qd laser - company intro pres'n (16 pp)

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  • 8/2/2019 QD Laser - Company Intro Pres'n (16 Pp)

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    Company IntroductionMarch, 2012

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    Overview

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    Laser Diode Chip Products

    Company

    QD Laser, Inc. is a leading provider of highly efficient semiconductor lasersolutions for Telecom/Datacom, consumer electronics, and industrial use.

    We distinguish ourselves in the marketplace by our product values. Finely tuned wavelengths from 532, 1064 to 1310nm High temperature operation and stability Mass production capability on GaAs platform

    Our products with reliability help our customers create new laser light marketsin a variety of applications such as LAN/FTTH, optical interconnection, material

    processing, sensing, laser projection, etc.

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    Quantum dot technology developed by Fujitsu and Univ. of Tokyo collaboration

    Spin-off venture company from Fujitsu

    R&D collaboration with Fujitsu Lab. and University of TokyoSubsidy from NEDO under Technology Innovation Program

    Academic Industry collaboration

    National Project (2002-2006)

    Spin off & Investment

    InvestNEDO, JAPAN Subsidy

    Business Development

    Mizuho Capital Co., Ltd.

    Mitsui & Co., Ltd.

    University of Tokyo

    Prof. Arakawa

    Fujitsu Limited

    Fujitsu Laboratories Ltd.

    IT Program of MEXT, JAPANPhotonic Network of METI, JAPAN

    Origin and Support

    NEDO: New Energy and Industrial Technology Development Organization

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    Locations

    Headquarters: THINK in Kawasaki city, Japan

    R&D Center: Fujitsu Laboratories Ltd. in Atsugi city, Japan

    Corporate ManagementSales and MarketingDevice developmentProduction

    MBE reactors for crystal growth

    THINKTechno Hub Innovation Kawasaki

    MBE :Molecular Beam Epitaxy

    THINK

    Fujitsu Laboratories Ltd.

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    Company Name QD Laser, Inc.

    HeadquatersKeihin Bldg. 1F, 1-1 Minamiwataridacho Kawasaki-ku, Kawasaki,Kanagawa 210-0855 JapanTelephone: +81-44-333-3338, Fax: +81-44-333-3308

    R&D Center 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197 Japan

    Founded April, 2006

    Capital 1,353.2 Million Yen (As of February 29, 2012)

    Business Area Planning, Designing, Manufacturing and Sales ofsemiconductor laser products

    Number of Employee 25 (As of February 29, 2012)

    ManagementSeiichi Yoshikawa, ChairmanDr. Mitsuru Sugawara, President & CEO

    Major ShareholdersFujitsu Ltd. (Corporate Fund)Mitsui & Co. Global Investment Ltd.

    Mizuho Capital Co., Ltd.E-mail [email protected]

    URL http://www.qdlaser.com

    Company Outline

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    History

    Jan. 2012 Commercialized acquired ISO 9001:2008 Certification

    Jan. 2012 Commercialized high-power (> 100 mW), 532 nm-wavelength Compact Green Laser

    Module with High Efficiency and High-Speed Modulation Capability

    Jan. 2012 Commercialized development of Compact (0.5 cc) Yellow-Green and Orange Laser

    Modules with High-speed Modulation Capability

    Commercialized 1064nm DFB Laser Modules with Excellent Single-Mode

    Oscillation Property

    Oct. 2010 Won the Minister of Economy, Trade and Industry Prize in Green IT Award 2010

    Apr. 2010 Headquarter moved to Kawasaki, Kanagawa

    Commercialized quantum dot lasers featuring 10Gbps high-speed operationfor optical telecom application

    Jan. 2009 Selected by the IEEE Spectrum Magazine as the Technology Winner in 2009 for

    Telecommunications

    Dec. 2008 Raised JPY 700 million funded by Mizuho Capital Co., Ltd. and existing investors

    Succeeded in the world first development of quantum dot lasers which work in

    -40 to 100 degree C

    Jun. 2007 Won a Japan prime minister award in terms of the venture incubation by involvingindustrial, academic and national party collaborations

    Sep. 2006 Won the Wall Street Journal Technology Runner-up Award 2006

    Apr. 2006 Established QD Laser, Inc. capitally funded by Fujitsu Ltd. and Mitsui & Co. Global

    Investment Ltd.

    Mar. 2009

    Feb. 2008

    Apr. 2011

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    Display

    Optical interconnectio

    Telecom/Datacom

    Mobile Projection

    828nm

    Life Science

    DFBFP/DFB

    FP/DFB

    660nm

    Material processing

    MeasurementOptical CT

    High temperaturcommunicationand sensing

    Motion sensing

    Factory automationLife science

    Sensing

    Common values of all our products

    Finely tuned wavelength from 532, 1064 to 1310 nm

    High temperature operation and stability Mass production capability on GaAs platform

    Applications

    Core Competence

    OCT

    Life science

    700532 1064 1310 1490 1550850 1180590

    Wavelength (nm)

    Laser on GaAs substrate

    Consumer electronics and Industrial use Telecom/Datacom

    FutureFuture

    +SHG

    Present

    DFBFP

    1064nm

    DFB FTTH/LANGEPONGPONEthernet

    Green Gap

    Green ,Yellow,Orange

    DFB

    DFB 532nm

    532-590nm

    FP/DFB

    1270-1310nm

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    GaAs QD and QWwafers

    Laser chips

    Laser packages

    QD Laser, Inc. GaAs foundry / Partner

    Customers

    CD/DVD laser fab.

    Mass production technologywith the economy of scale

    Inhouse state-of-the-art

    GaAs wafer and DFB grating technology

    Crystal growth MBE reactors

    DFB Grating

    Technology for Mass Production

    Formation of Qunatum Dot

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    Products

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    Product Portfolio - Optical Communication/Wafer

    Features

    Telecom, Datacom & InterconnectionApplication

    Field

    1270nm DFB laser1310nm FP laser

    Quantum Dot LasersTemperature Insensitivity

    Up to 10 GbpsTO-56 CAN

    Model #

    Laboratory Research

    Quantum Dot (QD) Epitaxial Wafersof 1300nm

    High Density and Uniformity3 inch Wafer on GaAs

    Surface of QD

    QLF1339-AAUp to 2.5Gbps

    QLD123BUp to 10Gbps

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    Product Portfolio Industrial Use

    Features

    ApplicationField

    1118nm DFB laserby QW

    1064/1053nm DFB laserby QW

    14 pin Butterfly PackageEmbedded Optical IsolatorNarrow Spectral Linewidth

    Short Pulse Operation

    Red : FA, Sensing

    Measurement

    660nm FP laserby QW

    Monitor PDTO-56 CAN

    QLD10611064nm, 30mWQLD1061-AC1064nm, 100mWQLD10621053nm, 30mW

    QLD1161: 30mWModel #

    Yellow with SHG

    for Life Science

    QLF063A: 100mWAnode common

    QLF063D: 100mWCathode common

    QD: Quantum DotQW: Quantum Well

    1300nm High TempFP laser

    Communication & Sensingin Plant, Desert

    Oil and Gas Exploration

    QLF1335-AD

    Up to150C

    QLF1335-AE

    Up to 175C

    Quantum Dot Structure>150C operation

    TO-56CAN

    Sensing, Seed Light

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    Features

    ApplicationField

    Product Portfolio Consumer Elec.

    532nm Green laser modulewith DFB Technology

    By QD/QW

    Compact SizeDirect ModulationNarrow Linewidth

    Low Power Consumption

    Display, MeasurementLife Science

    Model # QLD0592Pure Green laser module, 5mWQLD0593Pure Green laser module 50mW

    QD: Quantum Dot, QW: Quantum Well

    *under development

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    1064nm DFB Laser

    QLD1061

    1064nm quantum well DFB laser in 14pin butterfly package with optical isolator

    High output power > 30mW Stable single-mode oscillation CW and short-pulsed operations

    Applications : seed light of fiber laser, gas sensing, wavelengthconversion with nonlinear optical devices, etc.

    CWCW

    1300 Q t D t FP L f

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    QLD1335-AD

    1300nm quantum dot FP laser in TO-56 CAN package

    Operation up to 150C

    Applications: communication and sensing in harsh environments such as plants, deserts,gas and oil exploring, etc.

    CW

    Quantum Dot (0 Dimension)

    EF

    Electron Energy

    Electrons Concentrateinto Ground State

    Immovable! Small temperature

    Sensitibity

    Electron

    1300nm Quantum Dot FP Laser forHigh Temperature Environments

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    Extremely High Temperature (220C) Continuous-Wave Operation of1300nm-range Quantum Dot Lasers

    Presented at CLEO/Europe-EQEC 2011 Conference, PDA.1 For data transmission and sensing in harsh environments like underground exploration

    R&D Topics

    Very uniform, high-density QDs were realizedby QDLs leading-edge MBE technology.

    L-Icharacteristics of the QD laser

    from 30 to 220C.

    Very uniform, high-density QDssignificantly increased gain, realizingextremely high temperature operation astheoretically-predicted.

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    Emai l : info@qd laser.co m

    www.qdlaser .com

    Thank you!