rapid switching emitter controlled diode · 2020. 1. 7. · 2 idp20e65d2 emitter controlled diode...
TRANSCRIPT
DiodeRapid�Switching�Emitter�Controlled�Diode
IDP20E65D2Emitter�Controlled�Diode
Data�sheet
Industrial�Power�Control
2
IDP20E65D2Emitter�Controlled�Diode
Rev.�2.1,��2014-09-18
Rapid�Switching�Emitter�Controlled�Diode�Features:
•�Qualified�according�to�JEDEC�for�target�applications•�650�V�Emitter�Controlled�technology•�Fast�recovery•�Soft�switching•�Low�reverse�recovery�charge•�Low�forward�voltage�and�stable�over�temperature•�175�°C�junction�operating�temperature•�Easy�paralleling•�Pb-free�lead�plating;�RoHS�compliant
Applications:
•�Boost�diode�in�CCM�PFC
A
C
CA
C
Key�Performance�and�Package�ParametersType Vrrm If Vf,�Tvj=25°C Tvjmax Marking PackageIDP20E65D2 650V 20A 1.6V 175°C E20ED2 PG-TO220-2-1
3
IDP20E65D2Emitter�Controlled�Diode
Rev.�2.1,��2014-09-18
Table�of�Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4
IDP20E65D2Emitter�Controlled�Diode
Rev.�2.1,��2014-09-18
Maximum�RatingsFor�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.
Parameter Symbol Value UnitRepetitive�peak�reverse�voltage,�Tvj�≥�25°C VRRM 650 V
Diode�forward�current,�limited�by�TvjmaxTC�=�25°CTC�=�100°C
IF 40.020.0
A
Diode�pulsed�current,�tp�limited�by�Tvjmax IFpuls 60.0 A
Diode surge non repetitive forward currentTC�=�25°C,�tp�=�8.3ms,�sine�halfwave IFSM 120.0 A
Power�dissipation�TC�=�25°C Ptot 120.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,wave soldering 1.6 mm (0.063 in.) from case for 10s 260 °C
Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm
Thermal�Resistance
Parameter Symbol Conditions Max.�Value UnitCharacteristic
Diode thermal resistance,1)
junction - case Rth(j-c) 1.25 K/W
Thermal resistancejunction - ambient Rth(j-a) 62 K/W
Electrical�Characteristic,�at�Tvj�=�25°C,�unless�otherwise�specified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
Static�Characteristic
Diode forward voltage VF
IF�=�20.0ATvj�=�25°CTvj�=�175°C
--
1.601.65
2.20-
V
Reverse leakage current IRVR�=�650VTvj�=�25°CTvj�=�175°C
--
2.0500.0
40.0-
µA
Electrical�Characteristic,�at�Tvj�=�25°C,�unless�otherwise�specified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
Dynamic�Characteristic
Internal emitter inductancemeasured 5mm (0.197 in.) fromcase
LE - 7.0 - nH
1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
5
IDP20E65D2Emitter�Controlled�Diode
Rev.�2.1,��2014-09-18
Switching�Characteristic,�Inductive�Load
Valuemin. typ. max.
Parameter Symbol Conditions Unit
Diode�Characteristic,�at�Tvj�=�25°C
Diode reverse recovery time trr - 32 - ns
Diode reverse recovery charge Qrr - 0.25 - µC
Diode peak reverse recovery current Irrm - 12.2 - A
Diode peak rate of fall of reverserecovery�current�during�tb dirr/dt - -900 - A/µs
Tvj�=�25°C,VR�=�400V,IF�=�20.0A,diF/dt�=�1000A/µs,Lσ�=�30nH,Cσ�=�40pF,switch IKW50N65H5
Diode reverse recovery time trr - 43 - ns
Diode reverse recovery charge Qrr - 0.19 - µC
Diode peak reverse recovery current Irrm - 6.3 - A
Diode peak rate of fall of reverserecovery�current�during�tb dirr/dt - -420 - A/µs
Tvj�=�25°C,VR�=�400V,IF�=�20.0A,diF/dt�=�400A/µs,Lσ�=�30nH,Cσ�=�40pF,switch IKW50N65H5
Switching�Characteristic,�Inductive�Load
Valuemin. typ. max.
Parameter Symbol Conditions Unit
Diode�Characteristic,�at�Tvj�=�175°C/125°C
Diode reverse recovery time trr - 55 - ns
Diode reverse recovery charge Qrr - 0.58 - µC
Diode peak reverse recovery current Irrm - 18.0 - A
Diode peak rate of fall of reverserecovery�current�during�tb dirr/dt - -650 - A/µs
Tvj�=�175°C,VR�=�400V,IF�=�20.0A,diF/dt�=�1000A/µs,Lσ�=�30nH,Cσ�=�40pF,switch IKW50N65H5
Diode reverse recovery time trr - 61 - ns
Diode reverse recovery charge Qrr - 0.38 - µC
Diode peak reverse recovery current Irrm - 9.3 - A
Diode peak rate of fall of reverserecovery�current�during�tb dirr/dt - -500 - A/µs
Tvj�=�125°C,VR�=�400V,IF�=�20.0A,diF/dt�=�400A/µs,Lσ�=�30nH,Cσ�=�40pF,switch IKW50N65H5
6
IDP20E65D2Emitter�Controlled�Diode
Rev.�2.1,��2014-09-18
Figure 1. Power�dissipation�as�a�function�of�casetemperature(Tvj≤175°C)
TC,�CASE�TEMPERATURE�[°C]
Ptot ,�POWER�DISSIPATION�[W
]
25 50 75 100 125 150 1750
10
20
30
40
50
60
70
80
90
100
110
120
Figure 2. Diode�transient�thermal�impedance�as�afunction�of�pulse�width(D=tp/T)
tp,�PULSE�WIDTH�[s]
Zth(j -c
) ,�TR
ANSIENT�TH
ERMAL�RESISTA
NCE�[K
/W]
1E-6 1E-5 1E-4 0.001 0.01 0.10.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
10.02225582.3E-5
20.2888551.4E-4
30.3833769.5E-4
40.523325.2E-3
50.03056130.07353007
61.4E-32.05804
Figure 3. Typical�reverse�recovery�time�as�a�function�ofdiode�current�slope(VR=400V)
diF/dt,�DIODE�CURRENT�SLOPE�[A/µs]
trr,�R
EVERSE�RECOVERY�TIME�[ns]
0 500 1000 1500 2000 2500 30000
10
20
30
40
50
60
70
80
90Tj=25°C, IF = 20ATj=175°C, IF = 20A
Figure 4. Typical�reverse�recovery�charge�as�a�functionof�diode�current�slope(VR=400V)
diF/dt,�DIODE�CURRENT�SLOPE�[A/µs]
Qrr,�R
EVERSE�RECOVERY�CHARGE�[µC]
0 500 1000 1500 2000 2500 30000.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8Tj=25°C, IF = 20ATj=175°C, IF = 20A
7
IDP20E65D2Emitter�Controlled�Diode
Rev.�2.1,��2014-09-18
Figure 5. Typical�peak�reverse�recovery�current�as�afunction�of�diode�current�slope(VR=400V)
diF/dt,�DIODE�CURRENT�SLOPE�[A/µs]
Irrm,�R
EVERSE�RECOVERY�CURRENT�[A]
0 500 1000 1500 2000 2500 30000
5
10
15
20
25
30Tj=25°C, IF = 20ATj=175°C, IF = 20A
Figure 6. Typical�diode�peak�rate�of�fall�of�reverserecovery�current�as�a�function�of�diodecurrent�slope(VR=400V)
diF/dt,�DIODE�CURRENT�SLOPE�[A/µs]
dIrr/dt,�diode�peak�rate�of�fall�of�I
rr�[A
/µs]
0 500 1000 1500 2000 2500 3000-1500
-1250
-1000
-750
-500
-250
0Tj=25°C, IF = 20ATj=175°C, IF = 20A
Figure 7. Typical�diode�forward�current�as�a�function�offorward�voltage
VF,�FORWARD�VOLTAGE�[V]
IF ,�FORWARD�CURRENT�[A]
0.0 0.5 1.0 1.5 2.0 2.50
5
10
15
20
25
30
35
40Tj=25°CTj=175°C
Figure 8. Typical�diode�forward�voltage�as�a�function�ofjunction�temperature
Tvj,�JUNCTION�TEMPERATURE�[°C]
VF ,�FO
RWARD�VOLTAGE�[V
]
0 25 50 75 100 125 150 1750.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50IF=10AIF=20AIF=40A
8
IDP20E65D2Emitter�Controlled�Diode
Rev.�2.1,��2014-09-18
PG-TO220-2-1
9
IDP20E65D2Emitter�Controlled�Diode
Rev.�2.1,��2014-09-18
t
a
a
b
b
td(off)
tf t
rtd(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
vGE
(t)
t
t
iC(t)
vCE(t)
90% VGE
vGE(t)
t
t
iC(t)
vCE(t)
tt1 t4
2% IC
10% VGE
2% VCE
t2 t3
E
t
t
V I toff
= x x d
1
2
CE C∫ E
t
t
V I ton
= x x d
3
4
CE C∫
CC
10
IDP20E65D2
Emitter Controlled Diode
Rev. 2.1, 2014-09-18
Revision History
IDP20E65D2
Revision: 2014-09-18, Rev. 2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2014-09-18 Final data sheet
We Listen to Your CommentsAny information within this document that you feel is wrong, unclear or missing at all ?Your feedback will help us to continuously improve the quality of this document.Please send your proposal (including a reference to this document) to: [email protected]
Published byInfineon Technologies AG81726 Munich, Germany81726 München, Germany© 2014 Infineon Technologies AGAll Rights Reserved.
Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding theapplication of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,including without limitation, warranties of non-infringement of intellectual property rights of any third party.
InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearest InfineonTechnologies Office (www.infineon.com).
WarningsDue to technical requirements, components may contain dangerous substances. For information on the types inquestion, please contact the nearest Infineon Technologies Office.The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systemsand/or automotive, aviation and aerospace applications or systems only with the express written approval of InfineonTechnologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Lifesupport devices or systems are intended to be implanted in the human body or to support and/or maintain and sustainand/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may beendangered.