product / process change notification pcn-000618 date: …€¦ · semtech corpus christi sa de cv,...

PRODUCT / PROCESS CHANGE NOTIFICATION PCN-000618

Date: Apr 14 2020 P1/2

Semtech Corporation • 200 Flynn Road • Camarillo • Ca • 93012 • Phone +1 (805) 498-2111 Rev 3

Semtech Corporation, 200 Flynn Road, Camarillo CA 93012 Semtech Canada Corporation, 4281 Harvester Road, Burlington, Ontario L7L 5M4 Canada Semtech Irvine, 5141 California Ave., Suite 100, Irvine CA 92617 Semtech Neuchatel Sarl, Route des Gouttes d’Or 40, CH-2000 Neuchatel Switzerland Semtech Bristol - EMEA Limited, Block B, St James Court, Great Park Road, Bristol BS32 4QJ, UK Semtech Corpus Christi SA de CV, Carretera Matamorros Edificio 7, Reynosa, Tamaulipas, Mexico 88780 Semtech Plano, 1101 Resource Drive, Suite 121, Plano TX 75074

Change Details Part Number(s) Affected: GN1157-INE3 GN1157-INTE3Z GN1160-INE3 GN1160-INTE3Z

Customer Part Number(s) Affected: N/A

Description, Purpose and Effect of Change: As part of Semtech SIP’s ongoing Supply Security Program the above products will be able to be packaged and tested at Greatek Taiwan, as well as the current test location at ASEM and KYEC. The Supply Security Program is to ensure, where possible, a minimum of two approved production sites are available for each production stage. This change also increases Semtech SIP’s production capacity to meet the increased demand for production volumes. Note that Greatek is current qualified supplier of package and test services to Semtech, including closely related GN1158 product variant. As of July 10 2020, GN1157 and GN1160 products shipped to customers will may have been tested at any of the qualified production sites. Earlier shipments from Greatek are possible upon customer approval.

Change Classification Major Minor Impact to Form, Fit, Function

Yes No

Impact to Data Sheet Yes No New Revision or Date N/A

Impact to Performance, Characteristics or Reliability: No impact to fit, form, function, quality or reliability.

Implementation Date July 14, 2020 Work Week 28

Last Time Ship (LTS) Of unchanged product

n/a Affecting Lot No. /

Serial No. (SN) n/a

Sample Availability April 26, 2020 Qualification Report

Availability April 7, 2020

Supporting Documents for Change Validation/Attachments: PRODDOC021987: Greatek Final Test Qualification Report for GN1157/60 family GENDOC058678: GN1157/GN1160 Reliability Qualification Report

PRODUCT / PROCESS CHANGE NOTIFICATION PCN-000618

Date: Apr 14 2020 P2/2

Semtech Corporation • 200 Flynn Road • Camarillo • Ca • 93012 • Phone +1 (805) 498-2111 Rev 3

Issuing Authority Semtech Business Unit: Signal Integrity Products

Semtech Contact Info:

Dusanka Hewlett QMS Engineer, Quality Assurance Semtech Canada Corporation 289-856-9272 [email protected]

FOR FURTHER INFORMATION & WORLDWIDE SALES COVERAGE: http://www.semtech.com/contact/index.html#support

GN1157/GN1160 1 of 9 Reliability Qualification Report

GENDOC- 058678 – 3 7 April 2020 Proprietary & Confidential

GN1157/GN1160 Reliability Qualification Report



Revision History

Version ECR/ECO Date Modifications / Changes

0 158762 Oct 2012 New document

1 ECO-010804 Jan 2013 Updated 2000hrs HTOL

2 ECO-017723 Feb 2014 Added Greatek as a second source for packaging

3 ECO-051441 Apr 2020 Updated formatting, including qualif ied supplier document clean w ith current information.

Contents

1 Dev ice Specif ics .............................................................................................................................3

1.1 Manufacturing Summary ................................................................................................................3

1.2 Product Information ........................................................................................................................3

1.3 Process Qualif ication .....................................................................................................................3

1.4 Product Qualif ication Approach .....................................................................................................4

2 Reliability Qualif ication Stresses ...................................................................................................5

2.1 Environmental Tests ......................................................................................................................5

2.2 Electrostatic Discharge and Latch Up Tests .................................................................................7

3 Conclusion ......................................................................................................................................8

4 Reference .......................................................................................................................................9



1 Device Specifics

1.1 Manufacturing Summary

Table 1.: Manufacturing Summary

Semtech Device Codes GN1157, GN1160

Silicon Fab Technology Jazz SiGe120 SBC18HA

Package Assembly ASE-M

Greatek

Package Type 28 QFN, 4x4 mm, 0.4 mm pitch

Bond Wire Copper Wire

Qualified Suppliers

FT vendors ASE-M, KYEC, Greatek

1.2 Product Information

The GN1157 is a multi-rate transceiver IC, w ith Transmit DFB/FP Laser Driver and Receive Limit ing

Amplif ier, designed specif ically for datacom and telecom applications.

The GN1160 is a multi-rate DFB/FP laser driver IC designed specif ically for datacom and telecom

applications.

1.3 Process Qualification

The die is manufactured by Jazz using the SiGe120 SBC18HA process. The Jazz process qualif ication report

has been accepted and is stored in Agile ID#GENDOC-034874. These products are packaged at ASE-M in

28 pin QFN package. The ASE-M package process qualif ication report is in Agile ID#GENDOC-049495. The

internal qualif ication of GN2033 copper w ire ASE-M packaged test vehicle w as selected as a strategic

opportunity to qualify the copper w ire technology. The internal ASE-M copper w ire qualif ication report is in

Agile ID#GENDOC-056784. As a second source Greatek has being fully qualif ied as a supplier of the

GN1157/58 product family.

Specif ic details can be found in the Product Qualif ication Approach on the next page.



1.4 Product Qualification Approach

Die level qualif ication, including HTOL, ESD and latch up, w as performed on the GN1157.

As noted packaging qualif ication has been completed at tw o sources: ASE-M and Greatek. Details below

ASE-M:

The GN2033 test vehicle(w ith copper w ires) contain a die from the same fab process in a larger 5x5 mm 32

QFN package then the GN1157 family, a number of package stresses have been bridged to the GN2033

(copper w ire) qualif ication. Highly Accelerated Stress Test is bridged to the GN2036 w hich uses a die from

the same fab process as the GN1157 family in a larger 5x6 mm 44 QFN package using copper w ires. The

results obtained w ith the GN2033 copper w ires test vehicle and GN2036 are considered representative for

the GN1157 family ASE-M QFN. Temperature cycling and unbiased HAST w as run on the GN1157 due to

the custom leadframe and 7 mil die thickness for the GN1157 (ASE-M).

Greatek:

The package for the GN1157/58 family of products is second-sourced from Greatek. Full package-level

qualif ication on the Greatek package w as completed. Biased HAST w as run on the GN1158 due to the low er

pow er dissipation for that product. GN1158 is from the same fab and back end process, and contains a similar feature set as the GN1157. The package level stresses from GN1157 and GN1158 are considered

representative of the GN1157 product family.

The GN1160 is based on the GN1157, w ith a reduced feature set. Qualif ication of the GN1160 is fully bridged

to the GN1157.

The High Temperature Operating Life Test w as performed at 150ºC. Increasing the temperature at w hich

reliability qualif ication stresses are executed can signif icantly shorten the duration of some stresses. The

amount of acceleration betw een stress temperatures is governed by the failure activation energy of the

relevant failure modes. The JEDEC publication JEP122 provides guidance on activation energies for

thermally accelerated failure modes. These failure modes are typically modeled w ith an

Arrhenius relationship and the corresponding acceleration factor are given by:

Where Ea is the failure activation, k is the Boltzmann constant, T1 is the low er temperature in kelvins and T2

is the higher temperature in kelvins. The majority of failure modes relevant to HTOL on SiGe BiCMOS devices

have activation energies greater than or equal to 0.7 eV. Therefore selecting a failure activation energy of

0.7 eV provides a conservative estimate of the temperature acceleration factor during HTOL. Failure modes

w ith activation energies below 0.7 eV are not relevant or are proven to exceed application requirements. For

example, hot carrier injection (HCI) has an activation energy below 0.7 eV; how ever, data from Jazz already

proves that the HCI lifetime is more than 250% longer than the requirement for this fab process. Other data

has show n that hot-carrier degradation does not have a signif icant impact on AC performance degradation

in SiGe HBTs and that DC degradation is less than 5% for up to 100,000 pow er on hours [1]. Data has shown

that SiGe devices can operate at temperatures from 200 to 300ºC w ithout evidence of device-level reliability

issues [2, 3, 4].

The HTOL running at 150ºC w ill experience an Acceleration Factor of 3.34 in relation to 125ºC. This

acceleration allow ed the HTOL time reduction dow n to 600 hrs.



2 Reliability Qualification Stresses

2.1 Environmental Tests

Table 2.: Environmental Tests

Stress Conditions Duration Qualification

Vehicle

Sample Size Results

High Temperature Operating Life

JESD22-A108

Tj ≥ 125 oC, Vcc ≥ Vccmax

1000 hrs eqv

2000 hrs eqv

GN1157 74 Pass

72* Pass

Temperature Cycling

JESD22-A104

MSL Preconditioning,

-55 oC to +125 oC (Condition B)

1000 cycles GN1157 (ASE-M) 27 Pass

Bridge to GN2033 (Cu w ire test

vehicle) (ASE-M)

240

(80 each from 3 lots)

Pass

GN1157 (Greatek) 135 (45 each from 3 lots)

Pass

Highly Accelerated Stress Test (HAST)

JESD22-A110


130 oC/85% R.H., Vccmax

96 hours Bridge to GN2036 (ASE-M)

231


Pass

Bridge to GN1158 (Greatek)

120 (40 x 3 lots) Pass

Unbiased Highly Accelerated Stress Test

JESD22-A118


130 oC/85% RH

96 hours Bridge to GN2033 (Cu w ire test vehicle)

240


Pass

GN1157 (ASE-M) 27 Pass

Bridged to GN1158 (Greatek)

120 (40 x 3 lots) Pass

GN1157 (Greatek) 134** (45 x 3 lots) Pass

High Temperature Storage

JESD22-A103

150 oC

1000 hours Bridge to GN2033 (Cu w ire test

vehicle)

240


Pass

GN1157 (Greatek) 240 (80 each from three assembly lots)

Pass

*Tw o HTOL devices w ere removed from the sample set for damage that incurred during handling at test.

** One UHAST device removed from the sample set for damage that incurred during handling at test.



Table 2 cont’d

Stress Conditions Duration Qualification

Vehicle

Sample Size Result

Moisture Sensitivity Level

J-STD-020

MSL1, Tmax=260 oC

Bridge to GN2033 (Cu w ire test vehicle) (ASE-M)

480

(160 each from three assembly lots)

Pass

GN1157 (ASE-M) 54 Pass

Bridge to GN2036 (ASE-M)

231


Pass

GN1157 (Greatek) 270


Pass

Bridge to GN1158 (Greatek)

240 (80 each from three assembly lots)

Pass



2.2 Electrostatic Discharge and Latch Up Tests

Table 3.: Electrostatic Discharge and Latch Up Tests

Stress Conditions Qualification Vehicle

Stress Levels

Sample Size/ Level

Results

Human Body Model ESD

JESD22-A114 GN1157 1 kV, 2 kV 3 Pass

Machine Model ESD

JESD22-A115 GN1157 50 V, 100 V 3 Pass

Charged Device Model ESD

JESD22-C101 GN1157 1 kV, 1.5 kV, 2 kV

3 Pass

Latch Up

JESD78

Vcc=3.63 V +/- 100 mA

Level II, Class A

GN1157 25 oC 3 Pass

100 oC 3 Pass



3 Conclusion

Process qualification reports demonstrate that the processes used in the manufacture of the GN1157 and GN1160 are in volume production and are fully qualified by the suppliers and Semtech Corporation. Semtech Corporation considers these process and libraries acceptable for use in the design and manufacture of Semtech products.

The GN1157 and GN1160 products passed reliability tests. No performance degradation was observed during the evaluation. These products are considered suitable for production.



4 Reference

[1] Zhijian Yang; et al; , "Hot carrier reliability of high-speed SiGe HBT’s under accelerated collector-base avalanche bias," Devices, Circuits and Systems, 2008. ICCDCS 2008. 7th International Caribbean Conference on, pp.1-7, 28-30 April 2008 [2] Cressler, J.D.; , "SiGe HBT reliability issues associated with operation in extreme environments," Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on , pp.3-7, 18-20 Jan. 2006 [3] Chen, T.; et al;, "On the high-temperature (to 300°C) characteristics of SiGe HBTs," Electron Devices, IEEE Transactions on , vol.51, no.11, pp. 1825- 1832, Nov. 2004 [4] Rieh, J.-S.; et al; , "Wafer level forward current reliability analysis of 120GHz production SiGe HBTs under accelerated current stress," Reliability Physics Symposium Proceedings, 2002. 40 th Annual pp. 184- 188, 2002

GN1157/60 Greatek Final Test Qualification PRODDOC021987

Greatek Final Test Qualification Report for GN1157/60 family


Revision History

Version Date Modifications / Changes

1.0 April 2020 New Document

Contents

1 Process Changes ......................................................................................................... 3

1.1 Process Change Summary .......................................................................................... 3

1.2 Products Affected ....................................................................................................... 3

2 Qualification Approach ............................................................................................... 4

2.1 Sampling ..................................................................................................................... 4

2.1.1 Procedure ............................................................................................................... 4

2.2 Trial Run ...................................................................................................................... 4

3 Correlation Analysis .................................................................................................... 5

3.1 GRR ............................................................................................................................. 5

3.1.1 Results ................................................................................................................ 5

3.2 Bin Correlation ............................................................................................................ 5

3.2.1 Results .................................................................................................................... 5

4 Conclusion .................................................................................................................. 6


1 Process Changes

1.1 Process Change Summary

The objective is to qualify the Greatek test location for production use of the GN1157/60 family.

The GN1157 and GN1160 products are currently final tested on the same test platform (93K) that will be used at Greatek location.

In order to ensure security of supply for a high volume product, it is desirable to have the test available at more than one test location. Consequently, we qualified both products at Greatek as well.

This report details the correlation analysis and process verification performed to qualify Greatek test facility for testing of above-mentioned family of products.

The tester platforms, hardware, software and test coverage will remain unchanged from the current production locations.

Notes:

Greatek is not a new test location for Semtech product line.

Additionally, closely related variant GN1158 has been tested at Greatek location for years using the exact same test platform/hardware solution.

1.2 Products Affected

GN1157-INE3, GN1157-INTE3Z, GN1160-INE3 and GN1160-INTE3Z.


2 Qualification Approach

2.1 Sampling

Samples of 10 ‘GRR’ plus 70 (20 pass + 50 rejects) ‘bin-to-bin correlation’ GN1157-INE3 devices were used for qualification.

2.1.1 PROCEDURE

1. Ten GN1157-INE3 samples are selected to fill up the available test sites and perform repeatability test (10 x loops).

2. These devices were benchmark tested at current test location.

3. Greatek repeated the above using the same device samples, test sequence and using the same test card (test card already used at Greatek by closely related variant GN1158)

4. Each of the 10 samples in step 2 & 3 above, were tested on all four sites and looped 10 times per site for repeatability.

5. Additionally, 70 devices were used for bin-to-bin comparison.

6. The 70 correlation samples were tested at the Reference Test Location followed by the same correlation devices final tested at the New Test Location at Greatek.

7. The test data is then compared to ensure location-to-location correlation.

2.2 Trial Run

2450 pc were built and final tested at Greatek to verify the performance (pre-production) before shipping the first set of devices to customers.

The results were analyzed and compared to the production material tested on the reference testers.

The following were concluded:

1. Yield is comparable

2. Failure modes are the same and failure rate is comparable


3 Correlation Analysis

Basic statistics consisting of GRR is calculated for each parameter on each test system. A one–to–one comparison is then made for each parameter. In addition, a bin-to-bin correlation is done to ensure the New Test Location reports the same failure mode and reject rate. Explanation is given for tests that do not meet these criteria.

3.1 GRR

GRR analysis is statistical method of systematically comparing repeatability and reproducibility between two measurement systems. The goal of GRR is to demonstrate that the new system will match the reference production measurement system performance on all critical parameters.

3.1.1 RESULTS

The overall performance of the new test system is equivalent to the reference test system.

3.2 Bin Correlation

The Bin from New Test System and Reference Test System is compared for each sample, both the common and unique failures are reviewed and analysed. Bin to Bin correlation is achieved if all samples have the same Bin and failure mode on both test systems. Explanation is given for tests that do not meet these criteria.

3.2.1 RESULTS

There were no bin to bin anomalies.


4 Conclusion

Thus, based on the analysis of the test data collected and as described in this document GN1157/60 family of products is qualified for production testing at the Greatek test location.


Contact Information

Semtech Corporation

200 Flynn Road, Camarillo, CA 93012

Phone: (805) 498-2111, Fax: (805) 498-3804 www.semtech.com