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PSMN020-30MLCN-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33using TrenchMOS Technology4 September 2012 Product data sheet

1. Product profile

1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.

1.2 Features and benefits• Low parasitic inductance and resistance• Optimised for 4.5V Gate drive utilising Superjunction technology• Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads

1.3 Applications• DC-to-DC converters• Load switching• Synchronous buck regulator

1.4 Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj = 25 °C - - 30 V

ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 - - 31.8 A

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 33 W

Tj junction temperature -55 - 175 °C

Static characteristics

VGS = 4.5 V; ID = 5 A; Tj = 25 °C;Fig. 10

- 20.5 27 mΩRDSon drain-source on-stateresistance

VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 10 - 14.7 18.1 mΩ

Dynamic characteristics

QGD gate-drain charge VGS = 4.5 V; ID = 5 A; VDS = 15 V;Fig. 12; Fig. 13

- 1.7 - nC

QG(tot) total gate charge VGS = 4.5 V; ID = 5 A; VDS = 15 V;Fig. 12; Fig. 13

- 4.6 - nC

© Nexperia B.V. 2017. All rights reserved

Nexperia PSMN020-30MLCN-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using

TrenchMOS Technology

PSMN020-30MLC All information provided in this document is subject to legal disclaimers.

Product data sheet 4 September 2012 2 / 13

2. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 S source

2 S source

3 S source

4 G gate

mb D mounting base; connected todrain

1 432

LFPAK33 (SOT1210)

S

D

G

mbb076

3. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

PSMN020-30MLC LFPAK33 Plastic single ended surface mounted package (LFPAK33); 4leads

SOT1210

4. Limiting valuesTable 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj = 25 °C - 30 V

VGS gate-source voltage -20 20 V

VGS = 10 V; Tmb = 25 °C; Fig. 1 - 31.8 AID drain current

VGS = 10 V; Tmb = 100 °C; Fig. 1 - 22.5 A

IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4 - 127 A

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 33 W

Tstg storage temperature -55 175 °C

Tj junction temperature -55 175 °C

Tsld(M) peak soldering temperature - 260 °C

VESD electrostatic discharge voltage MM (JEDEC JESD22-A115) 130 - V

Source-drain diode

IS source current Tmb = 25 °C - 27.4 A

ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 127 A






Symbol Parameter Conditions Min Max Unit

Avalanche ruggedness

EDS(AL)S non-repetitive drain-sourceavalanche energy

VGS = 10 V; Tj(init) = 25 °C; ID = 31 A;Vsup ≤ 30 V; RGS = 50 Ω; unclamped;Fig. 3

- 7.7 mJ

003aak267

0 30 60 90 120 150 1800

10

20

30

40

Tj (°C)

IDID(A)(A)

Fig. 1. Continuous drain current as a function ofmounting base temperature

Tmb (°C)0 20015050 100

03na19

40

80

120

Pder(%)

0

Fig. 2. Normalized total power dissipation as afunction of mounting base temperature

003aak268

10-3 10-2 10-1 1 1010-1

1

10

102

tAL (ms)

IALIAL(A)(A)

(1)(1)

(2)(2)

Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time






003aak269

10-1 1 10 10210-1

1

10

102

103

VDS (V)

IDID(A)(A)

DCDC

100 ms100 ms10 ms10 ms1 ms1 ms

100 us100 us

tp = 10 ustp = 10 us

Limit RDSon = VDS / IDLimit RDSon = VDS / ID

Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

5. Thermal characteristicsTable 5. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistancefrom junction tomounting base

Fig. 5 - 4.32 4.56 K/W

003aak270

10-6 10-5 10-4 10-3 10-2 10-1 110-2

10-1

1

10

tp (s)

Zth(j-mb)Zth(j-mb)(K/W)(K/W)

P

ttpT

tpδ = Tsingle shotsingle shot

δ = 0.5δ = 0.5

0.20.2

0.10.1

0.050.05

0.020.02

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration






6. CharacteristicsTable 6. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics

ID = 13.5 A; VGS = 0 V; Tj(init) = 25 °C;tp ≤ 50 µs

34 - - V

ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V

V(BR)DSS drain-sourcebreakdown voltage

ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V

VGS(th) gate-source thresholdvoltage

ID = 1 mA; VDS = VGS; Tj = 25 °C 1.05 1.62 1.95 V

ΔVGS(th)/ΔT gate-source thresholdvoltage variation withtemperature

- -3.5 - mV/K

VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µAIDSS drain leakage current

VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 100 µA

VGS = 16 V; VDS = 0 V; Tj = 25 °C - - 100 nAIGSS gate leakage current

VGS = -16 V; VDS = 0 V; Tj = 25 °C - - 100 nA

VGS = 4.5 V; ID = 5 A; Tj = 25 °C;Fig. 10

- 20.5 27 mΩ

VGS = 4.5 V; ID = 5 A; Tj = 150 °C;Fig. 10; Fig. 11

- - 43.2 mΩ

VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 10 - 14.7 18.1 mΩ

RDSon drain-source on-stateresistance

VGS = 10 V; ID = 5 A; Tj = 150 °C;Fig. 10; Fig. 11

- - 29 mΩ

RG gate resistance f = 1 MHz 0.68 1.37 2.74 Ω

Dynamic characteristics

ID = 5 A; VDS = 15 V; VGS = 10 V;Fig. 12; Fig. 13

- 9.5 - nC

ID = 5 A; VDS = 15 V; VGS = 4.5 V;Fig. 12; Fig. 13

- 4.6 - nC

QG(tot) total gate charge

ID = 0 A; VDS = 0 V; VGS = 10 V - 8.4 - nC

QGS gate-source charge - 1 - nC

QGS(th) pre-threshold gate-source charge

- 0.3 - nC

QGS(th-pl) post-threshold gate-source charge

- 0.7 - nC

QGD gate-drain charge

ID = 5 A; VDS = 15 V; VGS = 4.5 V;Fig. 12; Fig. 13

- 1.7 - nC

VGS(pl) gate-source plateauvoltage

ID = 5 A; VDS = 15 V; Fig. 12; Fig. 13 - 2.4 - V






Symbol Parameter Conditions Min Typ Max Unit

Ciss input capacitance - 430 - pF

Coss output capacitance - 120 - pF

Crss reverse transfercapacitance

VDS = 15 V; VGS = 0 V; f = 1 MHz;Tj = 25 °C; Fig. 14

- 70 - pF

td(on) turn-on delay time - 6.1 - ns

tr rise time - 7.2 - ns

td(off) turn-off delay time - 10.1 - ns

tf fall time

VDS = 15 V; RL = 3 Ω; VGS = 4.5 V;RG(ext) = 5 Ω

- 5.1 - ns

Qoss output charge VGS = 0 V; VDS = 15 V; f = 1 MHz;Tj = 25 °C

- 2.3 - nC

Source-drain diode

VSD source-drain voltage IS = 5 A; VGS = 0 V; Tj = 25 °C; Fig. 15 - 0.89 1.1 V

trr reverse recovery time - 13.5 - ns

Qr recovered charge

IS = 5 A; dIS/dt = -100 A/µs; VGS = 0 V;VDS = 15 V - 5.1 - nC

ta reverse recovery risetime

- 6.3 - ns

tb reverse recovery falltime

VGS = 0 V; IS = 5 A; dIS/dt = -100 A/µs;VDS = 15 V; Fig. 16

- 7.2 - ns

003aak271

0 0.5 1 1.5 2 2.5 30

10

20

30

40

VDS (V)

IDID(A)(A)

2.2 V2.2 V2.4 V2.4 V

2.6 V2.6 V

2.8 V2.8 V

VGS = 3 VVGS = 3 V

3.5 V3.5 V

4.5 V4.5 V10 V10 V

Fig. 6. Output characteristics; drain current as afunction of drain-source voltage; typical values

003aak272

0 2 4 6 8 10 12 14 160

10

20

30

40

50

VGS (V)

RDSonRDSon

Fig. 7. Drain-source on-state resistance as a functionof gate-source voltage; typical values






003aak273

0 5 10 15 20 25 30 35 400

5

10

15

20

25

ID (A)

gfsgfs(S)(S)

Fig. 8. Forward transconductance as a function ofdrain current; typical values

003aak274

0 0.5 1 1.5 2 2.5 3 3.5 40

10

20

30

40

VGS (V)

IDID(A)(A)

Tj = 25°CTj = 25°C150°C150°C

Fig. 9. Transfer characteristics; drain current as afunction of gate-source voltage; typical values

003aak277

0 5 10 15 20 25 30 35 400

20

40

60

80

ID (A)

RDSONRDSon2.8 V2.8 V 3 V3 V 3.5 V3.5 V

4.5 V4.5 V

VGS = 10 VVGS = 10 V

Fig. 10. Drain-source on-state resistance as a functionof drain current; typical values

003aak278

-60 -30 0 30 60 90 120 150 1800

0.4

0.8

1.2

1.6

2

Tj (°C)

aa

10 V10 V

VGS = 4.5 VVGS = 4.5 V

Fig. 11. Normalized drain-source on-state resistancefactor as a function of junction temperature






003aaa508

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 12. Gate charge waveform definitions

003aak279

0 2 4 6 8 100

2

4

6

8

10

QG (nC)

VGSVGS(V)(V)

15 V15 V

VGS = 8 VVGS = 8 V

24 V24 V

Fig. 13. Gate-source voltage as a function of gatecharge; typical values

003aak280

10-1 1 10 10210

102

103

VDS (V)

CC(pF)(pF)

CissCiss

CossCoss

CrssCrss

Fig. 14. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues

003aak281

0 0.2 0.4 0.6 0.8 1 1.20

10

20

30

40

VSD (V)

ISIS(A)(A)

Tj = 25°CTj = 25°C150°C150°C

Fig. 15. Source current as a function of source-drainvoltage; typical values






003aaf 444

0

t (s )

ID

(A)

IRM

0.25 IRM

trr

ta tb

Fig. 16. Reverse recovery timing definition






7. Package outline

ReferencesOutlineversion

Europeanprojection Issue date

IEC JEDEC JEITA

SOT1210

sot1210_po

11-12-1912-03-12

Unit(1)

mmmaxnommin

0.90 0.10 0.35 0.20 0.30 2.700.65

A

Dimensions

Note1. Plastic or metal protrusions of 0.15 mm per side are not included.

Plastic single ended surface mounted package (LFPAK33); 8 leads SOT1210

A1 b

0.35

b1 c c1 D(1) θD1 E(1) E1 e

0.65

e1 H

3.40 2.452.35 3.40

L

0.25

Lp

0.500.20 0.10

w y

3.20 2.000.80 0.00 0.25 0.10 0.20 2.500.25 0°1.90 3.20 0.13 0.30

8°

0 5 mm2.5

scale

Ae1

e X

θ

w A

mountingbase

E1c1b1

b

AE

L

D1

HD

detail X

C cA1

LpCy

1 4

Fig. 17. Package outline LFPAK33 (SOT1210)






8. Legal information

8.1 Data sheet statusDocumentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

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Product[short] datasheet

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9. Contents1 Product profile ....................................................... 11.1 General description .............................................. 11.2 Features and benefits ...........................................11.3 Applications .......................................................... 11.4 Quick reference data ............................................ 12 Pinning information ...............................................23 Ordering information .............................................24 Limiting values .......................................................25 Thermal characteristics .........................................46 Characteristics .......................................................57 Package outline ................................................... 108 Legal information .................................................118.1 Data sheet status ............................................... 118.2 Definitions ...........................................................118.3 Disclaimers .........................................................118.4 Trademarks ........................................................ 12

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 04 September 2012