qd laser - company intro pres'n (16 pp)
TRANSCRIPT
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Company IntroductionMarch, 2012
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Overview
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Laser Diode Chip Products
Company
QD Laser, Inc. is a leading provider of highly efficient semiconductor lasersolutions for Telecom/Datacom, consumer electronics, and industrial use.
We distinguish ourselves in the marketplace by our product values. Finely tuned wavelengths from 532, 1064 to 1310nm High temperature operation and stability Mass production capability on GaAs platform
Our products with reliability help our customers create new laser light marketsin a variety of applications such as LAN/FTTH, optical interconnection, material
processing, sensing, laser projection, etc.
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Quantum dot technology developed by Fujitsu and Univ. of Tokyo collaboration
Spin-off venture company from Fujitsu
R&D collaboration with Fujitsu Lab. and University of TokyoSubsidy from NEDO under Technology Innovation Program
Academic Industry collaboration
National Project (2002-2006)
Spin off & Investment
InvestNEDO, JAPAN Subsidy
Business Development
Mizuho Capital Co., Ltd.
Mitsui & Co., Ltd.
University of Tokyo
Prof. Arakawa
Fujitsu Limited
Fujitsu Laboratories Ltd.
IT Program of MEXT, JAPANPhotonic Network of METI, JAPAN
Origin and Support
NEDO: New Energy and Industrial Technology Development Organization
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Locations
Headquarters: THINK in Kawasaki city, Japan
R&D Center: Fujitsu Laboratories Ltd. in Atsugi city, Japan
Corporate ManagementSales and MarketingDevice developmentProduction
MBE reactors for crystal growth
THINKTechno Hub Innovation Kawasaki
MBE :Molecular Beam Epitaxy
THINK
Fujitsu Laboratories Ltd.
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Company Name QD Laser, Inc.
HeadquatersKeihin Bldg. 1F, 1-1 Minamiwataridacho Kawasaki-ku, Kawasaki,Kanagawa 210-0855 JapanTelephone: +81-44-333-3338, Fax: +81-44-333-3308
R&D Center 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197 Japan
Founded April, 2006
Capital 1,353.2 Million Yen (As of February 29, 2012)
Business Area Planning, Designing, Manufacturing and Sales ofsemiconductor laser products
Number of Employee 25 (As of February 29, 2012)
ManagementSeiichi Yoshikawa, ChairmanDr. Mitsuru Sugawara, President & CEO
Major ShareholdersFujitsu Ltd. (Corporate Fund)Mitsui & Co. Global Investment Ltd.
Mizuho Capital Co., Ltd.E-mail [email protected]
URL http://www.qdlaser.com
Company Outline
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History
Jan. 2012 Commercialized acquired ISO 9001:2008 Certification
Jan. 2012 Commercialized high-power (> 100 mW), 532 nm-wavelength Compact Green Laser
Module with High Efficiency and High-Speed Modulation Capability
Jan. 2012 Commercialized development of Compact (0.5 cc) Yellow-Green and Orange Laser
Modules with High-speed Modulation Capability
Commercialized 1064nm DFB Laser Modules with Excellent Single-Mode
Oscillation Property
Oct. 2010 Won the Minister of Economy, Trade and Industry Prize in Green IT Award 2010
Apr. 2010 Headquarter moved to Kawasaki, Kanagawa
Commercialized quantum dot lasers featuring 10Gbps high-speed operationfor optical telecom application
Jan. 2009 Selected by the IEEE Spectrum Magazine as the Technology Winner in 2009 for
Telecommunications
Dec. 2008 Raised JPY 700 million funded by Mizuho Capital Co., Ltd. and existing investors
Succeeded in the world first development of quantum dot lasers which work in
-40 to 100 degree C
Jun. 2007 Won a Japan prime minister award in terms of the venture incubation by involvingindustrial, academic and national party collaborations
Sep. 2006 Won the Wall Street Journal Technology Runner-up Award 2006
Apr. 2006 Established QD Laser, Inc. capitally funded by Fujitsu Ltd. and Mitsui & Co. Global
Investment Ltd.
Mar. 2009
Feb. 2008
Apr. 2011
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Display
Optical interconnectio
Telecom/Datacom
Mobile Projection
828nm
Life Science
DFBFP/DFB
FP/DFB
660nm
Material processing
MeasurementOptical CT
High temperaturcommunicationand sensing
Motion sensing
Factory automationLife science
Sensing
Common values of all our products
Finely tuned wavelength from 532, 1064 to 1310 nm
High temperature operation and stability Mass production capability on GaAs platform
Applications
Core Competence
OCT
Life science
700532 1064 1310 1490 1550850 1180590
Wavelength (nm)
Laser on GaAs substrate
Consumer electronics and Industrial use Telecom/Datacom
FutureFuture
+SHG
Present
DFBFP
1064nm
DFB FTTH/LANGEPONGPONEthernet
Green Gap
Green ,Yellow,Orange
DFB
DFB 532nm
532-590nm
FP/DFB
1270-1310nm
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GaAs QD and QWwafers
Laser chips
Laser packages
QD Laser, Inc. GaAs foundry / Partner
Customers
CD/DVD laser fab.
Mass production technologywith the economy of scale
Inhouse state-of-the-art
GaAs wafer and DFB grating technology
Crystal growth MBE reactors
DFB Grating
Technology for Mass Production
Formation of Qunatum Dot
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Products
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Product Portfolio - Optical Communication/Wafer
Features
Telecom, Datacom & InterconnectionApplication
Field
1270nm DFB laser1310nm FP laser
Quantum Dot LasersTemperature Insensitivity
Up to 10 GbpsTO-56 CAN
Model #
Laboratory Research
Quantum Dot (QD) Epitaxial Wafersof 1300nm
High Density and Uniformity3 inch Wafer on GaAs
Surface of QD
QLF1339-AAUp to 2.5Gbps
QLD123BUp to 10Gbps
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Product Portfolio Industrial Use
Features
ApplicationField
1118nm DFB laserby QW
1064/1053nm DFB laserby QW
14 pin Butterfly PackageEmbedded Optical IsolatorNarrow Spectral Linewidth
Short Pulse Operation
Red : FA, Sensing
Measurement
660nm FP laserby QW
Monitor PDTO-56 CAN
QLD10611064nm, 30mWQLD1061-AC1064nm, 100mWQLD10621053nm, 30mW
QLD1161: 30mWModel #
Yellow with SHG
for Life Science
QLF063A: 100mWAnode common
QLF063D: 100mWCathode common
QD: Quantum DotQW: Quantum Well
1300nm High TempFP laser
Communication & Sensingin Plant, Desert
Oil and Gas Exploration
QLF1335-AD
Up to150C
QLF1335-AE
Up to 175C
Quantum Dot Structure>150C operation
TO-56CAN
Sensing, Seed Light
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Features
ApplicationField
Product Portfolio Consumer Elec.
532nm Green laser modulewith DFB Technology
By QD/QW
Compact SizeDirect ModulationNarrow Linewidth
Low Power Consumption
Display, MeasurementLife Science
Model # QLD0592Pure Green laser module, 5mWQLD0593Pure Green laser module 50mW
QD: Quantum Dot, QW: Quantum Well
*under development
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1064nm DFB Laser
QLD1061
1064nm quantum well DFB laser in 14pin butterfly package with optical isolator
High output power > 30mW Stable single-mode oscillation CW and short-pulsed operations
Applications : seed light of fiber laser, gas sensing, wavelengthconversion with nonlinear optical devices, etc.
CWCW
1300 Q t D t FP L f
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QLD1335-AD
1300nm quantum dot FP laser in TO-56 CAN package
Operation up to 150C
Applications: communication and sensing in harsh environments such as plants, deserts,gas and oil exploring, etc.
CW
Quantum Dot (0 Dimension)
EF
Electron Energy
Electrons Concentrateinto Ground State
Immovable! Small temperature
Sensitibity
Electron
1300nm Quantum Dot FP Laser forHigh Temperature Environments
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Extremely High Temperature (220C) Continuous-Wave Operation of1300nm-range Quantum Dot Lasers
Presented at CLEO/Europe-EQEC 2011 Conference, PDA.1 For data transmission and sensing in harsh environments like underground exploration
R&D Topics
Very uniform, high-density QDs were realizedby QDLs leading-edge MBE technology.
L-Icharacteristics of the QD laser
from 30 to 220C.
Very uniform, high-density QDssignificantly increased gain, realizingextremely high temperature operation astheoretically-predicted.
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Emai l : info@qd laser.co m
www.qdlaser .com
Thank you!