quality and reliability report - marki microwave

215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 | [email protected]

Quality and Reliability Report

GaAs Schottky Diode Products

051-06444 rev C

Marki Microwave Inc.

215 Vineyard Court, Morgan Hill, CA 95037

Phone: (408) 778-4200 / FAX: (408) 778-4300 Email: [email protected]

Proprietary: This Document was originated by and is the property of Marki Microwave. Unauthorized disclosure is prohibited


1. Summary This document describes the qualification results for the GaAs Schottky Diode Process assembly and materials. The reliability data was obtained through the performance of specified accelerated stress tests described. This summary shows the devices are qualified and have completed qualification testing. This report meets Class H and Class K reliability requirements and is released for production. Products within family utilizing the same assembly materials and processes are qualified by similarity. In addition to the base part number, this report covers the L & H Barrier height options and the CH-2(chip) and S package option.

Base Part Number Description MMX-XXXX MMIC Mixer MMD-XXXX MMIC Double MMIQ-XXXX MMIC I/Q Mixer NLTL-XXX MMIC Non-Linear Transmission Line

2. Scope The qualification was performed to validate the reliability of GaAs Schottky Diode Process product assembly. The results of this report are not limited to the specific product described herein; they apply to a family of products designed at Marki Microwave which use the same assembly materials and processes.

3. Product Description and Information The GaAs Schottky Diode Process assemblies use Schottky diodes. This device consists of multiple junction connected where the diode junctions are formed to assure close matching of the electrical characteristics including forward voltage, capacitance, and slope resistance. These devices are usable on all Marki Microwave Hybrid products where applicable.

Assembly and Package Information Package Style: S Wire Bond: 0.8 mil Gold wire, thermo-compression bond Die Attach: Silver Epoxy Die Attach Semiconductor: GaAs

4. Product Qualification Requirements Qualification testing has been performed to validate the reliable operation of Marki Microwave GaAs Schottky Diode Process products. Tests are included to specifically address failure mechanisms related to elevated temperature, temperature cycling, constant acceleration and applied electrical bias.


4.1. Qualification Plan

Parts are available as Class H or as Class K, both 100% Tac Probed and Visually Inspected.

4.2 Class K Flow and Conditions

* MM1K-0320LCH-2 @ +/- 6.0mA MM1K-1140HCH-2 @ +/- 4.5mA MM2K-0530LCH-2 @ 17dBm @ 5GHz

Test Method Reference MIL-STD-883

Time / Cycles Qty Condition

Subgroup 1 1 Stabilization Bake Method 1008 24 Hours

10

Ta = 150oC 2 Temperature Cycling Method 1010 10 Cycles Condition C (-65oC, 150oC) 3 Constant Acceleration Method 2001 1 Minute Y1 3,000 g's Y1 direction 4 Burn-in Test Method 1015 320 Hours Ta = 125oC @de-rated max*5 Steady-State Life Method 1005 1000 Hours Ta = 125oC @de-rated max* 6 Test over Temperature Data Sheet NA -55oC, 25oC, 100oCSubgroup 2 Bond Pull Method 2011 > 2.3 Grams 10 0.8 mil Au wire Subgroup 3 Die shear, chip size 0.054” by 0.046” Method 2019 > 1.0kgf 2 24.84x 10(-4) Subgroup 4 SEM Method 2018 4

100% Tac Probe

Sub Group 1 Test over Temperature

Sub Group 2 Bond Pull

Sub Group 3 Die Shear

Sub Group 2 Bond Pull Sub Group 1

Stabilization Bake

Temperature Cycling Constant Acceleration

Burn-in Test Steady-State Life

Test over Temperature

Sub Group 3 Die Shear

Sub Group 4 SEM

100% Visual

Class H Class K


5.0 Qualification Results

5.1 Summary of Test Results

5.2 FIT Calculation λ (FIT) MTTF (hr) MTTF (yr) Use at 11.8 8.4E+07 9,622 25C44.5 2.2E+07 2561 40C148.2 0.67E+07 769 85C

*based on the complete family of mixer die in addition to those qualified to Class H and K

Test Method PN Lot Qty Date ResultsSubgroup 1 Class K

Stabilization Bake MM1K‐1140HCH‐2 901E 10 11/14/17 Pass

MM2K‐0530LCH‐2 202E 10 07/30/18 Pass

Temperature Cycling (TC) MM1K‐1140HCH‐2 901E 10 11/20/17 Pass

MM2K‐0530LCH‐2 202E 10 08/01/18 Pass

Constant Acceleration MM1K‐1140HCH‐2 901E 10 12/06/17 Pass

MM2K‐0530LCH‐2 202E 10 08/15/18 Pass

Burn‐in Test MM1K‐1140HCH‐2 901E 10 12/26/17 Pass

MM2K‐0530LCH‐2 202E 10 09/04/18 Pass

Steady‐State Life MM1K‐1140HCH‐2 901E 10 02/06/18 Pass

MM2K‐0530LCH‐2 202E 10 10/23/18 Pass

Subgroup 2

Bond Pull (4 die, 10 bond wires)

MM1K‐1140HCH‐2 901E‐74 10 02/07/18 Pass

MM2K‐0530LCH‐2 202E 10 04/12/18 Pass

MM1H‐0320LCH‐2 121D 10 01/25/18 Pass

MM1H‐1140HCH‐2 901E‐73 10 01/12/18 Pass

Subgroup 3

Die shear

MM1K‐1140HCH‐2 901E‐74 2 2/9/18 Pass

MM2K‐0530LCH‐2 202E 2 04/11/18 Pass

MM1H‐0320LCH‐2 121D 2 01/30/18 Pass

MM1H‐1140HCH‐2 901E‐73 2 01/18/18 Pass

Subgroup 4

SEM MM1K‐1140HCH‐2 901E 4 11/22/17 Pass

MM2K‐0530LCH‐2 202E 4 04/20/18 Pass


5.3 Typical Bond Pull

5.4 Typical Die Shear


5.5 Typical SEM MM1K-1140HCH-2

MM2K-0530LCH-2


5.5 Typical Delta Change after Life Test

MM1K-1140HCH-2 Pre Life Test Post Life Test

MM2K-0530LCH-2 Pre Life Test Post Life Test


5.6 Typical Conversion Loss Change over Temperature

MM1K-1140HCH-2

-55 25C 125C

MM2K-0530LCH-2 -55 25C 125C

5.4 Typical Vf Change over Temperature (for products that it can be measure on) 25C Post Life Test

‐55C 25C +100C Delta mV SN Vf+ Vf‐ Vf+ Vf‐ Vf+ Vf‐ Vf+ Vf‐ % % 1 0.77 0.772 0.698 0.698 0.626 0.624 ‐0.004 0 ‐0.57% 0.00% Control 2 0.773 0.769 0.699 0.696 0.624 0.624 ‐0.001 ‐0.003 ‐0.14% ‐0.43% Control 3 0.766 0.769 0.696 0.698 0.625 0.627 0.002 0.002 0.29% 0.29% 4 0.772 0.769 0.699 0.696 0.626 0.621 0.002 0.002 0.29% 0.29% 5 0.772 0.771 0.702 0.701 0.629 0.629 0.004 0.004 0.57% 0.57% 6 0.769 0.761 0.701 0.694 0.628 0.622 0.004 0.004 0.57% 0.58% 7 0.76 0.765 0.694 0.698 0.623 0.625 0.004 0.003 0.58% 0.43% 8 0.77 0.77 0.702 0.701 0.631 0.63 0.004 0.004 0.57% 0.57% 9 0.772 0.772 0.703 0.699 0.629 0.627 0.005 0.004 0.72% 0.58% 10 0.78 0.78 0.711 0.71 0.637 0.637 0.005 0.005 0.71% 0.71% 11 0.763 0.766 0.696 0.7 0.627 0.627 0.004 0.004 0.58% 0.57% 12 0.777 0.779 0.713 0.715 0.645 0.647 0.003 0.003 0.42% 0.42% Ave ‐55C 25C 100C mV 0.770 0.701 0.630


6. Analysis of Results

6.1 Stabilization Bake / High Temperature Storage Life Description The high temperature storage test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure mechanisms and time-to failure distributions of solid state electronic devices. During the test, accelerated stress temperatures are used without electrical conditions applied. MIL-STD-883 Method 1032 is used as a guideline. Results No evidence of thermally activated failures were found during this test.

6.2 Temperature Cycling Description Unbiased devices are exposed to sudden extreme temperature changes. This accelerated stress test simulates equipment that is operated intermittently at low temperatures. Devices are exposed to a high temperature for a time long enough to assure a stable temperature is reached by all the samples (typically 10 to 15 minutes) and then transferred to a low temperature and held for the same length of time. After temperature cycling is completed. MIL-STD-883 Method 1010 is used as a guideline. Results No failures were observed either visually or electrically. This indicates that the mechanical assembly of the device can withstand extreme temperature changes with no degradation in performance or construction. It also indicates that no problems exist due to the internal mechanical stresses between the Die attach, Wire bond, Package and die.

6.3 Constant Acceleration Description The constant acceleration test is used to determine the effect on semiconductor devices of a centrifugal force. This test is an accelerated test designed to indicate types of structural and mechanical weaknesses not necessarily detected in shock and vibration tests. MIL-STD-883 Method 2001 is used as a guideline. Results No failures were observed. This indicates that the structural integrity of the mechanical assembly of the device is sound.

6.4 Burn In Description The burn-in test is performed for the purpose of screening or eliminating marginal devices, those with inherent defects or defects resulting from manufacturing aberrations which cause time and stress dependent failures. In the absence of burn-in, these defective devices would be expected to result in infant mortality or early lifetime failures under use conditions. Therefore, it is the intent of this screen to stress microcircuits at or above maximum rated operating conditions or to apply equivalent screening conditions, which will reveal time and stress dependent failure modes with equal or greater sensitivity. Results Pass

6.4 High Temperature Operating Life (HTOL) Description This stress is used to identify any failure mechanisms accelerated by DC bias and elevated temperature that could occur during the lifetime of the product under test. Typical failure mechanisms that may occur include gate oxide breakdown, ionic contamination, and electromigration for silicon (Si) technologies, or gate sinking, ohmic contact degradation, and trap generation for gallium arsenide (GaAs) and gallium nitride (GaN) technologies. Process and/or assembly defects may be detected by this test in either technology. Devices are biased and operated at junction temperatures between 125°C and 160°C. MIL-STD-883 Method 1015 is used as a guideline. Results No evidence of wearout failure was found during this test. The results indicate that the devices are stable and reliable. 7.0 Reference Documents

7.1 MIL_STD-883-1008 “High Temperature Storage Life” 7.2 MIL_STD-883-1010 “Temperature Cycling” 7.3 MIL_STD-883-2001 “Constant Acceleration” 7.4 MIL_STD-883-1015 “Burn-in” 7.4 MIL_STD-883-1005 “Steady Sate Life” 7.5 MIL_STD-883-2011 “Bond Pull” 7.6 MIL_STD-883-2019 “Die Shear”


7.7 MIL_STD-883-2018 “Scanning Electron Microscope SEM” 7.8 MIL-STD-883 “Department of Defense Test Method Standard, Microcircuit” 7.9 MIL-PRF-19500 “Performance Specification – Semiconductor Devices” 7.10 MIL-PRF-38534 “Performance Specification - Hybrid Microcircuits”

Revision History Rev A Feb 16, 2018 Rev B July 9, 2018 Rev C Oct 23, 2018 Copyright © 2018, Marki Microwave, Inc. All rights reserved. No part of this document may be reproduced in any form or means, without express permission from Marki Microwave. Marki Microwave Inc. reserves the right to make changes in its products, product flows, or information contained herein without notice. Marki Microwave makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Marki Microwave assume any liability whatsoever arising out of the use of or application of any product. No license for use of intellectual property (patents, copyrights, or other rights) owned by Marki Microwave or other parties is granted or implied.