radiation effects on emerging electronic materials and devices
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Radiation Effects on Emerging Electronic Materials and Devices. Ron Schrimpf Vanderbilt University Electrical Engineering & Computer Science Department Institute for Space and Defense Electronics. Radiation Effects on Emerging Electronic Materials and Devices. - PowerPoint PPT PresentationTRANSCRIPT
Radiation Effects on Emerging Electronic Materials and Devices
Ron Schrimpf
Vanderbilt University
Electrical Engineering & Computer Science Department
Institute for Space and Defense Electronics
Radiation Effects on Emerging Electronic Materials and Devices
• More changes in IC technology and materials in past five years than previous forty years– SiGe, SOI, strained Si, alternative dielectrics, new
metallization systems, ultra-small devices…
• Future space and defense systems require understanding radiation effects in advanced technologies– Changes in device geometry and materials affect
energy deposition, charge collection, circuit upset, parametric degradation…
Team Members
• Vanderbilt University– Electrical Engineering: Mike Alles, Dan Fleetwood, Ken Galloway, Marcus
Mendenhall, Lloyd Massengill, Robert Reed, Ron Schrimpf, Bob Weller– Physics: Len Feldman, Sok Pantelides
• Arizona State University– Electrical Engineering: Hugh Barnaby
• University of Florida– Electrical and Computer Engineering: Mark Law, Scott Thompson
• Georgia Tech– Electrical and Computer Engineering: John Cressler
• North Carolina State University– Physics: Gerry Lucovsky
• Rutgers University– Chemistry: Eric Garfunkel, Gennadi Bersuker
• Industrial and government collaborators– IBM, Intel, Texas Instruments, Freescale, Jazz, National Semiconductor,
SRC/Sematech, Sandia, NASA/DTRA, Lockheed-Martin, Oak Ridge National Lab, CFDRC
Institute for Space and Defense Electronics
Resource to support national requirements in radiation effects analysis and rad-hard design
Bring academic resources/expertise and real-world engineering to bear on system-driven needs
ISDE provides:• Government and industry radiation-effects resource
– Modeling and simulation– Design support: rad models, hardening by design– Technology support: assessment, characterization
• Flexible staffing driven by project needs– 10 Faculty– 25 Graduate students– 14 Staff and Research Engineers
Schedule—June 14 AM
8:40 MURI OverviewRon Schrimpf, Vanderbilt University
9:00 Overview: Atomic-Scale Theory of Radiation-Induced PhenomenaSokrates Pantelides, Vanderbilt University
9:20 Hf Impurities in Si-SiO2-Si StacksApostolos Marinopoulos, Vanderbilt University
9:35 Quantum Mechanical Description of Displacement Damage FormationMatt Beck, Vanderbilt University
9:55 Role of Hydrogen in Radiation Response of Lateral PNP Bipolar TransistorsSasha Batyrev, Vanderbilt University
10:10 Doping-Type Dependence of Damage in Silicon DiodesDan Fleetwood, Vanderbilt University
10:30 Break11:00 Defects in Non-Crystalline and Nano-Crystalline Alternative Transition Metal Dielectrics
Gerry Lucovsky, North Carolina State University11:40 Total Dose Response of HfSiON MOS Capacitors
Dakai Chen, Vanderbilt University
Schedule—June 14 PM
1:00 Overview: Radiation Effects in Emerging MaterialsLen Feldman, Vanderbilt University
1:20 Radiation-Induced Charge Trapping in Ultra-Thin HfO2 Based MOSFETsSriram Dixit, Vanderbilt University
1:40 Radiation Effects in Advanced Gate StacksEric Garfunkel, Rutgers UniversityGennadi Bersuker, Sematech
2:20 Break2:50 Radiation Effects in SiGe Devices
John Cressler, Georgia Tech3:30 Effects of Angle of Incidence and Temperature on Latchup in 65-nm Technology
John Hutson, Vanderbilt University3:50 Radiation Challenges in Strained Si Technologies
Scott Thompson, University of Florida4:30 Discussion6:30 Dinner
Schedule—June 158:00 Registration and Continental Breakfast 8:30 Total Ionizing Dose Effects in Deep Submicron Bulk CMOS Technologies
Hugh Barnaby, Arizona State University8:50 Band-to-Band Tunneling Induced Leakage Current Enhancement in Irradiated FD-SOI
Philippe Adell, JPL9:10 Enhanced Radiation-Induced Degradation due to Excess Molecular Hydrogen
Jie Chen, Arizona State University 9:30 Enabling Radiation-Effects Device Simulations
Mark Law, University of Florida9:50 Overview: Monte Carlo Radiative Energy Deposition
Bob Weller, Vanderbilt University10:10 Impact of Ion Energy and Specie on Single Event Effects Analysis
Robert Reed, Vanderbilt University10:30 Break – High Speed SEE Test Set Demonstration in FGH 31011:00 Variation in Proton-Induced Energy Deposition in Large Silicon Diode Arrays
Christina Howe, Vanderbilt University11:20 Neutron-Induced Multiple-Bit Upset
Alan Tipton and Jonny Pellish, Vanderbilt University11:40 Effect of Voltage Fluctuations on SET Response of Deep Submicron Digital ICs
Matt Gadlage, Vanderbilt University12:00 Meeting Ends
DURIP-funded High-Speed SEE Test Equipment
• 12.5 Gbit/s bit error rate tester• 31.5 GHz analog signal generator• 12 GHz real-time digital storage
oscilloscope•DC-40 GHz RF coax assemblies
• Requires high-speed packaging
•DC-40 GHz probe station• 100 nm-step resolution stage•Configure horizontally or
vertically• NIR laser irradiation• Broadbeam heavy ion
• Eliminates need for high-speed packaging
Radiation Effects in Emerging Electronic Materials and Devices
Motivation
Selected Results Impact
• Development of most accurate rate-prediction tool to date• Identification of tungsten as key rad-effects issue• Fabrication of rad-hard, reliable HfSiON gate dielectrics• Demonstration of extremely rad-hard SiGe technology• First examination of rad effects in strained-Si CMOS
• More changes in IC technology and materials in past five years than previous forty years—impact on radiation response is dramatic
• Experimental analysis of state-of-the-art technologies through partnerships with semiconductor manufacturers
• Identification of critical mechanisms through first-principles modeling
• Implementation and application of a revolutionary multi-scale radiation-effects simulation tool to identify key challenges and develop hardening approaches
Approach
• Design tools and methods demonstrated for future rad-hard technologies
• Greatly improved error-rate analysis tools allow implementation of more reliable space electronics
• First radiation-effects characterization of most advanced technologies (strained Si, HfSiON, etc.)—essential for deployment of state-of-the-art electronics in DoD systems
Radiation Effects in Emerging Electronic Materials and Devices: Results
Radiation Response of New Materials
Single Events in New Technologies Localized Radiation Damage• RADSAFE—First multi-scale Monte Carlo single-event/rate-
prediction tool• Passivation/metallization found to dominate SEE response in
some hardened technologies• Excellent agreement with on-orbit data; conventional rate-
prediction methods underestimate rate by orders of magnitude
• Incorporation of new materials dramatically impacts radiation response
• HfO2-based dielectrics and emerging high-k materials tested; HfSiON is very promising
• Substrate engineering (strained Si, Si orientations, Si/SiGe, SOI) offers possibility for single-event hardening
• New device technologies strongly impact single-event response and TID leakage current
• SiGe HBTs, strained Si CMOS, ultra-small bulk CMOS exhibit complicated charge collection mechanisms
• Floating-body SOI found to exhibit high radiation-induced off-state leakage due to tunneling
Impact of New Device Structures
• First-principles evidence of micro-melting in small devices
• Displacement damage found to depend on substrate doping type
• Monte-Carlo simulation tool for non-ionizing energy loss developed
Radiation Effects on Emerging Electronic Materials and Devices: Recent Results
New Error-Rate Prediction Tool
First Radiation Results on HfSiON First dynamical calculation of displace-ment damage from first principles•Hf-based dielectrics
emerging at 45-nm and below
•Much improved radiation response compared to standard Hf silicate films
•Interface nitridation is the key to hardness
• Conventional methods underestimate error rate by orders of magnitude
• New RADSAFE approach provides outstanding agreement with on-orbit data
• Demonstrates that tungsten metallization can dramatically impact error rate
• Multiple-bit upsets are the key reliability issue in advanced memories
• Predicting MBU rate allows design of ECC and memory architecture
• Fraction of events resulting in MBUs doubles for grazing angles
First Neutron MBU Calculations
• Very large disordered regions can lead to single-event hard and soft errors
• Key reliability issue at 65 nm and below
• Possible explanation for dielectric rupture
Radiation Effects on Emerging Electronic Materials and Devices: Recent Results
Effects of Strain on SEE
New Gate Dielectrics SEE in SiGe HBTs•Hf-based dielectrics
emerging in new technologies
•Combined effects of radiation and negative-bias temperature stress much greater than expected
• First experiments to vary strain during SEE testing planned for 2007
• Strain leads to enhanced mobility and non-isotropic transport
• Almost all advanced CMOS will use strain engineering
• Quantitative analysis of MBU rate in advanced SRAMs
• Fraction of events resulting in MBUs increases for new technologies
• Explanation of SEE sensitivity of cells resistant to single strikes
Multiple-Bit Upset
• Microbeam testing shows charge collection from distant strikes
• Mechanisms identified through simulation
• Hardening approach proposed
New Physically-Based Method of Predicting Single-Event Error Rates
MREDSPICE
Sensitive Volumes
TCAD
Critical ChargeSolid Model
Materials
Error RateCross Section
Sensitive Volumes
Circuit ResponseTransport Calorimetry
Cross Section
Error Rate
TransportCalorimetry
Circuit Response
Materials
Environment(Beam/Natural)
LocationsDimensions