9
10-7
10-8
10 15
10-6
10-5
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ta = 25°C
Ta = 75°C
Ta = 75°C
Ta = 25°C
233
HSL226, HSD226, HSC226, HSU226 Silicon Schottky Barrier Diode for High Speed Switching
Features • Low Power consumption (Low reverse leak current) and high speed (Low capacitance). • Lineup of Environmental friendly Halogen free type (HSL226-N) (HSD226-N)
Ordering Information and Pin Arrangement
1 2S41 2V
HSC226TRF, HSC226KRF
1 2S4
HSU226TRF
1 2S7
Cathode mark
Mark
Cathode mark
Mark
Cathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
1. Cathode
2. Anode
Cathode mark
Mark
1. Cathode
2. Anode
Package Code: PXSF0002ZA-A
Taping Abbreviation (Quantity)
KRF (10,000 pcs / reel)
Package Name : SFP
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : EFP Package Name : UFP
Package Code : PWSF0002ZA-A
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
KRF (8,000 pcs / reel)
Package Name : URP
Package Code : PTSP0002ZA-A
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
HSL226KRF
HSL226-NKRF(Halogen-free type)
HSD226KRF
HSD226-NKRF(Halogen-free type)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 25 V Non-Repetitive Peak forward surge current IFSM * 200 mA Forward current IF 50 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 10 ms Sine Wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.33 V IF = 1 mA Forward voltage VF2 — — 0.38 V IF = 5 mA
Reverse current IR — — 450 nA VR = 20 V Capacitance C — — 2.80 pF VR = 1 V, f = 1 MHz Note: In the EFP, SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting
plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HSL226, HSD226, HSC226, HSU226
234
Main Characteristics
Ta=25°C
Ta=75°C
Pulse test
1.00 0.80.2 0.4 0.6
Ta=25°C
Ta=75°C
0.1
10
100.1
1.0
1.0
0 10 30 4020
10-4
10-6
10-5
10-8
10-7
10-3
10-2
10-1
100
101
10-8
10-7
10-6
10-5
10-4
f=1MHz
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t I
F (A
)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)R
eve
rse
cu
rre
nt I
R (A
)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
235
HSC276, HSU276 Silicon Schottky Barrier Diode for Detector and Mixer
Features • High forward current, Low capacitance.
Ordering Information and Pin Arrangement
1 2C2
Package Name : UFP
Package Code : PWSF0002ZA-A
HSC276TRF, HVC276KRF HSU276TRF
Package Name : URP
Package Code : PTSP0002ZA-A
Cathode mark
Mark
1. Cathode
2. Anode
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
1 23
Cathode mark
Mark
1. Cathode
2. Anode
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 3 V Average rectified current IO 30 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 10 ms Sine Wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 3 — — V IR = 1 mA Reverse current IR — — 50 μA VR = 0.5 V Forward current IF 35 — — mA VR = 0.5 V Capacitance C — — 0.85 pF VR = 0.5 V, f = 1 MHz ESD-Capability *1 — 30 — — V C = 200 pF, R = 0 Ω , Both forward
and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR ≥ 100 μA at VR = 0.5 V 2. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,
the solderability of the lead tip has been ignored. Please test and confirm before use.
HSC276, HSU276
236
Main Characteristics
0 1.0 5.04.03.02.0
0.1 1.0
10
1.0
0.110
f=1MHz
10–3
10–4
10–2
10–5
10–1
0 0.2 0.4 0.6 0.8 1.010–6
10–5
10–4
10–3
10–2
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V) Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Revers
e c
urr
ent I R
(
A)
Fo
rwa
rd c
urr
en
t I F
(
A)
Capacitance
C
(
pF
)
Ta = 25°C
Ta = 75°C
Ta = 25°C
Ta = 75°C
237
HSD276A, HSC276A, HSU276A Silicon Schottky Barrier Diode for Detector
Features • High forward current, Low capacitance.
Ordering Information and Pin Arrangement
1 2S5
Package Name : UFPPackage Code : PWSF0002ZA-A
Package Name : SFPPackage Code: PUSF0002ZB-A
1 2S2
HSC276ATRF, HSC276AKRFHSD276AKRF HSU276ATRF
Package Name : URPPackage Code : PTSP0002ZA-A
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
1 2S5
Cathode mark
Mark
1. Cathode
2. Anode
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 5 V Reverse voltage VR 3 V Average rectified current IO 30 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 3.0 — — V IR = 1 mA Reverse current IR — — 50 μA VR = 0.5 V Forward current IF 35 — — mA VF = 0.5 V Capacitance C — — 0.85 pF VR = 0.5 V, f = 1 MHz ESD-Capability *1 — 30 — — V C = 200 pF, R = 0 Ω, Both forward and
reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 μA at VR = 0.5 V 2. In the SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HSD276A, HSC276A, HSU276A
238
Main Characteristics F
orw
ard
cu
rre
nt
IF
(A
)C
ap
acita
nce
C
(pF
)
10
10
1.0
0.10.1 1.0
1.00 0.4 0.60.2 0.8 0 1.0
10-2
5.04.0
10-5
3.02.0
10-3
10-4
10-6
Re
ve
rse
cu
rre
nt
IR
(A)
10-2
10-5
10-3
10-4
10-1
f=1MHz
Ta = 75°C
Ta = 25°C
Ta = 75°C
Ta = 25°C
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltageFig.1 Forward current vs. Forward voltage
239
HSD278, HSC278 Silicon Schottky Barrier Diode for Detector
Features • Low forward voltage, Low capacitance.
Ordering Information and Pin Arrangement
1 2S6
HSC278TRF, HSC278KRF
1 2
HSD278KRF
Cathode mark
Mark
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Package Name : SFP
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : UFP
Package Code : PWSF0002ZA-A
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
KRF (8,000 pcs / reel)
S1
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Reverse voltage VR 30 V Non-Repetitive peak forward surge current IFSM * 200 mA Peak forward current IFM 150 mA Average rectified current IO 30 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.30 IF = 1 mA Forward voltage
VF2 — — 0.95 V
IF = 30 mA Reverse current IR — — 700 nA VR = 10 V Capacitance C — — 1.5 pF VR = 1 V, f = 1 MHz ESD-Capability *1 — 100 — — V C = 200 pF, RL = 0 Ω, Both forward and
reverse direction 1 pulse. Notes: 1. Failure criterion ; IR ≥ 1.4 µA at VR = 10 V. 2. In the SFP & UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HSD278, HSC278
240
Main Characteristics
Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage
Fig.3 Capacitance vs. Reverse voltage
1.0
Forward voltage VF (V)
Reverse voltage VR (V)
Reverse voltage VR (V)
Fo
rwa
rd c
urr
en
t
I F (
A)
Re
ve
rse
cu
rre
nt
I R
(
A)
Ca
pa
cita
nce
C
(
pF
)
0
0.1
10
100.1
1.0
15 20100 0.80.2 0.4 0.6
101
10-810-8
10-7
10-6
10-5
10-4
10-7
10-6
10-5
10-4
10-3
10-2
10-1
100
1.0
Ta = 25°C
Ta = 25°C
Ta = 75°C
5
f=1MHz
Ta = 75°C
241
RKD750KP, HSL285, HSC285, HSU285 Silicon Schottky Barrier Diode for Detector
Features • Low forward voltage, Low capacitance and High detection sensitivity. • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. (RKD750KP)
Ordering Information and Pin Arrangement
1 2C41 21
HSC285TRF, HSC285KRF
1
HSU285TRF
1 2S6
Cathode mark
MarkCathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
Cathode mark
Mark
1. Cathode
2. Anode
Package Code: PXSF0002ZA-A
HSL285KRF
Taping Abbreviation (Quantity)
KRF (10,000 pcs / reel)
Package Name : EFP Package Name : UFP
Package Code : PWSF0002ZA-A
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
KRF (8,000 pcs / reel)
Package Name : URP
Package Code : PTSP0002ZA-A
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
1. Cathode
2. Anode
Package Code: PXSN0002ZB-A
RKD750KP R
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : MP6
1
Cathode mark
Mark
2A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 2 V Average rectified current IO 5 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.15 IF = 0.1 mA Forward voltage VF2 — — 0.27
V IF = 1 mA
Capacitance C — 0.3 — pF VR = 0.5 V, f = 1 MHz ESD-Capability *1 — 10 — — V C = 200 pF, RL = 0 Ω, Both forward
and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR ≥ 100 µA at VR = 0.5 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package. 3. In the EFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use
RKD750KP, HSL285, HSC285, HSU285
242
Main Characteristics
0 0.2 0.40.30.1
10
1.0
0.1
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
10–3
10–5
10–2
10–4
10–6
0.5
Ca
pa
cita
nce
C
(
pF
)
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
0.1 1.0 10
Fo
rwa
rd c
urr
en
t I F
(
A)
0 2 431
10–3
10–5
10–2
10–4
10–6
5
Reverse voltage VR (V)R
eve
rse
cu
rre
nt
I R
(
A)
Ta = 25°C
Ta = 75°C
Fig.2 Reverse current vs. Reverse voltage
f = 1MHz
243
HSD88, HSC88, HSU88 Silicon Schottky Barrier Diode for Detector, Mixer
Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage.
Ordering Information and Pin Arrangement
1 2S3
Package Name : UFP
Package Code : PWSF0002ZA-A
Package Name : SFP
Package Code: PUSF0002ZB-A
1 2S3
HSC88TRF, HSC88KRFHSD88KRF
Package Name : URP
Package Code : PTSP0002ZA-A
Cathode mark
Mark
1. Cathode
2. Anode
1. Cathode
2. Anode
Cathode mark
Mark
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
1 29
Cathode mark
Mark
1. Cathode
2. Anode
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
KRF (8,000 pcs / reel)
HSU88TRF
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 10 V Average rectified current IO 15 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 0.350 — 0.420 IF = 1 mA Forward voltage VF2 0.500 — 0.580
V IF = 10 mA
IR1 — — 0.2 VR = 2 V Reverse current IR2 — — 10
µA VR = 10 V
Capacitance C — — 0.80 pF VR = 0 V, f = 1 MHz ESD-Capability *1 — 30 — — Ω C = 200 pF, Both forward and
reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 0.4 µA at VR = 2 V 2. Please do not use the soldering iron due to avoid high stress to the SFP package.
HSD88, HSC88, HSU88
244
Main Characteristics F
orw
ard
cu
rre
nt
IF
(A)
Ca
pa
cita
nce
C
(pF
)
10
10
1.0
0.1
f=1MHz
0.1 1.0
0 0.4 0.80.60.2
Ta= - 25°C
Ta= 75°C
Ta= 50°C
Ta= 25°C
86 10
Ta= 0°C
Ta= 25°C
Ta= 50°C
Ta= 75°C
0 2 4
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt
I R
(
A)
10-6
10-8
10-10
10-7
10-9
Ta= - 25°CTa= 0°C
10-2
10-4
10-6
10-3
10-5
Forward voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
245
RKD700KL, RKD700KK, RKD700KJ Silicon Schottky Barrier Diode for Backflow prevention
Features • Low reverse current, Low capacitance.
Ordering Information and Pin Arrangement
1 2C51 26
RKD700KJ P, RKD700KJ R
1 2S7
Cathode mark
Mark
Cathode mark
Mark
Cathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
1. Cathode
2. Anode
Package Code: PXSF0002ZA-A
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : SFP
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
R (8,000 pcs / reel)
Package Name : EFP Package Name : UFP
Package Code : PWSF0002ZA-A
Taping Abbreviation (Quantity)
P (4,000 pcs / reel)
R (8,000 pcs / reel)
RKD700KK RRKD700KL R
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Reverse voltage VR 30 V Non-Repetitive peak forward surge current IFSM * 200 mA Average rectified current IO 50 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 10 ms Sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — 0.11 0.14 IF = 1 µA VF2 — — 0.33 IF = 1 mA
Forward voltage
VF3 — — 0.43
V
IF = 10 mA IR1 — — 45 nA VR = 3 V Reverse current IR2 — — 1 µA VR = 30 V
Capacitance C — — 2.8 pF VR = 1 V, f = 1 MHz Note: In the EFP, SFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting
plane. Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use..
RKD700KL, RKD700KK, RKD700KJ
246
Main Characteristics
Ta=25°C
Ta=75°C
Pulse test
1.00 0.80.2 0.4 0.6
0.1
10
100.1
1.0
1.0
0 10 30 4020
Fo
rwa
rd c
urr
en
t I
F (A
)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Ca
pa
cita
nce
C
(p
F)
Re
ve
rse
cu
rre
nt I
R (A
)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
10-8
10-7
10-6
10-5
10-4
f=1MHz
10–1
10–3
10–4
10–5
10–8
10–2
10–7
10–6
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ta=75°C
Ta=25°C
247
RKD702KP, RKD702KL Silicon Schottky Barrier Diode for High Speed Switching
Features • Low Power consumption (Low reverse leak current) and high speed (Low capacitance). • Halogen free, Environmental friendly Package include Conformity to RoHS Directive.
Ordering Information and Pin Arrangement
H1 1 2
RKD702KLR
Cathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
Package Code: PXSN0002ZB-A
RKD702KPR
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : EFP
Package Code: PXSF0002ZA-A
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : MP6
Cathode mark
Mark
2M
RKD702KL-NR (Halogen-free type)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Non-Repetitive Peak forward surge current IFSM * 200 mA Forward current IF 50 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 10 ms Sine Wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.35 V IF = 1 mA Forward voltage VF2 — — 0.40 V IF = 5 mA IR1 — — 100 nA VR = 20 V Reverse current IR2 — — 250 nA VR = 30 V
Capacitance C — — 2.50 pF VR = 1 V, f = 1 MHz Note: Please do not use the soldering iron due to avoid high stress to the MP6 package.
RKD702KP, RKD702KL
248
Main Characteristics
100.1 1.0
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t I
F (A
)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
10-4
10-6
10-5
10-8
10-7
10-3
10-2
10-1
0 0.2 0.4 0.6
Ta=25°C
Ta=75°C
0.1 0.3 0.5
0.1
1.0
10
f = 1MHz
Ta=25°C
Pulse test
0 10 3020
10-8
10-7
10-6
10-5
10-9
Re
ve
rse
cu
rre
nt
IR
(A
)
Ta=75°C
249
RKD703KP, RKD703KL Silicon Schottky Barrier Diode for High Speed Switching
Features • Low Power consumption (Low reverse leak current) and high speed (Low capacitance). • Halogen free, Environmental friendly Package include Conformity to RoHS Directive. (RKD703KP) • We can support the lineup of environmental friendly halogen free type on your demand. (RKD703KL)
Ordering Information and Pin Arrangement
N1 1 2
RKD703KLR
Cathode mark
Mark
1. Cathode
2. Anode1. Cathode
2. Anode
Package Code: PXSN0002ZB-A
RKD703KPR
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : EFP
Package Code: PXSF0002ZA-A
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : MP6
Cathode mark
Mark
2X
RKD703KL-NR (Halogen-free type)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Forward current IF 50 mA Non-Repetitive Peak forward surge current IFSM * 200 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 10 ms Sine Wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.25 V IF = 1 mA VF2 — — 0.30 V IF = 5 mA
Forward voltage
VF3 — — 0.35 V IF = 20 mA IR1 — — 6 µA VR = 10 V Reverse current IR2 — — 50 µA VR = 30 V
Capacitance C — — 5 pF VR = 1 V, f = 1 MHz Notes: 1. Please do not use the soldering iron due to avoid high stress to the MP6 package. 2. In the EFP package, some lead is exposed because the tip of the llead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
RKD703KP, RKD703KL
250
Main Characteristics
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t I
F (A
)
Re
ve
rse
cu
rre
nt
IR
(A
)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
10-4
10-6
10-5
10-8
10-7
10-3
10-2
10-1
0 0.2 0.4 0.60.1 0.5
100.1 1.00.1
1.0
10
Ta=25°C
Ta=75°C
0.3
Ta=50°C 10-4
10-5
10-6
10-7
10-8
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
0 10 3020
10-2
10-3
5 15 25
Ta=25°C
Ta=75°C
Ta=50°C
f = 1MHz
Pulse test Pulse test
251
RKD751KP Silicon Schottky Barrier Diode for Detector
Features • High forward current, Low capacitance. • Halogen free, Environmental friendly Package include Conformity to RoHS Directive.
Ordering Information and Pin Arrangement
11. Cathode
2. Anode
Package Code: PXSN0002ZB-A
RKD751KPR
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : MP6Cathode mark
Mark
2K
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 5 V Reverse voltage VR 3 V Average rectified current IO 30 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 3.0 — — V IR = 1 mA Reverse current IR — — 50 μA VR = 0.5 V Forward current IF 35 — — mA VF = 0.5 V Capacitance C — — 1.0 pF VR = 0.5 V, f = 1 MHz ESD-Capability *1 — 30 — — V C = 200 pF, RL = 0 Ω, Both forward
and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 μA at VR = 0.5 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package.
RKD751KP
252
Main Characteristics
0 1.0 5.04.03.02.0
0.1 1.0
10
1.0
0.110
f=1MHz
10–3
10–4
10–2
10–5
10–1
10–6
10–5
10–4
10–3
10–2
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V) Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
vers
e c
urr
en
t I R
(
A)
Fo
rward
cu
rren
t I F
(
A)
Ca
pa
cita
nce
C
(
pF
)
Ta = 25°C
Ta = 75°C
0.50 0.2 0.30.1 0.4
Ta = 75°C
Ta = 25°C
253
HSM276AS, HSM276ASR Silicon Schottky Barrier Diode for Balanced Mixer
Features • High forward current, Low capacitance. • HSM276AS and HSM276ASR which is interconnected in series configuration is designed for balanced mixer use.
Ordering Information and Pin Arrangement
HSM276AS HSM276ASR
S19 S20
HSM276ASTR ,HSM276ASRTR
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
(Top view)(Top view)
2 1
3
1. Cathode 2
2. Anode 1
3. Cathode 1
Anode 2
1. Anode 1
2. Cathode 2
3. Cathode 1
Anode 2
2 1
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 5 V Reverse voltage VR 3 V Average rectified current IO *1 30 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Per one device
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 3.0 — — V IR = 1 mA Reverse current IR — — 50 µA VR = 0.5 V Forward current IF 35 — — mA VF = 0.5V Capacitance C — — 0.90 pF VR = 0.5 V, f = 1 MHz Capacitance deviation ∆C — — 0.10 pF VR = 0.5 V, f = 1 MHz ESD-Capability *2 — 30 — — V C = 200 pF, R = 0 Ω , Both forward and
reverse direction 1 pulse. Notes: 1. Per one device 2. Failure criterion ; IR ≥ 100 µA at VR = 0.5 V
HSM276AS, HSM276ASR
254
Main Characteristics
0 1.0 5.04.03.02.0
0.1 1.0
10
1.0
0.110
f=1MHz
10–3
10–4
10–2
10–5
10–1
0 0.2 0.4 0.6 0.8 1.010–6
10–5
10–4
10–3
10–2
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V) Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Revers
e c
urr
ent I R
(
A)
Fo
rwa
rd c
urr
en
t I F
(
A)
Capacitance
C
(
pF
)
Ta = 25°C
Ta = 75°C
Ta = 25°C
Ta = 75°C
255
HSM276S, HSM276SR Silicon Schottky Barrier Diode for Balanced Mixer
Features • High forward current, Low capacitance. • HSM276S and HSM276SR which is interconnected in series configuration is designed for balanced mixer use.
Ordering Information and Pin Arrangement
HSM276S HSM276SR
C2 C9
HSM276STR ,HSM276SRTR
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
(Top view)(Top view)
2 1
3
1. Cathode 2
2. Anode 1
3. Cathode 1
Anode 2
1. Anode 1
2. Cathode 2
3. Cathode 1
Anode 2
2 1
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 3 V Average rectified current IO *1 30 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Per one device
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 3.0 — — V IR = 1 mA Reverse current IR — — 50 μA VR = 0.5 V Forward current IF 35 — — mA VF = 0.5V Capacitance C — — 0.90 pF VR = 0.5 V, f = 1 MHz Capacitance deviation ΔC — — 0.10 pF VR = 0.5 V, f = 1 MHz ESD-Capability *2 — 30 — — V C = 200 pF, R = 0 Ω, Both forward and
reverse direction 1 pulse. Notes: 1. Per one device 2. Failure criterion ; IR ≥ 100 μA at VR = 0.5 V
HSM276S, HSM276SR
256
Main Characteristics
0 1.0 5.04.03.02.0
0.1 1.0
10
1.0
0.110
f=1MHz
Ta = 75°C
Ta = 25°C
10–3
10–4
10–2
10–5
10–1
0 0.2 0.4 0.6 0.8 1.010
–6
10–5
10–4
10–3
10–2
Ta = 75°C
Ta = 25°C
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V) Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fo
rwa
rd c
urr
en
t I F
(
A)
Ca
pa
cita
nce
C
(
pF
)
257
HSM88AS, HSM88ASR, HSM88WA, HSM88WK Silicon Schottky Barrier Diode for Balanced Mixer
Features • Proof against high voltage.
Ordering Information and Pin Arrangement
HSM88WAHSM88AS HSM88ASR
C1 C3 C7
HSM88ASTR ,HSM88ASRTR, HSM88WATR, HSM88WKTR
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
Outline
(Top view)(Top view)(Top view)
HSM88WK
C4
(Top view)
2 1
3
1. Cathode 2
2. Anode 1
3. Cathode 1
Anode 2
1. Anode 1
2. Cathode 2
3. Cathode 1
Anode 22 1
3
1. Cathode
2. Cathode
3. Anode
2 1
3
1. Anode
2. Anode
3 Cathode
2 1
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 10 V Average rectified current IO *1 15 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Per one device.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 0.35 — 0.42 V IF = 1 mA Forward voltage VF2 0.50 — 0.58 V IF = 10 mA IR1 — — 0.2 μA VR = 2 V Reverse current IR2 — — 10 μA VR = 10 V
Capacitance C — — 0.85 pF VR = 0 V, f = 1 MHz Capacitance deviation ΔC — — 0.10 pF VR = 0 V, f = 1 MHz Forward voltage deviation ΔVF — — 10 mV IF = 10 mA ESD-Capability *2 — 30 — — V C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse. Notes: 1. Per one device 2. Failure criterion ; IR ≥ 0.4 μA at VR = 2 V
HSM88AS, HSM88ASR, HSM88WA, HSM88WK
258
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0 0 5 10 15
1.0
10
1.0
10
f = 1MHz
10–3
10–4
10–2
10–5
10–7
10–8
10–6
10–9
10–5
10–7
10–8
10–6
10–9
0.10.1
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(
pF
)
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fo
rwa
rd c
urr
en
t I F
(
A)
259
HRB0103A Silicon Schottky Barrier Diode for Low Voltage High Speed Switching, Rectifying
Features • Low forward voltage drop and suitable for high efficiency forward current.
Ordering Information and Pin Arrangement
E1
HRB0103ATR
Package Name : CMPAK
Package Code: PTSP0003ZB-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
(Top view)
1. NC
2. Anode
3. Cathode
2 1
3
(Top view)
2 1
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Average rectified current IO*1 100 mA Non-Repetitive peak forward surge current IFSM *2 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See Fig.5. 2. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.44 V IF = 100 mA Reverse current IR — — 50 µA VR = 30 V
HRB0103A
260
Main Characteristics
0 10 20 30 40 500 0.1 0.2 0.3 0.4 0.5
0
0.04
0.02
0.06
0.05
0.03
0.01
0 12040 8020 60 100
0.07D=1/6
Unit: mm
20h×15w×0.8t
0.8
1.5
2.0
3.0
0.08
sin waveD=1/3
D=1/2
DC
0
0.04
0.02
0.06
0.05
0.03
0.01
0 3010 205 15 25
0.07
D=1/2
Unit: mm
20h×15w×0.8t
0.8
1.5
2.0
3.0
0.08
sin wave
D=5/6
D=2/3
DC
Pulse test Pulse test
Fo
rwa
rd p
ow
er
dis
sip
atio
n
Pd
(W
)
VR is two device total
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
10–3
10–2
10–5
10–4
10–7
10–6
10–9
10–8
10–3
10–2
10–5
10–4
10–7
10–6
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
po
we
r d
issip
atio
n P
d (
W)
Fig4. Forward power dissipation vs. Peak reverse voltage
Peak reverse voltage VRM (V)
Fig3. Forward power dissipation vs. Average rectified current
Average rectified current Io (mA)
Re
ve
rse
cu
rre
nt I R
(
A)
Fo
rwa
rd c
urr
en
t I F
(
A)
tp
T
0Io
D =tp
T
tp
T
VR
0
D =tp
T
HRB0103A
261
0 15050 10025 75 1250
80
40
120
100
60
20
DC
D=1/6
D=1/3
sin wave
D=1/2Unit: mm
20hx15wx0.8t
0.8
1.5
1.5
3.0
1.5
Ambient temperature Ta (°C)
Fig.5 Average rectified current vs. Ambient temperature
tp
T
0Io
D =tp
T
VR = 30VAvera
ge r
ectified c
urr
ent I O
(
mA
)
262
HRB0103B Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying
Features • Low forward voltage drop and suitable for high efficiency forward current.
Ordering Information and Pin Arrangement
E2
HRB0103BTR
Package Name : CMPAK
Package Code: PTSP0003ZB-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
(Top view)
2 1
3
(Top view)
1. Cathode
2. Anode
3. Cathode
Anode2 1
3
Absolute Maximum Ratings *1 (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Average rectified current IO *2 100 mA Non-Repetitive peak forward surge current IFSM *3 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Per one device. 2. See Fig.5, Two device total. 3. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.44 V IF = 100 mA Reverse current IR — — 50 μA VR = 30 V
HRB0103B
263
Main Characteristics
0 10 20 30 40 500 0.1 0.2 0.3 0.4 0.5
0
0.04
0.02
0.06
0.05
0.03
0.01
0 12040 8020 60 100
0.07D=1/6
Unit: mm
20h×15w×0.8t
0.8
1.5
2.0
3.0
0.08
sin waveD=1/3
D=1/2
DC
0
0.04
0.02
0.06
0.05
0.03
0.01
0 3010 205 15 25
0.07
D=1/2
Unit: mm
20h×15w×0.8t
0.8
1.5
2.0
3.0
0.08
sin wave
D=5/6
D=2/3
DC
Pulse test Pulse test
Fo
rwa
rd p
ow
er
dis
sip
atio
n
Pd
(W
)
VR is two device total
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
10–3
10–2
10–5
10–4
10–7
10–6
10–9
10–8
10–3
10–2
10–5
10–4
10–7
10–6
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
po
we
r d
issip
atio
n P
d (
W)
Fig4. Forward power dissipation vs. Peak reverse voltage
Peak reverse voltage VRM (V)
Fig3. Forward power dissipation vs. Average rectified current
Average rectified current Io (mA)
Re
ve
rse
cu
rre
nt I R
(
A)
Fo
rwa
rd c
urr
en
t I F
(
A)
tp
T
0Io
D =tp
T
tp
T
VR
0
D =tp
T
HRB0103B
264
0 15050 10025 75 1250
80
40
120
100
60
20
DC
D=1/6
D=1/3
sin wave
D=1/2Unit: mm
20hx15wx0.8t
0.8
1.5
1.5
3.0
1.5
Ambient temperature Ta (°C)
Fig.5 Average rectified current vs. Ambient temperature
tp
T
0Io
D =tp
T
VR = 30VAvera
ge r
ectified c
urr
ent I O
(
mA
)
Two device total
265
HRB0502A Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
E3
HRB0502ATR
Package Name : CMPAK
Package Code: PTSP0003ZB-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
(Top view)
2 1
3
(Top view)
1.NC
2. Anode
3. Cathode
2 1
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 20 V Forward current IF *1 500 mA Non-Repetitive peak forward surge current IFSM *2 5 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.4 to Fig.6 2. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.4 V IF = 500 mA Reverse current IR — — 200 μA VR = 20 V Capacitance C — 120 — pF VR = 0 V, f = 1 MHz Thermal resistance Rth(j-a) — 450 — °C/W Polyimide board *1 Note: Polyimide board
0.8
3.0
Unit: mm
1.5
1.5
2.0
20h×15w×0.8t
HRB0502A
266
Main Characteristics
10
0 0.2 0.4 0.6 0.8 1.0
1.0
Pulse test
0 5 10 15 20 25
Pulse test
10
1.0
100
1.0 4010
10–3
10–2
10–4
10–1
Ta = 25°C
Ta = 75°C
Ta = 25°C
Ta = 75°C
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
10–3
10–5
10–2
10–4
10–6
Re
ve
rse
cu
rre
nt I R
(
A)
10–1
f = 1MHz
Pulse test
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Ca
pa
cita
nce
C
(
pF
)
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I F
(
A)
HRB0502A
267
0.2
0.1
0.3
0.4
1.0
0.5
1.5
2.5
2.0
0.2
0.1
0.3
0.4
0
00
00 10 205 15 25
Re
ve
rse
po
we
r d
issip
atio
n
Pd
(W
)
Sin wave
0 50 10025 75 125–25
D=1/6
0.2 0.40.3 0.5
D=1/6
D=1/3
DC
D=1/2
0.1
D=1/2
D=2/3
Sin wave
D=5/6
D=1/2
D=1/3
Sin wave
0.5
0.6
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Ave
rag
e r
ectifie
d c
urr
en
t
I O
(A
)
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
VR = 3V
Tj = 125°C
Rth(j-a) = 450°C/W
Fig.4 Forward power dissipation vs. Forward current
Forward current IF (A)
Fo
rwa
rd p
ow
er
dis
sip
atio
n
Pd
(
W)
tp
T
0Io
D = tp
T
Ta = 25°C
tp
T
VR
D =tp
T
0
Tj =125°C
DC
tp
T
0Io
D = —T
tp
268
RKR0202AQE Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
E9
RKR0202AQEP
Package Name : CMPAK
Package Code: PTSP0003ZB-A
Taping Abbreviation (Quantity)
P(3,000 pcs / reel)
(Top view)
2 1
3
(Top view)
2 1
3
1. Anode
2. Anode
3. Cathode
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRMM 20 V Average rectified current IO *1 *2 200 mA Non-Repetitive peak forward surge current IFSM *3 2 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Two device total 2. See from Fig.4 to Fig.6 3. 10ms sine wave 1 pulse
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.30 V IF = 10 mA Forward voltage VF2 — — 0.40 V IF = 100 mA
Reverse current IR — — 50 μA VR = 20 V Thermal resistance Rth(j-a) — 550 — °C/W Polyimide board *2 Notes: 1. Per one device 2. Polyimide board
0.8
3.0
Unit: mm
1.5
1.5
2.0
20h×15w×0.8t
RKR0202AQE
269
Main Characteristics
10–3
10–5
10–4
10–6
Revers
e c
urr
ent I R
(
A)
Forw
ard
curr
ent I F
(
A)
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Fig3. Capacitance vs. Reverse oltage
Reverse voltage VR (V)
Forw
ard
pow
er
dis
sip
ation P
d (
W)
1.0
0 0.2 0.4 0.60.1 0.50.3
10–5
10–4
10–3
10–7
10–6
10–2
10–1
Pulse test
10
100
1.0 100100.1
0 5 10 15 20 25
Pulse test
f = 1MHz
Pulse test
RKR0202AQE
270
0.04
0.02
0.06
0.08
00
00 10 205 15 25
t
T
0V
Tj = 125°C
D = —T
t
Fig5. Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Re
ve
rse
po
we
r d
issip
atio
n P
d (
W)
0.04
0.02
0.06
0.08
00 50 10025 75 125-25
0.10
0.12
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
Ave
rag
e r
ectifie
d c
urr
en
t I O
(
A)
Forward current IF (A)
Fig4. Forward power dissipation vs. Forward current
Fo
rwa
rd p
ow
er
dis
sip
atio
n P
d (
W)
Sin
DC
D=1/6
D=1/3
D=1/2 0.1
0.05
0.15
0.2
D=1/2
D=2/3
Sin
D=5/6
D=1/2
Sin(θ=180°)DC
D=1/3
D=1/6
t
T
0A
Ta = 25°C
D = —T
t
0.05 0.1 0.15
VR=10V
Tj =125°C
Rth(j-a)=550°C/W
Per one device
271
HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching
Features • Can be used for protection of signal-bus lines.
Ordering Information and Pin Arrangement
(Top View) (Top View)
21
34
1. Anode
2. Anode
3. Cathode
4. Cathode
E4
21
34HSB0104YPTR, HSB0104YPTL
Package Name : CMPAK- 4
Package Code: PTSP0004ZB-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
Absolute Maximum Ratings *1 (Ta = 25°C)
Item Symbol Value Unit Reverse peak reverse voltage VRRM 40 V Forward current IF 100 mA Non-Repetitive peak forward surge current IFSM *2 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Per one device. 2. 10ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.58 V IF = 100 mA Reverse current IR — — 50 µA VR = 40 V Capacitance C — 20 — pF VR = 0 V, f = 1 MHz
HSB0104YP
272
Main Characteristics
0
1.0
10
100
10
100
10
1.01.0 40
f=1MHz
0 0.2 0.4 0.6 0.8 1.0
1.0
10 20 30 40 50
Pulse testPulse test
10–1
10–3
10–5
10–2
10–4
10–6
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I F
(
A)
10–1
10–2
Re
ve
rse
cu
rre
nt I R
(
Am
)Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Ca
pa
cita
nce
C
(
pF
)
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
273
HRC0103A Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1 2S1
Cathode mark
Mark
1. Cathode
2. Anode
Package Code: PWSF0002ZA-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : UFP
HRC0103ATRF, HRC0103AKRF
TRF (4,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM *1 30 V Average rectified current IO *1 100 mA Non-Repetitive peak forward surge current IFSM *2 3 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — ⎯ 0.44 V IF = 100 mA Reverse current IR — ⎯ 50 μA VR = 30 V Thermal resistance Rth(j-a) — 500 ⎯ °C/W Polyimide board *1 Notes: 1. Polyimide board
Unit: mm
3.0
0.8
1.5
20h×15w×0.8t
1.5
2. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,
the solderability of the lead tip has been ignored. Please test and confirm before use.
HRC0103A
274
Main Characteristics
0 10 20 30 40 500 0.2 0.4 0.6 0.8 1.0
0
0.1
0.4
0.3
0.2
0 3020 40
0.5
Pulse test
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
10–3
10–2
10–5
10–4
1.0
10–6
10–1
10–2
10–7
10–4
10–3
10–6
10–5
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fo
rwa
rd c
urr
en
t I F
(
A) Ta = 75°C
Ta = 25°C
Pulse test
Ta = 75°C
Ta = 25°C
t
T
0V
Tj = 125°C
D=2/3
D=5/6
10
0.6
0.120.080
Revers
e p
ow
er
dis
sip
ation
Pd
(W
)
Fig4. Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Forw
ard
pow
er
dis
sip
ation
Pd
(W
)
DC
0.020
0.02
0.06
0.10
D=1/6
0.04
0.08
D=1/2
D = —T
t
D=1/2
sin(θ=180°)
Fig3. Forward power dissipation vs. Forward current
Forward current IF (A)
t
T
0A
Ta = 25°C
D = —T
t
0.04 0.06 0.10
sin(θ=180°)D=1/3
HRC0103A
275
0 50 10025 75 1250
0.08
0.04
0.12
0.10
0.06
0.02
Ave
rag
e r
ectifie
d c
urr
en
t
I O
(A
)
Ambient temperature Ta (°C)
Fig.5 Average rectified current vs. Ambient temperature
D=1/2
VR=VRRM/2
Tj =125°C
Rth(j-a)=500°C/W
D=1/6
D=1/3
DC
-25
sin(θ=180°)
276
HRC0103C Silicon Schottky Barrier Diode for Rectifying
Features • Low reverse voltage drop and suitable for high efficiency reverse current.
Ordering Information and Pin Arrangement
1 2S9
Cathode mark
Mark
1. Cathode
2. Anode
Package Code: PWSF0002ZA-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : UFP
HRC0103CTRF, HRC0103CKRF
TRF (4,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM *1 30 V Reverse voltage VR 30 V Average rectified current IO *1 100 mA Peak forward surge current IFM 300 mA Non-Repetitive peak forward surge current IFSM *2 1 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.40 V IF = 10 mA Forward voltage VF2 — — 0.60 V IF = 100 mA IR1 — — 0.1 VR = 5 V Reverse current IR2 — — 0.2
μA VR = 10 V
Capacitance C — — 8.0 pF VR = 0.5 V, f = 1 MHz Thermal resistance Rth(j-a) — 550 — °C/W Polyimide board *1 Notes: 1. Polyimide board
Unit: mm
3.0
0.8
1.5
20h×15w×0.8t
1.5
2. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,
the solderability of the lead tip has been ignored. Please test and confirm before use.
HRC0103C
277
Main Characteristics
0 10 20 30 40 500 0.2 0.4 0.6 0.8 1.0
0
0.005
0.02
0.015
0.01
0 3020 40
0.025
Pulse test
10–3
10–2
10–5
10–4
1.0
10–6
10–1
10–3
10–8
10–5
10–4
10–7
10–6
Re
ve
rse
cu
rre
nt I R
(
A)
Fo
rwa
rd c
urr
en
t I F
(
A)
Ta = 75°C
Ta = 25°C
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Pulse test
Ta = 75°C
Ta = 25°C
Ta = 50°C
t
T
0V
Tj = 125°C
sin
10
0.03
0.150.100
Revers
e p
ow
er
dis
sip
ation
Pd
(W
)
Fig4. Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Fig3. Forward power dissipation vs. Forward current
Forward current IF (A)
Forw
ard
pow
er
dis
sip
ation P
d (
W)
DC
0.050
0.02
0.08
0.12
t
T
0A
Ta = 25°C
0.04
0.06
0.1
D = —T
t
sinD = —
T
t
D = 2/3
D = 5/6
D = 1/6
D = 1/3
D = 1/2
D = 1/2
HRC0103C
278
0 50 10025 75 1250
0.08
0.04
0.12
0.1
0.06
0.02
Ave
rag
e r
ectifie
d c
urr
en
t
I O
(A
)
Ambient temperature Ta (°C)
Fig.5 Average rectified current vs. Ambient temperature
D = 1/2
D = 1/6
D = 1/3
DC
−25
sin(θ = 180°)
VR = VRM/2
Tj =125°C
Rth(j-a) = 550°C/W
279
HRC0201A Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1 2C3
Cathode mark
Mark
1. Cathode
2. Anode
Package Code: PWSF0002ZA-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : UFP
HRC0201ATRF, HRC0201AKRF
TRF (4,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM *1 15 V Reverse voltage VR 15 V Average rectified current IO *1 200 mA Peak forward current IFM 300 mA Non-Repetitive peak forward surge current IFSM *1 1 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.4 to Fig.6, with polyimide board. 2. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.39 V IF = 200 mA Reverse current IR — — 50 μA VR = 6 V Capacitance C — 18 — pF VR = 1 V, f = 1 MHz Thermal resistance Rth(j-a) — 600 — °C/W Polyimide board *1 Notes: 1. Polyimide board
Unit: mm
3.0
0.8
1.5
20h×15w×0.8t
1.5
2. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,
the solderability of the lead tip has been ignored. Please test and confirm before use.
HRC0201A
280
Main Characteristics
0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20
1.0
10–3
10–2
10–1
10–6
10–5
10–4
10–1
10–4
10–3
10–2
10–6
10–5
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltageFig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Forw
ard
curr
ent I F
(
A)
Revers
e c
urr
ent I R
(
A)
1001.00.1
Capacitance C
(
pF
)
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
1.0
100
10
10
f = 1MHzPulse test
0.6
Ta = 75°C
Ta = 25°C
Pulse test
Ta = 75°C
Ta = 25°C
Pulse test
HRC0201A
281
0 50 10025 75 1250
0.20
0.10
0.30
0.25
0.15
0.05Ave
rag
e r
ectifie
d c
urr
en
t
I O
(A
)
–25
1.0
0.8
0.6
0.4
0.2
30201000
1.2
0.250.200.150
0.100.050
0.05
0.10
0.15
D=1/6
D=1/3
DC
sin(θ=180°)
D=1/2
D=5/6
D=2/3
Fo
rwa
rd p
ow
er
dis
sip
atio
n
Pd
(
W)
Re
ve
rse
po
we
r d
issip
atio
n
Pd
(
W)t
T
0A
D = —T
t
Ta= 25°C
t
T
0V
D = —T
t
Tj = 125°C
Reverse voltage VR (V)
Fig.5 Reverse power dissipation vs. Reverse voltage Fig.4 Forward power dissipation vs. Forward current
Forward current IF (A)
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
sin(θ=180°)
1.4
0.30 5 15 25
D=1/2
DC
VR = VRRM/3Tj = 125°CRth(j-a) = 600°C/W
D=1/6
D=1/2
sin(θ=180°)
D=1/3
282
HRC0203B Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1 2S2
Cathode mark
Mark
1. Cathode
2. Anode
Package Code: PWSF0002ZA-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : UFP
HRC0203BTRF, HRC0203BKRF
TRF (4,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM *1 30 V Average rectified current IO *1 200 mA Non-Repetitive peak forward surge current IFSM *2 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.52 V IF = 200 mA Reverse current IR — — 10 μA VR = 30 V Thermal resistance Rth(j-a) — 500 — °C/W Polyimide board *1 Notes: 1. Polyimide board
Unit: mm
3.0
0.8
1.5
20h×15w×0.8t
1.5
2. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HRC0203B
283
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50
0.5
0.4
0.3
0.2
0.1
403020100
0
0.6
Pulse test
0.250.200.150
0.100.050
0.05
0.10
0.15
0.20
0.25
0.30
10–3
10–2
10–5
10–4
1.0
10–6
10–1
Pulse test
Ta = 75°C
Ta = 25°C
10–3
10–5
10–4
10–7
10–6
10–2
Ta = 75°C
Ta = 25°C
t
T
0V
Tj = 125°C
D = —T
t
Re
ve
rse
po
we
r d
issip
atio
n
Pd
(
W)
Fig4. Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Fig3. Forward power dissipation vs. Forward current
Forward current IF (A)
Fo
rwa
rd p
ow
er
dis
sip
atio
n P
d (
W) t
T
0A
Ta = 25°C
D = —T
t
D=1/6
D=1/3
sin(θ=180°)
DC
D=1/2
D=5/6
D=2/3
D=1/2
sin(θ=180°)
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I F
(
A)
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
HRC0203B
284
75 10025 500 125
0.25
0.20
0.15
0.10
0
0.05
DC
Avera
ge r
ectified c
urr
ent I O
(
A)
Ambient temperature Ta (°C)
Fig.5 Average rectified current vs. Ambient temperature
VR=VRRM/2
Tj =125°C
Rth(j-a)=500°C/W
sin(θ=180°)
D=1/3
D=1/6
D=1/2
-25-50
285
HRC0203C Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1 2S8
Cathode mark
Mark
1. Cathode
2. Anode
Package Code: PWSF0002ZA-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : UFP
HRC0203CTRF, HRC0203CKRF
TRF (4,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM *1 30 V Average rectified current IO *1 200 mA Non-Repetitive peak forward surge current IFSM *2 2 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.3 to Fig.5, with polyimide board. 2. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.25 IF = 5 mA Forward voltage VF2 — — 0.45
V IF = 200 mA
Reverse current IR — — 30 µA VR = 10 V Thermal resistance Rth(j-a) — 550 — °C/W Polyimide board *1 Note: 1. Polyimide board
Unit: mm
3.0
0.8
1.5
20h×15w×0.8t
1.5
2. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,
the solderability of the lead tip has been ignored. Please test and confirm before use.
HRC0203C
286
Main Characteristics
0.5
0.4
0.3
0.2
0.1
403020100
0
0.6
0.250.200.150
0.100.050
0.05
0.10
0.15
0.20
0.25
0.30
0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50
1.0
Ta = 75°C
Ta = 25°C
D=1/6
D=1/3
DC
sin(θ=180°)
D=1/2sin(θ=180°)
D=5/6
D=2/3
D=1/2
Ta = –25°C
Ta = 75°C
Ta = 25°C
Ta = –25°C
10–3
10–2
10–1
10–6
10–5
10–4
10–3
10–6
10–5
10–4
10–8
10–7
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
Fig4. Reverse power dissipation vs. Reverse voltage
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fig3. Forward power dissipation vs. Forward current
Forward current IF (A)
Fo
rwa
rd c
urr
en
t I F
(
A)
Fo
rwa
rd p
ow
er
dis
sip
atio
n P
d (
W)
Re
ve
rse
po
we
r d
issip
atio
n P
d (
W)
Re
ve
rse
cu
rre
nt I R
(
A)
t
T
0A
D = —T
t
Ta = 25°C
t
T
0V
D = —T
t
Tj = 125°C
Pulse test Pulse test
HRC0203C
287
1.0
10
101.00.1
100
f = 1MHzPulse test
0 15050 10025 75 1250
0.20
0.10
0.30
0.25
0.15
0.05
Ambient temperature Ta (°C)
Avera
ge r
ectified c
urr
ent I O
(
A)
Capacitance C
(
pF
)
Fig.5 Average rectified current vs. Ambient temperature
–25
Reverse voltage VR (V)
Fig.6 Capacitance vs. Reverse voltage
sin(θ=180°)D=1/6
D=1/3
D=1/2
DC
VR = VRRM/3Tj = 125°CRth(j-a) = 550°C/W
288
RKR0303AKJ Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1 2C6
Cathode mark
Mark
1. Cathode
2. Anode
Package Code: PWSF0002ZA-A
Taping Abbreviation (Quantity)
R (8,000 pcs / reel)
Package Name : UFP
RKR0303AKJP, RKR0303AKJR
P (4,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Reverse voltage VR 30 V forward current IF *1 0.3 A Non-Repetitive peak forward surge current IFSM *2 1 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.4 to Fig.6. 2. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.42 V IF = 300 mA Reverse current IR — — 200 μA VR = 30 V Thermal resistance Rth(j-a) — 600 — °C/W Polyimide board *1 Note: 1. Polyimide board
Unit: mm
3.0
0.8
1.5
20h×15w×0.8t
1.5
2. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,
the solderability of the lead tip has been ignored. Please test and confirm before use.
RKR0303AKJ
289
Main Characteristics
Re
ve
rse
cu
rre
nt
I R
(
A)
Fo
rwa
rd c
urr
en
t
I F
(A
)
Forward voltage VF (V) Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
1001.00.11.0
100
10
10
Ca
pa
cita
nce
C
(pF
)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
f = 1MHz
Pulse test
0 0.1 0.2 0.3 0.4 0.5
10–3
10–2
10–1
10–6
10–5
10–4
1.0
0.6
Pulse test
0
10–2
10–1
10–5
10–4
10–3
10–6
10 20 305 15 25
Ta = 75°C
Ta = 25°C
Ta = 25°C
Ta = 75°C
Pulse test
Fig.1 Forward current vs. Forward voltage
Ta = 75°C
RKR0303AKJ
290
Re
ve
rse
po
we
r d
issip
atio
n
Pd
(
W)
Ave
rag
e r
ectifie
d c
urr
en
t
I O
(A
)F
orw
ard
po
we
r d
issip
atio
n
Pd
(
W)
0.3 0.40.20
Fig.4 Forward power dissipation vs. Forward current
Forward current IF (A)
0.1
DC
D=1/2
0
0.05
0.1
0.15
D=1/6
t
T
0A
D = —T
t
Ta = 25°C
0.2
0.25
SinD=1/3
0 50 10025 75 1250
0.20
0.10
0.30
0.25
0.15
0.05
–25
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
DC
sin(θ=180°)
D=1/6
D=1/3
D=1/2
0.35
10
1.2
0.8
2000
0.2
t
T
0V
D = —T
t
Tj = 125°C
D=5/6
D=2/3
D=1/2
sin
4030
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
0.4
0.6
1.0
VR = VRRM/3Tj = 125°CRth(j-a) = 600°C/W
291
RKR0303BKJ Silicon Schottky Barrier Diode for Rectifying
Features • Low reverse current drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1 2C7
Cathode mark
Mark
1. Cathode
2. Anode
Package Code: PWSF0002ZA-A
Taping Abbreviation (Quantity)
R (8,000 pcs / reel)
Package Name : UFP
RKR0303BKJP, RKR0303BKJR
P (4,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Reverse voltage VR 30 V forward current IF *1 0.3 A Non-Repetitive peak forward surge current IFSM *2 1 A Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. See from Fig.4 to Fig.6. 2. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.50 V IF = 300 mA Reverse current IR — — 50 µA VR = 30 V Thermal resistance Rth(j-a) — 600 — °C/W Polyimide board *1 Note: 1. Polyimide board
Unit: mm
3.0
0.8
1.5
20h×15w×0.8t
1.5
2. In the UFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,
the solderability of the lead tip has been ignored. Please test and confirm before use.
RKR0303BKJ
292
Main Characteristics
Re
ve
rse
cu
rre
nt
I R
(
A)
Fo
rwa
rd c
urr
en
t
I F
(A
)
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
1001.00.11.0
100
10
10
Ca
pa
cita
nce
C
(pF
)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
f = 1MHz
Pulse test
0 0.1 0.2 0.3 0.4 0.5
10–3
10–2
10–1
10–6
10–5
10–4
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
1.0
0.610–8
10–7
0.7 0.8
Pulse test
0
10–4
10–3
10–7
10–6
10–5
10–8
10 20 305 15 25
Ta = 75°C
Ta = 25°C
Pulse test
Ta = 75°C
Ta = 25°C
RKR0303BKJ
293
Ave
rag
e r
ectifie
d c
urr
en
t
I O
(A
)
0.3 0.40.20
Fo
rwa
rd p
ow
er
dis
sip
atio
n
Pd
(
W)
Fig.4 Forward power dissipation vs. Forward current
Forward current IF (A)
0.1
DC
D=1/2
0
0.05
0.1
0.15
D=1/6
t
T
0A
D = —T
t
Ta = 25°C
Sin
0.2
0.25
D=1/3
10
0.7
0.8
0.6
0.4
2000
0.1
t
T
0V
D = —T
t
Tj = 150°C
D=5/6
D=2/3
D=1/2
sin
4030
Re
ve
rse
po
we
r d
issip
atio
n
Pd
(
W)
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
0.2
0.3
0.5
0 50 10025 75 1250
0.2
0.1
0.3
0.25
0.15
0.05
–25
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
DC
VR = VRRM/2Tj = 150°CRth(j-a) = 600°C/W
sin(θ=180°)D=1/6
D=1/3
D=1/2
0.35
150
294
HRD0103C, HRU0103C Silicon Schottky Barrier Diode for Rectifying
Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Lineup of environmental friendly Halogen free type (HRD0103C-N)
Ordering Information and Pin Arrangement
Package Name : SFP
Package Code: PUSF0002ZB-A
1 2
HRU0103CTRF
Package Name : URP
Package Code : PTSP0002ZA-A
1. Cathode
2. Anode
Cathode mark
Mark Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)1 2S8
Cathode mark
Mark
1. Cathode
2. Anode
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
HRD0103CKRF
HRD0103C-NKRF(Halogen-free type)
S6
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM *1 30 V Reverse voltage VR 30 V Average rectified current IO *1 100 mA Peak forward surge current IFM 300 mA Non-Repetitive peak forward surge current IFSM *2 1 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.40 V IF = 10 mA Forward voltage VF2 — — 0.60 V IF = 100 mA IR1 — — 0.1 VR = 5 V Reverse current IR2 — — 0.2
µA VR = 10 V
Capacitance C — — 8.0 pF VR = 0.5 V, f = 1 MHz Thermal resistance Rth(j-a) — 600 — °C/W Polyimide board *1 Notes: 1. Polyimide board
Unit: mm
3.0
0.8
1.5
20h×15w×0.8t
1.5
2. In the SFP package, some lead is exposed because the tip of the llead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HRD0103C, HRU0103C
295
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0
0
0.005
0.020
0.015
0.01
0 3020 40
0.025
Pulse test
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
10–3
10–2
10–5
10–4
1.0
10–6
10–1
10–3
10–8
10–5
10–4
10–7
10–6
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fo
rwa
rd c
urr
en
t I F
(
A)
Ta = 75°C
Ta = 25°C
Pulse test
10
0.03
0.150.100
Revers
e p
ow
er
dis
sip
ation
Pd
(W
)
Fig4. Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Fig3. Forward power dissipation vs. Forward current
Forward current IF (A)
Forw
ard
pow
er
dis
sip
ation
Pd
(W
)
0.050
0.02
0.08
0.12
0.04
0.06
0.1
0 5 15 25 3010 20
Ta = 25°C
Ta = 50°C
Ta = 75°C
t
T
0V
Tj = 125°C
sin
D = —T
t
D = 2/3
D = 5/6
D = 1/2DC
sinD = 1/6
D = 1/3
D = 1/2
t
T
0A
Ta = 25°C
D = —T
t
HRD0103C, HRU0103C
296
0 50 10025 75 1250
Ave
rag
e r
ectifie
d c
urr
en
t
I O
(A
)
Ambient temperature Ta (°C)
Fig.5 Average rectified current vs. Ambient temperature
−25
0.12
0.1
0.08
0.06
0.04
0.02
D = 1/6
DC
D = 1/2
D = 1/3
sin(θ = 180°)
VR = VRM/2
Tj =125°C
Rth(j-a) = 600°C/W
297
HRD0203C Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1 2S5
Cathode mark
Mark
1. Cathode
2. Anode
HRD0203CKRF
Package Name : SFP
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM *1 30 V Average rectified current IO *1 200 mA Non-Repetitive peak forward surge current IFSM *2 2 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.3 to Fig.5, with polyimide board. 2. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.25 IF = 5 mA Forward voltage VF2 — — 0.45
V IF = 200 mA
Reverse current IR — — 30 µA VR = 10 V Thermal resistance Rth(j-a) — 600 — °C/W Polyimide board *1 Note: 1. Polyimide board
Unit: mm
3.0
0.8
1.5
20h×15w×0.8t
1.5
HRD0203C
298
Main Characteristics
0.5
0.4
0.3
0.2
0.1
403020100
0
0.6
0.250.200.150
0.100.050
0.05
0.10
0.15
0.20
0.25
0.30
0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50
1.0
Ta = 75°C
Ta = 25°C
D=1/6
D=1/3
DC
sin(θ=180°)
D=1/2sin(θ=180°)
D=5/6
D=2/3
D=1/2
Ta = –25°C
Ta = 75°C
Ta = 25°C
Ta = –25°C
10–3
10–2
10–1
10–6
10–5
10–4
10–3
10–6
10–5
10–4
10–8
10–7
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
Fig4. Reverse power dissipation vs. Reverse voltage
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Fig3. Forward power dissipation vs. Forward current
Forward current IF (A)
Fo
rwa
rd c
urr
en
t I F
(
A)
Fo
rwa
rd p
ow
er
dis
sip
atio
n P
d (
W)
Re
ve
rse
po
we
r d
issip
atio
n P
d (
W)
Re
ve
rse
cu
rre
nt I R
(
A)
t
T
0A
D = —T
t
Tj = 25°C
t
T
0V
D = —T
t
Tj = 125°C
Pulse test Pulse test
HRD0203C
299
1.0
10
101.00.1
100
f = 1MHzPulse test
0 15050 10025 75 1250
0.20
0.10
0.30
0.25
0.15
0.05
Ambient temperature Ta (°C)
Avera
ge r
ectified c
urr
ent I O
(
A)
Capacitance C
(
pF
)
Fig.5 Average rectified current vs. Ambient temperature
25
Reverse voltage VR (V)
Fig.6 Capacitance vs. Reverse voltage
sin(θ=180°)D=1/6
D=1/3
D=1/2
DC
VR = VRRM/3Tj = 125°CRth(j-a) = 600°C/W
300
HRL0103C Silicon Schottky Barrier Diode for Rectifying
Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Lineup of environmental friendly Halogen free type (HRL0103C-N)
Ordering Information and Pin Arrangement
1 2P
Cathode mark
Mark
1. Cathode
2. Anode
Package Code: PXSF0002ZA-A
Taping Abbreviation (Quantity)
KRF (10,000 pcs / reel)
Package Name : EFP
HRL0103CKRF
HRL0103C-NKRF(Halogen-free type)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Peak reverse voltage VRM *1 30 V Reverse voltage VR 30 V Average rectified current IO *1 100 mA Peak forward surge current IFM 300 mA Non-Repetitive peak forward surge current IFSM *2 1 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.40 V IF = 10 mA Forward voltage VF2 — — 0.60 V IF = 100 mA IR1 — — 0.1 VR = 5 V Reverse current IR2 — — 0.2
μA VR = 10 V
Capacitance C — — 8.0 pF VR = 0.5 V, f = 1 MHz Thermal resistance Rth(j-a) — 800 — °C/W Polyimide board *1 Notes: 1. Polyimide board
Unit: mm
3.0
0.5
1.0
20h×15w×0.8t
0.3
2. For EFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip
part is considered as unquestioned. Please kindly consider soldering nature.
HRL0103C
301
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0
0
0.005
0.020
0.015
0.010
0 3020 40
0.025
Pulse test
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
10–3
10–2
10–5
10–4
1.0
10–6
10–1
10–3
10–8
10–5
10–4
10–7
10–6
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fo
rwa
rd c
urr
en
t I F
(
A)
Ta = 75°C
Ta = 25°C
Pulse test
t
T
0V
Tj = 125°CD=1/3
D=5/6
sin(θ=180°)
10
0.030
0.150.100
Revers
e p
ow
er
dis
sip
ation
Pd
(W
)
Fig4. Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Fig3. Forward power dissipation vs. Forward current
Forward current IF (A)
Forw
ard
pow
er
dis
sip
ation
Pd
(W
)
DC
0.050
0.02
0.08
0.12
D=1/6
D=1/3
t
T
0A
Tj = 25°C
0.04
0.06
0.10
D=1/2
D = —T
tsin(θ=180°) D = —
T
t
D=1/2
0 5 15 25 3010 20
Ta = 25°C
Ta = 50°C
Ta = 75°C
HRL0103C
302
0 50 10025 75 1250
80
40
120
100
60
20Ave
rag
e r
ectifie
d c
urr
en
t
I O
(m
A)
Ambient temperature Ta (°C)
Fig.5 Average rectified current vs. Ambient temperature
D=1/2
VR=VRRM/2
Tj =125°C
Rth(j−a)=800°C/W
D=1/6
D=1/3
DC
−25
sin(θ=180°)
303
HRW0202A Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1. Anode
2. Anode
3. Cathode(Top View)
2 1
3HRW0202ATR, HRW0202ATL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)2 1
S17
(Top view)
3
Absolute Maximum Ratings *1 (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRMM *1 20 V Average rectified current IO *2 200 mA Non-Repetitive peak forward surge current IFSM *3 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Two device total. 2. See from Fig.4 to Fig.7 3. 10ms sine wave 1 pulse.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.40 V IF = 100 mA Reverse current IR — — 50 μA VR = 20 V Thermal resistance Rth(j-a) — 350 — °C/W Polyimide board *1 Notes: 1. Per one device 2. Polyimide board
0.8
3.0
Unit: mm1.5
1.5
1.5
20h×15w×0.8t
HRW0202A
304
Main Characteristics
0 0.2 0.4 0.60.1 0.50.3
Ta = 75°C
Ta = 25°C
Pulse test
0 5 10 15 20 25
Pulse test
10
1.0
100
1.0 4010
f = 1MHz
Pulse test
10–3
10–2
10–5
10–4
1.0
10–6
10–1
Ta = 75°C
Ta = 25°C
10–3
10–8
10–5
10–4
10–7
10–6
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I F
(
A)
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fig3. Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
HRW0202A
305
0.04
0.02
0.06
0.08
0.10
0.05
0.15
0.25
0.20
00
00 10 205 15 250.04 0.080.06 0.10.02
DCDC
t
T
0A
Ta= 25°C
D = —T
t
D=1/6
DC
D=1/3
D=1/2
sin(θ=180°)
t
T
0V
Tj = 125°C
D = —T
t
Fig5. Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Re
ve
rse
po
we
r d
issip
atio
n P
d (
W)
D=2/3
D=1/2
sin(θ=180°)
D=5/6
D=1/3
D=1/2
D=1/6
sin(θ=180°)
VR=VRRM/2
Tj =125°C
Rth(j-a)=350°C/W
Two device total
D=1/3
D=1/2
sin(θ=180°)
D=1/6
VR=VRRM/2
Tj =125°C
Rth(j-a)=350°C/W
Per one device
0.04
0.02
0.06
0.08
00 50 10025 75 125-25
0.10
0.12
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
Ave
rag
e r
ectifie
d c
urr
en
t I O
(
A)
0.10
0.05
0.15
0.25
0.20
00 50 10025 75 125
Ave
rag
e r
ectifie
d c
urr
en
t I O
(
A)
Ambient temperature Ta (°C)
Fig.7 Average rectified current vs. Ambient temperature
-25
Forward current IF (A)
Fig4. Forward power dissipation vs. Forward current
Fo
rwa
rd p
ow
er
dis
sip
atio
n P
d (
W)
306
HRW0202B Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1. Anode
2. Anode
3. Cathode(Top View)
2 1
3HRW0202BTR, HRW0202BTL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)2 1
S18
(Top view)
3
Absolute Maximum Ratings *1 (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRMM *2 20 V Average rectified current IO *2 200 mA Non-Repetitive peak forward surge current IFSM *3 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Two device total. 2. See from Fig.4 to Fig.7 3. 10ms sine wave 1 pulse.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.42 V IF = 100 mA Reverse current IR — — 10 μA VR = 20 V Thermal resistance Rth(j-a) — 400 — °C/W Polyimide board *1 Notes: 1. Per one device 2. Polyimide board
0.8
3.0
Unit: mm1.5
1.5
1.5
20h×15w×0.8t
HRW0202B
307
Main Characteristics
0 0.2 0.4 0.60.1 0.50.3
Ta = 75°C
Ta = 25°C
Pulse test
0 5 10 15 20 25
Pulse test
10
1.0
100
1.0 4010
f = 1MHz
Pulse test
10–3
10–2
10–5
10–4
1.0
10–6
10–1
Ta = 75°C
Ta = 25°C
10–3
10–8
10–5
10–4
10–7
10–6
Fig3. Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I F
(
A)
HRW0202B
308
0.10
0.05
0.15
0.25
0.20
0.02
0.01
0.03
0.06
0.04
0.04
0.02
0.06
0.08
0
00 10 205 15 25
0 50 10025 75 125-25 0 50 10025 75 125-25
VR=VRRM/2
Tj =125°C
Rth(j-a)=400°C/W
Per one device
0.10
0.12
0
VR=VRRM/2
Tj =125°C
Rth(j-a)=400°C/W
Two device total
0 0.04 0.080.02 0.06 0.10
0.02
0.04
0.08F
orw
ard
po
we
r d
issip
atio
n P
d (
W)
Forward current IF (A)
Fig.4 Forward power dissipation vs. Forward current
t
T
0A
Ta = 25°C
D = —T
tt
T
0V
Tj = 125°C
D = —T
t
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Re
ve
rse
po
we
r d
issip
atio
n P
d (
W)
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
Ave
rag
e r
ectifie
d c
urr
en
t I O
(
A)
Ave
rag
e r
ectifie
d c
urr
en
t I O
(
A)
Ambient temperature Ta (°C)
Fig.7 Average rectified current vs. Ambient temperature
D=1/6
DC
D=1/3
D=1/2
sin(θ=180°)
DC
D=1/3
D=1/2
sin(θ=180°)
D=1/6
DC
D=1/3
D=1/2
D=1/6
sin(θ=180°)
0
D=2/3
D=1/2
sin(θ=180°)
D=5/6
0.06
0.05
309
HRW0203A Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
(Top View)
2 1
3HRW0203ATR, HRW0203ATL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)2 1
S5
(Top view)
3
1. NC
2. Anode
3. Cathode
Absolute Maximum Ratings *1 (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRMM *1 30 V Average rectified current IO *1 200 mA Non-Repetitive peak forward surge current IFSM *2 2 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.1 to Fig.5, with polyimide board. 2. 50 Hz sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.50 V IF = 200 mA Reverse current IR — — 50 μA VR = 30 V Capacitance C — 40 — pF VR = 0 V, f = 1 MHz
HRW0203A
310
Main Characteristics
0 0.2 0.4 0.6 0.8
1.0
10–4
10 1001.0
10–3
10–2
0
0.10
0.05
0.15
0 0.200.100.05 0.15
0.20
0
0.20
0.10
0.30
0 3010 205 15 25
0.40
10–2
10–1
10–3
Tj = 25°C
Re
ve
rse
cu
rre
nt I R
(
A)
t
T
0V
Tj = 125°CT
tD = — D=2/3
D=5/6
sin(q=180°)
D=1/2
t
T
0A
Ta = 25°CT
t D=1/6
D=1/3sin(q=180°)
DC
D=1/2
Tj = 125°C
D = —
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I F
(
A)
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Fig.3 Forward power dissipation vs. Forward current
Forward current IF (A)
Fo
rwa
rd p
ow
er
dis
sip
atio
n P
d (
W)
Re
ve
rse
po
we
r d
issip
atio
n P
d (
W)
Fig.4 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
HRW0203A
311
1.0
10
101.00.1
100
f=1MHz
Pulse test
0 15050 10025 75 125
t
T
0A
D = t
T
Unit: mm
20hx15wx0.8t
0.8
1.5
1.5
3.0
1.5
Rth=360°C/W
VR=VRRM/2, Tj =125°C
0
0.20
0.10
0.30
0.25
0.15
0.05A
ve
rag
e r
ectifie
d c
urr
en
t I O
(
A)
Ambient temperature Ta (°C)
Fig.5 Average rectified current vs. Ambient temperature
D=1/2
D=1/6
D=1/3DC
sin(q=180°)
Fig.6 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
312
HRW0203B Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1. Anode
2.NC
3. Cathode(Top View)
2 1
3HRW0203BTR, HRW0203BTL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)2 1
S21
(Top view)
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRMM *1 30 V Average rectified current IO *1 200 mA Non-Repetitive peak forward surge current IFSM *2 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.1 to Fig.5, with polyimide board 2. 50 Hz sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.5 V IF = 200 mA Reverse current IR — — 50 μA VR = 30 V Capacitance C — 40 — pF VR = 0 V, f = 1 MHz
HRW0203B
313
Main Characteristics
010–3
0.2 0.4 0.6 0.8
1.0
10–4
Revers
e c
urr
ent I R
(
A)
Tj = 25°C
10–2
10–1
10 1001.0
10–3
10–2
Tj = 125°C
0
0.10
0.05
0.15
0 0.200.100.05 0.15
0.20
0
0.20
0.10
0.30
0 3010 205 15 25
0.40
Fig.4 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Revers
e p
ow
er
dis
sip
ation P
d (
W)
Forward current IF (A)
Fig.3 Forward power dissipation vs. Forward current
Forw
ard
pow
er
dis
sip
ation P
d (
W)
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Forw
ard
curr
ent I F
(
A)
t
T
0A
Ta = 25°C
D = —T
tt
T
0V
Tj = 125°C
D = —T
t
D=5/6
D=2/3
D=1/2
sin(θ=180°)
D=1/6
D=1/3sin(θ=180°)
DC
D=1/2
HRW0203B
314
1.0
10
101.00.1
100
f=1MHz
Pulse test
0 15050 10025 75 1250
0.20
0.10
0.30
0.25
0.15
0.05
DCD=1/6
D=1/3
Ave
rag
e r
ectifie
d c
urr
en
t I O
(
A)
Ambient temperature Ta (°C)
Fig.5 Average rectified current vs. Ambient temperature
Unit: mm
20h´15w´0.8t
0.8
1.5
1.5
3.0
1.5
Rth=360°C/W
VR=VRRM/2, Tj=125°C
D=1/2
Reverse voltage VR (V)
Fig.6 Capacitance vs. Reverse voltage
Ca
pa
cita
nce
C
(
pF
)
t
T
0A
D = t
T
sin(θ=180°)
315
HRW0302A Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1.NC
2. Anode
3. Cathode(Top View)
2 1
3HRW0302ATR, HRW0302ATL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)2 1
S11
(Top view)
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRMM *1 20 V Average rectified current IO *1 300 mA Non-Repetitive peak forward surge current IFSM *2 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.4 to Fig.6. 2. 10ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.40 V IF = 300 mA Reverse current IR — — 100 μA VR = 20 V Capacitance C — — 100 pF VR = 0 V, f = 1 MHz Thermal resistance Rth(j-a) — 340 — °C/W Polyimide board *1 Note: 1. Polyimide board
0.8
3.0
Unit: mm1.5
1.5
1.5
20h×15w×0.8t
HRW0302A
316
Main Characteristics
0 5 10 15 20 250 0.2 0.4 0.6 0.8 1.0
Pulse test
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
10–2
10–1
10–4
10–3
10
10–5
1.0
10–1
10–6
10–3
10–2
10–5
10–4
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fo
rwa
rd c
urr
en
t I F
(
A) Ta = 75°C
Ta = 25°C
Pulse test
Ta = 75°C
Ta = 25°C
10
1.0
100
1.0 4010
f = 1MHz
Pulse test
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
HRW0302A
317
0
0.20
0.10
0.30
0.40
0
0.10
0.05
0.15
0
0.25
0
0.20
0.10
0.30
0 10 205 15 25
0.40
0 50 10025 75 125
0.300.10 0.200.15 0.25
0.20
0.05
t
T
0V
Tj = 125°C
D = —T
t
D=2/3
D=5/6
sin(θ=180°)
D=1/2
Revers
e p
ow
er
dis
sip
ation P
d (
W)
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
DC
D=1/6
D=1/3
D=1/2
sin(θ=180°)
Fig.4 Forward power dissipation vs. Forward current
Forward current IF (A)
Forw
ard
pow
er
dis
sip
ation P
d (
W)
t
T
0A
Ta = 25°C
D = —T
t
-25
Avera
ge r
ectified c
urr
ent I O
(
A)
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
D=1/6
D=1/3
sin(θ=180°)
D=1/2
DC
VR=VRRM/2
Tj =125°C
Rth(j-a)=340°C/W
318
HRW0502A Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1.NC
2. Anode
3. Cathode(Top View)
2 1
3HRW0502ATR, HRW0502ATL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)2 1
S10
(Top view)
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRMM *1 20 V Average rectified current IO *1 500 mA Non-Repetitive peak forward surge current IFSM *2 5 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.4 to Fig.6. 2. 10ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.40 V IF = 500 mA Reverse current IR — — 200 μA VR = 20 V Capacitance C — 120 — pF VR = 0 V, f = 1 MHz Thermal resistance Rth(j-a) — 340 — °C/W Polyimide board *1 Note: Polyimide board
0.8
3.0
Unit: mm1.5
1.5
1.5
20h×15w×0.8t
HRW0502A
319
Main Characteristics
10
0 0.2 0.4 0.6 0.8 1.0
1.0
Pulse test
0 5 10 15 20 25
Pulse test
10
1.0
100
1.0 4010
10–3
10–2
10–4
10–1
Ta = 25°C
Ta = 75°C
Ta = 25°C
Ta = 75°C
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
10–3
10–5
10–2
10–4
10–6
Re
ve
rse
cu
rre
nt I R
(
A)
10–1
f = 1MHz
Pulse test
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Ca
pa
cita
nce
C
(
pF
)
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I F
(
A)
HRW0502A
320
0.2
0.1
0.3
0.4
1.0
0.5
1.5
2.5
2.0
0.2
0.1
0.3
0.4
0
00 0 10 205 15 25
0 50 10025 75 125
0.2 0.40.3 0.50.1
0.5
0.6
t
T
0A
Ta = 25°C
D = —T
tt
T
0V
Tj = 125°C
D = —T
t
D=1/6
D=1/3sin(θ=180°)
DC
D=1/2
D=5/6
D=2/3
D=1/2
sin(θ=180°)
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
0
Re
ve
rse
po
we
r d
issip
atio
n P
d (
W)
D=1/6
sin(θ=180°)
D=1/2
D=1/3
DC
Ave
rag
e r
ectifie
d c
urr
en
t I O
(
A)
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
VR=VRRM/2
Tj =125°C
Rth(j-a)=340°C/W
-25
Fig.4 Forward power dissipation vs. Forward current
Forward current IF (A)
Fo
rwa
rd p
ow
er
dis
sip
atio
n P
d (
W)
321
HRW0503A Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1.NC
2. Anode
3. Cathode(Top View)
2 1
3HRW0503ATR, HRW0503ATL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)2 1
S6
(Top view)
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRMM *1 20 V Average rectified current IO *1 500 mA Non-Repetitive peak forward surge current IFSM *2 5 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.1 to Fig.5, with polyimide board. 2. 50 Hz sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.55 V IF = 500 mA Reverse current IR — — 50 μA VR = 30 V Capacitance C — 65 — pF VR = 0 V, f = 1 MHz
HRW0503A
322
Main Characteristics
0 0.2 0.4 0.6 0.8
1.0
0
0.20
0.10
0.30
0 0.50.20.1 0.3
0.40
0
0.20
0.10
0.30
0 3010 205 15 25
0.40
0 5 10 15 20 3025
0.4
t
T
0A
Ta = 25°C
D = —T
t
D=1/6
D=1/3sin(θ=180°)
DC
D=1/2
10–3
10–2
10–1
10–3
10–2
10–1
Tj = 125°C
t
T
0V
Tj = 125°C
D = —T
t
D=5/6
D=2/3
D=1/2
sin(θ=180°)
Tj = 25°C
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Forw
ard
curr
ent I F
(
A)
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Revers
e c
urr
ent I R
(
A)
Fig.3 Forward power dissipation vs. Forward current
Forward current IF (A)
Forw
ard
pow
er
dis
sip
ation P
d (
W)
Fig.4 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Revers
e p
ow
er
dis
sip
ation P
d (
W)
HRW0503A
323
1.0
10
100.1
100
f=1MHz
Pulse test
50 10025 75 1250
0.4
0.2
0.6
0.5
0.3
0.1
Unit: mm
20h×15w×0.8t
0.8
1.5
1.5
3.0
1.5
Rth=330°C/W
0
1.0
t
T
0A
D = t
T
VR=VRRM/2,
Tj =125°C
D=1/2
DC
sin(θ=180°)
D=1/6
D=1/3
Ambient temperature Ta (°C)
Fig.5 Average rectified current vs. Ambient temperature
Ave
rag
e r
ectifie
d c
urr
en
t I O
(
A)
-25
Fig.6 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ca
pa
cita
nce
C
(p
F)
324
HRW0702A Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1.NC
2. Anode
3. Cathode(Top View)
2 1
3HRW0702ATR, HRW0702ATL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)2 1
S15
(Top view)
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRMM *1 20 V Forward current IF *1 700 mA Non-Repetitive peak forward current IFM 1.4 A Non-Repetitive peak forward surge current IFSM *2 5 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.4 to Fig.6. 2. 10ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.43 V IF = 700 mA Reverse current IR — — 200 μA VR = 20 V Capacitance C — 120 — pF VR = 0 V, f = 1 MHz Thermal resistance Rth(j-a) — 340 — °C/W Polyimide board *1 Note: Polyimide board
0.8
3.0
Unit: mm1.5
1.5
1.5
20h×15w×0.8t
HRW0702A
325
Main Characteristics
10
0 0.2 0.4 0.6 0.8 1.0
1.0
Pulse test
0 5 10 15 20 25
Pulse test
10
1.0
100
1.0 4010
10–3
10–2
10–4
10–1
Ta = 25°C
Ta = 75°C
Ta = 25°C
Ta = 75°C
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
10–3
10–5
10–2
10–4
10–6
Re
ve
rse
cu
rre
nt I R
(
A)
10–1
f = 1MHz
Pulse test
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Ca
pa
cita
nce
C
(
pF
)
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I F
(
A)
HRW0702A
326
0.2
0.1
0.3
0.4
0.5
1.0
0.5
1.5
2.5
2.0
0
00 0 10 205 15 250.2 0.40.3 0.50.1
0.6
0.4
0.2
0.6
0.8
0 50 10025 75 125
0.6 0.7
D=1/6
D=1/3
sin(θ=180°)
DC
D=1/2
t
T
0A
Ta= 25°C
D = —T
t D=5/6
D=2/3
D=1/2
sin(θ=180°)
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Re
ve
rse
po
we
r d
issip
atio
n P
d (
W)
t
T
0V
Tj = 125°C
D = —T
t
0
-25
Ave
rag
e r
ectifie
d c
urr
en
t I O
(
A)
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
D=1/6
sin(θ=180°)
D=1/2
D=1/3
DC
VR=VRRM/2
Tj =125°C
Rth(j-a)=340°C/W
Fig.4 Forward power dissipation vs. Forward current
Forward current IF (A)
Fo
rwa
rd p
ow
er
dis
sip
atio
n P
d (
W)
327
HRW0703A Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1.NC
2. Anode
3. Cathode(Top View)
2 1
3HRW0703ATR, HRW0703ATL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)2 1
S8
(Top view)
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRMM *1 30 V Forward current IF *1 700 mA Non-Repetitive peak forward surge current IFSM *2 5 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.4 to Fig.7. 2. 50 Hz sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.5 V IF = 700 mA Reverse current IR — — 100 μA VR = 30 V Capacitance C — 150 — pF VR = 0 V, f = 1 MHz
Rth1(j-a) — 390 — °C/W Polyimide board *1 Thermal resistance Rth2(j-a) 290 — °C/W Ceramic board *2
Notes: 1. Polyimide board 2. Ceramic board
0.8
3.0
Unit: mm1.5
1.5
1.5
20h×15w×0.8t
4.2
Unit: mm2.0
2.0
20h×15w×0.65t
HRW0703A
328
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0
10
1.0
Pulse test
0 4010 3020 50
Pulse test
10
1.0
100
1.0 4010
10–2
10–1
Ta = 25°C
Ta = 75°C 10–3
10–5
10–2
10–4
10–6
10–1
Ta = 25°C
Ta = 75°C
f = 1MHz
Pulse test
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I F
(
A)
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Ca
pa
cita
nce
C
(
pF
)
HRW0703A
329
0
0.40
0.20
0.60
0.80
DC
0
0.40
0.20
0.60
0 1.00.40.2 0.6
0.80
0
0.8
0.4
1.2
0 3010 205 15 250.8
1.6
0 50 10025 75 125 0 50 10025 75 125
DC
t
T
0A
Ta = 25°C
D = —T
t
sin(θ=180°)
D=1/6
D=1/3
D=1/2
DC
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Re
ve
rse
po
we
r d
issip
atio
n P
d (
W)
t
T
0V
Tj = 125°C
D = —T
t
D=5/6
D=2/3
D=1/2
sin(θ=180°)
VR=VRRM/2
Tj =125°C
Ceramic board
D=1/2
D=1/3
sin(θ=180°)
D=1/6
-25
Ave
rag
e r
ectifie
d c
urr
en
t I O
(
A)
Ambient temperature Ta (°C)
Fig.7 Average rectified current vs. Ambient temperature
VR=VRRM/2
Tj =125°C
Polyimide board
D=1/2
D=1/3
-25
sin(θ=180°)
D=1/6
Fig.4 Forward power dissipation vs. Forward current
Forward current IF (A)
Fo
rwa
rd p
ow
er
dis
sip
atio
n P
d (
W)
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
Ave
rag
e r
ectifie
d c
urr
en
t I O
(
A)
0
0.40
0.20
0.60
0.80
330
HRU0103A Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
HRU0103ATRF
Package Name : URP
Package Code : PTSP0002ZA-A
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel) 1 2S1
Cathode mark
Mark
1. Cathode
2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM *1 30 V Average rectified current IO *1 100 mA Non-Repetitive peak forward surge current IFSM *2 3 V Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.44 V IF = 100 mA Reverse current IR — — 50 μA VR = 30 V Thermal resistance Rth(j-a) — 600 — °C/W Polyimide board *1 Note: 1. Polyimide board
Unit: mm
3.0
0.8
1.5
20h×15w×0.8t
1.5
HRU0103A
331
Main Characteristics
0 10 20 30 40 500 0.2 0.4 0.6 0.8 1.0
0
0.01
0.04
0.03
0.02
0 3020 40
0.05
Pulse test
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
10–3
10–2
10–5
10–4
1.0
10–6
10–1
10–2
10–7
10–4
10–3
10–6
10–5
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fo
rwa
rd c
urr
en
t I F
(
A) Ta = 75°C
Ta = 25°C
Pulse test
Ta = 75°C
Ta = 25°C
D=2/3
D=5/6
sin(θ=180°)
10
0.06
0.120.100
Re
ve
rse
po
we
r d
issip
atio
n
Pd
(
W)
Fig4. Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Fig3. Forward power dissipation vs. Forward current
Forward current IF (A)
Fo
rwa
rd p
ow
er
dis
sip
atio
n
Pd
(
W)
DC
0.080
0.02
0.08
D=1/3
0.04
0.06
0.10
D=1/2
D=1/2
D=1/6
sin(θ=180°)
0.060.040.02
t
T
0A
Ta = 25°C
D = —T
t
t
T
0V
Tj = 125°C
D = —T
t
HRU0103A
332
0 50 10025 75 125
0
0.08
0.04
0.12
0.10
0.06
0.02
Ave
rag
e r
ectifie
d c
urr
en
t
I O
(A
)
Ambient temperature Ta (°C)
Fig.5 Average rectified current vs. Ambient temperature
D=1/2
VR=VRRM/2
Tj =125°C
Rth(j-a)=600°C/W
D=1/6
D=1/3
DC
-25
sin(θ=180°)
333
HRU0203A Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
HRU0203ATRF
Package Name : URP
Package Code : PTSP0002ZA-A
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel) 1 2
Cathode mark
Mark
1. Cathode
2. Anode
Y
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM *1 30 V Average rectified current IO *1 200 mA Non-Repetitive peak forward surge current IFSM *2 2 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.50 V IF = 200 mA Reverse current IR — — 50 μA VR = 30 V Thermal resistance Rth(j-a) — 520 — °C/W Polyimide board *1 Note: 1. Polyimide board
Unit: mm
3.0
0.8
1.5
20h×15w×0.8t
1.5
HRU0203A
334
Main Characteristics
0 10 20 30 40 500 0.2 0.4 0.6 0.8 1.0
0
0.1
0.4
0.3
0.2
0 3020 40
0.5
Pulse test
10–2
10–1
10–4
10–3
10
10–5
1.0
10–2
10–7
10–4
10–3
10–6
10–5
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fo
rwa
rd c
urr
en
t I F
(
A)
Ta = 75°C
Ta = 25°C
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Pulse test
Ta = 75°C
Ta = 25°C
D=2/3
D=5/6
sin(θ=180°)
10
0.6
0.300.250
Re
ve
rse
po
we
r d
issip
atio
n
Pd
(
W)
Fig4. Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Fig3. Forward power dissipation vs. Forward current
Forward current IF (A)
Fo
rwa
rd p
ow
er
dis
sip
atio
n
Pd
(
W)
DC
0.200
0.04
0.16
D=1/3
0.08
0.12
0.20
D=1/2
D=1/2
D=1/6
sin(θ=180°)
0.150.100.05
t
T
0A
Tj = 25°C
D = —T
t
t
T
0V
Tj = 125°C
D = —T
t
HRU0203A
335
0 50 10025 75 1250
0.20
0.10
0.30
0.25
0.15
0.05
Ave
rag
e r
ectifie
d c
urr
en
t
I O
(A
)
Ambient temperature Ta (°C)
Fig.5 Average rectified current vs. Ambient temperature
D=1/2
VR=VRRM/2
Tj =125°C
Rth(j-a)=520°C/W
D=1/6
D=1/3
DC
-25
sin(θ=180°)
336
HRU0302A Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
HRU0302ATRF
Package Name : URP
Package Code : PTSP0002ZA-A
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel) 1 2Z
Cathode mark
Mark
1. Cathode
2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM *1 20 V Average rectified current IO *1 300 mA Non-Repetitive peak forward surge current IFSM *2 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.4 to Fig.6. 2. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.40 V IF = 300 mA Reverse current IR — — 100 μA VR = 20 V Capacitance C — 70 — pF VR = 0 V, f = 1 MHz Thermal resistance Rth(j-a) — 440 — °C/W Polyimide board *1 Note: 1. Polyimide board
Unit: mm
3.0
0.8
1.5
20h×15w×0.8t
1.5
HRU0302A
337
Main Characteristics
0 5 10 15 20 25
Pulse test10–1
10–6
10–3
10–2
10–5
10–4
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Ta = 75°C
Ta = 25°C
10
1.0
100
1.0 4010
f=1MHz
Pulse test
Pulse test
10
10–4
10–1
1.0
10–3
10–2
Fo
rwa
rd c
urr
en
t I F
(
A)
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Ca
pa
cita
nce
C
(p
F)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Ta = 75°C
Ta = 25°C
0 0.2 0.4 0.6 0.8 1.0
HRU0302A
338
0
VR=VRRM/2
Tj =125°C
Rth(j-a)=440°C/W
t
T
0A
Tj = 25°C
D = —T
t t
T
0V
Tj = 125°C
D = —T
t
0.300.250
0.200
0.05
0.20
0.10
0.15
0.25
0.150.100.050
0.05
0.20
0.15
0.10
0 2015 255
Re
ve
rse
po
we
r d
issip
atio
n P
d (
W)
10
D=2/3
D=5/6
sin(θ=180°)
D=1/2DC
D=1/3
D=1/2
D=1/6
sin(θ=180°)
0 50 10025 75 125
Ave
rag
e r
ectifie
d c
urr
en
t I O
(
A)
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
-25
0.10
0.20
0.40
0.30 DC
D=1/3
D=1/2
D=1/6
sin(θ=180°)
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Fig.4 Forward power dissipation vs. Forward current
Forward current IF (A)
Fo
rwa
rd p
ow
er
dis
sip
atio
n P
d (
W)
339
HRV103A Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
Cathode mark
Mark
1. Cathode
2. Anode
Package Name : TURP
Package Code : PUSF0002ZC-A
HRV103ATRF, HRV103AKRF
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
KRF (8,000 pcs / reel) S11 2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Reverse voltage VR 30 V Average rectified current IO *2 1 A Non-Repetitive peak forward surge current IFSM *1 5 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. 10 ms sine wave 1 pulse 2. Ta = 44°C, With Ceramics board (board size: 50 mm × 50 mm, Land size 2 mm × 2 mm)
Short form wave (θ180°C), VR = 10 V.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.27 IF = 100 mA VF2 — — 0.36 IF = 700 mA
Forward voltage
VF3 — — 0.42
V
IF = 1 A IR1 — — 100 VR = 5 V Reverse current IR2 — — 1000
μA VR = 30 V
Capacitance C — — 40 pF VR = 10 V, f = 1 MHz — 100 — Ceramics board *1 Thermal resistance Rth(j-a) — 200 —
°C/W Glass epoxy board *2
Notes: 1. Ceramics board 2. Glass epoxy board
1.0
50h × 50w × 0.8t
Unit: mm
2.0
0.3
0.5
2.0
2.0
1.0
50h × 50w × 0.8t
Unit: mm
6.0
0.5
6.0
0.3
2.0
3. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow.
HRV103A
340
Main Characteristics
0 10 20 30 400 0.2 0.4 0.6 0.8 1.0
Pulse test
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
10–3
10–2
10–5
10–4
1.0
10–6
10–1
10–1
10–6
10–3
10–2
10–5
10–4
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fo
rwa
rd c
urr
en
t I F
(
A)
Ta = 25°C
Pulse test
Ta = 75°C
Ta = 25°C
1.0
10
101.00.1
100
f=1MHz
Pulse test
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Ca
pa
cita
nce
C
(
pF
)
Ta = 75°C
HRV103A
341
0 50 10025 75 1250
0.8
0.4
1.2
1.0
0.6
0.2
Ave
rag
e r
ectifie
d c
urr
en
t
I O
(A
)
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
VR=VRRM/3
Tj =125°C
Rth(j−a)=100°C/W
D=1/6
D=1/3
−25
DC
1.50
Re
ve
rse
po
we
r d
issip
atio
n
Pd
(
W)
Fig.4 Forward power dissipation vs. Forward current
Forward current IF (A)
Fo
rwa
rd p
ow
er
dis
sip
atio
n
Pd
(
W)
DC
1.00
0.1
0.6
D=1/3
0.2
0.5
0.8
D=1/2
sin
0.5
t
T
0A
Ta = 25°C
D = —T
t
0.3
0.4
0.7 D=1/6
5
4
3
2
403020100
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
0
6
t
T
0V
D = —T
t
Tj = 125°C
D=1/2
7
8
sin
D=5/6
1
D=2/3
D=1/2
sin(θ=180°)
342
HRV103B Silicon Schottky Barrier Diode for Rectifying
Features • Low reverse current and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
Cathode mark
Mark
1. Cathode
2. Anode
Package Name : TURP
Package Code : PUSF0002ZC-A
HRV103BTRF, HRV103BKRF
Taping Abbreviation (Quantity)
TRF (4,000 pcs / reel)
KRF (8,000 pcs / reel) S21 2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Reverse voltage VR 30 V Average rectified current IO *2 1 A Non-Repetitive peak forward surge current IFSM *1 5 A Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. 10 ms sine wave 1 pulse 2. Ta = 48°C, With Ceramics board (board size: 50 mm × 50 mm, Land size 2 mm × 2 mm)
Short form wave (θ180°C), VR = 15 V.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.35 IF = 100 mA VF2 — — 0.45 IF = 700 mA
Forward voltage
VF3 — — 0.50
V
IF = 1 A IR1 — — 10 VR = 5 V Reverse current IR2 — — 100
μA VR = 30 V
Capacitance C — — 40 pF VR = 10 V, f = 1 MHz — 100 — Ceramics board *1 Thermal resistance Rth(j-a) — 200 —
°C/W Glass epoxy board *2
Notes: 1. Ceramics board 2. Glass epoxy board
1.0
50h × 50w × 0.8t
Unit: mm
2.0
0.3
0.5
2.0
2.0
1.0
50h × 50w × 0.8t
Unit: mm
6.0
0.5
6.0
0.3
2.0
3. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow.
HRV103B
343
Main Characteristics
0 0.2 0.4 0.6 0.8 1.0
Pulse test
Fo
rwa
rd c
urr
en
t I F
(
A)
Ta = 75°C
Ta = 25°C
10–3
10–2
10–5
10–4
1.0
10–6
10–1
1.0
10
101.00.1
100
f=1MHz
Pulse test
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Ca
pa
cita
nce
C
(
pF
)
0 10 20 30 40
Re
ve
rse
cu
rre
nt I R
(
A)
Pulse test
Ta = 25°C
Ta = 75°C
10–3
10–5
10–4
10–7
10–6
10–2
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
HRV103B
344
75 10025 500 125
1.2
1.0
0.8
0.6
0
0.4
0.2
–25
D=1/2
D=1/6
Sin(θ=180°)
D=1/3
DC
Ave
rag
e r
ectifie
d c
urr
en
t
I O (
A)
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
150
Fo
rwa
rd p
ow
er
dis
sip
atio
n P
d (
W)
Forward current IF (A)
Fig.4 Forward power dissipation vs. Forward current
1.51.00
0.50
0.1
0.4
0.6
0.8
0.7 t
T
0A
D = —T
t
Ta= 25°C
D=1/6
D=1/3
D=1/2
0.2
0.3
0.5
Sin
DC
3.0
2.5
1.5
1.0
0.5
403020100
0
4.0
D=1/2
D=2/3
D=5/6
2.0
3.5 t
T
0V
Tj = 150°C
D = —T
t
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Re
ve
rse
po
we
r d
issip
atio
n P
d (
W)
VR = VRRM/2Tj = 150°CRth(j-a) = 100°C/W
Sin
345
RKR0503AKH Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1. Cathode
2. Anode
Package Name : TURPPackage Code : PUSF0002ZC-A
RKR0503AKHP, RKR0503AKHR
Taping Abbreviation (Quantity)
P (4,000 pcs / reel)R (8,000 pcs / reel)
Cathode mark
Mark
S81 2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Reverse voltage VR 30 V Average rectified current IO *1 *2 0.5 A Non-Repetitive peak forward surge current IFSM *3 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.6 with Glass epoxy board. 2. Ta = 62°C, With Glass epoxy board (board size: 50 mm × 50 mm, Land size 6 mm × 6 mm)
Short form wave (θ180°C), VR = 10 V. 3. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.37 V IF = 500 mA Reverse current IR — — 500 μA VR = 30 V Thermal resistance Rth(j-a) — 200 — °C/W Glass epoxy board *1 Notes: 1. Glass epoxy board
1.0
50h×50w×0.8t
Unit: mm
6.0
0.5
6.0
0.3
2.0
2. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow.
RKR0503AKH
346
Main Characteristics
1.0
10–1
Pulse test
10–4
10–3
10–5
10–2
Ta = 25°C
Ta = 75°C
Re
ve
rse
cu
rre
nt I R
(
A)
Ca
pa
cita
nce
C
(
pF
)
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I F
(
A)
0 0.1 0.2 0.3 0.4 0.5
10
1.0
100
101.00.1 100
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
1000f = 1MHz
Pulse test
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
10–1
10–4
10–3
10–5
10–2
10–6
0 5 10 15 20 25 30
Ta = 25°C
Ta = 75°C
Pulse test
RKR0503AKH
347
Re
ve
rse
po
we
r d
issip
atio
n
Pd
(
W)
Ave
rag
e r
ectifie
d c
urr
en
t
I O
(A
)
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
Fo
rwa
rd p
ow
er
dis
sip
atio
n
Pd
(
W)
Fig.4 Forward power dissipation vs. Forward current
Forward current IF (A)
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
0 0.2 0.40.3 0.5
D=1/6
D=1/3
DC
0.1
t
T
0A
D = —T
t
Ta = 25°C
0.6
D=1/2
0.35
0.4
0.3
0.2
0
0.05
0.1
0.15
0.25 Sin
0.2
0.1
0.3
0.4
00 50 10025 75 125-25
0.5
0.6 VR = 10V
Tj = 125°C
Rth(j-a) = 200°C/W
D=1/3
Sin(θ=180°)D=1/6
DC
D=1/2
0.5
1
0 10 30
D=1/2
D=2/3
Sin
D=5/6
t
T
0V
D = —T
t
Tj = 125°C
0
1.5
2
2.5
20 40
348
RKR0503BKH Silicon Schottky Barrier Diode for Rectifying
Features • Low reverse current drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1. Cathode
2. Anode
Package Name : TURPPackage Code : PUSF0002ZC-A
RKR0503BKHP, RKR0503BKHR
Taping Abbreviation (Quantity)
P (4,000 pcs / reel)R (8,000 pcs / reel)
Cathode mark
Mark
S91 2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Reverse voltage VR 30 V Average rectified current IO *1 *2 0.5 A Non-Repetitive peak forward surge current IFSM *3 1 A Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. See from Fig.6 with Glass epoxy board. 2. Ta = 63°C, With Glass epoxy board (board size: 50 mm × 50 mm, Land size 6 mm × 6 mm)
Short form wave (θ180°C), VR = 15 V. 3. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.34 V IF = 100 mA Forward voltage VF2 — — 0.44 V IF = 500 mA
Reverse current IR — — 100 μA VR = 30 V Thermal resistance Rth(j-a) — 200 — °C/W Glass epoxy board *1 Notes: 1. Glass epoxy board
1.0
50h×50w×0.8t
Unit: mm
6.0
0.5
6.0
0.3
2.0
2. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow.
RKR0503BKH
349
Main Characteristics
1.0
10–1
10–4
10–3
10–5
10–2
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Revers
e c
urr
ent I R
(
A)
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Capacitance C
(
pF
)
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Forw
ard
curr
ent I F
(
A)
0 0.1 0.2 0.3 0.4 0.5
Ta = 25°C
Ta = 75°C
10
1.0
100
101.00.1
1000
Pulse test
10–4
10–3
10–5
10–2
10–6
0 5 10 15 20 25 30
Ta = 25°C
Ta = 75°C
10–1
Pulse test
f = 1MHz
Pulse test
100
RKR0503BKH
350
Re
ve
rse
po
we
r d
issip
atio
n
Pd
(
W)
Ave
rag
e r
ectifie
d c
urr
en
t
I O
(A
)
Fig.4 Forward power dissipation vs. Forward current
Forward current IF (A)
Fo
rwa
rd p
ow
er
dis
sip
atio
n
Pd
(
W)
0 0.2 0.40.3 0.5
DC
0.1
t
T
0A
D = —T
t
Ta = 25°C
0.6
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
0.2
0.1
0.3
0.4
00 50 10025 75 125
VR = VRRM/2
Tj = 150°C
Rth(j-a) = 200°C/W0.5
0.6
150-25
D=1/6
D=1/2
D=1/3
Sin(θ=180°)
0.35
0.4
0.3
0.2
0
0.05
0.1
0.15
0.25
Sin
D=1/6
D=1/3
D=1/2
DC
0.5
1
0 10 30
D=1/2
D=2/3
D=5/6
t
T
0V
D = —T
t
Tj = 150°C
0
1.5
2
2.5
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
20 40
Sin
351
RKR0505AKH Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1. Cathode
2. Anode
Package Name : TURPPackage Code : PUSF0002ZC-A
RKR0505AKHP, RKR0505AKHR
Taping Abbreviation (Quantity)
P(4,000 pcs / reel)R (8,000 pcs / reel)
Cathode mark
Mark
S61 2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 50 V Reverse voltage VR 20 V Average rectified current IO *1 *2 0.5 A Non-Repetitive peak forward surge current IFSM *3 3 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.6 with Glass epoxy board. 2. Ta = 40°C, With Glass epoxy board (board size: 50 mm × 50 mm, Land size 6 mm × 6 mm)
Short form wave (θ180°C), VR = 10 V. 3. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.25 IF = 10 mA Forward voltage VF2 — — 0.46
V IF = 500 mA
IR1 — — 200 VR = 10 V Reverse current IR2 — — 400
μA VR = 20 V
Capacitance C — — 20 pF VR = 10 V, f = 1 MHz — 100 — Ceramics board *1 Thermal resistance Rth(j-a) — 200 —
°C/W Glass epoxy board *2
Notes: 1. Ceramics board 2. Glass epoxy board
1.0
50h×50w×0.8t
Unit: mm
2.0
0.3
0.5
2.0
2.0
1.0
50h×50w×0.8t
Unit: mm
6.0
0.5
6.0
0.3
2.0
3. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow.
RKR0505AKH
352
Main Characteristics
1.0
10–1
Pulse test Pulse test
10
1.0
100
10–4
10–3
10–5
10–2
Ta = 25°C
Ta = 75°C
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Ca
pa
cita
nce
C
(
pF
)
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I F
(
A)
0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20
101.00.1 100
f = 1MHz
Pulse test
10–1
10–4
10–3
10–5
10–2
10–6
Ta = 75°C
Ta = 25°C
RKR0505AKH
353
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Revers
e p
ow
er
dis
sip
ation
Pd
(W
)
Avera
ge r
ectified c
urr
ent I O
(
A)
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
Fig.4 Forward power dissipation vs. Forward current
Forward current IF (A)
Forw
ard
pow
er
dis
sip
ation
Pd
(W
)
0.2
0.1
0.3
0.4
00
Sin
0.2 0.40.3 0.5
D=1/6
D=1/3
DC
0.1
t
T
0A
D = —T
t
Ta= 25°C
0.5
0.6
D=1/2
2
4
0 20 4010 30 50
D=1/2
D=2/3
Sin
D=5/6
t
T
0V
D = —T
t
Tj = 125°C
0
6
8
10
60
0.2
0.1
0.3
0.4
00 50 10025 75 125-25
0.5
0.6 VR = 10V
Tj = 125°C
Rth(j-a) = 200°C/W
DC
D=1/2
D=1/3
Sin(θ=180°)D=1/6
354
RKR0505BKH Silicon Schottky Barrier Diode for Rectifying
Features • Low forward voltage drop and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1. Cathode
2. Anode
Package Name : TURPPackage Code : PUSF0002ZC-A
RKR0505BKHP, RKR0505BKHR
Taping Abbreviation (Quantity)
P(4,000 pcs / reel)R (8,000 pcs / reel)
Cathode mark
Mark
S71 2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 50 V Reverse voltage VR 40 V Average rectified current IO *1 *2 0.5 A Non-Repetitive peak forward surge current IFSM *3 3 A Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. See from Fig.6 with Glass epoxy board. 2. Ta = 41°C, With Glass epoxy board (board size: 50 mm × 50 mm, Land size 6 mm × 6 mm)
Short form wave (θ180°C), VR = 25 V. 3. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.60 V IF = 500 mA
IR1 — — 20 VR = 10 V Reverse current IR2 — — 40
μA VR = 30 V
Capacitance C — — 20 pF VR = 10 V, f = 1 MHz — 100 — Ceramics board *1 Thermal resistance Rth(j-a) — 200 —
°C/W Glass epoxy board *2
Notes: 1. Ceramics board 2. Glass epoxy board
1.0
50h×50w×0.8t
Unit: mm
2.0
0.3
0.5
2.0
2.0
1.0
50h×50w×0.8t
Unit: mm
6.0
0.5
6.0
0.3
2.0
3. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow.
RKR0505BKH
355
Main Characteristics
1.0
10–1
Pulse test Pulse test
10
1.0
100
10–4
10–3
10–5
10–2
Ta = 75°C
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Revers
e c
urr
ent I R
(
A)
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Capacitance C
(
pF
)
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Forw
ard
curr
ent I F
(
A)
0 10 20 30 50
101.00.1 100
f = 1MHz
Pulse test
10–2
10–5
10–4
10–6
10–3
10–7
Ta = 25°C
40
Ta = 25°C
0 0.1 0.2 0.3 0.4 0.5 0.6
Ta = 75°C
RKR0505BKH
356
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Revers
e p
ow
er
dis
sip
ation
Pd
(W
)
Avera
ge r
ectified c
urr
ent I O
(
A)
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
Fig.4 Forward power dissipation vs. Forward current
Forward current IF (A)
Forw
ard
pow
er
dis
sip
ation
Pd
(W
)
0.2
0.1
0.3
0.4
00
Sin
0.2 0.40.3 0.5
D=1/6D=1/3
DC
D=1/2
0.1
t
T
0A
D = —T
t
Ta = 25°C
0.5
0.6
0.2
0.1
0.3
0.4
00 50 10025 75 125
VR = VRRM/2
Tj = 150°C
Rth(j-a) = 200°C/W0.5
0.6
150-25
D=1/6
DC
D=1/2
D=1/3
Sin(θ=180°)
1.0
0.5
1.5
2.0
0 20 4010 30 50
Sin
t
T
0V
D = —T
t
Tj = 150°C
060
D=2/3
D=1/2
D=5/6
357
RKR0703BKH Silicon Schottky Barrier Diode for Rectifying
Features • Low reverse current and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1. Cathode
2. Anode
Package Name : TURPPackage Code : PUSF0002ZC-A
RKR0703BKHP, RKR0703BKHR
Taping Abbreviation (Quantity)
P(4,000 pcs / reel)R (8,000 pcs / reel)
Cathode mark
Mark
S51 2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Reverse voltage VR 30 V Average rectified current IO *1 *2 0.7 A Non-Repetitive peak forward surge current IFSM *3 3 A Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. See from Fig.6 with Glass epoxy board. 2. Ta = 30°C, With Glass epoxy board (board size: 50 mm × 50 mm, Land size 6 mm × 6 mm)
Short form wave (θ180°C), VR = 15 V. 3. 10 ms sine wave 1 pulse.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.37 IF = 100 mA Forward voltage VF2 — — 0.55
V IF = 700 mA
IR1 — — 10 VR = 5 V Reverse current IR2 — — 50
μA VR = 30 V
Capacitance C — — 20 pF VR = 10 V, f = 1 MHz — 100 — Ceramics board *1 Thermal resistance Rth(j-a) — 200 —
°C/W Glass epoxy board *2
Notes: 1. Ceramics board 2. Glass epoxy board
1.0
50h×50w×0.8t
Unit: mm
2.0
0.3
0.5
2.0
2.0
1.0
50h×50w×0.8t
Unit: mm
6.0
0.5
6.0
0.3
2.0
3. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow.
RKR0703BKH
358
Main Characteristics
0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40
Pulse test
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I F
(
A)
Re
ve
rse
cu
rre
nt I R
(
A)
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
1.0
10
101.00.1
100
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Ca
pa
cita
nce
C
(
pF
)
Ta = 75°C
Ta = 25°C
Ta = 25°C
Ta = 75°C
10–3
10–2
10–5
10–4
1.0
10–6
10–1
10–3
10–5
10–4
10–7
10–6
10–2
100
f=1MHz
Pulse test
Pulse test
RKR0703BKH
359
Fo
rwa
rd p
ow
er
dis
sip
atio
n
Pd
(
W)
Ave
rag
e r
ectifie
d c
urr
en
t
I O
(A
)
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
Re
ve
rse
po
we
r d
issip
atio
n
Pd
(
W)
0.70.20
0.10
0.1
0.4
0.6
0.2
0.3
0.5
DC
Forward current IF (A)
Fig.4 Forward power dissipation vs. Forward current
0.5 0.60.3 0.4
t
T
0A
D = —T
t
Ta = 25°C
0.8
D=1/6
D=1/2
sinD=1/3
0.5
0.4
0.3
0.2
0.1
403020100
0.6
t
T
0V
D = —T
t
Tj = 150°C
0.7
0.8
0
75 10025 500 125
0.7
0.8
0.6
0
0.4
0.1
–25 150
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
0.2
0.3
0.5
DC
VR = VRRM/2
Tj = 150°C
Rth(j-a) = 200°C/W
D=1/6
D=1/3
D=1/2
Sin(θ=180°)
D=1/2
sin
D=2/3
D=5/6
360
RKR104BKH Silicon Schottky Barrier Diode for Rectifying
Features • Low reverse current and suitable for high efficiency rectifying.
Ordering Information and Pin Arrangement
1. Cathode
2. Anode
Package Name : TURPPackage Code : PUSF0002ZC-A
RKR104BKHP, RKR104BKHR
Taping Abbreviation (Quantity)
P(4,000 pcs / reel)R (8,000 pcs / reel)
Cathode mark
Mark
S41 2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 40 V Reverse voltage VR 40 V Average rectified current IO *2 1 A Non-Repetitive peak forward surge current IFSM *1 5 A Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. 10 ms sine wave 1 pulse 2. Ta = 36°C, With Ceramics board (board size: 50 mm × 50 mm, Land size 2 mm × 2 mm)
Short form wave (θ180°C), VR = 20 V.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.37 IF = 100 mA Forward voltage VF2 — — 0.55
V IF = 700 mA
IR1 — — 10 VR = 5 V Reverse current IR2 — — 50
μA VR = 40 V
Capacitance C — — 35 pF VR = 10 V, f = 1 MHz — 100 — Ceramics board *1 Thermal resistance Rth(j-a) — 200 —
°C/W Glass epoxy board *2
Notes: 1. Ceramics board 2. Glass epoxy board
1.0
50h × 50w × 0.8t
Unit: mm
2.0
0.3
0.5
2.0
2.0
1.0
50h × 50w × 0.8t
Unit: mm
6.0
0.5
6.0
0.3
2.0
3. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow.
RKR104BKH
361
Main Characteristics
0 10 20 30 400 0.2 0.4 0.6 0.8 1.0
Pulse test
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
10–3
10–2
10–5
10–4
1.0
10–6
10–1
10–2
10–7
10–4
10–3
10–6
10–5
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Fo
rwa
rd c
urr
en
t I F
(
A) Ta = 25°C
Pulse test
1.0
10
101.00.1
100
f=1MHz
Pulse test
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Ca
pa
cita
nce
C
(
pF
)
Ta = 75°C
Ta = 75°C
Ta = 25°C
RKR104BKH
362
0 50 10025 75 1250
0.8
0.4
1.2
1.0
0.6
0.2
Ave
rag
e r
ectifie
d c
urr
en
t
I O
(A
)
Ambient temperature Ta (°C)
Fig.6 Average rectified current vs. Ambient temperature
−25
DC
1.50
Re
ve
rse
po
we
r d
issip
atio
n
Pd
(
W)
Fig.4 Forward power dissipation vs. Forward current
Forward current IF (A)
Fo
rwa
rd p
ow
er
dis
sip
atio
n
Pd
(
W)
1.00
D=1/3D=1/2
sin
0.5
t
T
0A
Ta = 25°C
D = —T
t
D=1/6
403020100
Fig.5 Reverse power dissipation vs. Reverse voltage
Reverse voltage VR (V)
0
t
T
0V
D = —T
t
Tj = 150°C
D=2/3
D=1/2
sin
0.4
0.6
0.8
0.2
1.0
1.2
DC
2.5
2.0
1.5
1.0
0.5
3.0
3.5
4.0
D=5/6
50
150
VR = VRRM/2Tj = 150°CRth(j-a) = 100°C/W
D=1/3
sin(θ=180°)
D=1/2
D=1/6
363
HSM107S Silicon Schottky Barrier Diode for System Protection
Features • Low VF and high efficiency. • HSM107S which is interconnected in series configuration is designed for protection from not only external
excessive voltage but also miss-operation on electric systems
Ordering Information and Pin Arrangement
2 1
C5
(Top view) (Top view)
3HSM107STR, HSM107STL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
2 1
3
1. Cathode 2
2. Anode 1
3. Cathode 1
Anode 2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Reverse voltage VR 8 V Peak forward current IFM 0.1 A Non-Repetitive peak forward surge current IFSM *1 0.5 A Average rectified current IO *2 50 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Rectangular wave, 10 ms. 2. Per one device.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 8 — — V IR = 1.0 mA Reverse current IR — — 30 μA VR = 5 V Forward voltage VF — — 0.3 V IF = 10 mA ESD Capability *2 — 100 — — V C = 200 pF, Both forward
and reverse direction 1 pulse Notes: 1. Per one device. 2. Failure Criterion ; IR ≥ 60 μA at VR = 5 V.
HSM107S
364
Main Characteristics
0 0.1 0.2 0.3 0.4 0.5 0 2 10864
10
1.0
1.0 4010
f = 1MHz
10–3
10–5
10–2
10–4
10–6
10–1
0.1
10–3
10–5
10–2
10–4
10–610–7
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I F
(
A)
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Ca
pa
cita
nce
C
(
pF
)
365
HSM126S Silicon Schottky Barrier Diode for System Protection
Features • HSM126S which is connected in series configuration enable to protect electric systems from miss-operation against
external + and – surge. • Low VF and low leakage current.
Ordering Information and Pin Arrangement
2 1
S14
(Top view) (Top view)
3HSM126STR, HSM126STL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
2 1
3
1. Cathode 2
2. Anode 1
3. Cathode 1
Anode 2
Absolute Maximum Ratings *3 (Ta = 25°C)
Item Symbol Value Unit Repetitive peak reverse voltage VRRM 20 V Average rectified current IO *1 200 mA Non-Repetitive peak forward surge current IFSM *2 2 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Sine wave, Two device total. 2. 50 Hz half sine wave 1 pulse. 3. Per one device.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Reverse current IR — — 2.0 μA VR = 5 V Forward voltage VF — — 0.35 V IF = 10 mA Capacitance C — 40 — pF VR = 0 V, f = 1 MHz Note: 1. Per one device.
HSM126S
366
Main Characteristics
0 5 10 15 20 25 30
Pulse test
1.0
10
101.00.1
100
0 0.2 0.4 0.6 0.8 1.0
Pulse test10
1.0
10–3
10–2
10–4
10–1
10–5
Ta = 25°C
Ta = 75°C
10–3
10–5
10–2
10–4
10–6
10–7
Ta = 25°C
Ta = 75°C
f = 1MHz
Pulse test
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
Fo
rwa
rd c
urr
en
t I F
(
A)
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
Re
ve
rse
cu
rre
nt I R
(
A)
Ca
pa
cita
nce
C
(
pF
)
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
367
RKZ-KP Series Silicon Planar Zener Diode for Surge Absorption
Features • High ESD-Capability 30 kV, human body model (IEC61000-4-2). • Wide zener voltage range from 6.2 V through 8.2 V. • Halogen free, Environmental friendly Package include Conformity to RoHS Directive.
Ordering Information and Pin Arrangement
Cathode mark
Mark
1. Cathode
2. Anode
1 2U
Package Code: PXSN0002ZB-A
RKZ-KP Series
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : MP6
Mark Code Part No. Mark No.
RKZ6.2BKP U RKZ6.8BKP V RKZ8.2BKP W
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd *1 100 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. With P.C. Board.
Electrical Characteristics (Ta = 25°C)
Zener Voltage Reverse Current Dynamic Resistance ESD-Capability
VZ (V) *1 Test
Condition IR (µA) Test
Condition rd (Ω) Test
Condition (kV) *2 Part No. Min Max IZ (mA) Max VR (V) Max IZ (mA) Min
RKZ6.2BKP 5.86 6.53 5 2 3.0 50 5 30 RKZ6.8BKP 6.47 7.14 5 2 3.5 30 5 30 RKZ8.2BKP 7.76 8.64 5 2 5.0 30 5 30 Notes: 1. Tested with pulse (Pw = 40 ms). 2. C =150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse.
Failure criterion should according to IR spec. 3. Please do not use the soldering iron due to avoid high stress to the MP6 package.
RKZ-KP Series
368
Main Characteristics
250
200
150
100
50
200150100500
0
Pow
er
Dis
sip
ation P
d (
mW
)
Ambient Temperature Ta (°C)
Fig.2 Power Dissipation vs. Ambient Temperature
Polyimide board
20h×15w×0.8t
Unit: mm
0 2 1086410-6
10-3
10-5
10-4
10-2
Zener Voltage VZ (V)
Fig.1 Zener current vs. Zener voltage
Zener
Curr
ent I Z
(
mA
)
RK
Z6.2
BK
P
RK
Z6.8
BK
P
RK
Z8.2
BK
P
3.0
0.8
1.5
1.5
369
HZL6.2Z4 Silicon Planar Zener Diode for Surge Absorb
Features • Low capacitance (C = 4.0 pF max) and can protect ESD of signal line.
Ordering Information and Pin Arrangement
1 2Y
Cathode mark
Mark
1. Cathode
2. Anode
Package Code: PXSF0002ZA-A
Taping Abbreviation (Quantity)
KRF (10,000 pcs / reel)
Package Name : EFP
HZL6.2Z4KRF
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 100 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: See Fig.2.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 5.90 — 6.50 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 3 µA VR = 5.5 V Capacitance C — — 4.0 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 60 Ω IZ = 5 mA ESD-Capability *1 — 8 — — kV C = 150 pF, R = 330 Ω, Both Forward
and reverse direction 10 pulse Notes: 1. Failure criterion ; IR > 3 µA at VR = 5.5 V. 2. In the EFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HZL6.2Z4
370
Main Characteristics
t Ta = 25°Cnonrepetitive
Fig.3 Surge Reverse Power Ratings
Time t (ms)
1.0
10
No
nre
pe
titive
Su
rge
Re
ve
rse
s P
ow
er
P
RS
M (
W)
102
103
104
PRSM
10 102 10310-2 10-1 1.0
0 2 10864
250
200
150
100
50
200150100500
0
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n P
d (
mW
)
Polyimide board
3.0
0.8
1.5
20h×15w×0.8t
1.5
unit: mm
10–5
10–6
10–4
10–3
10–2
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t I Z
(
A)
371
HZL6.8Z4 Silicon Planar Zener Diode for Surge Absorb
Features • Low capacitance (C = 4.0 pF max) and can protect ESD of signal line.
Ordering Information and Pin Arrangement
1 2Z
Cathode mark
Mark
1. Cathode
2. Anode
Package Code: PXSF0002ZA-A
Taping Abbreviation (Quantity)
KRF (10,000 pcs / reel)
Package Name : EFP
HZL6.8Z4KRF
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 100 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: See Fig.2.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — — 4.0 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *1 — 8 — — kV C = 150 pF, R = 330 Ω, Both Forward
and reverse direction 10 pulse Notes: 1. Failure criterion ; IR > 2 µA at VR = 3.5 V. 2. In the EFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
HZL6.8Z4
372
Main Characteristics
t Ta = 25°Cnonrepetitive
Fig.3 Surge Reverse Power Ratings
Time t (ms)
1.0
10
No
nre
pe
titive
Su
rge
Re
ve
rse
s P
ow
er
P
RS
M (
W)
102
103
104
PRSM
10 102 10310–2 10–1 1.0
0 2 10864
250
200
150
100
50
200150100500
0
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n P
d (
mW
)
Polyimide board
3.0
0.8
1.5
20h×15w×0.8t
1.5
unit: mm
10–5
10–6
10–4
10–3
10–2
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t I Z
(
A)
373
HZD6.2Z4 Silicon Planar Zener Diode for Surge Absorb
Features • Low capacitance (C = 4.0 pF max) and can protect ESD of signal line.
Ordering Information and Pin Arrangement
1 2
Cathode mark
Mark
1. Cathode
2. Anode
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : SFP
HZD6.2Z4KRF
N1
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: See Fig.2.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 5.9 — 6.5 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 3 µA VR = 5.5 V Capacitance C — — 4 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 60 Ω IZ = 5 mA ESD-Capability *1*2 — 8 — — kV C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse Notes: 1. Failure criterion ; IR > 3 µA at VR = 5.5 V. 2. Between cathode and anode. 3. In the SFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,
the solderability of the lead tip has been ignored. Please test and confirm before use.
HZD6.2Z4
374
Main Characteristics
t Ta = 25°Cnonrepetitive
Fig.3 Surge Reverse Power Ratings
Time t (s)
1.0
10
No
nre
pe
titive
Su
rge
Re
ve
rse
s P
ow
er
P
RS
M (
W)
102
103
104
PRSM
10 102 10310-2 10-1 1.0
0 2 10864
250
200
150
100
50
200150100500
0
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n P
d (
mW
)
Polyimide board
3.0
0.8
1.5
20h×15w×0.8t
1.5
unit: mm
10–5
10–6
10–4
10–3
10–2
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t I Z
(
A)
375
HZD6.8Z4 Silicon Planar Zener Diode for Surge Absorb
Features • Low capacitance (C = 4.0 pF max) and can protect ESD of signal line.
Ordering Information and Pin Arrangement
1 2
Cathode mark
Mark
1. Cathode
2. Anode
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Package Name : SFP
HZD6.8Z4KRF
N2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: See Fig.2.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — — 4 pF VR = 1 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *1*2 — 8 — — kV C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse Notes: 1. Failure criterion ; IR > 2 µA at VR = 3.5 V. 2. Between cathode and anode. 3. In the SFP package, some lead is exposed because the tip of the lead is used as the cutting plane. Therefore,
the solderability of the lead tip has been ignored. Please test and confirm before use.
HZD6.8Z4
376
Main Characteristics
t Ta = 25°Cnonrepetitive
Fig.3 Surge Reverse Power Ratings
Time t (s)
1.0
10
No
nre
pe
titive
Su
rge
Re
ve
rse
s P
ow
er
P
RS
M (
W)
102
103
104
PRSM
10 102 10310–2 10–1 1.0
0 2 10864
250
200
150
100
50
200150100500
0
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n P
d (
mW
)
Polyimide board
3.0
0.8
1.5
20h×15w×0.8t
1.5
unit: mm
10–5
10–6
10–4
10–3
10–2
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t I Z
(
A)
377
HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb
Features • Low capacitance (C = 8.5 pF max) and can protect signal line from ESD.
Ordering Information and Pin Arrangement
HZU6.2ZTRF
Package Name : URP
Package Code : PTSP0002ZA-A
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel) 1 2
Cathode mark
Mark
1. Cathode
2. Anode62Z
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: See Fig.2.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 5.90 — 6.50 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 3 µA VR = 5.5 V Capacitance C — 8.0 8.5 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 60 Ω IZ = 5 mA
HZU6.2Z
378
Main Characteristics
t Ta = 25°Cnonrepetitive
Fig.3 Surge Reverse Power Ratings
Time t (s)
1.0
10
No
nre
pe
titive
Su
rge
Re
ve
rse
s P
ow
er
P
RS
M (
W)
102
103
104
PRSM
10-2 10-1 1.010-5 10-4 10-3
0 2 10864
250
200
150
100
50
200150100500
0
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n P
d (
mW
)
Polyimide board
3.0
0.8
1.5
20hx15wx0.8t
1.5
unit: mm
10-5
10-6
10-4
10-3
10-2
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t I Z
(
A)
HZU6.2Z
379
1.0
10
102
103
104
10 102 10310-2 10-1 1.0
Fig.4 Transient Thermal Impedance
Time t (s)
Tra
nsie
nt T
herm
al Im
pedance Z
th (
°C/W
)
380
HZU6.8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb
Features • Low capacitance (C = 25 pF max) and can protect signal line from ESD.
Ordering Information and Pin Arrangement
HZU6.8ZTRF
Package Name : URP
Package Code : PTSP0002ZA-A
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel) 1 268Z
Cathode mark
Mark
1. Cathode
2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: See Fig.2.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.0 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — — 25 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability * — 20 — — kV C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse Note: Failure criterion ; IR > 2 µA at VR = 3.5 V.
HZU6.8Z
381
Main Characteristics
t
PRSM
1.0
10
Ta = 25°Cnonrepetitive
Fig.3 Surge Reverse Power Ratings
Time t (s)
102
103
104
10-2 10-1 1.010-5 10-4 10-3
No
nre
pe
titive
Su
rge
Re
ve
rse
s P
ow
er
P
RS
M (
W)
250
200
150
100
50
200150100500
0
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n P
d (
mW
)
Polyimide board
3.0
0.8
1.5
20hx15wx0.8t
1.5
unit: mm
0 2 10864
10-5
10-4
10-3
10-2
10-6
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t I Z
(
A)
HZU6.8Z
382
1.0
10
102
103
104
10 102 10310-2 10-1 1.0
Fig.4 Transient Thermal Impedance
Time t (s)
Tra
nsie
nt
Th
erm
al Im
pe
da
nce
Z
th
(°C
/W)
383
HZM6.2ZMWA Silicon Planar Zener Diode for Surge Absorb
Features • HZM6.2ZMWA has two devices in a monolithic, and can absorb surge. • Low capacitance (C = 8.5 pF max) and can protect ESD of signal line.
Ordering Information and Pin Arrangement
2 1
62N
(Top view)
3HZM6.2ZMWATR, HZM6.2ZMWATL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
1. Cathode
2. Cathode
3. Anode(Top View)
2 1
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd *1 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Two device total, See Fig.2.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 5.90 — 6.50 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 3 µA VR = 5.5 V Capacitance C — — 8.5 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 60 Ω IZ = 5 mA ESD-Capability *2 — 13 — — kV C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse Notes: 1. Per one device 2. Failure criterion ; IR > 3 µA at VR = 5.5 V.
HZM6.2ZMWA
384
Main Characteristics
t Ta = 25°Cnonrepetitive
Fig.3 Surge Reverse Power Ratings
Time t (s)
1.0
10
No
nre
pe
titive
Su
rge
Re
ve
rse
s P
ow
er
P
RS
M (
W)
102
103
104
10–2 10–1 1.010–5 10–4 10–3
PRSM
0 2 10864
250
200
150
100
50
200150100500
0
1.0mm
0.8
mm
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Pow
er
Dis
sip
ation P
d (
mW
)
Printed circuit board25 62 1.6t mmMaterial: Glass Epoxy Resin+Cu Foil
× ×
Cu Foil
10–5
10–6
10–4
10–3
10–2
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Zener
Curr
ent I Z
(
A)
HZM6.2ZMWA
385
1.0
10
102
103
104
10 102 10310–2 10–1 1.0
Time t (s)
Tra
nsie
nt
Th
erm
al Im
pe
da
nce
Z
th
(°C
/W)
Fig.4 Transient Thermal Impedance *
Note: Measurement value by forward bias.
386
HZM6.2Z4MWA Silicon Planar Zener Diode for Surge Absorb
Features • HZM6.2Z4MWA has two devices in a monolithic, and can absorb surge. • Low capacitance (C = 4.0 pF Typ / 4.5 pF Max) and can protect ESD of signal line.
Ordering Information and Pin Arrangement
2 1
N1
(Top view)
3HZM6.2Z4MWATR, HZM6.2Z4MWATL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
1. Cathode
2. Cathode
3. Anode(Top View)
2 1
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: Two device total, See Fig.2.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 5.90 — 6.50 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 3 µA VR = 5.5 V Capacitance C — 4.0 4.5 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 60 Ω IZ = 5 mA ESD-Capability *2 — 8 — — kV C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse Notes: 1. Per one device. 2. Failure criterion ; IR > 3 µA at VR = 5.5 V.
HZM6.2Z4MWA
387
Main Characteristics
t Ta = 25°Cnonrepetitive
Fig.3 Surge Reverse Power Ratings
Time t (ms)
1.0
10
No
nre
pe
titive
Su
rge
Re
ve
rse
s P
ow
er
P
RS
M (
W)
102
103
104
10 102 10310–2 10–1 1.0
PRSM
0 2 10864
250
200
150
100
50
200150100500
0
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n P
d (
mW
)
10–5
10–6
10–4
10–3
10–2
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t I Z
(
A)
1.0mm
0.8
mm
Printed circuit board25 62 1.6t mmMaterial: Glass Epoxy Resin+Cu Foil
× ×
Cu Foil
388
HZM6.8ZMWA Silicon Planar Zener Diode for Surge Absorb
Features • HZM6.8ZMWA has two devices in a monolithic, and can absorb surge. • Low capacitance (C = 25 pF max) and can protect ESD of signal line.
Ordering Information and Pin Arrangement
2 1
68N
(Top view)
3HZM6.8ZMWATR, HZM6.8ZMWATL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
1. Cathode
2. Cathode
3. Anode(Top View)
2 1
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: Two device total, See Fig.2.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.0 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — — 25 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *2 — 20 — — kV C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse Notes: 1. Per one device 2. Failure criterion ; IR > 2 µA at VR = 3.5 V.
HZM6.8ZMWA
389
Main Characteristics
t
PRSM
Ta = 25°Cnonrepetitive
Fig.3 Surge Reverse Power Ratings
Time t (s)
No
nre
pe
titive
Su
rge
Re
ve
rse
s P
ow
er
P
RS
M (
W)
1.01.0
10
102
103
104
10-2 10-110-4 10-310-5
0 2 10864 200150500
250
200
150
100
50
1000
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n P
d (
mW
)
1.0mm
0.8
mm
Printed circuit board25 62 1.6t mmMaterial: Glass Epoxy Resin+Cu Foil
× ×
Cu Foil
10-5
10-6
10-4
10-3
10-2
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t I Z
(
A)
HZM6.8ZMWA
390
1.0
10
101.0 102 10310-2 10-1
102
103
104
Fig.4 Transient Thermal Impedance
Time t (s)
Tra
nsie
nt
Th
erm
al Im
pe
da
nce
Z
th
(°C
/W)
391
HZM6.8Z4MWA Silicon Planar Zener Diode for Surge Absorb
Features • HZM6.8Z4MWA has two devices in a monolithic, and can absorb surge. • Low capacitance (C = 4.0 pF Typ / 4.5 pF max) and can protect ESD of signal line.
Ordering Information and Pin Arrangement
2 1
N2
(Top view)
3HZM6.8Z4MWATR, HZM6.8Z4MWATL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
1. Cathode
2. Cathode
3. Anode(Top View)
2 1
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: two device total, See Fig.2.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — 4.0 4.5 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *2 — 8 — — kV C = 150 pF, R = 330 Ω, Both forward and
reverse direction 10 pulse Notes: 1. Per one device. 2. Failure criterion ; IR > 2 µA at VR = 3.5 V.
HZM6.8Z4MWA
392
Main Characteristics
t
PRSM
Ta = 25°Cnonrepetitive
Fig.3 Surge Reverse Power Ratings
Time t (ms)
No
nre
pe
titive
Su
rge
Re
ve
rse
s P
ow
er
P
RS
M (
W)
1031.0
10
10 10210–1 1.010–2
102
103
104
0 2 10864
250
200
150
100
50
200150100500
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n P
d (
mW
)0
10–5
10–6
10–4
10–3
10–2
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t I Z
(
A)
1.0mm
0.8
mm
Printed circuit board25 62 1.6t mmMaterial: Glass Epoxy Resin+Cu Foil
× ×
Cu Foil
393
HZM6.8MWA Silicon Planar Zener Diode for Surge Absorb
Features • HZM6.8MWA has two devices in a monolithic, and can absorb surge.
Ordering Information and Pin Arrangement
2 1
68M
(Top view)
3HZM6.8MWATR, HZM6.8MWATL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
1. Cathode
2. Cathode
3. Anode(Top View)
2 1
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd *1 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Two device total, See Fig.2.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.0 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — — 130 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *2, *3 — 30 — — kV C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse Notes: 1. Per one device 2. Failure criterion ; IR > 2 µA at VR = 3.5 V.
HZM6.8MWA
394
Main Characteristics
0 1 2 3 4 5 6 7
10-5
10-6
10-4
10-7
10-3
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t
I Z (
A)
10-8
10-9
10-10
10-2
250
200
150
100
50
200150100500
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n
Pd
(
mW
)
0
1.0mm
0.8
mm
Printed circuit board25 × 62 × 1.6t mmMaterial: Glass Epoxy Resin+Cu Foil
Cu Foil
8
Ta=75°C
Ta=-25°CTa=25°C
395
HZM27WA Silicon Epitaxial Planar Zener Diode for Surge Absorb
Features • HZM27WA has two devices, and can absorb surge. • MPAK Package is suitable for high density surface mounting.
Ordering Information and Pin Arrangement
2 1
27A
(Top view)
3HZM27WATR, HZM27WATL
Package Name : MPAK
Package Code: PLSP0003ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
1. Cathode
2. Cathode
3. Anode(Top View)
2 1
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: Two device total, See Fig.2.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 25.10 — 28.90 V IZ = 2 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 21 V Capacitance C — (27) *2 — pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 70 Ω IZ = 2 mA ESD-Capability *3 — 30 — — kV C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse Notes: 1. Per one device. 2. Reference only. 3. Failure criterion ; IR > 2 µA at VR = 21 V
HZM27WA
396
Main Characteristics
250
200
150
100
50
200150100500
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n
Pd
(
mW
)0
1.0mm
0.8
mm
Printed circuit board25 62 1.6t mmMaterial: Glass Epoxy Resin+Cu Foil
× ×
Cu Foil
Fig.1 Zener Current vs. Zener Voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t
I Z (
mA
)
0 5 10 15 20 25 30 35 40
10
8
6
4
2
0
Fig.3 Surge Reverse Power Ratings
Time t (s)
No
nre
pe
titive
Su
rge
Re
ve
rse
s P
ow
er
P
RS
M (
W)
Ta = 25°Cnonrepetitive
t
PRSM
10-2 10-1 1.010-5 10-41.0
10
102
103
104
10-3
HZM27WA
397
Fig.4 Transient Thermal Impedance
Time t (s)
1.0
10
102
103
104
Tra
nsie
nt
Th
erm
al Im
pe
da
nce
Z
th
(°C
/W)
10 102 10310-2 10-1 1.0
398
HZM6.2ZMFA Silicon Planar Zener Diode for Surge Absorb
Features • HZM6.2ZMFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 8.5 pF max) and can protect ESD of signal line.
Ordering Information and Pin Arrangement
1. Cathode
2. Cathode
3. Cathode
4. Anode
5. Cathode(Top View)
1 2
5 4 3
(Top View)
1 2
5 4 3
62N
HZM6.2ZMFATR, HZM6.2ZMFATL
Package Name : MPAK-5
Package Code: PLSP0005ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: Four device total, See Fig.2.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 5.90 — 6.50 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 3 µA VR = 5.5 V Capacitance C — — 8.5 pF VR =0 V, f = 1 MHz Dynamic resistance rd — — 60 Ω IZ = 5 mA ESD-Capability *2 — 13 — — kV C = 150 pF, R = 330 Ω , Both forward
and reverse direction 10 pulse. Notes: 1. Per one device 2. Failure criterion ; IR > 3 µA at VR = 5.5 V.
HZM6.2ZMFA
399
Main Characteristics
t Ta = 25°Cnonrepetitive
Fig.3 Surge Reverse Power Ratings
Time t (s)
1.0
10
No
nre
pe
titive
Su
rge
Re
ve
rse
s P
ow
er
P
RS
M (
W)
102
103
104
10–2 10–1 1.010–5 10–4 10–3
PRSM
0 2 10864
250
200
150
100
50
200150100500
0
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n P
d (
mW
)
1.0mm
0.6
mm
Printed circuit board25 62 1.6t mmMaterial: Glass Epoxy Resin+Cu Foil
× ×
Cu Foil
10–5
10–6
10–4
10–3
10–2
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t I Z
(
A)
HZM6.2ZMFA
400
1.0
10
102
103
104
10 102 10310–2 10–1 1.0
Fig.4 Transient Thermal Impedance *
Time t (s)
Tra
nsie
nt
Th
erm
al Im
pe
da
nce
Z
th
(°C
/W)
Note: Measurement value by forward bias.
401
HZM6.2Z4MFA Silicon Planar Zener Diode for Surge Absorb
Features • HZM6.2Z4MFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 4.0 pF Typ / 4.5 pF max) and can protect ESD of signal line.
Ordering Information and Pin Arrangement
1. Cathode
2. Cathode
3. Cathode
4. Anode
5. Cathode
1 2
5 4 3
(Top View)
1 2
5 4 3
(Top View)
N1
HZM6.2Z4MFATR, HZM6.2Z4MFATL
Package Name : MPAK-5
Package Code: PLSP0005ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: Four device total, See Fig.2.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 5.90 — 6.50 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 3 µA VR = 5.5 V Capacitance C — 4.0 4.5 pF VR =0 V, f = 1 MHz Dynamic resistance rd — — 60 Ω IZ = 5 mA ESD-Capability *2 — 8 — — kV C = 150 pF, R = 330 Ω , Both forward
and reverse direction 10 pulse. Notes: 1. Per one device 2. Failure criterion ; IR > 3 µA at VR = 5.5 V.
HZM6.2Z4MFA
402
Main Characteristics
t Ta = 25°Cnonrepetitive
Fig.3 Surge Reverse Power Ratings
Time t (s)
1.0
10
No
nre
pe
titive
Su
rge
Re
ve
rse
s P
ow
er
P
RS
M (
W)
102
103
104
10 102 10310–2 10–1 1.0
PRSM
0 2 10864
250
200
150
100
50
200150100500
0
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n P
d (
mW
)
1.0mm
0.6
mm
Printed circuit board25 62 1.6t mmMaterial: Glass Epoxy Resin+Cu Foil
× ×
Cu Foil
10–5
10–6
10–4
10–3
10–2
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t I Z
(
A)
403
HZM6.8MFA Silicon Planar Zener Diode for Surge Absorb
Features • HZM6.8MFA has four devices in a monolithic, and can absorb surge.
Ordering Information and Pin Arrangement
1. Cathode
2. Cathode
3. Cathode
4. Anode
5. Cathode
1 2
5 4 3
(Top View)
1 2
5 4 3
(Top View)
68M
HZM6.8MFATR, HZM6.8MFATL
Package Name : MPAK-5
Package Code: PLSP0005ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: Four device total, See Fig.2.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — — 130 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *2 — 30 — — kV C = 150 pF, R = 330 Ω , Both forward
and reverse direction 10 pulse. Notes: 1. Per one device 2. Failure criterion ; IR > 2 µA at VR = 3.5 V.
HZM6.8MFA
404
Main Characteristics
0
250
200
150
100
50
200150100500
1.0mm
0.6
mm
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n
Pd
(
mW
)
Printed circuit board25 62 1.6t mmMaterial: Glass Epoxy Resin+Cu Foil
× ×
Cu Foil
0 1 2 3 4 5 6 7 8
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t
I Z (
A)
Ta=75°C
Ta=25°C
Ta=-25°C
10-5
10-6
10-4
10-7
10-3
10-8
10-9
10-2
10-1
405
HZM6.8ZMFA Silicon Planar Zener Diode for Surge Absorb
Features • HZM6.8ZMFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 25 pF max) and can protect ESD of signal line.
Ordering Information and Pin Arrangement
1. Cathode
2. Cathode
3. Cathode
4. Anode
5. Cathode
1 2
5 4 3
(Top View)
1 2
5 4 3
(Top View)
68N
HZM6.8ZMFATR, HZM6.8ZMFATL
Package Name : MPAK-5
Package Code: PLSP0005ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: Four device total, See Fig.2.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — — 25 pF VR =0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *2 — 25 — — kV C = 150 pF, R = 330 Ω , Both forward
and reverse direction 10 pulse. Notes: 1. Per one device 2. Failure criterion ; IR > 2 µA at VR = 3.5 V.
HZM6.8ZMFA
406
Main Characteristics
t
PRSM
Ta = 25°Cnonrepetitive
Fig.3 Surge Reverse Power Ratings
Time t (s)
No
nre
pe
titive
Su
rge
Re
ve
rse
s P
ow
er
P
RS
M (
W)
1.01.0
10
10-2 10-110-4 10-310-5
102
103
104
0 2 10864
250
200
150
100
50
200150100500
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n P
d (
mW
)0
Printed circuit board25 62 1.6t mmMaterial: Glass Epoxy Resin+Cu Foil
× ×
Cu Foil
1.0mm
0.6
mm
10-5
10-6
10-4
10-3
10-2
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t I Z
(
A)
HZM6.8ZMFA
407
1.0
10
101.0
102
103
104
10-2 10-1 102 103
Fig.4 Transient Thermal Impedance
Time t (s)
Tra
nsie
nt
Th
erm
al Im
pe
da
nce
Z
th
(°C
/W)
408
HZM6.8Z4MFA Silicon Planar Zener Diode for Surge Absorb
Features • HZM6.8Z4MFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 4.0 pF Typ / 4.5 pF max) and can protect ESD of signal line.
Ordering Information and Pin Arrangement
1. Cathode
2. Cathode
3. Cathode
4. Anode
5. Cathode
1 2
5 4 3
(Top View)
1 2
5 4 3
(Top View)
N2
HZM6.8Z4MFATR, HZM6.8Z4MFATL
Package Name : MPAK-5
Package Code: PLSP0005ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: Four device total, See Fig.2.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — 4.0 4.5 pF VR =0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *2 — 8 — — kV C = 150 pF, R = 330 Ω , Both forward
and reverse direction 10 pulse. Notes: 1. Per one device 2. Failure criterion ; IR > 2 µA at VR = 3.5 V.
HZM6.8Z4MFA
409
Main Characteristics
t
PRSM
Ta = 25°Cnonrepetitive
Fig.3 Surge Reverse Power Ratings
Time t (s)
No
nre
pe
titive
Su
rge
Re
ve
rse
s P
ow
er
P
RS
M (
W)
1031.0
10
10 10210–1 1.010–2
102
103
104
0 2 10864
250
200
150
100
50
200150100500
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n P
d (
mW
)0
Printed circuit board25 62 1.6t mmMaterial: Glass Epoxy Resin+Cu Foil
× ×
Cu Foil
1.0mm
0.6
mm
10–5
10–6
10–4
10–3
10–2
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t I Z
(
A)
410
HZM27FA Silicon Epitaxial Planar Zener Diode for Surge Absorb
Features • HZM27FA has four devices, and can absorb surge.
Ordering Information and Pin Arrangement
1. Cathode
2. Cathode
3. Cathode
4. Anode
5. Cathode
1 2
5 4 3
(Top View)
1 2
5 4 3
(Top View)
27A
HZM27FATR, HZM27FATL
Package Name : MPAK-5
Package Code: PLSP0005ZC-A
Taping Abbreviation (Quantity)
TR(3,000 pcs / reel)
TL(3,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: Four device total, See Fig.2.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 25.10 — 28.90 V IZ = 2 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 21 V Capacitance C — (27) *2 — pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 70 Ω IZ = 2 mA ESD-Capability *3 — 30 — — kV C = 150 pF, R = 330 Ω , Both forward
and reverse direction 10 pulse. Notes: 1. Per one device 2. Reference only 3. Failure criterion ; IR > 2 µA at VR = 21 V
HZM27FA
411
Main Characteristics
0
10-6
10-7
10-5
10-8
10-4
10-9
10-10
10-11
10-3
200
10 20 305 2515
0
250
200
150
100
50
150100500
1.0mm
0.6
mm
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n
Pd
(
mW
)
Printed circuit board25 62 1.6t mmMaterial: Glass Epoxy Resin+Cu Foil
× ×
Cu Foil
Fig.1 Zener current vs. Zener voltage
Zener Voltage Vz (V)
Ze
ne
r C
urr
en
t
I Z (
A)
412
RKZ6.2Z4MFAKT Silicon Planar Zener Diode for Surge Absorption
Features • RKZ6.2Z4MFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 4.0 pF Typ) and can protect ESD of signal line.
Ordering Information and Pin Arrangement
1. Cathode
2. Cathode
3. Cathode
4. Anode
5. Cathode
1 2
5 4 3
(Top View)
1 2
5 4 3
N4 ∗
(Top View)
(Month code)
RKZ6.2Z4MFAKTP, RKZ6.2Z4MFAKTH
Package Name : VSON-5
Package Code: PUSN0005KB-A
Taping Abbreviation (Quantity)
P(3,000 pcs / reel)
H(3,000 pcs / reel)
Month Code Assemble Assemble
Month of Manufacture JAPAN MALAYSIA Month of Manufacture JAPAN MALAYSIAJanuary A 1 July G 7 February B 2 August H 8 March C 3 September J 9 April D 4 October K W May E 5 November L X June F 6 December M Y
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: Four device total, See Fig.2.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 5.90 — 6.50 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 3 µA VR = 5.5 V Capacitance C — 4.0 4.5 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 60 Ω IZ = 5 mA ESD-Capability *2, *3 — 8 — — kV C = 150 pF, R = 330 Ω, Both forward and
reverse direction 10 pulse Notes: 1. Per one device. 2. Failure criterion ; IR > 3 µA at VR = 5.5 V. 3. Between cathode and anode.
RKZ6.2Z4MFAKT
413
Main Characteristics
10 102 10310–2 10–11.0
10
102
103
104
1.0
250
200
150
100
50
200150100500
0
3.0
0.3
2.4
5
3.8
1.75
1.01.5
With polyimide board
20h × 15w × 0.8tUnit: mm
Zener
Curr
ent I Z
(
A)
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)P
ow
er
Dis
sip
ation P
d (
mW
)
Ta = 25°Cnonrepetitive
t
PRSM
Fig.3 Surge Reverse Power Ratings
Time t (ms)
Nonre
petitive S
urg
e R
evers
es P
ow
er
P
RS
M (
W)
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
0 82 4 6
10-6
10-7
10-8
10-9
10-10
10-11
10-2
10-3
10-4
10-5
414
RKZ6.8ZMFAKT Silicon Planar Zener Diode for Surge Absorption
Features • RKZ6.8ZMFAKT has four devices in a monolithic, and can absorb surge.
Ordering Information and Pin Arrangement
1. Cathode
2. Cathode
3. Cathode
4. Anode
5. Cathode
1 2
5 4 3
(Top View)
1 2
5 4 3
N3 ∗
(Top View)
(Month code)
RKZ6.8ZMFAKTP, RKZ6.8ZMFAKTH
Package Name : VSON-5
Package Code: PUSN0005KB-A
Taping Abbreviation (Quantity)
P(3,000 pcs / reel)
H(3,000 pcs / reel)
Month Code Assemble Assemble
Month of Manufacture JAPAN MALAYSIA Month of Manufacture JAPAN MALAYSIAJanuary A 1 July G 7 February B 2 August H 8 March C 3 September J 9 April D 4 October K W May E 5 November L X June F 6 December M Y
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: Four device total, See Fig.2.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 0.5 µA VR = 3.5 V Capacitance C — — 25 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *2, *3 — 25 — — kV C = 150 pF, R = 330 Ω, Both forward and
reverse direction 10 pulse Notes: 1. Per one device. 2. Failure criterion ; IR > 0.5 µA at VR = 3.5 V. 3. Between cathode and anode.
RKZ6.8ZMFAKT
415
Main Characteristics
10–2 10–1 1.010–5 10–41.0
10
102
103
104
10–3
250
200
150
100
50
200150100500
0
3.0
0.3
2.4
5
3.8
1.75
1.01.5
With polyimide board
20h × 15w × 0.8tUnit: mm
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)P
ow
er
Dis
sip
atio
n P
d (
mW
)
Ta = 25°Cnonrepetitive
t
PRSM
Fig.3 Surge Reverse Power Ratings
Time t (s)
No
nre
pe
titive
Su
rge
Re
ve
rse
s P
ow
er
P
RS
M (
W)
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
10-6
10-7
10-8
10-9
10-10
10-11
10-2
10-3
10-4
10-5
Ze
ne
r C
urr
en
t I Z
(
A)
0 72 4 61 3 5
RKZ6.8ZMFAKT
416
1.0
10
102
103
104
10 102 10310–2 10–1 1.0
Fig.4 Transient Thermal Impedance
Time t (s)
Tra
nsie
nt T
he
rma
l Im
pe
da
nce
Z
th (
°C/W
)
417
RKZ6.8Z4MFAKT Silicon Planar Zener Diode for Surge Absorption
Features • RKZ6.8Z4MFAKT has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 4.0 pF Typ) and can protect ESD of signal line.
Ordering Information and Pin Arrangement
1. Cathode
2. Cathode
3. Cathode
4. Anode
5. Cathode
1 2
5 4 3
(Top View)
1 2
5 4 3
N5 ∗
(Top View)
(Month code)
RKZ6.8Z4MFAKTP, RKZ6.8Z4MFAKTH
Package Name : VSON-5
Package Code: PUSN0005KB-A
Taping Abbreviation (Quantity)
P(3,000 pcs / reel)
H(3,000 pcs / reel)
Month Code Assemble Assemble
Month of Manufacture JAPAN MALAYSIA Month of Manufacture JAPAN MALAYSIAJanuary A 1 July G 7 February B 2 August H 8 March C 3 September J 9 April D 4 October K W May E 5 November L X June F 6 December M Y
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: Four device total, See Fig.2.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 2 µA VR = 3.5 V Capacitance C — 4.0 4.5 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability *2, *3 — 8 — — kV C = 150 pF, R = 330 Ω, Both forward and
reverse direction 10 pulse Notes: 1. Per one device. 2. Failure criterion ; IR > 2 µA at VR = 3.5 V. 3. Between cathode and anode.
RKZ6.8Z4MFAKT
418
Main Characteristics
10 102 10310–2 10–11.0
10
102
103
104
1.0
250
200
150
100
50
200150100500
0
3.0
0.3
2.4
5
3.8
1.75
1.01.5
With polyimide board
20h × 15w × 0.8tUnit: mm
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)P
ow
er
Dis
sip
ation P
d (
mW
)
Ta = 25°Cnonrepetitive
t
PRSM
Fig.3 Surge Reverse Power Ratings
Time t (ms)
Nonre
petitive S
urg
e R
evers
es P
ow
er
P
RS
M (
W)
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
10-6
10-7
10-8
10-9
10-10
10-11
10-2
10-3
10-4
10-5
Zener
Curr
ent I Z
(
A)
0 72 4 61 3 5
419
RKZ6.8TKK, RKZ6.8TKJ Silicon Planar Zener Diode for Bidirectional Surge Absorption
Features • This product is for a two-way zener diode so its possible to use for bidirectional surge absorption. • Surge absorption for electronic devices such as LED-equipped devices.
Ordering Information and Pin Arrangement
1 2
Cathode mark
Mark
1. Cathode
2. Anode
N3
1 2
(Top View)
RKZ6.8TKJR
Package Name : UFP
Package Code: PWSF0002ZA-A
Taping Abbreviation (Quantity)
R(8,000 pcs / reel)
1 2
Cathode mark
Mark
1. Cathode
2. Anode
N3
1 2
(Top View)
RKZ6.8TKKR
Package Name : SFP
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
R(8,000 pcs / reel)
Absolute Maximum Ratings *1 (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd *2 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Per one device 2. See Fig.2.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 5.80 — 7.80 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 0.5 µA VR = 3.5 V ESD-Capability *1 — 25 — — kV C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse Notes: 1. Failure criterion ; IR > 0.5 µA at VR = 3.5 V.( Both direction) 2. In the EFP and UFP package, some lead is exposed because the tip of the lead is used as the cutting plane.
Therefore, the solderability of the lead tip has been ignored. Please test and confirm before use.
RKZ6.8TKK, RKZ6.8TKJ
420
Main Characteristics
t Ta = 25°Cnonrepetitive
Fig.3 Surge Reverse Power Ratings
Time t (ms)
1.0
10
No
nre
pe
titive
Su
rge
Re
ve
rse
s P
ow
er
P
RS
M (
W)
102
103
104
PRSM
10 102 10310–2 10–1 1.0
0 2 10864
250
200
150
100
50
200150100500
0
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n P
d (
mW
)
Polyimide board
3.0
0.8
1.5
20h×15w×0.8t
1.5
unit: mm
10–5
10–6
10–4
10–3
10–2
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t I Z
(
A)
421
RKZ27TKG Silicon Epitaxial Planar Zener Diode for Bidirectional Surge Absorption
Features • 1 package with Bidirectional characteristic suppresses surges in both forward and reverse directions (positive and
negative surges). • High ESD resistance (guarantee of 30 kV , compliant with the IEC 61000-4-2 standard) • Suitable for protecting CAN/LIN-BUS lines. • Support for specifications of automobiles.
Ordering Information and Pin Arrangement
Cathode mark
Mark
N6
RKZ27TKGP
Package Name : URP
Package Code : PTSP0002ZA-A
Taping Abbreviation (Quantity)
P(3,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 26.2 — 31.5 V IZ = 1 mA, 40 ms pulse Reverse current IR — — 0.1 µA VR = 24 V Capacitance C — — 30 pF VR = 0 V, f = 1 MHz ESD-Capability *1 — 30 — — kV C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse Note: Failure criterion ; IR > 0.1 µA at VR = 24 V. (Both direction)
RKZ27TKG
422
Main Characteristics
250
200
150
100
50
200150100500
0
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Pow
er
Dis
sip
ation P
d (
mW
)
Polyimide board
3.0
0.8
1.5
20h×15w×0.8t
1.5
unit: mm
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Zener
Curr
ent I Z
(
A)
0 5 30201510
10–5
10–6
10–3
10–2
2510-8
10-7
10-4
423
RKZ27TWAQE Silicon Epitaxial Planar Zener Diode for Bidirectional Surge Absorption
Features • 2 lines with bidirectional characteristic in 1 package suppresses surges in both forward and reverse directions
(positive and negative surges). • High ESD resistance (guarantee of 30 kV , compliant with the IEC 61000-4-2 standard) • Suitable for protecting CAN-BUS lines. • Support for specifications of automobiles.
Ordering Information and Pin Arrangement
N6
(Top View)
Mark
2 1
3
2 1
3RKZ27TWAQEH
Package Name : CMPAK
Package Code : PTSP0003ZB-A
Taping Abbreviation (Quantity)
H(3,000 pcs / reel)
Absolute Maximum Ratings *1 (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1 package total, See Fig.2.
Electrical Characteristics *1 (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 26.2 — 31.5 V IZ = 1 mA, 40 ms pulse Reverse current IR — — 0.1 µA VR = 24 V Capacitance C — — 30 pF VR = 0 V, f = 1 MHz ESD-Capability *2 — 30 — — kV C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse Notes: 1. Per one device 2. Failure criterion ; IR > 0.1 µA at VR = 24 V. (Both direction)
RKZ27TWAQE
424
Main Characteristics
250
200
150
100
50
200150100500
0
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Pow
er
Dis
sip
ation P
d (
mW
)
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Zener
Curr
ent I Z
(
A)
Printed circuit board
Material: Glass Epoxy Resin+Cu Foil
Cu Foil
1.0mm
0.8
mm
25 × 62 × 1.6t mm
0 5 30201510
10–5
10–6
10–3
10–2
2510-8
10-7
10-4
425
HZ Series Silicon Planar Zener Diode for Stabilized Power Supply
Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized
power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.
Ordering Information and Pin Arrangement
Cathode band (Navy Blue)
1. Cathode
2. Anode
HZ Series
Package Name : DO-35Package Code : GRZZ0002ZB-A
Taping Abbreviation (Quantity)
TA (5,000 pcs / reel)
7B 2
Part No.
1 2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd 500 mW Junction temperature Tj 175 °C Storage temperature Tstg –55 to +175 °C
HZ Series
426
Electrical Characteristics (Ta = 25°C)
Zener Voltage Reverse Current Dynamic Resistance
VZ (V)*1 Test
Condition IR (μA) Test
Condition rd (Ω) Test
Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)
A1 1.6 1.8 A2 1.7 1.9 A3 1.8 2.0
5 25 0.5 100 5
B1 1.9 2.1 B2 2.0 2.2 B3 2.1 2.3 C1 2.2 2.4 C2 2.3 2.5
HZ2
C3 2.4 2.6
5 5 0.5 100 5
A1 2.5 2.7 A2 2.6 2.8 A3 2.7 2.9 B1 2.8 3.0 B2 2.9 3.1 B3 3.0 3.2 C1 3.1 3.3 C2 3.2 3.4
HZ3
C3 3.3 3.5
5 5 0.5 100 5
A1 3.4 3.6 A2 3.5 3.7 A3 3.6 3.8 B1 3.7 3.9 B2 3.8 4.0 B3 3.9 4.1 C1 4.0 4.2 C2 4.1 4.3
HZ4
C3 4.2 4.4
5 5 1.0 100 5
A1 4.3 4.5 A2 4.4 4.6 A3 4.5 4.7 B1 4.6 4.8 B2 4.7 4.9 B3 4.8 5.0 C1 4.9 5.1 C2 5.0 5.2
HZ5
C3 5.1 5.3
5 5 1.5 100 5
A1 5.2 5.5 A2 5.3 5.6 A3 5.4 5.7 B1 5.5 5.8 B2 5.6 5.9 B3 5.7 6.0 C1 5.8 6.1 C2 6.0 6.3
HZ6
C3 6.1 6.4
5 5 2.0 40 5
Note: 1. Tested with DC.
HZ Series
427
(Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance
VZ (V)*1 Test
Condition IR (μA) Test
Condition rd (Ω) Test
Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)
A1 6.3 6.6 A2 6.4 6.7 A3 6.6 6.9 B1 6.7 7.0 B2 6.9 7.2 B3 7.0 7.3 C1 7.2 7.6 C2 7.3 7.7
HZ7
C3 7.5 7.9
5 1 3.5 15 5
A1 7.7 8.1 A2 7.9 8.3 A3 8.1 8.5 B1 8.3 8.7 B2 8.5 8.9 B3 8.7 9.1 C1 8.9 9.3 C2 9.1 9.5
HZ9
C3 9.3 9.7
5 1 5.0 20 5
A1 9.5 9.9 A2 9.7 10.1 A3 9.9 10.3 B1 10.2 10.6 B2 10.4 10.8 B3 10.7 11.1 C1 10.9 11.3 C2 11.1 11.6
HZ11
C3 11.4 11.9
5 1 7.5 25 5
A1 11.6 12.1 A2 11.9 12.4 A3 12.2 12.7 B1 12.4 12.9 B2 12.6 13.1 B3 12.9 13.4 C1 13.2 13.7 C2 13.5 14.0
HZ12
C3 13.8 14.3
5 1 9.5 35 5
-1 14.1 14.7 -2 14.5 15.1
HZ15
-3 14.9 15.5
5 1 11.0 40 5
-1 15.3 15.9 -2 15.7 16.5
HZ16
-3 16.3 17.1
5 1 12.0 45 5
-1 16.9 17.7 -2 17.5 18.3
HZ18
-3 18.1 19.0
5 1 13.0 55 5
Note: 1. Tested with DC.
HZ Series
428
(Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance
VZ (V)*1 Test
Condition IR (μA) Test
Condition rd (Ω) Test
Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)
-1 18.8 19.7 -2 19.5 20.4
HZ20
-3 20.2 21.1
2 1 15.0 60 2
-1 20.9 21.9 -2 21.6 22.6
HZ22
-3 22.3 23.3
2 1 17.0 65 2
-1 22.9 24.0 -2 23.6 24.7
HZ24
-3 24.3 25.5
2 1 19.0 70 2
-1 25.2 26.6 -2 26.2 27.6
HZ27
-3 27.2 28.6
2 1 21.0 80 2
-1 28.2 29.6 -2 29.2 30.6
HZ30
-3 30.2 31.6
2 1 23.0 100 2
-1 31.2 32.6 -2 32.2 33.6
HZ33
-3 33.2 34.6
2 1 25.0 120 2
-1 34.2 35.7 -2 35.3 36.8
HZ36
-3 36.4 38.0
2 1 27.0 140 2
Notes: 1. Tested with DC. 2. Type No. is as follows; HZ2B1, HZ2B2, HZ36-3.
HZ Series
429
Main Characteristics
0 5 10 15 20 25 30 35 40
50
40
30
20
10
0
mV/°C
500
400
300
200
100
200150100500
0
2.5 mm
3 mm
Printed circuit board
100 × 180 × 1.6t mm
Material: paper phenol
5 mm
Ze
ne
r C
urr
en
t I Z
(
A)
Fig.3 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n P
d (
mW
)
−10
−20
−30
−40
−50 Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t γ Z
(
mV
/°C
)
%/°C
0.10
0.08
0.06
0.04
0.02
−0.02
−0.04
−0.06
−0.08
−0.10Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t γ Z
(
%/°
C)
0
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage VZ (V)
5 15 25 30 35 40
10-2
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
10-3
10-4
10-5
10-6
10-7
10-8
0
HZ
2B
2
10 20
HZ
12
B2
HZ
9B
2
HZ
15
-2
HZ
7B
2
HZ
6B
2
HZ
5B
2H
Z4
B2
HZ
3B
2
HZ
11
B2
HZ
16
-2
HZ
18
-2
HZ
36
-2
HZ
33
-2
HZ
30
-2
HZ
27
-2
HZ
24
-2
HZ
22
-2
HZ
20
-2
430
HZS Series Silicon Planar Zener Diode for Stabilized Power Supply
Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. • Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information and Pin Arrangement
1. Cathode
2. Anode
HZS Series
Package Name : MHDPackage Code : GRZZ0002ZC-A
Taping Abbreviation (Quantity)
TA (5,000 pcs / reel) Part No.
1 2
B
27
Cathode band (Lake Blue)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd 400 mW Junction temperature Tj 200 °C Storage temperature Tstg –55 to +175 °C
HZS Series
431
Electrical Characteristics (Ta = 25°C)
Zener Voltage Reverse Current Dynamic Resistance
VZ (V)*1 Test
Condition IR (μA) Test
Condition rd (Ω) Test
Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)
A1 1.6 1.8 A2 1.7 1.9 A3 1.8 2.0
5 25 0.5 100 5
B1 1.9 2.1 B2 2.0 2.2 B3 2.1 2.3 C1 2.2 2.4 C2 2.3 2.5
HZS2
C3 2.4 2.6
5 5 0.5 100 5
A1 2.5 2.7 A2 2.6 2.8 A3 2.7 2.9 B1 2.8 3.0 B2 2.9 3.1 B3 3.0 3.2 C1 3.1 3.3 C2 3.2 3.4
HZS3
C3 3.3 3.5
5 5 0.5 100 5
A1 3.4 3.6 A2 3.5 3.7 A3 3.6 3.8 B1 3.7 3.9 B2 3.8 4.0 B3 3.9 4.1 C1 4.0 4.2 C2 4.1 4.3
HZS4
C3 4.2 4.4
5 5 1.0 100 5
A1 4.3 4.5 A2 4.4 4.6 A3 4.5 4.7 B1 4.6 4.8 B2 4.7 4.9 B3 4.8 5.0 C1 4.9 5.1 C2 5.0 5.2
HZS5
C3 5.1 5.3
5 5 1.5 100 5
A1 5.2 5.5 A2 5.3 5.6 A3 5.4 5.7 B1 5.5 5.8 B2 5.6 5.9 B3 5.7 6.0 C1 5.8 6.1 C2 6.0 6.3
HZS6
C3 6.1 6.4
5 5 2.0 40 5
Note: 1. Tested with DC.
HZS Series
432
(Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance
VZ (V)*1 Test
Condition IR (μA) Test
Condition rd (Ω) Test
Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)
A1 6.3 6.6 A2 6.4 6.7 A3 6.6 6.9 B1 6.7 7.0 B2 6.9 7.2 B3 7.0 7.3 C1 7.2 7.6 C2 7.3 7.7
HZS7
C3 7.5 7.9
5 1 3.5 15 5
A1 7.7 8.1 A2 7.9 8.3 A3 8.1 8.5 B1 8.3 8.7 B2 8.5 8.9 B3 8.7 9.1 C1 8.9 9.3 C2 9.1 9.5
HZS9
C3 9.3 9.7
5 1 5.0 20 5
A1 9.5 9.9 A2 9.7 10.1 A3 9.9 10.3 B1 10.2 10.6 B2 10.4 10.8 B3 10.7 11.1 C1 10.9 11.3 C2 11.1 11.6
HZS11
C3 11.4 11.9
5 1 7.5 25 5
A1 11.6 12.1 A2 11.9 12.4 A3 12.2 12.7 B1 12.4 12.9 B2 12.6 13.1 B3 12.9 13.4 C1 13.2 13.7 C2 13.5 14.0
HZS12
C3 13.8 14.3
5 1 9.5 35 5
-1 14.1 14.7 -2 14.5 15.1
HZS15
-3 14.9 15.5
5 1 11.0 40 5
-1 15.3 15.9 -2 15.7 16.5
HZS16
-3 16.3 17.1
5 1 12.0 45 5
-1 16.9 17.7 -2 17.5 18.3
HZS18
-3 18.1 19.0
5 1 13.0 55 5
Note: 1. Tested with DC.
HZS Series
433
(Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance
VZ (V)*1 Test
Condition IR (μA) Test
Condition rd (Ω) Test
Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)
-1 18.8 19.7 -2 19.5 20.4
HZS20
-3 20.2 21.1
2 1 15.0 60 2
-1 20.9 21.9 -2 21.6 22.6
HZS22
-3 22.3 23.3
2 1 17.0 65 2
-1 22.9 24.0 -2 23.6 24.7
HZS24
-3 24.3 25.5
2 1 19.0 70 2
-1 25.2 26.6 -2 26.2 27.6
HZS27
-3 27.2 28.6
2 1 21.0 80 2
-1 28.2 29.6 -2 29.2 30.6
HZS30
-3 30.2 31.6
2 1 23.0 100 2
-1 31.2 32.6 -2 32.2 33.6
HZS33
-3 33.2 34.6
2 1 25.0 120 2
-1 34.2 35.7 -2 35.3 36.8
HZS36
-3 36.4 38.0
2 1 27.0 140 2
Notes: 1. Tested with DC. 2. Type No. is as follows; HZS2B1, HZS2B2, HZS36-3.
HZS Series
434
Main Characteristics
5 10 15 20 25 30 35 400
HZ
S2
B2
HZ
S9
B2
HZ
S1
2B
2
HZ
S1
6-2
HZ
S4B
2H
ZS
6B
2
HZ
S2
0-2
HZ
S2
4-2
HZ
S3
0-2
HZ
S3
6-2
500
400
300
200
100
200150100500
0
2.5 mm
3 mm
Printed circuit board
100 180 1.6t mm
Material: paper phenol
× ×
l
l = 5 mm
l = 10 mm(Publication value)
Ze
ne
r C
urr
en
t I Z
(
A)
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
10–5
10–6
10–4
10–3
10–2
10–7
10–8
Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t γ Z
(
mV
/°C
)
Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t γ Z
(
%/°
C)
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage VZ (V)
Fig.3 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n P
d (
mW
)
0 5 10 15 20 25 30 35 40
50
40
30
20
10
0
mV/°C
−10
−20
−30
−40
−50
%/°C
0.10
0.08
0.06
0.04
0.02
−0.02
−0.04
−0.06
−0.08
−0.10
0
435
HZK Series Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply
Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW. • Wide spectrum from 1.9V through 38V of zener voltage provide flexible application.
Ordering Information and Pin Arrangement
1. Cathode
2. Anode
1 2
Cathode band
3rd. band2nd. band
1 2
Cathode band
3rd. band2nd. band
HZK Series
Package Name : LLDPackage Code : GLZZ0002ZA-A
Taping Abbreviation (Quantity)
TR(2,500 pcs / reel)
TL(2,500 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 500 mW Junction temperature Tj 175 °C Storage temperature Tstg –55 to +175 °C Note: With P.C. Board.
HZK Series
436
Electrical Characteristics (Ta = 25°C)
Zener Voltage Reverse Current Dynamic Resistance
VZ (V)*1 Test
Condition IR (µA) Test
Condition rd (Ω) Test
Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)
B 1.9 2.3 HZK2 C 2.2 2.6
5 5 0.5 100 5
A 2.5 2.9 B 2.8 3.2
HZK3
C 31 3.5
5 5 0.5 100 5
A 3.4 3.8 B 3.7 4.1
HZK4
C 4.0 4.4
5 5 1.0 100 5
A 4.3 4.7 B 4.6 5.0
HZK5
C 4.9 5.3
5 5 1.5 100 5
A 5.2 5.7 B 5.5 6.0
HZK6
C 5.8 6.4
5 5 2 40 5
A 6.3 6.9 B 6.7 7.3
HZK7
C 7.2 7.9
5 1 3.5 15 5
A 7.7 8.5 B 8.3 9.1
HZK9
C 8.9 9.7
5 1 5 20 5
A 9.5 10.3 B 10.2 11.1
HZK11
C 10.9 11.9
5 1 7.5 25 5
A 11.6 12.7 B 12.4 13.4
HZK12
C 13.2 14.3
5 1 9.5 35 5
HZK15 14.1 15.5 5 1 11 40 5 HZK16 15.3 17.1 5 1 12 45 5 HZK18 16.9 19.0 5 1 13 55 5 HZK20 18.8 21.1 2 1 15 60 2 HZK22 20.9 23.3 2 1 17 65 2 HZK24 22.9 25.5 2 1 19 70 2 HZK27 25.2 28.6 2 1 21 80 2 HZK30 28.2 31.6 2 1 23 100 2 HZK33 31.2 34.6 2 1 25 120 2 HZK36 34.2 38.0 2 1 27 140 2 Note: Tested with DC. Type No. is as follows: HZK2B, HZK2C, ••• HZK36.
HZK Series
437
Mark Color Code Type Cathode Band Second Band Third Band
HZK2B Yellow Green Yellow Ocher Verdure HZK2C Yellow Green Yellow Ocher Light Blue HZK3A Yellow Green Pink Pink HZK3B Yellow Green Pink Verdure HZK3C Yellow Green Pink Light Blue HZK4A Yellow Green Orange Pink HZK4B Yellow Green Orange Verdure HZK4C Yellow Green Orange Light Blue HZK5A Yellow Green Yellow Pink HZK5B Yellow Green Yellow Verdure HZK5C Yellow Green Yellow Light Blue HZK6A Yellow Green Verdure Pink HZK6B Yellow Green Verdure Verdure HZK6C Yellow Verdure Verdure Light Blue HZK7A Yellow Green Yellow Green Pink HZK7B Yellow Green Yellow Green Verdure HZK7C Yellow Green Yellow Green Light Blue HZK9A Yellow Green Purple Pink HZK9B Yellow Green Purple Verdure HZK9C Yellow Green Purple Light Blue HZK11A Yellow Green Light Blue Pink HZK11B Yellow Green Light Blue Verdure HZK11C Yellow Green Light Blue Light Blue HZK12A Yellow Green White Pink HZK12B Yellow Green White Verdure HZK12C Yellow Green White Light Blue HZK15 Light Blue Black Pink HZK16 Light Blue Yellow Ocher Pink HZK18 Light Blue Pink Pink HZK20 Light Blue Orange Pink HZK22 Light Blue Yellow Pink HZK24 Light Blue Verdure Pink HZK27 Light Blue Yellow Green Pink HZK30 Light Blue Purple Pink HZK33 Light Blue Light Blue Pink HZK36 Light Blue White Pink
HZK Series
438
Main Characteristics
10
8
6
4
2
04 8 12 16 20
HZK4HZK5
HZK6
24 28 32 4036
HZK16
HZ
K7
HZ
K1
2
HZ
K1
5
HZ
K1
8
HZ
K11
HZ
K9
HZ
K2
HZ
K2
0
HZ
K27
HZ
K22
HZ
K33
HZ
K36
HZ
K30
HZ
K3
HZ
K24
0
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Zener
Curr
ent I Z
(
mA
)
0 5 10 15 20 25 30 35 40
50
40
30
20
10
0
-10
-20
-30
-40
-50
0.10
0.08
0.06
0.04
0.02
0
-0.02
-0.04
-0.06
-0.08
-0.10
%/°C
mV/°C
500
400
300
200
100
200150100500
0
2.5mm
3mm
Printed circuit board
15 × 20 × 1.6t mm
Material: Glass epoxy
Fig.3 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Zener
Voltage T
em
pera
ture
Coeffic
ient
γ z
(
mV
/°C
)
Zener
Voltage T
em
pera
ture
Coeffic
ient
γ z
(
%/°
C)
Zener Voltage VZ (V)
Fig.2 Temperature Coefficient vs. Zener voltage
Pow
er
Dis
sip
ation P
d (
mW
)
439
HZU Series Silicon Planar Zener Diode for Stabilizer
Features • These diodes are delivered taped.
Ordering Information and Pin Arrangement
Cathode mark
Mark
1 2
1. Cathode
2. Anode
2•0
HZU Series
Package Name : URPPackage Code : PTSP0002ZA-A
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd *1 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. With P.C. Board.
HZU Series
440
Electrical Characteristics (Ta = 25°C)
Zener Voltage Reverse Current Dynamic Resistance
VZ (V)*1 Test
Condition IR (μA)Test
Condition rd (Ω) Test
Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)
HZU2.0 B 1.90 2.20 5 120 0.5 100 5 HZU2.2 B 2.10 2.40 5 120 0.7 100 5 HZU2.4 B 2.30 2.60 5 120 1.0 100 5
B 2.50 2.90 B1 2.50 2.75
HZU2.7
B2 2.65 2.90
5 120 1.0 110 5
B 2.80 3.20 B1 2.80 3.05
HZU3.0
B2 2.95 3.20
5 50 1.0 120 5
B 3.10 3.50 B1 3.10 3.35
HZU3.3
B2 3.25 3.50
5 20 1.0 130 5
B 3.40 3.80 B1 3.40 3.65
HZU3.6
B2 3.55 3.80
5 10 1.0 130 5
B 3.70 4.10 B1 3.70 3.97
HZU3.9
B2 3.87 4.10
5 10 1.0 130 5
B 4.01 4.48 B1 4.01 4.21 B2 4.15 4.34
HZU4.3
B3 4.28 4.48
5 10 1.0 130 5
B 4.42 4.90 B1 4.42 4.61 B2 4.55 4.75
HZU4.7
B3 4.69 4.90
5 10 1.0 130 5
B 4.84 5.37 B1 4.84 5.04 B2 4.98 5.20
HZU5.1
B3 5.14 5.37
5 5 1.5 130 5
B 5.31 5.92 B1 5.31 5.55 B2 5.49 5.73
HZU5.6
B3 5.67 5.92
5 5 2.5 80 5
B 5.86 6.53 B1 5.86 6.12 B2 6.06 6.33
HZU6.2
B3 6.26 6.53
5 2 3.0 50 5
B 6.47 7.14 B1 6.47 6.73 B2 6.65 6.93
HZU6.8
B3 6.86 7.14
5 2 3.5 30 5
B 7.06 7.84 B1 7.06 7.36 B2 7.28 7.60
HZU7.5
B3 7.52 7.84
5 2 4.0 30 5
Note: 1. Tested with pulse (PW = 40 ms)
HZU Series
441
(Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance
VZ (V)*1 Test
Condition IR (μA) Test
Condition rd (Ω) Test
Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)
B 7.76 8.64 B1 7.76 8.10 B2 8.02 8.36
HZU8.2
B3 8.28 8.64
5 2 5.0 30 5
B 8.56 9.55 B1 8.56 8.93 B2 8.85 9.23
HZU9.1
B3 9.15 9.55
5 2 6.0 30 5
B 9.45 10.55 B1 9.45 9.87 B2 9.77 10.21
HZU10
B3 10.11 10.55
5 2 7.0 30 5
B 10.44 11.56 B1 10.44 10.88 B2 10.76 11.22
HZU11
B3 11.10 11.56
5 2 8.0 30 5
B 11.42 12.60 B1 11.42 11.90 B2 11.74 12.24
HZU12
B3 12.08 12.60
5 2 9.0 35 5
B 12.47 13.96 B1 12.47 13.03 B2 12.91 13.49
HZU13
B3 13.37 13.96
5 2 10.0 35 5
B 13.84 15.52 B1 13.84 14.46 B2 14.34 14.98
HZU15
B3 14.85 15.52
5 2 11.0 40 5
B 15.37 17.09 B1 15.37 16.01 B2 15.58 16.51
HZU16
B3 16.35 17.09
5 2 12.0 40 5
B 16.94 19.03 B1 16.94 17.70 B2 17.56 18.35
HZU18
B3 18.21 19.03
5 2 13.0 45 5
B 18.86 21.08 B1 18.86 19.70 B2 19.52 20.39
HZU20
B3 20.21 21.08
5 2 15.0 50 5
B 20.88 23.17 B1 20.88 21.77 B2 21.54 22.47
HZU22
B3 22.23 23.17
5 2 17.0 55 5
B 22.93 25.57 B1 22.93 23.96 B2 23.72 24.78
HZU24
B3 24.54 25.57
5 2 19.0 60 5
Note: 1. Tested with pulse (PW = 40 ms)
HZU Series
442
(Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance
VZ (V)*1 Test
Condition IR (μA) Test
Condition rd (Ω) Test
Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)
HZU27 B 25.10 28.90 2 2 21.0 70 2 HZU30 B 28.00 32.00 2 2 23.0 80 2 HZU33 B 31.00 35.00 2 2 25.0 80 2 HZU36 B 34.00 38.00 2 2 27.0 90 2 Note: 1. Tested with pulse (PW = 40 ms).
Mark Code Type Grade Mark No. Type Grade Mark No. Type Grade Mark No.
HZU2.0 B 2 • 0 B1 6 • 2 B1 1 3 • HZU2.2 B 2 • 2 B2 6 • 2 B2 1 3 • HZU2.4 B 2 • 4
HZU6.2
B3 6 • 2
HZU13
B3 1 3 • B1 2 • 7 B1 6 • 8 B1 1 5 • HZU2.7 B2 2 • 7 B2 6 • 8 B2 1 5 • B1 3 • 0
HZU6.8
B3 6 • 8
HZU15
B3 1 5 • HZU3.0 B2 3 • 0 B1 7 • 5 B1 1 6 • B1 3 • 3 B2 7 • 5 B2 1 6 • HZU3.3 B2 3 • 3
HZU7.5
B3 7 • 5
HZU16
B3 1 6 • B1 3 • 6 B1 8 • 2 B1 1 8 • HZU3.6 B2 3 • 6 B2 8 • 2 B2 1 8 • B1 3 • 9
HZU8.2
B3 8 • 2
HZU18
B3 1 8 • HZU3.9 B2 3 • 9 B1 9 • 1 B1 2 0 • B1 4 • 3 B2 9 • 1 B2 2 0 • B2 4 • 3
HZU9.1
B3 9 • 1
HZU20
B3 2 0 • HZU4.3
B3 4 • 3 B1 1 0 • B1 2 2 • B1 4 • 7 B2 1 0 • B2 2 2 • B2 4 • 7
HZU10
B3 1 0 •
HZU22
B3 2 2 • HZU4.7
B3 4 • 7 B1 1 1 • B1 2 4 • B1 5 • 1 B2 1 1 • B2 2 4 • B2 5 • 1
HZU11
B3 1 1 •
HZU24
B3 2 4 • HZU5.1
B3 5 • 1 B1 1 2 • HZU27 B 2 7 • B1 5 • 6 B2 1 2 • HZU30 B 3 0 • B2 5 • 6
HZU12
B3 1 2 • HZU33 B 3 3 • HZU5.6
B3 5 • 6 HZU36 B 3 6 • Notes: 1. Example of Marking
(1) One grade type (B) (2) Two grade type (B1,B2)
Upper
(3) Three grade type (B1,B2,B3)
30• 3•0
HZU30B HZU3.0B1
3•0
HZU3.0B2
4•3
HZU4.3B1
4•3
HZU4.3B3
4•3
HZU4.3B2
2•0
HZU2.0B
Center Lower
2. The grade B type includes from B1 min. to B3 (or B2) max. 3. B grade is standard and has better delivery, these are marked one of B1, B2, B3. 4. Type No. is as follows; HZU2.0B, HZU2.2B, ••• HZU36B. (B grade) 5. Type No. is as follows; HZU2.7B1, HZU2.7B2, ••• HZU24B3. (B 1, B2, B3 grade)
HZU Series
443
Main Characteristics
250
200
150
100
50
200150100500
0
10
8
6
4
2
040 8 12 16 20 24 28 32 4036
HZ
U1
8
HZ
U2
.0
HZ
U2
0
HZ
U2
.4H
ZU
3.0
HZ
U3
.6H
ZU
4.3
HZ
U5
.1H
ZU
6.2
HZ
U7
.5H
ZU
8.2
HZ
U9
.1H
ZU
10
HZ
U1
3
HZ
U1
6
HZ
U36
HZ
U33
HZ
U30
HZ
U27
HZ
U6
.8
HZ
U1
2
HZ
U22
0.8mm0.8mm
0.8
mm
1.5mm
HZ
U1
1
HZ
U1
5
HZ
U24
Printed circuit board
5×20×1.6t mmMaterial: Glass Epoxy Resin+Cu Foil
Cu Foil
Po
we
r D
issip
atio
n
Pd
(
mW
)
Ambient Temperature Ta (°C)
Fig.3 Power Dissipation vs. Ambient Temperature
Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t γ Z
(
%/°
C)
Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t γ Z
(m
V/°
C)
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage VZ (V)
Zener Voltage VZ (V)
Fig.1 Zener current vs. Zener voltage
Ze
ne
r C
urr
en
t
I Z (
mA
)
0 5 10 15 20 25 30 35 40
50
40
30
20
10
0
mV/°C
−10
−20
−30
−40
−50
%/°C
0.10
0.08
0.06
0.04
0.02
−0.02
−0.04
−0.06
−0.08
−0.10
0
444
RKZ-KG Series Silicon Planar Zener Diode for Surge Absorption and Stabilizer
Features • These diodes are delivered taped. • Lineup of environmental friendly Halogen free type (RKZ-KG-P6 Series 6:Pb free & Halogen free).
Ordering Information and Pin Arrangement
Cathode mark
Mark
1 2
1. Cathode
2. Anode
2•0
RKZ-KG Series
Package Name : URP
Package Code : PTSP0002ZA-A
Taping Abbreviation (Quantity)
P (3,000 pcs / reel)
RKZ-KG P6 Series (Halogen-free type)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd *1 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. With P.C. Board.
RKZ-KG Series
445
Electrical Characteristics (Ta = 25°C)
Zener Voltage Reverse Current Dynamic Resistance ESD-Capability *2
VZ (V) *1 Test
Condition IR (μA) Test
Condition rd (Ω) Test
Condition — (kV) *2 Part No. Min Max IZ (mA) Max VR (V) Max IZ (mA) Min
RKZ2.0BKG 1.90 2.20 5 120 0.5 100 5 30 RKZ2.2BKG 2.10 2.40 5 120 0.7 100 5 30 RKZ2.4BKG 2.30 2.60 5 120 1.0 100 5 30 RKZ2.7B2KG 2.65 2.90 5 120 1.0 110 5 30 RKZ3.0B2KG 2.95 3.20 5 50 1.0 120 5 30 RKZ3.3B2KG 3.25 3.50 5 20 1.0 130 5 30 RKZ3.6B2KG 3.55 3.80 5 10 1.0 130 5 30 RKZ3.9B2KG 3.87 4.10 5 10 1.0 130 5 30 RKZ4.3B2KG 4.15 4.34 5 10 1.0 130 5 30 RKZ4.7B2KG 4.55 4.75 5 10 1.0 130 5 30 RKZ5.1B2KG 4.98 5.20 5 5 1.5 130 5 30 RKZ5.6B2KG 5.49 5.73 5 5 2.5 80 5 30 RKZ6.2B2KG 6.06 6.33 5 2 3.0 50 5 30 RKZ6.8B2KG 6.65 6.93 5 2 3.5 30 5 30 RKZ7.5B2KG 7.28 7.60 5 2 4.0 30 5 30 RKZ8.2B2KG 8.02 8.36 5 2 5.0 30 5 30 RKZ9.1B2KG 8.85 9.23 5 2 6.0 30 5 30 RKZ10B2KG 9.77 10.21 5 2 7.0 30 5 30 RKZ11B2KG 10.76 11.22 5 2 8.0 30 5 30 RKZ12B2KG 11.74 12.24 5 2 9.0 35 5 30 RKZ13B2KG 12.91 13.49 5 2 10.0 35 5 30 RKZ15B2KG 14.34 14.98 5 2 11.0 40 5 25 RKZ16B2KG 15.85 16.51 5 2 12.0 40 5 25 RKZ18B2KG 17.56 18.35 5 2 13.0 45 5 25 RKZ20B2KG 19.52 20.39 5 2 15.0 50 5 20 RKZ22B2KG 21.54 22.47 5 2 17.0 55 5 20 RKZ24B2KG 23.72 24.78 5 2 19.0 60 5 15 RKZ27BKG 25.10 28.90 2 2 21.0 70 2 15 RKZ30BKG 28.00 32.00 2 2 23.0 80 2 13 RKZ33BKG 31.00 35.00 2 2 25.0 80 2 8 RKZ36BKG 34.00 38.00 2 2 27.0 90 2 8 Notes: 1. Tested with pulse (Pw = 40 ms).
2. C =150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse Failure criterion ; According to IR spec
RKZ-KG Series
446
Mark Code Part No. Mark No. Part No. Mark No.
RKZ2.0BKG 2 • 0 RKZ9.1B2KG 9 • 1 RKZ2.2BKG 2 • 2 RKZ10B2KG 1 0 • RKZ2.4BKG 2 • 4 RKZ11B2KG 1 1 • RKZ2.7B2KG 2 • 7 RKZ12B2KG 1 2 • RKZ3.0B2KG 3 • 0 RKZ13B2KG 1 3 • RKZ3.3B2KG 3 • 3 RKZ15B2KG 1 5 • RKZ3.6B2KG 3 • 6 RKZ16B2KG 1 6 • RKZ3.9B2KG 3 • 9 RKZ18B2KG 1 8 • RKZ4.3B2KG 4 • 3 RKZ20B2KG 2 0 • RKZ4.7B2KG 4 • 7 RKZ22B2KG 2 2 • RKZ5.1B2KG 5 • 1 RKZ24B2KG 2 4 • RKZ5.6B2KG 5 • 6 RKZ27BKG 2 7 • RKZ6.2B2KG 6 • 2 RKZ30BKG 3 0 • RKZ6.8B2KG 6 • 8 RKZ33BKG 3 3 • RKZ7.5B2KG 7 • 5 RKZ36BKG 3 6 • RKZ8.2B2KG 8 • 2 Note: Example of Marking
RKZ2.0BKG RKZ10B2KG
2•0 10•
RKZ-KG Series
447
Main Characteristics
250
200
150
100
50
200150100500
0
Po
we
r D
issip
atio
n
Pd
(
mW
)
Ambient Temperature Ta (°C)
Fig.3 Power Dissipation vs. Ambient Temperature
Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t γ Z
(
%/°
C)
Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t γ Z
(m
V/°
C)
Ze
ne
r C
urr
en
t
I Z
(m
A)
50
40
30
20
10
0
-10
-20
-30
-40
-50
0.08
0.06
0.04
0.02
-0.02
-0.04
-0.06
-0.08
-0.10
0
Polyimide board
3.0
0.8
1.5
20hx15wx0.8t
1.5
unit: mm
10
8
6
4
2
0
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage VZ (V)
40 8 12 16 20 24 28 32 4036
RK
Z33B
KG
RK
Z30B
KG
RK
Z27B
KG
Zener Voltage VZ (V)
Fig.1 Zener current vs. Zener voltage
RK
Z22B
2K
G
RK
Z24B
2K
G
RK
Z2
.0B
KG
RK
Z6
.2B
2K
G
RK
Z2
0B
2K
G
RK
Z36B
KG
mV/°C
%/°C
RK
Z1
8B
2K
G
RK
Z3
.0B
2K
G
RK
Z3
.6B
2K
GR
KZ
4.3
B2
KG
RK
Z5
.1B
2K
G
RK
Z7
.5B
2K
GR
KZ
8.2
B2
KG
RK
Z9
.1B
2K
GR
KZ
10
B2
KG
RK
Z1
3B
2K
G
RK
Z1
6B
2K
G
RK
Z1
2B
2K
GR
KZ
11
B2
KG
RK
Z1
5B
2K
G
RK
Z2
.4B
KG
RK
Z6
.8B
2K
G
0 5 10 15 20 25 30 35 40
0.10
RKZ-KG Series
448
Fig.4 Surge Reverse Power Ratings(Reference data)
Time t (s)
Nonre
petitive S
urg
e R
evers
es P
ow
er
P
RS
M (
W)
1.01.0
10
100
100.1 1000
RKZ5.6B2KG
RKZ3.9B2KG
RKZ15B2KG
t
PRSM
Ta = 25°Cnonrepetitive
449
RKZ-KJ Series Silicon Planar Zener Diode for Surge Absorption and Stabilizer
Features • Emboss Taping Reel Pack.
Ordering Information and Pin Arrangement
1. Cathode
2. Anode
Package Code: PWSF0002ZA-A
Taping Abbreviation (Quantity)
R (8,000 pcs / reel)
Package Name : UFP
RKZ-KJ Series
P (4,000 pcs / reel)
Cathode mark
Mark
1 22 0•
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd *1 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. With P.C. Board.
RKZ-KJ Series
450
Electrical Characteristics (Ta = 25°C)
Zener Voltage Reverse Current Dynamic Resistance ESD-Capability *2
VZ (V) *1 Test
Condition IR (μA) Test
Condition rd (Ω) Test
Condition — (kV) *2 Part No. Min Max IZ (mA) Max VR (V) Max IZ (mA) Min
RKZ2.0BKJ 1.90 2.20 5 120 0.5 100 5 30 RKZ2.2BKJ 2.10 2.40 5 120 0.7 100 5 30 RKZ2.4BKJ 2.30 2.60 5 120 1.0 100 5 30 RKZ2.7B2KJ 2.65 2.90 5 120 1.0 110 5 30 RKZ3.0B2KJ 2.95 3.20 5 50 1.0 120 5 30 RKZ3.3B2KJ 3.25 3.50 5 20 1.0 130 5 30 RKZ3.6B2KJ 3.55 3.80 5 10 1.0 130 5 30 RKZ3.9B2KJ 3.87 4.10 5 10 1.0 130 5 30 RKZ4.3B2KJ 4.15 4.34 5 10 1.0 130 5 30 RKZ4.7B2KJ 4.55 4.75 5 10 1.0 130 5 30 RKZ5.1B2KJ 4.98 5.20 5 5 1.5 130 5 30 RKZ5.6B2KJ 5.49 5.73 5 5 2.5 80 5 30 RKZ6.2B2KJ 6.06 6.33 5 2 3.0 50 5 30 RKZ6.8B2KJ 6.65 6.93 5 2 3.5 30 5 30 RKZ7.5B2KJ 7.28 7.60 5 2 4.0 30 5 30 RKZ8.2B2KJ 8.02 8.36 5 2 5.0 30 5 30 RKZ9.1B2KJ 8.85 9.23 5 2 6.0 30 5 30 RKZ10B2KJ 9.77 10.21 5 2 7.0 30 5 30 RKZ11B2KJ 10.76 11.22 5 2 8.0 30 5 30 RKZ12B2KJ 11.74 12.24 5 2 9.0 35 5 30 RKZ13B2KJ 12.91 13.49 5 2 10.0 35 5 30 RKZ15B2KJ 14.34 14.98 5 2 11.0 40 5 25 RKZ16B2KJ 15.85 16.51 5 2 12.0 40 5 25 RKZ18B2KJ 17.56 18.35 5 2 13.0 45 5 25 RKZ20B2KJ 19.52 20.39 5 2 15.0 50 5 20 RKZ22B2KJ 21.54 22.47 5 2 17.0 55 5 20 RKZ24B2KJ 23.72 24.78 5 2 19.0 60 5 15 RKZ27BKJ 25.10 28.90 2 2 21.0 70 2 15 RKZ30BKJ 28.00 32.00 2 2 23.0 80 2 13 RKZ33BKJ 31.00 35.00 2 2 25.0 80 2 8 RKZ36BKJ 34.00 38.00 2 2 27.0 90 2 8 Notes: 1. Tested with pulse (Pw = 40 ms). 2. C =150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse
Failure criterion ; According to IR spec 3. The material of lead is exposed for cutting plane. Therefore, soldering nature of lead tip part is considered as
unquestioned. Please kindly consider soldering nature.
RKZ-KJ Series
451
Mark Code Part No. Mark No. Part No. Mark No.
RKZ2.0BKJ 2 • 0 RKZ9.1B2KJ 9 • 1 RKZ2.2BKJ 2 • 2 RKZ10B2KJ 1 0 • RKZ2.4BKJ 2 • 4 RKZ11B2KJ 1 1 • RKZ2.7B2KJ 2 • 7 RKZ12B2KJ 1 2 • RKZ3.0B2KJ 3 • 0 RKZ13B2KJ 1 3 • RKZ3.3B2KJ 3 • 3 RKZ15B2KJ 1 5 • RKZ3.6B2KJ 3 • 6 RKZ16B2KJ 1 6 • RKZ3.9B2KJ 3 • 9 RKZ18B2KJ 1 8 • RKZ4.3B2KJ 4 • 3 RKZ20B2KJ 2 0 • RKZ4.7B2KJ 4 • 7 RKZ22B2KJ 2 2 • RKZ5.1B2KJ 5 • 1 RKZ24B2KJ 2 4 • RKZ5.6B2KJ 5 • 6 RKZ27BKJ 2 7 • RKZ6.2B2KJ 6 • 2 RKZ30BKJ 3 0 • RKZ6.8B2KJ 6 • 8 RKZ33BKJ 3 3 • RKZ7.5B2KJ 7 • 5 RKZ36BKJ 3 6 • RKZ8.2B2KJ 8 • 2 Note: Example of Marking
RKZ10B2KJ
2•0
RKZ2.0BKJ
10•
RKZ-KJ Series
452
Main Characteristics
250
200
150
100
50
200150100500
0
Po
we
r D
issip
atio
n
Pd
(
mW
)
Ambient Temperature Ta (°C)
Fig.3 Power Dissipation vs. Ambient Temperature
Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t γ Z
(
%/°
C)
Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t γ Z
(m
V/°
C)
0 5 10 15 20
50
40
30
20
10
0
-10
-20
-30
-40
-50
0.10
0.08
0.06
0.04
0.02
-0.02
-0.04
-0.06
-0.08
-0.10
0
Polyimide board
3.0
0.8
1.5
20hx15wx0.8t
1.5
unit: mm
10
8
6
4
2
0
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage VZ (V)
40 8 12 16 20 24 28 32 4036
RK
Z1
8B
2K
J
RK
Z3
.0B
2K
J
RK
Z3
.6B
2K
JR
KZ
4.3
B2
KJ
RK
Z5
.1B
2K
J
RK
Z7
.5B
2K
JR
KZ
8.2
B2
KJ
RK
Z9
.1B
2K
JR
KZ
10
B2
KJ
RK
Z1
3B
2K
J
RK
Z1
6B
2K
J
RK
Z33B
KJ
RK
Z30B
KJ
RK
Z27B
KJ
RK
Z1
2B
2K
J
Ze
ne
r C
urr
en
t
I Z
(m
A)
Zener Voltage VZ (V)
Fig.1 Zener current vs. Zener voltage
RK
Z22B
2K
J
RK
Z1
1B
2K
J
RK
Z1
5B
2K
J
RK
Z24B
2K
J
RK
Z2
.0B
KJ
RK
Z2
.4B
KJ
RK
Z6
.8B
2K
JR
KZ
6.2
B2
KJ
RK
Z2
0B
2K
J
RK
Z36B
KJ
mV/°C
%/°C
25 30 35 40
RKZ-KJ Series
453
Fig.4 Surge Reverse Power Ratings(Reference data)
Time t (ms)
Nonre
petitive S
urg
e R
evers
es P
ow
er
P
RS
M (
W)
1.01.0
10
100
100.1 1000
RKZ5.6B2KJ
RKZ3.9B2KJ
RKZ15B2KJ
t
PRSM
Ta = 25°Cnonrepetitive
RKZ36BKJ
454
RKZ-KK Series Silicon Planar Zener Diode for Surge Absorption and Stabilizer
Features • Emboss Taping Reel Pack.
Ordering Information and Pin Arrangement
Cathode mark
Mark
1. Cathode
2. Anode
1 2C1
RKZ-KK Series
Package Name : SFP
Package Code: PUSF0002ZB-A
Taping Abbreviation (Quantity)
KRF (8,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd *1 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. With P.C. Board.
RKZ-KK Series
455
Electrical Characteristics (Ta = 25°C)
Zener Voltage Reverse Current Dynamic Resistance ESD-Capability *2
VZ (V) *1 Test
Condition IR (µA) Test
Condition rd (Ω) Test
Condition — (kV) *2 Part No. Min Max IZ (mA) Max VR (V) Max IZ (mA) Min
RKZ2.0BKK 1.90 2.20 5 120 0.5 100 5 30 RKZ2.2BKK 2.10 2.40 5 120 0.7 100 5 30 RKZ2.4BKK 2.30 2.60 5 120 1.0 100 5 30 RKZ2.7B2KK 2.65 2.90 5 120 1.0 110 5 30 RKZ3.0B2KK 2.95 3.20 5 50 1.0 120 5 30 RKZ3.3B2KK 3.25 3.50 5 20 1.0 130 5 30 RKZ3.6B2KK 3.55 3.80 5 10 1.0 130 5 30 RKZ3.9B2KK 3.87 4.10 5 10 1.0 130 5 30 RKZ4.3B2KK 4.15 4.34 5 10 1.0 130 5 30 RKZ4.7B2KK 4.55 4.75 5 10 1.0 130 5 30 RKZ5.1B2KK 4.98 5.20 5 5 1.5 130 5 30 RKZ5.6B2KK 5.49 5.73 5 5 2.5 80 5 30 RKZ6.2B2KK 6.06 6.33 5 2 3.0 50 5 30 RKZ6.8B2KK 6.65 6.93 5 2 3.5 30 5 30 RKZ7.5B2KK 7.28 7.60 5 2 4.0 30 5 30 RKZ8.2B2KK 8.02 8.36 5 2 5.0 30 5 30 RKZ9.1B2KK 8.85 9.23 5 2 6.0 30 5 30 RKZ10B2KK 9.77 10.21 5 2 7.0 30 5 30 RKZ11B2KK 10.76 11.22 5 2 8.0 30 5 30 RKZ12B2KK 11.74 12.24 5 2 9.0 35 5 30 RKZ13B2KK 12.91 13.49 5 2 10.0 35 5 30 RKZ15B2KK 14.34 14.98 5 2 11.0 40 5 25 RKZ16B2KK 15.85 16.51 5 2 12.0 40 5 25 RKZ18B2KK 17.56 18.35 5 2 13.0 45 5 25 RKZ20B2KK 19.52 20.39 5 2 15.0 50 5 20 RKZ22B2KK 21.54 22.47 5 2 17.0 55 5 20 RKZ24B2KK 23.72 24.78 5 2 19.0 60 5 15 RKZ27BKK 25.10 28.90 2 2 21.0 70 2 15 RKZ30BKK 28.00 32.00 2 2 23.0 80 2 13 RKZ33BKK 31.00 35.00 2 2 25.0 80 2 8 RKZ36BKK 34.00 38.00 2 2 27.0 90 2 8 Notes: 1. Tested with pulse (Pw = 40 ms). 2. C =150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse
Failure criterion ; According to IR spec 3. The material of lead is exposed for cutting plane. Therefore, soldering nature of lead tip part is considered as
unquestioned. Please kindly consider soldering nature.
RKZ-KK Series
456
Mark Code Part No. Mark No. Part No. Mark No.
RKZ2.0BKK C1 RKZ9.1B2KK G3 RKZ2.2BKK C2 RKZ10B2KK G6 RKZ2.4BKK C3 RKZ11B2KK G9 RKZ2.7B2KK C5 RKZ12B2KK J3 RKZ3.0B2KK C7 RKZ13B2KK J6 RKZ3.3B2KK C9 RKZ15B2KK J9 RKZ3.6B2KK D2 RKZ16B2KK M3 RKZ3.9B2KK D4 RKZ18B2KK M6 RKZ4.3B2KK D6 RKZ20B2KK M9 RKZ4.7B2KK D9 RKZ22B2KK P3 RKZ5.1B2KK E3 RKZ24B2KK P6 RKZ5.6B2KK E6 RKZ27BKK P8 RKZ6.2B2KK E9 RKZ30BKK P9 RKZ6.8B2KK F3 RKZ33BKK N4 RKZ7.5B2KK F6 RKZ36BKK N5 RKZ8.2B2KK F9 Note: Example of Marking
N5
RKZ36BKK
C1
RKZ2.0BKK
RKZ-KK Series
457
Main Characteristics
Zener
Curr
ent I Z
(
mA
)
10
8
6
4
2
040 8 12 16 20 24 28 32 4036
RK
Z1
8B
2K
K
RK
Z3.0
B2
KK
RK
Z3.6
B2K
KR
KZ
4.3
B2K
KR
KZ
5.1
B2K
K
RK
Z7.5
B2K
KR
KZ
8.2
B2K
KR
KZ
9.1
B2K
KR
KZ
10
B2
KK
RK
Z1
3B
2K
K
RK
Z1
6B
2K
K
RK
Z33B
KK
RK
Z30B
KK
RK
Z27B
KK
RK
Z1
2B
2K
K
Zener Voltage VZ (V)
Fig.1 Zener current vs. Zener voltage
RK
Z22B
2K
K
RK
Z1
1B
2K
K
RK
Z1
5B
2K
K
RK
Z24B
2K
K
RK
Z2.0
BK
KR
KZ
2.4
BK
K
RK
Z6.8
B2K
KR
KZ
6.2
B2K
K
RK
Z2
0B
2K
K
RK
Z36B
KK
250
200
150
100
50
200150100500
0
Pow
er
Dis
sip
ation P
d (
mW
)
Ambient Temperature Ta (°C)
Fig.3 Power Dissipation vs. Ambient Temperature
Zener
Voltage
Tem
pera
ture
Coeffic
ient γ Z
(
%/°
C)
Zener
Voltage
Tem
pera
ture
Coeffic
ient γ Z
(m
V/°
C)
0 5 10 15 20
50
40
30
20
10
0
-10
-20
-30
-40
-50
0.10
0.08
0.06
0.04
0.02
-0.02
-0.04
-0.06
-0.08
-0.10
0
Polyimide board
3.0
0.8
1.5
20hx15wx0.8t
1.5
unit: mm
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage VZ (V)
mV/°C
%/°C
25 30 35 40
458
RKZ-KL Series Silicon Planar Zener Diode for Surge Absorption and Stabilizer
Features • Emboss Taping Reel Pack.
Ordering Information and Pin Arrangement
1 2C1
Cathode mark
MarkPackage Code: PXSF0002ZA-A
RKZ-KL Sirees
Taping Abbreviation (Quantity)
R (10,000 pcs / reel)
Package Name : EFP
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd *1 100 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. With P.C. Board.
RKZ-KL Series
459
Electrical Characteristics (Ta = 25°C)
Zener Voltage Reverse Current Dynamic Resistance ESD-Capability *2
VZ (V) *1 Test
Condition IR (μA) Test
Condition rd (Ω) Test
Condition — (kV) *2 Part No. Min Max IZ (mA) Max VR (V) Max IZ (mA) Min
RKZ2.0BKL 1.90 2.20 5 120 0.5 100 5 30 RKZ2.2BKL 2.10 2.40 5 120 0.7 100 5 30 RKZ2.4BKL 2.30 2.60 5 120 1.0 100 5 30 RKZ2.7B2KL 2.65 2.90 5 120 1.0 110 5 30 RKZ3.0B2KL 2.95 3.20 5 50 1.0 120 5 30 RKZ3.3B2KL 3.25 3.50 5 20 1.0 130 5 30 RKZ3.6B2KL 3.55 3.80 5 10 1.0 130 5 30 RKZ3.9B2KL 3.87 4.10 5 10 1.0 130 5 30 RKZ4.3B2KL 4.15 4.34 5 10 1.0 130 5 30 RKZ4.7B2KL 4.55 4.75 5 10 1.0 130 5 30 RKZ5.1B2KL 4.98 5.20 5 5 1.5 130 5 30 RKZ5.6B2KL 5.49 5.73 5 5 2.5 80 5 30 RKZ6.2B2KL 6.06 6.33 5 2 3.0 50 5 30 RKZ6.8B2KL 6.65 6.93 5 2 3.5 30 5 30 RKZ7.5B2KL 7.28 7.60 5 2 4.0 30 5 30 RKZ8.2B2KL 8.02 8.36 5 2 5.0 30 5 30 RKZ9.1B2KL 8.85 9.23 5 2 6.0 30 5 30 RKZ10B2KL 9.77 10.21 5 2 7.0 30 5 30 RKZ11B2KL 10.76 11.22 5 2 8.0 30 5 30 RKZ12B2KL 11.74 12.24 5 2 9.0 35 5 30 RKZ13B2KL 12.91 13.49 5 2 10.0 35 5 30 RKZ15B2KL 14.34 14.98 5 2 11.0 40 5 25 RKZ16B2KL 15.85 16.51 5 2 12.0 40 5 25 RKZ18B2KL 17.56 18.35 2 2 13.0 45 2 25 RKZ20B2KL 19.52 20.39 2 2 15.0 50 2 20 RKZ22B2KL 21.54 22.47 2 2 17.0 55 2 20 RKZ24B2KL 23.72 24.78 2 2 19.0 60 2 15 RKZ27BKL 25.10 28.90 2 2 21.0 70 2 15 RKZ30BKL 28.00 32.00 2 2 23.0 80 2 13 RKZ33BKL 31.00 35.00 2 2 25.0 80 2 8 RKZ36BKL 34.00 38.00 2 2 27.0 90 2 8 Notes: 1. Tested with pulse (Pw = 40 ms).
2. C =150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse Failure criterion ; According to IR spec
3. For EFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature.
RKZ-KL Series
460
Mark Code Part No. Mark No. Part No. Mark No.
RKZ2.0BKL C1 RKZ9.1B2KL G3 RKZ2.2BKL C2 RKZ10B2KL G6 RKZ2.4BKL C3 RKZ11B2KL G9 RKZ2.7B2KL C5 RKZ12B2KL J3 RKZ3.0B2KL C7 RKZ13B2KL J6 RKZ3.3B2KL C9 RKZ15B2KL J9 RKZ3.6B2KL D2 RKZ16B2KL M3 RKZ3.9B2KL D4 RKZ18B2KL M6 RKZ4.3B2KL D6 RKZ20B2KL M9 RKZ4.7B2KL D9 RKZ22B2KL P3 RKZ5.1B2KL E3 RKZ24B2KL P6 RKZ5.6B2KL E6 RKZ27BKL P8 RKZ6.2B2KL E9 RKZ30BKL P9 RKZ6.8B2KL F3 RKZ33BKL N4 RKZ7.5B2KL F6 RKZ36BKL N5 RKZ8.2B2KL F9 Note: Example of Marking
N5
RKZ36BKL
C1
RKZ2.0BKL
RKZ-KL Series
461
Main Characteristics
250
200
150
100
50
200150100500
0
Po
we
r D
issip
atio
n
Pd
(
mW
)
Ambient Temperature Ta (°C)
Fig.3 Power Dissipation vs. Ambient Temperature
Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t γ Z
(
%/°
C)
Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t γ Z
(m
V/°
C)
Ze
ne
r C
urr
en
t
I Z
(m
A)
50
40
30
20
10
0
-10
-20
-30
-40
-50
0.10
0.08
0.06
0.04
0.02
-0.02
-0.04
-0.06
-0.08
-0.10
0
Polyimide board
3.0
0.8
1.5
20hx15wx0.8t
1.5
unit: mm
10
8
6
4
2
0
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage VZ (V)
40 8 12 16 20 24 28 32 4036
RK
Z33B
KL
RK
Z30B
KL
RK
Z27B
KL
Zener Voltage VZ (V)
Fig.1 Zener current vs. Zener voltage
RK
Z22B
2K
L
RK
Z24B
2K
L
RK
Z2
.0B
KL
RK
Z6
.2B
2K
L
RK
Z2
0B
2K
L
RK
Z36B
KL
mV/°C
%/°C
RK
Z1
8B
2K
L
RK
Z3
.0B
2K
L
RK
Z3
.6B
2K
LR
KZ
4.3
B2
KL
RK
Z5
.1B
2K
L
RK
Z7
.5B
2K
LR
KZ
8.2
B2
KL
RK
Z9
.1B
2K
LR
KZ
10
B2
KL
RK
Z1
3B
2K
L
RK
Z1
6B
2K
L
RK
Z1
2B
2K
LR
KZ
11
B2
KL
RK
Z1
5B
2K
L
RK
Z2.4
BK
L
RK
Z6
.8B
2K
L
0 5 10 15 20 25 30 35 40
462
HZ-L Series Silicon Planar Zener Diode for Low Noise Application
Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
power supply, etc. • Wide voltage range from 5.2 V through 38 V of zener voltage provide flexible application.
Ordering Information and Pin Arrangement
1. Cathode
2. Anode
7B 2
Part No.
1 2Body color is orange
Cathode band (Navy Blue)
HZ-L Series
Package Name : DO-35Package Code : GRZZ0002ZB-A
Taping Abbreviation (Quantity)
TA (5,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd 400 mW Junction temperature Tj 175 °C Storage temperature Tstg –55 to +175 °C
HZ-L Series
463
Electrical Characteristics (Ta = 25°C)
Zener Voltage Reverse Current Dynamic Resistance
VZ (V) *1 Test
Condition IR (μA) Test
Condition rd (Ω) Test
ConditionPart No. Min Max IZ (mA) Max VR (V) Max IZ (mA)
HZ6A1L 5.2 5.5 HZ6A2L 5.3 5.6 HZ6A3L 5.4 5.7
0.5 1 2.0 150 0.5
HZ6B1L 5.5 5.8 HZ6B2L 5.6 5.9 HZ6B3L 5.7 6.0
0.5 1 2.0 80 0.5
HZ6C1L 5.8 6.1 HZ6C2L 6.0 6.3 HZ6C3L 6.1 6.4
0.5 1 2.0 60 0.5
HZ7A1L 6.3 6.6 HZ7A2L 6.4 6.7 HZ7A3L 6.6 6.9 HZ7B1L 6.7 7.0 HZ7B2L 6.9 7.2 HZ7B3L 7.0 7.3 HZ7C1L 7.2 7.6 HZ7C2L 7.3 7.7 HZ7C3L 7.5 7.9
0.5 1 3.5 60 0.5
HZ9A1L 7.7 8.1 HZ9A2L 7.9 8.3 HZ9A3L 8.1 8.5 HZ9B1L 8.3 8.7 HZ9B2L 8.5 8.9 HZ9B3L 8.7 9.1 HZ9C1L 8.9 9.3 HZ9C2L 9.1 9.5 HZ9C3L 9.3 9.7
0.5 1 6.0 60 0.5
HZ11A1L 9.5 9.9 HZ11A2L 9.7 10.1 HZ11A3L 9.9 10.3 HZ11B1L 10.2 10.6 HZ11B2L 10.4 10.8 HZ11B3L 10.7 11.1 HZ11C1L 10.9 11.3 HZ11C2L 11.1 11.6 HZ11C3L 11.4 11.9
0.5 1 8.0 80 0.5
Note: 1. Tested with DC.
HZ-L Series
464
(Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance
VZ (V) *1 Test
Condition IR (μA) Test
Condition rd (Ω) Test
ConditionPart No. Min Max IZ (mA) Max VR (V) Max IZ (mA)
HZ12A1L 11.6 12.1 HZ12A2L 11.9 12.4 HZ12A3L 12.2 12.7 HZ12B1L 12.4 12.9 HZ12B2L 12.6 13.1 HZ12B3L 12.9 13.4 HZ12C1L 13.2 13.7 HZ12C2L 13.5 14.0 HZ12C3L 13.8 14.3
0.5 1 10.5 80 0.5
HZ15-1L 14.1 14.7 HZ15-2L 14.5 15.1 HZ15-3L 14.9 15.5
0.5 1 13.0 80 0.5
HZ16-1L 15.3 15.9 HZ16-2L 15.7 16.5 HZ16-3L 16.3 17.1
0.5 1 14.0 80 0.5
HZ18-1L 16.9 17.7 HZ18-2L 17.5 18.3 HZ18-3L 18.1 19.0
0.5 1 15.0 80 0.5
HZ20-1L 18.8 19.7 HZ20-2L 19.5 20.4 HZ20-3L 20.2 21.1
0.5 1 18.0 100 0.5
HZ22-1L 20.9 21.9 HZ22-2L 21.6 22.6 HZ22-3L 22.3 23.3
0.5 1 20.0 100 0.5
HZ24-1L 22.9 24.0 HZ24-2L 23.6 24.7 HZ24-3L 24.3 25.5
0.5 1 22.0 120 0.5
HZ27-1L 25.2 26.6 HZ27-2L 26.2 27.6 HZ27-3L 27.2 28.6
0.5 1 24.0 150 0.5
HZ30-1L 28.2 29.6 HZ30-2L 29.2 30.6 HZ30-3L 30.2 31.6
0.5 1 27.0 200 0.5
HZ33-1L 31.2 32.6 HZ33-2L 32.2 33.6 HZ33-3L 33.2 34.6
0.5 1 30.0 250 0.5
HZ36-1L 34.2 35.7 HZ36-2L 35.3 36.8 HZ36-3L 36.4 38.0
0.5 1 33.0 300 0.5
Note: 1. Tested with DC.
HZ-L Series
465
Main Characteristics
5 10 15 20 25 30 35 400
HZ
6B
2L
HZ
16
-2L
HZ
9B
2L
HZ
12
B2
L
HZ
20
-1L
HZ
24
-2L
HZ
30
-2L
HZ
36
-2L
Ze
ne
r C
urr
en
t
I Z
(A
)
10−5
10−6
10−4
10−3
10−2
10−7
10−8
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
0 5 10 15 20 25 30 35 40
%/°C
mV/°C
500
400
300
200
100
200150100500
0
2.5 mm
3 mm
Printed circuit board
100 180 1.6t mm
Material: paper phenol
× ×
l
l = 10 mm
l = 5 mm
Po
we
r D
issip
atio
n
Pd
(
mW
)
l = 20 mm(Publication value)
0.10
0.08
0.06
0.04
0.02
−0.02
−0.04
−0.06
−0.08
−0.10Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t γ Z
(
%/°
C)
0
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage VZ (V)
50
40
30
20
10
0
−10
−20
−30
−40
−50 Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t γ Z
(
mV
/°C
)
Fig.3 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
466
HZ-LL Series Silicon Planar Zener Diode for Hard Knee Low Noise
Features • VZ-IZ characteristics are semi logarithmic linear from IZ = 1 nA to 1 mA and have sharper breakdown knees in a low
current region, and also lower VZ temperature coefficients. • Low dynamic impedance and low noise in the low current region (approximately 1/10 lower than the current zeners).
Ordering Information and Pin Arrangement
1. Cathode
2. Anode
HZ-LL Series
Package Name : DO-35Package Code : GRZZ0002ZB-A
Taping Abbreviation (Quantity)
TA (5,000 pcs / reel)
2A
Cathode band(Navy blue)Part No.
1 2Body color is Verdure
Absolute Maximum Ratings (Ta = 25°C)
tem Symbol Value Unit Power dissipation Pd 250 mW Junction temperature Tj 175 °C Storage temperature Tstg –55 to +175 °C
Electrical Characteristics
(Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance Linearity*3
VZ(V) *1 IR (nA) ZZT (Ω) ZZK (Ω)*2 ∆VZ1 (V) ∆VZ2(V)Part No. Min Max IZ (mA) Max VR (V) Max IZT (mA) Typ IZK (µA) Max Max
HZ2ALL 1.6 2.0 HZ2BLL 1.9 2.3 HZ2CLL 2.2 2.6
0.5 100 0.5 350 0.5 (1.2) 50 0.5 0.6
HZ3ALL 2.5 2.9 HZ3BLL 2.8 3.2 HZ3CLL 3.1 3.5
0.5 100 1.0 360 0.5 (1.2) 50 0.5 0.6
HZ4ALL 3.4 3.8 HZ4BLL 3.7 4.1 HZ4CLL 4.0 4.4
0.5 100 2.0 370 0.5 (1.5) 50 0.5 0.6
HZ5ALL 4.3 4.7 HZ5BLL 4.6 5.0 HZ5CLL 4.9 5.3
0.5 100 3.0 380 0.5 (1.5) 50 0.5 0.6
Notes: 1. Tested with DC. 2. Reference only. 3. ∆VZ1 = VZ (IZ = 0.5 mA) – VZ1 (Iz = 0.05 mA) ∆VZ2 = VZ1 (IZ = 0.05 mA) – VZ2 (Iz = 0.001 mA)
HZ-LL Series
467
Main Characteristics
0 1 2 3 4 5 6 7 8
HZ
3B
LL
HZ
4B
LL
HZ
5B
LL
HZ
2B
LL
1 2 3 4 5 6
-0.5
-1.0
-1.5
0
-2.0
%/°CmV/°C
250
200
150
100
50
200150100500
0
2.5 mm
3 mm
5mm
10–5
10–6
10–4
10–3
10–2
10–10
10–9
10–8
10–7
-0.02
-0.03
-0.04
-0.01
-0.05 Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t
γ Z (
mV
/°C
)
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage VZ (V)Z
en
er
Vo
lta
ge
Te
mp
era
ture
Co
effic
ien
t
γ Z (
%/°
C)
Printed circuit board
100 × 180×1.6t mm
Material: paper phenol
Po
we
r D
issip
atio
n P
d (
mW
)
Fig.3 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t I Z
(
A)
468
HZS-L Series Silicon Planar Zener Diode for Low Noise Application
Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
power supply, etc. • Wide voltage range from 5.2 V through 38 V of zener voltage provide flexible application. • Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information and Pin Arrangement
1. Cathode
2. Anode
HZS-L Series
Package Name : MHDPackage Code : GRZZ0002ZC-A
Taping Abbreviation (Quantity)
TA (5,000 pcs / reel) Part No.
1 2
B
2
7
Cathode band (Black)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd 400 mW Junction temperature Tj 200 °C Storage temperature Tstg –55 to +175 °C
HZS-L Series
469
Electrical Characteristics (Ta = 25°C)
Zener Voltage Reverse Current Dynamic Resistance
VZ (V) *1 Test
Condition IR (μA) Test
Condition rd (Ω) Test
ConditionPart No. Min Max IZ (mA) Max VR (V) Max IZ (mA)
HZS6A1L 5.2 5.5 HZS6A2L 5.3 5.6 HZS6A3L 5.4 5.7
0.5 1 2.0 150 0.5
HZS6B1L 5.5 5.8 HZS6B2L 5.6 5.9 HZS6B3L 5.7 6.0
0.5 1 2.0 80 0.5
HZS6C1L 5.8 6.1 HZS6C2L 6.0 6.3 HZS6C3L 6.1 6.4
0.5 1 2.0 60 0.5
HZS7A1L 6.3 6.6 HZS7A2L 6.4 6.7 HZS7A3L 6.6 6.9 HZS7B1L 6.7 7.0 HZS7B2L 6.9 7.2 HZS7B3L 7.0 7.3 HZS7C1L 7.2 7.6 HZS7C2L 7.3 7.7 HZS7C3L 7.5 7.9
0.5 1 3.5 60 0.5
HZS9A1L 7.7 8.1 HZS9A2L 7.9 8.3 HZS9A3L 8.1 8.5 HZS9B1L 8.3 8.7 HZS9B2L 8.5 8.9 HZS9B3L 8.7 9.1 HZS9C1L 8.9 9.3 HZS9C2L 9.1 9.5 HZS9C3L 9.3 9.7
0.5 1 6.0 60 0.5
HZS11A1L 9.5 9.9 HZS11A2L 9.7 10.1 HZS11A3L 9.9 10.3 HZS11B1L 10.2 10.6 HZS11B2L 10.4 10.8 HZS11B3L 10.7 11.1 HZS11C1L 10.9 11.3 HZS11C2L 11.1 11.6 HZS11C3L 11.4 11.9
0.5 1 8.0 80 0.5
HZS12A1L 11.6 12.1 HZS12A2L 11.9 12.4 HZS12A3L 12.2 12.7 HZS12B1L 12.4 12.9 HZS12B2L 12.6 13.1 HZS12B3L 12.9 13.4 HZS12C1L 13.2 13.7 HZS12C2L 13.5 14.0 HZS12C3L 13.8 14.3
0.5 1 10.5 80 0.5
Note: 1. Tested with DC.
HZS-L Series
470
(Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance
VZ (V) *1 Test
Condition IR (μA) Test
Condition rd (Ω) Test
ConditionPart No. Min Max IZ (mA) Max VR (V) Max IZ (mA)
HZS15-1L 14.1 14.7 HZS15-2L 14.5 15.1 HZS15-3L 14.9 15.5
0.5 1 13.0 80 0.5
HZS16-1L 15.3 15.9 HZS16-2L 15.7 16.5 HZS16-3L 16.3 17.1
0.5 1 14.0 80 0.5
HZS18-1L 16.9 17.7 HZS18-2L 17.5 18.3 HZS18-3L 18.1 19.0
0.5 1 15.0 80 0.5
HZS20-1L 18.8 19.7 HZS20-2L 19.5 20.4 HZS20-3L 20.2 21.1
0.5 1 18.0 100 0.5
HZS22-1L 20.9 21.9 HZS22-2L 21.6 22.6 HZS22-3L 22.3 23.3
0.5 1 20.0 100 0.5
HZS24-1L 22.9 24.0 HZS24-2L 23.6 24.7 HZS24-3L 24.3 25.5
0.5 1 22.0 120 0.5
HZS27-1L 25.2 26.6 HZS27-2L 26.2 27.6 HZS27-3L 27.2 28.6
0.5 1 24.0 150 0.5
HZS30-1L 28.2 29.6 HZS30-2L 29.2 30.6 HZS30-3L 30.2 31.6
0.5 1 27.0 200 0.5
HZS33-1L 31.2 32.6 HZS33-2L 32.2 33.6 HZS33-3L 33.2 34.6
0.5 1 30.0 250 0.5
HZS36-1L 34.2 35.7 HZS36-2L 35.3 36.8 HZS36-3L 36.4 38.0
0.5 1 33.0 300 0.5
Note: 1. Tested with DC.
HZS-L Series
471
Main Characteristics
0 5 10 15 20 25 30 35 40
50
40
30
20
10
0
−10
−20
−30
−40
−50
5 10 15 20 25 30 35 400
200150100500
2.5 mm
3 mm
l
l = 5 mm
l = 10 mm(Publication value)
HZ
S6
B2
L
HZ
S1
6-2
L
HZ
S9
B2
L
HZ
S1
2B
2L
HZ
S2
0-2
L
HZ
S2
4-2
L
HZ
S3
0-2
L
HZ
S3
6-2
L
Zener
Curr
ent I Z
(
A)
10−5
10−6
10−4
10−3
10−2
10−7
10−8
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t
γ Z (
mV
/°C
)
%/°C
mV/°C
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage VZ (V)
0.10
0.08
0.06
0.04
0.02
−0.02
−0.04
−0.06
−0.08
−0.10Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t
γ Z (
%/°
C) 500
400
300
200
100
0
Pow
er
Dis
sip
ation P
d (
mW
)
Printed circuit board
100 × 180 × 1.6t mm
Quality: paper phenol
Fig.3 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
0
472
HZS-LL Series Silicon Planar Zener Diode for Hard Knee Low Noise
Features • Vz-Iz characteristics are semilogarithmic linear from IZ = 1 nA to 1 mA and have sharper breakdown knees in a low
current region, and also lower VZ temperature coefficients. • Low dynamic impedance and low noise in the low current region (approximately 1/10 lower than the current zeners). • Suitable for 5 mm-pitch high speed automatic insertion.
Ordering Information and Pin Arrangement
1. Cathode
2. Anode
HZS-LL Series
Package Name : MHDPackage Code : GRZZ0002ZC-A
Taping Abbreviation (Quantity)
TA (5,000 pcs / reel)
2
Part No.
1
2A
Cathode band (Navy blue)
Absolute Maximum Ratings (Ta = 25°C)
tem Symbol Value Unit Power dissipation Pd 250 mW Junction temperature Tj 175 °C Storage temperature Tstg –55 to +175 °C
HZS-LL Series
473
Electrical Characteristics
(Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance Linearity*3
VZ(V) *1 IR (nA) ZZT (Ω) ZZK (Ω)*2 ΔVZ1 (V) ΔVZ2(V)Part No. Min Max IZ (mA) Max VR (V) Max IZT (mA) Typ IZK (μA) Max Max
HZS2ALL 1.6 2.0 HZS2BLL 1.9 2.3 HZS2CLL 2.2 2.6
0.5 100 0.5 350 0.5 (1.2) 50 0.5 0.6
HZS3ALL 2.5 2.9 HZS3BLL 2.8 3.2 HZS3CLL 3.1 3.5
0.5 100 1.0 360 0.5 (1.2) 50 0.5 0.6
HZS4ALL 3.4 3.8 HZS4BLL 3.7 4.1 HZS4CLL 4.0 4.4
0.5 100 2.0 370 0.5 (1.5) 50 0.5 0.6
HZS5ALL 4.3 4.7 HZS5BLL 4.6 5.0 HZS5CLL 4.9 5.3
0.5 100 3.0 380 0.5 (1.5) 50 0.5 0.6
Notes: 1. Tested with DC. 2. Reference only. 3. ΔVZ1 = VZ (IZ = 0.5 mA) – VZ1 (Iz = 0.05 mA) ΔVZ2 = VZ1 (IZ = 0.05 mA) – VZ2 (Iz = 0.001 mA)
HZS-LL Series
474
Main Characteristics
1 2 3 4 5 6
-0.5
-1.0
-1.5
-0.02
-0.03
-0.04
-0.01
-0.05
0
-2.0
250
200
150
100
50
200150100500
0
2.5 mm
3 mm
5mm
0 1 2 3 4 5 6 7 8
HZ
S3B
LL
HZ
S4B
LL
HZ
S5B
LL
HZ
S2B
LL
Po
we
r D
issip
atio
n P
d (
mW
)
Fig.3 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Printed circuit board
100 × 180 × 1.6t mm
Quality: paper phenol
10–5
10–6
10–4
10–3
10–2
10–10
10–9
10–8
10–7
%/°CmV/°C
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t I Z
(
A)
Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t
γ Z (
mV
/°C
)
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage VZ (V)Z
en
er
Vo
lta
ge
Te
mp
era
ture
Co
effic
ien
t
γ Z (
%/°
C)
475
HZK-L Series Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply
Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW. • Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
Ordering Information and Pin Arrangement
1. Cathode
2. Anode
1 2
Cathode band
3rd. band2nd. band
1 2
Cathode band
3rd. band2nd. band
HZK-L Series
Package Name : LLDPackage Code : GLZZ0002ZA-A
Taping Abbreviation (Quantity)
TR(2,500 pcs / reel)
TL(2,500 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd 400 mW Junction temperature Tj 175 °C Storage temperature Tstg –55 to +175 °C Note: With P.C. Board.
HZK-L Series
476
Electrical Characteristics (Ta = 25°C)
Zener Voltage Reverse Current Dynamic Resistance
VZ (V) *1 Test
Condition IR (μA) Test
Condition rd (Ω) Test
ConditionPart No. Min Max IZ (mA) Max VR (V) Max IZ (mA)
HZK6AL 5.2 5.7 150 HZK6BL 5.5 6.0 80 HZK6CL 5.8 6.4
0.5 1 2.0
60
0.5
HZK7AL 6.3 6.9 HZK7BL 6.7 7.3 HZK7CL 7.2 7.9
0.5 1 3.5 60 0.5
HZK9AL 7.7 8.5 HZK9BL 8.3 9.1 HZK9CL 8.9 9.7
0.5 1 6.0 60 0.5
HZK11AL 9.5 10.3 HZK11BL 10.2 11.1 HZK11CL 10.9 11.9
0.5 1 8.0 80 0.5
HZK12AL 11.6 12.7 HZK12BL 12.4 13.4 HZK12CL 13.2 14.3
0.5 1 10.5 80 0.5
HZK15L 14.1 15.5 0.5 1 13.0 80 0.5 HZK16L 15.3 17.1 0.5 1 14.0 80 0.5 HZK18L 16.9 19.0 0.5 1 15.0 80 0.5 HZK20L 18.8 21.1 0.5 1 18.0 100 0.5 HZK22L 20.9 23.3 0.5 1 20.0 100 0.5 HZK24L 22.9 25.5 0.5 1 22.0 120 0.5 HZK27L 25.2 28.6 0.5 1 24.0 150 0.5 HZK30L 28.2 31.6 0.5 1 27.0 200 0.5 HZK33L 31.2 34.6 0.5 1 30.0 250 0.5 HZK36L 34.2 38.0 0.5 1 33.0 300 0.5 Note: Tested with DC. Type No. is as follows: HZK6AL, HZK6BL, ••• HZK36L.
HZK-L Series
477
Mark Color Code Type Cathode Band Second Band Third Band
HZK6AL Orange Verdure Pink HZK6BL Orange Verdure Verdure HZK6CL Orange Verdure Light Blue HZK7AL Orange Yellow Green Pink HZK7BL Orange Yellow Green Verdure HZK7CL Orange Yellow Green Light Blue HZK9AL Orange Purple Pink HZK9BL Orange Purple Verdure HZK9CL Orange Purple Light Blue HZK11AL Orange Light Blue Pink HZK11BL Orange Light Blue Verdure HZK11CL Orange Light Blue Light Blue HZK12AL Orange White Pink HZK12BL Orange White Verdure HZK12CL Orange White Light Blue HZK15L Yellow Black Pink HZK16L Yellow Yellow Ocher Pink HZK18L Yellow Pink Pink HZK20L Yellow Orange Pink HZK22L Yellow Yellow Pink HZK24L Yellow Verdure Pink HZK27L Yellow Yellow Green Pink HZK30L Yellow Purple Pink HZK33L Yellow Light Blue Pink HZK36L Yellow White Pink HZK30L Yellow Purple Pink HZK33L Yellow Light Blue Pink HZK36L Yellow White Pink
HZK-L Series
478
Main Characteristics
0 5 10 15 20 25 30 35 40
HZK16L HZK24LHZK7L
HZ
K1
1L
HZ
K1
2L
HZ
K1
5L
HZ
K1
8L
HZ
K2
0L
HZ
K2
7L
HZ
K3
0L
HZ
K3
3L
HZ
K3
6L
HZ
K6
L
HZ
K9
L
HZ
K2
2L
0 5 10 15 20 25 30 35 40
50
40
30
20
10
0
−10
−20
−30
−40
−50
0.10
0.08
0.06
0.04
0.02
0
−0.02
−0.04
−0.06
−0.08
−0.10
%/°C
mV/°C
500
400
300
200
100
200150100500
0
2.5mm
3mm
Printed circuit board
15 × 20 × 1.6t mm
Material: Glass epoxy
Fig.3 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Po
we
r D
issip
atio
n
Pd
(
mW
)
10–5
10–6
10–4
10–3
10–2
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r C
urr
en
t
I Z (
A)
Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t
γ Z (
mV
/°C
)
Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t
γ Z (
%/°
C)
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage VZ (V)
479
HZK-LL Series Silicon Planar Zener Diode for Hard Knee Low Noise
Features • Low dynamic impedance and low noise in the low current region (approximately 1/10 lower than the current zeners).
Ordering Information and Pin Arrangement
1. Cathode
2. Anode
1 2
Cathode band
3rd. band2nd. band
1 2
Cathode band
3rd. band2nd. band
HZK-LL Series
Package Name : LLDPackage Code : GLZZ0002ZA-A
Taping Abbreviation (Quantity)
TR(2,500 pcs / reel)
TL(2,500 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd * 250 mW Junction temperature Tj 175 °C Storage temperature Tstg –55 to +175 °C Note: With P.C. Board.
HZK-LL Series
480
Electrical Characteristics
(Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance Linearity*3
VZ(V) *1 IR (nA) ZZT (Ω) ZZK (Ω)*2 ΔVZ1 (V) ΔVZ2(V)Part No. Min Max IZ (mA) Max VR (V) Max IZT (mA) Typ IZK (μA) Max Max
HZK2ALL 1.6 2.0 HZK2BLL 1.9 2.3 HZK2CLL 2.2 2.6
0.5 100 0.5 350 0.5 (1.2) 50 0.5 0.6
HZK3ALL 2.5 2.9 HZK3BLL 2.8 3.2 HZK3CLL 3.1 3.5
0.5 100 1.0 360 0.5 (1.2) 50 0.5 0.6
HZK4ALL 3.4 3.8 HZK4BLL 3.7 4.1 HZK4CLL 4.0 4.4
0.5 100 2.0 370 0.5 (1.5) 50 0.5 0.6
HZK5ALL 4.3 4.7 HZK5BLL 4.6 5.0 HZK5CLL 4.9 5.3
0.5 100 3.0 380 0.5 (1.5) 50 0.5 0.6
Notes: 1. Tested with DC. 2. Reference only. 3. ΔVZ1 = VZ (IZ = 0.5 mA) – VZ1 (Iz = 0.05 mA) ΔVZ2 = VZ1 (IZ = 0.05 mA) – VZ2 (Iz = 0.001 mA)
Mark Color Code Type Cathode Band Second Band Third Band
HZK2ALL Verdure Yellow Ocher Pink HZK2BLL Verdure Yellow Ocher Blue HZK2CLL Verdure Yellow Ocher Light Blue HZK3ALL Verdure Pink Pink HZK3BLL Verdure Pink Blue HZK3CLL Verdure Pink Light Blue HZK4ALL Verdure Orange Pink HZK4BLL Verdure Orange Blue HZK4CLL Verdure Orange Light Blue HZK5ALL Verdure Yellow Pink HZK5BLL Verdure Yellow Blue HZK5CLL Verdure Yellow Light Blue
HZK-LL Series
481
Main Characteristics
0 1 2 3 4 5 6 7 8
HZ
K2LL
HZ
K3LL
HZ
K4LL
HZ
K5LL
1 2 3 4 5 6
−0.5
−1.0
−1.5
−0.02
−0.03
−0.04
−0.01
−0.05
0
−2.0
250
200
150
100
50
200150100500
0
2.5mm
3mm
Printed circuit board
15 × 20 × 1.6t mm
Material: Glass epoxy
%/°CmV/°C
10–6
10–8
10–3
10–4
10–2
10–5
10–7
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Zener
Curr
ent I Z
(
A)
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage VZ (V)
Zener
Vo
ltage T
em
pera
ture
Coeffic
ient
γ Z
(
mV
/°C
)
Zener
Voltage T
em
pera
ture
Coeffic
ient
γ Z (
%/°
C)
Fig.3 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Pow
er
Dis
sip
ation P
d (
mW
)
482
HZU-L Series Silicon Planar Zener Diode for Low Noise Application
Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage and low zener impedance. • Wide spectrum from 5.2 V through 14.3 V of zener voltage provide flexible application.
Ordering Information and Pin Arrangement
Cathode mark
Mark
1 2061
1. Cathode
2. Anode
HZU-L Series
Package Name : URPPackage Code : PTSP0002ZA-A
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit Power dissipation Pd 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
HZU-L Series
483
Electrical Characteristics (Ta = 25°C)
Zener Voltage Reverse Current Dynamic Resistance
VZ (V) *1 Test
Condition IR (μA) Test
Condition rd (Ω) Test
ConditionType Min Max IZ (mA) Max VR (V) Max IZ (mA)
HZU6A1L 5.2 5.5 HZU6A2L 5.3 5.6 HZU6A3L 5.4 5.7
0.5 1 2.0 150 0.5
HZU6B1L 5.5 5.8 HZU6B2L 5.6 5.9 HZU6B3L 5.7 6.0
0.5 1 2.0 80 0.5
HZU6C1L 5.8 6.1 HZU6C2L 6.0 6.3 HZU6C3L 6.1 6.4
0.5 1 2.0 60 0.5
HZU7A1L 6.3 6.6 HZU7A2L 6.4 6.7 HZU7A3L 6.6 6.9 HZU7B1L 6.7 7.0 HZU7B2L 6.9 7.2 HZU7B3L 7.0 7.3 HZU7C1L 7.2 7.6 HZU7C2L 7.3 7.7 HZU7C3L 7.5 7.9
0.5 1 3.5 60 0.5
HZU9A1L 7.7 8.1 HZU9A2L 7.9 8.3 HZU9A3L 8.1 8.5 HZU9B1L 8.3 8.7 HZU9B2L 8.5 8.9 HZU9B3L 8.7 9.1 HZU9C1L 8.9 9.3 HZU9C2L 9.1 9.5 HZU9C3L 9.3 9.7
0.5 1 6.0 60 0.5
HZU11A1L 9.5 9.9 HZU11A2L 9.7 10.1 HZU11A3L 9.9 10.3 HZU11B1L 10.2 10.6 HZU11B2L 10.4 10.8 HZU11B3L 10.7 11.1 HZU11C1L 10.9 11.3 HZU11C2L 11.1 11.6 HZU11C3L 11.4 11.9
0.5 1 8.0 80 0.5
HZU12A1L 11.6 12.1 HZU12A2L 11.9 12.4 HZU12A3L 12.2 12.7 HZU12B1L 12.4 12.9 HZU12B2L 12.6 13.1 HZU12B3L 12.9 13.4 HZU12C1L 13.2 13.7 HZU12C2L 13.5 14.0 HZU12C3L 13.8 14.3
0.5 1 10.5 80 0.5
Note: 1. Tested with DC.
HZU-L Series
484
Mark Code Part No. Mark No. Part No. Mark No. Part No. Mark No.
HZU6A1L 061 HZU9 A1L 091 HZU12A1L 121 HZU6A2L 062 HZU9 A2L 092 HZU12A2L 122 HZU6A3L 063 HZU9 A3L 093 HZU12A3L 123 HZU6B1L 064 HZU9 B1L 094 HZU12B1L 124 HZU6B2L 065 HZU9 B2L 095 HZU12B2L 125 HZU6B3L 066 HZU9 B3L 096 HZU12B3L 126 HZU6C1L 067 HZU9 C1L 097 HZU12C1L 127 HZU6C2L 068 HZU9 C2L 098 HZU12C2L 128 HZU6C3L 069 HZU9 C3L 099 HZU12C3L 129 HZU7A1L 071 HZU11A1L 111 HZU7A2L 072 HZU11A2L 112 HZU7A3L 073 HZU11A3L 113 HZU7B1L 074 HZU11B1L 114 HZU7B2L 075 HZU11B2L 115 HZU7B3L 076 HZU11B3L 116 HZU7C1L 077 HZU11C1L 117 HZU7C2L 078 HZU11C2L 118 HZU7C3L 079 HZU11C3L 119
HZU-L Series
485
Main Characteristics
50
40
30
20
10
0
−10
−20
−30
−40
−50
0.10
0.08
0.06
0.04
0.02
0
−0.02
−0.04
−0.06
−0.08
−0.10
250
200
150
100
50
200150100500
0
Printed circuit board
15 20 1.6t mm
Material: Glass Epoxy Resin
+Cu Foil
× ×
1.5mm 0.8mm
Cu Foil
0.8
mm
Zener
Voltage
Te
mp
era
ture
Co
effic
ien
t γ Z
(
%/°
C)
Zener
Voltage
Te
mp
era
ture
Co
effic
ien
t γ Z
(m
V/°
C)
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage VZ (V)
Pow
er
Dis
sip
ation P
d (
mW
)
Ambient Temperature Ta (°C)
Fig.3 Power Dissipation vs. Ambient Temperature
Zener
Curr
ent I Z
(
A)
0 5 10 15
mV/°C
%/°C
8 155
HZ
U6
B2
L
HZ
U9
B2
L
HZ
U1
2B
2L
10–4
10–2
10–3
10–5
10–6
10–7
10–8
Zener Voltage VZ (V)
Fig.1 Zener current vs. Zener voltage
HZ
U1
1C
2L
HZ
U7
C2
L
HZ
U6
A2
L
HZ
U7
B2
L
HZ
U6
C2
L
HZ
U7
A2
L
6 7 9 10 11 12 13 14
HZ
U9
A2
L
HZ
U9
C2
L
HZ
U1
1A
2L
HZ
U1
1B
2L
HZ
U1
2C
2L
HZ
U1
2A
2L
486
HZU-LL Series Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise
Features • Low noise voltage (approximately 1/3 to 1/10 lower than the HZU series). • Temperature coefficient is approximately 1/2 lower than the HZU series. • Vz-Iz characteristics are semi-logarithmic linear from IZ = 1 nA to 1 mA.
Ordering Information and Pin Arrangement
Cathode mark
Mark
1 2
1. Cathode
2. Anode
2A
HZU-LL Series
Package Name : URPPackage Code : PTSP0002ZA-A
Taping Abbreviation (Quantity)
TRF (3,000 pcs / reel)
Absolute Maximum Ratings (Ta = 25°C)
tem Symbol Value Unit Power dissipation Pd * 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: See Fig3.
HZU-LL Series
487
Electrical Characteristics (Ta = 25°C)
Zener Voltage Reverse Current Dynamic Resistance LinearityVZ(V) *1 IR (nA) ZZT (Ω) ZZK (kΩ) *2 ΔVZ(V) *3
Part No. Min Max IZ (mA) Max VR (V) Max IZT (mA) Typ IZK (μA) Max HZU2ALL 1.6 2.0 HZU2BLL 1.9 2.3 HZU2CLL 2.2 2.6
0.5 100 0.5 350 0.5 (1.2) 50 0.5
HZU3ALL 2.5 2.9 HZU3BLL 2.8 3.2 HZU3CLL 3.1 3.5
0.5 100 1.0 360 0.5 (1.2) 50 0.5
HZU4ALL 3.4 3.8 HZU4BLL 3.7 4.1 HZU4CLL 4.0 4.4
0.5 100 2.0 370 0.5 (1.5) 50 0.5
HZU5ALL 4.3 4.7 HZU5BLL 4.6 5.0 HZU5CLL 4.9 5.3
0.5 100 3.0 380 0.5 (1.5) 50 0.5
Notes: 1. Tested with DC. 2. Reference only. 3. ΔVZ = VZ (IZ = 0.5 mA) – VZ (Iz = 0.05 mA) 4. Type No. is as follows; HZU2ALL, HZU2BLL, … HZU5CLL.
Mark Code Part No Mark No. Part No Mark No.
HZU2ALL 2A HZU4ALL 4A HZU2BLL 2B HZU4BLL 4B HZU2CLL 2C HZU4CLL 4C HZU3ALL 3A HZU5ALL 5A HZU3BLL 3B HZU5BLL 5B HZU3CLL 3C HZU5CLL 5C
HZU-LL Series
488
Main Characteristics
0 1 2 3 4 5 6 7 8
HZ
U2LL
HZ
U3LL
HZ
U4LL
HZ
U5LL
1 2 3 4 5 6
–0.5
–1.0
–1.5
–0.02
–0.03
–0.04
–0.01
–0.05
0
–2.0
%/°CmV/°C
250
200
150
100
50
200150100500
0
Printed circuit board
15 20 1.6t mm
Material: Glass Epoxy Resin
+Cu Foil
× ×
1.5mm 0.8mm
Cu Foil
0.8
mm
Ze
ne
r C
urr
en
t
I Z (
A)
Zener Voltage VZ (V)
Fig.1 Zener current vs. Zener voltage
Ambient Temperature Ta (°C)
Fig.3 Power Dissipation vs. Ambient Temperature
Po
we
r D
issip
atio
n
Pd
(
mW
)
10–4
10–2
10–3
10–5
10–6
10–7
10–8
Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t
γ Z (m
V/°
C)
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage VZ (V)
Ze
ne
r V
olta
ge
Te
mp
era
ture
Co
effic
ien
t
gZ (
%/°
C)
489
MEMO
490
MEMO
Renesas Diode
Data Book
Publication Date: Rev.1.00, March 26, 2009
Published by: Sales Strategic Planning Div.
Renesas Technology Corp.
Edited by: Customer Support Department
Global Strategic Communication Div.
Renesas Solutions Corp.
© 2009. Renesas Technology Corp., All rights reserved. Printed in Japan.
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http://www.renesas.com
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