relaxation of intracenter excitations in monoisotopic 28 si:p
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Relaxation of intracenter excitations in monoisotopic 28 Si:P. - PowerPoint PPT PresentationTRANSCRIPT
Folie 1Silicon 2010, N. Novgorod >09.07.2010
Relaxation of intracenter excitations in monoisotopic 28Si:P S.G. Pavlov1, S.A. Lynch2, P.T. Greenland2, K. Litvinenko3, R. Eichholz1, V.N.
Shastin4, B. Redlich5, A.F.G. van der Meer5, N.V. Abrosimov6, H. Riemann6, H.-J. Pohl7, G. Aeppli2, B.N. Murdin3, C.R. Pidgeon8, and H.-W. Hübers1,9
1) Institute of Planetary Research, German Aerospace Center (DLR), Berlin, Germany 2) London Centre for Nanotechnology and Department of Physics and Astronomy, University
College London, England3) Advanced Technology Institute, University of Surrey, Guildford, England
4) Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
5) FOM-Institute for Plasma Physics, Nieuwegein, The Netherlands6) Leibniz Institute of Crystal Growth, Berlin, Germany
7) VITCON Projectconsult GmbH, Jena, Germany8) Department of Physics, Heriot-Watt University Riccarton, Edinburgh, Scotland9) Institut für Optik und Atomare Physik, Technische Universität Berlin, Germany
Folie 2Silicon 2010, N. Novgorod >09.07.2010
Intracenter electronic relaxation in silicon: basics
Recombination of electrons and donors in n-type germanium G. Ascarelli and S. Rodriguez Phys. Rev. 124, 1321, 1961
Cascade capture of electrons in solids M. Lax, Phys. Rev. 119, 1502,.1960
Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon, S.G. Pavlov, H.-W. Hübers, P.M. Haas, J.N. Hovenier, T.O. Klaassen, R.Kh. Zhukavin, V.N. Shastin, D.A. Carder and B. Redlich, Phys. Rev. B. 78, 165201, 2008.
Релаксация возбужденных состояний доноров с излучением междолинных фононов- В.В. Цыпленков, Е.В. Демидов, К.А. Ковалевский, В.Н.Шастин, ФТП 42, 1032, 2008.
Folie 3Silicon 2010, N. Novgorod >09.07.2010
Relaxation of individual impurity states in silicon: experiments
T*=
dN2
*Tln
t
D
Folie 4Silicon 2010, N. Novgorod >09.07.2010
Relaxation of individual impurity states in natural Si:P: experiments
dN2
*Tln
t
D
Silicon as a model ion trap: Time domain measurements of donor Rydberg states, N.Q. Vinh, P.T. Greenland, K. Litvinenko, B. Redlich, A.F.G. van der Meer, S.A. Lynch, M. Warner, A.M. Stoneham, G. Aeppli, D.J. Paul, C.R. Pidgeon and B.N. Murdin, PNAS 105, 10649, 2008.
Folie 5Silicon 2010, N. Novgorod >09.07.2010
Natural linewidth of impurity transitions in 28Si:P: HR absorption spectroscopy
Shallow impurity absorption spectroscopy in isotopically enriched silicon, M. Steger, A. Yang, D. Karaiskaj, M.L.W. Thewalt, E.E. Haller, J.W. Ager, III, M. Cardona, H. Riemann, N.V. Abrosimov, A.V. Gusev, A.D. Bulanov, A.K. Kaliteevskii, O.N. Godisov, P. Becker, and H.-J. Pohl, Phys. Rev. B. 79, 205210, 2009.
5.3ps / FWHM (cm-1)
Natural linewidth ofatomic transitions
Folie 6Silicon 2010, N. Novgorod >09.07.2010
Avogadro Project
-redefine the kilogram based on the lattice constant and density of 28Si
enrichment: 99.99459%
[P] ~ 51011 cm-3 41015 cm-3
[B] ~ 51013 cm-3
dislocation free
Isotopically enriched 28Si:P.
Folie 7Silicon 2010, N. Novgorod >09.07.2010
Relaxation of individual impurity states in silicon: variation of experimental results
dN2
*Tln
t
D
Folie 8Silicon 2010, N. Novgorod >09.07.2010
dN2
*Tln
t
D
Relaxation of individual impurity states in silicon: variation of experimental results
-200 0 200 400 600 800 1000
0.01
0.1
1
Data: PPNP2005_SModel: ExpAssoc, Pts. 117-950 Chi^2/DoF = 0.00026R^2 = 0.98948y0 0.51033 ±0.00244A1 -45.21015 ±1748.32235t1 35.88791 ±17.95444A2 44.78098 ±1748.32374t2 34.97208 ±17.63192
PP_NP2.005 scan, ~36.35µm, 18dB (FEL) data points are upshifted (above 0)
Data: PPNP2005_SModel: ExpDec1 Pts 260-420Chi^2/DoF = 0.00012R^2 = 0.99359y0 0.08619 ±0.00511A1 1.60105 ±0.03706t1 47.71697 ±1.17407
Pro
be
tra
nsm
issi
on
(a
rb.u
n.)
Delay (ps)
3.12.2008 Pupm-probe, FEL1, 25MHz, T~4K,28Si:P 10Pr10.6.1Pe Fz 3.1.2
Folie 9Silicon 2010, N. Novgorod >09.07.2010
Reason of negative contribution in pump-probe
-200 0 200 400 600 800 1000
0.01
0.1
1
Data: PPNP2005_SModel: ExpAssoc, Pts. 117-950 Chi^2/DoF = 0.00026R^2 = 0.98948y0 0.51033 ±0.00244A1 -45.21015 ±1748.32235t1 35.88791 ±17.95444A2 44.78098 ±1748.32374t2 34.97208 ±17.63192
PP_NP2.005 scan, ~36.35µm, 18dB (FEL) data points are upshifted (above 0)
Data: PPNP2005_SModel: ExpDec1 Pts 260-420Chi^2/DoF = 0.00012R^2 = 0.99359y0 0.08619 ±0.00511A1 1.60105 ±0.03706t1 47.71697 ±1.17407
Pro
be
tra
nsm
issi
on
(a
rb.u
n.)
Delay (ps)
3.12.2008 Pupm-probe, FEL1, 25MHz, T~4K,28Si:P 10Pr10.6.1Pe Fz 3.1.2
7800 8000 8200 8400 8600
0.0
0.2
0.4
0.6
0.8
1.0 FEL1 : area 85.451 FEL2 : area 49.481 Si:P V230 : 44.296
Y A
xis
Titl
e
frequency (GHz)
FEL1 (6ps) = 54.4 GHzFEL2 (10ps) = 31.5 GHzSi:P (FTS) = 28.2 GHz
Folie 10Silicon 2010, N. Novgorod >09.07.2010
-100 0 100 200 300 400
0.070.080.090.100.110.120.130.140.150.160.170.180.190.200.210.220.230.240.250.260.27
36.15 36.20 36.25 36.30 36.35 36.40
-0.05
0.00
0.05
0.10
PP_NP2.0XX scans, 23dB (FEL1) =36.35µm =36.33µm =36.25µm =36.40µm =36.15µm
Pro
be
tra
nsm
issi
on
(a
rb.u
n.)
Delay (ps)
3.12.2008 Pupm-probe, FEL1, 25MHz, T~4K,28Si:P 10Pr10.6.1Pe Fz 3.1.2
Tra
nsm
issi
on p
eak
(arb
.un.
)
wavelength (µm)
Reason of negative contribution in pump-probe
Folie 11Silicon 2010, N. Novgorod >09.07.2010
FEL probe
FELIX pump laser
+
-
-
Absorption on 2p0c.b. transitions delivers negative contribution in probe transmission through sample
Different contributions in pump-probe
Folie 12Silicon 2010, N. Novgorod >09.07.2010
35.8 36.0 36.2 36.4 36.6 36.8 37.00.5
1.0
1.5
2.0
2.5
FWHM=0.25µm (0.69%)
Pro
be
tra
nsm
issi
on
FEL1 wavelegth (µm)
1.12.2008, FEL1, 25MHz, ~4K, dispersion~0.25µm
28Si:P 10Pr10.6.Pe Fz3.1.2, 7x7x1 mm3, 3.6x1015 cm-3
normalized Probe transmission, 10dB FEL att Transmission spectrum of Si:P V230
Matching FEL and impurity linewidths
Folie 13Silicon 2010, N. Novgorod >09.07.2010
-200 0 200 400 600 800 1000-0.02
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
Time delay, ps
original data5K 20dB 36.3m
Reduction of negative contribution in pump-probe
Folie 14Silicon 2010, N. Novgorod >09.07.2010
Pumped-probed state
FELIX pump laser
FEL probe
ND(t)=N1s(A1)(t)+N2p0(t)+N1s(E)+N1s(T2)
01
10
21
21
2110
1021D0p2 w
)twexp(
w
)twexp(
ww
ww1)t(N
if two-step decay dominates:
small relative absorbance:
c.b.
two-exp decay fit must be used
where decay rates between states are:w21: 2p0 1s(E,T2)
w10: 1s(E,T2) 1s(A1)
+
Two-exponential decay as step-like decay of the 2p0 state
Folie 15Silicon 2010, N. Novgorod >09.07.2010
5 10 15 20 25 30 351E-3
0.01
0.1
1
Am
plit
ud
e A
1/A
2/A
0 (a
rb. u
.)
Power attenuation (dB)
28 Si two exp fit two exp fit one exp fit
Two-exponential decay: 28Si:P (amplitude)
Folie 16Silicon 2010, N. Novgorod >09.07.2010
5 10 15 20 25 30 350
50
100
150
200
250
300
350
400
t0
t2
t1
Tim
e (
ps)
Power attenuation (dB)
28Si two exp fit two exp fit one exp fit
Two-exponential decay: 28Si:P (decay constants)
Folie 17Silicon 2010, N. Novgorod >09.07.2010
5 10 15 20 25 300.01
0.1
Am
plit
ud
e (
arb
. u.)
Power attenuation (dB)
A1 A2 A0
Two-exponential decay: Si:P (amplitude)
Folie 18Silicon 2010, N. Novgorod >09.07.2010
5 10 15 20 25 30
405060708090
100110120130140150160170180190200210220
Tim
e (
ps)
Power attenuation (dB)
t1 t2 t0
Two-exponential decay: Si:P (decay constant)
Folie 19Silicon 2010, N. Novgorod >09.07.2010
Optically pumped donor intracenter silicon lasers
Phys. Rev. Lett. 84, 5220 (2000)Appl. Phys. Lett. 80, 4717 (2002)J. Appl. Phys. 92, 5632 (2002)Appl. Phys. Lett. 84, 3600 (2004)
Folie 20Silicon 2010, N. Novgorod >09.07.2010
Conclusions:
- Decay of the 2p0 state in Si:P is very likely two-step process- Decay time on the first step (2p01s(E), 1s(T2)) is about 200 ps for 28Si:P and about 150 ps for Si:P- Decay time on the first step (1s(E), 1s(T2) 1s(A1) ) is about 50 ps for 28Si:P and about 50 ps for Si:P
- experiments: different doping (done, not yet analyzed)- two-color time-resolved experiments- modeling of relaxation