presentation infineon austria - grenoble-lanef.fr · 2017-01-18 restricted copyright © infineon...

Presentation Infineon Austria Dr. Siegfried KRAINER Grenoble 2017-03-22

Infineon at a glance

Financials Market Position

Business Segments Employees

377 620 897 982

FY 13 FY 14 FY 15 FY 16

[EUR m]

Europe

15,176 employees

More than 36,000 employees worldwide (as of Sep. 2016)

Americas

3,691 employees

Asia/Pacific

17,432 employees

34 R&D locations 19 manufacturing locations

Revenue Segment Result Margin

15.2% 15.5% 14.4% 9.8%

3,843 4,320

5,795 6,473

41%

11%

17%

31%

Automotive

(ATV)

Industrial Power

Control (IPC)

Chip Card &

Security (CCS)

Power Management & Multimarket (PMM)

Revenue FY 2016

# 2 # 1

Automotive Power Smart card ICs

# 2

Strategy Analytics, April 2016

IHS Markit, October 2016

IHS Markit, July 2016

2 2017-02-02 Copyright © Infineon Technologies AG 2017. All rights reserved.

36,299 Employees Worldwide (as of 30 September 2016)

9,855

176

Mexico

Americas 3,691 employees

USA

2,042

337

Asia/Pacific 17,432 employees

2,119

10,210

2,004

Europe 15,176 employees

489

3,588

187

66

2,047

1,644

222 335

153

26

Romania

Sweden

Germany

Great Britain

Austria

Portugal

France

Italy Japan

Singapore

India

Malaysia

China

Korea

Indonesia

153

559 Hungary

Taiwan

49

20 Denmark

Philippines

11 Other Europe

7 Australia


Your daily supporter Did you know that…

… in 7 out of the 10 top selling electric cars in 2015 the drivetrain is powered by

Infineon chips?

… in about half of the passports and ID‘s

worldwide is an Infineon security chip?

… in every third smartphone worldwide a silicon

microphone ensures good sound quality?

… in 45 percent of the servers Infineon energy-

saving chips regulate the power conversion?

R&D Graz

♪ ♫

♪ F&E, P Villach

R&D Linz

R&D, P Villach

R&D, P Villach

… more than half of all new automotive radar systems worldwide are

equipped with chips from Infineon?


Our global R&D network

Malacca

Ipoh

Beijing

Morgan Hill

Seoul

Shanghai

Bangalore Torrance

Warstein

Duisburg

Bristol

Augsburg

Neubiberg (Munich)

Padua

Villach

Graz

Regensburg

Dresden

Bucharest

Linz

Warwick

Tewksbury

Karlsruhe

Le Puy Sainte

Réparade

Pavia

Skovlunde

El Segundo

San José

Leominster

Chandler

Singapore

Reigate

Manila

Mesa

Status: 30 September 2016


Infineon Austria; Company Overview

Wien (Sales)

10 EMP

Graz (R&D)

313 EMP

Klagenfurt (IT)

161 EMP international headquarters

Villach (R&D, P, M, IT)

3.044 EMP international headquarters functions

Austrian subsidiaries DICE, Linz IT Services, Klagenfurt KAI, Villach Foreign subsidiaries Infineon Technologies Romania SCS (F&E) Infineon Technologies (Kulim) Sdn Bhd, Malaysia (P)

Linz Vienna Graz Klagenfurt Villach

Fiscal Year 2016 (per 30.09.2016)

Revenue € 1.839,5 Mio. EBIT € 158,5 Mio. Investment € 357,0 Mio. Tangible assets € 133,9 Mio. Intangible assets € 223,1 Mio.

Employees 3.625 R&D Expenditure 22 % in % of Revenue

Linz (R&D)

97 EMP


Innovation Fab Villach

› Competence center for exceptionally thin (up to 40µm) silicon wafers

› Serial production of power semiconductors („Energy saving chips“) in 300-millimeter thinwafer technology

› Manufacturing competencies for MEMS (micro-electromechanical systems), e.g. silicon microphones and tire pressure sensors

› New semiconductor materials e.g. silicon carbide (SiC) and gallium nitride (GaN)

2015: Awarded the most efficient production plant in Austria

1.800 product types

35 technology families

16,3 billion chips (FY 2016)

Wafer diameters: 100, 150, 200, 300 mm

22.000 m² clean room area


Semiconductor technology portfolio

Technology portfolio fits needs of logic and power applications

Digital CMOS: 800nm – 65nmTechnology Nodes (Platform <180nm incl. RF, AMS)

Analog/Mixed Signal: 500nm – 180nm Technology Nodes (CxNA)

eNVM: EEPROM: IMEMR, C9FL, OTP: C5OP (Automotive)

eFlash/EEPROM: 250nm – 65nm CxFL (Chip Card), CxFLA, CxFLN (Automotive)

HV-CMOS: 130nm, C11HV/HN

Analog Bipolar: DOPL, Ax, BIPEP, B4CD, HED

Analog BiCMOS: B6CA, B6CA-CT, B7CA, SPT170

HV-CMOS-SOI, Levelshift(SOI,JI)

Smart Power: 1200-130nm BIP/CMOS/DMOS

SPTx (Automotive, EDP) (BCD)

Smart: CMOS/DMOS, SMARTx, MSMARTx,

SSMARTx, Opto-TRIAC, SPS

Magnetic: BxCAS, C9FLRN_GMR

Opto: OP-DI, OP-TR, OP-C9N, µ-modules

C11TOF

DMOS: 12-500V Planar and Trench

MOSFET (OptiMOS™, StrongIRFET™)

HV-DMOS: Superjunction MOSFET

(CoolMOS™)

IGBT: Planar & Trench 500-6500V,

rev. cond., fast recov. diodes

SiC/GaN: Diode, JFET / power switches

Pressure: BxCSP, TIREPx

Silicon-Microphones: DSOUND

adopted for automotive, industrial and for high reliability requirements

Power/Analog incl. Green Robust

MEMS/Sensors

CMOS

RF/Bipolar

RF BiCMOS: 25GHz – 100GHz: B6HFC, B9COPT, B10C

Bipolar IC: 2GHz...200GHz RF-Bipolar: BxHF SiGe: B7HFM, B7/B9HF_SLC, B7HF200,

HiPAC: Al/Cu Integrated Passives B11HFC

P7Mxx, P7Dxx, P8Mxx RF Switches: C7NP, C11NP

Bipolar/Discretes/MMIC:

RF-Transistoren NF-TR; BxHF(D/M) SiGe: B7HFD/M, B7HF_SD

Leistungsverst.: LDMOS, LDxM, LDxIC, LD9AB RFMOS: HFM

Dioden: NF-DI, Tuner: DxT, Schottky: DxS PIN: DxP


Comparison of a MEMS based Ion trap and „industrial“ MEMS Sensors

› Infineon is a world leading company for manufacturing of integrated MEMS products.

– Silicon Microphone, Integrated pressure sensors, Gas sensors, …

› Infineon has the competency to produce complex structures with a very high repeatability

– Semiconductor manufacturing technology from Research Institutes is nowadays far from state-of-the-art opportunities of industrial players Alliances in US

– Verification of physical effects is more reliable if the technology has industrial quality and repeatability

– Many structures which are standard at Infineon like Trench capacitors or TSV (Through Silicon Vias) are part of other quantum computing projects.

9 2017-01-18 restricted Copyright © Infineon Technologies AG 2016. All rights reserved.

Intels revolutionary Finfet vs Infineon ;-)

2017-01-18 restricted Copyright © Infineon Technologies AG 2016. All rights reserved.

2012: “For the first time since the invention of

silicon transistors over 50 years ago, transistors

using a three-dimensional structure will be

put into high-volume manufacturing. Intel will

introduce a revolutionary 3-D transistor”

Infineon Transistor (~2000)

Infineon is a strong player for integration of complex

structures with deep understanding of physical

effects and field distributions

Examples for initiated projects in Quantum engineering: Master Thesis and PostDoc

› Project 1: On-chip filters for surface ion traps

– To be useful for quantum information processing, trapped ions must be very well isolated from external noise sources which could disturb their quantum state. To exclude electronic noise on the electrodes, filters must be placed very close to the trap

– ideally on the trap chip itself. This project involves the design of a suitable filter circuit, fabricating the components on the same chip as a microfabricated ion trap, and then testing the filters’ performance

› Project 2: On-chip radio-frequency electronics for surface ion traps

– The ion traps most often used for quantum information processing require radio-frequency (RF) voltages to confine the ions. Traditional resonators for generating such voltages can be tens of centimeters long, and situated tens of centimeters away from the trap. To make the system scalable the RF drive must be miniaturized to that it can be fabricated on the chip, directly next to the trap. This project involves the design of a suitable RF drive circuit, fabricating the components on the same chip as a microfabricated ion trap, and then testing the drive circuit’s performance.

› PostDoc from working on High Efficiency Wireless charging:

– Quantum Computing: “The re-fields are in the 1-300 MHz range with amplitudes of hundreds of volt”

– HF-Wireless energy transfer: R&D work on 7 MHz resonant wireless engery transfer. Publications for high frequency wireless charging are reporting high efficiencies up to 300 MHz.


Elementary particle strip sensor from Infineon for world largest silicon tracking detector (CERN)


Summary

› Many success stories of Infineon are related to complex manufacturing technologies, not to electronic IC-Design.

– Superjunction power devices, MEMS Sensors, Wide bandgap semiconductors, Smart power technologies

› The high manufacturing quality of Infineon can speed up the development of quantum computing

– Separation of physical effects and manufacturing artefacts

– Infineon sold more than 3 billion integrated sensors in the last 10 years, failure rate < 0,01 ppm

› Competencies for quantum computers and Infineon R&D projects have strong overlap

– MEMS technology and HF-power electronics


In the end … Villach https://www.infineon.com/cms/en/applications/consumer/multicopters/

24.03.2017 Copyright © Infineon Technologies 2011. All rights reserved.

https://www.infineon.com/cms/en/applications/consumer/multicopters/

https://www.infineon.com/cms/en/applications/consumer/multicopters/

presentation infineon austria - grenoble-lanef.fr · 2017-01-18 restricted copyright © infineon...

Documents