psmn025-100d n-channel trenchmos siliconmax standard level … · 2017. 4. 20. · psmn025-100d all...
TRANSCRIPT
-
1. Product profile
1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low thermal resistance
Low conduction losses due to low on-state resistance
Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
DC-to-DC converters Switched-mode power supplies
1.4 Quick reference data
PSMN025-100DN-channel TrenchMOS SiliconMAX standard level FETRev. 4 — 12 January 2012 Product data sheet
Table 1. Quick reference dataSymbol Parameter Conditions Min Typ Max UnitVDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V
ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 4
- - 47 A
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 150 W
Static characteristicsRDSon drain-source on-state
resistanceVGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12
- 22 25 mΩ
Dynamic characteristicsQGD gate-drain charge VGS = 10 V; ID = 45 A; VDS = 80 V;
Tj = 25 °C; see Figure 13- 25 - nC
-
Nexperia PSMN025-100DN-channel TrenchMOS SiliconMAX standard level FET
2. Pinning information
[1] It is not possible to make connection to pin 2.
3. Ordering information
Table 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol1 G gate
SOT428 (DPAK)
2 D drain[1]
3 S source
mb D mounting base; connected to drain
3
2
mb
1
S
D
G
mbb076
Table 3. Ordering informationType number Package
Name Description VersionPSMN025-100D DPAK plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)SOT428
© Nexperia B.V. 2017. All rights reservedPSMN025-100D All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 12 January 2012 2 of 14
-
Nexperia PSMN025-100DN-channel TrenchMOS SiliconMAX standard level FET
4. Limiting values
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max UnitVDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V
VDGR drain-gate voltage Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ - 100 V
VGS gate-source voltage -20 20 V
ID drain current VGS = 10 V; Tmb = 100 °C; see Figure 1 - 33 A
VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4
- 47 A
IDM peak drain current pulsed; Tmb = 25 °C; see Figure 4 - 188 A
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 150 W
Tstg storage temperature -55 175 °C
Tj junction temperature -55 175 °C
Source-drain diodeIS source current Tmb = 25 °C - 47 A
ISM peak source current pulsed; Tmb = 25 °C - 188 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energyVGS = 10 V; Tj(init) = 25 °C; ID = 40 A; Vsup ≤ 25 V; unclamped; tp = 100 µs; RGS = 50 Ω
- 260 mJ
IAS non-repetitive avalanche current Vsup ≤ 25 V; VGS = 10 V; Tj(init) = 25 °C; RGS = 50 Ω; unclamped; see Figure 3
- 47 A
Fig 1. Continuous drain current as a function of mounting base temperature
Fig 2. Normalized total power dissipation as a function of mounting base temperature
Normalised Current Derating, ID (%)
0
10
20
30
40
50
60
70
80
90
100
0 25 50 75 100 125 150 175Mounting Base temperature, Tmb (C)
lma016 Normalised Power Derating, PD (%)
0
10
20
30
40
50
60
70
80
90
100
0 25 50 75 100 125 150 175Mounting Base temperature, Tmb (C)
lma015
© Nexperia B.V. 2017. All rights reservedPSMN025-100D All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 12 January 2012 3 of 14
-
Nexperia PSMN025-100DN-channel TrenchMOS SiliconMAX standard level FET
Fig 3. Maximum permissible non-repetitive avalanche current as a function of avalanche time
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
10
100
0.001 0.01 0.1 1 10
Avalanche time, tAV (ms)
Maximum Avalanche Current, IAS (A)
Tj prior to avalanche = 150 C
25 C
lma029
003aah007
10-1
1
10
102
103
1 10 102 103VDS (V)
ID(A)
Limit RDSon = VDS / ID
DC
100 μs
10 ms
tp =10 μs
100 ms
© Nexperia B.V. 2017. All rights reservedPSMN025-100D All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 12 January 2012 4 of 14
-
Nexperia PSMN025-100DN-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5. Thermal characteristicsSymbol Parameter Conditions Min Typ Max UnitRth(j-mb) thermal resistance from junction
to mounting basesee Figure 5 - - 1 K/W
Rth(j-a) thermal resistance from junction to ambient
SOT428 package ; printed-circuit board mounted ; minimum footprint
- 50 - K/W
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
0.001
0.01
0.1
1
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
Pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tpD = tp/TD
P
T
lma018
© Nexperia B.V. 2017. All rights reservedPSMN025-100D All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 12 January 2012 5 of 14
-
Nexperia PSMN025-100DN-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6. CharacteristicsSymbol Parameter Conditions Min Typ Max UnitStatic characteristicsV(BR)DSS drain-source breakdown
voltageID = 0.25 mA; VGS = 0 V; Tj = -55 °C 89 - - V
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 100 - - V
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 9
1 - - V
ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 9; see Figure 10
2 3 4 V
ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 9
- - 6 V
IDSS drain leakage current VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.05 10 µA
VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA
IGSS gate leakage current VGS = 10 V; VDS = 0 V; Tj = 25 °C - 0.02 100 nA
VGS = -10 V; VDS = 0 V; Tj = 25 °C - 0.02 100 nA
RDSon drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 11
- - 68 mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12
- 22 25 mΩ
Dynamic characteristicsQG(tot) total gate charge ID = 45 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C; see Figure 13- 61 - nC
QGS gate-source charge - 13 - nC
QGD gate-drain charge - 25 - nC
Ciss input capacitance VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 14
- 2600 - pF
Coss output capacitance - 340 - pF
Crss reverse transfer capacitance - 195 - pF
td(on) turn-on delay time VDS = 50 V; RL = 1.8 Ω; VGS = 10 V; RG(ext) = 5.6 Ω; Tj = 25 °C
- 18 - ns
tr rise time - 72 - ns
td(off) turn-off delay time - 69 - ns
tf fall time - 58 - ns
LD internal drain inductance measured from tab to centre of die ; Tj = 25 °C
- 3.5 - nH
LS internal source inductance measured from source lead to source bond pad ; Tj = 25 °C
- 7.5 - nH
Source-drain diodeVSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 15- 0.87 1.2 V
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 25 V; Tj = 25 °C
- 82 - ns
Qr recovered charge - 0.26 - µC
© Nexperia B.V. 2017. All rights reservedPSMN025-100D All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 12 January 2012 6 of 14
-
Nexperia PSMN025-100DN-channel TrenchMOS SiliconMAX standard level FET
Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical function of drain-source voltage; typical values
Fig 7. Forward transconductance as a function of drain current; typical values
Fig 8. Transfer characteristics: drain current as a function of gate-source voltage; typical values
Fig 9. Gate-source threshold voltage as a function of junction temperature
0
5
10
15
20
25
30
35
40
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2Drain-Source Voltage, VDS (V)
4 V
Drain Current, ID (A)
4.6 V
Tj = 25 CVGS = 10V
4.8 V
8 V
4.4 V
5 V
6 V
4.2 V
lma019
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25 30 35 40 45 50Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
175 C
VDS > ID X RDS(ON)
lma022
0
5
10
15
20
25
30
35
40
45
50
0 1 2 3 4 5 6
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS > ID X RDS(ON)
Tj = 25 C175 C
lma021Threshold Voltage, VGS(TO) (V)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Junction Temperature, Tj (C)
typical
maximum
minimum
lma024
© Nexperia B.V. 2017. All rights reservedPSMN025-100D All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 12 January 2012 7 of 14
-
Nexperia PSMN025-100DN-channel TrenchMOS SiliconMAX standard level FET
Fig 10. Sub-threshold drain current as a function of gate-source voltage
Fig 11. Normalized drain source on-state resistance factor as a function of junction temperature
Fig 12. Drain-source on-state resistance as a function of drain current; typical values
Fig 13. Gate-source voltage as a function of gate charge; typical values
Drain current, ID (A)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5Gate-source voltage, VGS (V)
minimum
typical
maximum
lma025 Normalised On-state Resistance
0.50.70.91.11.31.51.71.92.12.32.52.72.9
-60 -40 -20 0 20 40 60 80 100 120 140 160 180Junction temperature, Tj (C)
lma023
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0 2 4 6 8 10 12 14 16 18 20Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
VGS = 10V
Tj = 25 C
6V8 V
4.2 V 4.8 V
5 V
4.4 V4 V
4.6 V
lma020
0123456789
101112131415
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 45 A
Tj = 25 CVDD = 20 V
VDD = 80 V
lma027
© Nexperia B.V. 2017. All rights reservedPSMN025-100D All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 12 January 2012 8 of 14
-
Nexperia PSMN025-100DN-channel TrenchMOS SiliconMAX standard level FET
Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
Fig 15. Source current as a function of source-drain voltage; typical values
10
100
1000
10000
0.1 1 10 100Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
lma026
0
5
10
15
20
25
30
35
40
45
50
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
175 C
VGS = 0 Vlma028
© Nexperia B.V. 2017. All rights reservedPSMN025-100D All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 12 January 2012 9 of 14
-
Nexperia PSMN025-100DN-channel TrenchMOS SiliconMAX standard level FET
7. Package outline
Fig 16. Package outline SOT428 (DPAK)
REFERENCESOUTLINEVERSION
EUROPEANPROJECTION
ISSUE DATEIEC JEDEC JEITA
SOT428 SC-63TO-252
SOT428
06-02-1406-03-16
DIMENSIONS (mm are the original dimensions)
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
A
2
1 3
E1
D2
D1
HD
LL1
L2
e1
e
mountingbase
w AMb
E
b2
b1 c
A1
y
0 5 10 mm
scale
UNIT
mm 0.930.465.465.00
0.560.20
6.225.98
6.736.47
10.49.6
2.952.55
A1
2.382.22
A b2
1.10.9
b1 e1
0.890.71
b c D1
0.90.5
L2E e
2.285 4.574.0
D2min
4.45
E1min
0.5
L1min
HD L w
0.2
ymax
0.2
A
© Nexperia B.V. 2017. All rights reservedPSMN025-100D All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 12 January 2012 10 of 14
-
Nexperia PSMN025-100DN-channel TrenchMOS SiliconMAX standard level FET
8. Revision history
Table 7. Revision historyDocument ID Release date Data sheet status Change notice SupersedesPSMN025-100D v.4 20120112 Product data sheet - PSMN025-100D v.3
Modifications: • Various changes to content.PSMN025-100D v.3 20081120 Product data sheet - PSMN025-100D v.2
© Nexperia B.V. 2017. All rights reservedPSMN025-100D All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 12 January 2012 11 of 14
-
Nexperia PSMN025-100DN-channel TrenchMOS SiliconMAX standard level FET
9. Legal information
9.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com.
9.2 DefinitionsPreview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet.
9.3 DisclaimersLimited warranty and liability — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Nexperia takes no responsibility for the content in this document if provided by an information source outside of Nexperia.
In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
Document status [1] [2] Product status [3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
© Nexperia B.V. 2017. All rights reservedPSMN025-100D All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 12 January 2012 12 of 14
-
Nexperia PSMN025-100DN-channel TrenchMOS SiliconMAX standard level FET
Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer.
No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications .
Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.
9.4 TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
10. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: [email protected]
© Nexperia B.V. 2017. All rights reservedPSMN025-100D All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 4 — 12 January 2012 13 of 14
-
Nexperia PSMN025-100DN-channel TrenchMOS SiliconMAX standard level FET
11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .11.1 General description . . . . . . . . . . . . . . . . . . . . . .11.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .11.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .11.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .12 Pinning information. . . . . . . . . . . . . . . . . . . . . . .23 Ordering information. . . . . . . . . . . . . . . . . . . . . .24 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .35 Thermal characteristics . . . . . . . . . . . . . . . . . . .56 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .67 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .108 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 119 Legal information. . . . . . . . . . . . . . . . . . . . . . . .129.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .129.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .129.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .129.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .1310 Contact information. . . . . . . . . . . . . . . . . . . . . .13
© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 12 January 2012
1. Product profile1.1 General description1.2 Features and benefits1.3 Applications1.4 Quick reference data
2. Pinning information3. Ordering information4. Limiting values5. Thermal characteristics6. Characteristics7. Package outline8. Revision history9. Legal information9.1 Data sheet status9.2 Definitions9.3 Disclaimers9.4 Trademarks
10. Contact information11. Contents
/ColorImageDict > /JPEG2000ColorACSImageDict > /JPEG2000ColorImageDict > /AntiAliasGrayImages false /CropGrayImages true /GrayImageMinResolution 150 /GrayImageMinResolutionPolicy /OK /DownsampleGrayImages true /GrayImageDownsampleType /Bicubic /GrayImageResolution 300 /GrayImageDepth -1 /GrayImageMinDownsampleDepth 2 /GrayImageDownsampleThreshold 1.50000 /EncodeGrayImages true /GrayImageFilter /DCTEncode /AutoFilterGrayImages true /GrayImageAutoFilterStrategy /JPEG /GrayACSImageDict > /GrayImageDict > /JPEG2000GrayACSImageDict > /JPEG2000GrayImageDict > /AntiAliasMonoImages false /CropMonoImages true /MonoImageMinResolution 1200 /MonoImageMinResolutionPolicy /OK /DownsampleMonoImages true /MonoImageDownsampleType /Bicubic /MonoImageResolution 1200 /MonoImageDepth -1 /MonoImageDownsampleThreshold 1.50000 /EncodeMonoImages true /MonoImageFilter /CCITTFaxEncode /MonoImageDict > /AllowPSXObjects false /CheckCompliance [ /None ] /PDFX1aCheck false /PDFX3Check false /PDFXCompliantPDFOnly false /PDFXNoTrimBoxError true /PDFXTrimBoxToMediaBoxOffset [ 0.00000 0.00000 0.00000 0.00000 ] /PDFXSetBleedBoxToMediaBox true /PDFXBleedBoxToTrimBoxOffset [ 0.00000 0.00000 0.00000 0.00000 ] /PDFXOutputIntentProfile (None) /PDFXOutputConditionIdentifier () /PDFXOutputCondition () /PDFXRegistryName () /PDFXTrapped /False
/CreateJDFFile false /Description >>> setdistillerparams> setpagedevice