WElCOME

Topic: Racetrack Memory

PRESENTED BY

MUZAFAR AHMAD RATHERM.Tech. 3rd Sem. Roll No: 11Centre for Nanoscience and Nanotechnology,

Jamia Millia Islamia

Electronic SystemsModern Technology Driven by

Processing devices/systemsElectronic based

Information Storage devices/systemsMagnetic based(Digital)

Martin Hilbert, The World's Technological Capacity to Store, Communicate, and Compute Information 2011

Moore’s Law

Information Storage devices/systems

FLOPPY DISKMAGNETIC TAPE

OPTICAL DISK HARD DISK DRIVE

SOLID STATE DRIVE

WHAT’S NEXTRaceTrack!

Mechanical movements thus SlowMore powerNot reliableEasy damageTechnology limits

Memory as fast as SSD with high Storage Density, Low Power, Low Cost, Reliable

RACETRACK MEMORY• Racetrack memory (or domain-wall

memory (DWM)) is a non-volatile memory device under development at IBM's. Named so because the data "races" around the nanowire "track“.

• Domains waals store the data and spin polarized currents to have moment of data over U shaped ferromagnetic channel.

• In early 2008, a 3-bit version was successfully demonstrated.

• Cheap, Reliable, Fast, Power(50 times less energy), 100 times more data storage .

WORKING PRINCIPLE1. Writing

a) Using magnetic domain wall injectorb) In domain wall injector current flows in one

direction for writing 0(Red) and in opposite direction for writing bit 1(Blue)

c) Pulsed current perpendicular to the structure pushes domains into or away from reading/writing elements

2. Reading

a) Using Tunnel Magnetoresistance(TMR), effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator.

b) If the insulating layer is thin enough (typically a few nanometers), electrons can tunnel from one ferromagnet into the other.

c) Parallel-Low resistance, Antiparallel-High resistance

WORKING PRINCIPLE

3. Race Domain Waals Over Nanowire

a) The most challenging part of the racetrack memory, It determines the speed, efficiency and accuracy.

b) Movement of the domain walls can be achieved by sending spin-polarized current (PULSED TO AVOID HEATING) 10E8A/cm-sq through the racetrack.

c) The dynamics of moving domain walls along the racetrack and controlling the position of the domains to a high degree of accuracy is under heavy research.

• The tiny domains slides along the notched nanowires at speeds greater than 350m/s @ 10E8A/cm-sq, offers a speed of 100 of gigabytes per second

CONSTRUCTIONAL OVERVIEW

A. Vertical racetrack (3D Density)

B. Horizontal racetrack (2D Density)

C. Storage Array( 100T Density More)

MATERIALSMaterial selection for the ferromagnetic racetrack material plays a large role in determining the dynamics of domain wall motion creation and movement.Two type1. Hard – ability to manipulate domain walls and its width eg: Iron, cobalt2. Soft - eg: Crystalline cobalt iron(CoFe)

ADVANTAGES,CHALLANGES AND FUTURE No mechanical movement compared to HDD so speed is high Low cost compared to SSD Provides more storage density than HDD Provides more reliability Can store data for long time Less power (In 2006, data centres in the US, required 6.9 Gigawatts of power and if we use

racetrack memory for storage needs it will cut the power significantly)

Recent challenges associated with this technology are current densities required to move domain walls and the reliability of domain wall motion. In early 2008, a 3-bit version was successfully demonstrated. For high current densities, giving rise to heat, pulsed current operation has been proposed to overcome issues. In addition, heat sinks are still used. Domain wall pinning via patterned racetracks has demonstrated limited success in reliably controlling multiple domain walls in a single racetrack.

Will become universal memory within next few years. Being non-volatility, high read/write speeds, and potential for scalable ultra dense memory make it an attractive type of memory and will replace all the HDD’s SSD’s and flash drive in the near future. It allow every consumer to carry data equivalent to a college library on small portable devices.

.

ThanksReferences:1. Memory on the racetrack , Stuart Parkin and See-Hun Yang, Nature

Nanotechnology 10, 195–198 (2015) doi:10.1038/nnano.2015.41 Published online 05 March 2015.

2. Article on Magnetic Racetrack Memory Storage by Derek M. Kita, Department of Materials Science and Engineering, MIT (Dated: February 3, 2014)

3. The World's Technological Capacity to Store, Communicate, and Compute Information, Martin Hilbert, et al. Science 332, 60 (2011); DOI: 10.1126/science.1200970

4. Book: Principles of Nanomagnetism by Guimarães, Alberto P. , Springer